CN110088885A - 向下游室传送自由基和前体气体以实现远程等离子体膜沉积的有热控制的集成喷头 - Google Patents

向下游室传送自由基和前体气体以实现远程等离子体膜沉积的有热控制的集成喷头 Download PDF

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Publication number
CN110088885A
CN110088885A CN201780077684.7A CN201780077684A CN110088885A CN 110088885 A CN110088885 A CN 110088885A CN 201780077684 A CN201780077684 A CN 201780077684A CN 110088885 A CN110088885 A CN 110088885A
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spray head
treatment system
distribution cavity
room
lining treatment
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CN201780077684.7A
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CN110088885B (zh
Inventor
雷切尔·巴特泽
邱华檀
巴德里·瓦拉达拉简
帕特里克·吉拉德·布里林格
龚波
威尔·施洛塞尔
桂喆
谈太德
杰弗里·霍恩
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
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Abstract

一种衬底处理系统包括第一室，该第一室包括衬底支撑件。喷头布置在所述第一室上方并被配置成过滤离子且将来自等离子体源的自由基输送到所述第一室。所述喷头包括：传热流体分配腔，其包括用于接收传热流体的入口和用于将所述传热流体引导穿过所述喷头的中心部分到达出口以控制所述喷头的温度的多个流动通道；辅助气体分配腔，其包括用于接收辅助气体的入口和用于将所述辅助气体注入所述第一室的多个辅助气体注入器；和穿过所述喷头的多个通孔。所述通孔不与所述传热流体分配腔连通，也不与所述辅助气体分配腔流体连通。

Description

向下游室传送自由基和前体气体以实现远程等离子体膜沉积 的有热控制的集成喷头
相关申请的交叉引用
本申请要求2016年12月14日提交的美国专利申请No.15/378,854的优先权。上述申请的全部公开内容通过引用并入本文。
技术领域
本公开涉及衬底处理系统，更具体地涉及包括向下游室传送自由基和前体气体的喷头的衬底处理系统。
背景技术
这里提供的背景描述是为了总体呈现本公开的背景的目的。在此背景技术部分以及在提交申请时不能确定为现有技术的描述的各方面中描述的范围内的当前指定的发明人的工作既不明确也不暗示地承认是针对本公开的现有技术。
衬底处理系统可用于在诸如半导体晶片之类的衬底上沉积膜。衬底处理系统通常包括处理室和衬底支撑件。在膜沉积期间，可以将自由基和前体气体供应到处理室。
例如，处理室可包括上室、下室和衬底支撑件。喷头可以布置在上室和下室之间。衬底布置在下室中的衬底支撑件上。将等离子体气体混合物供应到上室并且在上室中激励等离子体。等离子体产生的自由基中的一些通过喷头流到下室。喷头过滤离子并屏蔽紫外线以防止其到达下室。前体气体混合物通过喷头供应到下室，并与自由基反应以在衬底上沉积膜。
通常，喷头没有热控制系统。然而，在一些处理系统中，使用基本热控制系统来控制喷头的外边缘的温度，该外边缘可接近而不是在真空下。由于来自等离子体的热量，基本热控制系统不能均匀地控制整个喷头上的温度。换句话说，喷头中心的温度升高。随着例如等离子体开/关、压力、流速和/或基座温度等工艺变化，温度也会发生变化。喷头温度的变化不利地影响沉积工艺的均匀性和缺陷性能。
发明内容
一种衬底处理系统包括第一室，该第一室包括衬底支撑件。喷头布置在所述第一室上方并被配置成过滤离子且将来自等离子体源的自由基输送到所述第一室。所述喷头包括：传热流体分配腔，其包括用于接收传热流体的入口和用于将所述传热流体引导穿过所述喷头的中心部分到达出口以控制所述喷头的温度的多个流动通道；辅助气体分配腔，其包括用于接收辅助气体的入口和用于将所述辅助气体注入所述第一室的多个辅助气体注入器；和穿过所述喷头的多个通孔。所述通孔不与所述传热流体分配腔连通，也不与所述辅助气体分配腔流体连通。
在其他特征中，所述传热流体分配腔包括：与所述入口流体连通的第一分配腔。所述流动通道的第一端与所述第一分配腔连通。第二分配腔与所述流动通道的相对端流体连通。
在其他特征中，所述传热流体分配腔包括：与所述入口流体连通的第一分配腔；与所述流动通道的第一端流体连通的第二分配腔；第一多个限制装置，其布置在所述第一分配腔和所述第二分配腔之间，以限制其间的流体流动；与所述流动通道的相对端流体连通的第三分配腔；与所述出口流体连通的第四分配腔；和第二多个限制装置，其布置在所述第三分配腔和所述第四分配腔之间，以限制其间的流体流动。
在其他特征中，所述多个流动通道沿径向方向从所述喷头的一侧流动到所述喷头的相对侧。所述多个流动通道限定直的路径。所述多个流动通道限定弯曲路径。所述多个流动通道限定正弦形路径。
在其他特征中，所述辅助气体分配腔包括：第一分配腔；第二分配腔；和设置在所述第一分配腔和所述第二分配腔之间的流动限制装置。
在其他特征中，所述流通限制装置包括：第一多个壁；和在所述第一多个壁之间限定的多个缝隙。所述第一多个壁是弓形的。第二多个壁围绕所述第二分配腔中的所述通孔布置。所述第二多个壁是圆筒形的。
在其他特征中，所述辅助气体注入器与所述第二分配腔流体连通。多个限制装置布置在所述第二分配腔和所述辅助气体注入器之间。
在其他特征中，所述多个流动通道包括入口和出口。所述多个流动通道的所述入口布置在所述喷头的一侧上，所述多个流动通道的所述出口布置在所述一侧上在所述入口之间，并且所述多个流动通道连接到所述入口上，穿过所述喷头行进并返回穿过所述喷头到达所述出口。
在其他特征中，第二室布置在所述第一室上方。所述喷头布置在所述第一室和所述第二室之间。线圈围绕所述第二室布置。RF发生器连接到所述线圈以在所述第二室中产生等离子体。
在其他特征中，所述流动通道中的至少一个包括流动限制装置。所述传热流体包括液体。所述传热流体包括气体。所述传热流体不流入所述第一室。
在其他特征中，所述辅助气体注入器从所述喷头的底表面延伸预定距离，其中所述预定距离在0.1英寸至1.5英寸的范围内。所述通孔的直径在0.05英寸至0.3英寸的范围内。
在其他特征中，所述喷头包括圆筒形壁，所述圆筒形壁从所述喷头的底表面延伸并且位于所述多个通孔和所述多个辅助气体注入器的径向外侧。所述喷头包括圆筒形壁，所述圆筒形壁从所述喷头的顶表面向上延伸，并且位于所述多个通孔和所述多个辅助气体注入器的径向外侧。
在其他特征中，第一O形环布置在所述喷头的顶表面和所述上室之间；以及第二O形环布置在所述喷头的所述底表面和所述下室之间。
根据详细描述、权利要求和附图，本公开的其他适用领域将变得显而易见。详细描述和具体示例仅意图用于说明的目的，并不旨在限制本公开的范围。
附图说明
根据详细描述和附图将更充分地理解本公开，其中：
图1是根据本公开的包括喷头的衬底处理室的示例的功能框图。
图2A是根据本公开的喷头的示例的底部透视图；
图2B是示出根据本公开的用于接收O形环的凹槽的侧剖视图；
图3是根据本公开的喷头的示例的顶部透视图；
图4A是示出根据本公开的喷头的示例的底表面的平面图；
图4B是示出根据本公开的布置在辅助气体注入器周围的多个通孔的示例的平面图；
图4C是示出根据本公开的布置在辅助气体注入器周围的多个通孔的另一示例的平面图；
图5A是根据本公开的喷头的示例的侧剖视图；
图5B是示出由多个相邻层形成的喷头的示例的侧剖视图；
图6是根据本公开的喷头的另一示例的放大侧剖视图；
图7是根据本公开的图6的喷头的侧剖视图；
图8A是根据本公开的包括向下突出的壁的喷头的另一示例的放大侧剖视图；
图8B是根据本公开的包括向上突出的壁的喷头的另一示例的放大侧剖视图；
图9是根据本公开的喷头的中间层的顶表面的示例的平面图；
图10示出了根据本公开的具有限制装置的通道的示例，所述限制装置用于控制流体通过通道的流动；
图11是根据本公开的喷头的中间层的底表面的示例的平面图；
图12是根据本公开的喷头的中间层的顶表面的另一示例的平面图，该顶表面包括沿其一个边缘布置的交替的传热流体入口和出口对；
图13是根据本公开的图12中的喷头的中间层的底表面的平面图；以及
图14是图12和图13中的喷头的侧剖视图。
在附图中，可以重复使用附图标记来标识相似和/或相同的元件。
具体实施方式
本公开涉及一种衬底处理系统，其包括集成的嵌入式安装的喷头，该喷头输送来自远程等离子体源的均匀的自由基并过滤离子。喷头通过穿过喷头的中心部分向通道供应传热流体来提供均匀的温度控制，以保持均匀和受控的温度。喷头还向包括衬底的室提供均匀的前体气流输送。在一些示例中，衬底处理系统可用于沉积保形碳化物膜，但是也可以沉积其他类型的膜。
现在参考图1，衬底处理系统10包括上室20和下室30。虽然示出并描述了特定类型的衬底处理系统，但是也可以使用其他类型的衬底处理系统。虽然示出了电感耦合等离子体，但是也可以使用其他类型的等离子体产生，例如电容耦合等离子体、远程等离子体源或其他合适的等离子体发生器。
在一些示例中，上室20可以包括圆顶形室，但是也可以使用其他室形状。衬底支撑件34布置在下室30中。衬底36在衬底处理期间布置在衬底支撑件34上。喷头40布置在上室20和下室30之间。感应线圈42可以布置在上室20周围。
气体输送系统50-1可用于将包含等离子体气体的工艺气体混合物供应到上室20。气体输送系统50-1包括一个或多个气体源52-1、52-2、...、和52-N，阀54-1、...、和54-N，质量流量控制器(MFC)56-1、...、和56-N，以及歧管58，但也可以使用其他类型的气体输送系统(其中N是整数)。气体输送系统50-2将包含前体气体的工艺气体混合物输送到喷头40。
RF等离子体发生器66包括RF源70和匹配网络72。RF等离子体发生器66选择性地向感应线圈42提供RF功率(同时供应等离子体气体)以在上室20中产生等离子体62。
热控制系统86可用于将诸如气体或液体冷却剂的传热流体供应到喷头40以控制喷头40的温度。阀88和泵90可用于抽空反应物。
控制器94与气体输送系统50-1和50-2通信，以根据需要选择性地将处理气体供应到上室20和喷头40。控制器94与RF等离子体发生器66通信以产生和熄灭上室20中的等离子体。
控制器94与热控制系统86通信以控制用于控制喷头40的温度的传热流体的流速和温度。在一些示例中，传热流体可包括水、与乙二醇混合的水、全氟聚醚氟化流体或其他流体和/或一种或多种气体。在一些示例中，热控制系统86使用闭环控制来控制传热流体的流速或温度。在其他示例中，热控制系统86使用比例积分微分(PID)控制来控制流速和温度。传热流体可以在建筑水循环系统的开环系统中提供。在一些示例中，传热流体与真空室通过气密方式隔离开。
在一些示例中，控制器94可以连接到布置在喷头40中用于感测喷头40的一个或多个温度的一个或多个温度传感器(未示出)。在一些示例中，控制器94可以连接到布置在喷头40中用于感测处理室中的一个或多个压力的一个或多个压力传感器(未示出)。控制器94与阀88以及泵90通信，以控制上室20和下室30内的压力，并选择性地从其中排出反应物。
现在参考图2A-3，示出了喷头40的顶表面102、底表面104和侧表面108。在图2A中，喷头40包括多个间隔开的通孔110，通孔110在喷头的轴向中心部分或中心从喷头40的顶表面102通向喷头40的底表面104。在一些示例中，O形环111可以位于喷头40的底表面104和下室30之间，如图2B所示。凹槽113可以位于喷头40和下室30中的一个或两个上，以定位O形环111。
多个辅助气体注入器112供应来自喷头40的诸如前体气体之类的辅助气体。在一些示例中，辅助气体注入器112在喷头40的中心部分从喷头40的底表面104向下延伸。在一些示例中，辅助气体注入器112包括底表面104上的限制装置(未示出)，以防止反向扩散并使气流从一个辅助气体注入器均匀地流到另一个。限制装置可能导致受到阻塞的流动条件。
在图3中，喷头40包括成对的热流体端口120,122，以用作入口和出口。喷头40可包含一个以上的热流体分配腔，其具有更多成对的端口。泄漏收集盘128可以布置在热流体端口120,122中的一个或两个周围。泄漏收集盘128可以布置在上室和下室的外部。泄漏收集盘128使得能进行泄漏检测。在一些示例中，O形环115可以位于喷头40的顶表面102和上室20之间。凹槽可以位于喷头40和上室20中的一个或两个上以与图2B所示的方式类似的方式定位O-环111。
现在参考图4A，喷头40的通孔110和辅助气体注入器112可以以多种图案布置。例如，图4A中所示的喷头40的通孔110和辅助气体注入器112可以具有偏移的三角形图案T。替代图案包括矩形、径向、六边形或螺旋图案，但是也可以使用其他图案。在一些示例中，辅助气体注入器112的间隔在0.25英寸至2英寸的范围内。在一些示例中，通孔110可以具有与辅助气体注入器的间隔相同的间隔，但是也可以使用不同的间隔，如图4B和4C所示。
在一些示例中，通孔110可以包括多个较小的通孔，这些通孔围绕每个辅助气体注入器112聚集，如图4B和图4C中的示例所示。围绕辅助气体注入器112的通孔110的布置可以如图4B所示是均匀的，或者如图4C所示不均匀。在一些示例中，通孔110-R位于喷头40的在辅助气体注入器的靠近喷头40的中心的一侧上的径向线上。
现在参考图5A-8B，示出了喷头40的侧剖视图。在图5A中，通孔110从喷头40的顶表面102通向其底表面104。一个或多个传热流体分配腔140位于一个或多个平面中，所述平面垂直于通孔110并且平行但偏离喷头40的上表面102。一个或多个辅助气体分配腔150位于一个或多个平面中，所述平面垂直于通孔110并且平行但偏离喷头40的下表面104和包括传热流体分配腔140的一个或多个平面。所示的配置是辅助气体分配腔上方的传热流体分配腔。可以反转分配腔，使得辅助气体分配腔位于传热流体分配腔上方。
一个或多个传热流体分配腔140连接到热流体端口120,122。一个或多个辅助气体分配腔150从辅助气体入口接收气体(图2A)并供应辅助气体流至辅助气体注入器112的流动通道152。
在一些示例中，辅助气体注入器112从喷头40的底表面延伸远离一预定距离，以减少喷头40上的膜沉积。在一些示例中，预定距离在0.1英寸至1.5英寸的范围内，但是也可以使用其他距离。在一些示例中，辅助气体注入器112包括限制装置以防止反向扩散并确保从一个辅助气体注入器到另一个辅助气体注入器的流动均匀性。在一些示例中，通孔110的直径在0.05英寸至0.3英寸的范围内。
在图5B中，喷头40可以由连接在一起的多层制成，包括顶层163、中间层165和底层167。可以添加更多层以创建额外的分配腔。在一些示例中，喷头40可以使用真空钎焊、钨惰性气体(TIG)焊接或电子束焊接来制造，以便以合理的成本实现复杂且独特的几何形状。真空钎焊连接允许将喷头加工成平板，凹槽切入在板中，每个板之间有钎焊层。焊接技术需要更复杂的子部件，以便焊接能进入所有需要密封的区域。可以加工柱和相应的孔以将密封区域提升到可以焊接的部件的表面。
在一些示例中，中间层165的顶表面限定一个或多个传热流体分配腔140，并且中间层165的底表面限定一个或多个辅助气体分配腔150。然而，顶层163的底表面可用于部分或完全限定一个或多个传热流体分配腔140，并且底层167的顶表面可用于完全或部分地限定一个或多个辅助气体分配腔。
