IL155429A0 - Stabilized alkaline compositions for cleaning microelectronic substrates - Google Patents

Stabilized alkaline compositions for cleaning microelectronic substrates

Info

Publication number
IL155429A0
IL155429A0 IL15542901A IL15542901A IL155429A0 IL 155429 A0 IL155429 A0 IL 155429A0 IL 15542901 A IL15542901 A IL 15542901A IL 15542901 A IL15542901 A IL 15542901A IL 155429 A0 IL155429 A0 IL 155429A0
Authority
IL
Israel
Prior art keywords
optionally
weight
water
alkaline compositions
metal ion
Prior art date
Application number
IL15542901A
Other languages
English (en)
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/688,559 external-priority patent/US6585825B1/en
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Publication of IL155429A0 publication Critical patent/IL155429A0/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20—Other heavy metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/22—Light metals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
IL15542901A 2000-10-16 2001-09-28 Stabilized alkaline compositions for cleaning microelectronic substrates IL155429A0 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/688,559 US6585825B1 (en) 1998-05-18 2000-10-16 Stabilized alkaline compositions for cleaning microelectronic substrates
US09/859,142 US6599370B2 (en) 2000-10-16 2001-05-16 Stabilized alkaline compositions for cleaning microelectronic substrates
PCT/US2001/042406 WO2002033033A1 (en) 2000-10-16 2001-09-28 Stabilized alkaline compositions for cleaning microelectronic substrates

Publications (1)

Publication Number Publication Date
IL155429A0 true IL155429A0 (en) 2003-11-23

Family

ID=27104249

Family Applications (1)

Application Number Title Priority Date Filing Date
IL15542901A IL155429A0 (en) 2000-10-16 2001-09-28 Stabilized alkaline compositions for cleaning microelectronic substrates

Country Status (14)

Country Link
US (1) US6599370B2 (de)
EP (1) EP1326951B1 (de)
JP (1) JP4758055B2 (de)
KR (1) KR20030051721A (de)
CN (1) CN1205325C (de)
AT (1) ATE288468T1 (de)
AU (1) AU2001296947A1 (de)
CA (1) CA2425613A1 (de)
DE (1) DE60108774T2 (de)
HK (1) HK1062310A1 (de)
IL (1) IL155429A0 (de)
MX (1) MXPA03003353A (de)
TW (1) TWI294909B (de)
WO (1) WO2002033033A1 (de)

