KR101139203B1 - 스퍼터링 타겟 및 투명한 도전성 산화물 - Google Patents
스퍼터링 타겟 및 투명한 도전성 산화물 Download PDFInfo
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- KR101139203B1 KR101139203B1 KR1020087008129A KR20087008129A KR101139203B1 KR 101139203 B1 KR101139203 B1 KR 101139203B1 KR 1020087008129 A KR1020087008129 A KR 1020087008129A KR 20087008129 A KR20087008129 A KR 20087008129A KR 101139203 B1 KR101139203 B1 KR 101139203B1
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- transparent conductive
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- conductive oxide
- sputtering
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Abstract
Description
Claims (6)
- 산화인듐 및 산화아연을 필수적으로 함유하여 이루어지는 스퍼터링 타겟으로서,In/(In+Zn)으로 나타내는 원자비가 0.75 내지 0.97이고, In2O3(ZnO)m(여기서, m은 2 내지 20의 정수이다)으로 나타내는 육방정계 층상 화합물을 함유하며, 상기 육방정계 층상 화합물의 결정 입경이 5μm 이하임을 특징으로 하는 스퍼터링 타겟.
- 제 1 항에 있어서,벌크저항이 1×10-3Ω?cm 미만임을 특징으로 하는 스퍼터링 타겟.
- 제 1 항에 있어서,밀도가 6.7g/cm3 이상임을 특징으로 하는 스퍼터링 타겟.
- In/(In+Zn)으로 나타내는 원자비가 0.75 내지 0.97이고, In2O3(ZnO)m(여기서, m은 2 내지 20의 정수이다)으로 나타내는 육방정계 층상 화합물을 함유하며, 상기 육방정계 층상 화합물의 결정 입경이 5μm 이하인 스퍼터링 타겟으로 성막하여 이루어진 투명한 도전성 산화물.
- 제 4 항에 있어서,230℃ 이상의 온도로 결정화시켜 이루어진 투명한 도전성 산화물.
- 제 4 항 또는 제 5 항에 있어서,기재상 또는 상기 기재상에 설치한 착색층상에 형성되어 이루어지는 것을 특징으로 하는 투명한 도전성 산화물.
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JPJP-P-1999-00333730 | 1999-11-25 | ||
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JPJP-P-1999-00333731 | 1999-11-25 | ||
JP33373099 | 1999-11-25 | ||
JP2000027741 | 2000-02-04 | ||
JPJP-P-2000-00027741 | 2000-02-04 | ||
JP2000042378 | 2000-02-21 | ||
JPJP-P-2000-00042378 | 2000-02-21 | ||
JP2000111505 | 2000-04-13 | ||
JPJP-P-2000-00111505 | 2000-04-13 | ||
JPJP-P-2000-00118924 | 2000-04-20 | ||
JP2000118924 | 2000-04-20 | ||
PCT/JP2000/008236 WO2001038599A1 (fr) | 1999-11-25 | 2000-11-22 | Cible de pulverisation cathodique, oxyde electro-conducteur transparent, et procede d'elaboration d'une cible de pulverisation cathodique |
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KR1020087008129A KR101139203B1 (ko) | 1999-11-25 | 2000-11-22 | 스퍼터링 타겟 및 투명한 도전성 산화물 |
KR1020027006691A KR100774778B1 (ko) | 1999-11-25 | 2000-11-22 | 스퍼터링 타겟, 투명한 도전성 산화물 및 스퍼터링 타겟의제조방법 |
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EP (3) | EP1752430B1 (ko) |
JP (3) | JP4850378B2 (ko) |
KR (3) | KR100849258B1 (ko) |
CN (1) | CN1195886C (ko) |
DE (2) | DE60042431D1 (ko) |
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Also Published As
Publication number | Publication date |
---|---|
EP1777321A1 (en) | 2007-04-25 |
DE60041353D1 (de) | 2009-02-26 |
KR100774778B1 (ko) | 2007-11-07 |
CN1195886C (zh) | 2005-04-06 |
US6669830B1 (en) | 2003-12-30 |
JP2011068993A (ja) | 2011-04-07 |
KR20020069190A (ko) | 2002-08-29 |
WO2001038599A1 (fr) | 2001-05-31 |
JP5306308B2 (ja) | 2013-10-02 |
JP5558420B2 (ja) | 2014-07-23 |
EP1752430B1 (en) | 2009-06-17 |
EP1233082A4 (en) | 2006-01-25 |
EP1233082A1 (en) | 2002-08-21 |
EP1752430A1 (en) | 2007-02-14 |
JP4850378B2 (ja) | 2012-01-11 |
KR100849258B1 (ko) | 2008-07-29 |
JP2011190542A (ja) | 2011-09-29 |
HK1050720A1 (en) | 2003-07-04 |
KR20080035025A (ko) | 2008-04-22 |
EP1233082B1 (en) | 2009-01-07 |
KR20070089755A (ko) | 2007-08-31 |
CN1379827A (zh) | 2002-11-13 |
DE60042431D1 (de) | 2009-07-30 |
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