DE10062232A1 - Halbleitervorrichtung und Verfahren zu deren Herstellung - Google Patents

Halbleitervorrichtung und Verfahren zu deren Herstellung

Info

Publication number
DE10062232A1
DE10062232A1 DE10062232A DE10062232A DE10062232A1 DE 10062232 A1 DE10062232 A1 DE 10062232A1 DE 10062232 A DE10062232 A DE 10062232A DE 10062232 A DE10062232 A DE 10062232A DE 10062232 A1 DE10062232 A1 DE 10062232A1
Authority
DE
Germany
Prior art keywords
soi
semiconductor device
regions
group
areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE10062232A
Other languages
German (de)
English (en)
Inventor
Shigenobu Maeda
Yasuo Yamaguchi
Yuuichi Hirano
Takashi Ipposhi
Takuji Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE10062232A1 publication Critical patent/DE10062232A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE10062232A 2000-04-19 2000-12-14 Halbleitervorrichtung und Verfahren zu deren Herstellung Ceased DE10062232A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000117720A JP4776752B2 (ja) 2000-04-19 2000-04-19 半導体装置

Publications (1)

Publication Number Publication Date
DE10062232A1 true DE10062232A1 (de) 2001-12-20

Family

ID=18628989

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10062232A Ceased DE10062232A1 (de) 2000-04-19 2000-12-14 Halbleitervorrichtung und Verfahren zu deren Herstellung

Country Status (6)

Country Link
US (2) US6452249B1 (enExample)
JP (1) JP4776752B2 (enExample)
KR (1) KR100404831B1 (enExample)
DE (1) DE10062232A1 (enExample)
FR (1) FR2808122B1 (enExample)
TW (1) TW508794B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
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WO2003061010A3 (en) * 2002-01-11 2004-01-22 Microtune San Diego Inc Integrated ground shield
DE102012018013A1 (de) * 2012-09-12 2014-03-13 X-Fab Semiconductor Foundries Ag Spiralförmige, integrierbare Spulen mit zentrischen Anschlüssen in planarer grabenisolierter Siliziumhalbleitertechnologie

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WO2003061010A3 (en) * 2002-01-11 2004-01-22 Microtune San Diego Inc Integrated ground shield
US6744129B2 (en) 2002-01-11 2004-06-01 Microtune (San Diego), Inc. Integrated ground shield
DE102012018013A1 (de) * 2012-09-12 2014-03-13 X-Fab Semiconductor Foundries Ag Spiralförmige, integrierbare Spulen mit zentrischen Anschlüssen in planarer grabenisolierter Siliziumhalbleitertechnologie
DE102012018013B4 (de) * 2012-09-12 2014-09-18 X-Fab Semiconductor Foundries Ag Spiralförmige, integrierbare Spulen mit zentrischen Anschlüssen in planarer grabenisolierter Siliziumhalbleitertechnologie

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TW508794B (en) 2002-11-01
FR2808122A1 (fr) 2001-10-26
KR20010098377A (ko) 2001-11-08
US6452249B1 (en) 2002-09-17
US20020190349A1 (en) 2002-12-19
KR100404831B1 (ko) 2003-11-07
JP2001308273A (ja) 2001-11-02
FR2808122B1 (fr) 2003-10-24
US6611041B2 (en) 2003-08-26

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