KR960011820B1 - Electrically erasable and programmable semiconductor memory device with trench memory transistor and manufacturing method thereof - Google Patents

Electrically erasable and programmable semiconductor memory device with trench memory transistor and manufacturing method thereof Download PDF

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Publication number
KR960011820B1
KR960011820B1 KR92010682A KR920010682A KR960011820B1 KR 960011820 B1 KR960011820 B1 KR 960011820B1 KR 92010682 A KR92010682 A KR 92010682A KR 920010682 A KR920010682 A KR 920010682A KR 960011820 B1 KR960011820 B1 KR 960011820B1
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KR
South Korea
Prior art keywords
manufacturing
electrically erasable
memory device
programmable semiconductor
trench
Prior art date
Application number
KR92010682A
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English (en)
Inventor
Wake Setsuo
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
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Publication of KR960011820B1 publication Critical patent/KR960011820B1/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
KR92010682A 1991-06-20 1992-06-19 Electrically erasable and programmable semiconductor memory device with trench memory transistor and manufacturing method thereof KR960011820B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14856791 1991-06-20
JP4032027A JPH0567791A (ja) 1991-06-20 1992-02-19 電気的に書込および消去可能な半導体記憶装置およびその製造方法

Publications (1)

Publication Number Publication Date
KR960011820B1 true KR960011820B1 (en) 1996-08-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR92010682A KR960011820B1 (en) 1991-06-20 1992-06-19 Electrically erasable and programmable semiconductor memory device with trench memory transistor and manufacturing method thereof

Country Status (5)

Country Link
US (2) US5338953A (ko)
JP (1) JPH0567791A (ko)
KR (1) KR960011820B1 (ko)
DE (1) DE4219854C2 (ko)
IT (1) IT1254972B (ko)

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US7501682B2 (en) 2006-04-24 2009-03-10 Samsung Sdi Co., Ltd. Nonvolatile memory device, method of fabricating the same, and organic lighting emitting diode display device including the same

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Publication number Priority date Publication date Assignee Title
US7501682B2 (en) 2006-04-24 2009-03-10 Samsung Sdi Co., Ltd. Nonvolatile memory device, method of fabricating the same, and organic lighting emitting diode display device including the same

Also Published As

Publication number Publication date
DE4219854C2 (de) 1994-09-29
US5460989A (en) 1995-10-24
ITMI921505A1 (it) 1993-12-18
JPH0567791A (ja) 1993-03-19
DE4219854A1 (de) 1992-12-24
US5338953A (en) 1994-08-16
IT1254972B (it) 1995-10-11
ITMI921505A0 (it) 1992-06-18

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