KR100544889B1 - 포토레지스트용 스트리퍼 조성물 - Google Patents
포토레지스트용 스트리퍼 조성물 Download PDFInfo
- Publication number
- KR100544889B1 KR100544889B1 KR1020030030987A KR20030030987A KR100544889B1 KR 100544889 B1 KR100544889 B1 KR 100544889B1 KR 1020030030987 A KR1020030030987 A KR 1020030030987A KR 20030030987 A KR20030030987 A KR 20030030987A KR 100544889 B1 KR100544889 B1 KR 100544889B1
- Authority
- KR
- South Korea
- Prior art keywords
- photoresist
- stripper composition
- weight
- group
- stripper
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 96
- 239000000203 mixture Substances 0.000 title claims abstract description 83
- 230000007797 corrosion Effects 0.000 claims abstract description 59
- 238000005260 corrosion Methods 0.000 claims abstract description 59
- -1 amine compound Chemical class 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 46
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000003112 inhibitor Substances 0.000 claims abstract description 15
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 14
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000003880 polar aprotic solvent Substances 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 10
- 238000009835 boiling Methods 0.000 claims abstract description 8
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 30
- 150000001875 compounds Chemical class 0.000 claims description 30
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 28
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 16
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 14
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 6
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims description 6
- 239000004094 surface-active agent Substances 0.000 claims description 6
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 5
- JZSWZDBPGBBRNA-UHFFFAOYSA-N [hydroxymethyl(methyl)amino]methanol Chemical compound OCN(C)CO JZSWZDBPGBBRNA-UHFFFAOYSA-N 0.000 claims description 5
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 5
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 5
- 150000002431 hydrogen Chemical class 0.000 claims description 5
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 claims description 4
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 4
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 4
- 229940043237 diethanolamine Drugs 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 claims description 4
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 claims description 4
- 229960004418 trolamine Drugs 0.000 claims description 4
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 3
- QZXIXSZVEYUCGM-UHFFFAOYSA-N 2-aminopropan-2-ol Chemical compound CC(C)(N)O QZXIXSZVEYUCGM-UHFFFAOYSA-N 0.000 claims description 3
- JIGUICYYOYEXFS-UHFFFAOYSA-N 3-tert-butylbenzene-1,2-diol Chemical compound CC(C)(C)C1=CC=CC(O)=C1O JIGUICYYOYEXFS-UHFFFAOYSA-N 0.000 claims description 3
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 3
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 2
- BKMMTJMQCTUHRP-UHFFFAOYSA-N 2-aminopropan-1-ol Chemical compound CC(N)CO BKMMTJMQCTUHRP-UHFFFAOYSA-N 0.000 claims description 2
- BLFRQYKZFKYQLO-UHFFFAOYSA-N 4-aminobutan-1-ol Chemical compound NCCCCO BLFRQYKZFKYQLO-UHFFFAOYSA-N 0.000 claims description 2
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 claims description 2
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 claims description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 2
- 125000002843 carboxylic acid group Chemical group 0.000 claims description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- 229940074391 gallic acid Drugs 0.000 claims description 2
- 235000004515 gallic acid Nutrition 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 2
- 229940079877 pyrogallol Drugs 0.000 claims description 2
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 claims description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 2
- 125000001302 tertiary amino group Chemical group 0.000 claims description 2
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 claims 1
- 239000003518 caustics Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 22
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000000206 photolithography Methods 0.000 abstract description 7
- 238000004140 cleaning Methods 0.000 abstract description 6
- 229910000838 Al alloy Inorganic materials 0.000 abstract description 5
- 230000000052 comparative effect Effects 0.000 description 14
- 150000001412 amines Chemical class 0.000 description 12
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000004615 ingredient Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000002736 nonionic surfactant Substances 0.000 description 5
- 229910021642 ultra pure water Inorganic materials 0.000 description 5
- 239000012498 ultrapure water Substances 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 150000002443 hydroxylamines Chemical class 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000002798 polar solvent Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- ATTRMYMZQWIZOR-RRKCRQDMSA-N 4-amino-1-[(2r,4s,5r)-4-hydroxy-5-(hydroxymethyl)oxolan-2-yl]-6-methyl-1,3,5-triazin-2-one Chemical compound CC1=NC(N)=NC(=O)N1[C@@H]1O[C@H](CO)[C@@H](O)C1 ATTRMYMZQWIZOR-RRKCRQDMSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 150000001414 amino alcohols Chemical class 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- DLDJFQGPPSQZKI-UHFFFAOYSA-N but-2-yne-1,4-diol Chemical compound OCC#CCO DLDJFQGPPSQZKI-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 229940016681 dipropylacetamide Drugs 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- OMOMUFTZPTXCHP-UHFFFAOYSA-N valpromide Chemical compound CCCC(C(N)=O)CCC OMOMUFTZPTXCHP-UHFFFAOYSA-N 0.000 description 2
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 1
- CCAFPWNGIUBUSD-UHFFFAOYSA-N diethyl sulfoxide Chemical compound CCS(=O)CC CCAFPWNGIUBUSD-UHFFFAOYSA-N 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002440 hydroxy compounds Chemical class 0.000 description 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 231100001231 less toxic Toxicity 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- GHVUKOCVBVUUGS-UHFFFAOYSA-N n-ethyl-n-methylpropanamide Chemical compound CCN(C)C(=O)CC GHVUKOCVBVUUGS-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D9/00—Chemical paint or ink removers
- C09D9/005—Chemical paint or ink removers containing organic solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
구 분 | 조성 성분 (중량%) | ||||||||||||
a)성분 | b)성분 | c)성분 | d)성분 | e)성분 | f) 성분 | g) 성분 | |||||||
종류 | 양 | 종류 | 양 | 종류 | 양 | 종류 | 양 | 종류 | 양 | ||||
실 시 예 | 1 | AEE | 10 | BDG | 59.3 | NMP | 30 | D1 | 0.2 | E1 | 0.5 | - | - |
2 | NMAE | 10 | BDG | 59.3 | NMP | 30 | D1 | 0.2 | E1 | 0.5 | - | - | |
3 | MEA | 10 | EDG | 38.8 | DMSO | 50 | D1 | 0.2 | E1 | 1 | - | - | |
4 | AIP | 10 | DPM | 58.9 | DMAc | 30 | D2 | 0.1 | E2 | 1 | - | - | |
5 | AEE | 5 | DPM | 54.5 | TMS | 40 | D2 | 0.4 | E2 | 0.1 | - | - | |
6 | AEE | 20 | EDG | 29.1 | DMSO | 50 | D2 | 0.2 | E1 | 0.7 | - | - | |
7 | NMAE | 20 | BDG | 49.1 | TMS | 30 | D1 | 0.2 | E1 | 0.7 | - | - | |
8 | MEA | 15 | BDG | 42.9 | NMP | 40 | D1 | 0.1 | E | 2 | - | - | |
9 | MEA | 20 | BDG | 36.9 | NMP | 40 | D1 | 0.1 | E1 | 3 | - | - | |
10 | MEA | 30 | BDG | 25.9 | DMAc | 40 | D1 | 0.1 | E1 | 4 | - | - | |
11 | AEE | 10 | BDG | 57.5 | DMAc | 30 | D2 | 2 | E2 | 0.5 | - | - | |
12 | NMAE | 10 | BDG | 57.4 | DMAc | 30 | D2 | 2 | E2 | 0.5 | - | 0.1 | |
13 | NMAE | 10 | DPM | 49.2 | DMAc | 30 | D1 | 0.2 | E1 | 0.5 | 10 | 0.1 | |
14 | AEE | 20 | DPM | 29.2 | DMAc | 30 | D1 | 0.2 | E1 | 0.5 | 20 | 0.1 | |
15 | AIP | 10 | DPM | 39.2 | NMP | 30 | D1 | 0.2 | E1 | 0.5 | 20 | 0.1 | |
비 교 예 | 1 | AEE | 10 | BDG | 60 | NMP | 30 | - | - | - | - | - | - |
2 | NMAE | 10 | BDG | 60 | NMP | 30 | - | - | - | - | - | - | |
3 | MEA | 10 | EDG | 40 | DMSO | 50 | - | - | - | - | - | - | |
4 | AIP | 10 | DPM | 59.8 | DMAc | 30 | D1 | 0.2 | - | - | - | - | |
5 | NMAE | 10 | BDG | 59.7 | DMAc | 30 | D1 | 0.2 | - | - | - | 0.1 | |
6 | NMAE | 10 | DPM | 49.4 | DMAc | 30 | - | - | E1 | 0.5 | 10 | 0.1 | |
7 | AEE | 20 | DPM | 29.4 | DMAc | 30 | - | - | E1 | 0.5 | 20 | 0.1 |
구 분 | 물성 | ||
박리 | 부식평가 | ||
70 ℃ | 1 | 2 | |
실시예 1 | ◎ | ◎ | ◎ |
실시예 2 | ◎ | ◎ | ◎ |
실시예 3 | ◎ | ◎ | ◎ |
실시예 4 | ◎ | ◎ | ◎ |
실시예 5 | ○ | ◎ | ◎ |
실시예 6 | ◎ | ◎ | ◎ |
실시예 7 | ◎ | ◎ | ◎ |
실시예 8 | ◎ | ◎ | ◎ |
실시예 9 | ◎ | ◎ | ◎ |
실시예 10 | ◎ | ◎ | ◎ |
실시예 11 | ◎ | ◎ | ◎ |
실시예 12 | ◎ | ◎ | ◎ |
실시예 13 | ○ | ◎ | ◎ |
실시예 14 | ◎ | ○ | ◎ |
실시예 15 | ◎ | ○ | ◎ |
비교예 1 | ○ | ○ | × |
비교예 2 | ○ | ○ | × |
비교예 3 | ◎ | △ | × |
비교예 4 | ◎ | △ | × |
비교예 5 | ◎ | ○ | × |
비교예 6 | △ | ◎ | ◎ |
비교예 7 | ◎ | ○ | ◎ |
Claims (14)
- a) 수용성 유기 아민 화합물 5 내지 50 중량%;b) 비점이 적어도 150 ℃ 이상인 양자성 알킬렌글리콜 모노알킬에테르 화합물 20 내지 70 중량%;c) 극성 비양자성 용매 0.01 내지 70 중량%;d) 2,2'-(6-메틸-1H-벤조트리아졸)메틸이미노비스에탄올, 2,2'-(5-메틸-1H-벤조트리아졸)메틸이미노비스에탄올, 1,1'-(6-메틸-1H-벤조트리아졸)메틸이미노비스메탄올, 및 1,1'-(5-메틸-1H-벤조트리아졸)메틸이미노비스메탄올로 이루어진 군으로부터 1 종 이상 선택되는 박리 촉진제 0.01 내지 5 중량%; 및e) 하기 화학식 2로 표시되는 화합물로 이루어진 군으로부터 1 종 이상 선택되는 부식 방지제 0.01 내지 5 중량%를 포함하는 포토레지스트용 스트리퍼 조성물:[화학식 2]상기 화학식 2의 식에서,R4 및 R5는 각각 독립적으로 또는 동시에 수소, 또는 하이드록시기이고,R6은 수소, t-부틸기, 또는 카르복실산기(-COOH)이다.
- 제 1항에 있어서,상기 a)의 수용성 유기 아민 화합물이 1차 아미노 알코올류 화합물, 2차 아미노 알코올류 화합물, 및 3차 아미노 알코올류 화합물로 이루어진 군으로부터 1 종 이상 선택되는 아미노 알코올류 화합물인 포토레지스트용 스트리퍼 조성물.
- 제 2항에 있어서,상기 아미노 알코올류 화합물이 모노에탄올 아민(MEA), 1-아미노이소프로판올(AIP), 2-아미노-1-프로판올, N-메틸아미노에탄올(N-MAE), 3-아미노-1-프로판올, 4-아미노-1-부탄올, 2-(2-아미노에톡시)-1-에탄올(AEE), 2-(2-아미노에틸아미노)-1-에탄올, 디에탄올 아민(DEA), 및 트리에탄올 아민(TEA)으로 이루어진 군으로부터 1 종 이상 선택되는 포토레지스트용 스트리퍼 조성물.
- 제 1항에 있어서,상기 b)의 양자성 알킬렌글리콜 모노알킬에테르 화합물이 디에틸렌글리콜 모노메틸에테르(메틸 카비톨, MDG), 디에틸렌글리콜 모노에틸에테르(에틸 카비톨, EDG), 디에틸렌글리콜 모노부틸에테르(부틸 카비톨, BDG), 디프로필렌글리콜 모노메틸에테르(DPM), 및 디프로필렌글리콜 모노에틸에테르(DPE)로 이루어진 군으로부터 1 종 이상 선택되는 포토레지스트용 스트리퍼 조성물.
- 제 1항에 있어서,상기 c)의 극성 비양자성 용매가 N-메틸피롤리돈, 1,3-디메틸-2-이미다졸리디논, 디메틸설폭사이드, 디메틸아세트아마이드, 디메틸포름아마이드, 및 테트라메틸렌설폰으로 이루어진 군으로부터 1 종 이상 선택되는 포토레지스트용 스트리퍼 조성물.
- 삭제
- 제 1항에 있어서,상기 e)의 부식 방지제가 카테콜, t-부틸카테콜, 레조시놀, 피로갈롤, 갈산으로 이루어진 군으로부터 1 종 이상 선택되는 포토레지스트용 스트리퍼 조성물.
- 제 1항에 있어서, 상기 스트리퍼 조성물이 f) 물을 최대 30 중량%로 더욱 포함하는 포토레지스트용 스트리퍼 조성물.
- 삭제
- 금속배선을 포함하는 기판상에 형성된 포토레지스트 패턴을 마스크로 에칭처리하고, 제 1항 기재의 스트리퍼 조성물로 박리(stripping)하는 단계를 포함하는 포토레지스트의 박리방법.
- 제 11항에 있어서,상기 박리 방법은 딥방식 또는 매엽식 방식인 것을 특징으로 하는 포토레지스트의 박리방법.
- 제 11항에 있어서,상기 금속배선은 하부막으로 Al-Nd/Mo 이중막을 포함하는 포토레지스트의 박리방법.
- 제 11항 기재의 박리방법을 포함하여 제조되는 액정표시장치 또는 반도체 소자.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030030987A KR100544889B1 (ko) | 2003-05-15 | 2003-05-15 | 포토레지스트용 스트리퍼 조성물 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030030987A KR100544889B1 (ko) | 2003-05-15 | 2003-05-15 | 포토레지스트용 스트리퍼 조성물 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040098751A KR20040098751A (ko) | 2004-11-26 |
KR100544889B1 true KR100544889B1 (ko) | 2006-01-24 |
Family
ID=37376463
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030030987A KR100544889B1 (ko) | 2003-05-15 | 2003-05-15 | 포토레지스트용 스트리퍼 조성물 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100544889B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101152139B1 (ko) | 2005-12-06 | 2012-06-15 | 삼성전자주식회사 | 표시 장치용 세정제 및 이를 사용하는 박막 트랜지스터표시판의 제조 방법 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050087357A (ko) * | 2004-02-26 | 2005-08-31 | 주식회사 동진쎄미켐 | 포토레지스트 박리액 조성물 |
KR100794465B1 (ko) * | 2005-05-13 | 2008-01-16 | 주식회사 엘지화학 | 포토레지스트용 스트리퍼 조성물 |
KR100846057B1 (ko) * | 2005-05-13 | 2008-07-11 | 주식회사 엘지화학 | 포토레지스트용 스트리퍼 조성물 |
KR20070114038A (ko) * | 2006-05-26 | 2007-11-29 | 주식회사 엘지화학 | 포토레지스트용 스트리퍼 조성물 |
KR102032321B1 (ko) * | 2012-11-13 | 2019-10-15 | 동우 화인켐 주식회사 | 얼룩 발생 방지용 레지스트 박리액 조성물 |
US9865475B2 (en) | 2012-12-18 | 2018-01-09 | Npics Inc. | Dry separation method using high-speed particle beam |
WO2014137173A1 (ko) * | 2013-03-07 | 2014-09-12 | 주식회사 엘지화학 | 포토레지스트 제거용 스트리퍼 조성물 및 이를 사용한 포토레지스트의 박리방법 |
KR102119438B1 (ko) * | 2013-10-30 | 2020-06-08 | 삼성디스플레이 주식회사 | 박리액 및 이를 이용한 표시 장치의 제조방법 |
US11402759B2 (en) | 2015-06-13 | 2022-08-02 | Npics Inc. | Dry separation apparatus, nozzle for generating high-speed particle beam for dry separation |
KR102572751B1 (ko) * | 2016-03-15 | 2023-08-31 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 |
US11460778B2 (en) * | 2018-04-12 | 2022-10-04 | Versum Materials Us, Llc | Photoresist stripper |
-
2003
- 2003-05-15 KR KR1020030030987A patent/KR100544889B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101152139B1 (ko) | 2005-12-06 | 2012-06-15 | 삼성전자주식회사 | 표시 장치용 세정제 및 이를 사용하는 박막 트랜지스터표시판의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR20040098751A (ko) | 2004-11-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100913048B1 (ko) | 포토레지스트용 스트리퍼 조성물 | |
KR100846057B1 (ko) | 포토레지스트용 스트리퍼 조성물 | |
JP2005043873A (ja) | フォトレジスト剥離液組成物及びそれを用いたフォトレジストの剥離方法 | |
KR100794465B1 (ko) | 포토레지스트용 스트리퍼 조성물 | |
KR100544889B1 (ko) | 포토레지스트용 스트리퍼 조성물 | |
KR101082515B1 (ko) | 포토레지스트 스트리퍼 조성물 및 이를 이용한 포토레지스트 박리방법 | |
KR101051438B1 (ko) | 포토레지스트 스트리퍼 조성물 및 이를 이용한포토레지스트 박리방법 | |
KR101304723B1 (ko) | 아미드계 화합물을 포함하는 포토레지스트 박리액 및 이를이용한 박리 방법 | |
KR100850163B1 (ko) | 포토레지스트용 스트리퍼 조성물 | |
KR101213731B1 (ko) | 포토레지스트용 스트리퍼 조성물 | |
KR100440484B1 (ko) | 포토레지스트용 스트리퍼 조성물 | |
KR101319217B1 (ko) | 포토레지스트 박리액 조성물 및 이를 이용하는포토레지스트의 박리방법 | |
KR100324172B1 (ko) | 포토레지스트박리액조성물및이를이용한포토레지스트박리방법 | |
KR100568558B1 (ko) | 구리 배선용 포토레지스트 스트리퍼 조성물 | |
KR100378552B1 (ko) | 레지스트 리무버 조성물 | |
KR100544888B1 (ko) | 구리 배선용 포토레지스트 스트리퍼 조성물 | |
KR100862988B1 (ko) | 포토레지스트 리무버 조성물 | |
KR100378551B1 (ko) | 레지스트 리무버 조성물 | |
KR20040083157A (ko) | 포토레지스트용 스트리퍼 조성물 | |
KR20040088990A (ko) | 포토레지스트 박리액 조성물 | |
KR20020067296A (ko) | 포토레지스트 리무버 조성물 | |
KR20040089429A (ko) | 포토레지스트 박리액 조성물 | |
KR20040088989A (ko) | 포토레지스트 박리액용 부식방지제 및 이를 이용한포토레지스트 박리액 조성물 | |
KR20100011472A (ko) | 구리용 레지스트 제거용 조성물 | |
KR20110026976A (ko) | 구리계 배선의 형성을 위한 레지스트 제거용 조성물 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130111 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20140103 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20141231 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20151229 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20180102 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20190107 Year of fee payment: 14 |
|
FPAY | Annual fee payment |
Payment date: 20200102 Year of fee payment: 15 |