JP2000504879A - 電界効果により制御可能の半導体デバイス - Google Patents
電界効果により制御可能の半導体デバイスInfo
- Publication number
- JP2000504879A JP2000504879A JP9528039A JP52803997A JP2000504879A JP 2000504879 A JP2000504879 A JP 2000504879A JP 9528039 A JP9528039 A JP 9528039A JP 52803997 A JP52803997 A JP 52803997A JP 2000504879 A JP2000504879 A JP 2000504879A
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- Japan
- Prior art keywords
- zone
- depletion
- semiconductor device
- complementary
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 230000005685 electric field effect Effects 0.000 title claims description 12
- 230000000295 complement effect Effects 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims description 24
- 239000002019 doping agent Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims 1
- 230000005669 field effect Effects 0.000 abstract description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- GECHUMIMRBOMGK-UHFFFAOYSA-N sulfapyridine Chemical compound C1=CC(N)=CC=C1S(=O)(=O)NC1=CC=CC=N1 GECHUMIMRBOMGK-UHFFFAOYSA-N 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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Abstract
Description
Claims (1)
- 【特許請求の範囲】 1. a)半導体基体(1)の表面(3)に接する第1の導電形の内部帯域(2 )と、 b)内部帯域(2)に接するドレイン帯域(4)と、 c)上記の半導体基体(1)の表面(3)に埋め込まれている第2の導電形の 少なくとも1つのベース帯域(5)と、 d)ベース帯域(5)に埋め込まれている第1の導電形の少なくとも1つのソ ース帯域(6)と、 e)それぞれベース帯域(5)とそこに埋め込まれているソース帯域(6)を 接触化する少なくとも1つのソース電極(7)と、 f)半導体基体(1)全体と絶縁されているゲート電極(8)と を有する半導体基体(1)から成る電界効果により制御可能の半導体デバイスに おいて、 g)内部帯域(2)内に第2の導電形の多数の空乏帯域(10)と第1の導電 形の単数又は複数の相補性空乏帯域(11)とが設けられており、 h)その際空乏帯域(10)全体のドーピング量が相補性空乏帯域(11)全 体のドーピング量にほぼ相当する ことを特徴とする電界効果により制御可能の半導体デバイス。 2. 空乏帯域(10)と相補性空乏帯域(11)が内部帯域(2)内でそれぞ れ対として配置されていることを特徴とする請求項1記載の半導体デバイス。 3. 空乏帯域(10)と相補性空乏帯域(11)がドレイン帯域(4)にまで 延びていることを特徴とする請求項2記載の半導体デバイス。 4. 内部帯域(2)及び/又はドレイン帯域(4)内に対として設けられてい る空乏帯域(10)と相補性空乏帯域(11)の相互間隔が≧0及び空間電荷帯 域の幅より小さいか等しいことを特徴とする請求項2又は3記載の半導体デバイ ス。 5. 空乏帯域(10)及び/又は相補性空乏帯域(11)が条片状又は糸状又 はほぼ球形に形成されていることを特徴とする請求項1乃至4のいずれか1つに 記載の半導体デバイス。 6. 設けられている中間セル帯域(13)内に、ソース側表面(3)から内部 帯域(2)内にトレンチ(14)が延びており、その際トレンチ(14)は少な くとも絶縁体で満たされており、トレンチ(14)がそのトレンチ壁面(15) に対として配置されている空乏帯域(10)及び相補性空乏帯域(11)を設け られていることを特徴とする請求項1記載の半導体デバイス。 7. トレンチ(14)がほぼV字形に形成されていることを特徴とする請求項 6記載の半導体デバイス。 8. トレンチ(14)がほぼU字形に形成されていることを特徴とする請求項 6記載の半導体デバイス。 9. 唯一つの相補性空乏帯域(11)が設けられ、その中に多数の空乏帯域( 10)が設けられていることを特徴とする請求項1記載の半導体デバイス。 10. 空乏帯域(10)がほぼ球形に形成されていることを特徴とする請求項 9記載の半導体デバイス。 11. 唯一の相補性空乏帯域(11)が内部帯域(2)と同一であることを特 徴とする請求項9記載の半導体デバイス。 12. 1)基板上に拡散係数が互いに明らかに異なっているp形ドーパントと n形ドーパントをほぼ同量含んでいる第1のエピタキシャル層を施し、 2)第1のエピタキシャル層内にトレンチをエッチングし、 3)トレンチを第2の高オームのエピタキシャル層で満たし、 4)このように処理された基板にその後第1のエピタキシャル層の異なる速度 で拡散する両ドーパントを第2のエピタキシャル層内に拡散できるようにし、拡 散挙動が異なることから対の空乏帯域と相補性空乏帯域がトレンチの縁部に形成 されるように熱処理を施す 工程を特徴とする対に配置されている空乏帯域と相補性空乏帯域の製造方法。 13.a)空間的に互いに分離され、それぞれソース電極(7)とドレイン電極 (9)とを設けられている第2の導電形のソース帯域(6)とドレイン帯域(4 )と、 b) ソース帯域(6)とドレイン帯域(4)との間にありドレイン帯域(4 )に接する第2の導電形のドリフト帯域(12)と c) ソース帯域(6)とドリフト帯域(12)を部分的に覆う半導体基体( 1)の表面(3)と絶縁されているゲート電極(8)と を有する第1の導電形の半導体基体(1)から成る電界効果により制御可能の半 導体デバイスにおいて、 d) ドリフト帯域(12)内に第2の導電形の単数及び複数の空乏帯域(1 0)が設けられており、 e) その際ドリフト帯域(12)全体のドーピング量が空乏帯域(10)全 体のドーピング量にほぼ相当する ことを特徴とする電界効果により制御可能の半導体デバイス。 14. 空乏帯域(10)の相互間隔がドリフト帯域(12)と空乏帯域(10 )との間の空間電荷帯域の幅に等しいかそれ以下であることを特徴とする請求項 13記載の半導体デバイス。 15. ドリフト帯域(12)に設けられている空乏帯域(10)がほぼ球形に 形成されていることを特徴とする請求項13又は14記載の半導体デバイス。
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DE19604043A DE19604043C2 (de) | 1996-02-05 | 1996-02-05 | Durch Feldeffekt steuerbares Halbleiterbauelement |
DE19604044A DE19604044C2 (de) | 1996-02-05 | 1996-02-05 | Durch Feldeffekt steuerbares Halbleiterbauelement |
DE19604043.4 | 1996-02-05 | ||
DE19604044.2 | 1996-02-05 | ||
PCT/DE1997/000182 WO1997029518A1 (de) | 1996-02-05 | 1997-01-30 | Durch feldeffekt steuerbares halbleiterbauelement |
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JP52803997A Expired - Fee Related JP4047384B2 (ja) | 1996-02-05 | 1997-01-30 | 電界効果により制御可能の半導体デバイス |
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US (1) | US6184555B1 (ja) |
EP (3) | EP1408554B1 (ja) |
JP (1) | JP4047384B2 (ja) |
DE (2) | DE59707158D1 (ja) |
WO (1) | WO1997029518A1 (ja) |
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- 1997-01-30 EP EP03026265.3A patent/EP1408554B1/de not_active Expired - Lifetime
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JP2002517097A (ja) * | 1998-05-28 | 2002-06-11 | インフィネオン テクノロジース アクチエンゲゼルシャフト | パワーダイオード構造体 |
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JP2003046082A (ja) * | 2001-05-25 | 2003-02-14 | Toshiba Corp | 半導体装置及びその製造方法 |
US7226841B2 (en) | 2001-05-25 | 2007-06-05 | Kabushiki Kaisha Toshiba | Power MOSFET semiconductor device and method of manufacturing the same |
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US6878989B2 (en) | 2001-05-25 | 2005-04-12 | Kabushiki Kaisha Toshiba | Power MOSFET semiconductor device and method of manufacturing the same |
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JP2005505921A (ja) * | 2001-10-04 | 2005-02-24 | ゼネラル セミコンダクター,インク. | フローティングアイランド電圧維持層を有する半導体パワーデバイス |
JP2005505918A (ja) * | 2001-10-04 | 2005-02-24 | ゼネラル セミコンダクター,インク. | フローティングアイランドを形成するための雛壇状のトレンチを有する電圧維持層を備える半導体パワーデバイスの製造方法 |
JP4743744B2 (ja) * | 2001-10-04 | 2011-08-10 | ゼネラル セミコンダクター,インク. | フローティングアイランド電圧維持層を有する半導体パワーデバイス |
US6855998B2 (en) | 2002-03-26 | 2005-02-15 | Kabushiki Kaisha Toshiba | Semiconductor device |
US6740931B2 (en) | 2002-04-17 | 2004-05-25 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP2006505136A (ja) * | 2002-10-31 | 2006-02-09 | フリースケール セミコンダクター インコーポレイテッド | Resurトランジスタを含む半導体部品及びその製造方法 |
JP4744146B2 (ja) * | 2002-10-31 | 2011-08-10 | フリースケール セミコンダクター インコーポレイテッド | 表面電界緩和型トランジスタを備える半導体部品 |
US7355257B2 (en) | 2005-03-08 | 2008-04-08 | Fuji Electric Holdings Co., Ltd. | Semiconductor superjunction device |
JP2006253223A (ja) * | 2005-03-08 | 2006-09-21 | Fuji Electric Holdings Co Ltd | 超接合半導体装置 |
US10468510B2 (en) | 2015-07-16 | 2019-11-05 | Fuji Electric Co., Ltd. | Semiconductor device and manufacturing method of the same |
Also Published As
Publication number | Publication date |
---|---|
EP0879481A1 (de) | 1998-11-25 |
WO1997029518A1 (de) | 1997-08-14 |
EP1408554A3 (de) | 2009-05-27 |
JP4047384B2 (ja) | 2008-02-13 |
DE59707158D1 (de) | 2002-06-06 |
EP1408554B1 (de) | 2015-03-25 |
EP1408554A2 (de) | 2004-04-14 |
EP1039548A2 (de) | 2000-09-27 |
DE59711481D1 (de) | 2004-05-06 |
EP1039548A4 (en) | 2000-12-05 |
EP1039548B1 (de) | 2004-03-31 |
US6184555B1 (en) | 2001-02-06 |
EP0879481B1 (de) | 2002-05-02 |
EP1039548A3 (de) | 2001-01-17 |
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