JP2002324680A - 発光装置 - Google Patents
発光装置Info
- Publication number
- JP2002324680A JP2002324680A JP2001395213A JP2001395213A JP2002324680A JP 2002324680 A JP2002324680 A JP 2002324680A JP 2001395213 A JP2001395213 A JP 2001395213A JP 2001395213 A JP2001395213 A JP 2001395213A JP 2002324680 A JP2002324680 A JP 2002324680A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- emitting device
- organic compound
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 11
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- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 10
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- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 8
- 150000004696 coordination complex Chemical class 0.000 description 8
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- ZVFQEOPUXVPSLB-UHFFFAOYSA-N 3-(4-tert-butylphenyl)-4-phenyl-5-(4-phenylphenyl)-1,2,4-triazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C(N1C=2C=CC=CC=2)=NN=C1C1=CC=C(C=2C=CC=CC=2)C=C1 ZVFQEOPUXVPSLB-UHFFFAOYSA-N 0.000 description 7
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- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 7
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- 229910052739 hydrogen Inorganic materials 0.000 description 7
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- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 7
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
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- 239000011701 zinc Substances 0.000 description 6
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical group C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 5
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- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
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- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical class C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 4
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
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- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 4
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- FQJQNLKWTRGIEB-UHFFFAOYSA-N 2-(4-tert-butylphenyl)-5-[3-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl]-1,3,4-oxadiazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=C(C=CC=2)C=2OC(=NN=2)C=2C=CC(=CC=2)C(C)(C)C)O1 FQJQNLKWTRGIEB-UHFFFAOYSA-N 0.000 description 3
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- IYZMXHQDXZKNCY-UHFFFAOYSA-N 1-n,1-n-diphenyl-4-n,4-n-bis[4-(n-phenylanilino)phenyl]benzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 IYZMXHQDXZKNCY-UHFFFAOYSA-N 0.000 description 2
- SNTWKPAKVQFCCF-UHFFFAOYSA-N 2,3-dihydro-1h-triazole Chemical compound N1NC=CN1 SNTWKPAKVQFCCF-UHFFFAOYSA-N 0.000 description 2
- UOCMXZLNHQBBOS-UHFFFAOYSA-N 2-(1,3-benzoxazol-2-yl)phenol zinc Chemical compound [Zn].Oc1ccccc1-c1nc2ccccc2o1.Oc1ccccc1-c1nc2ccccc2o1 UOCMXZLNHQBBOS-UHFFFAOYSA-N 0.000 description 2
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- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 1
- VFMUXPQZKOKPOF-UHFFFAOYSA-N 2,3,7,8,12,13,17,18-octaethyl-21,23-dihydroporphyrin platinum Chemical compound [Pt].CCc1c(CC)c2cc3[nH]c(cc4nc(cc5[nH]c(cc1n2)c(CC)c5CC)c(CC)c4CC)c(CC)c3CC VFMUXPQZKOKPOF-UHFFFAOYSA-N 0.000 description 1
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- YLYPIBBGWLKELC-RMKNXTFCSA-N 2-[2-[(e)-2-[4-(dimethylamino)phenyl]ethenyl]-6-methylpyran-4-ylidene]propanedinitrile Chemical compound C1=CC(N(C)C)=CC=C1\C=C\C1=CC(=C(C#N)C#N)C=C(C)O1 YLYPIBBGWLKELC-RMKNXTFCSA-N 0.000 description 1
- POXIZPBFFUKMEQ-UHFFFAOYSA-N 2-cyanoethenylideneazanide Chemical group [N-]=C=[C+]C#N POXIZPBFFUKMEQ-UHFFFAOYSA-N 0.000 description 1
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- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 description 1
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- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 1
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- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzo[h]quinoline Chemical group C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 description 1
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- GQVWHWAWLPCBHB-UHFFFAOYSA-L beryllium;benzo[h]quinolin-10-olate Chemical compound [Be+2].C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21.C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21 GQVWHWAWLPCBHB-UHFFFAOYSA-L 0.000 description 1
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- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- XZCJVWCMJYNSQO-UHFFFAOYSA-N butyl pbd Chemical compound C1=CC(C(C)(C)C)=CC=C1C1=NN=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)O1 XZCJVWCMJYNSQO-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
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- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 1
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- 238000006731 degradation reaction Methods 0.000 description 1
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- LNBHUCHAFZUEGJ-UHFFFAOYSA-N europium(3+) Chemical compound [Eu+3] LNBHUCHAFZUEGJ-UHFFFAOYSA-N 0.000 description 1
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- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
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- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical group C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
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- 238000001579 optical reflectometry Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 150000005041 phenanthrolines Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
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- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- JFLKFZNIIQFQBS-FNCQTZNRSA-N trans,trans-1,4-Diphenyl-1,3-butadiene Chemical group C=1C=CC=CC=1\C=C\C=C\C1=CC=CC=C1 JFLKFZNIIQFQBS-FNCQTZNRSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/10—Triplet emission
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001395213A JP2002324680A (ja) | 2000-12-28 | 2001-12-26 | 発光装置 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
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| JP2000-400730 | 2000-12-28 | ||
| JP2000400730 | 2000-12-28 | ||
| JP2001045847 | 2001-02-21 | ||
| JP2001-45847 | 2001-02-21 | ||
| JP2001395213A JP2002324680A (ja) | 2000-12-28 | 2001-12-26 | 発光装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007190445A Division JP2007300137A (ja) | 2000-12-28 | 2007-07-23 | 発光素子、発光装置及び電気器具 |
Publications (2)
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|---|---|
| JP2002324680A true JP2002324680A (ja) | 2002-11-08 |
| JP2002324680A5 JP2002324680A5 (enExample) | 2005-07-28 |
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| JP2007190445A Withdrawn JP2007300137A (ja) | 2000-12-28 | 2007-07-23 | 発光素子、発光装置及び電気器具 |
| JP2010123848A Withdrawn JP2010186758A (ja) | 2000-12-28 | 2010-05-31 | 発光装置の作製方法 |
| JP2012249176A Withdrawn JP2013033762A (ja) | 2000-12-28 | 2012-11-13 | 発光装置 |
| JP2014084216A Expired - Lifetime JP5925239B2 (ja) | 2000-12-28 | 2014-04-16 | 発光素子および発光装置 |
| JP2015206161A Withdrawn JP2016028392A (ja) | 2000-12-28 | 2015-10-20 | 発光装置 |
Family Applications After (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007190445A Withdrawn JP2007300137A (ja) | 2000-12-28 | 2007-07-23 | 発光素子、発光装置及び電気器具 |
| JP2010123848A Withdrawn JP2010186758A (ja) | 2000-12-28 | 2010-05-31 | 発光装置の作製方法 |
| JP2012249176A Withdrawn JP2013033762A (ja) | 2000-12-28 | 2012-11-13 | 発光装置 |
| JP2014084216A Expired - Lifetime JP5925239B2 (ja) | 2000-12-28 | 2014-04-16 | 発光素子および発光装置 |
| JP2015206161A Withdrawn JP2016028392A (ja) | 2000-12-28 | 2015-10-20 | 発光装置 |
Country Status (8)
| Country | Link |
|---|---|
| US (6) | US7342355B2 (enExample) |
| EP (1) | EP1220339A3 (enExample) |
| JP (6) | JP2002324680A (enExample) |
| KR (2) | KR100890163B1 (enExample) |
| CN (2) | CN1268008C (enExample) |
| MY (1) | MY130464A (enExample) |
| SG (1) | SG93298A1 (enExample) |
| TW (1) | TW545080B (enExample) |
Cited By (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003077656A (ja) * | 2001-09-05 | 2003-03-14 | Sony Corp | 有機電界発光素子およびその製造装置 |
| JP2003272870A (ja) * | 2002-03-15 | 2003-09-26 | Denso Corp | 有機ｅｌ素子 |
| JP2004335204A (ja) * | 2003-05-02 | 2004-11-25 | Toyama Univ | 有機電界発光素子の作製方法、有機電界発光素子、及び有機電界発光層 |
| WO2005009088A1 (ja) * | 2003-07-23 | 2005-01-27 | Konica Minolta Holdings, Inc. | 有機エレクトロルミネッセンス素子、照明装置及び表示装置 |
| JP2005038672A (ja) * | 2003-07-18 | 2005-02-10 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス素子、照明装置及び表示装置 |
| WO2005041249A3 (en) * | 2003-10-28 | 2005-07-28 | Semiconductor Energy Lab | Method of manufacturing optical film |
| JP2005276541A (ja) * | 2004-03-24 | 2005-10-06 | Nippon Seiki Co Ltd | 有機ｅｌ素子 |
| JP2005310742A (ja) * | 2004-03-25 | 2005-11-04 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス素子 |
| JP2006074038A (ja) * | 2004-09-03 | 2006-03-16 | Seiko Epson Corp | 有機半導体層を含む電界効果トランジスタ |
| US7126271B2 (en) | 2003-04-17 | 2006-10-24 | Samsung Sdi Co., Ltd. | Organic electroluminescent display device having bi-layer electron injection structure |
| JP2007042314A (ja) * | 2005-08-01 | 2007-02-15 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス素子、表示装置及び照明装置 |
| JP2007096322A (ja) * | 2005-09-28 | 2007-04-12 | Osram Opto Semiconductors Gmbh | 有機りん光発光デバイス |
| JP2007103762A (ja) * | 2005-10-06 | 2007-04-19 | Hitachi Displays Ltd | 有機ｅｌ表示装置 |
| US7229900B2 (en) | 2003-10-28 | 2007-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method of manufacturing thereof, and method of manufacturing base material |
| JP2007525023A (ja) * | 2004-01-13 | 2007-08-30 | イーストマン コダック カンパニー | 有機電場発光デバイスにおける結晶化抑制材料の使用 |
| JP2008053664A (ja) * | 2006-08-28 | 2008-03-06 | Matsushita Electric Works Ltd | 有機発光素子 |
| JP2008078373A (ja) * | 2006-09-21 | 2008-04-03 | Dainippon Printing Co Ltd | 有機エレクトロルミネッセンス素子及びその製造方法 |
| JP2008130687A (ja) * | 2006-11-17 | 2008-06-05 | Matsushita Electric Works Ltd | 有機エレクトロルミネッセンス素子 |
| US7550919B2 (en) | 2003-03-28 | 2009-06-23 | Sanyo Electric Co., Ltd. | Organic electroluminescent device with reduced initial drive voltage and manufacturing method thereof |
| US7645523B2 (en) | 2001-10-31 | 2010-01-12 | Pioneer Corporation | Organic electroluminescence element |
| WO2010018851A1 (ja) | 2008-08-13 | 2010-02-18 | 三菱化学株式会社 | 有機電界発光素子、有機ｅｌ表示装置及び有機ｅｌ照明 |
| US7811680B2 (en) | 2004-10-11 | 2010-10-12 | Samsung Mobile Display Co., Ltd. | Organic EL device and method of manufacturing the same |
| US7990049B2 (en) | 2007-09-03 | 2011-08-02 | Canon Kabushiki Kaisha | Organic electroluminescent device and production method of the device, and display apparatus |
| US8018144B2 (en) | 2008-02-26 | 2011-09-13 | Samsung Mobile Display Co., Ltd. | Organic light emitting diode and method of fabricating the same |
| JP2012028823A (ja) * | 2011-11-09 | 2012-02-09 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス素子 |
| JP2012049085A (ja) * | 2010-08-30 | 2012-03-08 | Nec Lighting Ltd | 有機エレクトロルミネッセンス素子の製造方法、有機エレクトロルミネッセンス素子及び有機エレクトロルミネッセンス照明装置 |
| WO2012039213A1 (ja) * | 2010-09-24 | 2012-03-29 | 株式会社日立製作所 | 有機発光装置及びこれを用いた光源装置 |
| US8174001B2 (en) | 2008-03-03 | 2012-05-08 | Fujifilm Corporation | Organic electroluminescence element |
| JP2012234737A (ja) * | 2011-05-06 | 2012-11-29 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス素子 |
| JP2014007301A (ja) * | 2012-06-25 | 2014-01-16 | Seiko Epson Corp | 発光素子、発光装置、表示装置および電子機器 |
| WO2017134748A1 (ja) * | 2016-02-02 | 2017-08-10 | パイオニア株式会社 | 発光装置 |
| JPWO2016076375A1 (ja) * | 2014-11-11 | 2017-08-17 | 日立化成株式会社 | 有機エレクトロルミネセンス素子及びその製造方法 |
| JP2020102654A (ja) * | 2020-04-06 | 2020-07-02 | パイオニア株式会社 | 発光装置 |
| WO2021171130A1 (ja) * | 2020-02-28 | 2021-09-02 | 株式会社半導体エネルギー研究所 | 発光デバイス、発光装置、電子機器および照明装置 |
Families Citing this family (207)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010104215A (ko) * | 2000-05-12 | 2001-11-24 | 야마자끼 순페이 | 발광장치 제작방법 |
| US6965124B2 (en) * | 2000-12-12 | 2005-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method of fabricating the same |
| SG115435A1 (en) * | 2000-12-28 | 2005-10-28 | Semiconductor Energy Lab | Luminescent device |
| TW545080B (en) * | 2000-12-28 | 2003-08-01 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| TW518909B (en) * | 2001-01-17 | 2003-01-21 | Semiconductor Energy Lab | Luminescent device and method of manufacturing same |
| US20020139303A1 (en) | 2001-02-01 | 2002-10-03 | Shunpei Yamazaki | Deposition apparatus and deposition method |
| SG118110A1 (en) | 2001-02-01 | 2006-01-27 | Semiconductor Energy Lab | Organic light emitting element and display device using the element |
