JP5909484B2 - 短寿命種のためのプラズマ源を組み込んだプロセスチャンバ蓋の設計 - Google Patents
短寿命種のためのプラズマ源を組み込んだプロセスチャンバ蓋の設計 Download PDFInfo
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- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- LIKBJVNGSGBSGK-UHFFFAOYSA-N iron(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Fe+3].[Fe+3] LIKBJVNGSGBSGK-UHFFFAOYSA-N 0.000 description 1
- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 150000002697 manganese compounds Chemical class 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
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- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
110 チャンバ本体
112 基板支持部
114 プロセスチャンバ蓋アセンブリ
116 基板
118 処理容積
120 ヒータ
122 シャワーヘッドアセンブリ
124 第1の電極
128 第2の電極
132 絶縁体
136 遮断プレート
140 ウォーターボックス
144 プラズマキャビティ
145 容量性プラズマ
146 RF電源
148 第1のガス源
149A ガス注入口
149B ガス注入口
150 第1の面
152 第2の面
154 第1の通路
156 第2の通路
158 第2のガス源
159 ガス注入口
160 第1の面
162 第2の面
164 第3の通路
166 凹部
168 第2のガス領域
170 第1の面
172 第2の面
174 凹部
176 第1のガス領域
178 第4の通路
179 流体源
180 真空ポンプ
190A フェライト含有要素
190B フェライト含有要素
190C フェライト含有要素
Claims (15)
- 1又はそれ以上の基板のプラズマ増強処理のためのチャンバであって、
処理容積を定めるチャンバ本体と、
前記処理容積内に配置されて1又はそれ以上の基板を支持するように構成された基板支持部と、
前記基板支持部を覆って配置された処理蓋アセンブリと、
を備え、
前記処理蓋アセンブリは、
プラズマを生成して前記処理容積に1又はそれ以上のラジカル種を供給するように構成されたプラズマキャビティと、
前記処理容積に面する第1の電極の第1の面、
前記第1の面に対向する前記第1の電極の第2の面、及び、
前記第1の電極の第1の面から前記第1の電極の前記第2の面へと延び、前記プラズマキャビティから前記処理容積へ前記1又はそれ以上のラジカル種を送出するように構成された複数の第1の通路、
を有する第1の電極と、
前記プラズマキャビティに面する第2の電極の第1の面、
第2の電極の第1の面に対向する第2の電極の第2の面、
第1の電極の第1の面から第2の電極の第2の面へと延び、前記処理容積へ反応ガスを送出するよう構成された複数の第2の通路、及び、
前記第2の電極の第1の面から前記第2の電極の第2の面へと延び、前記プラズマキャビティにプラズマ生成ガスを送出するよう構成された複数の第3の通路、
を有する、前記第1の電極と実質的に平行な第2の電極と、
前記第1の電極及び前記第2の電極の周縁部近くにおいて前記第1の電極と前記第2の電極の間に配置された絶縁体であって、前記第1の電極、前記第2の電極及び前記絶縁体の間に前記プラズマキャビティを定める絶縁体と、
前記プラズマキャビティの上方に位置し、前記複数の第3の通路を介して前記プラズマキャビティに流体を通すよう結合された第1のガス領域であって、前記複数の第3の通路が、前記第1のガス領域から前記プラズマキャビティへ前記プラズマ生成ガスを送出するようにされている、第1のガス領域と、
前記第1のガス領域と前記プラズマキャビティの間に位置し、前記処理容積に反応性ガスを送出するよう構成された第2のガス領域であって、前記複数の第2の通路を介して前記処理容積に流体を通すよう結合された第2のガス領域と、
前記第2の電極上に位置する遮断プレートであって、
遮断プレートの第1の面、
前記遮断プレートの第1の面に対向する遮断プレートの第2の面、及び、
前記遮断プレートの第1の面から前記遮断プレートの第2の面へ延びる複数の第4の通路、
を有し、前記複数の第4の通路のそれぞれは、前記複数の第3の通路の対応するものと結合され、かつ、前記複数の第3の通路から前記プラズマキャビティへ前記プラズマ生成ガスを送出するよう構成され、前記第2のガス領域が、前記遮断プレートと前記第2の電極の第2の面との間に定められた、遮断プレートと、
を備えることを特徴とするチャンバ。 - 前記処理蓋アセンブリが、前記遮断プレート上に位置するウォーターボックスをさらに備え、前記第1のガス領域が、前記遮断プレートと前記ウォーターボックスの間に定められる、
ことを特徴とする請求項1に記載のチャンバ。 - 前記第2の電極の第1の面から前記第2の電極の第2の面に延びる前記複数の第3の通路の各々が、前記第2の電極の前記第2の面の方向に開いたボアに接続された前記第2の電極の前記第1の面の方向を向いた開口部を有する円錐形チャネルにより定められる、
ことを特徴とする請求項1に記載のチャンバ。 - 前記円錐形チャネルが、20°〜30°の角度を成す、
ことを特徴とする請求項3に記載のチャンバ。 - プラズマ生成ガスのラジカルを処理容積に供給するための処理蓋アセンブリであって、 プラズマを生成して前記処理容積に1又はそれ以上のラジカル種を供給するように構成されたプラズマキャビティと、
第1の電極と、
前記第1の電極と実質的に平行な第2の電極と、
を備え、前記第1の電極は、
前記処理容積に面する前記第1の電極の第1の面から前記第1の電極の第2の面へ延び、前記1又はそれ以上のラジカル種を前記プラズマキャビティから前記処理容積に送出するための複数の第1の通路と、
前記第1の電極の前記第1の面から前記第2の電極の前記第2の面へ延び、前記処理容積に反応ガスを送出するよう構成された複数の第2の通路と、
を有し、前記第2の電極は、前記第2の電極の第1の面から前記第2の電極の第2の面へ延び、前記プラズマキャビティにプラズマ生成ガスを送出するための複数の第3の通路を有し、前記プラズマキャビティは、前記第1の電極と前記第2の電極の間に定められ、前記第2の電極の第1の面は前記プラズマキャビティに面し、
さらに、前記プラズマキャビティの上方に位置し、前記複数の第3の通路を介して前記プラズマキャビティに流体を通すよう結合された第1のガス領域であって、前記複数の第3の通路が、前記第1のガス領域から前記プラズマキャビティへ前記プラズマ生成ガスを送出するようにされている、第1のガス領域と、
前記第1のガス領域と前記プラズマキャビティの間に位置し、前記処理容積に反応性ガスを送出するよう構成された第2のガス領域であって、前記複数の第2の通路を介して前記処理容積に流体を通すよう結合された第2のガス領域と、
前記第2の電極上に配置された遮断プレートと、
を有し、前記第2のガス領域は、前記遮断プレートと前記第2の電極の間に定められ、前記遮断プレートは、前記遮断プレートの第1の面から前記遮断プレートの第2の面へ延びる複数の第4の通路を有し、前記複数の第4の通路のそれぞれは、前記第3の通路の対応するものと結合され、かつ、前記複数の第3の通路から前記プラズマキャビティへ前記プラズマ生成ガスを送出するよう構成されていることを特徴とする処理蓋アセンブリ。 - 前記第1の電極及び前記第2の電極の周縁部近くにおいて前記第1の電極と前記第2の電極の間に配置された、前記プラズマキャビティをさらに定める絶縁体をさらに備える、ことを特徴とする請求項5に記載の処理蓋アセンブリ。
- 前記遮断プレート上に位置するウォーターボックスをさらに備え、前記第1のガス領域が、前記遮断プレートと前記ウォーターボックスの間に定められる、
ことを特徴とする請求項5に記載の処理蓋アセンブリ。 - 前記第2の電極の第1の面から前記第2の電極の第2の面に延びる、前記複数の第3の通路の各々は、前記第2の電極の前記第2の面の方向に開いたボアに接続された前記第2の電極の前記第1の面の方向に向いた開口部を有する円錐形チャネルにより定められる、ことを特徴とする請求項5に記載の処理蓋アセンブリ。
- 前記プラズマ生成ガスを送出するよう構成されたガス源を前記処理蓋アセンブリに結合するガス注入口と、
前記ガス注入口近傍での寄生プラズマの形成又はアーク放電を減少させるために、前記ガス注入口に隣接して配置されたフェライト含有要素と、
をさらに有することを特徴とする請求項1に記載のチャンバ。 - 前記処理蓋アセンブリに結合されたRF(高周波)電源と、
前記処理蓋アセンブリに結合されたプラズマ生成ガス源と、
前記処理蓋アセンブリに結合された反応ガス源と、
をさらに備えることを特徴とする請求項1に記載のチャンバ。 - 前記複数の第2の通路は、前記プラズマキャビティを横切り、前記第2の電極の第1の面を通過して前記第2の電極の第2の面まで延びることを特徴とする請求項1に記載のチャンバ。
- 前記第2の電極はRF(高周波)に結合され、前記第1の電極は接地に結合されていることを特徴とする請求項1に記載のチャンバ。
- 第1のガス源を前記プラズマキャビティに結合するガス注入口と、
前記ガス注入口近傍での寄生プラズマの形成又はアーク放電を減少させるために、前記ガス注入口に隣接して配置されたフェライト含有要素と、
をさらに有することを特徴とする請求項5に記載の処理蓋アセンブリ。 - 前記第2の電極はRF電源に結合され、前記第1の電極は接地に結合されていることを特徴とする請求項5に記載の処理蓋アセンブリ。
- 前記複数の第2の通路は、前記プラズマキャビティを横切り、前記第2の電極の第1の面を通過して前記第2の電極の第2の面まで延びることを特徴とする請求項5に記載の処理蓋アセンブリ。
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