ATE288468T1 - Stabile alkalische zusammensetzungen zum reinigen von mikroelektronischen substraten - Google Patents
Stabile alkalische zusammensetzungen zum reinigen von mikroelektronischen substratenInfo
- Publication number
- ATE288468T1 ATE288468T1 AT01977863T AT01977863T ATE288468T1 AT E288468 T1 ATE288468 T1 AT E288468T1 AT 01977863 T AT01977863 T AT 01977863T AT 01977863 T AT01977863 T AT 01977863T AT E288468 T1 ATE288468 T1 AT E288468T1
- Authority
- AT
- Austria
- Prior art keywords
- optionally
- weight
- water
- alkaline compositions
- metal ion
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 3
- 238000004140 cleaning Methods 0.000 title abstract 2
- 238000004377 microelectronic Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract 1
- 239000002738 chelating agent Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000000356 contaminant Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 239000003381 stabilizer Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3245—Aminoacids
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/20—Other heavy metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/22—Light metals
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/906—Cleaning of wafer as interim step
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/688,559 US6585825B1 (en) | 1998-05-18 | 2000-10-16 | Stabilized alkaline compositions for cleaning microelectronic substrates |
US09/859,142 US6599370B2 (en) | 2000-10-16 | 2001-05-16 | Stabilized alkaline compositions for cleaning microelectronic substrates |
PCT/US2001/042406 WO2002033033A1 (en) | 2000-10-16 | 2001-09-28 | Stabilized alkaline compositions for cleaning microelectronic substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE288468T1 true ATE288468T1 (de) | 2005-02-15 |
Family
ID=27104249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT01977863T ATE288468T1 (de) | 2000-10-16 | 2001-09-28 | Stabile alkalische zusammensetzungen zum reinigen von mikroelektronischen substraten |
Country Status (14)
Country | Link |
---|---|
US (1) | US6599370B2 (de) |
EP (1) | EP1326951B1 (de) |
JP (1) | JP4758055B2 (de) |
KR (1) | KR20030051721A (de) |
CN (1) | CN1205325C (de) |
AT (1) | ATE288468T1 (de) |
AU (1) | AU2001296947A1 (de) |
CA (1) | CA2425613A1 (de) |
DE (1) | DE60108774T2 (de) |
HK (1) | HK1062310A1 (de) |
IL (1) | IL155429A0 (de) |
MX (1) | MXPA03003353A (de) |
TW (1) | TWI294909B (de) |
WO (1) | WO2002033033A1 (de) |
Families Citing this family (167)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6825156B2 (en) * | 2002-06-06 | 2004-11-30 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
US7129199B2 (en) * | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
US7348300B2 (en) * | 1999-05-04 | 2008-03-25 | Air Products And Chemicals, Inc. | Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture |
US7208049B2 (en) * | 2003-10-20 | 2007-04-24 | Air Products And Chemicals, Inc. | Process solutions containing surfactants used as post-chemical mechanical planarization treatment |
US6653243B2 (en) * | 2000-05-25 | 2003-11-25 | Micron Technology, Inc. | Methods of cleaning surfaces of copper-containing materials, and methods of forming openings to copper-containing substrates |
US6855679B2 (en) * | 2000-06-19 | 2005-02-15 | Lance L. Renfrow | Detergent composition and method of using same |
JP2002318455A (ja) * | 2001-04-23 | 2002-10-31 | Tosoh Corp | 安定化方法 |
MY131912A (en) * | 2001-07-09 | 2007-09-28 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
MY143399A (en) | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
US6589882B2 (en) * | 2001-10-24 | 2003-07-08 | Micron Technology, Inc. | Copper post-etch cleaning process |
US6773873B2 (en) * | 2002-03-25 | 2004-08-10 | Advanced Technology Materials, Inc. | pH buffered compositions useful for cleaning residue from semiconductor substrates |
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JP3516446B2 (ja) | 2002-04-26 | 2004-04-05 | 東京応化工業株式会社 | ホトレジスト剥離方法 |
US7252718B2 (en) * | 2002-05-31 | 2007-08-07 | Ekc Technology, Inc. | Forming a passivating aluminum fluoride layer and removing same for use in semiconductor manufacture |
US8003587B2 (en) * | 2002-06-06 | 2011-08-23 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
CA2488735A1 (en) * | 2002-06-07 | 2003-12-18 | Mallinckrodt Baker, Inc. | Microelectronic cleaning compositions containing oxidizers and organic solvents |
JP4330529B2 (ja) | 2002-06-07 | 2009-09-16 | マリンクロッド・ベイカー・インコーポレイテッド | マイクロエレクトロニクス洗浄およびarc除去組成物 |
US7393819B2 (en) * | 2002-07-08 | 2008-07-01 | Mallinckrodt Baker, Inc. | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
JP4443864B2 (ja) | 2002-07-12 | 2010-03-31 | 株式会社ルネサステクノロジ | レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法 |
DE10331033B4 (de) * | 2002-07-12 | 2010-04-29 | Ekc Technology K.K. R&D Business Park Bldg. D-3F, Kawasaki | Herstellungsverfahren einer Halbleitervorrichtung und Reinigungszusammensetzung dafür |
US20040050406A1 (en) * | 2002-07-17 | 2004-03-18 | Akshey Sehgal | Compositions and method for removing photoresist and/or resist residue at pressures ranging from ambient to supercritical |
US6641986B1 (en) * | 2002-08-12 | 2003-11-04 | Air Products And Chemicals, Inc. | Acetylenic diol surfactant solutions and methods of using same |
AU2003286584A1 (en) | 2002-10-22 | 2004-05-13 | Ekc Technology, Inc. | Aqueous phosphoric acid compositions for cleaning semiconductor devices |
AU2003276094A1 (en) * | 2002-11-05 | 2004-06-07 | Merck Patent Gmbh | Semiconductor surface treatment and mixture used therein |
US7481949B2 (en) * | 2002-11-08 | 2009-01-27 | Wako Pure Chemical Industries, Ltd | Polishing composition and rinsing composition |
EP1562225A4 (de) * | 2002-11-08 | 2007-04-18 | Wako Pure Chem Ind Ltd | Reinigungszusammensetzung und verfahren zum reinigen damit |
US6803353B2 (en) * | 2002-11-12 | 2004-10-12 | Atofina Chemicals, Inc. | Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents |
US7459005B2 (en) * | 2002-11-22 | 2008-12-02 | Akzo Nobel N.V. | Chemical composition and method |
US8236485B2 (en) * | 2002-12-20 | 2012-08-07 | Advanced Technology Materials, Inc. | Photoresist removal |
SG129274A1 (en) * | 2003-02-19 | 2007-02-26 | Mitsubishi Gas Chemical Co | Cleaaning solution and cleaning process using the solution |
US20040220066A1 (en) * | 2003-05-01 | 2004-11-04 | Rohm And Haas Electronic Materials, L.L.C. | Stripper |
JP3828511B2 (ja) * | 2003-06-26 | 2006-10-04 | 株式会社東芝 | 半導体装置の製造方法 |
DE602004009584T2 (de) * | 2003-06-27 | 2008-08-07 | Interuniversitair Microelektronica Centrum (Imec) | Halbleiterreinigungslösung |
US7306663B2 (en) * | 2003-08-05 | 2007-12-11 | Halox, Division Of Hammond Group, Inc. | Corrosion inhibitor |
EP1664935B1 (de) * | 2003-08-19 | 2007-10-17 | Mallinckrodt Baker, Inc. | Ablös- und reinigungszusammensetzungen für die mikroelektronik |
US20050049162A1 (en) * | 2003-08-29 | 2005-03-03 | Schlosser Ted M. | Petroleum-free, ammonia-free cleaner for firearms and ordnance |
TWI362415B (en) * | 2003-10-27 | 2012-04-21 | Wako Pure Chem Ind Ltd | Novel detergent and method for cleaning |
KR101132533B1 (ko) * | 2003-10-29 | 2012-04-03 | 아반토르 퍼포먼스 머티리얼스, 인크. | 알칼리성, 플라즈마 에칭/애싱 후 잔류물 제거제 및금속-할라이드 부식 억제제를 함유한 포토레지스트스트리핑 조성물 |
US7432233B2 (en) * | 2003-12-18 | 2008-10-07 | Interuniversitair Microelektronica Centrum (Imec) | Composition and method for treating a semiconductor substrate |
CN1918698B (zh) | 2004-02-09 | 2010-04-07 | 三菱化学株式会社 | 半导体装置用基板的洗涤液及洗涤方法 |
US7498295B2 (en) * | 2004-02-12 | 2009-03-03 | Air Liquide Electronics U.S. Lp | Alkaline chemistry for post-CMP cleaning comprising tetra alkyl ammonium hydroxide |
US8338087B2 (en) * | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
US20050205835A1 (en) * | 2004-03-19 | 2005-09-22 | Tamboli Dnyanesh C | Alkaline post-chemical mechanical planarization cleaning compositions |
US20050227482A1 (en) * | 2004-03-24 | 2005-10-13 | Korzenski Michael B | Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers |
DE102004017440A1 (de) * | 2004-04-08 | 2005-11-03 | Enthone Inc., West Haven | Verfahren zur Behandlung von laserstrukturierten Kunststoffoberflächen |
KR100585139B1 (ko) * | 2004-04-12 | 2006-05-30 | 삼성전자주식회사 | 웨이퍼 세정액의 금속 측정 시약과 웨이퍼 세정액의 금속오염 모니터링 장치 및 방법 |
JP4369284B2 (ja) * | 2004-04-19 | 2009-11-18 | 東友ファインケム株式会社 | レジスト剥離剤 |
JP2007536566A (ja) * | 2004-05-07 | 2007-12-13 | ドウジン セミケム カンパニー リミテッド | (フォト)レジスト除去用組成物 |
KR101082018B1 (ko) * | 2004-05-07 | 2011-11-10 | 주식회사 동진쎄미켐 | 레지스트 제거용 조성물 |
CN101010421B (zh) * | 2004-08-31 | 2011-08-03 | 三洋化成工业株式会社 | 表面活性剂 |
JP4628209B2 (ja) * | 2004-11-18 | 2011-02-09 | 花王株式会社 | 剥離剤組成物 |
JP4272677B2 (ja) * | 2004-12-10 | 2009-06-03 | マリンクロッド・ベイカー・インコーポレイテッド | ポリマー腐食阻害剤含有、非水性非腐食性マイクロエレクトロニクス洗浄組成物 |
US20060154186A1 (en) * | 2005-01-07 | 2006-07-13 | Advanced Technology Materials, Inc. | Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings |
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- 2001-09-28 IL IL15542901A patent/IL155429A0/xx not_active IP Right Cessation
- 2001-09-28 JP JP2002536403A patent/JP4758055B2/ja not_active Expired - Fee Related
- 2001-09-28 WO PCT/US2001/042406 patent/WO2002033033A1/en active IP Right Grant
- 2001-09-28 CN CNB018174671A patent/CN1205325C/zh not_active Expired - Lifetime
- 2001-10-12 TW TW090125230A patent/TWI294909B/zh not_active IP Right Cessation
-
2004
- 2004-07-15 HK HK04105196A patent/HK1062310A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
IL155429A0 (en) | 2003-11-23 |
US6599370B2 (en) | 2003-07-29 |
CN1205325C (zh) | 2005-06-08 |
US20020077259A1 (en) | 2002-06-20 |
DE60108774T2 (de) | 2006-03-16 |
AU2001296947A1 (en) | 2002-04-29 |
KR20030051721A (ko) | 2003-06-25 |
JP2004511917A (ja) | 2004-04-15 |
EP1326951B1 (de) | 2005-02-02 |
HK1062310A1 (en) | 2004-10-29 |
DE60108774D1 (de) | 2005-03-10 |
MXPA03003353A (es) | 2004-12-02 |
CA2425613A1 (en) | 2002-04-25 |
EP1326951A1 (de) | 2003-07-16 |
JP4758055B2 (ja) | 2011-08-24 |
WO2002033033A1 (en) | 2002-04-25 |
CN1469918A (zh) | 2004-01-21 |
TWI294909B (en) | 2008-03-21 |
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