| NZ527947A (en) * | 2001-02-02 | 2005-10-28 | Schering Corp | 3,4-di-substituted cyclobutene-1,2-diones as CXC chemokine receptor antagonists |
| TWI225312B (en) * | 2001-02-08 | 2004-12-11 | Semiconductor Energy Lab | Light emitting device |
| US20030010288A1 (en) * | 2001-02-08 | 2003-01-16 | Shunpei Yamazaki | Film formation apparatus and film formation method |
| JP4663139B2 (ja) | 2001-02-16 | 2011-03-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7432116B2 (en) | 2001-02-21 | 2008-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Method and apparatus for film deposition |
| SG118118A1 (en) * | 2001-02-22 | 2006-01-27 | Semiconductor Energy Lab | Organic light emitting device and display using the same |
| US7199515B2 (en) * | 2001-06-01 | 2007-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Organic light emitting element and light emitting device using the element |
| EP2405694A1 (en) | 2001-06-13 | 2012-01-11 | IPR Licensing Inc. | Base station and system for coordination of wireless maintenance channel power control |
| TW577179B (en) | 2001-10-09 | 2004-02-21 | Semiconductor Energy Lab | Switching element, display device, light emitting device using the switching element, and semiconductor device |
| JP4202012B2 (ja) * | 2001-11-09 | 2008-12-24 | 株式会社半導体エネルギー研究所 | 発光装置及び電流記憶回路 |
| KR100634109B1 (ko) | 2001-12-18 | 2006-10-17 | 세이코 엡슨 가부시키가이샤 | 발광 장치, 그 제조 방법, 전기 광학 장치, 및 전자 기기 |
| US6815723B2 (en) * | 2001-12-28 | 2004-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor |
| KR20020025918A (ko) * | 2002-02-15 | 2002-04-04 | 박병주 | 습식 공정으로 제작된 유기 반도체 디바이스 및 유기전계발광 소자 |
| EP1343206B1 (en) * | 2002-03-07 | 2016-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus, electronic apparatus, illuminating device and method of fabricating the light emitting apparatus |
| JP4046267B2 (ja) * | 2002-03-26 | 2008-02-13 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US7579771B2 (en) | 2002-04-23 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
| US7786496B2 (en) | 2002-04-24 | 2010-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing same |
| JP2003317971A (ja) | 2002-04-26 | 2003-11-07 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
| US6931132B2 (en) * | 2002-05-10 | 2005-08-16 | Harris Corporation | Secure wireless local or metropolitan area network and related methods |
| TWI336905B (en) * | 2002-05-17 | 2011-02-01 | Semiconductor Energy Lab | Evaporation method, evaporation device and method of fabricating light emitting device |
| TWI288443B (en) * | 2002-05-17 | 2007-10-11 | Semiconductor Energy Lab | SiN film, semiconductor device, and the manufacturing method thereof |
| US20040035360A1 (en) * | 2002-05-17 | 2004-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
| US7897979B2 (en) | 2002-06-07 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
| JP4216008B2 (ja) * | 2002-06-27 | 2009-01-28 | 株式会社半導体エネルギー研究所 | 発光装置およびその作製方法、ならびに前記発光装置を有するビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、カーナビゲーション、パーソナルコンピュータ、ｄｖｄプレーヤー、電子遊技機器、または携帯情報端末 |
| JP2004071696A (ja) * | 2002-08-02 | 2004-03-04 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| DE10238054B4 (de) * | 2002-08-20 | 2007-08-09 | Fer Fahrzeugelektrik Gmbh | Elektrolumineszenz-Schild, insbesondere Kraftfahrzeug-Kennzeichenschild |
| US7605023B2 (en) * | 2002-08-29 | 2009-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for a semiconductor device and heat treatment method therefor |
| JP4627961B2 (ja) * | 2002-09-20 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7699482B2 (en) * | 2002-09-25 | 2010-04-20 | Fujifilm Corporation | Light-emitting element |
| FR2845778B1 (fr) * | 2002-10-09 | 2004-12-17 | Saint Gobain | Dispositif electrocommandable du type electroluminescent |
| TWI332326B (en) | 2002-10-17 | 2010-10-21 | Interdigital Tech Corp | Power control for communications systems utilizing high speed shared channels |
| WO2004053816A1 (ja) * | 2002-12-10 | 2004-06-24 | Semiconductor Energy Laboratory Co., Ltd. | 発光装置およびその作製方法 |
| DE10262143B4 (de) * | 2002-12-20 | 2011-01-20 | Ksg Leiterplatten Gmbh | Lichtemittierende Anordnung |
| EP1578885A2 (de) * | 2002-12-23 | 2005-09-28 | Covion Organic Semiconductors GmbH | Organisches elektrolumineszenzelement |
| TWI316827B (en) * | 2003-02-27 | 2009-11-01 | Toyota Jidoshokki Kk | Organic electroluminescent device |
| JP4188846B2 (ja) | 2003-05-15 | 2008-12-03 | 三星エスディアイ株式会社 | 発光抑制素子及びこれに基づいた画像表示装置 |
| US20050023974A1 (en) * | 2003-08-01 | 2005-02-03 | Universal Display Corporation | Protected organic electronic devices and methods for making the same |
| US7511421B2 (en) * | 2003-08-25 | 2009-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Mixed metal and organic electrode for organic device |
| KR101246247B1 (ko) * | 2003-08-29 | 2013-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전계발광소자 및 그것을 구비한 발광장치 |
| TWI372462B (en) * | 2003-10-28 | 2012-09-11 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
| KR20110091797A (ko) | 2003-11-28 | 2011-08-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
| US7045952B2 (en) * | 2004-03-04 | 2006-05-16 | Universal Display Corporation | OLEDs with mixed host emissive layer |
| JP4947909B2 (ja) * | 2004-03-25 | 2012-06-06 | 三洋電機株式会社 | 有機エレクトロルミネッセンス素子 |
| JP4090447B2 (ja) * | 2004-03-29 | 2008-05-28 | 三洋電機株式会社 | 有機エレクトロルミネッセンス素子 |
| JP4393249B2 (ja) * | 2004-03-31 | 2010-01-06 | 株式会社 日立ディスプレイズ | 有機発光素子，画像表示装置、及びその製造方法 |
| US7449830B2 (en) | 2004-08-02 | 2008-11-11 | Lg Display Co., Ltd. | OLEDs having improved luminance stability |
| US7449831B2 (en) * | 2004-08-02 | 2008-11-11 | Lg Display Co., Ltd. | OLEDs having inorganic material containing anode capping layer |
| US7579090B2 (en) * | 2004-09-20 | 2009-08-25 | Eastman Kodak Company | Organic element for electroluminescent devices |
| US7767316B2 (en) * | 2004-09-20 | 2010-08-03 | Global Oled Technology Llc | Organic electroluminescent devices and composition |
| WO2006046678A1 (en) | 2004-10-29 | 2006-05-04 | Semiconductor Energy Laboratory Co., Ltd. | Composite material, light-emittintg element, light-emitting device, and manufacturing method thereof |
| KR101267040B1 (ko) * | 2004-12-06 | 2013-05-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합재료를 사용한 발광소자 및 발광장치, 및 발광소자의 제조방법 |
| JP4989881B2 (ja) * | 2004-12-28 | 2012-08-01 | 富士フイルム株式会社 | 有機電界発光素子 |
| US7075231B1 (en) * | 2005-01-03 | 2006-07-11 | Eastman Kodak Company | Tandem OLEDs having low drive voltage |
| US7419565B2 (en) * | 2005-02-01 | 2008-09-02 | Eastman Kodak Company | Method for encapsulating |
| US20060204784A1 (en) * | 2005-03-10 | 2006-09-14 | Begley William J | Organic light-emitting devices with mixed electron transport materials |
| KR101346907B1 (ko) * | 2005-04-14 | 2014-01-02 | 메르크 파텐트 게엠베하 | 유기 전자 소자용 화합물 |
| US8049208B2 (en) | 2005-04-22 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Organic semiconductor device having composite electrode |
| US8487527B2 (en) * | 2005-05-04 | 2013-07-16 | Lg Display Co., Ltd. | Organic light emitting devices |
| US7777407B2 (en) * | 2005-05-04 | 2010-08-17 | Lg Display Co., Ltd. | Organic light emitting devices comprising a doped triazine electron transport layer |
| US20060265278A1 (en) * | 2005-05-18 | 2006-11-23 | Napster Llc | System and method for censoring randomly generated character strings |
| US7943244B2 (en) * | 2005-05-20 | 2011-05-17 | Lg Display Co., Ltd. | Display device with metal-organic mixed layer anodes |
| US7795806B2 (en) | 2005-05-20 | 2010-09-14 | Lg Display Co., Ltd. | Reduced reflectance display devices containing a thin-layer metal-organic mixed layer (MOML) |
| US7750561B2 (en) * | 2005-05-20 | 2010-07-06 | Lg Display Co., Ltd. | Stacked OLED structure |
| US7728517B2 (en) | 2005-05-20 | 2010-06-01 | Lg Display Co., Ltd. | Intermediate electrodes for stacked OLEDs |
| US7811679B2 (en) * | 2005-05-20 | 2010-10-12 | Lg Display Co., Ltd. | Display devices with light absorbing metal nanoparticle layers |
| KR100806812B1 (ko) * | 2005-07-25 | 2008-02-25 | 엘지.필립스 엘시디 주식회사 | 유기 ｅｌ 소자 및 그 제조방법 |
| KR100672535B1 (ko) | 2005-07-25 | 2007-01-24 | 엘지전자 주식회사 | 유기 ｅｌ 소자 및 그 제조방법 |
| US7563518B2 (en) * | 2005-07-28 | 2009-07-21 | Eastman Kodak Company | Low voltage organic electroluminescent element |
| JP2007073500A (ja) * | 2005-08-11 | 2007-03-22 | Semiconductor Energy Lab Co Ltd | 発光素子、発光装置及び電子機器 |
| JP2007064999A (ja) * | 2005-08-29 | 2007-03-15 | Mitsubishi Electric Corp | 液晶表示装置 |
| TWI264459B (en) * | 2005-10-07 | 2006-10-21 | Au Optronics Corp | Organic light emitting diode and display apparatus including the same |
| JP2007123611A (ja) * | 2005-10-28 | 2007-05-17 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
| KR100828173B1 (ko) * | 2005-11-22 | 2008-05-08 | (주)그라쎌 | 유기 발광 화합물 및 이를 발광재료로 채용하고 있는 표시소자 |
| TW200737109A (en) * | 2006-03-30 | 2007-10-01 | Au Optronics Corp | Display module |
| KR20070101984A (ko) * | 2006-04-13 | 2007-10-18 | 삼성에스디아이 주식회사 | 전하분리층을 구비한 유기 전기발광 소자 |
| US7714145B2 (en) * | 2006-05-15 | 2010-05-11 | Ken-Tsung Wong | 2-2′-disubstituted 9,9′-spirobifluorene-base triaryldiamines and their application |
| KR101384785B1 (ko) | 2006-06-01 | 2014-04-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광소자, 발광장치 및 전자기기 |
| KR20080028212A (ko) * | 2006-09-26 | 2008-03-31 | 삼성에스디아이 주식회사 | 유기발광소자 및 그 제조방법 |
| KR101270169B1 (ko) * | 2006-11-13 | 2013-05-31 | 삼성전자주식회사 | 유기 발광 소자 |
| US9397308B2 (en) | 2006-12-04 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element, light emitting device, and electronic device |
| KR101426717B1 (ko) * | 2006-12-04 | 2014-08-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자, 발광 장치 및 전자 기기 |
| JP2008145840A (ja) * | 2006-12-12 | 2008-06-26 | Fujifilm Corp | 表示装置 |
| KR100805700B1 (ko) * | 2006-12-29 | 2008-02-21 | 삼성에스디아이 주식회사 | 유기 전자 소자 및 그 제조방법 |
| KR101374891B1 (ko) | 2007-02-09 | 2014-03-25 | 삼성디스플레이 주식회사 | 표시장치 |
| KR100874472B1 (ko) * | 2007-02-28 | 2008-12-18 | 에스에프씨 주식회사 | 청색발광화합물 및 이를 이용한 유기전계발광소자 |
| EP1973386B8 (en) * | 2007-03-23 | 2016-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electronic device |
| US20080238300A1 (en) * | 2007-04-02 | 2008-10-02 | Sang Tae Park | Organic electroluminescence device and method for fabricating the same |
| TWI405497B (zh) * | 2007-04-25 | 2013-08-11 | Ritdisplay Corp | 有機發光顯示裝置及其製造方法 |
| JP2009032987A (ja) * | 2007-07-27 | 2009-02-12 | Fujifilm Corp | 有機電界発光素子 |
| JP2009032989A (ja) * | 2007-07-27 | 2009-02-12 | Fujifilm Corp | 有機電界発光素子 |
| US8384283B2 (en) | 2007-09-20 | 2013-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
| US8115382B2 (en) | 2007-09-20 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device, comprising controlled carrier transport |
| TWI479712B (zh) | 2007-10-19 | 2015-04-01 | Semiconductor Energy Lab | 發光裝置 |
| WO2009051248A1 (en) | 2007-10-19 | 2009-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
| US20090218933A1 (en) * | 2008-03-03 | 2009-09-03 | Idemitsu Kosan Co., Ltd | Organic electroluminescent device |
| WO2009116605A1 (en) * | 2008-03-18 | 2009-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device and electronic device |
| WO2009116547A1 (en) | 2008-03-18 | 2009-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device and electronic device |
| WO2009116414A1 (ja) * | 2008-03-19 | 2009-09-24 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンス素子 |
| DE102008023035B4 (de) * | 2008-05-09 | 2016-01-07 | Novaled Ag | Lichtemittierendes organisches Bauelement und Verfahren zum Herstellen |
| WO2010026859A1 (en) * | 2008-09-05 | 2010-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
| KR101441307B1 (ko) * | 2008-10-10 | 2014-09-17 | 삼성전자주식회사 | 전력 소모 절감을 위한 영상 처리 방법 및 그 장치 |
| KR101932823B1 (ko) * | 2008-12-12 | 2018-12-27 | 유니버셜 디스플레이 코포레이션 | 도핑된 정공 수송층을 통한 ｏｌｅｄ 안정성 향상 |
| EP2200407B1 (en) | 2008-12-17 | 2017-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting element, light emitting device, and electronic device |
| CN101752514B (zh) * | 2008-12-17 | 2015-11-25 | 株式会社半导体能源研究所 | 发光元件、照明装置、发光装置以及电子设备 |
| TWI583253B (zh) | 2009-01-21 | 2017-05-11 | 半導體能源研究所股份有限公司 | 發光元件，發光裝置以及電子裝置 |
| JP5229026B2 (ja) * | 2009-03-16 | 2013-07-03 | セイコーエプソン株式会社 | 発光素子、発光装置、表示装置および電子機器 |
| TWI407831B (zh) * | 2009-04-17 | 2013-09-01 | Innolux Corp | 影像顯示系統 |
| JP2011009205A (ja) * | 2009-05-29 | 2011-01-13 | Semiconductor Energy Lab Co Ltd | 発光素子、発光装置及びその作製方法 |
| CN102449800A (zh) * | 2009-05-29 | 2012-05-09 | 株式会社半导体能源研究所 | 发光元件、发光装置、照明装置以及电子设备 |
| US20120086331A1 (en) * | 2009-06-25 | 2012-04-12 | Konica Minolta Holdings, Inc. | White light emitting organic electroluminescent element |
| WO2011033023A1 (en) | 2009-09-18 | 2011-03-24 | Osram Opto Semiconductors Gmbh | Organic electronic device and dopant for doping an organic semiconducting matrix material |
| CN102024908A (zh) * | 2009-09-23 | 2011-04-20 | 乐金显示有限公司 | 有机发光器件及其制造方法 |