Families Citing this family (166)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US7208049B2 (en) * 2003-10-20 2007-04-24 Air Products And Chemicals, Inc. Process solutions containing surfactants used as post-chemical mechanical planarization treatment
US7129199B2 (en) * 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
US7348300B2 (en) * 1999-05-04 2008-03-25 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture
US6653243B2 (en) * 2000-05-25 2003-11-25 Micron Technology, Inc. Methods of cleaning surfaces of copper-containing materials, and methods of forming openings to copper-containing substrates
US6855679B2 (en) * 2000-06-19 2005-02-15 Lance L. Renfrow Detergent composition and method of using same
JP2002318455A (ja) * 2001-04-23 2002-10-31 Tosoh Corp 安定化方法
MY143399A (en) 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
MY131912A (en) * 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
US6589882B2 (en) * 2001-10-24 2003-07-08 Micron Technology, Inc. Copper post-etch cleaning process
US6773873B2 (en) * 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
AU2003225178A1 (en) * 2002-04-24 2003-11-10 Ekc Technology, Inc. Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces
JP3516446B2 (ja) 2002-04-26 2004-04-05 東京応化工業株式会社 ホトレジスト剥離方法
US7252718B2 (en) * 2002-05-31 2007-08-07 Ekc Technology, Inc. Forming a passivating aluminum fluoride layer and removing same for use in semiconductor manufacture
US8003587B2 (en) * 2002-06-06 2011-08-23 Ekc Technology, Inc. Semiconductor process residue removal composition and process
BR0311827A (pt) * 2002-06-07 2005-03-29 Mallinckrodt Baker Inc Composições de limpeza microeletrÈnicas contendo oxidantes e solventes orgânicos
BR0311830A (pt) 2002-06-07 2005-03-29 Mallinckrodt Baker Inc Composições removedoras de arco e de limpeza de microeletrÈnicos
US7393819B2 (en) * 2002-07-08 2008-07-01 Mallinckrodt Baker, Inc. Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
JP4443864B2 (ja) 2002-07-12 2010-03-31 株式会社ルネサステクノロジ レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法
DE10331033B4 (de) * 2002-07-12 2010-04-29 Ekc Technology K.K. R&D Business Park Bldg. D-3F, Kawasaki Herstellungsverfahren einer Halbleitervorrichtung und Reinigungszusammensetzung dafür
US20040050406A1 (en) * 2002-07-17 2004-03-18 Akshey Sehgal Compositions and method for removing photoresist and/or resist residue at pressures ranging from ambient to supercritical
US6641986B1 (en) * 2002-08-12 2003-11-04 Air Products And Chemicals, Inc. Acetylenic diol surfactant solutions and methods of using same
KR20050084917A (ko) 2002-10-22 2005-08-29 이케이씨 테크놀로지, 인코포레이티드 반도체 장치 세정용 수성 인산 조성물
ATE521692T1 (de) * 2002-11-05 2011-09-15 Basf Se Halbleiteroberflächenbehandlung und dabei verwendete mischung
JP4752270B2 (ja) * 2002-11-08 2011-08-17 和光純薬工業株式会社 洗浄液及びそれを用いた洗浄方法
US7481949B2 (en) * 2002-11-08 2009-01-27 Wako Pure Chemical Industries, Ltd Polishing composition and rinsing composition
US6803353B2 (en) * 2002-11-12 2004-10-12 Atofina Chemicals, Inc. Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
US7459005B2 (en) * 2002-11-22 2008-12-02 Akzo Nobel N.V. Chemical composition and method
US8236485B2 (en) * 2002-12-20 2012-08-07 Advanced Technology Materials, Inc. Photoresist removal
SG129274A1 (en) * 2003-02-19 2007-02-26 Mitsubishi Gas Chemical Co Cleaaning solution and cleaning process using the solution
US20040220066A1 (en) * 2003-05-01 2004-11-04 Rohm And Haas Electronic Materials, L.L.C. Stripper
JP3828511B2 (ja) * 2003-06-26 2006-10-04 株式会社東芝 半導体装置の製造方法
WO2005001016A1 (en) * 2003-06-27 2005-01-06 Interuniversitair Microelektronica Centrum (Imec) Semiconductor cleaning solution
US7306663B2 (en) * 2003-08-05 2007-12-11 Halox, Division Of Hammond Group, Inc. Corrosion inhibitor
CN1839355B (zh) * 2003-08-19 2012-07-11 安万托特性材料股份有限公司 用于微电子设备的剥离和清洁组合物
US20050049162A1 (en) * 2003-08-29 2005-03-03 Schlosser Ted M. Petroleum-free, ammonia-free cleaner for firearms and ordnance
TWI362415B (en) 2003-10-27 2012-04-21 Wako Pure Chem Ind Ltd Novel detergent and method for cleaning
CN1875325B (zh) * 2003-10-29 2011-01-26 马林克罗特贝克公司 含有金属卤化物腐蚀抑制剂的碱性后等离子体蚀刻/灰化残余物去除剂和光致抗蚀剂剥离组合物
US7432233B2 (en) * 2003-12-18 2008-10-07 Interuniversitair Microelektronica Centrum (Imec) Composition and method for treating a semiconductor substrate
KR101166002B1 (ko) 2004-02-09 2012-07-18 미쓰비시 가가꾸 가부시키가이샤 반도체 디바이스용 기판 세정액 및 세정방법
US7498295B2 (en) * 2004-02-12 2009-03-03 Air Liquide Electronics U.S. Lp Alkaline chemistry for post-CMP cleaning comprising tetra alkyl ammonium hydroxide
US8338087B2 (en) * 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
US20050227482A1 (en) * 2004-03-24 2005-10-13 Korzenski Michael B Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers
DE102004017440A1 (de) * 2004-04-08 2005-11-03 Enthone Inc., West Haven Verfahren zur Behandlung von laserstrukturierten Kunststoffoberflächen
KR100585139B1 (ko) * 2004-04-12 2006-05-30 삼성전자주식회사 웨이퍼 세정액의 금속 측정 시약과 웨이퍼 세정액의 금속오염 모니터링 장치 및 방법
JP4369284B2 (ja) * 2004-04-19 2009-11-18 東友ファインケム株式会社 レジスト剥離剤
CN1950755B (zh) * 2004-05-07 2011-05-11 株式会社东进世美肯 用于去除光刻胶的组合物
KR101082018B1 (ko) * 2004-05-07 2011-11-10 주식회사 동진쎄미켐 레지스트 제거용 조성물
WO2006025373A1 (ja) 2004-08-31 2006-03-09 Sanyo Chemical Industries, Ltd. 界面活性剤
JP4628209B2 (ja) * 2004-11-18 2011-02-09 花王株式会社 剥離剤組成物
PT1828848E (pt) * 2004-12-10 2010-05-21 Mallinckrodt Baker Inc Composições de limpeza para microelectrónica, não aquosas e não corrosivas, contendo inibidores da corrosão poliméricos
US20060154186A1 (en) * 2005-01-07 2006-07-13 Advanced Technology Materials, Inc. Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
JP5600376B2 (ja) * 2005-01-27 2014-10-01 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 半導体基材の処理のための組成物
US7727949B2 (en) * 2005-03-04 2010-06-01 Wako Pure Chemical Industries, Ltd. Cleaning agent for thermostatic chambers
US20090288688A1 (en) * 2005-03-11 2009-11-26 Ron Rulkens Non-corrosive chemical rinse system
CN101248516A (zh) * 2005-04-08 2008-08-20 塞克姆公司 金属氮化物的选择性湿蚀刻
US20070251551A1 (en) * 2005-04-15 2007-11-01 Korzenski Michael B Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems
KR20070121845A (ko) * 2005-04-15 2007-12-27 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 용매계 내 자기 조립 단층을 이용한 고용량 이온 주입포토레지스트의 제거
US20060280860A1 (en) * 2005-06-09 2006-12-14 Enthone Inc. Cobalt electroless plating in microelectronic devices
US7316977B2 (en) * 2005-08-24 2008-01-08 Air Products And Chemicals, Inc. Chemical-mechanical planarization composition having ketooxime compounds and associated method for use
KR101444468B1 (ko) 2005-10-05 2014-10-30 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 에칭후 잔류물을 제거하기 위한 산화성 수성 세정제
KR20080059442A (ko) * 2005-10-13 2008-06-27 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속 상용성 포토레지스트 및/또는 희생 반사방지 코팅제거 조성물
CN100526448C (zh) * 2005-11-03 2009-08-12 比亚迪股份有限公司 一种边胶清洗剂
US7367343B2 (en) 2006-01-23 2008-05-06 Micron Technology, Inc. Method of cleaning a surface of a cobalt-containing material, method of forming an opening to a cobalt-containing material, semiconductor processing method of forming an integrated circuit comprising a copper-containing conductive line, and a cobalt-containing film cleaning solution
TW200734448A (en) * 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
TWI417683B (zh) * 2006-02-15 2013-12-01 Avantor Performance Mat Inc 用於微電子基板之穩定化，非水性清潔組合物
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
KR100729235B1 (ko) * 2006-06-01 2007-06-15 삼성전자주식회사 프로브 카드용 세정액 조성물 및 이를 이용한 프로브카드의 세정 방법
US8325894B2 (en) * 2006-08-03 2012-12-04 International Business Machines Corporation Method, system, and program product for managing conference calls
JP4864617B2 (ja) * 2006-09-21 2012-02-01 株式会社東芝 洗浄液及びノズルプレート洗浄方法
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
US8685909B2 (en) * 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
SG175559A1 (en) * 2006-09-25 2011-11-28 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
CN101201557A (zh) * 2006-12-15 2008-06-18 安集微电子（上海）有限公司 清洗厚膜光刻胶的清洗剂
US8699684B2 (en) 2006-12-20 2014-04-15 International Business Machines Corporation Method, system, and program product for contacting conference call participants
US20100163788A1 (en) * 2006-12-21 2010-07-01 Advanced Technology Materials, Inc. Liquid cleaner for the removal of post-etch residues
TWI562234B (en) * 2006-12-21 2016-12-11 Entegris Inc Compositions and methods for the selective removal of silicon nitride
MY145938A (en) * 2007-02-14 2012-05-31 Avantor Performance Mat Inc Peroxide activated oxometalate based formulations for removal of etch residue
TW200842970A (en) * 2007-04-26 2008-11-01 Mallinckrodt Baker Inc Polysilicon planarization solution for planarizing low temperature poly-silicon thin filim panels
TWI454574B (zh) * 2007-05-17 2014-10-01 Advanced Tech Materials 用於化學機械研磨後（ｐｏｓｔ－ＣＭＰ）清洗配方之新穎抗氧化劑
US7976723B2 (en) * 2007-05-17 2011-07-12 International Business Machines Corporation Method for kinetically controlled etching of copper
JP5142592B2 (ja) * 2007-06-06 2013-02-13 関東化学株式会社 基板の洗浄またはエッチングに用いられるアルカリ性水溶液組成物
KR20100051839A (ko) * 2007-08-02 2010-05-18 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 마이크로전자 장치로부터 잔사를 제거하기 위한 플루오라이드 비-함유 조성물
US20090120457A1 (en) * 2007-11-09 2009-05-14 Surface Chemistry Discoveries, Inc. Compositions and method for removing coatings and preparation of surfaces for use in metal finishing, and manufacturing of electronic and microelectronic devices
ES2386692T3 (es) 2007-11-13 2012-08-27 Sachem, Inc. Composición de silsesquioxano poliédrico con potencial zeta negativo elevado y método para la limpieza húmeda de semiconductores sin daños
US8404626B2 (en) * 2007-12-21 2013-03-26 Lam Research Corporation Post-deposition cleaning methods and formulations for substrates with cap layers
CN101226346B (zh) * 2007-12-27 2010-06-09 周伟 光致抗蚀剂的脱膜工艺及在该工艺中使用的第一组合物、第二组合物和脱膜剂水溶液
JP4278705B1 (ja) * 2008-01-16 2009-06-17 メック株式会社 エッチング液
JP2010034178A (ja) * 2008-07-28 2010-02-12 Mitsubishi Gas Chemical Co Inc シリコンエッチング液およびエッチング方法
JP5873718B2 (ja) * 2008-10-21 2016-03-01 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅の洗浄及び保護配合物
US7700535B1 (en) * 2009-01-12 2010-04-20 Ppt Research Wafer/Ingot cleaning in wire saw cutting comprising an ethoxylated alcohol/polyalkylsiloxane mixture
WO2010091045A2 (en) * 2009-02-05 2010-08-12 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of polymers and other organic material from a surface
AU2010218275A1 (en) * 2009-02-25 2011-10-20 Avantor Performance Materials, Inc. Stripping compositions for cleaning ion implanted photoresist from semiconductor device wafers
US8309502B2 (en) * 2009-03-27 2012-11-13 Eastman Chemical Company Compositions and methods for removing organic substances
US8614053B2 (en) 2009-03-27 2013-12-24 Eastman Chemical Company Processess and compositions for removing substances from substrates
US8444768B2 (en) 2009-03-27 2013-05-21 Eastman Chemical Company Compositions and methods for removing organic substances
WO2010119753A1 (ja) * 2009-04-17 2010-10-21 ナガセケムテックス株式会社 フォトレジスト剥離剤組成物及びフォトレジスト剥離方法
JP5431014B2 (ja) * 2009-05-01 2014-03-05 関東化学株式会社 しゅう酸インジウム溶解剤組成物
US8765653B2 (en) * 2009-07-07 2014-07-01 Air Products And Chemicals, Inc. Formulations and method for post-CMP cleaning
US8518865B2 (en) * 2009-08-31 2013-08-27 Air Products And Chemicals, Inc. Water-rich stripping and cleaning formulation and method for using same
EP2312618B1 (de) 2009-10-14 2016-02-10 Rohm and Haas Electronic Materials LLC Verfahren zur Reinigung und Mikroätzung von Halbleiter-Wafern
TW201140254A (en) * 2009-12-11 2011-11-16 Advanced Tech Materials Removal of masking material
US8367555B2 (en) * 2009-12-11 2013-02-05 International Business Machines Corporation Removal of masking material
CN102134529B (zh) * 2010-01-21 2012-11-28 奇美实业股份有限公司 用于清洗太阳能电池基板的洗净液组成物
WO2011094568A2 (en) * 2010-01-29 2011-08-04 Advanced Technology Materials, Inc. Cleaning agent for semiconductor provided with metal wiring
KR101829399B1 (ko) * 2010-03-04 2018-03-30 삼성전자주식회사 감광성 수지 제거제 조성물 및 이를 이용하는 반도체 제조 공정
SG186108A1 (en) 2010-06-09 2013-01-30 Basf Se Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates
US9063431B2 (en) 2010-07-16 2015-06-23 Advanced Technology Materials, Inc. Aqueous cleaner for the removal of post-etch residues
CN103003405B (zh) * 2010-07-19 2016-04-13 巴斯夫欧洲公司 含水碱性清洁组合物及其应用方法
CN101937687A (zh) * 2010-07-21 2011-01-05 河北工业大学 计算机硬盘磷化铟基片cmp后表面洁净方法
JP5591623B2 (ja) * 2010-08-13 2014-09-17 ＡｚエレクトロニックマテリアルズＩｐ株式会社 リソグラフィー用リンス液およびそれを用いたパターン形成方法
JP6101421B2 (ja) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
DE102011050136A1 (de) 2010-09-03 2012-03-08 Schott Solar Ag Verfahren zum nasschemischen Ätzen einer Siliziumschicht
US20120073607A1 (en) * 2010-09-27 2012-03-29 Eastman Chemical Company Polymeric or monomeric compositions comprising at least one mono-amide and/or at least one diamide for removing substances from substrates and methods for using the same
KR102064487B1 (ko) 2011-01-13 2020-01-10 엔테그리스, 아이엔씨. 세륨-함유 용액에 의해 발생된 입자의 제거를 위한 배합물
US8889609B2 (en) 2011-03-16 2014-11-18 Air Products And Chemicals, Inc. Cleaning formulations and method of using the cleaning formulations
EP2729845B1 (de) * 2011-07-08 2019-09-04 Heraeus Deutschland GmbH & Co. KG Verfahren zur herstellung eines schichtkörpers
EP2557147B1 (de) 2011-08-09 2015-04-01 Basf Se Wässrige basische Lösung und Verfahren zur Behandlung der Oberfläche von Siliziumsubstraten
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅または銅合金用エッチング液
CN102411269A (zh) * 2011-11-18 2012-04-11 西安东旺精细化学有限公司 光致抗蚀剂膜的剥离液组合物
JP6066552B2 (ja) * 2011-12-06 2017-01-25 関東化學株式会社 電子デバイス用洗浄液組成物
KR102102792B1 (ko) 2011-12-28 2020-05-29 엔테그리스, 아이엔씨. 티타늄 나이트라이드의 선택적인 에칭을 위한 조성물 및 방법
SG11201404930SA (en) * 2012-02-15 2014-09-26 Advanced Tech Materials Post-cmp removal using compositions and method of use
JP2015517691A (ja) 2012-05-18 2015-06-22 インテグリス，インコーポレイテッド 窒化チタンを含む表面からフォトレジストを剥離するための組成物およびプロセス
JP2014170927A (ja) * 2013-02-06 2014-09-18 Mitsubishi Chemicals Corp 半導体デバイス用基板洗浄液及び半導体デバイス用基板の洗浄方法
JP6203525B2 (ja) * 2013-04-19 2017-09-27 関東化學株式会社 洗浄液組成物
TW201500542A (zh) * 2013-04-22 2015-01-01 Advanced Tech Materials 銅清洗及保護配方
US20160122696A1 (en) * 2013-05-17 2016-05-05 Advanced Technology Materials, Inc. Compositions and methods for removing ceria particles from a surface
CN103676503A (zh) * 2013-09-24 2014-03-26 刘超 光刻胶剥离剂组合物
CN103513521A (zh) * 2013-09-24 2014-01-15 刘超 负型光刻胶剥离剂组合物
US9291910B2 (en) * 2013-09-27 2016-03-22 Dynaloy, Llc Aqueous solution and process for removing substances from substrates
US20150104952A1 (en) * 2013-10-11 2015-04-16 Ekc Technology, Inc. Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper
CN103509657A (zh) * 2013-10-17 2014-01-15 太仓康茂电子有限公司 零部件表面清洁方法
SG11201603122XA (en) * 2013-10-21 2016-05-30 Fujifilm Electronic Materials Cleaning formulations for removing residues on surfaces
CN105873691B (zh) 2013-12-06 2018-04-20 富士胶片电子材料美国有限公司 用于去除表面上的残余物的清洗调配物
CN103806009A (zh) * 2013-12-16 2014-05-21 许桂顺 一种中性硫酸盐清洗剂
US11127587B2 (en) * 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
US9957469B2 (en) * 2014-07-14 2018-05-01 Versum Materials Us, Llc Copper corrosion inhibition system
CN106999945B (zh) 2014-08-19 2019-03-12 吉欧科技聚合物有限责任公司 涂层去除系统
JP6486652B2 (ja) * 2014-10-31 2019-03-20 東京応化工業株式会社 リソグラフィー用洗浄液、及び基板の洗浄方法
JP6501492B2 (ja) 2014-10-31 2019-04-17 関東化學株式会社 フォトレジスト残渣および／またはポリマー残渣を除去するための組成物
CN104570629B (zh) * 2015-02-14 2016-04-13 江阴江化微电子材料股份有限公司 —种液晶面板铜膜光阻水系剥离液
US9976111B2 (en) * 2015-05-01 2018-05-22 Versum Materials Us, Llc TiN hard mask and etch residual removal
KR102183400B1 (ko) * 2015-06-23 2020-11-26 주식회사 이엔에프테크놀로지 세정액 조성물
WO2017070366A1 (en) 2015-10-20 2017-04-27 Geo-Tech Polymers, Llc Recycling of fibrous surface coverings
KR20170111411A (ko) * 2016-03-28 2017-10-12 동우 화인켐 주식회사 레지스트 박리액 조성물, 및 디스플레이 장치용 플랫 패널의 제조방법 및 그에 의해 제조된 디스플레이 장치용 플랫 패널, 및 디스플레이 장치
US10073352B2 (en) 2016-04-12 2018-09-11 Versum Materials Us, Llc Aqueous solution and process for removing substances from substrates
KR102372109B1 (ko) * 2017-01-17 2022-03-08 엔테그리스, 아이엔씨. 첨단 노드 beol 공정을 위한 에칭-후 잔류물 제거
KR101789251B1 (ko) * 2017-03-17 2017-10-26 영창케미칼 주식회사 화학적 기계적 연마 후 세정용 조성물
CN107026120B (zh) * 2017-03-30 2019-07-23 深圳市华星光电半导体显示技术有限公司 一种阵列基板的制作方法
CN107338126A (zh) * 2017-06-23 2017-11-10 昆山欣谷微电子材料有限公司 一种水基微电子剥离和清洗液组合物
US10934485B2 (en) * 2017-08-25 2021-03-02 Versum Materials Us, Llc Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device
CN111837218A (zh) * 2018-03-14 2020-10-27 三菱瓦斯化学株式会社 用于去除干蚀刻残渣的清洗液及使用其的半导体基板的制造方法
EP3774680A4 (de) 2018-03-28 2021-05-19 FUJIFILM Electronic Materials U.S.A, Inc. Reinigungszusammensetzungen
US11742196B2 (en) * 2018-05-24 2023-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for metallic deionization
US11085011B2 (en) * 2018-08-28 2021-08-10 Entegris, Inc. Post CMP cleaning compositions for ceria particles
US11180697B2 (en) * 2018-11-19 2021-11-23 Versum Materials Us, Llc Etching solution having silicon oxide corrosion inhibitor and method of using the same
JP7305679B2 (ja) * 2018-12-18 2023-07-10 株式会社トクヤマ シリコンエッチング液
CN113614646A (zh) * 2019-03-25 2021-11-05 松下知识产权经营株式会社 抗蚀剂剥离液
CN115428129A (zh) * 2020-04-14 2022-12-02 三菱瓦斯化学株式会社 钛和/或钛合金的蚀刻液、使用该蚀刻液的钛和/或钛合金的蚀刻方法、以及使用该蚀刻液的基板的制造方法
CN113201743B (zh) * 2021-04-08 2022-06-21 浙江工业大学 一种适用于电子器件的除锈剂及其制备方法
EP4282945A3 (de) * 2022-05-27 2024-03-13 Samsung Electronics Co., Ltd. Reinigungsmittel, verfahren zur reinigung metallhaltiger filme und verfahren zur herstellung von halbleitern
CN115074734B (zh) * 2022-08-22 2022-11-08 深圳市板明科技股份有限公司 一种铝基材线路板用减铜添加剂及其制备方法和使用方法
CN116144362B (zh) * 2023-03-13 2023-11-21 大连奥首科技有限公司 一种无醇型单晶硅快速制绒添加剂、及包含其的制绒液、其制备方法及用途

