TW202028525A - 具有漏斗狀氣體分散通道及氣體分配板的原子層沉積腔室 - Google Patents

具有漏斗狀氣體分散通道及氣體分配板的原子層沉積腔室 Download PDF

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TW202028525A
TW202028525A TW109112814A TW109112814A TW202028525A TW 202028525 A TW202028525 A TW 202028525A TW 109112814 A TW109112814 A TW 109112814A TW 109112814 A TW109112814 A TW 109112814A TW 202028525 A TW202028525 A TW 202028525A
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幕哈瑪德Ｍ 拉許德
史林尼維斯 干德可塔
馬力歐唐 森切斯
蹇國強
楊逸雄
迪帕克 賈德海
亞瑟多瑟 雅加爾瓦
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美商應用材料股份有限公司
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Abstract

在此提供用於處理基板之方法與設備。一些實施例中，基板處理腔室包含：腔室主體；腔室蓋組件，具有外殼（housing），該外殼包圍中央通道，該中央通道沿著中央軸延伸並具有上部與下部；蓋板，耦合於該外殼並具有有輪廓（contoured）的底表面，該有輪廓的底表面從耦合於該中央通道之下部的中央開口向下且向外延伸至該蓋板之周邊部；以及氣體分配板，配置於該蓋板之下並具有複數個縫隙（aperture），該等縫隙配置成穿過該氣體分配板。

Description

具有漏斗狀氣體分散通道及氣體分配板的原子層沉積腔室
所揭露之實施例一般地關於原子層沉積之設備與方法。
可靠地製造亞微米級與更小的特徵，對下一世代的半導體設備的超大型積體電路（VLSI）與極大型積體電路（ULSI）而言，是一項關鍵科技。然而，隨著逼近電路科技的邊緣，要使VLSI與ULSI科技中互連件的尺寸縮小，對處理能力要有額外要求。處於VLSI與ULSI科技之心臟地位的該多層之互連使用高深寬比特徵之精確處理，比如介層窗（via）與其他互連件。對於VLSI與ULSI之成功與增加個別基板的電路密度與品質之持續努力而言，可靠形成這些互連是非常重要的。
隨電路密度增加，互連件（比如介層窗、溝槽、接觸件，與其他特徵）之寬度以及居間的介電材料的寬度隨之減少，但同時介電層之厚度保持實質地恆定，造成了該特徵之高度對寬度深寬比之增加。許多傳統的沉積處理難以填充深寬比超過4：1的亞微米級結構，特別是難以填充該深寬比超過10：1的亞微米級結構。因此，當前已極為致力於形成具有高深寬比之實質地無孔隙與無接縫的亞微米級特徵。
原子層沉積（ALD）係為在具有高深寬比之特徵上沉積材料層所開發之沉積技術。ALD製程的一個範例包含氣體脈衝之依序導入。例如，氣體脈衝之依序導入的一個循環可含有第一反應物氣體之脈衝，接著是淨化（purge）氣體與／或幫浦抽空之脈衝，接著是第二反應物氣體之脈衝，再接著是由淨化氣體與／或幫浦抽空之脈衝。在此所用之該用語「氣體」被定義為包含單一氣體或複數種之氣體。該第一反應物與該第二反應物之分別脈衝之依序導入可造成該反應物單層交替式自限吸附於該基板之表面，且因此在每一循環中形成材料之單層。該循環可重複至所欲之該沉積材料厚度。介於第一反應物氣體之脈衝與第二反應物氣體之脈衝之間的淨化氣體與／或幫浦抽空之脈衝係用於降低該反應物氣相反應之可能性，該反應物氣相反應是因反應物過量殘存於該腔室而造成。
在一些用於ALD處理之腔室設計中，前驅物與氣體是透過使用漏斗蓋輸送，前驅物經過多個在漏斗形蓋之上的注射器而分配穿過該漏斗蓋。該等發射器產生該注射氣體之環形運動，該注射氣體經在該蓋中心之漏斗剖面以分配。該氣體／ALD前驅物分子之轉動慣量將該等分子從中心分配至邊緣，造成改善的均勻沉積。然而，在一些應用中，發明人已觀察到，在正受處理的基板之中心附近有甜甜圈形的沉積分佈曲線（deposition profile）。相信該甜甜圈形的沉積分佈曲線是因該蓋之漏斗形所導致，並且能引起客戶的積體問題。
因此，發明人已提供用於基板之ALD處理的改良設備與方法。
在此提供用於處理基板之方法與設備。一些實施例中，基板處理腔室包含：腔室主體；腔室蓋組件，具有外殼（housing），該外殼包圍中央通道，該中央通道沿著中央軸延伸並具有上部與下部；蓋板，耦合於該外殼並具有有輪廓（contoured）的底表面，該有輪廓的底表面從耦合於該中央通道之下部的中央開口向下且向外延伸至該蓋板之周邊部；以及氣體分配板，配置於該蓋板之下並具有複數個縫隙（aperture），該等縫隙配置成穿過該氣體分配板。
一些實施例中，基板處理腔室包含：腔室主體；腔室蓋組件，具有外殼，該外殼包圍中央通道，該中央通道沿著中央軸延伸並具有上部與下部；蓋板，耦合於該外殼並具有有輪廓的底表面，該有輪廓的底表面從耦合於該中央通道之下部的中央開口向下且向外延伸至該蓋板之周邊部延伸；氣體分配板，配置於該蓋板之下並具有複數個縫隙，該等縫隙配置成過該氣體分配板；遠端電漿源（RPS）流體連通式（fluidly）耦合於該中央通道；隔離套環，在該遠端電漿源與該外殼間耦合，其中該隔離套環具有內通道，該內通道延伸通過該隔離套環以流體連通式耦合該遠端電漿源與該中央通道；排氣導管，在第一端處耦合該隔離套環，且於第二端處耦合主要泵送通道；以及閥，耦合於該排氣導管以選擇性地開啟或關閉該排氣導管。
一些實施例中，處理基板之方法包含：使第一處理氣體流入氣體分散通道與處理腔室之反應區；使該第一處理氣體流動穿過經配置於該反應區中之氣體分配板中的複數個縫隙，且流至該基板上；使清洗氣體流入該氣體分散通道與該反應區；經排氣系統排出該清洗氣體；使第二處理氣體流入該氣體分散通道與該反應區；使該第二處理氣體流動穿過該在氣體分配板中之該複數個縫隙，且流至該基板上；將該清洗氣體流入該氣體分散通道與該反應區；以及經該排氣系統排出該清洗氣體。
下文敘述本案揭露之其他與進一步實施例。
本案揭露之實施例提供設備與方法，該設備與方法可用於清洗基板處理腔室（比如原子層沉積（ALD）腔室），以及用於在如ALD製程期間沉積材料。實施例包含基板處理腔室與氣體輸送系統，包含遠端電漿源與氣體分配板。其他實施例提供用於在ALD製程期間利用此等氣體輸送系統沉積材料之方法。用於併入此處敘述設備之處理腔室的範例包含高介電常數（即，高k）與金屬ALD沉積腔室，該等腔室可由加州聖塔克拉拉之應用材料公司獲得。下文針對處理腔室之敘述係為上下文意與範例目的而提供，並且，不應被解讀或認定限制本案揭露之範疇。
圖1係根據本案揭露之一些實施例的基板處理腔室（處理腔室100）之概略視圖，該處理腔室包含適合用於ALD製程的氣體輸送系統130。圖2係該處理腔室100之概略剖面視圖。處理腔室100包含腔室主體102，該腔室主體102具有在該腔室主體102內且在該腔室蓋組件132下方之處理空間。該處理腔室100之狹縫閥108提供機器人（圖中未顯示）進出途徑（access），以將基板110傳送到該處理腔室100以及從該處理腔室100收回基板110，所述基板110比如為200 mm或300 mm之半導體晶圓或玻璃基板。腔室襯墊177係沿著該處理腔室100之牆面以配置，以保護該腔室隔絕在處理／清洗期間使用之腐蝕性氣體。
基板支撐件112將該基板110支撐在該處理腔室100中的基板接受表面111上。該基板支撐件112係架設於升舉馬達114以升起與下降該基板支撐件112與配置於該基板支撐件上之該基板110。升舉板116（如圖2所示）連接至升舉馬達118，該升舉板116係架設在該處理腔室100中以升起與下降升舉銷120，該等升舉銷可動式配置成穿過該基板支撐件112。該等升舉銷120在該基板支撐件112表面之上方升起與下降該基板110。該基板支撐件112可包含真空卡盤（圖中未顯示）、靜電卡盤（圖中未顯示）、夾環（圖中未顯示）以在沉積製程中將該基板110固定至該基板支撐件112。
該基板支撐件112之溫度可被調整以控制該基板110之溫度。例如，基板支撐件112可用內嵌之加熱元件來加熱，所述內嵌之加熱元件比如電阻加熱器（圖中未顯示），或者是基板支撐件112可使用輻射熱來加熱，所述輻射熱比如配置於該基板支撐件112之上之加熱燈（圖中未顯示）。淨化環122可配置於該基板支撐件112上以界定淨化通道124，該淨化通道提供淨化氣體至該基板110之周邊部以防止該基板110之周邊部上的沉積。
氣體輸送系統130係被配置於該腔室主體102之上部以提供氣體至處理腔室100，所述氣體比如處理氣體與／或淨化氣體。真空系統（圖中未顯示）係與泵送通道179連通以從該處理腔室100排空任何所欲之氣體並且幫助維持在該處理腔室100內之所欲氣壓或氣壓範圍。
在一些實施例中，該腔室蓋組件132包含氣體分散通道134，該氣體分散通道延伸通過該腔室蓋組件132之中央部。如圖式1與2所示，該氣體分散通道134向該基板接受表面111垂直延伸並且也沿著該氣體分散通道134之中央軸133延伸，通過蓋板170、至下表面160。在一些實施例中，該氣體分散通道134之上部係實質地沿著中央軸133呈圓柱形，並且該氣體分散通道134之下部漸縮（taper）遠離中央軸133。該下表面160之尺寸與構形設計成實質地覆蓋該基板110，該基板110配置於該基板支撐件112之該基板接受表面111上。該下表面160從該蓋板170之外邊緣朝向該氣體分散通道134漸縮。該氣體輸送系統130可提供一或多種氣體至該氣體分散通道134以處理該基板110。在一些實施例中，氣體輸送系統130可以經由一個氣體入口耦合於該氣體分散通道134。在一些實施例中，比如如圖3所示者，該氣體輸送系統可以經由複數個入口耦合於該氣體分散通道134。
如圖3所說明者，環形氣流174說明通過該氣體分散通道134之該處理氣體之流動，該環形氣流174可含有各種類型的流動形態（flow pattern）。在一些實施例中，當處理氣體通過該分散通道時，可以迫使處理氣體繞著氣體分散通道134之中央軸133周圍迴轉（revolution）。在此實施例中，該環形氣流174可含有各種環形流動形態，比如渦流形態、螺旋（helix）形態、繞軸（spiral）形態、或前述形態之衍生形態。