在一些示例中，分配腔和其上方和下方的材料的厚度为0.05英寸至0.25英寸，但是也可以使用其他厚度。在分配腔之间和之上/之下的材料的厚度由支撑流体压力所需的强度以及制造所需的材料厚度确定。可以调整传热流体分配腔140的厚度以减小流体的压降。可以选择辅助气体分配腔150的尺寸足够大以使得气体能均匀分布到每个注入器112。每层的厚度应该最小化以减小总厚度，从而减少通孔110中的自由基损失。
在一些示例中，顶层163和底层167的厚度在0.075英寸至0.125英寸的范围内，但是也可以使用其他厚度。在一些示例中，顶层163和底层167的厚度是0.1英寸，但是也可以使用其他厚度。在一些示例中，中间层165的厚度在0.4英寸至0.6英寸的范围内，但是也可以使用其他厚度。在一些示例中，中间层165的厚度是0.5英寸，但是也可以使用其他厚度。在一些示例中，喷头的厚度小于或等于1英寸。在一些示例中，喷头的厚度小于或等于0.7英寸。
在图6和图7中，示出了泄漏收集盘128。泄漏收集盘128包括围绕热流体端口120,122中的至少一个布置的凹部。在一些示例中，凹部是圆筒形的，但是也可以使用其他形状。
在图8A中，一些示例包括圆筒形壁210，其从喷头40的径向外边缘208(径向向内靠近径向外边缘208或与径向外边缘208间隔开)向下朝向衬底36(并且在通孔110和辅助气体注射器112的径向外侧)延伸。圆筒形壁210可以与喷头40集成或附接到喷头40上。圆筒形壁210改善了喷头40和由衬底看到的室壁之间的热均匀性。圆筒形壁210还可用于通过在壁和衬底支撑件34之间产生流动限制装置来控制排放端口泵送不均匀性。在一些示例中，圆筒形壁210在包括衬底支撑件34的顶表面的平面下方延伸。
在图8B中，一些示例包括圆筒形壁211，其从喷头40的径向外边缘208(径向向内靠近径向外边缘208或与径向外边缘208间隔开)向上延伸(并且在通孔110和辅助气体注入器112的径向外侧)。圆筒形壁211可以与喷头40的顶表面集成或附接到喷头40的顶表面。圆筒形壁211提供用于安装自由基源的安装表面。
现在参考图9-图10，一个或多个传热流体分配腔140的示例布置。在图9中，示出了中间层165的顶表面。一个或多个传热流体分配腔140包括第一分配腔156-1。在一些示例中，第一分配腔156-1具有弓形形状，但是也可以使用其他形状。在一些示例中，多个限制装置158-1在第一分配腔156-1的一侧彼此相邻地布置。选择多个限制装置158-1中的每一个之间的间隔以限制和分配从第一分配腔156-1进入第二分配腔156-2的流量。在一些示例中，多个限制装置158-1中的每一个包括具有圆形、椭圆形或长方形形状的柱，但是也可以使用其他形状。多个限制装置158-1可用于使流动通道160之间的流体流动更均匀并消除喷射效应。替代地，一个或多个流动通道160可包括限制装置164以控制流动，如图10所示。如果流动通道160包括限制装置164，则可以省略多个限制装置158-1，并且第一分配腔156-1和第二分配腔156-2可以是单个分配腔。
第二分配腔156-2通向流动通道160的第一端。在一些示例中，流动通道160具有三角形、方波形、弯曲形或大致正弦形形状以增加表面积。流动通道160的第二端连接到布置在喷头40的相对侧的第三分配腔156-3。多个限制装置158-2布置在第三分配腔156-3的一侧上。多个限制装置158-2中的每一个被布置成限制进入第四分配腔156-4的流量。第四分配腔156-4连接到出口。如果流动通道160包括限制装置164，则可以省略多个限制装置158-2，并且第三分配腔156-3和第四分配腔156-4可以是单个分配腔。
在一些示例中，热流体流动通道160具有小于或等于流速的10％的通道到通道的非均匀性。在一些示例中，热流体流速为每分钟10加仑并且将整个喷头表面控制为±1摄氏度。在一些示例中，辅助气体注入器112具有小于或等于质量流速的1％的流动不均匀性。在一些示例中，辅助气体注入器112具有小于或等于质量流速的0.1％的不均匀性。
在图11中，示出了中间层165的底表面。一个或多个辅助气体分配腔150包括气体入口172和与第一分配腔176-1和第二分配腔176-2流体连通的流动通道174。第一多个壁180布置在第一分配腔176-1和第二分配腔176-2之间。多个缝隙184布置在多个壁180的端部之间，以限制第一分配腔176-1和第二分配腔176-2之间的流动。在一些示例中，第一分配腔176-1是环形的，第二分配腔176-2是圆形的，并且第一多个壁180是弓形的，但是也可以使用其他形状。
第二多个壁190围绕通孔110布置。在一些示例中，第二多个壁190具有圆筒形状，但是也可以使用其他形状。在一些示例中，第二多个壁190的顶部边缘提供结合区域以在第二分配腔176-2和通孔110之间形成真空密封。在一些示例中，在辅助气体注入器112的入口处提供多个限制装置186，以控制辅助气体从第二分配腔176-2到下室30的流动。
在一些示例中，缝隙184相对于限制装置186设定尺寸，使得缝隙184处的压降ΔP缝隙明显大于压降ΔP第一分配腔。在一些示例中，ΔP缝隙是ΔP第一分配腔的20倍。在一些示例中，ΔP缝隙是ΔP第一分配腔的5倍。
现在参考图12-14，另一喷头40的中间部分300显示为包括沿其一侧布置的传热流体入口和出口。换句话说，流动通道从入口穿过喷头行进并穿过喷头返回到出口。
在图12中，示出了中间部分300的顶侧。流体入口310连接到流体入口分配腔320。在一些示例中，流体入口分配腔320是弓形的。流到多个流动通道330的入口连接到流体入口分配腔320。多个流动通道330横穿喷头40，转弯并返回到位于入口324中的相邻入口324之间的出口334。尽管流动通道330显示为直的区段，但是非直的流动通道(例如上面所示的那些)也可用于增加表面积和热传递(或者可以使用直的和弯曲的组合)。
出口334穿过中间部分300中的气体通路338到达位于图3中的中间部分300的底侧上的出口分配腔350。出口分配腔350连接到流体出口358。可以理解，中间部分300的底表面还可以包括与上面图11中所示的分配腔类似的辅助气体分配腔。可以改变通路338的尺寸以补偿从通道到通道的不均匀的流速，以实现与使用柱158实现的均匀性相同的均匀性。
本文所述的集成喷头提供足够且均匀的自由基，过滤来自远程等离子体源的离子，提供均匀的温度控制，并提供均匀的前体。在一些示例中，由包括上述传热流体通道的喷头提供的热控制将衬底上的热不均匀性控制为小于5℃。传热流体通道还能够控制包含在上室20的容积空间中的等离子体产生的热量。喷头还包括内部辅助气体分配腔，其向下室提供均匀的前体输送。在一些示例中，来自辅助气体分配腔的气体出口偏离喷头的底表面一预定距离，以最小化在喷头上的沉积并延长清洁之间的时间。
前面的描述本质上仅仅是说明性的，并且决不意图限制本公开、其应用或用途。本公开的广泛教导可以以各种形式实现。因此，尽管本公开包括特定示例，但是本公开的真实范围不应当如此限制，因为在研究附图、说明书和所附权利要求时，其他修改将变得显而易见。应当理解，在不改变本公开的原理的情况下，方法中的一个或多个步骤可以以不同的顺序(或同时地)执行。此外，虽然每个实施方式在上面被描述为具有某些特征，但是关于本公开的任何实施方式描述的那些特征中的任何一个或多个可以在任何其他实施方式的特征中实现和/或与任何其他实施方式的特征组合，即使该组合没有明确描述。换句话说，所描述的实施方式不是相互排斥的，并且一个或多个实施方式彼此的置换保持在本公开的范围内。
使用包括“连接”、“接合”、“耦合”、“相邻”、“邻近”、“在...之上”、“在...上方”、“在…下方”和“设置”的各种术语来描述元件之间(例如，在模块、电路元件、半导体层等之间)的空间和功能关系。除非明确地描述为“直接的”，否则当在上述公开中描述的第一和第二元件之间的关系时，该关系可以是其中在第一和第二元件之间不存在其他中间元件的直接关系，但是也可以是其中在第一和第二元件之间(在空间上或功能上)存在一个或多个中间元件的间接关系。如本文所使用的，短语“A、B和C中的至少一个”应当被解释为意味着使用非排他性逻辑或(OR)的逻辑(A或B或C)，并且不应被解释为表示“A中的至少一个，B中的至少一个和C中的至少一个”。
