CN1249518A - 非易失性半导体存储器件 - Google Patents
非易失性半导体存储器件 Download PDFInfo
- Publication number
- CN1249518A CN1249518A CN99119466A CN99119466A CN1249518A CN 1249518 A CN1249518 A CN 1249518A CN 99119466 A CN99119466 A CN 99119466A CN 99119466 A CN99119466 A CN 99119466A CN 1249518 A CN1249518 A CN 1249518A
- Authority
- CN
- China
- Prior art keywords
- word line
- storage unit
- transistor
- volatile memory
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
Abstract
Description
未被选中的存储单元 | 被选中的存储单元 | |||
控制栅 | 写入“0” | 写入“1” | 写入“0” | 写入“1” |
0 | 0 | 5 | 5 | |
浮置栅 | -1 | +1 | 0 | 2 |
未被选中的存储单元 | 被选中的存储单元 | |||
控制栅 | 写入“0” | 写入“1” | 写入“0” | 写入“1” |
0 | 0 | 0 | 0 | |
浮置栅 | -1 | +1 | 0 | 0 |
Claims (33)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29467698A JP3344331B2 (ja) | 1998-09-30 | 1998-09-30 | 不揮発性半導体記憶装置 |
JP294676/1998 | 1998-09-30 | ||
JP294676/98 | 1998-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1249518A true CN1249518A (zh) | 2000-04-05 |
CN1136581C CN1136581C (zh) | 2004-01-28 |
Family
ID=17810872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991194667A Expired - Fee Related CN1136581C (zh) | 1998-09-30 | 1999-09-29 | 非易失性半导体存储器件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6141250A (zh) |
EP (1) | EP0991080A3 (zh) |
JP (1) | JP3344331B2 (zh) |
KR (1) | KR100359357B1 (zh) |
CN (1) | CN1136581C (zh) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1324695C (zh) * | 2002-05-24 | 2007-07-04 | 海力士半导体有限公司 | 使用源极区和沟道区的闪存单元擦除方案 |
CN100351943C (zh) * | 2001-10-31 | 2007-11-28 | 惠普公司 | 混合阻性交叉点存储单元阵列及其制造方法 |
CN100409368C (zh) * | 2001-06-01 | 2008-08-06 | 旺宏电子股份有限公司 | 单个单元可程序切换器及集成电路 |
CN1389874B (zh) * | 2001-06-01 | 2011-03-30 | 旺宏电子股份有限公司 | 使用非易失性单元的单个单元可编程切换器 |
CN102054532A (zh) * | 2009-10-30 | 2011-05-11 | 宏碁股份有限公司 | 一种使sonos电晶体兼具开关以及记忆体的方法 |
WO2011079780A1 (en) * | 2009-12-26 | 2011-07-07 | Shanghai Xin Hao Micro Electronics Co. Ltd. | Wide bandwidth read and write memory system and method |
CN101965638B (zh) * | 2008-01-18 | 2012-12-05 | 夏普株式会社 | 非易失性随机存取存储器 |
CN103094283A (zh) * | 2011-10-27 | 2013-05-08 | 中芯国际集成电路制造(上海)有限公司 | 8-bit半导体存储单元、制作方法及其存储单元阵列 |
CN103680596A (zh) * | 2012-08-31 | 2014-03-26 | 中国科学院微电子研究所 | 半导体存储器阵列及其访问方法 |
CN103681804A (zh) * | 2012-08-31 | 2014-03-26 | 爱思开海力士有限公司 | 半导体器件、其制造方法及具有该器件的组件与系统 |
CN104517652A (zh) * | 2014-09-30 | 2015-04-15 | 上海华虹宏力半导体制造有限公司 | 改善flash可靠性的方法 |
CN105009219A (zh) * | 2013-03-08 | 2015-10-28 | 株式会社东芝 | 非易失性半导体存储装置及其读取方法 |
US9245592B2 (en) | 2005-11-17 | 2016-01-26 | Altera Corporation | Memory elements with elevated control signal levels for integrated circuits |
CN105609133A (zh) * | 2015-12-25 | 2016-05-25 | 上海华虹宏力半导体制造有限公司 | 存储器及其编程控制方法和编程上拉电路 |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000276890A (ja) * | 1999-03-24 | 2000-10-06 | Nec Corp | 不揮発性半導体記憶装置 |
JP2001028427A (ja) * | 1999-07-14 | 2001-01-30 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
US20030092236A1 (en) * | 2000-01-31 | 2003-05-15 | Danny Shum | Flash memory cell and method to achieve multiple bits per cell |
KR100386611B1 (ko) * | 2000-05-08 | 2003-06-02 | 주식회사 하이닉스반도체 | 플래쉬 메모리 셀의 어레이와 그를 이용한 데이터프로그램방법과 소거방법 |
JP4503809B2 (ja) * | 2000-10-31 | 2010-07-14 | 株式会社東芝 | 半導体記憶装置 |
US6478231B1 (en) * | 2001-06-29 | 2002-11-12 | Hewlett Packard Company | Methods for reducing the number of interconnects to the PIRM memory module |
KR100905634B1 (ko) * | 2002-12-24 | 2009-06-30 | 매그나칩 반도체 유한회사 | 플래시 메모리 장치 |
CN101391972A (zh) | 2003-01-13 | 2009-03-25 | 阿特罗吉尼克斯公司 | 制备普罗布考及其衍生物的酯和醚的方法 |
US7262457B2 (en) * | 2004-01-05 | 2007-08-28 | Ememory Technology Inc. | Non-volatile memory cell |
JP4405292B2 (ja) * | 2004-03-22 | 2010-01-27 | パナソニック株式会社 | 不揮発性半導体記憶装置及びその書き込み方法 |
JP2006024342A (ja) * | 2004-06-08 | 2006-01-26 | Toshiba Corp | 不揮発性半導体記憶装置、不揮発性半導体記憶装置の書き込み方法、メモリカード及びicカード |
US7298646B1 (en) | 2004-08-11 | 2007-11-20 | Altera Corporation | Apparatus for configuring programmable logic devices and associated methods |
JP4703162B2 (ja) * | 2004-10-14 | 2011-06-15 | 株式会社東芝 | 不揮発性半導体記憶装置及びその書き込み方法 |
JP4709523B2 (ja) * | 2004-10-14 | 2011-06-22 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP4709525B2 (ja) * | 2004-10-14 | 2011-06-22 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US7257046B2 (en) * | 2005-06-13 | 2007-08-14 | Atmel Corporation | Memory data access scheme |
US7263006B2 (en) * | 2006-01-26 | 2007-08-28 | Micron Technology, Inc. | Memory block erasing in a flash memory device |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
JP2009266944A (ja) | 2008-04-23 | 2009-11-12 | Toshiba Corp | 三次元積層不揮発性半導体メモリ |
JP5259242B2 (ja) | 2008-04-23 | 2013-08-07 | 株式会社東芝 | 三次元積層不揮発性半導体メモリ |
JP2009266946A (ja) * | 2008-04-23 | 2009-11-12 | Toshiba Corp | 三次元積層不揮発性半導体メモリ |
CN102280138B (zh) * | 2011-03-31 | 2013-07-24 | 西安华芯半导体有限公司 | 具有累积写入特征的存储方法、存储器和存储系统 |
JP2013058276A (ja) | 2011-09-07 | 2013-03-28 | Toshiba Corp | 半導体記憶装置 |
US9082490B2 (en) * | 2013-06-18 | 2015-07-14 | Flashsilicon Incorporation | Ultra-low power programming method for N-channel semiconductor non-volatile memory |
JP5886245B2 (ja) * | 2013-06-27 | 2016-03-16 | 旭化成エレクトロニクス株式会社 | 基準電圧発生回路及び基準電圧発生方法 |
KR102154851B1 (ko) | 2013-08-26 | 2020-09-10 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 그것의 워드라인 전압 인가 방법 |
US9286982B2 (en) * | 2014-08-08 | 2016-03-15 | Silicon Storage Technology, Inc. | Flash memory system with EEPROM functionality |
US9627052B1 (en) | 2015-11-24 | 2017-04-18 | Micron Technology, Inc. | Apparatuses and methods for current limitation in threshold switching memories |
US9847133B2 (en) | 2016-01-19 | 2017-12-19 | Ememory Technology Inc. | Memory array capable of performing byte erase operation |
US10373970B2 (en) | 2016-03-02 | 2019-08-06 | Micron Technology, Inc. | Semiconductor device structures including staircase structures, and related methods and electronic systems |
US9905514B2 (en) | 2016-04-11 | 2018-02-27 | Micron Technology, Inc. | Semiconductor device structures including staircase structures, and related methods and electronic systems |
US11568920B2 (en) | 2017-08-02 | 2023-01-31 | Samsung Electronics Co., Ltd. | Dual row-column major dram |
US11901004B2 (en) * | 2022-04-08 | 2024-02-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory array, memory structure and operation method of memory array |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5955071A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Micro Comput Eng Ltd | 不揮発性半導体装置 |
JPH0777078B2 (ja) * | 1987-01-31 | 1995-08-16 | 株式会社東芝 | 不揮発性半導体メモリ |
US5471422A (en) * | 1994-04-11 | 1995-11-28 | Motorola, Inc. | EEPROM cell with isolation transistor and methods for making and operating the same |
KR100413652B1 (ko) * | 1995-09-11 | 2004-05-27 | 마츠시타 덴끼 산교 가부시키가이샤 | 반도체기억장치및그구동방법 |
US5687118A (en) * | 1995-11-14 | 1997-11-11 | Programmable Microelectronics Corporation | PMOS memory cell with hot electron injection programming and tunnelling erasing |
US5706228A (en) * | 1996-02-20 | 1998-01-06 | Motorola, Inc. | Method for operating a memory array |
KR100206709B1 (ko) * | 1996-09-21 | 1999-07-01 | 윤종용 | 멀티비트 불휘발성 반도체 메모리의 셀 어레이의 구조 및 그의 구동방법 |
JP3999900B2 (ja) * | 1998-09-10 | 2007-10-31 | 株式会社東芝 | 不揮発性半導体メモリ |
-
1998
- 1998-09-30 JP JP29467698A patent/JP3344331B2/ja not_active Expired - Fee Related
-
1999
- 1999-09-24 EP EP99118894A patent/EP0991080A3/en not_active Withdrawn
- 1999-09-29 CN CNB991194667A patent/CN1136581C/zh not_active Expired - Fee Related
- 1999-09-30 KR KR1019990041993A patent/KR100359357B1/ko not_active IP Right Cessation
- 1999-09-30 US US09/409,432 patent/US6141250A/en not_active Expired - Lifetime
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100409368C (zh) * | 2001-06-01 | 2008-08-06 | 旺宏电子股份有限公司 | 单个单元可程序切换器及集成电路 |
CN1389874B (zh) * | 2001-06-01 | 2011-03-30 | 旺宏电子股份有限公司 | 使用非易失性单元的单个单元可编程切换器 |
CN100351943C (zh) * | 2001-10-31 | 2007-11-28 | 惠普公司 | 混合阻性交叉点存储单元阵列及其制造方法 |
CN1324695C (zh) * | 2002-05-24 | 2007-07-04 | 海力士半导体有限公司 | 使用源极区和沟道区的闪存单元擦除方案 |
US9245592B2 (en) | 2005-11-17 | 2016-01-26 | Altera Corporation | Memory elements with elevated control signal levels for integrated circuits |
CN101965638B (zh) * | 2008-01-18 | 2012-12-05 | 夏普株式会社 | 非易失性随机存取存储器 |
CN102054532A (zh) * | 2009-10-30 | 2011-05-11 | 宏碁股份有限公司 | 一种使sonos电晶体兼具开关以及记忆体的方法 |
CN102054532B (zh) * | 2009-10-30 | 2014-07-09 | 宏碁股份有限公司 | 一种使sonos电晶体兼具开关以及记忆体的方法 |
WO2011079780A1 (en) * | 2009-12-26 | 2011-07-07 | Shanghai Xin Hao Micro Electronics Co. Ltd. | Wide bandwidth read and write memory system and method |
CN103094283B (zh) * | 2011-10-27 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 8-bit半导体存储单元、制作方法及其存储单元阵列 |
CN103094283A (zh) * | 2011-10-27 | 2013-05-08 | 中芯国际集成电路制造(上海)有限公司 | 8-bit半导体存储单元、制作方法及其存储单元阵列 |
CN103680596A (zh) * | 2012-08-31 | 2014-03-26 | 中国科学院微电子研究所 | 半导体存储器阵列及其访问方法 |
CN103681804A (zh) * | 2012-08-31 | 2014-03-26 | 爱思开海力士有限公司 | 半导体器件、其制造方法及具有该器件的组件与系统 |
CN103680596B (zh) * | 2012-08-31 | 2017-05-17 | 中国科学院微电子研究所 | 半导体存储器阵列及其访问方法 |
CN103681804B (zh) * | 2012-08-31 | 2018-10-30 | 爱思开海力士有限公司 | 半导体器件、其制造方法及具有该器件的组件与系统 |
CN105009219A (zh) * | 2013-03-08 | 2015-10-28 | 株式会社东芝 | 非易失性半导体存储装置及其读取方法 |
CN104517652A (zh) * | 2014-09-30 | 2015-04-15 | 上海华虹宏力半导体制造有限公司 | 改善flash可靠性的方法 |
CN104517652B (zh) * | 2014-09-30 | 2017-10-24 | 上海华虹宏力半导体制造有限公司 | 改善flash可靠性的方法 |
CN105609133A (zh) * | 2015-12-25 | 2016-05-25 | 上海华虹宏力半导体制造有限公司 | 存储器及其编程控制方法和编程上拉电路 |
Also Published As
Publication number | Publication date |
---|---|
US6141250A (en) | 2000-10-31 |
EP0991080A3 (en) | 2002-01-16 |
JP3344331B2 (ja) | 2002-11-11 |
CN1136581C (zh) | 2004-01-28 |
KR20000023551A (ko) | 2000-04-25 |
KR100359357B1 (ko) | 2002-10-31 |
EP0991080A2 (en) | 2000-04-05 |
JP2000114499A (ja) | 2000-04-21 |
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Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030425 |
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