JP2013527319A - 短寿命種のためのプラズマ源を組み込んだプロセスチャンバ蓋の設計 - Google Patents
短寿命種のためのプラズマ源を組み込んだプロセスチャンバ蓋の設計 Download PDFInfo
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- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
Abstract
【選択図】 図1
Description
110 チャンバ本体
112 基板支持部
114 プロセスチャンバ蓋アセンブリ
116 基板
118 処理容積
120 ヒータ
122 シャワーヘッドアセンブリ
124 第1の電極
128 第2の電極
132 絶縁体
136 遮断プレート
140 ウォーターボックス
144 プラズマキャビティ
145 容量性プラズマ
146 RF電源
148 第1のガス源
149A ガス注入口
149B ガス注入口
150 第1の面
152 第2の面
154 第1の通路
156 第2の通路
158 第2のガス源
159 ガス注入口
160 第1の面
162 第2の面
164 第3の通路
166 凹部
168 第2のガス領域
170 第1の面
172 第2の面
174 凹部
176 第1のガス領域
178 第4の通路
179 流体源
180 真空ポンプ
190A フェライト含有要素
190B フェライト含有要素
190C フェライト含有要素
Claims (15)
- 1又はそれ以上の基板のプラズマ増強処理のためのチャンバであって、
処理容積を定めるチャンバ本体と、
前記処理容積内に配置されて1又はそれ以上の基板を支持するように構成された基板支持部と、
プラズマを生成して前記処理容積に1又はそれ以上のラジカル種を供給するように構成されたプラズマキャビティを有する、前記基板支持部を覆って配置された処理蓋アセンブリと、
前記処理蓋アセンブリに結合されたRF(高周波)電源と、
前記処理蓋アセンブリに結合されたプラズマ生成ガス源と、
前記処理蓋アセンブリに結合された反応ガス源と、
を備えることを特徴とするチャンバ。 - 前記処理蓋アセンブリが、
第1の電極と、
前記第1の電極と実質的に平行な第2の電極と、
前記第1の電極及び前記第2の電極の周縁部近くにおいて前記第1の電極と前記第2の電極の間に配置された絶縁体と、
を備え、前記第1の電極が、
前記処理容積に面する前記第1の電極の第1の面と前記第1の電極の第2の面とを結合する、プラズマ含有ガスを前記処理容積に送出するための複数の第1の通路と、
前記第1の電極の前記第1の面を前記第1の電極の前記第2の面に結合する、前記処理容積に反応ガスを送出するための複数の第2の通路と、
を有し、
前記第2の電極が、プラズマキャビティに面する前記第2の電極の第1の面と前記第2の電極の第2の面とを結合する、前記プラズマキャビティにプラズマ生成ガスを送出するための複数の第3の通路を有し、
前記プラズマキャビティが、前記第1の電極、前記第2の電極及び前記絶縁体の間に定められ、前記第2の電極がRF電源に結合され、前記第1の電極が接地に結合される、
ことを特徴とする請求項1に記載のチャンバ。 - 前記処理蓋アセンブリが、
前記プラズマキャビティの上方に位置し、前記複数の第3の通路を介して前記プラズマキャビティに結合された、前記プラズマキャビティに前記プラズマ生成ガスを供給するための第1のガス領域と、
前記第1のガス領域と前記プラズマキャビティの間に位置し、前記複数の第2の通路を介して前記処理容積に結合された、前記処理容積に前駆体ガスを供給するための第2のガス領域と、
を有することを特徴とする請求項2に記載のチャンバ。 - 前記処理蓋アセンブリが、前記第2の電極上に位置する遮断プレートをさらに備え、前記第2のガス領域が、前記遮断プレートと前記第2の電極の間に定められる、
ことを特徴とする請求項3に記載のチャンバ。 - 前記処理蓋アセンブリが、前記遮断プレート上に位置するウォーターボックスをさらに備え、前記第1のガス領域が、前記遮断プレートと前記ウォーターボックスの間に定められる、
ことを特徴とする請求項4に記載のチャンバ。 - 前記遮断プレートが、前記処理容積にプラズマ含有ガスを送出する前記複数の第3の通路に結合するための、前記遮断プレートの第1の面を前記遮断プレートの第2の面に結合する複数の第4の通路を有する、
ことを特徴とする請求項4に記載のチャンバ。 - 前記第2の電極の第1の面を前記第1の電極の第2の面に結合する前記複数の第3の通路の各々が、前記第2の電極の前記第2の面の方向に開いたボアに接続された前記第2の電極の前記第1の面の方向に開いた円錐形チャネルにより定められる、
ことを特徴とする請求項2に記載のチャンバ。 - 前記円錐形チャネルが、約20°〜約30°の角度を成す、
ことを特徴とする請求項7に記載のチャンバ。 - 反応ガスのラジカルを処理容積に供給するための処理蓋アセンブリであって、
第1の電極と、
前記第1の電極と実質的に平行な第2の電極と、
を備え、前記第1の電極が、
前記処理容積に面する前記第1の電極の第1の面と前記第1の電極の第2の面とを結合する、プラズマ含有ガスを前記処理容積に送出するための複数の第1の通路と、
前記第1の電極の前記第1の面を前記第1の電極の前記第2の面に結合する、前記処理容積に前駆体ガスを送出するための複数の第2の通路と、
を有し、前記第2の電極が、プラズマキャビティに面する前記第2の電極の第1の面と前記第2の電極の第2の面とを結合する、前記プラズマキャビティにプラズマ生成ガスを送出するための複数の第3の通路を有し、前記プラズマキャビティが、前記第1の電極と前記第2の電極の間に定められ、前記第2の電極がRF電源に結合され、前記第1の電極が接地に結合される、
ことを特徴とする処理蓋アセンブリ。 - 前記第1の電極及び前記第2の電極の周縁部近くにおいて前記第1の電極と前記第2の電極の間に配置された、前記プラズマキャビティをさらに定める絶縁体をさらに備える、
ことを特徴とする請求項9に記載の処理蓋アセンブリ。 - 前記プラズマキャビティの上方に位置し、前記複数の第3の通路を介して前記プラズマキャビティに結合された、前記プラズマキャビティに前記プラズマ生成ガスを供給するための第1のガス領域と、
前記第1のガス領域と前記プラズマキャビティの間に位置し、前記複数の第2の通路を介して前記処理容積に結合された、前記処理容積に前駆体ガスを供給するための第2のガス領域と、
を有することを特徴とする請求項9に記載の処理蓋アセンブリ。 - 前記第2の電極上に位置する遮断プレートをさらに備え、前記第2のガス領域が、前記遮断プレートと前記第2の電極の間に定められる、
ことを特徴とする請求項11に記載の処理蓋アセンブリ。 - 前記遮断プレート上に位置するウォーターボックスをさらに備え、前記第1のガス領域が、前記遮断プレートと前記ウォーターボックスの間に定められる、
ことを特徴とする請求項12に記載の処理蓋アセンブリ。 - 前記遮断プレートが、前記処理容積にプラズマ含有ガスを送出する前記複数の第3の通路に結合するための、前記遮断プレートの第1の面を前記遮断プレートの第2の面に結合する複数の第4の通路を有する、
ことを特徴とする請求項12に記載の処理蓋アセンブリ。 - 前記第2の電極の第1の面を前記第1の電極の第2の面に結合する前記複数の第3の通路の各々が、前記第2の電極の前記第2の面の方向に開いたボアに接続された前記第2の電極の前記第1の面の方向に開いた円錐形チャネルにより定められる、
ことを特徴とする請求項9に記載の処理蓋アセンブリ。
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