| JP2011139044A (ja) | 2009-12-01 | 2011-07-14 | Semiconductor Energy Lab Co Ltd | 発光素子、発光装置、電子機器、および照明装置 |
| JP6014304B2 (ja) * | 2010-01-15 | 2016-10-25 | ユー・ディー・シー アイルランド リミテッド | 有機電界発光素子 |
| JP5833322B2 (ja) * | 2010-03-12 | 2015-12-16 | ユー・ディー・シー アイルランド リミテッド | 有機電界発光素子及びその製造方法 |
| JP5679689B2 (ja) * | 2010-04-08 | 2015-03-04 | 富士フイルム株式会社 | 薄膜の作製方法及び作製装置 |
| JP5595784B2 (ja) * | 2010-04-22 | 2014-09-24 | 富士フイルム株式会社 | 薄膜の作製方法及び作製装置 |
| TWI437911B (zh) * | 2010-08-31 | 2014-05-11 | Nat Univ Tsing Hua | 有機發光二極體及其製造方法 |
| TWI550059B (zh) * | 2011-02-07 | 2016-09-21 | Idemitsu Kosan Co | A double carbazole derivative and an organic electroluminescent element using the same |
| JP5958464B2 (ja) * | 2011-06-28 | 2016-08-02 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子およびその製造方法 |
| WO2013018251A1 (ja) * | 2011-08-03 | 2013-02-07 | パナソニック株式会社 | 有機発光素子 |
| JP5143266B1 (ja) * | 2011-09-30 | 2013-02-13 | 株式会社東芝 | フレキシブルプリント配線板の製造装置および製造方法 |
| JP5779804B2 (ja) * | 2011-10-12 | 2015-09-16 | 日東電工株式会社 | 有機エレクトロルミネッセンス素子の製造方法 |
| WO2013059718A1 (en) * | 2011-10-19 | 2013-04-25 | E. I. Du Pont De Nemours And Company | Organic electronic device for lighting |
| KR20130078466A (ko) * | 2011-12-30 | 2013-07-10 | 삼성디스플레이 주식회사 | 녹색 유기 발광 소자 및 이를 포함하는 평판 표시 장치 |
| KR20210008947A (ko) | 2012-04-20 | 2021-01-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자, 발광 장치, 전자 기기, 및 조명 장치 |
| KR101950836B1 (ko) * | 2012-05-22 | 2019-02-22 | 엘지디스플레이 주식회사 | 유기 발광 소자 및 그의 제조 방법 |
| DE102012209523A1 (de) | 2012-06-06 | 2013-12-12 | Osram Opto Semiconductors Gmbh | Hauptgruppenmetallkomplexe als p-Dotanden für organische elektronische Matrixmaterialien |
| TWI622198B (zh) * | 2012-07-18 | 2018-04-21 | 樂金顯示科技股份有限公司 | 有機發光裝置 |
| KR101941453B1 (ko) * | 2012-09-28 | 2019-01-23 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
| JP2014086497A (ja) * | 2012-10-22 | 2014-05-12 | Toshiba Corp | 有機電界発光素子及び照明装置 |
| KR102046157B1 (ko) * | 2012-12-21 | 2019-12-03 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| US9246133B2 (en) | 2013-04-12 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting module, light-emitting panel, and light-emitting device |
| KR102020484B1 (ko) * | 2013-05-30 | 2019-09-11 | 삼성디스플레이 주식회사 | 유기 발광 장치 |
| DE102013106949A1 (de) * | 2013-07-02 | 2015-01-08 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement, organische funktionelle Schicht und Verfahren zur Herstellung eines optoelektronischen Bauelements |
| KR101566434B1 (ko) * | 2013-07-15 | 2015-11-06 | 삼성디스플레이 주식회사 | 유기 발광 장치 |
| CN103730585B (zh) * | 2013-12-26 | 2016-08-31 | 京东方科技集团股份有限公司 | 一种有机发光器件及其制作方法、显示装置 |
| JP6515537B2 (ja) * | 2014-04-08 | 2019-05-22 | セイコーエプソン株式会社 | 有機ｅｌ装置の製造方法、有機ｅｌ装置、電子機器 |
| KR20150126526A (ko) * | 2014-05-02 | 2015-11-12 | 삼성디스플레이 주식회사 | 유기 발광 소자 |
| EP2978040B1 (en) * | 2014-07-22 | 2017-12-27 | Samsung Display Co., Ltd. | Organic light-emitting device |
| JP6302786B2 (ja) * | 2014-08-01 | 2018-03-28 | シャープ株式会社 | 蒸着装置、蒸着方法、及び有機ｅｌ素子の製造方法 |
| KR102231490B1 (ko) * | 2014-09-02 | 2021-03-25 | 삼성디스플레이 주식회사 | 유기 전계 발광 소자 |
| CN104241540A (zh) * | 2014-09-04 | 2014-12-24 | 京东方科技集团股份有限公司 | 一种有机电致发光显示器件、其制作方法及显示装置 |
| DE102014114224A1 (de) | 2014-09-30 | 2016-03-31 | Osram Oled Gmbh | Organisches elektronisches Bauteil, Verwendung eines Zinkkomplexes als p-Dotierungsmittel für organische elektronische Matrixmaterialien |
| DE202014106226U1 (de) | 2014-09-30 | 2015-10-28 | Osram Oled Gmbh | Organisches elektronisches Bauteil |
| KR102376968B1 (ko) | 2014-11-17 | 2022-03-22 | 삼성디스플레이 주식회사 | 유기 발광 소자 |
| JP2016197697A (ja) * | 2015-04-06 | 2016-11-24 | 株式会社ジャパンディスプレイ | 表示装置、及び、表示装置の製造方法 |
| US11818949B2 (en) * | 2015-04-06 | 2023-11-14 | Universal Display Corporation | Organic electroluminescent materials and devices |
| US11495749B2 (en) * | 2015-04-06 | 2022-11-08 | Universal Display Corporation | Organic electroluminescent materials and devices |
| US20160293854A1 (en) | 2015-04-06 | 2016-10-06 | Universal Display Corporation | Organic Electroluminescent Materials and Devices |
| CN105140413B (zh) * | 2015-09-11 | 2018-09-25 | 上海天马有机发光显示技术有限公司 | 显示面板、有机发光器件及其制备方法 |
| KR102500272B1 (ko) | 2015-09-16 | 2023-02-16 | 삼성디스플레이 주식회사 | 화합물 및 이를 포함하는 유기 발광 소자 |
| KR102494453B1 (ko) * | 2015-10-05 | 2023-02-02 | 삼성디스플레이 주식회사 | 유기 전계 발광 소자 및 이를 포함하는 표시 장치 |
| TWI624094B (zh) | 2015-11-30 | 2018-05-11 | Ｌｇ顯示器股份有限公司 | 有機發光二極體及包含該有機發光二極體的有機發光二極體顯示裝置 |
| WO2017099490A1 (ko) * | 2015-12-08 | 2017-06-15 | 희성소재(주) | 헤테로고리 화합물 및 이를 이용한 유기 발광 소자 |
| CN105514291A (zh) * | 2015-12-31 | 2016-04-20 | 固安翌光科技有限公司 | 一种有机电致发光器件 |
| KR101928934B1 (ko) * | 2016-02-23 | 2018-12-13 | 주식회사 엘지화학 | 헤테로고리 화합물 및 이를 포함하는 유기 발광 소자 |
| WO2017204556A1 (ko) * | 2016-05-26 | 2017-11-30 | 덕산네오룩스 주식회사 | 유기전기소자용 화합물, 이를 이용한 유기전기소자 및 그 전자 장치 |
| KR102018682B1 (ko) * | 2016-05-26 | 2019-09-04 | 덕산네오룩스 주식회사 | 유기전기소자용 화합물, 이를 이용한 유기전기소자 및 그 전자 장치 |
| KR101872961B1 (ko) * | 2016-05-27 | 2018-06-29 | 엘지디스플레이 주식회사 | 유기 화합물과 이를 이용한 발광다이오드 및 유기발광다이오드 표시장치 |
| KR102616023B1 (ko) * | 2016-06-30 | 2023-12-22 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 이를 포함하는 표시 장치 |
| EP3459956B1 (en) * | 2016-07-01 | 2021-09-01 | LG Chem, Ltd. | Compound and organic electronic element comprising same |
| US12317744B2 (en) * | 2016-07-07 | 2025-05-27 | Hodogaya Chemical Co., Ltd. | Compound having a fused-azole ring structure and organic electroluminescent element |
| KR102817119B1 (ko) * | 2017-01-19 | 2025-06-09 | 삼성디스플레이 주식회사 | 유기 전계 발광 소자 |
| US12089486B2 (en) * | 2017-02-08 | 2024-09-10 | Universal Display Corporation | Organic electroluminescent materials and devices |
| KR102362185B1 (ko) * | 2017-06-21 | 2022-02-11 | 삼성디스플레이 주식회사 | 발광 소자 및 이를 포함하는 표시 장치 |
| US20190198772A1 (en) | 2017-06-22 | 2019-06-27 | Samsung Sdi Co., Ltd. | Compound for organic optoelectronic device, composition for organic optoelectronic device and organic optoelectronic device and display deivce |
| KR101947747B1 (ko) | 2018-05-04 | 2019-02-13 | 삼성에스디아이 주식회사 | 유기 광전자 소자용 화합물, 유기 광전자 소자용 조성물, 유기 광전자 소자 및 표시 장치 |
| KR102008897B1 (ko) * | 2017-06-22 | 2019-10-23 | 삼성에스디아이 주식회사 | 유기 광전자 소자 및 표시 장치 |
| KR102504132B1 (ko) * | 2017-08-21 | 2023-02-28 | 삼성디스플레이 주식회사 | 유기금속 화합물, 이를 포함한 유기 발광 소자 및 상기 유기 발광 소자를 포함한 발광 장치 |
| CN109427939B (zh) * | 2017-08-24 | 2021-04-13 | Tcl科技集团股份有限公司 | 一种qled器件及其制备方法 |
| CN107749442A (zh) * | 2017-10-16 | 2018-03-02 | 京东方科技集团股份有限公司 | Oled器件及其制备方法、显示装置 |
| CN109686848B (zh) * | 2017-10-19 | 2022-01-28 | 佳能株式会社 | 包括多个有机电致发光元件的发光器件 |
| KR102661471B1 (ko) * | 2018-04-27 | 2024-04-29 | 삼성디스플레이 주식회사 | 유기금속 화합물 및 이를 포함한 유기 발광 소자 |
| CN112105613B (zh) * | 2018-07-09 | 2023-12-01 | 株式会社Lg化学 | 化合物和包含其的有机发光器件 |
| EP3617210A1 (en) * | 2018-08-31 | 2020-03-04 | Idemitsu Kosan Co., Ltd. | Polycyclic compound, and an organic electroluminescence device comprising the polycyclic compound |
| KR102704439B1 (ko) | 2018-10-04 | 2024-09-09 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 이를 포함하는 표시 장치 |
| US11834459B2 (en) | 2018-12-12 | 2023-12-05 | Universal Display Corporation | Host materials for electroluminescent devices |
| KR102772128B1 (ko) * | 2018-12-13 | 2025-02-21 | 엘지디스플레이 주식회사 | 지연형광 화합물, 이를 포함하는 유기발광다이오드 및 유기발광표시장치 |
| KR102725259B1 (ko) * | 2018-12-17 | 2024-11-04 | 삼성디스플레이 주식회사 | 유기금속 화합물 및 이를 포함한 유기 발광 소자 |
| CN109768177B (zh) * | 2019-01-10 | 2021-04-27 | 云谷（固安）科技有限公司 | 一种有机发光显示面板及其制作方法 |
| EP3693352A1 (en) * | 2019-02-06 | 2020-08-12 | Novaled GmbH | Compound and an organic semiconducting layer, an organic electronic device and a display or lighting device comprising the same |
| KR20220002356A (ko) * | 2019-04-26 | 2022-01-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 디바이스, 발광 장치, 전자 기기, 및 조명 장치 |
| KR102729204B1 (ko) * | 2019-05-14 | 2024-11-12 | 덕산네오룩스 주식회사 | 유기전기 소자용 화합물을 포함하는 유기전기소자 및 그 전자 장치 |
| KR102796254B1 (ko) * | 2019-07-30 | 2025-04-17 | 삼성디스플레이 주식회사 | 유기금속 화합물 및 이를 포함한 유기 발광 소자 |
| TW202114987A (zh) * | 2019-09-30 | 2021-04-16 | 日商日鐵化學材料股份有限公司 | 有機電場發光元件及其製造方法 |
| KR102511552B1 (ko) * | 2019-11-25 | 2023-03-21 | 엘티소재주식회사 | 화합물 및 이를 포함하는 유기 발광 소자 |
| KR102857112B1 (ko) * | 2019-12-12 | 2025-09-09 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 이를 포함하는 장치 |
| KR102748936B1 (ko) * | 2019-12-27 | 2025-01-03 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 이를 포함한 장치 |
| KR102825751B1 (ko) * | 2020-01-13 | 2025-06-26 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
| WO2021147059A1 (zh) * | 2020-01-23 | 2021-07-29 | 京东方科技集团股份有限公司 | 显示面板及其制作方法和显示装置 |
| KR20210098332A (ko) * | 2020-01-31 | 2021-08-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 디바이스, 발광 장치, 전자 기기, 및 조명 장치 |
| KR102756320B1 (ko) * | 2020-04-01 | 2025-01-20 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| JP2021163900A (ja) * | 2020-04-01 | 2021-10-11 | 株式会社ジャパンディスプレイ | 発光素子および表示装置 |
| WO2022082646A1 (zh) * | 2020-10-22 | 2022-04-28 | 京东方科技集团股份有限公司 | 发光器件、发光基板和发光装置 |
| KR102849004B1 (ko) * | 2020-12-14 | 2025-08-21 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
| CN112701239B (zh) * | 2021-01-19 | 2022-11-01 | 京东方科技集团股份有限公司 | 一种有机电致发光器件及其制备方法 |
| JP2023050726A (ja) * | 2021-09-30 | 2023-04-11 | 出光興産株式会社 | 化合物、有機エレクトロルミネッセンス素子用材料、有機エレクトロルミネッセンス素子、及び電子機器 |
| CN113999215A (zh) * | 2021-11-26 | 2022-02-01 | 武汉天马微电子有限公司 | 一种有机化合物及其应用 |
| KR102507747B1 (ko) * | 2021-12-01 | 2023-03-13 | 삼성디스플레이 주식회사 | 발광 소자 및 발광 소자용 아민 화합물 |
Family Cites Families (116)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3654525A (en) | 1965-10-23 | 1972-04-04 | Donald Leonard Maricle | Electrochemiluminescent device including one of naphthacene, perylene and 5, 6, 11, 12-tetraphenyl-naphthacene in aprotic solvent |
| EP0429536A4 (en) | 1988-08-19 | 1993-12-15 | Regents Of The University Of Minnesota | Preparation of superconductive ceramic oxides using ozone |
| JP2773297B2 (ja) | 1989-09-28 | 1998-07-09 | 日本電気株式会社 | 有機薄膜ｅｌ素子 |
| US5017863A (en) | 1989-10-20 | 1991-05-21 | Digital Equipment Corporation | Electro-emissive laser stimulated test |
| US5170990A (en) | 1989-12-01 | 1992-12-15 | Canon Kabushiki Kaisha | Vacuum valve and a vacuum treating apparatus in which said vacuum valve is used |
| JPH03190088A (ja) | 1989-12-20 | 1991-08-20 | Sanyo Electric Co Ltd | 有機ｅｌ素子 |
| JP3069139B2 (ja) | 1990-03-16 | 2000-07-24 | 旭化成工業株式会社 | 分散型電界発光素子 |
| JP2926845B2 (ja) | 1990-03-23 | 1999-07-28 | 日本電気株式会社 | 有機薄膜ｅｌ素子 |
| US5271089A (en) | 1990-11-02 | 1993-12-14 | Nec Corporation | Speech parameter encoding method capable of transmitting a spectrum parameter at a reduced number of bits |
| JP3016896B2 (ja) * | 1991-04-08 | 2000-03-06 | パイオニア株式会社 | 有機エレクトロルミネッセンス素子 |
| JPH04357694A (ja) | 1991-06-03 | 1992-12-10 | Denki Kagaku Kogyo Kk | 有機薄膜ｅｌ素子 |
| JPH05182762A (ja) | 1991-12-27 | 1993-07-23 | Fuji Electric Co Ltd | 有機薄膜発光素子 |
| JP3332491B2 (ja) * | 1993-08-27 | 2002-10-07 | 三洋電機株式会社 | 有機ｅｌ素子 |
| JPH07106066A (ja) * | 1993-09-30 | 1995-04-21 | Sanyo Electric Co Ltd | 有機電界発光素子 |
| JPH07278800A (ja) | 1994-04-06 | 1995-10-24 | Vacuum Metallurgical Co Ltd | 被膜形成装置及びその被膜形成方法 |
| US5513499A (en) | 1994-04-08 | 1996-05-07 | Ebara Technologies Incorporated | Method and apparatus for cryopump regeneration using turbomolecular pump |
| JP3249297B2 (ja) | 1994-07-14 | 2002-01-21 | 三洋電機株式会社 | 有機電界発光素子 |
| US5486406A (en) | 1994-11-07 | 1996-01-23 | Motorola | Green-emitting organometallic complexes for use in light emitting devices |
| JP3505257B2 (ja) | 1995-02-24 | 2004-03-08 | 三洋電機株式会社 | 有機エレクトロルミネッセンス素子 |
| JP3449020B2 (ja) * | 1995-03-20 | 2003-09-22 | 松下電器産業株式会社 | 電界発光素子 |
| JP3529543B2 (ja) * | 1995-04-27 | 2004-05-24 | パイオニア株式会社 | 有機エレクトロルミネッセンス素子 |
| US5719467A (en) | 1995-07-27 | 1998-02-17 | Hewlett-Packard Company | Organic electroluminescent device |
| JP3831968B2 (ja) * | 1996-02-23 | 2006-10-11 | ソニー株式会社 | 光学的素子の製造方法 |
| EP0835597B1 (en) | 1996-04-25 | 2003-02-19 | Koninklijke Philips Electronics N.V. | Organic electroluminescent device |
| JP4030608B2 (ja) * | 1996-05-01 | 2008-01-09 | 三菱化学株式会社 | 有機電界発光素子及びその製造方法 |
| WO1998008360A1 (en) | 1996-08-19 | 1998-02-26 | Tdk Corporation | Organic electroluminescent device |
| DE19638770A1 (de) | 1996-09-21 | 1998-03-26 | Philips Patentverwaltung | Organisches elektrolumineszentes Bauelement mit Exciplex |
| JPH10162955A (ja) * | 1996-11-28 | 1998-06-19 | Seiko Precision Kk | 有機ｅｌ素子の製造方法 |
| JPH10233288A (ja) | 1996-12-20 | 1998-09-02 | Tdk Corp | 有機ｅｌ素子 |
| US5817431A (en) | 1996-12-23 | 1998-10-06 | Motorola, Inc. | Electron injecting materials for organic electroluminescent devices and devices using same |
| US5895932A (en) | 1997-01-24 | 1999-04-20 | International Business Machines Corporation | Hybrid organic-inorganic semiconductor light emitting diodes |
| US5989737A (en) | 1997-02-27 | 1999-11-23 | Xerox Corporation | Organic electroluminescent devices |
| JP3641342B2 (ja) | 1997-03-07 | 2005-04-20 | Ｔｄｋ株式会社 | 半導体装置及び有機ｅｌディスプレイ装置 |