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4443295A (en) 1983-06-13 1984-04-17 Fairchild Camera & Instrument Corp. Method of etching refractory metal film on semiconductor structures utilizing triethylamine and H2 O2
EP0496605B1 (de) * 1991-01-24 2001-08-01 Wako Pure Chemical Industries Ltd Lösungen zur Oberflächenbehandlung von Halbleitern
US5753601A (en) * 1991-01-25 1998-05-19 Ashland Inc Organic stripping composition
US5139607A (en) * 1991-04-23 1992-08-18 Act, Inc. Alkaline stripping compositions
US5308745A (en) * 1992-11-06 1994-05-03 J. T. Baker Inc. Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins
US5466389A (en) * 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
US5498293A (en) * 1994-06-23 1996-03-12 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
JP2911792B2 (ja) * 1995-09-29 1999-06-23 東京応化工業株式会社 レジスト用剥離液組成物
US6121127A (en) 1996-06-14 2000-09-19 Toyoda Gosei Co., Ltd. Methods and devices related to electrodes for p-type group III nitride compound semiconductors
DE69734868T2 (de) * 1996-07-25 2006-08-03 Dupont Air Products Nanomaterials L.L.C., Tempe Zusammensetzung und verfahren zum chemisch-mechanischen polieren
US5817610A (en) * 1996-09-06 1998-10-06 Olin Microelectronic Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US6268323B1 (en) * 1997-05-05 2001-07-31 Arch Specialty Chemicals, Inc. Non-corrosive stripping and cleaning composition
US6130195A (en) 1997-11-03 2000-10-10 Kyzen Corporation Cleaning compositions and methods for cleaning using cyclic ethers and alkoxy methyl butanols
DE69941088D1 (de) * 1998-05-18 2009-08-20 Mallinckrodt Baker Inc Alkalische, silikat enthaltende reinigungslösungen für mikroelektronische substrate

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