DE69119277D1 - Nichtflüchtiger Halbleiterspeicher - Google Patents

Nichtflüchtiger Halbleiterspeicher

Info

Publication number
DE69119277D1
DE69119277D1 DE69119277T DE69119277T DE69119277D1 DE 69119277 D1 DE69119277 D1 DE 69119277D1 DE 69119277 T DE69119277 T DE 69119277T DE 69119277 T DE69119277 T DE 69119277T DE 69119277 D1 DE69119277 D1 DE 69119277D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
volatile semiconductor
volatile
memory
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69119277T
Other languages
English (en)
Other versions
DE69119277T2 (de
Inventor
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69119277D1 publication Critical patent/DE69119277D1/de
Publication of DE69119277T2 publication Critical patent/DE69119277T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
DE69119277T 1990-02-28 1991-02-28 Nichtflüchtiger Halbleiterspeicher Expired - Fee Related DE69119277T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4812690A JP2624864B2 (ja) 1990-02-28 1990-02-28 不揮発性半導体メモリ

Publications (2)

Publication Number Publication Date
DE69119277D1 true DE69119277D1 (de) 1996-06-13
DE69119277T2 DE69119277T2 (de) 1996-10-02

Family

ID=12794637

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69119277T Expired - Fee Related DE69119277T2 (de) 1990-02-28 1991-02-28 Nichtflüchtiger Halbleiterspeicher

Country Status (5)

Country Link
US (2) US5418742A (de)
EP (1) EP0447856B1 (de)
JP (1) JP2624864B2 (de)
KR (1) KR920000079A (de)
DE (1) DE69119277T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3204666B2 (ja) * 1990-11-21 2001-09-04 株式会社東芝 不揮発性半導体記憶装置
DE69231356T2 (de) * 1992-01-22 2000-12-28 Macronix Int Co Ltd Nichtflüchtige Speicherzelle und Anordnungsarchitektur
US6243293B1 (en) 1992-01-29 2001-06-05 Interuniversitair Micro-Elektronica Centrum Contacted cell array configuration for erasable and programmable semiconductor memories
US6414878B2 (en) 1992-03-17 2002-07-02 Hitachi, Ltd. Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
TW231343B (de) * 1992-03-17 1994-10-01 Hitachi Seisakusyo Kk
JP3765585B2 (ja) * 1992-08-10 2006-04-12 株式会社ルネサステクノロジ データ処理装置
US7057937B1 (en) 1992-03-17 2006-06-06 Renesas Technology Corp. Data processing apparatus having a flash memory built-in which is rewritable by use of external device
US5687345A (en) * 1992-03-17 1997-11-11 Hitachi, Ltd. Microcomputer having CPU and built-in flash memory that is rewritable under control of the CPU analyzing a command supplied from an external device
US5592415A (en) 1992-07-06 1997-01-07 Hitachi, Ltd. Non-volatile semiconductor memory
FR2703501B1 (fr) * 1993-04-01 1995-05-19 Gemplus Card Int Circuit intégré pour carte à mémoire et procédé de décomptage d'unités dans une carte à mémoire.
DE69330434T2 (de) * 1993-05-28 2002-05-02 Macronix Int Co Ltd Flash-eprom mit block-löschmarkierungen für überlöschschutz.
US5563823A (en) * 1993-08-31 1996-10-08 Macronix International Co., Ltd. Fast FLASH EPROM programming and pre-programming circuit design
JPH07201191A (ja) * 1993-12-28 1995-08-04 Toshiba Corp 不揮発性半導体メモリ装置
JP3260761B2 (ja) * 1994-09-13 2002-02-25 マクロニクス インターナショナル カンパニイ リミテッド フラッシュ・イーピーロム集積回路構造
US5646429A (en) * 1996-02-23 1997-07-08 Micron Quantum Devices, Inc. Segmented non-volatile memory array having multiple sources
TW365001B (en) * 1996-10-17 1999-07-21 Hitachi Ltd Non-volatile semiconductor memory apparatus and the operation method
EP0851426A3 (de) 1996-12-27 1999-11-24 STMicroelectronics S.r.l. Speicherblock zur Realisierung von Halbleiterspeicheranordnungen und entsprechendes Herstellungsverfahren
US5945717A (en) * 1997-03-11 1999-08-31 Micron Technology, Inc. Segmented non-volatile memory array having multiple sources
TW419812B (en) * 1998-02-18 2001-01-21 Sanyo Electric Co Non-volatile semiconductor memory
TW412861B (en) * 1998-02-27 2000-11-21 Sanyo Electric Co Non-volatile semiconductor memory
DE10008002C2 (de) * 2000-02-22 2003-04-10 X Fab Semiconductor Foundries Split-gate-Flash-Speicherelement, Anordnung von Split-gate-Flash-Speicherelementen und Methode zum Löschen derselben
US20040028559A1 (en) * 2001-11-06 2004-02-12 Peter Schuck Sample delivery system with laminar mixing for microvolume biosensing
US7839682B2 (en) * 2009-01-29 2010-11-23 Silicon Storage Technology, Inc. Array and pitch of non-volatile memory cells
US9418744B2 (en) * 2014-05-12 2016-08-16 Silicon Storage Technology, Inc. System and method to reduce disturbances during programming of flash memory cells
CN107799146B (zh) * 2016-08-31 2020-06-09 中芯国际集成电路制造(上海)有限公司 存储器阵列及其读、编程、擦除操作方法
JP2022159956A (ja) 2021-04-05 2022-10-18 キオクシア株式会社 半導体記憶装置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6025837B2 (ja) * 1978-09-14 1985-06-20 株式会社東芝 半導体記憶装置
US4366555A (en) * 1980-08-01 1982-12-28 National Semiconductor Corporation Electrically erasable programmable read only memory
DE3175125D1 (en) * 1980-11-20 1986-09-18 Toshiba Kk Semiconductor memory device and method for manufacturing the same
US4408306A (en) * 1981-09-28 1983-10-04 Motorola, Inc. Column and row erasable EEPROM
US4797856A (en) * 1987-04-16 1989-01-10 Intel Corporation Self-limiting erase scheme for EEPROM
US4970692A (en) * 1987-09-01 1990-11-13 Waferscale Integration, Inc. Circuit for controlling a flash EEPROM having three distinct modes of operation by allowing multiple functionality of a single pin
US4740766A (en) * 1987-09-04 1988-04-26 Tektronix, Inc. Precision tracking current generator
JP2685770B2 (ja) * 1987-12-28 1997-12-03 株式会社東芝 不揮発性半導体記憶装置
JPH07109701B2 (ja) * 1987-11-30 1995-11-22 株式会社東芝 キャッシュメモリ
JPH01271996A (ja) * 1988-04-22 1989-10-31 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US4949309A (en) * 1988-05-11 1990-08-14 Catalyst Semiconductor, Inc. EEPROM utilizing single transistor per cell capable of both byte erase and flash erase
JPH01296496A (ja) * 1988-05-25 1989-11-29 Mitsubishi Electric Corp 不揮発性半導体記憶装置の制御方式
US5315547A (en) * 1988-07-11 1994-05-24 Hitachi, Ltd. Nonvolatile semiconductor memory device with selective tow erasure
US5047981A (en) * 1988-07-15 1991-09-10 Texas Instruments Incorporated Bit and block erasing of an electrically erasable and programmable read-only memory array
JP2685825B2 (ja) * 1988-08-12 1997-12-03 株式会社東芝 不揮発性半導体メモリ
US5023681A (en) * 1988-10-08 1991-06-11 Hyundai Electronics Industries Co., Ltd. Method for arranging EEPROM cells and a semiconductor device manufactured by the method
ATE101752T1 (de) * 1989-03-31 1994-03-15 Philips Nv Eprom, der eine mehrfache verwendung der bitleitungskontakte ermoeglicht.
US5283758A (en) * 1989-06-13 1994-02-01 Mitsubishi Denki Kabushiki Kaisha Non-volatile semiconductor memory device
US5023837A (en) * 1989-09-05 1991-06-11 Texas Instruments Incorporated Bitline segmentation in logic arrays
US5065364A (en) * 1989-09-15 1991-11-12 Intel Corporation Apparatus for providing block erasing in a flash EPROM
US5126808A (en) * 1989-10-23 1992-06-30 Advanced Micro Devices, Inc. Flash EEPROM array with paged erase architecture
US5022008A (en) * 1989-12-14 1991-06-04 Texas Instruments Incorporated PROM speed measuring method
US5020026A (en) * 1989-12-14 1991-05-28 Texas Instruments Incorporated Method and apparatus for reading and programming electrically programmable memory cells
US5117389A (en) * 1990-09-05 1992-05-26 Macronix International Co., Ltd. Flat-cell read-only-memory integrated circuit
US5197029A (en) * 1991-02-07 1993-03-23 Texas Instruments Incorporated Common-line connection for integrated memory array

Also Published As

Publication number Publication date
DE69119277T2 (de) 1996-10-02
EP0447856B1 (de) 1996-05-08
JP2624864B2 (ja) 1997-06-25
EP0447856A1 (de) 1991-09-25
US5761119A (en) 1998-06-02
JPH03250495A (ja) 1991-11-08
US5418742A (en) 1995-05-23
KR920000079A (ko) 1992-01-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee