EP1777321A1 - Sputtertarget, transparentes und leitendes Oxid sowie Verfahren zur Herstellung des Sputtertargets - Google Patents

Sputtertarget, transparentes und leitendes Oxid sowie Verfahren zur Herstellung des Sputtertargets Download PDF

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Publication number
EP1777321A1
EP1777321A1 EP06122640A EP06122640A EP1777321A1 EP 1777321 A1 EP1777321 A1 EP 1777321A1 EP 06122640 A EP06122640 A EP 06122640A EP 06122640 A EP06122640 A EP 06122640A EP 1777321 A1 EP1777321 A1 EP 1777321A1
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Prior art keywords
transparent conductive
film
grain size
target
oxide
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EP06122640A
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English (en)
French (fr)
Inventor
Kazuyoshi Inoue
Tadao Shibuya
Akira Kaijo
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Idemitsu Kosan Co Ltd
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Idemitsu Kosan Co Ltd
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Publication of EP1777321A1 publication Critical patent/EP1777321A1/de
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    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/963—Surface properties, e.g. surface roughness
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9646—Optical properties
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9646—Optical properties
    • C04B2235/9653—Translucent or transparent ceramics other than alumina
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making

Definitions

  • the present invention relates to a sputtering target (which may be referred to merely as a target hereinafter), a transparent conductive oxide made of the sputtering target, and a process for producing the sputtering target.
  • the present invention relates particularly to a target making it possible to suppress nodules generated when sputtering is used to form a transparent conductive oxide into a film, and to make the sputtering stable, a transparent conductive oxide made of such a target, and a process for producing such a target.
  • LCD liquid crystal display devices
  • EL electroluminescence display devices
  • FED field emission displays
  • indium tin oxide (which may be referred to ITO hereinafter) formed into a film by sputtering, ion plating or vapor deposition accounts for the main current, as disclosed in document 1:
  • Such ITO is made of indium oxide and tin oxide of given amounts and is characterized by having superior transparency and conductivity, being capable of being etched with a strong acid, and having good adhesion to a substrate.
  • JP-A-3-50148 JP-A-5-155651 , JP-A-5-70943 , JP-A-6-234565 and so on
  • a target made of indium oxide, tin oxide and zinc oxide of given amounts or a transparent electrode made from such a target into a film (which may be referred to as IZO hereinafter).
  • This can be etched with a weak acid, and is widely used because it has good sinterability and transparency.
  • ITO or IZO has superior performances as the material of a transparent conductive oxide, but has a problem that when a target is used to form ITO or IZO into a film, nodules (swellings) as shown in FIG. 2 (photograph) are easily generated in the surface of the target.
  • nodules When such nodules are generated in the surface of the target, the nodules are easily scattered by power of plasma during the sputtering. As a result, there arises a problem that the scattered substances adhere, as alien substances, to the transparent conductive oxide during or immediately after the formation of the film.
  • the nodules generated in the surface of this target account for one of causes of abnormal electric discharge.
  • JP-A-8-283934 as measures for suppressing the generation of nodules in a target, efforts are made to reduce pores by making the material of the target denser through sintering at high temperature. That is, a target having a 99%-density relative to the theoretical density thereof is produced, but even in this case nodules cannot be completely removed.
  • nodules generated in the surface of a target are basically the remainders of excavation and the cause for generating this remainder of excavation depends on the value (for example, 10 ⁇ m or more) of the crystal grain size of metal oxides constituting the target.
  • the speeds of the striking-out are different dependently on the directions of crystal planes so that unevenness is generated in the surface of the target. It has been proved that the size of the unevenness depends on the crystal grain size of metal oxides present in the sintered body.
  • an object of the present invention is to provide a target making it possible to suppress nodules generated when a transparent conductive oxide is formed into a film by sputtering, and to make the sputtering stable, a transparent conductive oxide made of such a target, and a process for producing such a target.
  • the spinel structural compound whose grain size is beforehand controlled can be used. Therefore, the average grain size in the target can be more easily controlled.
  • the first embodiment is an embodiment related to the first invention, and is a sputtering target comprising at least indium oxide and zinc oxide, wherein the atomic ratio represented by In/(In+Zn) is set to a value within the range of 0.75 to 0.97, and further, a hexagonal layered compound represented by In 2 O 3 (ZnO) m wherein m is an integer of 2 to 20 is contained, and the crystal grain size of the hexagonal layered compound is set to a value of 5 ⁇ m or less.
  • the second embodiment is an embodiment related to the second invention, and is a sputtering target of the first embodiment, which comprises 67 to 93% by weight of indium oxide, and 5 to 25% by weight of tin oxide, and 2 to 8% by weight of zinc oxide, the atomic ratio of tin to zinc being set to a value of 1 or more.
  • the third embodiment is an embodiment related to the third invention, and is a transparent conductive oxide obtained using a sputtering target wherein the atomic ratio represented by Zn/(In+Zn) is set to a value within the range of 0.75 to 0.97, and further, a hexagonal layered compound represented by Tn 2 O 3 (ZnO) m wherein m is an integer of 2 to 20 is contained, and the crystal grain size of the hexagonal layered compound is set to a value of 5 ⁇ m or less.
  • the fourth embodiment is an embodiment related to the fourth invention, and is a transparent conductive oxide obtained using a sputtering target of the third embodiment, which comprises 67 to 93% by weight of indium oxide, and 5 to 25% by weight of tin oxide, and 2 to 8% by weight of zinc oxide, the atomic ratio of tin to zinc being set to a value of 1 or more.
  • the fifth embodiment is an embodiment related to the fifth invention, and is a transparent conductive oxide of the third or fourth embodiment, wherein the half band width of a binding energy peak of the oxygen 1S orbit, which is measured by X-ray photoelectron spectroscopy (XPS), is set to 3 eV or less.
  • XPS X-ray photoelectron spectroscopy
  • the sixth embodiment is an embodiment related to the sixth invention, and is a transparent conductive oxide formed on a colored layer disposed on a substrate. This embodiment will be described by way of an example of a color filter.
  • the seventh embodiment is an embodiment related to a process for producing the first and second inventions, and is a first process for producing a sputtering target containing a hexagonal layered compound represented by In 2 O 3 (ZnO) m wherein m is an integer of 2 to 20, the crystal grain size of the hexagonal layered compound being a value of 5 ⁇ m or less.
  • This process is a process for producing the sputtering target, comprising the steps (1) to (3):
  • the sintered body obtained by such sintering is cut into a shape suitable for being fitted to a sputtering machine in a working step, and a fitting member is attached to the cut body to prepare a sputtering target.
  • the composition of the respective metal oxides, which are constituent elements of the target is set into the above-mentioned range, and grains having a size of 2 ⁇ m or less are used to sinter the oxides in the atmosphere of oxygen gas or pressured oxygen gas at a temperature of 1,400°C or higher, thereby causing indium oxide and zinc oxide to be present in the form of hexagonal layered compound crystal. Therefore, the bulk resistance of this target is reduced and the target has a fine crystal texture having a crystal grain size of 5 ⁇ m or less.
  • this target when used to form a film by sputtering, the generation of nodules is suppressed. Since the scattering of the nodules by plasma is markedly reduced, the sputtering can be made stable so that a high-quality transparent conductive oxide to which no alien substances are attached can be obtained.
  • the eighth embodiment is related to another process for producing the first and second inventions, and is a second process for producing a sputtering target containing a hexagonal layered compound represented by In 2 O 3 (ZnO) m wherein m is an integer of 2 to 20, the crystal grain size of the hexagonal layered compound being a value of 5 ⁇ m or less.
  • This process is a process for producing the sputtering target, characterized by comprising the steps (1) to (5):
  • the average grain size of the hexagonal layered compound and so on in the target can be very strictly adjusted. Therefore, the generation of nodules can be effectively prevented when the target is used to perform sputtering.
  • the conditions in this step are preferably made to the same as in the seventh embodiment. That is, it is preferred to sinter the formed body obtained in (4) in the atmosphere of oxygen gas or pressured oxygen gas at 1,400 to 1,600°C for 30 minutes to 72 hours.
  • Example Comparative Example 1 2 3 1 2 3 In/(In+Zn) 0.83 0.93 0.95 0.98 0.60 - In/(In+Sn) - - - - - 0.90 Sintered body Density (g/cm 3 ) 6.8 6.8 6.9 6.9 6.3 6.9 Bulk resistance (m ⁇ cm) 0.91 0.94 0.97 2.1 5.4 0.62 Crystal grain size ( ⁇ m) 3.0 3.8 4.6 7.8 9.8 18.0 Target symbol A1 B1 C1 D1 E1 F1
  • Example 4 In the same way as in Example 4, a film of transparent conductive oxide was formed from the resultant target [F2] to evaluate the target and the transparent conductive oxide. The obtained results are shown in Table 4.
  • Example 4 In the same way as in Example 4, a film of transparent conductive oxide was formed from each of the resultant targets [G2], [H2] and [I2]. In this way, the targets and the transparent conductive oxides were evaluated. The obtained results are shown in Table 4.
  • Example Comparative Example 4 5 6 7 8 4 5 6 7 In 2 O 3 weight) (% by weight) 75 73 87 88 91 90 90 87 90 SnO 2 (% by weight) 19.5 20 10 10 7 0 10 10 5 ZnO (% by weight) 5.5 7 3 2 2 10 0 3 5 Sintered body Density (g/cm 3 ) 6.8 6.8 6.9 6.9 7.0 6.9 7.0 6.3 6.4 Bulk resistance (m ⁇ cm) .84 .94 .87 .83 .87 2.1 .87 4.3 1.5 Crystal grain Size ( ⁇ m) 4.1 3.4 3.8 4.5 4.8 4.2 18 7.4 4.8 Target symbol A2 B2 C2 D2 E2 F2 G2 H2 I2
  • a conductive transparent glass was obtained in the same way as in Example 9 except that #7059 made by Corning Inc. was used as a transparent substrate so that a non-alkali glass substrate was used.
  • Conditions for forming the film herein and atomic ratios about constituent metals of the transparent conductive oxide film are shown in Table 5.
  • the conductive transparent glass obtained herein was divided into 3 test pieces. About the two of these pieces, the initial surface resistance, the initial resistivity (R 0 ), the carrier mobility, the resistance change rate and the initial etching rate of the transparent conductive oxide film were measured in the same way as in Example 9.
  • Example 7 The remaining piece was heated at 200°C for 1 hour and subsequently the surface resistance and the etching rate of its transparent conductive oxide film were measured in the same way as in Example 9. The resistivity of the transparent conductive oxide film after the heating was calculated. Evaluation results of the transparent conductive oxide film after the heating are shown in Table 7.
  • a conductive transparent glass was obtained in the same way as in Example 10 except that the temperature of the substrate was set to 215°C. Conditions for forming the film herein and atomic ratios about constituent metals of the transparent conductive oxide film are shown in Table 5.
  • ZnO In 2 O 2
  • SnO 2 hexagonal layered compound
  • a conductive transparent glass was obtained in the same way as in Example 12 except that the same non-alkali glass substrate as in Example 10 was used as a transparent substrate.
  • Conditions for forming the film herein and atomic ratios about constituent metals of the resultant transparent conductive oxide film are shown in Table 5.
  • Example 9 As a transparent substrate, the same polyester film as in Example 9 was used. An epoxy resin layer having a thickness of 1 ⁇ m was deposited on a surface thereof by spin coating. This epoxy resin was photo-cured by UV radiation, to form a crosslinked resin layer.
  • Example 9 As a transparent substrate, the same polyester film as in Example 9 was used. A SiO 2 layer having a thickness of 100 nm was formed thereon by electron beam evaporation. Next, a transparent conductive oxide film was deposited on the surface of this SiO 2 resin layer in the same way as in Example 12. Thus, a conductive transparent film was obtained.
  • a conductive transparent glass was obtained in the same way as in Example 9 except that the same non-alkali glass substrate as in Example 10 was used as a transparent substrate, the temperature of this glass substrate was set to 215°C, and the amount of oxygen gas in the mixed gas at the time of sputtering was set to 3% (oxygen partial pressure: 3 ⁇ 10 -3 Pa).
  • a conductive transparent glass was obtained in the same way as in Example 11 except that the same non-alkali glass substrate as in Example 10 was used as a transparent substrate and an ITO target [In 2 O 3 /5 at.% SnO 2 ] was used as a sputtering target.
  • ZnO In 2 O 3
  • Sn/(In+Zn+Sn) 0.05
  • relative density 94%
  • connection resistance In order to confirm long-term stability of this connection resistance, the test piece obtained by putting and heat-pressing the anisotropic conductive film on the transparent conductive oxide film was allowed to stand still in an oven, the temperature of which was kept at 95°C, for 120 hours and subsequently the connection resistance of the test piece was again measured. In this test piece, no change in the connection resistance was observed even after the long-term heat treatment.
  • composition and evaluation results of the transparent conductive oxide film obtained herein are shown in Table 10.
  • a target was produced and a film of a transparent conductive oxide film was formed in the same way as in Example 23 except that blend proportions of metal oxide components of ingredients were changed as follows: 87.3% by weight of indium oxide, 9.5% by weight of tin oxide and 3.2% by weight of zinc oxide. In this case, the water content in the vacuum chamber was 7 ⁇ 10 -6 Pa.
  • the half band width of the binding energy peak in the oxygen 1S orbit of the resultant transparent conductive oxide film was measured by the XPS method. As a result, it was 2.5 eV.
  • composition and evaluation results of the transparent conductive oxide film are shown in Table 10.
  • a target was produced and a film of a transparent conductive oxide was formed in the same way as in Example 23 except that blend proportions of metal oxide components of ingredients were changed as follows: 81.6% by weight of indium oxide, 12.2% by weight of tin oxide and 6.2% by weight of zinc oxide. In this case, the water content in the vacuum chamber was 9 ⁇ 10 -6 Pa.
  • the half band width of the binding energy peak of the oxygen 1S orbit of the resultant transparent conductive oxide film which was measured by the XPS method, was 2.7 eV.
  • the composition and evaluation results of this transparent conductive oxide film are shown in Table 10.
  • a target (crystal grain size: 15 ⁇ m) was produced and a film of a transparent conductive oxide was formed in the same way as in Example 23 except that indium oxide powder having an average grain size of 3 ⁇ m, tin oxide powder having an average grain size of 3 ⁇ m, and zinc oxide powder having an average grain size of 3 ⁇ m were used and the blend proportions thereof were changed as follows: 88.7% by weight of indium oxide, 10.1% by weight of tin oxide and 1.2% by weight of zinc oxide.
  • the water content in the vacuum chamber was 9 ⁇ 10 -6 Pa.
  • the half band width of the binding energy peak of the oxygen 1S orbit of the resultant transparent conductive oxide film which was measured by the XPS method, was 2.9 eV.
  • the etching rate of the transparent conductive oxide film obtained herein was as small as 4.4 angstrom/second.
  • a target (crystal grain size: 11 ⁇ m) was produced in the same way as in Example 23 except that indium oxide powder having an average grain size of 3 ⁇ m, tin oxide powder having an average grain size of 3 ⁇ m, and zinc oxide powder having an average grain size of 3 ⁇ m were used and the blend proportions thereof were changed as follows: 84.8% by weight of indium oxide, 10.0% by weight of tin oxide and 5.2% by weight of zinc oxide.
  • the vacuum chamber was evacuated into 2 ⁇ 10 -5 Pa at the initial time of the sputtering.
  • the pressure was adjusted into 0.3 Pa with argon gas containing 1% by volume of oxygen gas.
  • the water content in the vacuum chamber was adjusted into 9 ⁇ 10 -4 Pa.
  • a film of a transparent conductive oxide was formed.
  • the half band width of the binding energy peak of the oxygen 1S orbit in the resultant transparent conductive oxide film was 3.3 eV.
  • the resultant transparent conductive oxide film was heat-treated at 95°C for 120 hours. As a result, the connection resistance increased to a great degree.
  • a target (crystal grain size: 14 ⁇ m) was produced and a film of a transparent conductive oxide was formed in the same way as in Example 23 except that indium oxide powder having an average grain size of 3 ⁇ m, tin oxide powder having an average grain size of 3 ⁇ m, and zinc oxide powder having an average grain size of 3 ⁇ m were used and the blend proportions thereof were changed as follows: 83.4% by weight of indium oxide, 4.3% by weight of tin oxide and 12.3% by weight of zinc oxide. In this case, the water content in the vacuum chamber was 1 ⁇ 10 -7 Pa.
  • the half band width of the binding energy peak of the oxygen 1S orbit in the resultant transparent conductive oxide film was 3.8 eV.
  • the measured binding energy peak, measured by the XPS method, of the oxygen 1S orbit in the surface of the resultant transparent conductive oxide film is shown in FIG. 13.
  • the resultant transparent conductive oxide film was heat-treated at 95°C for 120 hours. As a result, the connection resistance increased to a great degree.
  • a target (crystal grain size: 18 ⁇ m) was produced in the same way as in Example 23 except that indium oxide powder having an average grain size of 3 ⁇ m, and tin oxide powder having an average grain size of 3 ⁇ m were used and the blend proportions thereof were changed as follows : 90.0% by weight of indium oxide, and 10.0% by weight of tin oxide.
  • the vacuum chamber was evacuated into 2 ⁇ 10 -5 Pa at the initial time of the sputtering.
  • the pressure was adjusted into 0.3 Pa with argon gas containing 1% by volume of oxygen gas.
  • the water content in the vacuum chamber was adjusted into 9 ⁇ 10 -4 Pa.
  • a film of a transparent conductive oxide was formed.
  • the half band width of the binding energy peak of the oxygen 1S orbit of the thus obtained transparent conductive oxide film was 3.4 eV.
  • the resultant transparent conductive oxide film was heat-treated at 95°C for 120 hours. As a result, the connection resistance increased to a great degree.
  • the film was heated to 230°C at a temperature-rising rate of 20°C/minute in the atmosphere of argon gas.
  • the time for keeping 230°C was set to 1 hour.
  • the transparent conductive film subjected to this heat treatment was crystalline, and the resistivity thereof measured by a four-probe method was 230 ⁇ 10 -6 ⁇ ⁇ cm.
  • the light transmittance about light having a wavelength of 500 nm was 82% according to a spectrometer.
  • the transparency was also superior.
  • the generation of nodules when a transparent conductive oxide is formed into a film by sputtering can be effectively suppressed by controlling the crystal grain size thereof into a given value or more.
  • the sputtering can be stably performed for a long time.
  • transparent conductive oxide of the present invention superior conductivity and transparency can be gained and further smooth surface property can be gained.

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EP06122640A 1999-11-25 2000-11-22 Sputtertarget, transparentes und leitendes Oxid sowie Verfahren zur Herstellung des Sputtertargets Withdrawn EP1777321A1 (de)

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