在一些实现方式中，控制器是系统的一部分，所述系统可以是上述示例的一部分。这样的系统可以包括半导体处理设备，所述半导体处理设备包括一个或多个处理工具、一个或多个室、用于处理的一个或多个平台、和/或特定处理部件(衬底基座、气流系统等)。这些系统可以与用于在半导体衬底或衬底的处理之前、期间和之后控制其操作的电子器件集成。电子器件可以被称为“控制器”，其可以控制一个或多个系统的各种部件或子部件。根据处理要求和/或系统类型，控制器可以被编程以控制本文公开的任何处理，包括处理气体的输送、温度设置(例如加热和/或冷却)、压强设置、真空设置、功率设置、射频(RF)发生器设置、RF匹配电路设置、频率设置、流速设置、流体输送设置、位置和操作设置、衬底输送进出工具以及其他输送工具和/或连接到特定系统或与特定系统接口的装载锁。
广义地说，控制器可以定义为具有接收指令、发出指令、控制操作、启用清洁操作、启用端点测量等的各种集成电路、逻辑、存储器和/或软件的电子设备。集成电路可以包括存储程序指令的固件形式的芯片、数字信号处理器(DSP)、限定为专用集成电路(ASIC)的芯片、和/或一个或多个微处理器、或执行程序指令(例如，软件)的微控制器。程序指令可以是以各种单个的设置(或程序文件)的形式传送到控制器的指令，所述单个的设置(或程序文件)定义用于在半导体衬底上或为半导体衬底或系统执行特定处理的操作参数。在一些实施方式中，操作参数可以是由工艺工程师定义的配方的一部分，以在一个或多个层、材料、金属、氧化物、硅、二氧化硅、表面、电路和/或衬底的管芯的制备过程中完成一个或多个处理步骤。
在一些实现方式中，控制器可以是计算机的一部分或耦合到计算机，所述计算机与系统集成、耦合到系统、以其他方式联网到系统或这些的组合。例如，该控制器可以在“云”中，或在晶片厂(fab)主机计算机系统的全部或部分中，其使得能够对衬底处理进行远程访问。计算机可以实现对系统的远程访问以监控制备操作的目前进展，研究过去的制备操作的历史，从多个制备操作来研究趋势或性能标准，改变当前处理的参数，设置当前处理之后的处理步骤，或开始新的处理。在一些示例中，远程计算机(例如服务器)可以通过网络(其可以包括本地网络或因特网)向系统提供工艺配方。远程计算机可以包括使得能够输入或编程参数和/或设置的用户接口，然后将所述参数和/或设置从远程计算机传送到系统。在一些示例中，控制器以数据的形式接收指令，所述指令指定在一个或多个操作期间要执行的每个处理步骤的参数。应当理解，对于要执行的处理的类型和与控制器接口或由控制器控制的工具的类型，参数可以是特定的。因此，如上所述，控制器可以是分布式的，例如通过包括一个或多个联网在一起并朝着共同目的(例如，本文所述的处理和控制)而工作的离散控制器。用于这种目的的分布式控制器的示例是在与远程(例如在平台级或作为远程计算机的一部分)定位的一个或多个集成电路通讯的室上的一个或多个集成电路，它们结合以控制在室上的处理。
示例系统可以包括但不限于，等离子体蚀刻室或模块、沉积室或模块、旋转漂洗室或模块、金属电镀室或模块、清洁室或模块、倒角边缘蚀刻室或模块、物理气相沉积(PVD)室或模块、化学气相沉积(CVD)室或模块、原子层沉积(ALD)室或模块、原子层蚀刻(ALE)室或模块、离子注入室或模块、轨道室或模块、以及可以与半导体衬底的制备和/或制造相关联或可以在半导体衬底的制备和/或制造中使用的任何其他半导体处理系统。
如上所述，根据将由工具执行的一个或多个工艺步骤，控制器可以与一个或多个其它工具电路或模块、其他工具部件、群集工具、其它工具接口、相邻工具、邻近工具、位于整个工厂中的工具、主计算机、另一控制器、或在半导体制造工厂中将衬底容器往返工具位置和/或装载端口输送的材料运输中使用的工具通信。

Claims (25)

1.一种衬底处理系统，其包括：
第一室，其包括衬底支撑件；
喷头，其布置在所述第一室上方并被配置成过滤离子且将来自等离子体源的自由基输送到所述第一室，
其中，所述喷头包括：
传热流体分配腔，其包括用于接收传热流体的入口和用于将所述传热流体引导穿过所述喷头的中心部分到达出口以控制所述喷头的温度的多个流动通道；
辅助气体分配腔，其包括用于接收辅助气体的入口和用于将所述辅助气体注入所述第一室的多个辅助气体注入器；和
穿过所述喷头的多个通孔，
其中所述通孔不与所述传热流体分配腔连通，也不与所述辅助气体分配腔流体连通。
2.根据权利要求1所述的衬底处理系统，其中所述传热流体分配腔包括：
与所述入口流体连通的第一分配腔，
其中所述流动通道的第一端与所述第一分配腔连通；和
第二分配腔，其与所述流动通道的相对端流体连通。
3.根据权利要求1所述的衬底处理系统，其中所述传热流体分配腔包括：
与所述入口流体连通的第一分配腔；
与所述流动通道的第一端流体连通的第二分配腔；
第一多个限制装置，其布置在所述第一分配腔和所述第二分配腔之间，以限制其间的流体流动；
与所述流动通道的相对端流体连通的第三分配腔；
与所述出口流体连通的第四分配腔；和
第二多个限制装置，其布置在所述第三分配腔和所述第四分配腔之间，以限制其间的流体流动。
4.根据权利要求1所述的衬底处理系统，其中所述多个流动通道沿径向方向从所述喷头的一侧流动到所述喷头的相对侧。
5.根据权利要求4所述的衬底处理系统，其中所述多个流动通道限定直的路径。
6.根据权利要求4所述的衬底处理系统，其中所述多个流动通道限定弯曲路径。
7.根据权利要求6所述的衬底处理系统，其中所述多个流动通道限定正弦形路径。
8.根据权利要求1所述的衬底处理系统，其中，所述辅助气体分配腔包括：
第一分配腔；
第二分配腔；和
设置在所述第一分配腔和所述第二分配腔之间的流动限制装置。
9.根据权利要求8所述的衬底处理系统，其中，所述流通限制装置包括：
第一多个壁；和
在所述第一多个壁之间限定的多个缝隙。
10.根据权利要求9所述的衬底处理系统，其中所述第一多个壁是弓形的。
11.根据权利要求9所述的衬底处理系统，其还包括围绕所述第二分配腔中的所述通孔布置的第二多个壁。
12.根据权利要求11所述的衬底处理系统，其中所述第二多个壁是圆筒形的。
13.根据权利要求8所述的衬底处理系统，其中，所述辅助气体注入器与所述第二分配腔流体连通。
14.根据权利要求13所述的衬底处理系统，其还包括布置在所述第二分配腔和所述辅助气体注入器之间的多个限制装置。
15.根据权利要求1所述的衬底处理系统，其中所述多个流动通道包括入口和出口，其中所述多个流动通道的所述入口布置在所述喷头的一侧上，所述多个流动通道的所述出口布置在所述一侧上在所述入口之间，并且所述多个流动通道连接到所述入口，穿过所述喷头行进并返回穿过所述喷头到达所述出口。
16.根据权利要求1所述的衬底处理系统，其还包括：
第二室，其布置在所述第一室上方，其中所述喷头布置在所述第一室和所述第二室之间；
围绕所述第二室布置的线圈；和
RF发生器，其连接到所述线圈以在所述第二室中产生等离子体。
17.根据权利要求1所述的衬底处理系统，其中，所述流动通道中的至少一个包括流动限制装置。
18.根据权利要求1所述的衬底处理系统，其中所述传热流体包括液体。
19.根据权利要求1所述的衬底处理系统，其中所述传热流体包括气体。
20.根据权利要求1所述的衬底处理系统，其中所述传热流体不流入所述第一室。
21.根据权利要求1所述的衬底处理系统，其中所述辅助气体注入器从所述喷头的底表面延伸预定距离，其中所述预定距离在0.1英寸至1.5英寸的范围内。
22.根据权利要求1所述的衬底处理系统，其中所述通孔的直径在0.05英寸至0.3英寸的范围内。
23.根据权利要求1所述的衬底处理系统，其中所述喷头包括圆筒形壁，所述圆筒形壁从所述喷头的底表面延伸并且位于所述多个通孔和所述多个辅助气体注入器的径向外侧。
24.根据权利要求1所述的衬底处理系统，其中，所述喷头包括圆筒形壁，所述圆筒形壁从所述喷头的顶表面向上延伸并且位于所述多个通孔和所述多个辅助气体注入器的径向外侧。
25.根据权利要求1所述的衬底处理系统，其还包括：第一O形环，其布置在所述喷头的顶表面和所述上室之间；以及第二O形环，其布置在所述喷头的所述底表面和所述下室之间。
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