TW201446330A - 處理腔室中之清洗及電漿抑制方法及設備 - Google Patents

處理腔室中之清洗及電漿抑制方法及設備 Download PDF

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TW201446330A
TW201446330A TW103103590A TW103103590A TW201446330A TW 201446330 A TW201446330 A TW 201446330A TW 103103590 A TW103103590 A TW 103103590A TW 103103590 A TW103103590 A TW 103103590A TW 201446330 A TW201446330 A TW 201446330A
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baffle
processing chamber
processing system
showerhead
substrate processing
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Patrick Breiling
Kevin Gerber
Jennifer O'loughlin
Nagraj Shankar
Pramod Subramonium
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Novellus Systems Inc
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Abstract

一種基板處理系統，包括：一噴淋頭，其包含基部及柄部，並將前驅物氣體遞送至處理腔室。一擋板包括基部，該基部的外徑大於噴淋頭之基部的外徑；該擋板包含介電材料，並且係設置在噴淋頭之基部與處理腔室的上表面之間。

Description

處理腔室中之清洗及電漿抑制方法及設備
本揭露內容涉及基板處理系統，尤其有關基板處理系統中的清理及電漿抑制。
於此所提供之背景描述係作為概述本揭露內容之上下文的用途。本案發明人的成果（在某種程度上，其係描述於此先前技術章節中）、說明書的實施態樣（其不可具有作為申請時之先前技術的資格），既不明示也不暗示地被承認為對比本揭露內容的先前技術。
例如電漿輔助原子層沉積（PEALD）和電漿輔助化學氣相沉積（PECVD）之基板處理系統可用以沉積及蝕刻基板（如半導體晶圓）上的膜。一些PEALD和PECVD系統包括將前驅物供應至處理腔室之吊燈式噴淋頭。
噴淋頭通常包括柄部（其延伸至處理腔室內）及頭部（其連接至柄部）。腔體係形成在頭部後方、介於頭部與處理腔室的上表面之間。此容積中的寄生電漿（parasitic plasma）可能造成容積之中發生不必要的沉積。
有二種方法用來應對與噴淋頭後方之容積相關的問題。在其一方法中，清理該容積以防止處理氣體在噴淋頭後方，而造成不必要的沉積。然而，噴淋頭後方之清理並未隔開該容積。而未將該容積隔開會使清理所需容積之所需流速增加。清理步驟也需要高清理氣體流量及一些清理氣體流量方向性。由於與處理氣體混合及/或轉移電漿阻抗（其可能造成噴淋頭後方的點燃（light up）），故較高的清理氣體流量傾向於對製程條件造成負面影響。
在另一方法中，使用設備來抑制容積中的電漿，以防止噴淋頭後方之不必要的沉積。電漿抑制在噴淋頭上方產生一阻障，並減少工具之非必要區域中的寄生電漿。
一種基板處理系統，包括：一噴淋頭，其包含基部及柄部，並將前驅物氣體遞送至處理腔室。一擋板包括基部，該基部的外徑大於噴淋頭之基部的外徑。該擋板包含介電材料，並且係設置在噴淋頭之基部與處理腔室的上表面之間。
在其他特徵中，軸環將噴淋頭連接至處理腔室的上表面。擋板包括柄部，該柄部自基部朝處理腔室的上表面延伸。擋板之柄部係設置成圍繞軸環之柄部。
在其他特徵中，擋板之柄部延伸超過處理腔室的上表面。一或更多清理氣體入口將清理氣體供應至定義在擋板與處理腔室的上表面之間的容積。通過介於噴淋頭的徑向外表面與處理腔室的側壁間之縫隙的清理氣體流量係基於擋板的厚度及擋板之縫隙的寬度而改變，以提供一預定的貝克勒數（Peclet number）。噴淋頭不能單純延伸至鄰近的腔室壁。 噴淋頭與壁之間的縫隙防止當噴淋頭由於電性變化或RF電力而被激發時在二元件之間的電弧作用。
在其他特徵中，選擇清理氣體流速、擋板之縫隙的寬度、以及擋板的厚度，以提供大於化等於5的貝克勒數。在一些範例中，介電材料係選自由石英、藍寶石、氧化鋁、及鋁氮化物所組成的群組。雖然可使用小於0.2吋或大於1吋的縫隙，但在一些範例中，擋板之縫隙的寬度小於或等於0.2吋，且擋板的厚度小於或等於1吋。在兩種情況（縫隙小於0.2吋、或大於1吋）下，將必須增加流速以維持貝克勒數大於或等於5，否則貝克勒數可能降低。如可理解般，貝克勒數可能隨著應用而變化。
在其他範例中，介電擋板的厚度可為更厚的多，且可部份或完全填滿介於噴淋頭的上表面與處理腔室的上表面之間的容積。
一種操作基板處理系統的方法，包括將噴淋頭連接至處理腔室的上表面。噴淋頭包括基部及柄部。該方法包括將擋板設置在噴淋頭的基部與處理腔室的上表面之間。擋板之基部的外徑大於噴淋頭之基部的外徑。擋板包含介電材料。
在其他特徵中，軸環係用以將噴淋頭連接至處理腔室的上表面。擋板包括柄部，該柄部自基部朝處理腔室的上表面延伸。擋板之柄部設置成圍繞軸環之柄部。
在其他特徵中，擋板之柄部延伸超過處理腔室的上表面。
在其他特徵中，該方法包括利用一或更多清理氣體入口將清理氣體供應至定義在擋板與處理腔室的上表面之間的容積。
在其他特徵中，該方法包括基於下列因素來選擇通過介於噴淋頭的徑向外表面與處理腔室的側壁間之縫隙的清理氣體流速：擋板的厚度、以及擋板之縫隙的寬度。
在其他特徵中，該方法包括選擇擋板之縫隙的寬度及擋板的厚度，以提供大於或等於5的貝克勒數。該方法包括自石英、藍寶石、氧化鋁、及鋁氮化物所組成的群組中選擇介電材料。該方法包括選擇小於或等於0.2吋之擋板之縫隙的寬度、以及選擇小於或等於1吋之擋板的厚度。
本揭露內容適用之進一步範圍將由以下所提供之實施方式而變得顯而易見。應瞭解到實施方式及具體範例僅意圖作為示例說明之用途，且不欲限制本揭露內容之範圍。
現參考圖1及2，其顯示基板處理系統50之範例，該基板處理系統50包括具有噴淋頭70之處理腔室60。在圖1中，噴淋頭70包括柄部72及頭部74。頭部74定義了噴淋頭70的內腔體75。流體（如前驅物或清理氣體）流過柄部72而到分散板76之上，並流入內腔體75。然後，流體通過在頭部74的底表面中之分隔的孔洞78，並流入處理腔室60。噴淋頭70的柄部72係藉由軸環80而連接至處理腔室60的頂壁。在一些範例中，軸環80具有一般「T形」橫剖面，且包括頭部81及柄部83。
介電擋板100係設置在噴淋頭70的頭部74與處理腔室的上表面（或上板）101之間。介電擋板100包括基部104，其具有中央開口部（或內孔）110、頂表面112及底表面114。基部104可為環形。如可理解般，由介電擋板100所產生的中央開口部（或內孔）110係非必要的。換言之，在一些範例中，軸環80可與擋板結合在一起，且/或可排除中央開口部（或內孔）110。
可選擇清理流速、擋板縫隙G、及介電擋板100的厚度T，以將貝克勒數調整至一預定的貝克勒數。在一些範例中，介電擋板的外徑大於噴淋頭的直徑。換言之，擋板縫隙G小於噴淋頭70的徑向外緣與處理腔室60的側壁間之縫隙。
介電擋板100可亦包括柄部120。柄部120可為圓柱形。介電擋板100可自介電擋板100的徑向內部延伸，而成為與軸環80之柄部83的外表面緊鄰關係。一或更多清理氣體入口130可用來將清理氣體供應至定義在介電擋板100與處理腔室60的上表面101之間的容積內。
圖1中的介電擋板100朝處理腔室60的上表面101部份延伸，但並未完全延伸。相較之下，圖2中的介電擋板100延伸超過處理腔室60的上表面101。
介電擋板100的幾何形狀執行了二個功能。介電擋板100作為氣體空間（gas plenum）。換言之，介電擋板100形成噴淋頭70上方的惰性氣體清理空間，以作為清理該容積、以及產生引導輸出清理氣體流量至處理腔室60之其餘部份的歧管之用途。
介電擋板100亦執行射頻（RF）電漿抑制。換言之，介電擋板100的材料及幾何形狀係加以設計為形成噴淋頭70之頂部上的介電阻障。介電擋板100可亦包括熱傳遞管控特性，並且具有將產生在處理腔室60中之噴淋頭70與基座（未顯示）間的電漿場塑形之合併效果。
介電擋板100係裝設在噴淋頭70上方，並且與軸環80重疊。介電擋板100的幾何形狀朝處理腔室60的側壁延伸，以在噴淋頭70上方實際隔開一腔室容積。
介電擋板100可由具有不同組成物之介電材料所製成，以控制各種功能。材料可具有還原金屬組成物，如金屬的氧化物。此類材料的使用降低了可能的基板（如半導體晶圓）金屬污染。一些金屬氧化物可與用於沉積之前驅物互相作用，並可降低其用量。亦可基於導熱特性來選擇介電材料，以便升高或降低介電擋板100的熱傳導。雖然可使用其他介電材料，但在一些範例中，介電擋板100係由石英所製成。就僅作為例子而言，取決於製程化學作用，可使用例如藍寶石、氧化鋁、或鋁氮化物之材料。還可使用其他介電材料。
介電擋板100操作為氣體分佈歧管，以引導氣體流出該容積。由介電擋板100所定義的氣體分佈歧管係設計成將用以清理（降低擴散）噴淋頭上方之容積的清理氣體流量降低或最佳化。由介電擋板100所定義的氣體分佈歧管將離開氣體引導至處理腔室60的特定區域。這些氣體可被引導至處理腔室60的內徑（ID，inner diameter）以作為空氣簾幕、及產生圍繞噴淋頭70及基座之虛擬同心容積。於處理腔室60之ID處的空氣簾幕也降低了前驅物擴散至處理腔室60的壁部，以減少或防止不必要的沉積。由介電擋板所定義的氣體分配歧管亦可將氣體流量移動更靠近噴淋頭外徑（OD，outer diameter），以增進擴散的降低。
氣體歧管亦可具有徑向上不均勻的流量，以便產生圍繞噴淋頭及基座的有效均勻「簾幕」。此不均勻性係由腔室中的非一致特徵部（如觀察埠及腔室咽喉部，但不限於此）所驅使。
此外，根據本揭露內容之介電擋板抑制了電漿，並且允許清理氣體流量低於上述的習知清理氣體電漿抑制，其降低對製程條件的負面影響。
圖3顯示一模型範例，其說明對前驅物濃度的預期效果。此模型顯示針對不同擋板縫隙及擋板厚度而提供為5的貝克勒數之介電擋板的清理氣體流速。在一些範例中，介電擋板提供大於5的貝克勒數，以減少不必要的前驅物沉積。在模型中，使用了以下方程式：其中Pe為貝克勒數；是指通過開口部的氣體速度，經由開口部而使擴散受到控制（調整製程的溫度及壓力）；d為待控制逆擴散之開口部/區域上方的距離（在此情況下，為擋板的平坦部份之厚度）；以及Dab為用於製程的二氣體之間的擴散係數。
在與沒有介電擋板100的操作相比之下，具有介電100擋板之處理腔室60允許沉積速率增加及改善厚度範圍。介電擋板100亦實現較低的清理流量，並且減少噴淋頭70上方的寄生電漿，同時減少不必要的沉積。
介電擋板100的使用降低了處理腔室60的保養時間及頻率。介電擋板100的使用亦降低基板微粒污染的風險。
雖然根據本揭露內容之介電擋板100係揭示為與PECVD及PEALD製程結合，但介電擋板100亦可用在其他使用噴淋頭70的製程中。就僅作為例子而言，介電擋板100可用在產生保形膜的製程中。
在一些範例中，亦可藉由以下方式而使過渡衝擊效應降到最低：持續流入清理氣體、或在流入處理化學品之前（數秒鐘前）開始清理氣體之流量。
圖4顯示使用根據本揭露內容之介電擋板之方法200的範例。於步驟204，執行步驟以開始處理並在處理腔室60中激發電漿。於步驟208，在處理腔室60中開始清理氣體的流量。雖然在此範例中清理氣體較一或更多前驅物氣體更早開始，但清理氣體的流量可在一或更多前驅物氣體的初始流量之前或之後開始。於步驟212，開始一或更多前驅物氣體的流量。於步驟216，將膜沉積在基板上。
以上敘述本質上僅為示例性，且絕非限制本揭露內容、其應用或使用。可以各種形式來實現本揭露內容的各種教示。因此，雖然本揭露內容包括了特定範例，但由於在研讀圖式、說明書、及以下申請專利範圍之後，其他修改將變得顯而易見，故本揭露內容之範圍不應如此受限。為清楚說明起見，圖式中將使用相同參考數字來辨別類似元件。如本文所使用般，用語「A、B、及C其中至少一者」應理解為表示使用非互斥或邏輯之邏輯（A或B或C）。應瞭解在不改變本揭露內容原理的情況下，可用不同順序（或同時）來執行方法內的一或更多步驟。
50．．．基板處理系統
60．．．處理腔室
70．．．噴淋頭
72．．．柄部
74．．．頭部
75．．．內腔體
76．．．分散板
78．．．孔洞
80．．．軸環
81．．．頭部
83．．．柄部
100．．．介電擋板
101．．．上表面
104．．．基部
110．．．內孔
112．．．頂表面
114．．．底表面
120．．．柄部
130．．．清理氣體入口
200．．．方法
204、208、212、216．．．步驟
本揭露內容由於以下實施方式及隨附圖式而將變得更加被充分瞭解，其中：
圖1係根據本揭露內容之具有噴淋頭及第二清理流量路徑之處理腔室範例的橫剖面圖；
圖2係根據本揭露內容之具有噴淋頭及第二清理流量路徑之處理腔室範例的橫剖面圖；
圖3係一圖表，其繪示作為擋板厚度及擋板縫隙之函數的清理流量差異，以提供一預定的貝克勒數；
圖4係繪示根據本揭露內容之方法之範例的流程圖。
50．．．基板處理系統
60．．．處理腔室
70．．．噴淋頭
72．．．柄部
74．．．頭部
75．．．內腔體
76．．．分散板
78．．．孔洞
80．．．軸環
81．．．頭部
83．．．柄部
100．．．介電擋板
101．．．上表面
104．．．基部
110．．．內孔
112．．．頂表面
114．．．底表面
120．．．柄部
130．．．清理氣體入口

