DE69526543T2 - Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren - Google Patents

Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren

Info

Publication number
DE69526543T2
DE69526543T2 DE69526543T DE69526543T DE69526543T2 DE 69526543 T2 DE69526543 T2 DE 69526543T2 DE 69526543 T DE69526543 T DE 69526543T DE 69526543 T DE69526543 T DE 69526543T DE 69526543 T2 DE69526543 T2 DE 69526543T2
Authority
DE
Germany
Prior art keywords
lead
support
frame
line
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69526543T
Other languages
German (de)
English (en)
Other versions
DE69526543D1 (de
Inventor
Tetsuya Otsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of DE69526543D1 publication Critical patent/DE69526543D1/de
Application granted granted Critical
Publication of DE69526543T2 publication Critical patent/DE69526543T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/121—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE69526543T 1994-07-13 1995-06-21 Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren Expired - Fee Related DE69526543T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18385494 1994-07-13
JP09812795A JP3509274B2 (ja) 1994-07-13 1995-03-30 樹脂封止型半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69526543D1 DE69526543D1 (de) 2002-06-06
DE69526543T2 true DE69526543T2 (de) 2002-10-31

Family

ID=26439327

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69526543T Expired - Fee Related DE69526543T2 (de) 1994-07-13 1995-06-21 Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren

Country Status (7)

Country Link
US (1) US5633529A (https=)
EP (1) EP0693779B1 (https=)
JP (1) JP3509274B2 (https=)
KR (1) KR100386052B1 (https=)
DE (1) DE69526543T2 (https=)
SG (1) SG65533A1 (https=)
TW (1) TW293940B (https=)

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JP3542677B2 (ja) * 1995-02-27 2004-07-14 セイコーエプソン株式会社 樹脂封止型半導体装置およびその製造方法
JP3309686B2 (ja) * 1995-03-17 2002-07-29 セイコーエプソン株式会社 樹脂封止型半導体装置及びその製造方法
JPH0964244A (ja) * 1995-08-17 1997-03-07 Hitachi Ltd 半導体装置およびその製造方法
US5757070A (en) * 1995-10-24 1998-05-26 Altera Corporation Integrated circuit package
EP0848423B1 (en) * 1996-07-03 2006-03-01 Seiko Epson Corporation Resin-encapsulated semiconductor device and method of manufacturing the same
JPH11274196A (ja) * 1998-03-26 1999-10-08 Seiko Epson Corp 半導体装置の製造方法およびモールドシステム並びに半導体装置
US6977214B2 (en) * 1998-12-11 2005-12-20 Micron Technology, Inc. Die paddle clamping method for wire bond enhancement
US6455354B1 (en) 1998-12-30 2002-09-24 Micron Technology, Inc. Method of fabricating tape attachment chip-on-board assemblies
US6212077B1 (en) 1999-01-25 2001-04-03 International Business Machines Corporation Built-in inspection template for a printed circuit
WO2000074131A1 (en) * 1999-05-31 2000-12-07 Infineon Technologies A.G. A method of assembling a semiconductor device package
JP2000349221A (ja) 1999-06-02 2000-12-15 Sharp Corp リードフレームおよびそれを用いた半導体デバイス
MY133357A (en) * 1999-06-30 2007-11-30 Hitachi Ltd A semiconductor device and a method of manufacturing the same
JP2001230360A (ja) * 2000-02-18 2001-08-24 Hitachi Ltd 半導体集積回路装置およびその製造方法
US6688353B1 (en) 2000-03-31 2004-02-10 Bridgestone/Firestone North American Tire, Llc Attachment patch for mounting an electronic monitoring device to the inside of a pneumatic tire
CN1265451C (zh) * 2000-09-06 2006-07-19 三洋电机株式会社 半导体装置及其制造方法
US6838751B2 (en) * 2002-03-06 2005-01-04 Freescale Semiconductor Inc. Multi-row leadframe
US7309447B2 (en) * 2003-02-03 2007-12-18 Tessera, Inc. Method for making a microelectronic package using pre-patterned, reusable mold and method for making the mold
US20050285281A1 (en) * 2004-06-29 2005-12-29 Simmons Asher L Pad-limited integrated circuit
US20070200225A1 (en) * 2006-02-28 2007-08-30 Ruzaini Ibrahim Heat sink for semiconductor package
JP5132070B2 (ja) * 2006-03-31 2013-01-30 オンセミコンダクター・トレーディング・リミテッド 回路装置およびその製造方法
JP2008300492A (ja) * 2007-05-30 2008-12-11 Rohm Co Ltd 半導体装置
US8643172B2 (en) 2007-06-08 2014-02-04 Freescale Semiconductor, Inc. Heat spreader for center gate molding
US20110012257A1 (en) * 2009-07-14 2011-01-20 Freescale Semiconductor, Inc Heat spreader for semiconductor package
JP6111973B2 (ja) * 2013-10-15 2017-04-12 株式会社デンソー 半導体装置

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US3290564A (en) * 1963-02-26 1966-12-06 Texas Instruments Inc Semiconductor device
US3965277A (en) * 1972-05-09 1976-06-22 Massachusetts Institute Of Technology Photoformed plated interconnection of embedded integrated circuit chips
JPS52124865A (en) * 1976-04-13 1977-10-20 Sharp Corp Semiconductor device
JPS54124678A (en) * 1978-03-20 1979-09-27 Nec Corp Lead frame
JPS56122134A (en) * 1980-02-29 1981-09-25 Toshiba Corp Resin-sealed type semiconductor device
JPS5812341A (ja) * 1981-07-16 1983-01-24 Toshiba Corp 半導体装置
JPS59207645A (ja) * 1983-05-11 1984-11-24 Toshiba Corp 半導体装置およびリ−ドフレ−ム
EP0164794B1 (en) * 1984-06-14 1990-07-25 Advanced Micro Devices, Inc. Multi-layer heat sinking integrated circuit package
JPS61166051A (ja) * 1985-01-17 1986-07-26 Matsushita Electronics Corp 樹脂封止型半導体装置
JPS6297358A (ja) * 1985-10-23 1987-05-06 Mitsubishi Electric Corp 樹脂封止形半導体集積回路装置
US4684975A (en) * 1985-12-16 1987-08-04 National Semiconductor Corporation Molded semiconductor package having improved heat dissipation
JPS63179557A (ja) * 1987-01-20 1988-07-23 Nec Corp 半導体装置用リ−ドフレ−ム
JPS63200554A (ja) * 1987-02-16 1988-08-18 Nec Corp 半導体装置
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US4942497A (en) * 1987-07-24 1990-07-17 Nec Corporation Cooling structure for heat generating electronic components mounted on a substrate
JP2532041B2 (ja) * 1987-10-05 1996-09-11 新光電気工業株式会社 半導体装置用リ―ドフレ―ム
US5050040A (en) * 1988-10-21 1991-09-17 Texas Instruments Incorporated Composite material, a heat-dissipating member using the material in a circuit system, the circuit system
US5157478A (en) * 1989-04-19 1992-10-20 Mitsubishi Denki Kabushiki Kaisha Tape automated bonding packaged semiconductor device incorporating a heat sink
JPH02307251A (ja) * 1989-05-22 1990-12-20 Nec Corp 樹脂封止型半導体装置
US5278101A (en) * 1989-06-28 1994-01-11 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
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JPH0719876B2 (ja) * 1989-12-04 1995-03-06 株式会社東芝 半導体装置
JP2517691B2 (ja) * 1990-01-29 1996-07-24 三菱電機株式会社 半導体装置及びその製造方法
JPH0410558A (ja) * 1990-04-27 1992-01-14 Hitachi Ltd 放熱体付き半導体装置
JPH0411758A (ja) * 1990-04-28 1992-01-16 Mitsubishi Electric Corp 半導体装置
JPH0427145A (ja) * 1990-05-22 1992-01-30 Seiko Epson Corp 半導体装置
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Also Published As

Publication number Publication date
US5633529A (en) 1997-05-27
EP0693779B1 (en) 2002-05-02
JP3509274B2 (ja) 2004-03-22
TW293940B (https=) 1996-12-21
DE69526543D1 (de) 2002-06-06
JPH0883876A (ja) 1996-03-26
HK1013888A1 (en) 1999-09-10
EP0693779A3 (en) 1997-01-08
KR960005972A (ko) 1996-02-23
KR100386052B1 (ko) 2003-08-09
EP0693779A2 (en) 1996-01-24
SG65533A1 (en) 1999-06-22

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee