CN107532297A - 具有漏斗状气体分散通道及气体分配板的原子层沉积腔室 - Google Patents

具有漏斗状气体分散通道及气体分配板的原子层沉积腔室 Download PDF

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CN107532297A
CN107532297A CN201680022766.7A CN201680022766A CN107532297A CN 107532297 A CN107532297 A CN 107532297A CN 201680022766 A CN201680022766 A CN 201680022766A CN 107532297 A CN107532297 A CN 107532297A
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processing chamber
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CN107532297B (zh
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穆罕默德·M·拉希德
斯里尼瓦斯·甘迪科塔
马里奥·丹·桑切斯
简国强
杨义雄
迪帕克·贾达夫
阿什托西·阿咖瓦
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Applied Materials Inc
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Abstract

本文提供用于处理基板的方法与设备。一些实施方式中，基板处理腔室包含：腔室主体；腔室盖组件，所述腔室盖组件具有外壳(housing)，所述外壳包围中央通道，所述中央通道沿着中央轴延伸并具有上部与下部；盖板，所述盖板耦接于所述外壳并具有含轮廓(contoured)的底表面，所述含轮廓的底表面从中央开口向下且向外延伸至所述盖板的周边部，所述中央开口耦接于所述中央通道的下部；以及气体分配板，所述气体分配板配置于所述盖板之下并具有多个缝隙(aperture)，这些缝隙穿过所述气体分配板而配置。

Description

具有漏斗状气体分散通道及气体分配板的原子层沉积腔室
技术领域
本公开内容的实施方式一般涉及原子层沉积的设备与方法。
背景技术
可靠地制造亚微米级(submicron)与更小的特征，对下一世代的半导体器件的超大规模集成电路(VLSI)与特大规模集成电路(ULSI)而言，是一项关键科技。然而，随着逼近电路科技的边缘，VLSI与ULSI技术中的互连件(interconnect)的尺寸的缩小对工艺能力有额外要求。处于VLSI与ULSI技术的心脏地位的多层互连件使用高纵横比特征的精确工艺，比如过孔(via)与其他互连件。可靠形成这些互连件对于VLSI与ULSI的成功与增加个别基板的电路密度与品质的持续努力而言是非常重要的。
随电路密度增加，互连件(比如过孔、沟槽、接触件，与其他特征)的宽度以及之间的介电材料的宽度随之减少，但同时介电层的厚度保持大致恒定，造成了增加的所述特征的高度对宽度的纵横比。许多传统的沉积工艺难以填充纵横比超过4：1的亚微米级结构，特别是难以填充纵横比超过10：1的亚微米级结构。因此，当前已极为致力于形成具有高纵横比的实质地无孔隙与无接缝的亚微米级特征。
原子层沉积(ALD)是在具有高纵横比的特征上沉积材料层所开发的沉积工艺。ALD工艺的一个范例包含气体脉冲的依序导入。例如，气体脉冲的依序导入的一个循环可含有第一反应物气体的脉冲，接着是净化(purge)气体与/或泵抽空(pump evacuation)的脉冲，接着是第二反应物气体的脉冲，再接着是净化气体与/或泵抽空的脉冲。本文所用的用语“气体”被定义为包含单一气体或多种的气体。所述第一反应物与所述第二反应物的单独脉冲的依序导入可造成所述基板的表面上的反应物的单层的交替式自限制(self-limiting)吸附，并因此为每一循环形成材料的单层。所述循环可重复直至沉积材料的所期望的厚度。介于第一反应物气体的脉冲与第二反应物气体的脉冲之间的净化气体与/或泵抽空的脉冲用于降低反应物的气相反应的可能性，所述反应物的气相反应是由于反应物过量残存于所述腔室而造成的。
在一些用于ALD工艺的腔室设计中，前驱物与气体是使用漏斗盖输送的，前驱物经过多个在漏斗形的盖之上的注射器穿过所述漏斗盖而被分配。这些注射器产生注射气体的环形运动，所述注射气体经在所述盖的中心的漏斗剖面被分配。所述气体/ALD前驱物分子的转动惯量将这些分子从中心分配至边缘，而导致改善的均匀沉积。然而，在一些应用中，发明人已观察到，在正被处理的基板的中心附近有圆环形(donut-shaped)的沉积分布曲线(deposition profile)。相信所述圆环形的沉积分布曲线是由所述盖的漏斗形状所导致的，并且能引起客户的集成问题。
因此，发明人已提供用于基板的ALD工艺的改良设备与方法。
发明内容
本文提供用于处理基板的方法与设备。一些实施方式中，基板处理腔室包含：腔室主体；腔室盖组件，所述腔室盖组件具有外壳(housing)，所述外壳包围中央通道，所述中央通道沿着中央轴延伸并具有上部与下部；盖板，所述盖板耦接于所述外壳并具有含轮廓(contoured)的底表面，所述含轮廓的底表面从中央开口向下且向外延伸至所述盖板的周边部，所述中央开口耦接于所述中央通道的下部；以及气体分配板，配置于所述盖板之下并具有多个缝隙(aperture)，这些缝隙穿过所述气体分配板而被配置。
一些实施方式中，基板处理腔室包含：腔室主体；具有外壳的腔室盖组件，所述外壳包围中央通道，所述中央通道沿着中央轴延伸并具有上部与下部；盖板，耦接于所述外壳并具有含轮廓的底表面，所述含轮廓的底表面从中央开口向下且向外延伸至所述盖板的周边部延伸,所述中央开口耦接于所述中央通道的下部；气体分配板，配置于所述盖板之下并具有多个缝隙，这些缝隙穿过所述气体分配板而被配置；流体(fluidly)耦接于所述中央通道的远程等离子体源(RPS)；隔离套环，耦接在所述远程等离子体源与所述外壳之间，其中所述隔离套环具有内通道，所述内通道延伸通过所述隔离套环以流体耦接所述远程等离子体源与所述中央通道；排气导管，所述排气导管在第一端处耦接所述隔离套环，并于第二端处耦接主要泵送通道；以及阀，耦接于所述排气导管以选择性地开启或关闭所述排气导管。
一些实施方式中，处理基板的方法包含：使第一处理气体流入气体分散通道与处理腔室的反应区；使所述第一处理气体流动穿过配置于所述反应区中的气体分配板中的多个缝隙，且流至所述基板上；使清洁气体流入所述气体分散通道与所述反应区；经排气系统排出所述清洁气体；使第二处理气体流入所述气体分散通道与所述反应区；使所述第二处理气体流动穿过所述气体分配板中的所述多个缝隙，且流至所述基板上；将所述清洁气体流入所述气体分散通道与所述反应区；以及经所述排气系统排出所述清洁气体。
本公开内容的其他与进一步实施方式将描述于下。
附图说明
通过参考所附附图所示的本公开内容的说明性实施方式，能理解上文简要概述且在下文将更详细讨论的本公开内容的实施方式。然而，所述附图仅说明本案揭露的典型实施方式，因此不被认为是限制保护范围，因为本案揭露内容可容认其他等效实施方式。
图1描述根据本公开内容的一些实施方式的处理腔室示意视图。
图2描述根据本公开内容的一些实施方式的处理腔室的示意剖面视图。
图3描述根据本公开内容的一些实施方式的盖组件的示意剖面视图。
图4A至图4C描述根据本公开内容的一些实施方式的穿过气体分配板而被配置的缝隙的示意视图图。
图5描述说明根据本公开内容的实施方式的处理基板方法的流程图。
为帮助理解，已尽可能使用相同的元件符号指定这些附图共通的相同元件。这些附图未按比例绘制并且为了清楚起见可被简化。一个实施方式的元件与特征可被有益地并入其他实施方式而无需另外记载。
具体实施方式
本公开内容的实施方式提供设备与方法，所述设备与方法可用于清洁基板处理腔室(比如原子层沉积(ALD)腔室)，并用于在例如ALD工艺的期间沉积材料。实施方式包含基板处理腔室与气体输送系统，包含远程等离子体源与气体分配板。其他实施方式提供用于在ALD工艺期间使用这些气体输送系统来沉积材料的方法。用于并入本文所述设备的处理腔室的范例包含高介电常数(即，高k)与金属ALD沉积腔室，这些腔室可由加州圣塔克拉拉的应用材料公司获得。下文针对处理腔室的叙述为上下文意与范例目的而被提供，并且，不应被解读或认定为限制本公开内容的保护范围。
图1是根据本公开内容的一些实施方式的基板处理腔室(处理腔室100)的示意视图，处理腔室100包含适于ALD工艺的气体输送系统130。图2是处理腔室100的示意剖面视图。处理腔室100包含腔室主体102，腔室主体102具有在腔室主体102内且在腔室盖组件132下方的处理空间。处理腔室100的狭缝阀108提供用于机器人(图中未显示)的进出途径(access)，以将基板110(例如为200mm或300mm的半导体晶圆或玻璃基板)传送到处理腔室100以及从处理腔室100收回基板110。腔室衬垫177沿着所述处理腔室100的壁而被配置，以保护所述腔室免于处理/清洁期间使用的腐蚀性气体的影响。
基板支撑件112在处理腔室100中将基板110支撑在基板接收表面111上。基板支撑件112安装至升举马达114以升起与下降基板支撑件112与设置在基板支撑件上的基板110。连接至升举马达118的升举板116(如图2所示)安装在处理腔室100中以升起与下降升举销120，这些升举销120能够移动地穿过基板支撑件112而被配置。这些升举销120在基板支撑件112表面之上方升起与下降基板110。基板支撑件112可包含真空卡盘(图中未显示)、静电卡盘(图中未显示)、或夹环(图中未显示)用于在沉积工艺中将基板110固定至基板支撑件112。
基板支撑件112的温度可被调整以控制基板110的温度。例如，基板支撑件112可用内嵌的加热元件(例如电阻加热器(图中未显示))来加热，或者可使用辐射热(例如配置于基板支撑件112之上的加热灯(图中未显示))来加热。净化环122可配置于基板支撑件112上以界定净化通道124，净化通道124提供净化气体至基板110的周边部,以防止基板110的周边部上的沉积。
气体输送系统130配置于腔室主体102的上部以提供气体(例如处理气体与/或净化气体)至处理腔室100。真空系统(图中未显示)与泵送通道179连通以从处理腔室100排空任何所期望的气体并且帮助维持处理腔室100内的所期望的气压或气压范围。
在一些实施方式中，腔室盖组件132包含气体分散通道134，气体分散通道134延伸通过腔室盖组件132的中央部。如图1与图2所示，气体分散通道134朝向基板接收表面111垂直延伸并且也沿着气体分散通道134的中央轴133延伸，通过盖板170、并延伸至下表面160。在一些实施方式中，气体分散通道134的上部大致沿着中央轴133呈圆柱形，并且气体分散通道134的下部远离中央轴133而呈锥体(taper)。下表面160的经调整尺寸并塑形以大致覆盖设置在基板支撑件112的基板接收表面111上的基板110。下表面160从盖板170的外边缘朝向气体分散通道134渐缩。气体输送系统130可提供一个或多种气体至气体分散通道134以处理所述基板110。在一些实施方式中，气体输送系统130可以经由一个气体入口耦接于气体分散通道134。在一些实施方式中，例如如图3所示的那样，气体输送系统可以经由多个入口耦接于气体分散通道134。
如图3所绘示，说明通过气体分散通道134的处理气体的流动的环形气流174可含有各种类型的流动模式(flow pattern)。在一些实施方式中，当处理气体通过分散通道时，可以迫使处理气体绕着气体分散通道134的中央轴133周围回转(revolution)。在此类实施方式中，环形气流174可含有各种环形流动模式，比如涡流模式、螺旋(helix)模式、绕轴(spiral)模式、或上述模式的衍生模式。
虽然提供环形气流174对于众多应用为有利的，发明人已发现在一些应用中，环形气流能引起非均匀的处理结果。发明人已观察到，所述气流在靠近正被处理的基板110的中心可引起圆环形的沉积分布曲线。所述圆环形分布曲线可能是由气体分散通道134的漏斗状所导致的。因此，在一些实施方式中，处理腔室100进一步包含气体分配板125，气体分配板具有多个缝隙126，这些缝隙126穿过气体分配板125而被配置。气体分配板125延伸至气体分散通道134的表面，使得从气体分散通道134至基板的唯一路径穿过气体分配板125的多个缝隙126。气体分配板125有利地创造通过气体分配板125的气体的扼流，导致基板110上有更均匀的沉积，并且因此大致消除由气体的转动流所导致的圆环形沉积。
在一些实施方式中，气体分配板125由非腐蚀性陶瓷材料形成，比如，例如铝氧化物或铝氮化物。在一些实施方式中，多个缝隙126的每一个可具有相等的流体传导率。在一些实施方式中，多个缝隙126的密度(比如，每单位面积的缝隙数量或缝隙开口的尺寸)可跨越气体分配板125变化，以在基板110上实现所期望的沉积分布。例如，可在气体分配板125的中心配置较高密度的缝隙126，以相较于基板边缘增加在基板中心的沉积速率，而进一步改善沉积均匀度。
虽然多个缝隙126被描述为圆柱状通孔，但多个缝隙126可具有不同的轮廓。图4A至图4C描述了多个缝隙126的轮廓的不同、非限制性的实施方式。于图4A描述的实施方式中，所述缝隙126是圆柱状通孔，所述圆柱状通孔具有环绕所述缝隙的弯曲边缘402。于图4B描述的所述实施方式中，所述缝隙126是通孔，所述通孔具有朝向所述缝隙中心向内渐缩的上部404、垂直延伸至气体分配板125上表面127的圆柱中央部405、以及从所述缝隙中心向外渐缩的下部406。于图4C描述的实施方式中，所述缝隙126是通孔，所述通孔具有上部408，所述上述具有锥坑孔(countersunk hole)，垂直延伸至气体分配板125上表面127的圆柱中央部409、以及从所述缝隙中心向外渐缩的下部410。可取而代之使用多个缝隙126的其他轮廓，以在基板110处理期间达成最佳沉积均匀度。
不希望被理论所束缚，发明人相信气体分散通道134的直径(所述直径从气体分散通道134的上部到沿着中央轴133的第一点的定值，并且所述直径从所述第一点到气体分散通道134的下部135增加)允许通过气体分散通道134的气体的更少的绝热膨胀，这有助于控制所述环形气流174中所含的处理气体的温度。例如，输送进入气体分散通道134的气体的突然绝热膨胀可能造成所述气体温度的下坠，这可能导致气体冷凝并形成液滴。另一方面，相信逐渐渐缩的气体分散通道134提供更少的气体绝热膨胀。因此，更多的热可传递至所述气体或从所述气体被传递，并且因此所述气体的温度可以更简单地通过控制腔室盖组件132的温度而被控制。气体分散通道134可逐渐地缩并且含有一个或多个渐缩的内表面，比如锥形直表面、内凹表面、外凸表面或上述表面的组合，或可含有一个或多个渐缩的内表面的分段(即，部分渐缩与部分未渐缩)。
如图3所示，气体分散通道134的上部被配置于外壳375的内区域中的插入件300界定。插入件300包含位在插入件300上部的帽302与至少部分界定气体分散通道134的中央通路。帽302延伸超过外壳375以将插入件300保持到位。插入件300与帽302包含多个O形环385，这些O形环385配置于插入件300与外壳375之间，以确保适当密封。插入件300包含多个周边缝隙，当插入件300插入外壳375时，这些周边缝隙形成相对应的多个周边通道360、365、370。多个周边通道360、365、370经由相对应的多个孔340、345、350流体耦接于气体分散通道134。在图3所示的实施方式中，气体输送系统130经由多个气体馈送线路310、315、320耦接于气体分散通道134。气体馈送线路310、315、320流体耦接于多个周边通道360、365、370以将一个或多种气体提供至气体分散通道134。
回到图1与图2，处理腔室100进一步包含腔室清洁系统，所述腔室清洁系统包含远程等离子体源(RPS)190、在一端耦接RPS 190并在相对一端耦接帽302的隔离套环192、耦接于盖板170上表面的加热板198、以及流体耦接于RPS 190的清洁气体(即，净化气体)源197。清洁气体源197可包含任合适合形成等离子体以清洁处理腔室100的气体。在一些实施方式中，例如，清洁气体可以为三氟化氮(NF3)。隔离套环192包含内通道193，内通道193通过配置于帽302中央部的多个孔285流体耦接于气体分散通道134，以使等离子体从RPS 190流动通过气体分散通道134并流入反应区164。加热板198可以由不锈钢形成并且包含多个耐热元件，这些耐热元件分散在所述板的各处。
典型地，在气体输送系统130提供第一气体至气体分散通道134后，清洁气体流动通过气体分散通道134与反应区164，以快速地从气体分散通道134与反应区164净化第一气体。之后，第二气体由气体输送系统130提供至气体分散通道134，并且清洁气体再一次地流动通过气体分散通道134并流至反应区164，以快速地从气体分散通道134与反应区164净化第二气体。然而，添加气体分配板125会堵塞(choke)清洁气体至泵送通道179的流动，并且延长了清洁工艺。就此而言，发明人已并入排气系统180，排气系统180具有排气导管184，排气导管184在第一端186耦接隔离套环192，并且在第二端188耦接泵送通道179。阀182配置于排气导管184中，以选择性地将排气导管184流体耦接至内通道193。在一些实施方式中，例如，阀182可以为具有柱塞(plunger)202的柱塞式阀，所述柱塞202可在第一位置(如图2所示)与第二位置之间移动，柱塞202在所述第一位置将排气导管184流体耦接至内通道193，且柱塞202在所述第二位置将排气导管184与内通道193密封隔绝。每一次当清洁气流动通过气体分散通道134与反应区164，阀182开启并且所述清洁气体快速地排出至泵送通道179。
当处理腔室100的内侧气压超过于RPS 190内侧的气压时，处理气体可向上流至RPS 190并损坏RPS 190。多个孔285用作扼流点以防止处理气体的回流通过内通道193向上流动并进入RPS 190中。隔离套环192可由任何与所用的清洁气体不发生反应的材料形成。在一些实施方式中，当所述清洁气体是NF3时，隔离套环192可由铝形成。在一些实施方式中，隔离套环192与插入件300可由铝形成并且涂覆有涂层以防止隔离套环192与插入件300在使用时被腐蚀性气体腐蚀。例如，所述涂层可由镍或铝氧化物形成。
参照图3，RPS 190在小于或等于约40于或的温度下运作。为求有利地将RPS 190与处理腔室100中所产生的热隔绝，绝热环394配置于隔离套环192与帽302之间。绝热环394由具低热导率的金属形成(例如，低于隔离套环192与帽302的热导率)。另外，O形环385也可配置于隔离套环192与帽302之间，以进一步减低隔离套环192与帽302之间的接触面积。绝热环394与O形环385的组合用作热扼流(thermal choke)，以确保在处理腔室100中产生的热不会负面地影响RPS 190。
在一些实施方式中，当盖板170被加热超过100盖板时，处理腔室100可包含差动泵送线路250以确保任何困在(trapped)O形环385之间的处理气体或副产物被排出至泵送通道179。差动泵送线路250在第一端耦接盖板170且在于所述第一端相对的第二端耦接外壳375。差动泵送线路流体耦接于气体分散通道134与一个或多个通道260，这些通道260在二个或更多个O形环385之间的区域形成。当阀182开启以使气体分散通道134排气时，差动泵送线路排出被困在O形环385之间的气体。
回到图3，腔室盖组件132的下表面160的一部分可从耦接至气体分散通道134的中央开口到腔室盖组件132的周边部向下并向外呈一定轮廓或呈一定角度，以帮助提供来自气体分散通道134的横跨基板110的表面(即，从基板的中心至基板的边缘)的气流的改善的速率分布曲线(velocity profile)。下表面160可含有一个或多个表面，比如直表面、外凸表面、内凹表面或上述表面的组合。在一个范例中，下表面160外凸呈漏斗状。
在一个范例中，下表面160朝基板接收表面111的边缘向下并向外倾斜，以帮助减少在腔室盖组件132的下表面160与基板110之间行进的处理气体的速率变化，同时协助使基板110的表面均匀地暴露在反应物气体中。腔室盖组件132的部件与零件可含有诸如下列的材料，不锈钢、铝、镀镍铝、镍、上述材料的合金、或其他合适的材料。在一个实施方式中，盖板170可从金属被独立地制造、加工(machine)、锻造、或以其他方式制作，所述金属诸如铝、铝合金、钢、不锈钢、上述金属的合金、或上述金属的组合。
在一些实施方式中，气体分散通道134的内表面131与腔室盖组件132之下表面160可含有镜面抛光面以帮助气体沿着气体分散通道134与腔室盖组件132的下表面160流动。
参照图1至图3，在工艺操作中，基板110通过机器人(图中未显示)经由狭缝阀108输送至处理腔室100。基板110通过升举销120与机器人的合作而定位在基板支撑件112上。基板支撑件112升起基板110至与气体分配板125的下表面相对且接近的位置(closeopposition)。第一气流可与第二气流一起或分开(即，脉冲)通过气体输送系统130注入处理腔室100的气体分散通道134。所述第一气流可含有来自净化气源的连续的净化气体的连续流以及来自反应物气源的反应物气体的脉冲，或可含有来自反应物气源的反应物气体的脉冲以及来自净化气源的净化气体的脉冲。所述第二气流可含有来自净化气源的净化气流的连续流以及来自反应物气源的反应物气体的脉冲，或可含有来自反应物气源的反应物气体的脉冲以及来自净化气源的净化气体的脉冲。
所述环形气流174行进通过气体分散通道134，并接着通过气体分配板125中的多个缝隙126。然后所述气体沉积在基板110的表面上。腔室盖组件132的向下倾斜的下表面160帮助减低跨越气体分配板125的表面上的气流的速率变化。过量气体、副产物等流入泵送通道179，然后从处理腔室100排出。在整个工艺操作中，加热板198可加热所述腔室盖组件132至预定温度，来加热已经累积在处理腔室100的壁(或配置在腔室中的处理套件)上的任何固体副产物。其结果为，任何累积的固体副产物皆被汽化。所述汽化的副产物被真空系统(未显示)与泵送通道179抽空。在一些实施方式中，预定温度大于或等于150于度。
图5说明根据本公开内容的一些实施方式的处理基板的方法500。于步骤505，使第一处理气体从气体输送系统130流入气体分散通道134与反应区164中。于步骤510，所述第一处理气体流动通过气体分配板125中的多个缝隙126，并且流至基板110上。于步骤515，清洁气体流入所述气体分散通道134与所述反应区164，以净化所述第一处理气体。于步骤520，所述清洁气体经由所述排气系统180排出。于步骤525，第二处理气体流入气体分散通道134与反应区164。于步骤530，所述第二处理气体流动通过气体分配板125中的多个缝隙126，并且流至基板110上。于步骤535，所述清洁气体流入所述气体分散通道134与所述反应区164，以净化所述第二处理气体。于步骤540，所述清洁气体经由排气系统180排出。
其他适用于原子层沉积的腔室的实施方式并入有一个或多个这些特征。
虽然上述内容述针对本公开内容的一些实施方式，但可在不脱离本公开内容的实施方式的基本范围的情况下，设计其他与进一步的实施方式。

Claims (15)

1.一种基板处理腔室，包括：
腔室主体；
腔室盖组件，所述腔室盖组件具有外壳，所述外壳包围中央通道，所述中央通道沿着中央轴延伸并且具有上部与下部；
盖板，所述盖板耦接于所述外壳并且具有含轮廓的底表面，所述含轮廓的底表面从中央开口向下且向外延伸至所述盖板的周边部，所述中央开口耦接于所述中央通道的所述下部；及
气体分配板，所述气体分配板配置于所述盖板之下，并且具有多个缝隙，所述多个隙缝穿过所述气体分配板而配置。
2.根据权利要求1所述的基板处理腔室，进一步包括：
远程等离子体源，所述远程等离子体源流体耦接于所述中央通道；及
隔离套环，所述隔离套环耦接于所述远程等离子体源与所述外壳之间，其中所述隔离套环具有内通道，所述内通道延伸穿过所述隔离套环，以流体耦接所述远程等离子体源与所述中央通道。
3.根据权利要求2所述的基板处理腔室，进一步包括：
排气导管，所述排气导管在第一端耦接于所述隔离套环，并且在第二端耦接于主要泵送通道；及
阀，所述阀耦接于所述排气导管，以选择性地开启或关闭所述排气导管。
4.根据权利要求1所述的基板处理腔室，其中所述外壳包含内区域；并且所述基板处理腔室进一步包括：
插入件，所述插入件配置在所述内区域中，并且具有至少部分界定所述中央通道的中央通路。
5.根据权利要求4所述的基板处理腔室，进一步包括：
差动泵送线路，所述差动泵送线路在第一端耦接于所述插入件，并且在第二端耦接于所述盖板，
其中所述盖板包含一个或多个通道，所述一个或多个通道配置于二个或更多个O形环之间的所述盖板的区域中，以排出困在这些O形环之间的气体。
6.根据权利要求1至5任一项所述的基板处理腔室，进一步包括：
加热板，所述加热板耦接于所述盖板的上表面，以加热所述盖板至预定温度。
7.根据权利要求1至5任一项所述的基板处理腔室，其中所述多个缝隙的密度跨越所述气体分配板变化。
8.根据权利要求1至5任一项所述的基板处理腔室，其中所述多个缝隙具有等效的流体传导率。
9.根据权利要求1至5任一项所述的基板处理腔室，其中所述气体分配板由非腐蚀性陶瓷材料形成。
10.根据权利要求1至5任一项所述的基板处理腔室，其中所述腔室盖组件的下表面向下倾斜。
11.根据权利要求1至5任一项所述的基板处理腔室，其中所述气体分配板的所述多个缝隙提供从所述中央通道到所述基板处理腔室的空间的唯一气体路径，所述基板处理腔室的空间设置在所述气体分配板的与所述中央通道相对的一侧。
12.根据权利要求1至5任一项所述的基板处理腔室，进一步包括:
加热板，所述加热板耦接于所述盖板的上表面，以加热所述盖板至预定温度，其中所述气体分配板由非腐蚀性陶瓷材料形成，并且其中所述腔室盖组件的下表面向下倾斜。
13.一种处理基板的方法，包括：
使第一处理气体流入腔室盖组件的气体分散通道与处理腔室的反应区；
使所述第一处理气体流动穿过配置于所述反应区中的气体分配板中的多个缝隙并流至所述基板上；
使清洁气体流入所述气体分散通道与所述反应区；
经由排气系统排出所述清洁气体；
使第二处理气体流入所述气体分散通道与所述反应区；
使所述第二处理气体流动穿过所述气体分配板中的所述多个缝隙并且流至所述基板上；
使所述清洁气体流入所述气体分散通道与所述反应区；及
经由所述排气系统排出所述清洁气体。
14.根据权利要求13所述的方法，进一步包括：
加热所述腔室盖组件至预定温度。
15.根据权利要求14所述的方法，其中所述预定温度大于或等于150℃。
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