Claims (16)

  1. 一種基板處理系統，包含： 一噴淋頭，包含基部及柄部，並將前驅物氣體遞送至處理腔室；以及 一擋板，包括基部，該基部的外徑大於該噴淋頭之該基部的外徑； 其中該擋板包含介電材料，並且係設置在該噴淋頭之該基部與該處理腔室的上表面之間。
  2. 如申請專利範圍第1項之基板處理系統，更包含： 一軸環，將該噴淋頭連接至該處理腔室的上表面，其中： 該擋板包括柄部，該柄部自該基部朝該處理腔室的該上表面延伸；且 該擋板之該柄部係設置成圍繞該軸環之該柄部。
  3. 如申請專利範圍第2項之基板處理系統，其中該擋板之該柄部延伸超過該處理腔室的該上表面。
  4. 如申請專利範圍第1項之基板處理系統，更包含一或更多清理氣體入口，以將清理氣體供應至定義在該擋板與該處理腔室的該上表面之間的容積。
  5. 如申請專利範圍第2項之基板處理系統，其中通過介於該噴淋頭的徑向外表面與該處理腔室的側壁間之縫隙的清理氣體流量係基於該擋板的厚度及該擋板之該縫隙的寬度而改變，以提供一預定的貝克勒數。
  6. 如申請專利範圍第5項之基板處理系統，其中選擇清理氣體流速、該擋板之該縫隙的寬度、及該擋板的厚度，以提供大於或等於5的貝克勒數。
  7. 如申請專利範圍第1項之基板處理系統，其中該介電材料係選自由石英、藍寶石、氧化鋁、及鋁氮化物所組成的群組。
  8. 如申請專利範圍第5項之基板處理系統，其中該擋板之該縫隙的寬度小於或等於0.2吋，且該擋板的厚度小於或等於1吋。
  9. 一種操作基板處理系統的方法，包含： 將噴淋頭連接至處理腔室的上表面，其中該噴淋頭包括基部及柄部；以及 將擋板設置在該噴淋頭的該基部與該處理腔室的上表面之間， 其中該擋板之該基部的外徑大於該噴淋頭之該基部的外徑，且其中該擋板包含介電材料。
  10. 如申請專利範圍第9項之操作基板處理系統的方法，其中： 一軸環將該噴淋頭連接至該處理腔室的該上表面； 該擋板包括柄部，該柄部自該基部朝該處理腔室的該上表面延伸；且 該擋板之該柄部係設置成圍繞該軸環之該柄部。
  11. 如申請專利範圍第10項之操作基板處理系統的方法，其中該擋板之該柄部延伸超過該處理腔室的該上表面。
  12. 如申請專利範圍第8項之操作基板處理系統的方法，更包含：利用一或更多清理氣體入口將清理氣體供應至定義在該擋板與該處理腔室的該上表面之間的容積。
  13. 如申請專利範圍第10項之操作基板處理系統的方法，更包含基於下列因素來選擇通過介於該噴淋頭的徑向外表面與該處理腔室的側壁間之縫隙的清理氣體流量：該擋板的厚度、以及該擋板之該縫隙的寬度。
  14. 如申請專利範圍第13項之操作基板處理系統的方法，更包含選擇該擋板之該縫隙的寬度及該擋板的厚度，以提供大於或等於5的貝克勒數。
  15. 如申請專利範圍第9項之操作基板處理系統的方法，更包含：自石英、藍寶石、氧化鋁、及鋁氮化物所組成的群組中選擇該介電材料。
  16. 如申請專利範圍第13項之操作基板處理系統的方法，更包含：選擇小於或等於0.2吋之該擋板之該縫隙的寬度，以及選擇小於或等於1吋之該擋板的厚度。
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TWI603782B (zh) 2017-11-01
KR102323167B1 (ko) 2021-11-08
KR102208576B1 (ko) 2021-01-27
US9399228B2 (en) 2016-07-26
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