| US5925472A (en) | 1997-03-31 | 1999-07-20 | Xerox Corporation | Electroluminescent devices |
| US6121727A (en) | 1997-04-04 | 2000-09-19 | Mitsubishi Chemical Corporation | Organic electroluminescent device |
| US5925980A (en) * | 1997-05-01 | 1999-07-20 | Motorola, Inc. | Organic electroluminescent device with graded region |
| US6130001A (en) * | 1997-07-15 | 2000-10-10 | Motorola, Inc. | Organic electroluminescent device with continuous organic medium |
| JPH1185059A (ja) | 1997-09-05 | 1999-03-30 | Casio Comput Co Ltd | 表示素子、表示素子の製造方法及び表示素子の駆動方法 |
| US5853905A (en) | 1997-09-08 | 1998-12-29 | Motorola, Inc. | Efficient single layer electroluminescent device |
| JP3777812B2 (ja) * | 1997-09-29 | 2006-05-24 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネセンス素子 |
| EP1536496A1 (en) * | 1997-10-09 | 2005-06-01 | The Trustees Of Princeton University | Organic light emitting device |
| US6451455B1 (en) | 1998-04-01 | 2002-09-17 | The Trustees Of Princeton University | Metal complexes bearing both electron transporting and hole transporting moieties |
| US6413656B1 (en) | 1998-09-14 | 2002-07-02 | The University Of Southern California | Reduced symmetry porphyrin molecules for producing enhanced luminosity from phosphorescent organic light emitting devices |
| US6030715A (en) | 1997-10-09 | 2000-02-29 | The University Of Southern California | Azlactone-related dopants in the emissive layer of an OLED |
| US6420031B1 (en) | 1997-11-03 | 2002-07-16 | The Trustees Of Princeton University | Highly transparent non-metallic cathodes |
| US6469437B1 (en) | 1997-11-03 | 2002-10-22 | The Trustees Of Princeton University | Highly transparent organic light emitting device employing a non-metallic cathode |
| US6150043A (en) | 1998-04-10 | 2000-11-21 | The Trustees Of Princeton University | OLEDs containing thermally stable glassy organic hole transporting materials |
| US6303238B1 (en) | 1997-12-01 | 2001-10-16 | The Trustees Of Princeton University | OLEDs doped with phosphorescent compounds |
| US6368730B1 (en) | 1997-10-13 | 2002-04-09 | Matsushita Electric Industrial Co., Ltd. | Electroluminescent device |
| US6248458B1 (en) | 1997-11-17 | 2001-06-19 | Lg Electronics Inc. | Organic electroluminescent device with improved long-term stability |
| CN1155115C (zh) | 1997-11-17 | 2004-06-23 | Lg电子株式会社 | 有机场致发光器件 |
| JPH11251067A (ja) | 1998-03-02 | 1999-09-17 | Junji Kido | 有機エレクトロルミネッセント素子 |
| JPH11256148A (ja) * | 1998-03-12 | 1999-09-21 | Oki Electric Ind Co Ltd | 発光用材料およびこれを用いた有機ｅｌ素子 |
| US6387544B1 (en) | 1998-04-10 | 2002-05-14 | The Trustees Of Princeton University | OLEDS containing thermally stable glassy organic hole transporting materials |
| US6284050B1 (en) | 1998-05-18 | 2001-09-04 | Novellus Systems, Inc. | UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition |
| US6275649B1 (en) | 1998-06-01 | 2001-08-14 | Nihon Shinku Gijutsu Kabushiki Kaisha | Evaporation apparatus |
| US6606140B1 (en) * | 1998-07-31 | 2003-08-12 | Fuji Photo Film Co., Ltd. | Optical compensatory sheet comprising substrate, orientation layer and optically anisotropic layer |
| EP0982783A3 (en) | 1998-08-21 | 2000-11-08 | TDK Corporation | Organic electroluminescent device and making method |
| JP2000133447A (ja) * | 1998-08-21 | 2000-05-12 | Tdk Corp | 有機ｅｌ素子およびその製造方法 |
| US6558817B1 (en) * | 1998-09-09 | 2003-05-06 | Minolta Co., Ltd. | Organic electroluminescent element |
| US6830828B2 (en) | 1998-09-14 | 2004-12-14 | The Trustees Of Princeton University | Organometallic complexes as phosphorescent emitters in organic LEDs |
| US6097147A (en) * | 1998-09-14 | 2000-08-01 | The Trustees Of Princeton University | Structure for high efficiency electroluminescent device |
| JP2000100558A (ja) * | 1998-09-18 | 2000-04-07 | Matsushita Electric Ind Co Ltd | 発光装置 |
| JP2000173766A (ja) * | 1998-09-30 | 2000-06-23 | Sanyo Electric Co Ltd | 表示装置 |
| JP3782245B2 (ja) | 1998-10-28 | 2006-06-07 | Ｔｄｋ株式会社 | 有機ｅｌ表示装置の製造装置及び製造方法 |
| JP3159259B2 (ja) | 1999-01-13 | 2001-04-23 | 日本電気株式会社 | 有機エレクトロルミネッセンス素子 |
| US6759144B2 (en) | 1998-12-16 | 2004-07-06 | Samsung Sdi Co., Ltd. | Organic electroluminescence device |
| JP4505067B2 (ja) * | 1998-12-16 | 2010-07-14 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
| JP2000196140A (ja) | 1998-12-28 | 2000-07-14 | Sharp Corp | 有機エレクトロルミネッセンス素子とその製造法 |
| JP2000252074A (ja) | 1998-12-29 | 2000-09-14 | Tdk Corp | 有機ｅｌ素子 |
| US6468676B1 (en) | 1999-01-02 | 2002-10-22 | Minolta Co., Ltd. | Organic electroluminescent display element, finder screen display device, finder and optical device |
| JP2000200683A (ja) | 1999-01-08 | 2000-07-18 | Futaba Corp | 有機ｅｌ素子 |
| JP3900724B2 (ja) * | 1999-01-11 | 2007-04-04 | セイコーエプソン株式会社 | 有機ｅｌ素子の製造方法および有機ｅｌ表示装置 |
| US6228228B1 (en) | 1999-02-23 | 2001-05-08 | Sarnoff Corporation | Method of making a light-emitting fiber |
| JP2000252077A (ja) | 1999-02-26 | 2000-09-14 | Matsushita Electric Ind Co Ltd | 有機エレクトロルミネッセンス素子 |
| US6541909B1 (en) | 1999-03-02 | 2003-04-01 | Nec Corporation | Organic electroluminescent device with doped transport layer(s) and production method |
| JP2000268968A (ja) * | 1999-03-16 | 2000-09-29 | Sharp Corp | 有機エレクトロルミネッセンス素子 |
| US7001536B2 (en) | 1999-03-23 | 2006-02-21 | The Trustees Of Princeton University | Organometallic complexes as phosphorescent emitters in organic LEDs |
| KR100317284B1 (ko) * | 1999-04-30 | 2001-12-22 | 구자홍 | 유기 이엘(ｅｌ) 소자 |
| EP2306495B1 (en) * | 1999-05-13 | 2017-04-19 | The Trustees of Princeton University | Very high efficiency organic light emitting devices based on electrophosphorescence |
| JP3885412B2 (ja) * | 1999-05-25 | 2007-02-21 | 松下電器産業株式会社 | 有機電界発光素子 |
| JP2001052870A (ja) | 1999-06-03 | 2001-02-23 | Tdk Corp | 有機ｅｌ素子 |
| JP3770368B2 (ja) * | 1999-06-14 | 2006-04-26 | セイコーエプソン株式会社 | 表示装置、回路基板、回路基板の製造方法 |
| KR100683050B1 (ko) | 1999-06-28 | 2007-02-15 | 모토로라 인코포레이티드 | 유기 전계발광 장치 |
| US6392339B1 (en) * | 1999-07-20 | 2002-05-21 | Xerox Corporation | Organic light emitting devices including mixed region |
| US6310360B1 (en) | 1999-07-21 | 2001-10-30 | The Trustees Of Princeton University | Intersystem crossing agents for efficient utilization of excitons in organic light emitting devices |
| JP3650552B2 (ja) * | 1999-09-14 | 2005-05-18 | 三星エスディアイ株式会社 | 有機エレクトロルミネッセンス素子およびこれを用いたパネル |
| JP3589960B2 (ja) * | 1999-09-16 | 2004-11-17 | 株式会社デンソー | 有機ｅｌ素子 |