雖然提供環形氣流174係對於眾多應用為有利的，發明人已發現在一些應用中，該環形氣流能引起非均勻處理之結果。發明人已觀察到該氣流在靠近正受處理之該基板110之中心可引起甜甜圈形沉積分佈曲線。該甜甜圈形型態可能是由該氣體分散通道134之漏斗狀所導致。因此，在一些實施例中，該處理腔室100進一步包含氣體分配板125，該氣體分配板具有複數個縫隙126，該等縫隙126配置成穿過該氣體分配板125。該氣體分配板125延伸至該氣體分散通道134之表面，以使得僅有從該氣體分散通道134至該基板之路徑係經該氣體分配板125之複數個縫隙126。該氣體分配板125有利地創造通過該氣體分配板125之氣體之扼流，造成基板110上有更均勻之沉積，並且因此實質地消除由該氣體之轉動流所導致之該甜甜圈形沉積。
在一些實施例中，該氣體分配板125係由非腐蝕性陶瓷材料形成，比如，例如鋁氧化物或鋁氮化物。在一些實施例中，該複數個縫隙126之各者可具有相等的流體傳導率。在一些實施例中，該複數個縫隙126之密度（比如，每單位面積之縫隙數量或縫隙開口之尺寸）可遍及該氣體分配板125變化以在該基板110上達成所欲之沉積型態。例如，可於氣體分配板125之中心配置較高密度的縫隙126，以增加相對於該基板邊緣的在基板中心之沉積速率，而進一步改善沉積均勻度。
雖然該複數個縫隙126係被描述為圓柱狀通孔，但該複數個縫隙126可具有不同之輪廓。圖式4A至圖4C描述複數個縫隙126的輪廓的不同、非限制性實施例。於圖4A描述之實施例中，該縫隙126係圓柱狀通孔，該圓柱狀通孔具有環繞於該縫隙的彎曲邊緣402。於圖4B描述之該實施例中，該縫隙126係通孔，該通孔具有向內朝該縫隙中心漸縮之上部404、垂直延伸至氣體分配板125上表面127之圓柱中央部405、以及從該縫隙中心向外漸縮之下部406。於圖4C描述之該實施例中，該縫隙126係通孔，該通孔具有上部408，垂直延伸至氣體分配板125上表面127之圓柱中央部409、以及從該縫隙中心向外漸縮之下部410，而該上部408具有錐坑孔（countersunk hole）。可取而代之使用複數個縫隙126之其他輪廓，以在該基板110處理期間達成最佳沉積均勻度。
不希望被理論所囿，發明人相信氣體分散通道134之直徑（所述直徑從氣體分散通道134之上部至沿著中央軸133之第一點為定值，並且該直徑從該第一點至氣體分散通道134之下部135增加）允許較少的通過氣體分散通道134的氣體絕熱膨脹，而幫助控制該環形氣流174中所含的處理氣體之溫度。例如，輸送進入氣體分散通道134之氣體的突然絕熱膨脹可能造成該氣體溫度下墜，而可能導致該氣體冷凝與形成液滴。另一方面，相信逐漸地漸縮的氣體分散通道134提供較少之氣體絕熱膨脹。因此，更多的熱可傳遞至該氣體或從該氣體傳遞，並且因此該氣體之溫度可以更簡單地藉由控制該腔室蓋組件132之溫度而控制。氣體分散通道134可逐漸地漸縮並且含有一或多個漸縮之內表面，比如漸縮筆直表面、內凹表面、外凸表面或上述表面之組合，或可含有一或多個漸縮之內表面的分段（亦即，部分漸縮與部分未漸縮）。
如圖3所示，氣體分散通道134之上部係以配置於外殼375之內區域中之插入件300界定。該插入件300包含位在插入件300之上部的帽302與至少部分界定該氣體分散通道134之中央通路。該帽302延伸過該外殼375以固著該插入件300到位。該插入件300與帽302包含複數個O形環385，該O形環配置於該插入件300與該外殼375之間，以確保適當密封。該插入件300包含複數個周圍縫隙，當該插入件300插入外殼375時，該周圍縫隙形成相對應之複數個周圍通道360、365、370。該複數個周圍通道360、365、370係經由相對應之複數個孔 340、345、350流體連通式耦合於該氣體分散通道134。在圖3所示之實施例中，該氣體輸送系統130係經由複數個氣體饋送線路310、315、320耦合於該氣體分散通道134。該氣體饋送線路310、315、320係流體連通式耦合於該複數個周圍通道360、365、370以提供一或多種氣體至該氣體分散通道134。
回到圖1與圖2，該處理腔室100進一步包含腔室清洗系統，該腔室清洗系統包含遠端電漿源（RPS）190、於一端耦合該RPS 190並於相對端耦合該帽302的隔離套環192、耦合於蓋板170上表面之加熱板198、以及流體連通式耦合於該RPS 190之清洗氣體（亦即，淨化氣體）之氣源197。該清洗氣源可包含任合適合形成電漿以清洗處理腔室100的氣體。在一些實施例中，例如，該清洗氣體可以為三氟化氮（NF3 ）。該隔離套環192包含內通道193，該內通道193透過配置於帽302中央部之複數個孔285流體連通式耦合於該氣體分散通道134，以使電漿從該RPS 190流動通過該氣體分散通道134且流入該反應區164。該加熱板198可以由不銹鋼形成並且包含複數個耐熱元件，該等耐熱元件分散在該板各處。
典型地，在氣體輸送系統130提供第一氣體至氣體分散通道134之後，清洗氣體流動通過該氣體分散通道134與反應區164，以快速地從氣體分散通道134與反應區164淨化第一氣體。之後，由氣體輸送系統130提供第二氣體至氣體分散通道134，並且該清洗氣體再一次地流動通過氣體分散通道134而至反應區164，以快速地從氣體分散通道134與反應區164淨化第二氣體。然而，添加氣體分配板125會堵塞（choke）該清洗氣體至泵送通道179之流動，並且延長了清洗製程。就此而言，發明人已併入排氣系統180，該排氣系統180具有排氣導管184，該排氣導管184在第一端186耦合隔離套環192，並且在第二端188耦合泵送通道179。閥182係配置於排氣導管184中，以選擇性地將排氣導管184流體連通式耦合至內通道193。在一些實施例中，例如，該閥182可以為具有柱塞202的柱塞形式閥，該柱塞202可在第一位置（如圖2所示）與第二位置之間移動，該柱塞202在該第一位置將排氣導管184流體連通式耦合至內通道193，而該柱塞202在該第二位置使排氣導管184密封隔絕該內通道193。每一次當清洗氣流動通過該氣體分散通道134與該反應區164，該閥182開啟並且該清洗氣體快速地排出至泵送通道179。
當處理腔室100之內側氣壓超過於該RPS 190內側之氣壓時，處理氣體可向上流至該RPS 190並損壞該RPS 190。該複數個孔285係用於作為扼流點以防止處理氣體之逆流向上流動通過內通道193並且進入該RPS 190中。該隔離套環192可由任何對所用之清洗氣體不反應之材料所形成。在一些實施例中，當該清洗氣體係NF3 時，該隔離套環192可為鋁所形成。在一些實施例中，隔離套環192與插入件300可由鋁所形成並且鍍上塗層以防止隔離套環192與插入件300因所使用之腐蝕性氣體之腐蝕。例如，該塗層可以鎳或鋁氧化物形成。
參照圖3，RPS 190在小於或等於約40°C之溫度下運作。為求有利地使RPS 190隔絕處理腔室100中所產生之熱，絕熱環394係配置於該隔離套環192與帽302之間。該絕熱環394係由具低熱導率之金屬形成（例如，低於隔離套環192與帽302之熱導率）。還有，O形環385也可配置於隔離套環192與帽302之間以進一步減低隔離套環192與帽302之間之接觸面積。絕熱環394與O形環385之組合扮演熱的扼流（thermal choke）以確保在處理腔室100中產生之熱不會負面地影響該RPS 190。
在一些實施例中，當蓋板170被加熱過100°C時，該處理腔室100可包含差動泵送線路250以確保任何陷於O形環385之間的處理氣體或副產物排出至該泵送通道179。該差動泵送線路250於第一端耦合蓋板170且於第二端耦合外殼375，該第二端與該第一端相對。該差動泵送線路係流體連通式耦合於氣體分散通道134與一或更多個通道260，該通道260在二個或更多個O形環385之間的區域形成。當該閥182係開啟以使氣體分散通道134排氣時，該差動泵送線路排出被陷於O形環385之間之氣體。
回到圖3，腔室蓋組件132之下表面160之一部分可從耦合氣體分散通道134的中央開口至腔室蓋組件132之周邊部向下與向外呈一輪廓或呈一角度，以幫助來自氣體分散通道134在橫跨該基板110之表面（亦即，從該基板之中心至該基板之邊緣）上有改善的速率分佈曲線（velocity profile）。下表面160可含有一或更多個表面，比如筆直表面、外凸表面、內凹表面或上述表面之組合。在一個範例中，下表面160係外凸呈漏斗狀。
在一個範例中，下表面160係朝基板接受表面111之邊緣向下向外傾斜，以助於使在腔室蓋組件132之下表面160與基板110之間行進的處理氣體的速率變化減少，同時協助該基板110之表面均勻地暴露至反應物氣體。腔室蓋組件132之部件與零件可含有材料，比如不銹鋼、鋁、鍍鎳鋁、鎳、上述材料之合金、或其他合適之材料。在一個實施例中，蓋板170可從金屬獨立地建造、機械加工（machine）、鍛造、或其他方式製作，所述金屬比如鋁、鋁合金、鋼、不鏽鋼、上述金屬之合金、或上述金屬之組合。
在一些實施例中，氣體分散通道134之內表面131與腔室蓋組件132之下表面160可含有鏡面拋光面以幫助氣體沿著氣體分散通道134與腔室蓋組件132之下表面160流動。
參照圖1至圖3，在處理運作中，基板110係藉由機器人（圖中未顯示）經狹縫閥108輸送至處理腔室100。基板110係透過升舉銷120與該機器人之合作而定位在基板支撐件112上。基板支撐件112升起基板110至與該氣體分配板125之下表面相對且接近之位置（close opposition）。第一氣流可藉由氣體輸送系統130注入處理腔室100之氣體分散通道134，該第一氣流之注入是與第二氣流一起或分開（亦即，脈衝）。該第一氣流可含有來自淨化氣源的連續的淨化氣體之連續流以及來自反應物氣源的反應物氣體之脈衝，或可含有來自反應物氣源的反應物氣體之脈衝以及來自淨化氣源的淨化氣體之脈衝。該第二氣流可含有來自淨化氣源的淨化氣流之連續流以及來自反應物氣源的反應物氣體之脈衝，或可含有來自反應物氣源的反應物氣體之脈衝以及來自淨化氣源的淨化氣體之脈衝。
該環形氣流174行進通過氣體分散通道134並且之後通過氣體分配板125中之該複數個縫隙126。然後該氣體沉積在基板110之表面上。腔室蓋組件132之下表面160係向下傾斜，該腔室蓋組件132之下表面160幫助減低遍及氣體分配板125之表面上的氣流之速率變化。過多氣體、副產物等流入該泵送通道179，然後從處理腔室100排出。在整個處理運作中，該加熱板198可加熱該腔室蓋組件132至預定溫度，以加熱已累積在該處理腔室100牆面（或配置在該腔室之處理套件）上的任何固體副產物。結果為，任何累積的固體副產物皆被汽化。該汽化之副產物被真空系統（未顯示）與泵送通道179抽空。在一些實施例中，預定溫度係大於或等於150 °C。
圖5說明根據本案揭露之一些實施例之處理基板之方法500。於步驟505，使第一處理氣體從氣體輸送系統130流入氣體分散通道134與反應區164中。於步驟510，該第一處理氣體流動通過該氣體分配板125中之複數個縫隙126，並且流至基板110上。於步驟515，清洗氣體係流入該氣體分散通道134與該反應區164，以淨化該第一處理氣體。於步驟520，該清洗氣體係經由該排氣系統180排出。於步驟525，第二處理氣體流入氣體分散通道134與反應區164。於步驟530，該第二處理氣體流動通過該氣體分配板125中之複數個縫隙126，並且流至基板110上。於步驟535，該清洗氣體流入該氣體分散通道134與該反應區164，以淨化該第二處理氣體。於步驟540，該清洗氣體係經由該排氣系統180排出。
其他適用於原子層沉積之腔室之實施例併有一或多個此等特徵。
雖然上述內容述係針對本案揭露之一些實施例，但可不脫離本案揭露之實施例的基本範疇而設計其他與進一步之實施例。
100:處理腔室 102:腔室主體 108:狹縫閥 110:基板 111:基板接受表面 112:基板支撐件 114:升舉馬達 116:升舉板 118:升舉馬達 120:升舉銷 122:淨化環 124:淨化通道 125:氣體分配板 126:縫隙 127:上表面 130:氣體輸送系統 132:腔室蓋組件 133:中央軸 134:氣體分散通道 135:下部 160:下表面 164:反應區 170:蓋板 174:氣流 177:腔室襯墊 179:泵送通道 180:排氣系統 182:閥 184:排氣導管 186:第一端 188:第二端 190:遠端電漿源（RPS） 192:隔離套環 193:內通道 197:清洗氣源 198:加熱板 202:柱塞 250:差動泵送線路 260:通道 285:孔 300:插入件 302:帽 310:氣體饋送線路 315:氣體饋送線路 320:氣體饋送線路 340:孔 345:孔 350:孔 360:周圍通道 365:周圍通道 370:周圍通道 375:外殼 385:O形環 394:絕熱環 402:彎曲邊緣 404:上部 405:圓柱中央部 406:下部 408:上部 409:圓柱中央部 410:下部 500:方法 505:步驟 510:步驟 515:步驟 520:步驟 525:步驟 530:步驟 535:步驟 540:步驟
透過參考附圖所繪的本案揭露之說明性實施例，能理解上文簡要概述且於下文更詳細討論的本案揭露之實施例。然而，該附圖僅說明本案揭露之典型實施例，因此不被認為是限制範疇，因為本案揭露內容可容認其他等效實施例。
圖1描述根據本案揭露之一些實施例之處理腔室概略視圖。
圖2描述根據本案揭露之一些實施例之處理腔室的概略剖面視圖。
圖3描述根據本案揭露之一些實施例之蓋組件的概略剖面視圖。
圖4A至圖4C描述根據本案揭露之一些實施例之配置成穿過氣體分配板的縫隙的概略視圖圖。
圖5描述流程圖，說明根據本案揭露之實施例之處理基板方法。
為幫助理解，如可能則已使用相同的元件符號指定該等圖式共通的相同元件。該等圖式不按比例繪製並且為了清楚起見可被簡化。一個實施例之元件與特徵可被有益地併入其他實施例而無需另外記載。
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無
114:升舉馬達
116:升舉板
118:升舉馬達
120:升舉銷
122:淨化環
124:淨化通道
125:氣體分配板
126:縫隙
130:氣體輸送系統
134:氣體分散通道
135:下部
160:下表面
164反應區
170:蓋板
179:泵送通道
180:排氣系統
182:閥
184:排氣導管
190:遠端電漿源(RPS)
192:隔離套環
193:內通道
197:清洗氣源
198:加熱板
202:柱塞
250:差動泵送線路
260:通道
285:孔

Claims (20)

  1. 一種用於基板處理腔室之蓋，包括： 一蓋板，包括一上表面及一有輪廓（contoured）的底表面，該上表面具有一中央開口，而該有輪廓的底表面具有一第一部份自該中央開口向下且向外延伸至該蓋板之周邊部、以及一第二部份沿著該蓋板之周邊部徑向向外延伸； 一上凸緣，自該蓋板徑向向外延伸；以及 一或更多個通道，形成為自該蓋板之一頂表面至該有輪廓的底表面之該第二部份穿過該蓋板。
  2. 如請求項1所述之蓋，其中該蓋板之該上表面為平面。
  3. 如請求項1所述之蓋，其中該蓋板之該上表面與該有輪廓的底表面之該第二部份為平行。
  4. 如請求項1所述之蓋，進一步包括： 一O形環溝槽，係設置於該蓋板之該上表面並環繞該中央開口。
  5. 如請求項1所述之蓋，其中該有輪廓的底表面具有一鏡面拋光表面。
  6. 如請求項1所述之蓋，其中該蓋板係由金屬所製造。
  7. 如請求項1所述之蓋，其中該蓋板係由鋁、鋁合金、鋼、不鏽鋼、上述金屬之合金、或上述金屬之組合所製造。
  8. 如請求項1至7中任一項所述之蓋，進一步包括： 一氣體分配板，配置為耦接至該蓋板，以使得該蓋板之該有輪廓的底表面延伸至並接觸該氣體分配板，其中該氣體分配板具有複數個縫隙（aperture），該複數個隙縫配置成穿過該氣體分配板，以使得當該氣體分配板耦接至該蓋板時，自該中央開口至該氣體分配板下方的一區域之唯一路徑為穿過該複數個隙縫。
  9. 如請求項8所述之蓋，其中該氣體分配板係由一非腐蝕性陶瓷材料所形成。
  10. 如請求項8所述之蓋，其中該氣體分配板係由氧化鋁或氮化鋁所形成。
  11. 如請求項8所述之蓋，其中該複數個縫隙之各者具有相等之流體傳導率。
  12. 如請求項8所述之蓋，其中該複數個縫隙之中的每個縫隙為一通孔，該通孔具有：具有一錐坑孔之一上部、垂直延伸至該氣體分配板的上表面之一圓柱中央部、以及從縫隙中心向外漸縮之一下部。
  13. 如請求項8所述之蓋，其中該氣體分配板包括容納該複數個縫隙之一中央部分、以及環繞該複數個縫隙並配置為與該蓋板之該有輪廓的底表面之該第二部份連接之一第一階狀部分。
  14. 如請求項13所述之蓋，其中該氣體分配板進一步包括一第二階狀部分，該第二階狀部分係環繞該第一階狀部分並配置為與該蓋板之該上凸緣連接。
  15. 一種用於基板處理腔室之蓋組件套組，包括： 一蓋板，包括一上表面及一有輪廓的底表面，該上表面具有一中央開口，而該有輪廓的底表面具有一第一部份自該中央開口向下且向外延伸至該蓋板之周邊部、以及一第二部份沿著該蓋板之周邊部徑向向外延伸，該蓋板具有一上凸緣以及一或更多個通道，該上凸緣自該蓋板徑向向外延伸，該一或更多個通道係形成為自該蓋板之一頂表面至該有輪廓的底表面之該第二部份穿過該蓋板；以及 一氣體分配板，配置為耦接至該蓋板，以使得該蓋板之該有輪廓的底表面延伸至並接觸該氣體分配板，其中該氣體分配板具有複數個縫隙，該複數個隙縫配置成穿過該氣體分配板，以使得當該氣體分配板耦接至該蓋板時，自該中央開口至該氣體分配板下方的一區域之唯一路徑為穿過該複數個隙縫，其中該氣體分配板包括一中央部分、一第一階狀部分、以及一第二階狀部分，該中央部分係容納該複數個縫隙，該第一階狀部分係環繞該複數個縫隙並配置為與該蓋板之該有輪廓的底表面之該第二部份連接，該第二階狀部分係環繞該第一階狀部分並配置為與該蓋板之該上凸緣連接。
  16. 如請求項15所述之蓋組件套組，其中該複數個縫隙之各者具有相等之流體傳導率。
  17. 如請求項15所述之蓋組件套組，其中該氣體分配板係由一非腐蝕性陶瓷材料所形成。
  18. 如請求項15所述之蓋組件套組，其中該氣體分配板係由氧化鋁或氮化鋁所形成。
  19. 如請求項15所述之蓋組件套組，其中該蓋板係由金屬所製造。
  20. 如請求項15所述之蓋組件套組，其中該蓋板係由鋁、鋁合金、鋼、不鏽鋼、上述金屬之合金、或上述金屬之組合所製造。
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