EP1502284A4 - Procede de fabrication de dispositifs verticaux au moyen d'un film support metallique - Google Patents
Procede de fabrication de dispositifs verticaux au moyen d'un film support metalliqueInfo
- Publication number
- EP1502284A4 EP1502284A4 EP03728297A EP03728297A EP1502284A4 EP 1502284 A4 EP1502284 A4 EP 1502284A4 EP 03728297 A EP03728297 A EP 03728297A EP 03728297 A EP03728297 A EP 03728297A EP 1502284 A4 EP1502284 A4 EP 1502284A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- metal support
- support film
- vertical devices
- fabricating vertical
- fabricating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Weting (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP13154098.1A EP2592664B1 (fr) | 2002-04-09 | 2003-03-31 | Dispositif semi-conducteur émetteur de lumière à topologie verticale |
EP13174570.5A EP2648236B1 (fr) | 2002-04-09 | 2003-03-31 | Dispositifs verticaux émetteurs de lumière comprenant un film de support métallique |
EP19158965.4A EP3518296A1 (fr) | 2002-04-09 | 2003-03-31 | Dispositifs del verticaux à film de support métallique |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US118317 | 2002-04-09 | ||
US10/118,317 US8294172B2 (en) | 2002-04-09 | 2002-04-09 | Method of fabricating vertical devices using a metal support film |
PCT/US2003/009504 WO2003088320A2 (fr) | 2002-04-09 | 2003-03-31 | Procede de fabrication de dispositifs verticaux au moyen d'un film support metallique |
Related Child Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19158965.4A Division EP3518296A1 (fr) | 2002-04-09 | 2003-03-31 | Dispositifs del verticaux à film de support métallique |
EP13174570.5A Division EP2648236B1 (fr) | 2002-04-09 | 2003-03-31 | Dispositifs verticaux émetteurs de lumière comprenant un film de support métallique |
EP13154098.1A Division EP2592664B1 (fr) | 2002-04-09 | 2003-03-31 | Dispositif semi-conducteur émetteur de lumière à topologie verticale |
EP13154098.1 Division-Into | 2013-02-05 | ||
EP13174570.5 Division-Into | 2013-07-01 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1502284A2 EP1502284A2 (fr) | 2005-02-02 |
EP1502284A4 true EP1502284A4 (fr) | 2010-10-06 |
EP1502284B1 EP1502284B1 (fr) | 2013-08-07 |
Family
ID=28674401
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03728297.7A Expired - Lifetime EP1502284B1 (fr) | 2002-04-09 | 2003-03-31 | Procede de fabrication de dispositifs verticaux au moyen d'un film support metallique |
EP19158965.4A Withdrawn EP3518296A1 (fr) | 2002-04-09 | 2003-03-31 | Dispositifs del verticaux à film de support métallique |
EP13154098.1A Expired - Lifetime EP2592664B1 (fr) | 2002-04-09 | 2003-03-31 | Dispositif semi-conducteur émetteur de lumière à topologie verticale |
EP13174570.5A Expired - Lifetime EP2648236B1 (fr) | 2002-04-09 | 2003-03-31 | Dispositifs verticaux émetteurs de lumière comprenant un film de support métallique |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19158965.4A Withdrawn EP3518296A1 (fr) | 2002-04-09 | 2003-03-31 | Dispositifs del verticaux à film de support métallique |
EP13154098.1A Expired - Lifetime EP2592664B1 (fr) | 2002-04-09 | 2003-03-31 | Dispositif semi-conducteur émetteur de lumière à topologie verticale |
EP13174570.5A Expired - Lifetime EP2648236B1 (fr) | 2002-04-09 | 2003-03-31 | Dispositifs verticaux émetteurs de lumière comprenant un film de support métallique |
Country Status (6)
Country | Link |
---|---|
US (15) | US8294172B2 (fr) |
EP (4) | EP1502284B1 (fr) |
JP (3) | JP2005522875A (fr) |
KR (1) | KR100880631B1 (fr) |
AU (1) | AU2003233447A1 (fr) |
WO (1) | WO2003088320A2 (fr) |
Families Citing this family (152)
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US7067849B2 (en) * | 2001-07-17 | 2006-06-27 | Lg Electronics Inc. | Diode having high brightness and method thereof |
US6949395B2 (en) | 2001-10-22 | 2005-09-27 | Oriol, Inc. | Method of making diode having reflective layer |
US7148520B2 (en) | 2001-10-26 | 2006-12-12 | Lg Electronics Inc. | Diode having vertical structure and method of manufacturing the same |
TWI226139B (en) | 2002-01-31 | 2005-01-01 | Osram Opto Semiconductors Gmbh | Method to manufacture a semiconductor-component |
US8294172B2 (en) * | 2002-04-09 | 2012-10-23 | Lg Electronics Inc. | Method of fabricating vertical devices using a metal support film |
US20040140474A1 (en) * | 2002-06-25 | 2004-07-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device, method for fabricating the same and method for bonding the same |
US6841802B2 (en) | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
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