ITMI921505A0 - Dispositivo di memoria a semiconduttore elettricamente cancellabile e programmabile con transistor di memoria a solcatura e procedimento pe la sua fabbricazione - Google Patents

Dispositivo di memoria a semiconduttore elettricamente cancellabile e programmabile con transistor di memoria a solcatura e procedimento pe la sua fabbricazione

Info

Publication number
ITMI921505A0
ITMI921505A0 IT92MI1505A ITMI921505A ITMI921505A0 IT MI921505 A0 ITMI921505 A0 IT MI921505A0 IT 92MI1505 A IT92MI1505 A IT 92MI1505A IT MI921505 A ITMI921505 A IT MI921505A IT MI921505 A0 ITMI921505 A0 IT MI921505A0
Authority
IT
Italy
Prior art keywords
procedure
manufacture
electrically erasable
groove
memory device
Prior art date
Application number
IT92MI1505A
Other languages
English (en)
Inventor
Swtsuo Wake
Original Assignee
Mitsubishi Demki Kabushiki Kai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Demki Kabushiki Kai filed Critical Mitsubishi Demki Kabushiki Kai
Publication of ITMI921505A0 publication Critical patent/ITMI921505A0/it
Publication of ITMI921505A1 publication Critical patent/ITMI921505A1/it
Application granted granted Critical
Publication of IT1254972B publication Critical patent/IT1254972B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
ITMI921505A 1991-06-20 1992-06-18 Dispositivo di memoria a semiconduttore elettricamente cancellabile e programmabile con transistor di memoria a solcatura e procedimento perla sua fabbricazione IT1254972B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14856791 1991-06-20
JP4032027A JPH0567791A (ja) 1991-06-20 1992-02-19 電気的に書込および消去可能な半導体記憶装置およびその製造方法

Publications (3)

Publication Number Publication Date
ITMI921505A0 true ITMI921505A0 (it) 1992-06-18
ITMI921505A1 ITMI921505A1 (it) 1993-12-18
IT1254972B IT1254972B (it) 1995-10-11

Family

ID=26370547

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI921505A IT1254972B (it) 1991-06-20 1992-06-18 Dispositivo di memoria a semiconduttore elettricamente cancellabile e programmabile con transistor di memoria a solcatura e procedimento perla sua fabbricazione

Country Status (5)

Country Link
US (2) US5338953A (it)
JP (1) JPH0567791A (it)
KR (1) KR960011820B1 (it)
DE (1) DE4219854C2 (it)
IT (1) IT1254972B (it)

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6081449A (en) * 1987-05-12 2000-06-27 Altera Corporation High-density nonvolatile memory cell
US5281548A (en) * 1992-07-28 1994-01-25 Micron Technology, Inc. Plug-based floating gate memory
US5386132A (en) * 1992-11-02 1995-01-31 Wong; Chun C. D. Multimedia storage system with highly compact memory device
US5379255A (en) * 1992-12-14 1995-01-03 Texas Instruments Incorporated Three dimensional famos memory devices and methods of fabricating
JP3200497B2 (ja) * 1993-03-19 2001-08-20 三菱電機株式会社 電気的に情報の書込および消去が可能な半導体記憶装置およびその製造方法
US5460988A (en) * 1994-04-25 1995-10-24 United Microelectronics Corporation Process for high density flash EPROM cell
US5429970A (en) * 1994-07-18 1995-07-04 United Microelectronics Corporation Method of making flash EEPROM memory cell
US5554550A (en) * 1994-09-14 1996-09-10 United Microelectronics Corporation Method of fabricating electrically eraseable read only memory cell having a trench
US5703387A (en) * 1994-09-30 1997-12-30 United Microelectronics Corp. Split gate memory cell with vertical floating gate
US5705415A (en) * 1994-10-04 1998-01-06 Motorola, Inc. Process for forming an electrically programmable read-only memory cell
KR0151623B1 (ko) * 1994-12-07 1998-10-01 문정환 이이피롬 셀 및 그 제조방법
DE19524478C2 (de) * 1995-07-05 2002-03-14 Infineon Technologies Ag Verfahren zur Herstellung einer Festwertspeicherzellenanordnung
US5672524A (en) * 1995-08-01 1997-09-30 Advanced Micro Devices, Inc. Three-dimensional complementary field effect transistor process
US5945705A (en) * 1995-08-01 1999-08-31 Advanced Micro Devices, Inc. Three-dimensional non-volatile memory
JP3403877B2 (ja) * 1995-10-25 2003-05-06 三菱電機株式会社 半導体記憶装置とその製造方法
DE19600423C2 (de) * 1996-01-08 2001-07-05 Siemens Ag Elektrisch programmierbare Speicherzellenanordnung und Verfahren zu deren Herstellung
US5998263A (en) * 1996-05-16 1999-12-07 Altera Corporation High-density nonvolatile memory cell
US5751040A (en) * 1996-09-16 1998-05-12 Taiwan Semiconductor Manufacturing Company Ltd. Self-aligned source/drain mask ROM memory cell using trench etched channel
JP3075192B2 (ja) * 1996-09-30 2000-08-07 日本電気株式会社 半導体装置の製造方法
KR100223915B1 (ko) 1996-10-22 1999-10-15 구본준 반도체 소자의 구조 및 제조방법
US5751038A (en) * 1996-11-26 1998-05-12 Philips Electronics North America Corporation Electrically erasable and programmable read only memory (EEPROM) having multiple overlapping metallization layers
US5874760A (en) * 1997-01-22 1999-02-23 International Business Machines Corporation 4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation
US5990509A (en) * 1997-01-22 1999-11-23 International Business Machines Corporation 2F-square memory cell for gigabit memory applications
US6034389A (en) * 1997-01-22 2000-03-07 International Business Machines Corporation Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array
US5929477A (en) * 1997-01-22 1999-07-27 International Business Machines Corporation Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array
FR2767219B1 (fr) * 1997-08-08 1999-09-17 Commissariat Energie Atomique Dispositif memoire non volatile programmable et effacable electriquement compatible avec un procede de fabrication cmos/soi
US6229148B1 (en) * 1997-08-11 2001-05-08 Micron Technology, Inc. Ion implantation with programmable energy, angle, and beam current
JP3425853B2 (ja) * 1997-08-29 2003-07-14 Ｎｅｃエレクトロニクス株式会社 不揮発性半導体記憶装置
US5960284A (en) * 1997-12-05 1999-09-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming vertical channel flash memory cell and device manufactured thereby
US5970341A (en) * 1997-12-11 1999-10-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming vertical channels in split-gate flash memory cell
US6093606A (en) * 1998-03-05 2000-07-25 Taiwan Semiconductor Manufacturing Company Method of manufacture of vertical stacked gate flash memory device
KR100277885B1 (ko) * 1998-04-29 2001-02-01 김영환 불휘발성메모리소자및그제조방법
