KR970700916A - 비휘발성 메모리 트랜지스터가 있는 반도체 메모리(Semicondutor memory with non-volatile memory transistor) - Google Patents
비휘발성 메모리 트랜지스터가 있는 반도체 메모리(Semicondutor memory with non-volatile memory transistor)Info
- Publication number
- KR970700916A KR970700916A KR1019960704267A KR19960704267A KR970700916A KR 970700916 A KR970700916 A KR 970700916A KR 1019960704267 A KR1019960704267 A KR 1019960704267A KR 19960704267 A KR19960704267 A KR 19960704267A KR 970700916 A KR970700916 A KR 970700916A
- Authority
- KR
- South Korea
- Prior art keywords
- volatile memory
- semiconductor memory
- transistor
- memory
- memory transistor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9424598A GB9424598D0 (en) | 1994-12-06 | 1994-12-06 | Semiconductor memory with non-volatile memory transistor |
PCT/IB1995/000949 WO1996018194A2 (en) | 1994-12-06 | 1995-11-02 | Semiconductor memory with non-volatile memory transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970700916A true KR970700916A (ko) | 1997-02-12 |
Family
ID=10765496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960704267A KR970700916A (ko) | 1994-12-06 | 1996-08-06 | 비휘발성 메모리 트랜지스터가 있는 반도체 메모리(Semicondutor memory with non-volatile memory transistor) |
Country Status (6)
Country | Link |
---|---|
US (1) | US5621683A (ko) |
EP (1) | EP0742944A1 (ko) |
JP (1) | JPH09510039A (ko) |
KR (1) | KR970700916A (ko) |
GB (1) | GB9424598D0 (ko) |
WO (1) | WO1996018194A2 (ko) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3634089B2 (ja) * | 1996-09-04 | 2005-03-30 | 株式会社半導体エネルギー研究所 | 表示装置 |
US6518617B1 (en) * | 1996-12-31 | 2003-02-11 | Sony Corporation | Nonvolatile semiconductor memory device |
US6667494B1 (en) | 1997-08-19 | 2003-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and semiconductor display device |
JPH11143379A (ja) * | 1997-09-03 | 1999-05-28 | Semiconductor Energy Lab Co Ltd | 半導体表示装置補正システムおよび半導体表示装置の補正方法 |
JP3643864B2 (ja) * | 1999-05-18 | 2005-04-27 | 国立大学法人広島大学 | 酸化膜の角で生じるキャリヤのディープレベル捕獲を利用した不揮発性メモリ |
US6555870B1 (en) * | 1999-06-29 | 2003-04-29 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method for producing same |
TWI281748B (en) * | 2001-12-18 | 2007-05-21 | Matsushita Electric Ind Co Ltd | Non-volatile memory |
US7221586B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
US6865407B2 (en) * | 2002-07-11 | 2005-03-08 | Optical Sensors, Inc. | Calibration technique for non-invasive medical devices |
US6888200B2 (en) * | 2002-08-30 | 2005-05-03 | Micron Technology Inc. | One transistor SOI non-volatile random access memory cell |
US6903969B2 (en) * | 2002-08-30 | 2005-06-07 | Micron Technology Inc. | One-device non-volatile random access memory cell |
US6917078B2 (en) * | 2002-08-30 | 2005-07-12 | Micron Technology Inc. | One transistor SOI non-volatile random access memory cell |
US7005350B2 (en) * | 2002-12-31 | 2006-02-28 | Matrix Semiconductor, Inc. | Method for fabricating programmable memory array structures incorporating series-connected transistor strings |
US7505321B2 (en) * | 2002-12-31 | 2009-03-17 | Sandisk 3D Llc | Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same |
US7233522B2 (en) * | 2002-12-31 | 2007-06-19 | Sandisk 3D Llc | NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same |
US6879505B2 (en) | 2003-03-31 | 2005-04-12 | Matrix Semiconductor, Inc. | Word line arrangement having multi-layer word line segments for three-dimensional memory array |
US7233024B2 (en) | 2003-03-31 | 2007-06-19 | Sandisk 3D Llc | Three-dimensional memory device incorporating segmented bit line memory array |
US6822903B2 (en) * | 2003-03-31 | 2004-11-23 | Matrix Semiconductor, Inc. | Apparatus and method for disturb-free programming of passive element memory cells |
US8125003B2 (en) * | 2003-07-02 | 2012-02-28 | Micron Technology, Inc. | High-performance one-transistor memory cell |
US7079148B2 (en) * | 2003-07-23 | 2006-07-18 | Hewlett-Packard Development Company, L.P. | Non-volatile memory parallel processor |
US7177183B2 (en) | 2003-09-30 | 2007-02-13 | Sandisk 3D Llc | Multiple twin cell non-volatile memory array and logic block structure and method therefor |
US7195992B2 (en) * | 2003-10-07 | 2007-03-27 | Sandisk 3D Llc | Method of uniform seeding to control grain and defect density of crystallized silicon for use in sub-micron thin film transistors |
US20050128807A1 (en) * | 2003-12-05 | 2005-06-16 | En-Hsing Chen | Nand memory array incorporating multiple series selection devices and method for operation of same |
US7221588B2 (en) * | 2003-12-05 | 2007-05-22 | Sandisk 3D Llc | Memory array incorporating memory cells arranged in NAND strings |
US7423304B2 (en) | 2003-12-05 | 2008-09-09 | Sandisck 3D Llc | Optimization of critical dimensions and pitch of patterned features in and above a substrate |
US7023739B2 (en) * | 2003-12-05 | 2006-04-04 | Matrix Semiconductor, Inc. | NAND memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same |
US7145186B2 (en) | 2004-08-24 | 2006-12-05 | Micron Technology, Inc. | Memory cell with trenched gated thyristor |
US7359279B2 (en) * | 2005-03-31 | 2008-04-15 | Sandisk 3D Llc | Integrated circuit memory array configuration including decoding compatibility with partial implementation of multiple memory layers |
US7142471B2 (en) * | 2005-03-31 | 2006-11-28 | Sandisk 3D Llc | Method and apparatus for incorporating block redundancy in a memory array |
US7054219B1 (en) | 2005-03-31 | 2006-05-30 | Matrix Semiconductor, Inc. | Transistor layout configuration for tight-pitched memory array lines |
US7272052B2 (en) * | 2005-03-31 | 2007-09-18 | Sandisk 3D Llc | Decoding circuit for non-binary groups of memory line drivers |
US7382658B2 (en) * | 2006-01-26 | 2008-06-03 | Mosys, Inc. | Non-volatile memory embedded in a conventional logic process and methods for operating same |
WO2008024387A2 (en) * | 2006-08-22 | 2008-02-28 | Embarq Holdings Company Llc | System and method for synchronizing counters on an asynchronous packet communications network |
JP2008181634A (ja) * | 2006-12-26 | 2008-08-07 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
US8558295B2 (en) * | 2009-08-25 | 2013-10-15 | Electronics And Telecommunications Research Institute | Nonvolatile memory cell and method of manufacturing the same |
TWI543177B (zh) | 2010-08-19 | 2016-07-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其檢驗方法與其驅動方法 |
JP2013089724A (ja) * | 2011-10-17 | 2013-05-13 | Elpida Memory Inc | 窒化シリコン膜の成膜方法、不揮発性記憶装置の製造方法 |
EP3105762A1 (en) * | 2014-02-11 | 2016-12-21 | IMEC vzw | Method for customizing thin film electronic circuits |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52153630A (en) * | 1976-06-16 | 1977-12-20 | Matsushita Electric Ind Co Ltd | Semiconductor memory device |
NL8200756A (nl) * | 1982-02-25 | 1983-09-16 | Philips Nv | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
JPS6038799A (ja) * | 1983-08-11 | 1985-02-28 | Seiko Instr & Electronics Ltd | 半導体不揮発性メモリ用読み出し回路 |
GB2233822A (en) * | 1989-07-12 | 1991-01-16 | Philips Electronic Associated | A thin film field effect transistor |
FR2650109B1 (fr) * | 1989-07-20 | 1993-04-02 | Gemplus Card Int | Circuit integre mos a tension de seuil ajustable |
JPH04289593A (ja) * | 1991-03-19 | 1992-10-14 | Fujitsu Ltd | 不揮発性半導体記憶装置 |
GB9113795D0 (en) * | 1991-06-26 | 1991-08-14 | Philips Electronic Associated | Thin-film rom devices and their manufacture |
JP2953196B2 (ja) * | 1992-05-15 | 1999-09-27 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
US5440159A (en) * | 1993-09-20 | 1995-08-08 | Atmel Corporation | Single layer polysilicon EEPROM having uniform thickness gate oxide/capacitor dielectric layer |
-
1994
- 1994-12-06 GB GB9424598A patent/GB9424598D0/en active Pending
-
1995
- 1995-11-02 WO PCT/IB1995/000949 patent/WO1996018194A2/en not_active Application Discontinuation
- 1995-11-02 EP EP95934772A patent/EP0742944A1/en not_active Withdrawn
- 1995-11-02 JP JP8517446A patent/JPH09510039A/ja not_active Ceased
- 1995-12-05 US US08/567,250 patent/US5621683A/en not_active Expired - Fee Related
-
1996
- 1996-08-06 KR KR1019960704267A patent/KR970700916A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP0742944A1 (en) | 1996-11-20 |
WO1996018194A3 (en) | 1997-04-03 |
GB9424598D0 (en) | 1995-01-25 |
US5621683A (en) | 1997-04-15 |
JPH09510039A (ja) | 1997-10-07 |
WO1996018194A2 (en) | 1996-06-13 |
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WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |