CN101201557A - 清洗厚膜光刻胶的清洗剂 - Google Patents
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 25
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- -1 alkyl glycol monophenyl ether Chemical compound 0.000 claims abstract description 8
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 claims description 18
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- 125000000217 alkyl group Chemical group 0.000 claims description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 6
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- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
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- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- CIBMHJPPKCXONB-UHFFFAOYSA-N propane-2,2-diol Chemical compound CC(C)(O)O CIBMHJPPKCXONB-UHFFFAOYSA-N 0.000 claims description 3
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- 229940102253 isopropanolamine Drugs 0.000 claims description 2
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- 238000004519 manufacturing process Methods 0.000 description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 229910021641 deionized water Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- BJFLSHMHTPAZHO-UHFFFAOYSA-N benzotriazole Chemical compound [CH]1C=CC=C2N=NN=C21 BJFLSHMHTPAZHO-UHFFFAOYSA-N 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/263—Ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
- C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
- C23G5/028—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing halogenated hydrocarbons
- C23G5/02854—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing halogenated hydrocarbons characterised by the stabilising or corrosion inhibiting additives
- C23G5/02893—Sulfur-containing compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
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- C11D2111/22—
Abstract
本发明公开了一种清洗厚膜光刻胶的清洗剂。这种光刻胶清洗剂含有二甲基亚砜、氢氧化钾、烷基醇胺和烷基二醇单苯基醚。本发明的清洗剂可以除去金属、金属合金或电介质基材上的100μm以上厚度的厚膜光刻胶(光阻),在半导体晶片清洗等微电子领域具有良好的应用前景。
Description
技术领域
本发明涉及一种清洗厚膜光刻胶的清洗剂。
背景技术
在通常的半导体制造工艺中,通过在二氧化硅、Cu(铜)等金属以及低k材料等表面上形成光刻胶的掩模,曝光后利用湿法或干法刻蚀进行图形转移。100μm以上的厚膜光刻胶越来越多地应用于半导体晶片制造工艺中,因而用于清洗厚膜光刻胶的清洗剂日益成为半导体晶片制造工艺的重要研究方向。另外,在半导体晶片进行光刻胶的化学清洗过程中,清洗剂常会造成晶片基材的腐蚀。特别是在利用化学清洗剂除去金属刻蚀残余物的过程中,金属腐蚀是较为普遍而且非常严重的问题,往往导致晶片良率的显著降低。
目前,光刻胶清洗剂主要由极性有机溶剂、强碱和/或水等组成,通过将半导体晶片浸入清洗剂中或者利用清洗剂冲洗半导体晶片,去除半导体晶片上的光刻胶。
专利文献JP1998239865公开了一种碱性清洗剂,由四甲基氢氧化铵TMAH、二甲基亚砜(DMSO)、1,3’-二甲基-2-咪唑烷酮(DMI)和水等组成。将晶片浸入该清洗剂中,于50~100℃下除去金属和电介质基材上的20μm以上的厚膜光刻胶。该清洗剂对半导体晶片基材的腐蚀略高,且不能完全去除半导体晶片的光刻胶,清洗能力不足。
专利文献US5529887公开了一种碱性清洗剂,由氢氧化钾、烷基二醇单烷基醚、水溶性氟化物和水等组成。将晶片浸入该清洗剂中,在40~90℃下除去金属和电介质基材上的厚膜光刻胶。该清洗剂对半导体晶片基材的腐蚀较高。
专利文献US5962197公开了一种碱性清洗剂,由氢氧化钾、N-甲基吡咯烷酮、丙二醇醚、水和表面活性剂等组成。将晶片浸入该清洗剂中,于105℃下浸没40min,可除去金属和电介质基材上的厚膜光刻胶。该清洗剂需要在105℃下使用,其清洗温度较高,会造成半导体晶片基材的腐蚀。
本发明中的光刻胶清洗剂,可以在50~70℃下清洗100μm以上厚度的光刻胶。将含有光刻胶的半导体晶片浸入本发明中的光刻胶清洗剂,在50~70℃下,用恒温振荡器缓慢振荡30~120分钟,再用去离子水洗涤,之后用高纯氮气吹干。
发明内容
本发明的目的是公开一种清洗厚膜光刻胶的清洗剂。
本发明的清洗剂含有:二甲基亚砜(DMSO)、氢氧化钾、烷基醇胺和烷基二醇单苯基醚。
本发明中,所述的二甲基亚砜的含量较佳的为质量百分比35~95%,更佳的为质量百分比60~95%;所述的氢氧化钾的含量较佳的为质量百分比0.1~5%,更佳的为质量百分比0.5~3%;所述的烷基醇胺的含量较佳的为质量百分比0.1~20%,更佳的为质量百分比0.5~10%;所述的烷基二醇单苯基醚的含量较佳的为质量百分比1~40%,更佳的为质量百分比5~25%。
本发明中,所述的烷基醇胺较佳的为单乙醇胺(MEA)、二乙醇胺(DEA)、三乙醇胺(TEA)或异丙醇胺。其中,优选单乙醇胺。
本发明中,所述的烷基二醇单苯基醚较佳的为乙二醇单苯基醚(EGMPE)、丙二醇单苯基醚(PGMPE)、异丙二醇单苯基醚、二乙二醇单苯基醚、二丙二醇单苯基醚或二异丙二醇单苯基醚。其中,优选乙二醇单苯基醚、丙二醇单苯基醚或异丙二醇单苯基醚。
本发明中,所述的清洗剂还可含有缓蚀剂。所述的缓蚀剂较佳的为苯并三氮唑(BTA)、2-巯基苯并噁唑(MBO)或2-巯基苯并噻唑(MBT)。其中,优选2-巯基苯并噻唑。所述的缓蚀剂的含量较佳的为小于或等于质量百分比5%,更佳的为质量百分比0.05~2%。
本发明的清洗剂由上述组分混合均匀,即可制得。
本发明的积极进步效果在于:本发明的清洗剂可以除去金属、金属合金或电介质基材上的100μm以上厚度的厚膜光刻胶(光阻),在半导体晶片清洗等微电子领域具有良好的应用前景。
具体实施方式
下面通过实施例的方式进一步说明本发明,但并不因此将本发明限制在所述的实施例范围之中。
实施例1~6清洗厚膜光刻胶的清洗剂
表1给出了清洗厚膜光刻胶的清洗剂实施例1~6的配方,按表1中所列组分及其含量,简单混合均匀,即制得各实施例的清洗剂。
表1清洗厚膜光刻胶的清洗剂实施例1~6
效果实施例
表2给出了清洗剂1~6的配方,按表2中所列组分及其含量,简单混合均匀,即制得各清洗剂。
表2清洗厚膜光刻胶的清洗剂1~6
将清洗剂1~6用于清洗空白Cu晶片和含有100μm以上厚度的光刻胶的晶片,测试其对金属Cu的腐蚀性及其对厚膜光刻胶的清洗能力,结果如表3所示。
清洗方法为:将空白Cu晶片和含有100μm以上厚度的光刻胶的晶片浸入光刻胶清洗剂,50~70℃下用恒温振荡器缓慢振荡30~120分钟,再用去离子水洗涤,之后用高纯氮气吹干。
表3清洗剂1~6对金属Cu的腐蚀性及其对厚膜光刻胶的清洗能力
从表3可以看出,清洗剂1~6表现出对金属Cu的低腐蚀性以及对厚膜光刻胶良好的清洗能力。
本发明所用试剂均市售可得。
Claims (15)
1.一种清洗厚膜光刻胶的清洗剂,其特征在于含有:二甲基亚砜、氢氧化钾、烷基醇胺和烷基二醇单苯基醚。
2.如权利要求1所述的清洗剂,其特征在于:所述的二甲基亚砜的含量为质量百分比35~95%。
3.如权利要求2所述的清洗剂,其特征在于:所述的含量为质量百分比60~95%。
4.如权利要求1所述的清洗剂,其特征在于:所述的氢氧化钾的含量为质量百分比0.1~5%。
5.如权利要求4所述的清洗剂,其特征在于:所述的含量为质量百分比0.5~3%。
6.如权利要求1所述的清洗剂,其特征在于:所述的烷基醇胺的含量为质量百分比0.1~20%。
7.如权利要求6所述的清洗剂,其特征在于:所述的含量为质量百分比0.5~10%。
8.如权利要求1所述的清洗剂,其特征在于:所述的烷基二醇单苯基醚的含量为质量百分比1~40%。
9.如权利要求8所述的清洗剂,其特征在于:所述的含量为质量百分比5~25%。
10.如权利要求1所述的清洗剂,其特征在于:所述的烷基醇胺为单乙醇胺、二乙醇胺、三乙醇胺或异丙醇胺。
11.如权利要求1所述的清洗剂,其特征在于:所述的烷基二醇单苯基醚为乙二醇单苯基醚、丙二醇单苯基醚、异丙二醇单苯基醚、二乙二醇单苯基醚、二丙二醇单苯基醚或二异丙二醇单苯基醚。
12.如权利要求1所述的清洗剂,其特征在于:所述的清洗剂还含有缓蚀剂。
13.如权利要求12所述的清洗剂,其特征在于:所述的缓蚀剂的含量为小于或等于质量百分比5%。
14.如权利要求13所述的清洗剂,其特征在于:所述的含量为质量百分比0.05~2%。
15.如权利要求12所述的清洗剂,其特征在于:所述的缓蚀剂为苯并三氮唑、2-巯基苯并噁唑或2-巯基苯并噻唑。
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Application Number | Priority Date | Filing Date | Title |
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CNA200610147346XA CN101201557A (zh) | 2006-12-15 | 2006-12-15 | 清洗厚膜光刻胶的清洗剂 |
PCT/CN2007/003518 WO2008071077A1 (fr) | 2006-12-15 | 2007-12-10 | Composé nettoyant pour éliminer un photorésist |
CN200780044774.2A CN101548242B (zh) | 2006-12-15 | 2007-12-10 | 清洗厚膜光刻胶的清洗剂 |
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CN200780044774.2A Expired - Fee Related CN101548242B (zh) | 2006-12-15 | 2007-12-10 | 清洗厚膜光刻胶的清洗剂 |
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Cited By (9)
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WO2010051689A1 (zh) * | 2008-11-10 | 2010-05-14 | 安集微电子(上海)有限公司 | 一种厚膜光刻胶清洗剂 |
CN102096345A (zh) * | 2009-12-11 | 2011-06-15 | 安集微电子(上海)有限公司 | 一种厚膜光刻胶清洗液及其清洗方法 |
CN103789780A (zh) * | 2014-02-26 | 2014-05-14 | 苏州禾川化学技术服务有限公司 | 一种ic元件用碱性通用型去毛刺液 |
CN102051283B (zh) * | 2009-10-30 | 2014-11-05 | 安集微电子(上海)有限公司 | 一种含羟胺的清洗液及其应用 |
CN104531397A (zh) * | 2014-11-18 | 2015-04-22 | 惠晶显示科技(苏州)有限公司 | 一种平板玻璃基板减薄预清洗用清洗液及其应用 |
CN104877811A (zh) * | 2014-02-27 | 2015-09-02 | 荒川化学工业株式会社 | 清洗剂组合物原液、清洗剂组合物、清洗方法以及用途 |
CN105467783A (zh) * | 2016-01-04 | 2016-04-06 | 仲恺农业工程学院 | 一种碱性感光聚合显影分泌物清洗剂及其制备方法 |
CN105676600A (zh) * | 2016-04-06 | 2016-06-15 | 东莞市广华化工有限公司 | 防腐蚀碱性显影液 |
CN105676599A (zh) * | 2016-04-06 | 2016-06-15 | 东莞市广华化工有限公司 | 基于新聚合物及应用于图像显影技术的显影液 |
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CN103436898B (zh) * | 2013-07-22 | 2016-04-06 | 武汉亿强科技开发有限公司 | 一种酸洗缓蚀抑雾剂及其制备方法 |
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US6828289B2 (en) * | 1999-01-27 | 2004-12-07 | Air Products And Chemicals, Inc. | Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature |
US6599370B2 (en) * | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
KR101017738B1 (ko) * | 2002-03-12 | 2011-02-28 | 미츠비시 가스 가가쿠 가부시키가이샤 | 포토레지스트 박리제 조성물 및 세정 조성물 |
KR101043397B1 (ko) * | 2003-07-10 | 2011-06-22 | 주식회사 동진쎄미켐 | 티에프티 엘시디 제조 공정의 칼라 레지스트 제거용박리액 조성물 |
-
2006
- 2006-12-15 CN CNA200610147346XA patent/CN101201557A/zh active Pending
-
2007
- 2007-12-10 CN CN200780044774.2A patent/CN101548242B/zh not_active Expired - Fee Related
- 2007-12-10 WO PCT/CN2007/003518 patent/WO2008071077A1/zh active Application Filing
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WO2010051689A1 (zh) * | 2008-11-10 | 2010-05-14 | 安集微电子(上海)有限公司 | 一种厚膜光刻胶清洗剂 |
CN102051283B (zh) * | 2009-10-30 | 2014-11-05 | 安集微电子(上海)有限公司 | 一种含羟胺的清洗液及其应用 |
CN102096345A (zh) * | 2009-12-11 | 2011-06-15 | 安集微电子(上海)有限公司 | 一种厚膜光刻胶清洗液及其清洗方法 |
CN103789780A (zh) * | 2014-02-26 | 2014-05-14 | 苏州禾川化学技术服务有限公司 | 一种ic元件用碱性通用型去毛刺液 |
CN104877811A (zh) * | 2014-02-27 | 2015-09-02 | 荒川化学工业株式会社 | 清洗剂组合物原液、清洗剂组合物、清洗方法以及用途 |
CN104877811B (zh) * | 2014-02-27 | 2019-06-07 | 荒川化学工业株式会社 | 清洗剂组合物原液、清洗剂组合物、清洗方法以及用途 |
CN104531397A (zh) * | 2014-11-18 | 2015-04-22 | 惠晶显示科技(苏州)有限公司 | 一种平板玻璃基板减薄预清洗用清洗液及其应用 |
CN105467783A (zh) * | 2016-01-04 | 2016-04-06 | 仲恺农业工程学院 | 一种碱性感光聚合显影分泌物清洗剂及其制备方法 |
CN105676600A (zh) * | 2016-04-06 | 2016-06-15 | 东莞市广华化工有限公司 | 防腐蚀碱性显影液 |
CN105676599A (zh) * | 2016-04-06 | 2016-06-15 | 东莞市广华化工有限公司 | 基于新聚合物及应用于图像显影技术的显影液 |
Also Published As
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WO2008071077A1 (fr) | 2008-06-19 |
CN101548242B (zh) | 2013-07-10 |
CN101548242A (zh) | 2009-09-30 |
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