| US6833668B1 (en) | 1999-09-29 | 2004-12-21 | Sanyo Electric Co., Ltd. | Electroluminescence display device having a desiccant |
| US6458475B1 (en) | 1999-11-24 | 2002-10-01 | The Trustee Of Princeton University | Organic light emitting diode having a blue phosphorescent molecule as an emitter |
| CN2421793Y (zh) | 1999-12-01 | 2001-02-28 | 中国科学院长春光学精密机械研究所 | 高效高色纯度镧系金属配合物有机电致发光器件 |
| US6372154B1 (en) | 1999-12-30 | 2002-04-16 | Canon Kabushiki Kaisha | Luminescent ink for printing of organic luminescent devices |
| TWI252592B (en) * | 2000-01-17 | 2006-04-01 | Semiconductor Energy Lab | EL display device |
| US6432255B1 (en) | 2000-01-31 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus for enhancing chamber cleaning |
| US6237529B1 (en) | 2000-03-03 | 2001-05-29 | Eastman Kodak Company | Source for thermal physical vapor deposition of organic electroluminescent layers |
| KR20010104215A (ko) | 2000-05-12 | 2001-11-24 | 야마자끼 순페이 | 발광장치 제작방법 |
| US6528824B2 (en) | 2000-06-29 | 2003-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US6392250B1 (en) * | 2000-06-30 | 2002-05-21 | Xerox Corporation | Organic light emitting devices having improved performance |
| KR100360308B1 (ko) | 2000-07-03 | 2002-11-18 | 한국화학연구원 | 아세틸렌기를 포함하는 유기화합물, 그 화합물을 이용한증착중합법, 그 방법에 의하여 제조된 증착중합 박막 및그 박막을 사용한 전기 발광소자 |
| TW451601B (en) | 2000-08-07 | 2001-08-21 | Ind Tech Res Inst | The fabrication method of full color organic electroluminescent device |
| TW463522B (en) | 2000-11-07 | 2001-11-11 | Helix Technology Inc | Manufacturing method for organic light emitting diode |
| JP2002146516A (ja) | 2000-11-07 | 2002-05-22 | Sony Corp | 有機薄膜の蒸着方法 |
| US6803720B2 (en) | 2000-12-15 | 2004-10-12 | Universal Display Corporation | Highly stable and efficient OLEDs with a phosphorescent-doped mixed layer architecture |
| TW545080B (en) * | 2000-12-28 | 2003-08-01 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| SG115435A1 (en) | 2000-12-28 | 2005-10-28 | Semiconductor Energy Lab | Luminescent device |
| TW518909B (en) | 2001-01-17 | 2003-01-21 | Semiconductor Energy Lab | Luminescent device and method of manufacturing same |
| TW519770B (en) | 2001-01-18 | 2003-02-01 | Semiconductor Energy Lab | Light emitting device and manufacturing method thereof |
| US6614175B2 (en) | 2001-01-26 | 2003-09-02 | Xerox Corporation | Organic light emitting devices |
| SG118110A1 (en) | 2001-02-01 | 2006-01-27 | Semiconductor Energy Lab | Organic light emitting element and display device using the element |
| US20020139303A1 (en) | 2001-02-01 | 2002-10-03 | Shunpei Yamazaki | Deposition apparatus and deposition method |
| US20030010288A1 (en) | 2001-02-08 | 2003-01-16 | Shunpei Yamazaki | Film formation apparatus and film formation method |
| TWI225312B (en) | 2001-02-08 | 2004-12-11 | Semiconductor Energy Lab | Light emitting device |
| US7432116B2 (en) | 2001-02-21 | 2008-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Method and apparatus for film deposition |
| SG118118A1 (en) | 2001-02-22 | 2006-01-27 | Semiconductor Energy Lab | Organic light emitting device and display using the same |
| WO2003100225A1 (en) * | 2002-05-07 | 2003-12-04 | Extengine Transport Systems | Emission control system |
| KR102204794B1 (ko) * | 2012-08-10 | 2021-01-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자, 발광 장치, 표시 장치, 전자 기기 및 조명 장치 |
-
2001
- 2001-12-18 TW TW090131393A patent/TW545080B/zh not_active IP Right Cessation
- 2001-12-19 SG SG200107839A patent/SG93298A1/en unknown
- 2001-12-20 EP EP01130487A patent/EP1220339A3/en not_active Ceased
- 2001-12-20 MY MYPI20015776A patent/MY130464A/en unknown
- 2001-12-21 US US10/024,699 patent/US7342355B2/en not_active Expired - Fee Related
- 2001-12-26 JP JP2001395213A patent/JP2002324680A/ja not_active Withdrawn
- 2001-12-27 KR KR1020010085940A patent/KR100890163B1/ko not_active Expired - Fee Related
- 2001-12-28 CN CNB011302747A patent/CN1268008C/zh not_active Expired - Lifetime
- 2001-12-28 CN CNB2006100916244A patent/CN100440532C/zh not_active Expired - Fee Related
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- 2007-07-23 JP JP2007190445A patent/JP2007300137A/ja not_active Withdrawn
- 2007-12-31 US US11/967,749 patent/US7915807B2/en not_active Expired - Fee Related
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- 2008-11-26 KR KR1020080117982A patent/KR100929504B1/ko not_active Expired - Lifetime
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2010
- 2010-05-31 JP JP2010123848A patent/JP2010186758A/ja not_active Withdrawn
-
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- 2011-03-23 US US13/069,435 patent/US8432094B2/en not_active Expired - Fee Related
-
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- 2012-11-13 JP JP2012249176A patent/JP2013033762A/ja not_active Withdrawn
-
2013
- 2013-04-29 US US13/872,268 patent/US8878431B2/en not_active Expired - Fee Related
-
2014
- 2014-04-16 JP JP2014084216A patent/JP5925239B2/ja not_active Expired - Lifetime
- 2014-10-30 US US14/527,853 patent/US9209418B2/en not_active Expired - Fee Related
-
2015
- 2015-10-20 JP JP2015206161A patent/JP2016028392A/ja not_active Withdrawn
- 2015-12-03 US US14/957,791 patent/US9362518B2/en not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| US20080111481A1 (en) | 2008-05-15 |
| KR100929504B1 (ko) | 2009-12-03 |
| US20130306942A1 (en) | 2013-11-21 |
| US9362518B2 (en) | 2016-06-07 |
| KR100890163B1 (ko) | 2009-03-25 |
| US8432094B2 (en) | 2013-04-30 |
| US20110169400A1 (en) | 2011-07-14 |
| KR20020055418A (ko) | 2002-07-08 |
| EP1220339A3 (en) | 2009-09-30 |
| JP2014160850A (ja) | 2014-09-04 |
| TW545080B (en) | 2003-08-01 |
| JP2007300137A (ja) | 2007-11-15 |
| US7342355B2 (en) | 2008-03-11 |
| CN1362747A (zh) | 2002-08-07 |
| CN1870285A (zh) | 2006-11-29 |
| MY130464A (en) | 2007-06-29 |
| JP2013033762A (ja) | 2013-02-14 |
| US20020121860A1 (en) | 2002-09-05 |
| CN1268008C (zh) | 2006-08-02 |
| SG93298A1 (en) | 2002-12-17 |
| US7915807B2 (en) | 2011-03-29 |
| JP5925239B2 (ja) | 2016-05-25 |
| EP1220339A2 (en) | 2002-07-03 |
| US8878431B2 (en) | 2014-11-04 |
| CN100440532C (zh) | 2008-12-03 |
| US20160087236A1 (en) | 2016-03-24 |
| KR20080112178A (ko) | 2008-12-24 |
| US20150048357A1 (en) | 2015-02-19 |
| US9209418B2 (en) | 2015-12-08 |
| JP2010186758A (ja) | 2010-08-26 |
| JP2016028392A (ja) | 2016-02-25 |
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