US6252271B1 (en) * 1998-06-15 2001-06-26 International Business Machines Corporation Flash memory structure using sidewall floating gate and method for forming the same
EP0969507B1 (en) 1998-06-30 2006-11-15 STMicroelectronics S.r.l. EEPROM memory cell manufacturing method
US6137132A (en) * 1998-06-30 2000-10-24 Acer Semiconductor Manufacturing Inc. High density buried bit line flash EEPROM memory cell with a shallow trench floating gate
US6118147A (en) * 1998-07-07 2000-09-12 Advanced Micro Devices, Inc. Double density non-volatile memory cells
KR100292056B1 (ko) * 1998-09-14 2001-07-12 김영환 반도체장치및그의제조방법
US6555870B1 (en) * 1999-06-29 2003-04-29 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method for producing same
US6597035B1 (en) * 1999-08-04 2003-07-22 Texas Instruments Incorporated Robust reference sensing cell for flash memory
WO2001017022A1 (en) * 1999-08-27 2001-03-08 Infineon Technologies North America Corp. Semiconductor device with buried bitlines
US6682978B1 (en) 1999-08-30 2004-01-27 Advanced Micro Devices, Inc. Integrated circuit having increased gate coupling capacitance
US6576949B1 (en) * 1999-08-30 2003-06-10 Advanced Micro Devices, Inc. Integrated circuit having optimized gate coupling capacitance
JP4635333B2 (ja) * 2000-12-14 2011-02-23 ソニー株式会社 半導体装置の製造方法
US6465836B2 (en) * 2001-03-29 2002-10-15 Taiwan Semiconductor Manufacturing Co., Ltd Vertical split gate field effect transistor (FET) device
US6944056B2 (en) 2001-04-02 2005-09-13 Renesas Technology Corp. Semiconductor non-volatile storage device
KR100364815B1 (en) 2001-04-28 2002-12-16 Hynix Semiconductor Inc High voltage device and fabricating method thereof
US7476925B2 (en) * 2001-08-30 2009-01-13 Micron Technology, Inc. Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interploy insulators
US7132711B2 (en) * 2001-08-30 2006-11-07 Micron Technology, Inc. Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers
US6963103B2 (en) * 2001-08-30 2005-11-08 Micron Technology, Inc. SRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators
US6778441B2 (en) * 2001-08-30 2004-08-17 Micron Technology, Inc. Integrated circuit memory device and method
US7087954B2 (en) * 2001-08-30 2006-08-08 Micron Technology, Inc. In service programmable logic arrays with low tunnel barrier interpoly insulators
US7068544B2 (en) 2001-08-30 2006-06-27 Micron Technology, Inc. Flash memory with low tunnel barrier interpoly insulators
JP2003078048A (ja) * 2001-09-04 2003-03-14 Sony Corp 不揮発性半導体メモリ装置およびその動作方法
US6952033B2 (en) * 2002-03-20 2005-10-04 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with buried bit-line and raised source line
US6917069B2 (en) * 2001-10-17 2005-07-12 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with buried bit-line and vertical word line transistor
US6486028B1 (en) * 2001-11-20 2002-11-26 Macronix International Co., Ltd. Method of fabricating a nitride read-only-memory cell vertical structure
US7411246B2 (en) * 2002-04-01 2008-08-12 Silicon Storage Technology, Inc. Self aligned method of forming a semiconductor memory array of floating gate memory cells with buried bit-line and raised source line, and a memory array made thereby
US6952034B2 (en) * 2002-04-05 2005-10-04 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with buried source line and floating gate
US6891220B2 (en) * 2002-04-05 2005-05-10 Silicon Storage Technology, Inc. Method of programming electrons onto a floating gate of a non-volatile memory cell
KR100487523B1 (ko) * 2002-04-15 2005-05-03 삼성전자주식회사 부유트랩형 비휘발성 메모리 소자 및 그 제조방법
JP2003309192A (ja) * 2002-04-17 2003-10-31 Fujitsu Ltd 不揮発性半導体メモリおよびその製造方法
US6680508B1 (en) * 2002-08-28 2004-01-20 Micron Technology, Inc. Vertical floating gate transistor
KR100486075B1 (ko) * 2002-09-19 2005-04-29 동부아남반도체 주식회사 트렌치 구조의 플래시 메모리 셀과 그 제조 방법
TW583755B (en) * 2002-11-18 2004-04-11 Nanya Technology Corp Method for fabricating a vertical nitride read-only memory (NROM) cell
TW588438B (en) * 2003-08-08 2004-05-21 Nanya Technology Corp Multi-bit vertical memory cell and method of fabricating the same
US6906379B2 (en) * 2003-08-28 2005-06-14 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with buried floating gate
US20050259467A1 (en) * 2004-05-18 2005-11-24 Micron Technology, Inc. Split gate flash memory cell with ballistic injection
KR100630725B1 (ko) * 2004-12-17 2006-10-02 삼성전자주식회사 매립된 비트라인을 가진 반도체 소자 및 그 제조방법
US7166888B2 (en) * 2005-01-27 2007-01-23 Micron Technology, Inc. Scalable high density non-volatile memory cells in a contactless memory array
US7572695B2 (en) 2005-05-27 2009-08-11 Micron Technology, Inc. Hafnium titanium oxide films
US7859026B2 (en) * 2006-03-16 2010-12-28 Spansion Llc Vertical semiconductor device
KR100825383B1 (ko) * 2006-04-24 2008-04-29 삼성에스디아이 주식회사 비휘발성 메모리 소자, 이를 제조하는 방법 및 이를포함하는 유기 전계 발광 표시 장치
KR100774904B1 (ko) * 2006-10-23 2007-11-08 삼성전자주식회사 불 휘발성 메모리 소자 및 이를 형성하기 위한 방법
US20080157170A1 (en) * 2006-12-29 2008-07-03 Atmel Corporation Eeprom cell with adjustable barrier in the tunnel window region
US8035154B2 (en) * 2007-11-07 2011-10-11 Denso Corporation Semiconductor device including a plurality of memory cells with no difference in erasing properties
US8148768B2 (en) * 2008-11-26 2012-04-03 Silicon Storage Technology, Inc. Non-volatile memory cell with self aligned floating and erase gates, and method of making same
JP5662865B2 (ja) 2010-05-19 2015-02-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2014053435A (ja) * 2012-09-06 2014-03-20 Toshiba Corp 半導体装置
US9269709B2 (en) 2013-02-25 2016-02-23 Taiwan Semiconductor Manufacturing Company, Ltd. MOS transistor structure and method
US9293204B2 (en) * 2013-04-16 2016-03-22 Silicon Storage Technology, Inc. Non-volatile memory cell with self aligned floating and erase gates, and method of making same
US9147729B2 (en) * 2014-02-25 2015-09-29 Micron Technology, Inc. Methods of forming transistors
KR102142155B1 (ko) * 2014-03-21 2020-08-10 에스케이하이닉스 주식회사 단일층 플로팅 게이트 비휘발성 메모리 소자 및 제조 방법
JP5815786B2 (ja) * 2014-04-09 2015-11-17 ローム株式会社 半導体装置
TWI597826B (zh) * 2016-01-27 2017-09-01 聯華電子股份有限公司 具內埋式單元之半導體元件及其製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
JPS61135151A (ja) * 1984-12-05 1986-06-23 Mitsubishi Electric Corp 半導体記憶装置
JPS61256673A (ja) * 1985-05-08 1986-11-14 Fujitsu Ltd 半導体装置
US4796228A (en) * 1986-06-02 1989-01-03 Texas Instruments Incorporated Erasable electrically programmable read only memory cell using trench edge tunnelling
JP2519215B2 (ja) * 1986-08-14 1996-07-31 株式会社東芝 半導体記憶装置の製造方法
JPS6384166A (ja) * 1986-09-29 1988-04-14 Toshiba Corp Ｅｐｒｏｍセル
JPS63102372A (ja) * 1986-10-20 1988-05-07 Fujitsu Ltd Ｅｅｐｒｏｍの製造方法
JPS63142680A (ja) * 1986-12-05 1988-06-15 Fuji Xerox Co Ltd 半導体記憶装置及びその製造方法
JPS63285966A (ja) * 1987-05-19 1988-11-22 Fujitsu Ltd 半導体装置
KR890001099A (ko) * 1987-06-08 1989-03-18 미다 가쓰시게 반도체 기억장치
JP2735193B2 (ja) * 1987-08-25 1998-04-02 株式会社東芝 不揮発性半導体装置及びその製造方法
JPH01150364A (ja) * 1987-12-07 1989-06-13 Sony Corp メモリ装置の製法
JPH01291470A (ja) * 1988-05-18 1989-11-24 Mitsubishi Electric Corp 半導体装置
US5045490A (en) * 1990-01-23 1991-09-03 Texas Instruments Incorporated Method of making a pleated floating gate trench EPROM
US5071782A (en) * 1990-06-28 1991-12-10 Texas Instruments Incorporated Vertical memory cell array and method of fabrication
US5180680A (en) * 1991-05-17 1993-01-19 United Microelectronics Corporation Method of fabricating electrically erasable read only memory cell
JPH06346760A (ja) * 1993-06-14 1994-12-20 Nippondenso Co Ltd 燃料噴射時期調整装置

Also Published As

Publication number Publication date
DE4219854C2 (de) 1994-09-29
US5460989A (en) 1995-10-24
ITMI921505A1 (it) 1993-12-18
JPH0567791A (ja) 1993-03-19
DE4219854A1 (de) 1992-12-24
KR960011820B1 (en) 1996-08-30
US5338953A (en) 1994-08-16
IT1254972B (it) 1995-10-11

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970628