KR100404831B1 - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR100404831B1
KR100404831B1 KR10-2000-0077452A KR20000077452A KR100404831B1 KR 100404831 B1 KR100404831 B1 KR 100404831B1 KR 20000077452 A KR20000077452 A KR 20000077452A KR 100404831 B1 KR100404831 B1 KR 100404831B1
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South Korea
Prior art keywords
soi
region
oxide film
shield
semiconductor device
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Expired - Fee Related
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KR10-2000-0077452A
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English (en)
Korean (ko)
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KR20010098377A (ko
Inventor
마에다시게노부
야마구찌야스오
히라노유우이찌
입뽀시다까시
마쯔모또다꾸지
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미쓰비시덴키 가부시키가이샤
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Publication of KR20010098377A publication Critical patent/KR20010098377A/ko
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Publication of KR100404831B1 publication Critical patent/KR100404831B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR10-2000-0077452A 2000-04-19 2000-12-16 반도체 장치 및 그 제조 방법 Expired - Fee Related KR100404831B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000117720A JP4776752B2 (ja) 2000-04-19 2000-04-19 半導体装置
JP2000-117720 2000-04-19

Publications (2)

Publication Number Publication Date
KR20010098377A KR20010098377A (ko) 2001-11-08
KR100404831B1 true KR100404831B1 (ko) 2003-11-07

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KR10-2000-0077452A Expired - Fee Related KR100404831B1 (ko) 2000-04-19 2000-12-16 반도체 장치 및 그 제조 방법

Country Status (6)

Country Link
US (2) US6452249B1 (enExample)
JP (1) JP4776752B2 (enExample)
KR (1) KR100404831B1 (enExample)
DE (1) DE10062232A1 (enExample)
FR (1) FR2808122B1 (enExample)
TW (1) TW508794B (enExample)

Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6407441B1 (en) * 1997-12-29 2002-06-18 Texas Instruments Incorporated Integrated circuit and method of using porous silicon to achieve component isolation in radio frequency applications
JP4969715B2 (ja) * 2000-06-06 2012-07-04 ルネサスエレクトロニクス株式会社 半導体装置
JP2002110908A (ja) * 2000-09-28 2002-04-12 Toshiba Corp スパイラルインダクタおよびこれを備える半導体集積回路装置の製造方法
JP2002164441A (ja) * 2000-11-27 2002-06-07 Matsushita Electric Ind Co Ltd 高周波スイッチ回路装置
JP2002198490A (ja) * 2000-12-26 2002-07-12 Toshiba Corp 半導体装置
JP3579000B2 (ja) * 2001-04-05 2004-10-20 シャープ株式会社 半導体装置
US6864558B2 (en) * 2001-05-17 2005-03-08 Broadcom Corporation Layout technique for C3MOS inductive broadbanding
JP4176342B2 (ja) * 2001-10-29 2008-11-05 川崎マイクロエレクトロニクス株式会社 半導体装置およびそのレイアウト方法
US6744129B2 (en) * 2002-01-11 2004-06-01 Microtune (San Diego), Inc. Integrated ground shield
JP4274730B2 (ja) * 2002-01-30 2009-06-10 株式会社ルネサステクノロジ 半導体集積回路装置
JP4355128B2 (ja) * 2002-07-04 2009-10-28 富士通マイクロエレクトロニクス株式会社 半導体装置およびその製造方法
KR20040011016A (ko) * 2002-07-26 2004-02-05 동부전자 주식회사 알에프 반도체소자 제조방법
JP2004104102A (ja) 2002-08-21 2004-04-02 Seiko Epson Corp 半導体装置及びその製造方法、回路基板並びに電子機器
TWI300617B (en) * 2002-11-15 2008-09-01 Via Tech Inc Low substrate loss inductor
US7064411B2 (en) * 2003-02-04 2006-06-20 Mitsubishi Denki Kabushiki Kaisha Spiral inductor and transformer
US20040195650A1 (en) * 2003-04-04 2004-10-07 Tsung-Ju Yang High-Q inductor device with a shielding pattern embedded in a substrate
JPWO2004107444A1 (ja) * 2003-05-29 2006-07-20 三菱電機株式会社 半導体装置
US7750413B2 (en) * 2003-06-16 2010-07-06 Nec Corporation Semiconductor device and method for manufacturing same
JP4651920B2 (ja) * 2003-07-15 2011-03-16 ルネサスエレクトロニクス株式会社 半導体装置
SE0302107D0 (sv) * 2003-07-18 2003-07-18 Infineon Technologies Ag Electromagnetic device and method of operating the same
US6936764B2 (en) * 2003-08-12 2005-08-30 International Business Machines Corporation Three dimensional dynamically shielded high-Q BEOL metallization
EP1553812A3 (fr) * 2003-12-11 2013-04-03 STMicroelectronics S.A. Puce à semiconducteur et circuit comprenant une inductance blindée
JP2005183686A (ja) * 2003-12-19 2005-07-07 Renesas Technology Corp 半導体装置およびその製造方法
US20050181572A1 (en) * 2004-02-13 2005-08-18 Verhoeven Tracy B. Method for acoustically isolating an acoustic resonator from a substrate
US7154161B1 (en) * 2004-04-16 2006-12-26 Newport Fab, Llc Composite ground shield for passive components in a semiconductor die
JP5025095B2 (ja) * 2004-05-07 2012-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4768972B2 (ja) * 2004-05-31 2011-09-07 ルネサスエレクトロニクス株式会社 インダクタ
US7118986B2 (en) * 2004-06-16 2006-10-10 International Business Machines Corporation STI formation in semiconductor device including SOI and bulk silicon regions
KR100632464B1 (ko) * 2004-08-03 2006-10-09 삼성전자주식회사 수동 소자 쉴드 구조를 포함하는 집적 회로 및 그 제조방법
US7663205B2 (en) * 2004-08-03 2010-02-16 Samsung Electronics Co., Ltd. Integrated circuit devices including a dummy gate structure below a passive electronic element
JP2006059959A (ja) * 2004-08-19 2006-03-02 Oki Electric Ind Co Ltd 半導体装置、及び半導体装置の製造方法
JP4175650B2 (ja) * 2004-08-26 2008-11-05 シャープ株式会社 半導体装置の製造方法
JP4795667B2 (ja) * 2004-11-05 2011-10-19 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2006186034A (ja) * 2004-12-27 2006-07-13 Toshiba Corp 半導体装置
US8749063B2 (en) * 2005-01-28 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US7501690B2 (en) * 2005-05-09 2009-03-10 International Business Machines Corporation Semiconductor ground shield method
JP4175393B2 (ja) 2005-06-23 2008-11-05 セイコーエプソン株式会社 半導体装置および昇圧回路
US7368668B2 (en) * 2006-02-03 2008-05-06 Freescale Semiconductor Inc. Ground shields for semiconductors
GB2439598A (en) * 2006-06-30 2008-01-02 X Fab Uk Ltd CMOS circuit with high voltage and high frequency transistors
US7531407B2 (en) 2006-07-18 2009-05-12 International Business Machines Corporation Semiconductor integrated circuit devices having high-Q wafer backside inductors and methods of fabricating same
US20080029854A1 (en) * 2006-08-03 2008-02-07 United Microelectronics Corp. Conductive shielding pattern and semiconductor structure with inductor device
US7952444B2 (en) * 2006-08-08 2011-05-31 Agency For Science, Technology And Research CMOS power oscillator with frequency modulation
US7829425B1 (en) * 2006-08-15 2010-11-09 National Semiconductor Corporation Apparatus and method for wafer level fabrication of high value inductors on semiconductor integrated circuits
US7489218B2 (en) * 2007-01-24 2009-02-10 Via Technologies, Inc. Inductor structure
US8860544B2 (en) * 2007-06-26 2014-10-14 Mediatek Inc. Integrated inductor
KR101120508B1 (ko) * 2007-08-22 2012-02-29 (주) 와이팜 간섭 현상을 줄이기 위한 레이아웃 구조
US8492872B2 (en) * 2007-10-05 2013-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. On-chip inductors with through-silicon-via fence for Q improvement
US7598588B2 (en) 2007-10-26 2009-10-06 Hvvi Semiconductors, Inc Semiconductor structure and method of manufacture
TWI349362B (en) * 2007-12-07 2011-09-21 Realtek Semiconductor Corp Integrated inductor
TWI338562B (en) * 2007-12-27 2011-03-01 Unimicron Technology Corp Circuit board and process thereof
JP4609497B2 (ja) * 2008-01-21 2011-01-12 ソニー株式会社 固体撮像装置とその製造方法、及びカメラ
US8559186B2 (en) * 2008-04-03 2013-10-15 Qualcomm, Incorporated Inductor with patterned ground plane
US20090273907A1 (en) * 2008-04-30 2009-11-05 Unimicron Technology Corp. Circuit board and process thereof
US20100019300A1 (en) * 2008-06-25 2010-01-28 The Trustees Of Columbia University In The City Of New York Multilayer integrated circuit having an inductor in stacked arrangement with a distributed capacitor
EP2297751B1 (en) * 2008-07-02 2013-02-13 Nxp B.V. Planar, monolithically integrated coil
JP5478166B2 (ja) * 2008-09-11 2014-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPWO2010064412A1 (ja) * 2008-12-04 2012-05-10 日本電気株式会社 バイアス回路、バイアス回路の製造方法
US8385548B2 (en) * 2009-02-17 2013-02-26 Nucrypt Llc System and method for entangled photons generation and measurement
US20100295150A1 (en) * 2009-05-22 2010-11-25 Chan Kuei-Ti Semiconductor device with oxide define dummy feature
US8089126B2 (en) * 2009-07-22 2012-01-03 International Business Machines Corporation Method and structures for improving substrate loss and linearity in SOI substrates
CN102576605B (zh) * 2009-11-17 2016-01-20 马维尔国际贸易有限公司 接地屏蔽电容器
JP5486376B2 (ja) * 2010-03-31 2014-05-07 ルネサスエレクトロニクス株式会社 半導体装置
US9142342B2 (en) * 2010-05-17 2015-09-22 Ronald Lambert Haner Compact-area capacitive plates for use with spiral inductors having more than one turn
DE102010039156A1 (de) * 2010-08-10 2012-02-16 Robert Bosch Gmbh Verfahren zum Herstellen einer elektrischen Schaltung und elektrische Schaltung
US9087840B2 (en) * 2010-11-01 2015-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Slot-shielded coplanar strip-line compatible with CMOS processes
US8564092B2 (en) * 2011-02-25 2013-10-22 National Semiconductor Corporation Power convertor device and construction methods
JP5394443B2 (ja) * 2011-07-07 2014-01-22 ルネサスエレクトロニクス株式会社 半導体装置
CN102638113B (zh) * 2012-04-11 2014-08-27 华中科技大学 一种磁耦合谐振装置
DE102012018013B4 (de) * 2012-09-12 2014-09-18 X-Fab Semiconductor Foundries Ag Spiralförmige, integrierbare Spulen mit zentrischen Anschlüssen in planarer grabenisolierter Siliziumhalbleitertechnologie
CN102938400B (zh) * 2012-11-22 2017-05-31 上海集成电路研发中心有限公司 一种电感结构
US9607942B2 (en) * 2013-10-18 2017-03-28 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device with patterned ground shielding
US9355972B2 (en) 2014-03-04 2016-05-31 International Business Machines Corporation Method for making a dielectric region in a bulk silicon substrate providing a high-Q passive resonator
US9654094B2 (en) 2014-03-12 2017-05-16 Kabushiki Kaisha Toshiba Semiconductor switch circuit and semiconductor substrate
JP2015173227A (ja) * 2014-03-12 2015-10-01 株式会社東芝 半導体スイッチ及び半導体基板
JP5968968B2 (ja) * 2014-09-19 2016-08-10 ルネサスエレクトロニクス株式会社 半導体装置
US9583554B1 (en) 2014-12-23 2017-02-28 Altera Corporation Adjustable ground shielding circuitry
US9484312B2 (en) * 2015-01-20 2016-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Inductor shielding structure, integrated circuit including the same and method of forming the integrated circuit
DE102015211087B4 (de) 2015-06-17 2019-12-05 Soitec Verfahren zur Herstellung eines Hochwiderstands-Halbleiter-auf-Isolator-Substrates
TWI587473B (zh) * 2016-01-28 2017-06-11 瑞昱半導體股份有限公司 圖案式接地防護層
CN107039143B (zh) * 2016-02-03 2019-10-11 瑞昱半导体股份有限公司 图案式接地防护层
US10566409B2 (en) * 2016-05-10 2020-02-18 Dumitru Nicolae LESENCO Integrated quantized inductor and fabrication method thereof
JP2018026475A (ja) * 2016-08-10 2018-02-15 ルネサスエレクトロニクス株式会社 半導体装置
US10217703B2 (en) * 2017-01-03 2019-02-26 Xilinx, Inc. Circuits for and methods of implementing an inductor and a pattern ground shield in an integrated circuit
JP2019220646A (ja) * 2018-06-22 2019-12-26 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2020013902A (ja) * 2018-07-18 2020-01-23 株式会社東海理化電機製作所 半導体装置及びその製造方法
JP2022043369A (ja) * 2018-12-26 2022-03-16 ソニーセミコンダクタソリューションズ株式会社 半導体装置および電子機器
KR20210085421A (ko) * 2019-12-30 2021-07-08 에스케이하이닉스 주식회사 반도체 장치
FR3108443B1 (fr) * 2020-03-18 2023-12-29 Commissariat Energie Atomique Substrat rf avec jonctions ayant un agencement ameliore
DE102020208054A1 (de) * 2020-06-29 2021-12-30 Siemens Aktiengesellschaft Elektronikmodul
US11588056B2 (en) 2020-08-13 2023-02-21 Globalfoundries U.S. Inc. Structure with polycrystalline active region fill shape(s), and related method
US11152394B1 (en) 2020-08-13 2021-10-19 Globalfoundries U.S. Inc. Structure with polycrystalline isolation region below polycrystalline fill shape(s) and selective active device(s), and related method
US12426284B2 (en) * 2022-03-10 2025-09-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with inductive component and method of forming
JP7545503B2 (ja) * 2023-02-08 2024-09-04 合肥晶合集成電路股▲ふん▼有限公司 半導体デバイス

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10321802A (ja) * 1997-05-22 1998-12-04 Toshiba Corp インダクタ素子
KR19990076525A (ko) * 1998-03-11 1999-10-15 아끼구사 나오유끼 반도체기판상에 형성되는 인덕턴스소자
JPH11297934A (ja) * 1998-04-10 1999-10-29 Nec Corp 半導体装置及びその製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3340177B2 (ja) * 1993-03-12 2002-11-05 株式会社東芝 電界効果型トランジスタ
US5466630A (en) * 1994-03-21 1995-11-14 United Microelectronics Corp. Silicon-on-insulator technique with buried gap
JPH07335441A (ja) * 1994-06-07 1995-12-22 Sony Corp コイル構造
DE4433330C2 (de) * 1994-09-19 1997-01-30 Fraunhofer Ges Forschung Verfahren zur Herstellung von Halbleiterstrukturen mit vorteilhaften Hochfrequenzeigenschaften sowie eine Halbleiterwaferstruktur
JP3582890B2 (ja) * 1995-05-23 2004-10-27 株式会社日立製作所 半導体装置
US5760456A (en) * 1995-12-21 1998-06-02 Grzegorek; Andrew Z. Integrated circuit compatible planar inductors with increased Q
JPH09270515A (ja) 1996-04-01 1997-10-14 Matsushita Electric Ind Co Ltd 半導体装置
DE69738012T2 (de) * 1996-11-26 2007-12-13 Matsushita Electric Industrial Co., Ltd., Kadoma Halbleitervorrichtung und deren Herstellungsverfahren
AU6468198A (en) * 1997-05-02 1998-11-27 Board Of Trustees Of The Leland Stanford Junior University Patterned ground shields for integrated circuit inductors
US6030877A (en) * 1997-10-06 2000-02-29 Industrial Technology Research Institute Electroless gold plating method for forming inductor structures
US6153489A (en) * 1997-12-22 2000-11-28 Electronics And Telecommunications Research Institute Fabrication method of inductor devices using a substrate conversion technique
KR19990070958A (ko) 1998-02-26 1999-09-15 윤종용 반도체 집적회로용 유도성 소자
EP0940849A1 (en) * 1998-03-05 1999-09-08 Interuniversitair Micro-Elektronica Centrum Vzw A low-loss conductive pattern on a substrate and a method for fabrication thereof
EP0966040A1 (en) * 1998-06-19 1999-12-22 International Business Machines Corporation Passive component above isolation trenches
JP2000022085A (ja) * 1998-06-29 2000-01-21 Toshiba Corp 半導体装置及びその製造方法
JP3053613B2 (ja) * 1998-07-13 2000-06-19 インターナショナル・ビジネス・マシーンズ・コーポレイション 集積回路
JP2000077610A (ja) * 1998-09-03 2000-03-14 Hitachi Ltd インダクタ
KR100319743B1 (ko) * 1998-11-24 2002-05-09 오길록 기생 캐패시턴스 및 자장의 간섭을 감소시킬 수 있는 집적소자및 그 제조 방법
FR2802700B1 (fr) * 1999-12-15 2002-07-19 St Microelectronics Sa Structure d'inductance sur substrat semiconducteur
JP2001223331A (ja) * 2000-02-07 2001-08-17 Sony Corp 半導体装置及びその製造方法
JP3488164B2 (ja) * 2000-02-14 2004-01-19 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP4969715B2 (ja) 2000-06-06 2012-07-04 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10321802A (ja) * 1997-05-22 1998-12-04 Toshiba Corp インダクタ素子
KR19990076525A (ko) * 1998-03-11 1999-10-15 아끼구사 나오유끼 반도체기판상에 형성되는 인덕턴스소자
JPH11297934A (ja) * 1998-04-10 1999-10-29 Nec Corp 半導体装置及びその製造方法

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TW508794B (en) 2002-11-01
FR2808122A1 (fr) 2001-10-26
DE10062232A1 (de) 2001-12-20
KR20010098377A (ko) 2001-11-08
US6452249B1 (en) 2002-09-17
US20020190349A1 (en) 2002-12-19
JP2001308273A (ja) 2001-11-02
FR2808122B1 (fr) 2003-10-24
US6611041B2 (en) 2003-08-26

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