CN105874609B - 具有低电阻电极的太阳能电芯的模块制造 - Google Patents

具有低电阻电极的太阳能电芯的模块制造 Download PDF

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CN105874609B
CN105874609B CN201580003510.7A CN201580003510A CN105874609B CN 105874609 B CN105874609 B CN 105874609B CN 201580003510 A CN201580003510 A CN 201580003510A CN 105874609 B CN105874609 B CN 105874609B
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battery core
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CN105874609A (zh
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王君俊
傅建明
徐征
杨振凯
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Silevo LLC
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Abstract

本发明的一个实施例提供了一种太阳能模块。该太阳能模块包括:前侧盖、后侧盖、以及位于所述前侧盖和所述后侧盖之间的多个太阳能电芯。每个太阳能电芯包含:多层半导体结构、位于所述多层半导体结构上的前侧电极、以及位于所述多层半导体结构下的后侧电极。其中所述前侧电极和所述后侧电极各自包括金属网格。每个金属网格包括多个指状件线和耦接到所示多个指状件线的单个总线条。该单个总线条被构造成收集来自所述多个指状件线的电流。

Description

具有低电阻电极的太阳能电芯的模块制造
技术领域
本公开总的涉及太阳能电芯的制造。更具体地说,本公开涉及双面隧穿结太阳能电芯的模块制造。
背景技术
化石燃料的负面环境影响和它们不断提高的成本导致对于更清洁、廉价的替代能源的迫切需求。在各种形式的替代能源中,太阳能由于其清洁性和广泛可获得性而受青睐。
太阳能电芯使用光生伏打效应把光转换成电。具有若干种基本的太阳能电芯结构,包括单个p-n结、p-i-n/n-i-p和多结。典型的单个p-n结结构包括p型掺杂层和n型掺杂层。具有单个p-n结的太阳能电芯可以是同质结太阳能电芯或异质结太阳能电芯。如果p掺杂层和n掺杂层都由相同的材料(具有相等带隙的材料)制成,则该太阳能电芯被称为同质结太阳能电芯。相反,异质结太阳能电芯包括至少两层不同带隙的材料。p-i-n/n-i-p结构包括p型掺杂层、n型掺杂层以及夹在p层和n层之间的本征(未掺杂的)半导体层(i层)。多结结构包括不同带隙的多个单结结构堆叠在彼此上。
在太阳能电芯中,光在p-n结附近被吸收,从而生成载流子。载流子扩散到p-n结中并且被内建电场分开,从而在器件和外部电路上产生电流。确定太阳能电芯的一个重要度量就是其能量转换效率,被定义为当太阳能电芯连接到电路时被转换的电力(从吸收光转换成电能)和收集的电力的比例。
图1示出了一个示例性的太阳能电芯(现有技术)的图。太阳能电芯100包括n型掺杂的Si基板102,p+硅发射器层104,前电极网格106,以及Al背电极108。图1中的箭头表示入射的太阳光。从图1可以看出,Al背电极108覆盖太阳能电芯100的整个后侧,从而阻止背侧吸收光。此外,前电极网格106经常包括对太阳光不透明的金属网格,从而在太阳能电芯100的前表面上形成阴影。对于传统的太阳能电芯,前电极网格可以阻挡高达8%的入射太阳光,从而显著地减小了转换效率。
发明内容
本申请的一个实施例提供了一种太阳能模块。该太阳能模块包括:前侧盖;后侧盖;以及位于所述前侧盖和所述后侧盖之间的多个电芯。每个太阳能电芯包含:多层半导体结构;位于所述多层半导体结构上的前侧电极;以及位于所述多层半导体结构下的后侧电极,其中所述前侧电极和所述后侧电极各自包括金属网格,每个金属网格包括多个指状件线和耦接到所示多个指状件线的单个总线条,该单个总线条被构造成收集来自所述多个指状件线的电流。
在本实施例的一个变形例中,所述单个总线条位于所述太阳能电芯的对应表面的中心。
在进一步的变形例中,两个相邻的太阳能电芯被从太阳能电芯的前表面到相邻太阳能电芯的后表面穿行的串接条带串接到一起。所述串接条带被焊接到所述前表面和所述后表面上的单个总线条,所述串接条带的宽度大致等于所述单个总线条的宽度。
在本实施例的一个变形例中,太阳能电芯的前表面和后表面的单个总线条位于相对的边。
在进一步的变形例中,通过金属接片把两个相邻的太阳能电芯耦接到一起,所述金属接片被焊接到位于太阳能电芯的边缘的第一单个总线条以及位于相邻太阳能电芯的相邻边缘的第二单个总线条。所述金属接片的宽度大致等于所述第一和第二单个总线条的长度。
在进一步的变形例中,所述第一单个总线条位于所述太阳能电芯的前表面上,所述第二单个总线条位于相邻的太阳能电芯的后表面上。
在进一步的变形例中,所述第一单个总线条和所述第二单个总线条位于两个太阳能电芯的表面的相同侧。
在进一步的变形例中,通过金属接片把多个太阳能电芯耦接成串,多个串串联或并联地电耦接。
在进一步的变形例中,所述金属接片的长度在3和12mm之间。
在进一步的变形例中,通过把两个相邻的太阳能电芯的边缘重叠而把该两个相邻的太阳能电芯耦接到一起。该两个相邻的太阳能电芯被重叠成使得第一太阳能电芯的上边缘总线条耦接到相邻的第二太阳能电芯的下边缘总线条,从而便于两个相邻的太阳能电芯之间的串联。
在进一步的变形例中,通过把边缘重叠以形成串而耦接多个太阳能电芯,多个串串联或并联地电耦接。
在实施例的一个变形例中,所述多层半导体结构包括:基层,前侧发射器或后侧发射器,以及前表面场层或后表面场层。
在进一步的变形例中,所述多层半导体结构包括位于所述基层两侧的量子隧穿势垒QTB层。
在实施例的一个变形例中,所述金属网格至少包括电镀的Cu层。
在实施例的一个变形例中,所述单个总线条的宽度在0.5和3mm之间。
在实施例的一个变形例中,所述太阳能模块还包括多个最大功率点跟踪MPPT装置。对应的MPPT装置耦接到单独的太阳能电芯,从而便于电芯水平的最大功率点跟踪。
在进一步的变形例中,所述太阳能模块还包括多个最大功率点跟踪MPPT装置,其中对应的MPPT装置耦接到一串太阳能电芯,从而便于串水平的最大功率点跟踪。
在实施例的一个变形例中,所述前侧盖和所述后侧盖是透明的,以便所述太阳能模块的双面构造。
在实施例的一个变形例中,所述多个太阳能电芯至少包括以下之一:5英寸太阳能电芯;6英寸太阳能电芯;以及5英寸或6英寸太阳能电芯的1/8、1/6、1/4、1/3或1/2。
本发明的一个实施例提供了一种太阳能电芯耦接系统。该系统包括:第一太阳能电芯和第二太阳能电芯。每个太阳能电芯包括前侧电极和后侧电极。每个电极包括多个指状件线和耦接到所述多个指状件线的单个总线条,所述总线条位于对应的太阳能电芯的边缘。该系统还包括:金属接片,把所述第一太阳能电芯的前侧电极耦接到所述第二太阳能电芯的后侧电极。
本发明的一个实施例提供了一种太阳能电芯耦接系统。该系统包括:第一太阳能电芯和第二太阳能电芯。每个太阳能电芯包括前侧电极和后侧电极。每个电极包括多个指状件线和耦接到所述多个指状件线的单个总线条,所述总线条位于对应的太阳能电芯的边缘。所述第一太阳能电芯的边缘与第二太阳能电芯的边缘重叠,使得所述第一太阳能电芯的前侧电极的总线条耦接到所述第二太阳能电芯的后侧电极的总线条。
附图说明
图1是表示示例性太阳能电芯(现有技术)的视图。
图2是表示根据本发明的一个实施例的示例性双侧遂穿结太阳能电芯的视图。
图3A是表示传统的太阳能电芯(现有技术)的电极网格的视图。
图3B是表示根据本发明的一个实施例的每个表面具有单个中心总线条的示例性双面太阳能电芯的前面或背面的视图。
图3C是表示根据本发明的一个实施例的每个表面具有单侧中心总线条的双面太阳能电芯的截面的视图。
图3D是表示根据本发明的一个实施例的示例性双面太阳能电芯的前表面的视图。
图3E是表示根据本发明的一个实施例的示例性双面太阳能电芯的背面的视图。
图3F是表示根据本发明的一个实施例的每个表面具有单个边缘总线条的双面太阳能电芯的截面的视图。
图4是表示对于不同的长宽比,电力损失百分比根据网格线(指状件线)长度变化的视图。
图5A是包括多个传统的双总线条太阳能电芯的典型太阳能面板的视图(现有技术)。
图5B是表示根据本发明的一个实施例的包括在中心具有单个总线条的多个太阳能电芯的示例性太阳能面板的视图。
图5C是表示根据本发明的一个实施例的每个表面具有单个边缘总线条的两个相邻太阳能电芯之间的串联连接的视图。
图5D是表示根据本发明的一个实施例的一串太阳能电芯的视图,其中相邻电芯的前侧电极具有相同的极性。
图5E是表示根据本发明的一个实施例的一串太阳能电芯的视图,其中相邻电芯的前侧电极具有相反的极性。
图5F是表示根据本发明的一个实施例的每个表面具有单个边缘总线条的两个相邻太阳能电芯之间的串联连接的视图。
图5G是表示根据本发明的一个实施例的一串相邻的边缘重叠太阳能电芯的侧视图。
图5H是表示根据本发明的一个实施例的两个相邻的边缘重叠太阳能电芯的顶视图。
图5I是表示根据本发明的一个实施例的两个相邻的边缘重叠太阳能电芯的底视图。
图5J是表示根据本发明的一个实施例的包括在边缘具有单个总线条的多个太阳能电芯的示例性太阳能面板的视图。
图6A是表示对于不同类型电芯、不同条带厚度和不同面板构造的双总线条(DBB)以及单总线条(SBB)构造的基于条带电阻的电力损失的视图。
图6B是表示针对不同条带/接片厚度比较串接的条带和单个接片之间的电力损失差异的视图。
图7A是表示根据本发明的一个实施例的具有双总线条太阳能电芯的太阳能面板中设置最大功率点跟踪(MPPT)集成电路(IC)的示例性视图。
图7B是表示根据本发明的一个实施例的具有单中心总线条太阳能电芯的太阳能面板中设置最大功率点跟踪(MPPT)集成电路(IC)的示例性视图。
图7C是表示根据本发明的一个实施例的具有单边缘总线条太阳能电芯的太阳能面板中设置最大功率点跟踪(MPPT)集成电路(IC)的示例性视图。
图7D是表示根据本发明的一个实施例的实现电芯水平的MPPT的示例性太阳能模块的视图。
图8是表示根据本发明的一个实施例制备太阳能电芯模块的过程的流程图。
在附图中,相似的附图标记表示相同的附图元素。
具体实施方式
给出下述描述以便本领域技术人员能够制造和使用各个实施例,并且在特定应用及其要求的语境中提供这些实施例。所公开的实施例的各种修改例对于本领域技术人员是显而易见的,在不脱离本公开的精神和范围的情况下,本文中公开的普遍原理可以应用于其他实施例和应用。因此,本发明不限于所示出的实施例,而是根据与本文公开的原理和特征一致的最宽泛的范围。
概述
本发明的实施例提供了一种高效率的太阳能模块。该太阳能模块包括双面隧穿结太阳能电芯,其中电镀的Cu网格线用作前侧电极和后侧电极。为了减小遮挡和成本,单个总线条或接片被布置在太阳能电芯的前侧和后侧的中心。为了减小遮挡,在一些实施例中,单个Cu总线条或接片被布置在太阳能电芯的前侧和后侧的相对边缘。指状件和总线条都使用生成无遮挡电极的技术来制备。另外,指状件和总线条可以包括大的长宽比铜网格线以确保低电阻。当多个太阳能电芯被串接或接在一起以形成太阳能面板时,基于总线条的位置修改传统的串接/接片处理。与传统的基于单面、双总线条太阳能电芯的太阳能模块相比,本发明的实施例提供了电力增益高达18%的太阳能模块。此外,通过在电芯水平上应用最大功率点跟踪(MPPT)技术,由于部分遮挡的太阳能面板而丢失的功率的30%可以被弥补。
双面遂穿结太阳能电芯
图2是表示根据本发明的一个实施例的示例性双侧遂穿结太阳能电芯的视图。双侧遂穿结太阳能电芯200包括基底202、覆盖基底202的两个表面并且使表面缺陷状态钝化的量子隧穿势垒(QTB)层204和206、形成前发射器208的前侧掺杂的a-Si层、形成BSF层210的后侧掺杂的a-Si层、前透明导电氧化物(TCO)层212、后TCO层214、前金属网格216、以及后金属网格218。注意,还可以在太阳能电芯的后侧具有发射器层并且在前侧具有前表面场(FSF)层。在2010年11月12日提交的、发明人为Jiunn Benjamin Heng、Chentao Yu、ZhengXu和Jianming Fu、名称为“Solar Cell with Oxide Tunneling Junctions”的美国专利申请No.12/945,792(律师档案号No.SSP10-1002US)中可以找到有关双侧遂穿结太阳能电芯200的细节和制作方法。该申请的公开通过引用而全部包含在此。
如图2所示,双侧遂穿结太阳能电芯200的对称结构确保了双侧遂穿结太阳能电芯200在背侧暴露给光的情况下可以是双面的。在太阳能电芯中,金属触点(例如前金属网格216和后金属网格218)对于收集太阳能电芯产生的电流是必要的。总的来说,金属网格包括两种类型的金属线:总线条和指状件。更具体地说,总线条是直接连接到外部引线(例如金属接片)的较宽的金属带,而指状件是收集电流以传递给总线条的指状金属区域。金属网格设计的关键设计权衡是与更宽间隔的网格相关联的电阻损失的增大和由表面高比例的金属覆盖导致的反射和遮挡的增加。在传统的太阳能电芯中,为了防止由于指状件的串联电阻导致的电力损失,至少两个总线条被布置在太阳能电芯的表面以从指状件收集电流,如图3A所示。对于标准的5英寸太阳能电芯(其可以是5×5平方英寸的方形或者具有圆角的伪方形),通常在每个表面具有两个总线条。对于更大的6英寸太阳能电芯(其可以是5×5平方英寸的方形或者具有圆角的伪方形),可能需要三个或更多个总线条,取决于电极材料的电阻。注意,在图3A中,太阳能电芯300的表面(其可以是前表面或后表面)包括多个典型的指状件线,例如指状件线302和304;以及布置成与指状件线垂直的两个总线条306和308。注意,总线条被布置成确保从指状件上任意一点到总线条的距离足够小,以使电力损失最小化。这两个总线条和后续焊接到这些总线条以用于电芯间链接的金属条带能够产生大量遮挡,从而降低了太阳能电芯的性能。
在本发明的一些实施例中,前金属网格和后金属网格(诸如指状件线)可以包括电镀的Cu线(与传统的Ag网格相比具有减小的电阻)。例如,使用电镀或无电极电镀技术,可以获得电阻等于或小于5×10-6Ω·cm的Cu网格线。在2010年7月13日提交的、发明人为JiunnBenjamin Heng、Chentao Yu、Zheng Xu和Jianming Fu、名称为“Solar Cell with MetalGrid Fabricated by Electroplating”的美国专利申请No.12/835,670(律师档案号No.SSP10-1001US)、以及在2011年8月29日提交的、发明人为Jiunn Benjamin Heng、Chentao Yu、Zheng Xu和Jianming Fu、名称为“Solar Cell with Electroplated MetalGrid”的美国专利申请No.13/220,532(律师档案号No.SSP10-1010US)中,可以找到有关电镀铜网格的细节,它们的公开通过引用而全部包含与此。
电阻减小的Cu指状件使得能够通过减少太阳能电芯表面上的总线条的数量来最大化总的太阳能电芯效率的金属网格设计。在本发明的一些实施例中,使用单个总线条来收集指状件的电流。由于从指状件到总线条的距离增大而导致的电力损失可以由减小的遮挡而得到平衡。
图3B是表示根据本发明的一个实施例的每个表面具有单个中心总线条的示例性双面太阳能电芯的前表面或后表面的视图。在图3B中,太阳能电芯310的前表面或后表面包括单个总线条312和若干指状件线,例如指状件线314和316。图3C是表示根据本发明的一个实施例的每个表面具有单个中心总线条的双面太阳能电芯的截面的视图。图3C中所示的半导体多层结构可以与图2所示的半导体多层结构类似。注意,图3C中没有示出指状件线,因为截面位于两个指状件线之间。在图3C所示的例子中,总线条312垂直于纸面进出,指状件线从左向右延伸。像前面讨论的那样,因为每个表面只具有一个总线条,所以从指状件线的边缘到总线条的距离更远。但是,消除一个总线条减少了遮挡,这不仅补偿了由于增大的指状件到总线条距离导致的电力损失,而且还提供了额外的电力增益。对于标准尺寸的太阳能电芯,使用位于电芯中心的单个总线条替换两个总线条可以产生1.8%的电力增益。
图3D是表示根据本发明的一个实施例的示例性双面太阳能电芯的前表面的视图。在图3D中,太阳能电芯320的前表面包括多个水平的指状件线和垂直的单个总线条322,该单个总线条322被布置在太阳能电芯320的右边缘。更具体地说,总线条322接触所有指状件线的最右侧边缘,并且从所有指状件线收集电流。图3E是根据本发明的一个实施例的示例性双面太阳能电芯的后表面的视图。在图3E中,太阳能电芯320的后表面包括多个水平的指状件线和垂直的单个总线条324,该单个总线条324布置在太阳能电芯322的左边缘。类似于总线条322,单个的总线条324接触所有指状件线的最左边缘。图3F表示根据本发明的实施例的每个表面具有单个边缘总线条的双面太阳能电芯的截面的视图。图3F中所示的半导体多层结构类似于图2中所示的半导体多层结构。与图3C类似,在图3F中,指状件线(未示出)从左向右延伸,总线条垂直纸面进出。根据图3D-3F,可以看出在该实施例中,位于双面太阳能电芯的前表面和后表面上的总线条被布置在电芯的相对的边缘。这种构造能够进一步改善电力增益,因为总线条导致的遮挡出现在能量产生效率较小的位置。总的来说,边缘总线条的构造能够提供至少2.1%的电力增益。
注意,每个表面单个总线条的构造(中心总线条或边缘总线条)不仅能够提供电力增益,而且能够减小制造成本,因为总线条带需要更少的金属。此外,在本发明的一些实施例中,面对太阳的前表面上的金属网格可以包括并行的金属线(例如指状件),每个金属线具有弯曲参数的截面,以确保入射到这些金属线上的阳光能够被反射到太阳能电芯的前表面上,从而进一步减小遮挡。通过使用良好受控的、成本有效的图案化方案电镀涂覆有Ag或Sn的Cu,能够实现这种无遮挡的前电极。
还可以通过增大指状件线的长宽比来增加从指状件边缘到总线条的距离,从而减小电力损失效应。图4是表示对于不同的长宽比,电力损失的百分比随网格线(指状件)长度变化的视图。在图4所示的例子中,网格线(或指状物)假定具有60μm的宽度。从图4可以看出,对于长宽比为0.5的网格线,随着网格线长度从30mm增加到100mm,电力损失从3.6%变成7.5%。但是,在例如1.5的更高长宽比的情况下,对于网格线长度同样的增加,电力损失从3.3%变成4.9%。换言之,使用高长宽比的网格线可以进一步改善太阳能电芯/模块性能。可以使用电镀技术来实现这种高长宽比的网格线。在2011年3月15日提交的、发明人为Jiunn Benjamin Heng、Chentao Yu、Zheng Xu和Jianming Fu、名称为“Solar Cell with aShade-Free Front Electrode”的美国专利申请No.13/048,804(律师档案号No.SSP10-1003US)中可以找到有关具有高长宽比的无遮挡电极的细节,其公开通过引用而全部包含在此。
双面太阳能面板
通过典型的面板制备过程(微小改动),每个表面具有单个总线条(在电芯中心或电芯边缘)的多个太阳能电芯可以被组装以形成太阳能模块或面板。基于总线条的位置,需要对串接/接片过程进行不同的改动。在传统的太阳能模块制备中,使用焊接到总线条上的两个串接条带(也成为接片条带)把双总线条太阳能电芯串到一起。更具体地说,串接条带从一个电芯的前表面延伸到相邻电芯的后表面,以把电芯串联。对于电芯中心构造中的单个总线条,串接过程非常类似,除了只需要一个串接条带从一个电芯的前表面延伸到另一个电芯的后表面。
图5A是表示包括多个传统的双总线条太阳能电芯的典型的太阳能面板的视图。在图5A中,太阳能面板500包括太阳能电芯的6×12阵列(具有6行并且每行中有12个电芯)。一行中的相邻太阳能电芯通过两个串接条带彼此串联,例如串接条带502和串接条带504。更具体地说,串接条带把一个太阳能电芯的上电极连接到下一个太阳能电芯的下电极。在每行的末尾,串接条带通过更宽的总线条带(例如总线条带506)与下一行的串接条带连接到一起。在图5A所示的例子中,各行串联连接,其中相邻的两行在一端彼此连接。可替换的,各行可以并联方式彼此连接到一起,其中相邻的行在两端彼此连接。注意,图5A仅示出了太阳能电芯的上侧,太阳能面板的下侧可以非常类似,因为太阳能电芯的双面特性。为了简明,图5A中没有示出垂直于太阳能电芯行(或串接条带)的方向延伸的指状件。
图5B是表示根据本发明的一个实施例的包括在中心具有单个总线条的多个太阳能电芯的示例性太阳能面板的视图。在图5B中,太阳能面板510包括太阳能电芯的6×12阵列。一行中的相邻的太阳能电芯通过单个串接条带(例如条带512)彼此串联连接到一起。像在太阳能面板500中那样,在相邻行末端的单个串接条带通过更宽的总线条带(例如总线条带514)连接到一起。因为只需要一个串接条带来连接相邻的电芯,因此与图5A中的太阳能面板500相比,可以显著减少在制备太阳能面板510中使用的总线条带的总长度。对于6英寸的电芯,连接两个相邻电芯的单个串接条带的长度可以为大约31cm,相比之下,双总线条构造需要62cm的串接条带。注意,这种长度的减小还能够进一步减小串联电阻和制造成本。与图5A类似,在图5B中,各行串联连接。实际上,太阳能电芯行也可以并联连接。同样与图5A类似,指状件线沿垂直于太阳能电芯行(或串接条带)的方向延伸并且没有在图5B中示出。
把图5B与图5A相比,可以看出,为了把具有单个中心总线条的太阳能电芯组装成太阳能面板,只需要在串接/接片过程中进行微小的改动。但是,对于每个表面具有单个边缘总线条的太阳能电芯,需要更多的改动。图5C示出了根据本发明的一个实施例的每个表面具有单个边缘总线条的两个相邻太阳能电芯之间的串联连接。在图5C中,太阳能电芯520和太阳能电芯522通过单个接片524彼此耦接。更具体地说,单个接片524的一端被焊接到位于太阳能电芯520的前表面上的边缘总线条,该单个接片524的另一端被焊接到位于太阳能电芯522的后表面上的边缘总线条,从而把太阳能电芯520和522串联。根据图5C,可以看出,单个接片524的宽度沿着边缘总线条的长度(在垂直于指状件线的方向上),并且大致与边缘总线条的长度相同,并且单个接片524的两端被焊接到沿着其长度的边缘总线条。在一些实施例中,单个接片524的宽度可以在12和16cm之间。另一方面,单个接片524的长度由封装密度或相邻太阳能电芯之间的距离决定,并且可以相当短。在一些实施例中,单个接片524的长度可以在3和12mm之间。在进一步的实施例中,单个接片524的长度可以在3和5mm之间。这种几何构造(更大的宽度和更短的长度)确保了单个接片524具有非常低的串联电阻。指状件线(例如指状件线526)沿着单个接盘524的长度方向延伸。注意,这不同于传统的双总线条构造和单中心总线条构造,其中指状件垂直于连接两个相邻太阳能电芯的串接条带。因此,需要修改传统的标准串接过程,把每个电芯旋转90度,以便如图5C所示把两个太阳能电芯串接。
注意,当所有电芯的前侧电极的极性相同并且所有电芯的后侧电极的极性都是相反极性时,边缘总线条构造能够利用从一个太阳能电芯的前边缘到相邻的太阳能电芯的后边缘延伸的边缘接片良好地工作。此外,当相邻电芯的前侧电极具有不同的极性(并且类似地,相邻电芯的后侧电极也具有不同的极性)时,边缘接片可以把一个太阳能电芯的前侧边缘耦接到相邻的太阳能电芯的前侧边缘,或者把一个太阳能电芯的后侧边缘耦接到相邻的太阳能电芯的后侧边缘。
可以按照这种方式耦接多个太阳能电芯以形成一串,并且多个串可以串联或并联地电耦接。图5D是表示根据本发明的一个实施例的一串太阳能电芯的示意图,其中相邻电芯的前侧电极具有相同的极性。在图5D中,一串太阳能电芯(例如电芯511和513)夹在前玻璃盖501和后盖503之间。更具体地说,这样布置太阳能电芯,使得允许所有电芯的前侧电极为一个极性,并且它们的后侧电极为另一个极性。金属接片(例如接片515和517)通过把太阳能电芯的前边缘总线条及其相邻太阳能电芯的后边缘总线条耦接到一起而把相邻的太阳能电芯串联耦接。在图5D所示的示例中,金属接片515把太阳能电芯511的前边缘总线条507耦接到太阳能电芯513的后边缘总线条509。
图5E是表示根据本发明的一个实施例的一串太阳能电芯的示意图,其中相邻太阳能电芯的前侧电极具有相反的极性。在图5E中,这样布置一串太阳能电芯(例如电芯521和523),使得允许相邻的电芯的前侧电极具有交替的极性,并且类似地,相邻太阳能电芯的后侧电极也具有交替的极性。金属接片(例如接片525和527)通过把两个相邻的前边缘总线条彼此耦接并且把两个相邻的后边缘总线条彼此耦接而串联耦接相邻的太阳能电芯。在图5E所示的例子中,金属接片525把太阳能电芯521的前边缘总线条531耦接到太阳能电芯523的前边缘总线条533(其极性与边缘总线条531的极性相反)。
除了使用单个接片串联连接两个相邻的单总线条太阳能电芯以外,还可以通过重叠对应的边缘总线条而在相邻的太阳能电芯之间建立串联连接。图5F是表示根据本发明的一个实施例的在每个表面具有单个边缘总线条的两个相邻太阳能电芯之间的串联连接的示意图。在图5F中,通过位于太阳能电芯530的上表面的边缘总线条534和位于太阳能电芯532的下表面的边缘总线条536把太阳能电芯530和太阳能电芯532耦接。更具体地说,太阳能电芯532的下表面与太阳能电芯530的上表面在边缘处部分重叠,使得下边缘总线条536被布置在上边缘总线条534的上面并且与之接触。在一些实施例中,边缘总线条534和536可以包括镀覆(使用电镀或无电极镀覆技术)的金属堆叠,其包括多层金属,例如Ni、Cu、Sn、以及Ag。在2010年7月13日提交的、发明人为Jiunn Benjamin Heng、Chentao Yu、Zheng Xu和Jianming Fu、名称为“Solar Cell with Metal Grid Fabricated by Electroplating”的美国专利申请No.12/835,670(律师档案号No.SSP10-1001US)、以及在2011年8月29日提交的、发明人为Jiunn Benjamin Heng、Chentao Yu、Zheng Xu和Jianming Fu、名称为“SolarCell with Electroplated Metal Grid”的美国专利申请No.13/220,532(律师档案号No.SSP10-1010US)中,可以找到镀覆金属堆叠的详细描述,其公开通过引用而被全部包含于此。
在一些实施例中,彼此接触的边缘总线条被焊接到一起,以实现相邻太阳能电芯之间的串联电连接。在进一步的实施例中,焊接可以通过层压处理同时进行,在该层压处理中,边缘重叠的太阳能电芯以及适当的密封剂材料被放置在前侧盖和后侧盖之间,密封剂材料可以包括粘合剂聚合物,例如乙烯乙酸乙烯酯(EVA)。在层压期间,可以施加热和压力以固化密封剂,把太阳能电芯密封在前侧盖和后侧盖之间。同样的热和压力还可以导致接触的边缘总线条(例如总线条534和536)被焊接到一起。注意,如果边缘总线条包括上Sn层,则在相邻太阳能电芯的上总线条和下总线条(例如总线条534和536)之间不必插入额外的焊接或粘接材料。还要注意,因为太阳能电芯是相对柔韧的5英寸或6英寸Si片,在层压处理期间使用的压力可以较大而不必担心电芯会在这种压力下损坏。在一些实施例中,在层压处理期间施加的压力可以大于1.0个大气压,例如1.2个大气压。
图5G是表示根据本发明的一个实施例的一串相邻的边缘重叠的太阳能电芯的侧视图。在图5G中,太阳能电芯540与相邻的太阳能电芯542部分地重叠,后者还与太阳能电芯544部分地重叠(在其相对端)。这样的一串太阳能电芯形成了与屋顶瓦片类似的图案。注意,重叠应当保持为最小,以最小化由于重叠导致的遮挡。在一些实施例中,在太阳能电芯的最边缘(在上表面和下表面二者)布置单个总线条(如图5G所示),从而使遮挡最小化。
因为太阳能电芯是双面的(意味着光从太阳能电芯的上表面和下表面二者进入),所以希望在太阳能电芯的上表面和下表面具有对称布置。图5H是表示根据本发明的一个实施例的两个相邻的边缘重叠的太阳能电芯的顶视图。在图5H中,太阳能电芯550和552在太阳能电芯550的右边缘彼此重叠。太阳能电芯550的上表面(其是示图中的表面)包括彼此平行的多个指状件线(例如指状件线554和556)以及垂直于指状件线的边缘总线条。注意,图5H中没有示出边缘总线条,因为它被太阳能电芯552的左边缘覆盖。类似的,太阳能电芯552的上表面包括彼此平行的多个指状件线(例如指状件线558和560)以及垂直于该指状件线的边缘总线条562。图5I是表示根据本发明的一个实施例的两个相邻的边缘重叠的太阳能电芯的底视图。在图5I中,太阳能电芯550和552在太阳能电芯550的右边缘彼此部分重叠。太阳能电芯550的下表面(其是示图中的表面)包括彼此平行的多个指状件线(例如指状件线564和566)以及与该指状件线垂直的边缘总线条568。类似地,太阳能电芯552的下表面包括彼此平行的多个指状件线(例如指状件线570和572)以及与该指状件线垂直的边缘总线条。注意,图5I中未示出边缘总线条,因为它被太阳能电芯550的右边缘覆盖。在太阳能电芯的上表面和下表面具有相同的金属网格确保了双面的功能性。
图5J是表示根据本发明的一个实施例的包括在边缘具有单个总线条的多个太阳能电芯的示例性太阳能面板的示意图。在图5J中,太阳能面板580包括太阳能电芯的6×12阵列。一行中的太阳能电芯通过单个接片(例如接片582)或通过瓦片图案的边缘重叠而彼此串联连接。在行的末端,不使用更宽的总线条带把来自相邻电芯的串接条带连接到一起(类似于图5A和图5B中所示的例子),这里我们简单地使用充分宽的接片延伸通过相邻行的两个端部电芯的边缘。例如,特别宽的接片584延伸通过电芯586和588的边缘。对于串联连接,特别宽的接片584可以把位于电芯586上表面的总线条与位于电芯588的下表面的总线条连接,这意味着太阳能电芯586和588被布置为使得电芯586的上边缘总线条与电芯588的下边缘总线条对准。注意,如果一行中的太阳能电芯被布置成瓦片图案,则相邻的行可以具有相对的瓦片图案,比如右侧在上或左侧在上。对于并联连接,特别宽的接片584可以连接电芯586和588的两个上总线条/下总线条。如果一行中的太阳能电芯布置成瓦片图案,则所有行的瓦片图案保持相同。与图5A和图5B所示的例子不同,在图5J中,指状件线(未示出)沿着太阳能电芯行的方向延伸。
串接条带或接片还会由于其串联电阻而引入电力损失。总的来说,通过串接条带的串联电阻的分散的电力损失随着电芯的尺寸而增加。此外,使用单个串接条带来替代两个串接条带也增大了这种串联电阻导致的电力损失,因为单个条带的构造意味着每个条带具有更大的电流,而电力损失与电流的平方成比例。为了减小这种电力损失,需要减小串接条带的串联电阻。对于单个的中心总线条构造,通过总线条的宽度确定条带的宽度,其可以在0.5和3mm之间。这样,减小条带的电阻的一种方式是增大其厚度,因为更厚的条带具有更低的电阻。图6A示出了对于不同类型的电芯、不同条带厚度和不同面板构造,双总线条(DBB)构造和单总线条(SBB)构造的基于条带电阻的电力损失的百分比。在图6A所示的例子中,条带被假设为Cu条带。
根据图6A,可以看出,对于200μm厚度的条带,对于具有单总线条(SBB)(位于中心)构造的5英寸电芯的条带电阻导致的电力损失为2.34%,相比之下,双总线条(DBB)构造具有1.3%的电力损失。为了把电力损失限制到小于2%以利用从消除一个总线条减小遮挡而获得的1.8%电力增益,单个串接条带的厚度必须至少为250μm。对于更大的电芯,例如6英寸电芯,情况可能更糟。对于单个中心总线条构造,需要400μm厚度的条带来确保在6英寸电芯中的电力损失小于3%,如电芯602和604所示。注意到,面板中电芯的数量也影响电力损失的量。
400μm是条带厚度的上限,因为更厚的条带会在焊接处理中对电芯造成伤害。更具体地说,更厚的条带会导致电芯的翘曲,这是由于应力以及条带材料和半导体材料之间的热力系数差导致的。此外,如果串接条带太厚,还会开始浮现可靠性的问题。应用超软的条带可以减小应力和翘曲问题,但是在不放弃由总线条遮挡减少带来的增益和条带成本降低的情况下,需要不同的串接方案以有效的把电力损失减到小于2%。在一些实施例中,可以使用其他方法来减小应力和翘曲,包括但不限于:在串接条带的长度内引入卷曲件或弹簧,并且对厚的条带进行点焊。
对于单边缘总线条构造,因为接片宽得多并且短于串接条带,所以由于单个接片的串联电阻导致的电力损失的量小得多。图6B是表示对于不同条带/接片厚度的串接条带和单个接片之间的电力损失差异的比较的图。根据图6B,可以看出,由于单个接片的串联电阻导致的电力损失远小于单个条带的电力损失,如606栏所示。例如,由250μm厚的单个边缘接片导致的电力损失仅为0.37(对于5英寸96电芯面板布局),以及大约1.64%(对于6英寸,60电芯面板布局)。因此,可以看出,即使对于72电芯面板的6英寸电芯,厚度250μm的边缘接片足够厚,其导致的电力损失小于2%,使得在考虑遮挡减小的情况下能够实现总的电力增益。
影响太阳能面板的电力输出的另一个因素是电芯之间的错配,这可能由部分遮挡的太阳能面板导致。为了使电力输出最大化,可以向太阳能面板中引入最大功率点跟踪(MPPT)装置,以允许被部分遮挡或其它原因遮挡的面板向耦接到面板的电池充电系统传递最大功率。MPPT装置可以管理一串电芯或单个电芯的电力输出。在本发明的一些实施例中,太阳能面板实现电芯水平的MPPT,意味着每个太阳能电芯耦接至MPPT装置,例如MPPT集成电路(IC)芯片。
在电芯水平上实现MPPT使得其能够补偿由于错配低效率损失的电力的30%。此外,其消除了电芯分级的需求并且可以增大产率。这样,通过消除安装者匹配一个串中面板的库存管理需求以及减小保修预留(因为替换面板不再需要与旧系统匹配),能够显著地改善阵列所有者的投资回报(ROI)。电芯水平的MPPT还可以增加用于安装太阳能阵列的可用表面积,特别是在一天中的特定时间或一年中的特定季节存在阵列的结构性遮挡的情况下。这对于在前侧和后侧都受到遮挡的双面模块特别有用。电芯水平的MPPT还允许系统安装的更大的灵活性,使得能够使用1轴或2轴跟踪器,并且地面安装到高散射光背景中。在2011年10月4日提交的、发明人为Christopher James Beitel、Jiunn Benjamin Heng、Jianming Fu、以及Zheng Xu、名称为“Solar Panels with Integrated Cell-Level MPPTDevices”的美国专利申请No.13/252,987(律师档案号No.SSP10-1011US)中,可以找到有关电芯水平的MPPT的细节,它的公开通过引用而全部包含与此。在另外一些实施例中,太阳能模块可以每串太阳能电芯具有一个MPPT装置,从而便于串水平的MPPT。
图7A是表示根据本发明的一个实施例的在具有双总线条太阳能电芯中放置最大功率点跟踪(MPPT)集成电路(IC)芯片的例子的图。在图7A所示的例子中,MPPT IC芯片(例如MPPT IC芯片702)被布置在相邻的太阳能电芯之间。更具体地说,MPPT IC芯片可以被布置在两个串接条带之间。在一些实施例中,MPPT IC芯片可以与两个串接条带接触并且便于两个相邻的太阳能电芯之间的串联连接。
图7B是表示根据本发明的一个实施例的把最大功率点跟踪(MPPT)集成电路(IC)芯片布置在具有单中心总线条太阳能电芯的太阳能面板中的例子的示意图。与图7A所示的例子类似,MPPT IC芯片(例如MPPT IC芯片704)被布置在两个相邻的太阳能电芯之间。在一些实施例中,MPPT IC芯片是三端子装置,其中两个来自一个电芯的输入端,以及一个向相邻电芯的输出端。两个输入端可以被连接到第一太阳能电芯的上电极和下电极(通过对应的串接条带),并且一个输出端可以被连接到相邻的太阳能电芯的上电极或下电极,以便两个电芯之间的串联连接。
除了把MPPT IC芯片布置在相邻的太阳能电芯之间,还可以把MPPT IC芯片布置在太阳能电芯之间的角部间隔处。图7C是表示根据本发明的一个实施例的具有单边缘总线条太阳能电芯的太阳能面板中布置最大功率点跟踪(MPPT)集成电路(IC)芯片的例子的示意图。在图7C所示的例子中,MPPT IC芯片(例如MPPT IC芯片706)布置在太阳能电芯之间的角部间隔处。在一些实施例中,MPPT IC芯片与单个接片接触,以便于两个相邻芯片之间的串联连接。注意,对于单边缘总线条构造,需要太阳能电芯外部的引线来把太阳能电芯的相对侧的前电极和后电极与MPPT IC芯片的两个输入连接。
图7D是表示根据本发明的一个实施例的实现电芯水平的MPPT的示例性太阳能模块的示意图。在图7D中,太阳能模块710中的每个太阳能电芯包括上电极和下电极,其可以是图7B中所示的单个中心总线条。每个MPPT IC芯片包括顶部输入端子、底部输入端子以及底部输出端子。例如,MPPT IC芯片712包括顶部输入端子714、底部输入端子716以及输出端子718。顶部输入端子714和底部输入端子716耦接到太阳能电芯的顶部电极和底部电极。输出端子718耦接到相邻的太阳能电芯的底部电极。在图7D所示的例子中,太阳能电芯(例如太阳能电芯720)可以是双侧隧穿结太阳能电芯。太阳能电芯和MPPT IC芯片被埋置在粘合剂聚合物层722内,该粘合剂聚合物层722后续会被固化。可以用于形成粘合剂聚合物层722的材料包括,但不限于,乙烯乙酸乙烯酯(EVA)、丙烯酸、聚碳酸酯、聚烯烃以及热塑料。太阳能模块710还包括前侧盖724和后侧盖726。对于双面模块,前侧盖724和后侧盖726都可以由玻璃制成。当固化粘合剂聚合物层722时,前侧盖724和后侧盖726被层压,把太阳能电芯和MPPT IC芯片密封在其中,从而防止由于暴露给环境因素而导致损坏。在层压之后,太阳能模块710可以被修剪并放置到框架728中,然后就准备好连接到适当的接线盒。
图8是表示根据本发明的一个实施例的制造太阳能电芯模块的过程的流程图。在制造过程中,获得包括多层半导体结构的太阳能电芯(操作802)。在一些实施例中,多层半导体结构可以包括双侧隧穿结太阳能电芯。太阳能电芯可以具有标准尺寸,例如5英寸乘5英寸或者6英寸乘6英寸。在一些实施例中,太阳能电芯的最小尺寸是至少5英寸。然后沉积前侧金属网格和后侧金属网格,以完成双面太阳能电芯制造(操作804)。在一些实施例中,沉积前侧金属网格和后侧金属网格可以报考电镀涂覆有Ag或Sn的Cu网格。在进一步的实施例中,可以使用物理气相沉积(PVD)技术在多层结构上沉积一个或多个种子金属层,例如种子Cu或Ni层,从而改善电镀的Cu层的粘和性。可以形成不同类型的金属网格,包括但不限于:中心具有单个总线条的金属网格、电芯边缘具有单个总线条的金属网格。注意,对于边缘总线条构造,在太阳能电芯的前表面和后表面的总线条被布置在相对的边缘。
接下来,太阳能电芯被串接到一起以形成太阳能电芯串(操作806)。注意,取决于总线条构造,可能需要修改传统的串接过程。对于边缘总线条构造,每个太阳能电芯需要被旋转90度,使用与电芯边缘一样宽并且在3和12mm之间的单个接片来连接两个相邻的太阳能电芯。在一些实施例中,单个接片的长度可以在3和5mm之间。
然后,多个太阳能电芯可以被布局成阵列,并且前侧盖可以被施加到太阳能电芯阵列上(操作808)。对于实现电芯水平的MPPT的太阳能模块,MPPT IC芯片被布置在适当的位置,包括但不限于:太阳能电芯之间的角落间隔、以及相邻太阳能电芯之间的位置(操作810)。然后通过修改的接片处理把不同行的太阳能电芯彼此连接(操作812),然后,形成MPPT IC芯片和对应的太阳能电芯电极之间的电连接,以实现完全互连的太阳能模块(操作814)。更具体地说,通过典型的半导体手段(包括但不限于:焊料凸点、倒装、通过接触封装等),太阳能电芯的上电极被连接到IC的一个端子,下电极被连接到IC的另一个端子。接下来,后侧盖被施加(操作816),整个太阳能模块组件可以进行标准的层压处理,在层压处理能够原位密封电芯和MPPT IC,然后进行加框和修剪(操作820),以及附接到接线盒(操作822)。
给出上述各种实施例的描述仅用于说明和描述目的。它们不是排他性或把本发明限制在所公开的形式。因此,对于本领域技术人员,许多修改和变型是清楚的。另外,上述公开无意限制本发明。

Claims (11)

1.一种太阳能模块,包括:
多个连接的太阳能电芯,其中,每个太阳能电芯包含:
多层半导体结构,所述多层半导体结构具有第一极性表面和第二极性表面,其中所述第二极性与第一极性相对;
位于所述第一极性表面上的第一电极;以及
位于所述第二极性表面上的第二电极,
其中所述第一电极和所述第二电极各自包括多个指状件线和耦接到所述多个指状件线的单个总线条,
所述第一极性表面和第二极性表面各自仅有一个边缘附近的区域被所述单个总线条覆盖;以及
其中所述第一电极的第一单个总线条和所述第二电极的第二单个总线条位于所述太阳能电芯的相对的边缘附近,以及其中两个相邻的太阳能电芯被耦接成使得第一太阳能电芯的所述第一单个总线条与相邻的太阳能电芯的所述第二单个总线条重叠,从而便于两个相邻的太阳能电芯之间的串联。
2.根据权利要求1所述的太阳能模块,其中通过把边缘重叠以形成串而耦接多个太阳能电芯,多个串串联或并联地电耦接。
3.根据权利要求1所述的太阳能模块,其中所述多层半导体结构包括:
基层;
前侧发射器层或后侧发射器层;以及
前表面场层或后表面场层。
4.根据权利要求3所述的太阳能模块,其中所述多层半导体结构包括位于所述基层两侧的量子隧穿势垒QTB层。
5.根据权利要求1所述的太阳能模块,其中所述第一和第二电极各自至少包括电镀的铜层。
6.根据权利要求1所述的太阳能模块,其中所述单个总线条的宽度在0.5和3mm之间。
7.根据权利要求1所述的太阳能模块,还包括多个最大功率点跟踪装置,其中对应的最大功率点跟踪装置耦接到单独的太阳能电芯,从而便于电芯水平的最大功率点跟踪。
8.根据权利要求1所述的太阳能模块,还包括多个最大功率点跟踪装置,其中对应的最大功率点跟踪装置耦接到一串太阳能电芯,从而便于串水平的最大功率点跟踪。
9.根据权利要求1所述的太阳能模块,还包括前侧盖和后侧盖,其中所述前侧盖和所述后侧盖都是透明的,以便所述太阳能模块的双面构造。
10.根据权利要求1所述的太阳能模块,其中所述多个太阳能电芯至少包括以下之一:
5英寸太阳能电芯;
6英寸太阳能电芯;以及
5英寸或6英寸太阳能电芯的1/8、1/6、1/4、1/3或1/2。
11.一种太阳能电芯耦接系统,包括:
彼此连接的第一太阳能电芯和第二太阳能电芯,其中每个太阳能电芯包括位于第一极性表面上的第一电极和位于第二极性表面上的第二电极,每个电极包括多个指状件线和耦接到所述多个指状件线的单个总线条,所述单个总线条位于对应的太阳能电芯的边缘,所述第一极性表面和第二极性表面各自仅有一个边缘附近的区域被所述单个总线条覆盖;
其中所述第一电极的第一单个总线条和所述第二电极的第二单个总线条位于所述太阳能电芯的相对的边缘附近,以及所述第一太阳能电芯的边缘与所述第二太阳能电芯的边缘重叠,使得所述第一太阳能电芯的第一极性表面上的单个总线条与所述第二太阳能电芯的第二极性表面上的单个总线条接触。
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Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9412884B2 (en) * 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
WO2014110520A1 (en) 2013-01-11 2014-07-17 Silevo, Inc. Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US8916038B2 (en) * 2013-03-13 2014-12-23 Gtat Corporation Free-standing metallic article for semiconductors
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
USD913210S1 (en) * 2014-10-15 2021-03-16 Sunpower Corporation Solar panel
USD999723S1 (en) 2014-10-15 2023-09-26 Sunpower Corporation Solar panel
US10056522B2 (en) 2014-12-05 2018-08-21 Solarcity Corporation System and apparatus for precision automation of tab attachment for fabrications of solar panels
US9991412B2 (en) 2014-12-05 2018-06-05 Solarcity Corporation Systems for precision application of conductive adhesive paste on photovoltaic structures
US10043937B2 (en) 2014-12-05 2018-08-07 Solarcity Corporation Systems and method for precision automated placement of backsheet on PV modules
US9685579B2 (en) 2014-12-05 2017-06-20 Solarcity Corporation Photovoltaic structure cleaving system
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US10236406B2 (en) 2014-12-05 2019-03-19 Solarcity Corporation Systems and methods for targeted annealing of photovoltaic structures
US9590132B2 (en) 2014-12-05 2017-03-07 Solarcity Corporation Systems and methods for cascading photovoltaic structures
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9899554B2 (en) * 2015-12-14 2018-02-20 Solarcity Corporation Method of installing a strain relief apparatus to a solar cell
US20170179324A1 (en) * 2015-12-14 2017-06-22 Solarcity Corporation High-efficiency low-cost solar panel with protection circuitry
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US10211356B2 (en) 2015-12-23 2019-02-19 Solarcity Corporation Cell interconnects
CN108713256A (zh) 2016-02-24 2018-10-26 太阳能公司 太阳能电池板
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
JP2019515483A (ja) * 2016-05-06 2019-06-06 アプライド マテリアルズ イタリア エス. アール. エル. 少なくとも2つの太陽電池構成を製造するための装置、少なくとも2つの瓦重ねされた太陽電池を製造するためのシステム、及び、少なくとも2つの太陽電池構成を製造するための方法
US20180090634A1 (en) * 2016-09-23 2018-03-29 Kabushiki Kaisha Toshiba Solar module and photovoltaic power generation system
US10937915B2 (en) 2016-10-28 2021-03-02 Tesla, Inc. Obscuring, color matching, and camouflaging solar panels
TWI601300B (zh) * 2016-11-23 2017-10-01 友達光電股份有限公司 太陽能電池模組
CN106653913A (zh) * 2017-01-24 2017-05-10 泰州乐叶光伏科技有限公司 一种n型双面电池的互联技术
US10560049B2 (en) * 2017-03-01 2020-02-11 Tesla, Inc. System and method for packaging photovoltaic roof tiles
USD841571S1 (en) 2017-08-25 2019-02-26 Flex Ltd. Solar panel
CN110335902A (zh) * 2017-03-09 2019-10-15 伟创力有限公司 叠瓦式阵列太阳能电池及制造包括叠瓦式阵列太阳能电池的太阳能组件的方法
USD841570S1 (en) 2017-08-25 2019-02-26 Flex Ltd Solar cell
CN106881546A (zh) * 2017-04-15 2017-06-23 无锡奥特维科技股份有限公司 一种电池片串焊系统
CN106920854B (zh) * 2017-04-20 2018-07-31 泰州中来光电科技有限公司 一种密集排布的太阳能电池串和制备方法及其组件、系统
US10381973B2 (en) 2017-05-17 2019-08-13 Tesla, Inc. Uniformly and directionally colored photovoltaic modules
US10985688B2 (en) 2017-06-05 2021-04-20 Tesla, Inc. Sidelap interconnect for photovoltaic roofing modules
KR102459719B1 (ko) * 2017-06-14 2022-10-27 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지, 태양전지 모듈과 그 제조 방법
US20200127153A1 (en) * 2017-06-26 2020-04-23 Massachusetts Institute Of Technology Wire interconnection for solar cells
US10734938B2 (en) * 2017-07-21 2020-08-04 Tesla, Inc. Packaging for solar roof tiles
US10857764B2 (en) 2017-07-25 2020-12-08 Tesla, Inc. Method for improving adhesion between glass cover and encapsulant for solar roof tiles
RU2663543C1 (ru) * 2017-08-31 2018-08-07 Общество с ограниченной ответственностью "НТЦ тонкопленочных технологий в энергетике", ООО "НТЦ ТПТ" Способ сборки монолитного солнечного модуля из ячеек фотоэлектрических преобразователей на клеевой слой
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
KR101976175B1 (ko) * 2017-09-20 2019-05-08 엘지전자 주식회사 화합물 태양전지 모듈 및 그 제조 방법
CN107706258A (zh) * 2017-09-27 2018-02-16 浙江晶科能源有限公司 一种电池片串联组件
US10978990B2 (en) 2017-09-28 2021-04-13 Tesla, Inc. Glass cover with optical-filtering coating for managing color of a solar roof tile
US11290052B2 (en) * 2017-10-27 2022-03-29 Mary Ja Ne' Williams Solar ultra-light operated battery and the method thereof
RU2671912C1 (ru) * 2017-11-27 2018-11-07 Общество с ограниченной ответственностью "НТЦ тонкопленочных технологий в энергетике", ООО "НТЦ ТПТ" Электрод для контактирования фотоэлектрических преобразователей
KR20190085786A (ko) * 2018-01-11 2019-07-19 엘지전자 주식회사 화합물 태양전지 모듈
US10454409B2 (en) 2018-02-02 2019-10-22 Tesla, Inc. Non-flat solar roof tiles
US10862420B2 (en) 2018-02-20 2020-12-08 Tesla, Inc. Inter-tile support for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
WO2019172258A1 (ja) * 2018-03-08 2019-09-12 株式会社カネカ 太陽電池モジュール、ガラス建材、及び太陽電池モジュールの製造方法
KR102448204B1 (ko) * 2018-03-20 2022-09-28 가부시키가이샤 가네카 태양 전지 모듈, 유리 건재 및 태양 전지 모듈의 제조 방법
US11431279B2 (en) 2018-07-02 2022-08-30 Tesla, Inc. Solar roof tile with a uniform appearance
CN110767761A (zh) * 2018-07-27 2020-02-07 上海理想万里晖薄膜设备有限公司 一种光伏组件
US11245354B2 (en) 2018-07-31 2022-02-08 Tesla, Inc. Solar roof tile spacer with embedded circuitry
US11082005B2 (en) 2018-07-31 2021-08-03 Tesla, Inc. External electrical contact for solar roof tiles
US11245355B2 (en) 2018-09-04 2022-02-08 Tesla, Inc. Solar roof tile module
US11581843B2 (en) 2018-09-14 2023-02-14 Tesla, Inc. Solar roof tile free of back encapsulant layer
TWI734077B (zh) * 2018-10-23 2021-07-21 財團法人工業技術研究院 太陽光電模組
CN109065656A (zh) * 2018-10-31 2018-12-21 伟创力有限公司 形成用于集成在太阳能电池组件中的有色导电焊带的方法
KR102652350B1 (ko) 2018-11-07 2024-03-29 상라오 신위안 웨동 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지 모듈
WO2020093404A1 (zh) * 2018-11-09 2020-05-14 武宇涛 光伏电池模组及其制备方法
WO2020189240A1 (ja) * 2019-03-20 2020-09-24 株式会社カネカ 太陽電池モジュール及び太陽電池モジュールの製造方法
US11522495B2 (en) * 2019-05-31 2022-12-06 Ricoh Company, Ltd. Photoelectric conversion module and photoelectric conversion module array
US11431280B2 (en) 2019-08-06 2022-08-30 Tesla, Inc. System and method for improving color appearance of solar roofs
CN111244216A (zh) * 2020-01-23 2020-06-05 成都晔凡科技有限公司 叠瓦组件的制造方法及叠瓦组件
TW202211493A (zh) 2020-04-09 2022-03-16 日商鐘化股份有限公司 太陽電池模組
WO2023058423A1 (ja) * 2021-10-04 2023-04-13 ソニーセミコンダクタソリューションズ株式会社 受光素子、測距装置、測距モジュール、電子機器、及び受光素子の製造方法
WO2023248256A1 (en) * 2022-06-25 2023-12-28 Ivan Saha Three-dimensional photovoltaic supercell and a three-dimensional photovoltaic supercell module and method of manufacture of the same
DE102022128223A1 (de) 2022-10-25 2024-04-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Solarzellenmodul und Verfahren zur Herstellung eines Solarzellenmoduls

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4336648A (en) * 1979-11-02 1982-06-29 Licentia Patent-Verwaltungs-G.M.B.H. Method of contacting a solar cell
CN1280393A (zh) * 1999-06-30 2001-01-17 佳能株式会社 太阳能电池组件
CN102148264A (zh) * 2010-12-30 2011-08-10 袁晓 一种具有金属丝电极的硅太阳电池及其制造方法
CN202736932U (zh) * 2012-04-16 2013-02-13 英利能源(中国)有限公司 N型太阳能电池组件及n型太阳能电池片

Family Cites Families (457)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US819360A (en) 1905-03-22 1906-05-01 Edward Newton A Electrical switch.
US2626907A (en) 1951-05-14 1953-01-27 Petrolite Corp Process for breaking petroleum emulsions
US2938938A (en) 1956-07-03 1960-05-31 Hoffman Electronics Corp Photo-voltaic semiconductor apparatus or the like
US3116171A (en) 1961-03-14 1963-12-31 Bell Telephone Labor Inc Satellite solar cell assembly
US3094439A (en) 1961-07-24 1963-06-18 Spectrolab Solar cell system
US3459597A (en) 1966-02-04 1969-08-05 Trw Inc Solar cells with flexible overlapping bifurcated connector
US3676179A (en) 1968-10-03 1972-07-11 Gulf Oil Corp Coated article and method for making same
US3969163A (en) 1974-09-19 1976-07-13 Texas Instruments Incorporated Vapor deposition method of forming low cost semiconductor solar cells including reconstitution of the reacted gases
JPS5758075B2 (zh) 1974-10-19 1982-12-08 Sony Corp
US3961997A (en) 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
US4082568A (en) 1977-05-10 1978-04-04 Joseph Lindmayer Solar cell with multiple-metal contacts
US4193975A (en) 1977-11-21 1980-03-18 Union Carbide Corporation Process for the production of improved refined metallurgical silicon
US4124410A (en) 1977-11-21 1978-11-07 Union Carbide Corporation Silicon solar cells with low-cost substrates
US4342044A (en) 1978-03-08 1982-07-27 Energy Conversion Devices, Inc. Method for optimizing photoresponsive amorphous alloys and devices
US4200621A (en) 1978-07-18 1980-04-29 Motorola, Inc. Sequential purification and crystal growth
US4284490A (en) 1978-09-28 1981-08-18 Coulter Systems Corporation R.F. Sputtering apparatus including multi-network power supply
US4213798A (en) 1979-04-27 1980-07-22 Rca Corporation Tellurium schottky barrier contact for amorphous silicon solar cells
US4251285A (en) 1979-08-14 1981-02-17 Westinghouse Electric Corp. Diffusion of dopant from optical coating and single step formation of PN junction in silicon solar cell and coating thereon
US4315096A (en) 1980-07-25 1982-02-09 Eastman Kodak Company Integrated array of photovoltaic cells having minimized shorting losses
JPS5789269A (en) * 1980-09-26 1982-06-03 Licentia Gmbh Solar battery unit
JPS5839074A (ja) * 1981-08-31 1983-03-07 Mitsubishi Electric Corp 太陽電池の製造方法
EP0078541B1 (en) 1981-11-04 1991-01-16 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Flexible photovoltaic device
US4571448A (en) 1981-11-16 1986-02-18 University Of Delaware Thin film photovoltaic solar cell and method of making the same
US4657060A (en) 1982-03-01 1987-04-14 Graber Industries, Inc. Vertical venetian blind with inline drive
US4431858A (en) 1982-05-12 1984-02-14 University Of Florida Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby
DE3308269A1 (de) 1983-03-09 1984-09-13 Licentia Patent-Verwaltungs-Gmbh Solarzelle
US4586988A (en) 1983-08-19 1986-05-06 Energy Conversion Devices, Inc. Method of forming an electrically conductive member
US4589191A (en) 1983-10-20 1986-05-20 Unisearch Limited Manufacture of high efficiency solar cells
US4514579A (en) 1984-01-30 1985-04-30 Energy Conversion Devices, Inc. Large area photovoltaic cell and method for producing same
DE3419137A1 (de) 1984-05-23 1985-11-28 Bayer Ag, 5090 Leverkusen Verfahren und vorrichtung zur herstellung von halbleiterfolien
US4577051A (en) 1984-09-28 1986-03-18 The Standard Oil Company Bypass diode assembly for photovoltaic modules
US4567642A (en) 1984-09-28 1986-02-04 The Standard Oil Company Method of making photovoltaic modules
US4633033A (en) 1985-02-08 1986-12-30 Energy Conversion Devices, Inc. Photovoltaic device and method
US4617421A (en) 1985-04-01 1986-10-14 Sovonics Solar Systems Photovoltaic cell having increased active area and method for producing same
US4667060A (en) 1985-05-28 1987-05-19 Spire Corporation Back junction photovoltaic solar cell
US4652693A (en) 1985-08-30 1987-03-24 The Standard Oil Company Reformed front contact current collector grid and cell interconnect for a photovoltaic cell module
US4753683A (en) 1985-09-09 1988-06-28 Hughes Aircraft Company Gallium arsenide solar cell system
FR2597662B1 (fr) 1986-04-22 1988-06-17 Thomson Csf Photodiode pin realisee a partir de semi-conducteur amorphe
US4729970A (en) 1986-09-15 1988-03-08 Energy Conversion Devices, Inc. Conversion process for passivating short circuit current paths in semiconductor devices
US4694115A (en) 1986-11-04 1987-09-15 Spectrolab, Inc. Solar cell having improved front surface metallization
DE3708548A1 (de) 1987-03-17 1988-09-29 Telefunken Electronic Gmbh Solarzellenmodul mit parallel und seriell angeordneten solarzellen
US4771017A (en) 1987-06-23 1988-09-13 Spire Corporation Patterning process
US5057163A (en) 1988-05-04 1991-10-15 Astropower, Inc. Deposited-silicon film solar cell
US5698451A (en) 1988-06-10 1997-12-16 Mobil Solar Energy Corporation Method of fabricating contacts for solar cells
US5075763A (en) 1988-09-28 1991-12-24 Kopin Corporation High temperature metallization system for contacting semiconductor materials
JPH06105691B2 (ja) 1988-09-29 1994-12-21 株式会社富士電機総合研究所 炭素添加非晶質シリコン薄膜の製造方法
US4933061A (en) 1988-12-29 1990-06-12 Trifari, Krussman & Fishel, Inc. Electroplating tank
DE3901042A1 (de) 1989-01-14 1990-07-26 Nukem Gmbh Verfahren und vorrichtung zur herstellung eines halbleiter-schichtsystems
US5118361A (en) 1990-05-21 1992-06-02 The Boeing Company Terrestrial concentrator solar cell module
US5091018A (en) 1989-04-17 1992-02-25 The Boeing Company Tandem photovoltaic solar cell with III-V diffused junction booster cell
US5217539A (en) 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
JPH036867A (ja) 1989-06-05 1991-01-14 Mitsubishi Electric Corp 光発電素子の電極構造、形成方法、及びその製造装置
DE4009336A1 (de) 1990-03-23 1991-09-26 Telefunken Systemtechnik Solarzelle
CA2082819C (en) 1990-05-18 2001-10-02 Bp Chemicals (Hitco) Inc. Materials for chemical vapor deposition processes
DK170189B1 (da) 1990-05-30 1995-06-06 Yakov Safir Fremgangsmåde til fremstilling af halvlederkomponenter, samt solcelle fremstillet deraf
US5155051A (en) 1990-06-22 1992-10-13 Sanyo Electric Co., Ltd. Method of manufacturing photovoltaic device
US5213628A (en) 1990-09-20 1993-05-25 Sanyo Electric Co., Ltd. Photovoltaic device
DE4030713A1 (de) 1990-09-28 1992-04-02 Telefunken Systemtechnik Photovoltaischer solargenerator
JPH04245683A (ja) 1991-01-31 1992-09-02 Tonen Corp 太陽電池の製造方法
US5364518A (en) 1991-05-28 1994-11-15 Leybold Aktiengesellschaft Magnetron cathode for a rotating target
US5178685A (en) 1991-06-11 1993-01-12 Mobil Solar Energy Corporation Method for forming solar cell contacts and interconnecting solar cells
DE69224965T2 (de) 1991-06-11 1998-10-29 Ase Americas Inc Verbesserte solarzelle und verfahren zu ihrer herstellung
US5181968A (en) 1991-06-24 1993-01-26 United Solar Systems Corporation Photovoltaic device having an improved collector grid
US5455430A (en) 1991-08-01 1995-10-03 Sanyo Electric Co., Ltd. Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate
US5705828A (en) 1991-08-10 1998-01-06 Sanyo Electric Co., Ltd. Photovoltaic device
US5286306A (en) 1992-02-07 1994-02-15 Shalini Menezes Thin film photovoltaic cells from I-III-VI-VII compounds
US5808315A (en) 1992-07-21 1998-09-15 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having transparent conductive film
JPH06196766A (ja) 1992-12-24 1994-07-15 Fujitsu Ltd 超伝導トランジスタ
JPH0794431A (ja) 1993-04-23 1995-04-07 Canon Inc アモルファス半導体用基板、該基板を有するアモルファス半導体基板、及び該アモルファス半導体基板の製造方法
US5401331A (en) 1993-09-07 1995-03-28 Midwest Research Institute Substrate for thin silicon solar cells
DE4333407C1 (de) 1993-09-30 1994-11-17 Siemens Ag Solarzelle mit einer Chalkopyritabsorberschicht
JPH07249788A (ja) 1994-03-11 1995-09-26 Tonen Corp 太陽電池
JPH07326664A (ja) 1994-05-31 1995-12-12 Fuji Electric Co Ltd ウエハの誘電体分離溝の充填方法
FR2722612B1 (fr) 1994-07-13 1997-01-03 Centre Nat Rech Scient Procede de fabrication d'un materiau ou dispositif photovoltaique, materiau ou dispositif ainsi obteu et photopile comprenant un tel materiau ou dispositif
JP2992464B2 (ja) 1994-11-04 1999-12-20 キヤノン株式会社 集電電極用被覆ワイヤ、該集電電極用被覆ワイヤを用いた光起電力素子及びその製造方法
US5627081A (en) 1994-11-29 1997-05-06 Midwest Research Institute Method for processing silicon solar cells
EP0729189A1 (en) 1995-02-21 1996-08-28 Interuniversitair Micro-Elektronica Centrum Vzw Method of preparing solar cells and products obtained thereof
WO1996034124A1 (en) 1995-04-25 1996-10-31 The Boc Group, Inc. Sputtering system using cylindrical rotating magnetron electrically powered using alternating current
JP3459947B2 (ja) 1996-06-18 2003-10-27 シャープ株式会社 太陽電池の製造方法
US6552414B1 (en) 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
US6017581A (en) 1997-04-18 2000-01-25 Semi-Alloys Company Method for coating lenticular articles
JPH1131834A (ja) 1997-07-10 1999-02-02 Showa Shell Sekiyu Kk ガラスサンドイッチ型太陽電池パネル
US6091019A (en) 1997-09-26 2000-07-18 Sanyo Electric Co., Ltd. Photovoltaic element and manufacturing method thereof
EP0915523A3 (en) 1997-10-29 2005-11-02 Canon Kabushiki Kaisha A photovoltaic element having a back side transparent and electrically conductive layer with a light incident side surface region having a specific cross section and a module comprising said photovoltaic element
US5903382A (en) 1997-12-19 1999-05-11 Rockwell International Corporation Electrodeposition cell with high light transmission
JP2002507835A (ja) 1998-03-13 2002-03-12 ケラー・シュテフェン 太陽電池装置
JP4121603B2 (ja) * 1998-03-18 2008-07-23 シャープ株式会社 太陽電池及びその製造方法及びその接続方法
EP0962989B1 (en) 1998-05-20 2011-01-19 Canon Kabushiki Kaisha Photovoltaic power generating structure
US20070108437A1 (en) 1998-06-08 2007-05-17 Avto Tavkhelidze Method of fabrication of high temperature superconductors based on new mechanism of electron-electron interaction
US6468828B1 (en) 1998-07-14 2002-10-22 Sky Solar L.L.C. Method of manufacturing lightweight, high efficiency photovoltaic module
US6303853B1 (en) 1998-08-06 2001-10-16 Jx Crystals Inc. Shingle circuits for thermophotovoltaic systems
US6232545B1 (en) 1998-08-06 2001-05-15 Jx Crystals Inc. Linear circuit designs for solar photovoltaic concentrator and thermophotovoltaic applications using cell and substrate materials with matched coefficients of thermal expansion
CN1134071C (zh) 1998-11-04 2004-01-07 北京市太阳能研究所 一种太阳能电池及其制作方法
US6488824B1 (en) 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
JP2000164902A (ja) 1998-11-27 2000-06-16 Kyocera Corp 太陽電池
US8076568B2 (en) 2006-04-13 2011-12-13 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US7635810B2 (en) 1999-03-30 2009-12-22 Daniel Luch Substrate and collector grid structures for integrated photovoltaic arrays and process of manufacture of such arrays
US8222513B2 (en) 2006-04-13 2012-07-17 Daniel Luch Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture
US20080011350A1 (en) * 1999-03-30 2008-01-17 Daniel Luch Collector grid, electrode structures and interconnect structures for photovoltaic arrays and other optoelectric devices
US6034322A (en) 1999-07-01 2000-03-07 Space Systems/Loral, Inc. Solar cell assembly
JP2001148500A (ja) 1999-11-22 2001-05-29 Sanyo Electric Co Ltd 太陽電池モジュール
US7199303B2 (en) 2000-03-13 2007-04-03 Sony Corporation Optical energy conversion apparatus
US6538193B1 (en) 2000-04-21 2003-03-25 Jx Crystals Inc. Thermophotovoltaic generator in high temperature industrial process
US6586270B2 (en) 2000-06-01 2003-07-01 Canon Kabushiki Kaisha Process for producing a photovoltaic element
JP5081345B2 (ja) 2000-06-13 2012-11-28 富士フイルム株式会社 光電変換素子の製造方法
US6333457B1 (en) 2000-08-29 2001-12-25 Sunpower Corporation Edge passivated silicon solar/photo cell and method of manufacture
DE10042733A1 (de) 2000-08-31 2002-03-28 Inst Physikalische Hochtech Ev Multikristalline laserkristallisierte Silicium-Dünnschicht-Solarzelle auf transparentem Substrat
JP3490964B2 (ja) 2000-09-05 2004-01-26 三洋電機株式会社 光起電力装置
JP2002134484A (ja) 2000-10-19 2002-05-10 Asm Japan Kk 半導体基板保持装置
US20020189939A1 (en) 2001-06-14 2002-12-19 German John R. Alternating current rotatable sputter cathode
US6620645B2 (en) 2000-11-16 2003-09-16 G.T. Equipment Technologies, Inc Making and connecting bus bars on solar cells
JP4055358B2 (ja) 2000-12-12 2008-03-05 サンケン電気株式会社 半導体装置及びその製造方法
US20020104990A1 (en) 2000-12-19 2002-08-08 Dereus Dana Richard Across-wafer optical MEMS device and protective lid having across-wafer light-transmissive portions
US6927242B2 (en) 2001-01-17 2005-08-09 Mitsui Chemicals, Inc. Resin composition, coating materials containing the same, coating film and process for forming the film
CN1291502C (zh) 2001-03-19 2006-12-20 信越半导体株式会社 太阳能电池及其制造方法
FR2822436B1 (fr) 2001-03-21 2003-08-15 Cit Alcatel Panneau solaire ayant des bornes electriques reparties sur sa surface
WO2002091692A1 (en) 2001-04-13 2002-11-14 Girard Gregory D Ditributed edge switching system for voice-over-packet multiservice network
US7173275B2 (en) 2001-05-21 2007-02-06 Regents Of The University Of Colorado Thin-film transistors based on tunneling structures and applications
JP2003069055A (ja) 2001-06-13 2003-03-07 Sharp Corp 太陽電池セルとその製造方法
US7399385B2 (en) 2001-06-14 2008-07-15 Tru Vue, Inc. Alternating current rotatable sputter cathode
US20030000568A1 (en) 2001-06-15 2003-01-02 Ase Americas, Inc. Encapsulated photovoltaic modules and method of manufacturing same
US6713670B2 (en) 2001-08-17 2004-03-30 Composite Optics, Incorporated Electrostatically clean solar array
US20030118865A1 (en) 2001-08-27 2003-06-26 Marks Tobin J. High work function transparent conducting oxides as anodes for organic light-emitting diodes
US6664589B2 (en) 2001-08-30 2003-12-16 Micron Technology, Inc. Technique to control tunneling currents in DRAM capacitors, cells, and devices
US6563040B2 (en) 2001-10-11 2003-05-13 Pinnacle West Capital Corporation Structure for supporting a photovoltaic module in a solar energy collection system
US6672018B2 (en) 2001-10-12 2004-01-06 Jefferson Shingleton Solar module mounting method and clip
US7469299B2 (en) 2001-10-25 2008-12-23 Verizon Business Global Llc Bridging user agent and a proxy server for supporting network services
CN1180486C (zh) 2001-10-31 2004-12-15 四川大学 透明导电膜前电极晶体硅太阳能电池
US20030116185A1 (en) 2001-11-05 2003-06-26 Oswald Robert S. Sealed thin film photovoltaic modules
JP3902534B2 (ja) 2001-11-29 2007-04-11 三洋電機株式会社 光起電力装置及びその製造方法
US20030121228A1 (en) 2001-12-31 2003-07-03 Stoehr Robert P. System and method for dendritic web solar cell shingling
US6736948B2 (en) 2002-01-18 2004-05-18 Von Ardenne Anlagentechnik Gmbh Cylindrical AC/DC magnetron with compliant drive system and improved electrical and thermal isolation
US6683360B1 (en) 2002-01-24 2004-01-27 Fillfactory Multiple or graded epitaxial wafers for particle or radiation detection
US20030154667A1 (en) 2002-02-20 2003-08-21 Dinwoodie Thomas L. Shingle system
JP4070483B2 (ja) 2002-03-05 2008-04-02 三洋電機株式会社 光起電力装置並びにその製造方法
US20030173217A1 (en) 2002-03-14 2003-09-18 Sputtering Components, Inc. High-power ion sputtering magnetron
DE10213049A1 (de) 2002-03-22 2003-10-02 Dieter Wurczinger Drehbare Rohrkatode
KR20030083953A (ko) 2002-04-24 2003-11-01 김홍근 신용카드 단말기에서 상품권을 가지고 즉시로 결제하는방법 및 그 장치
US7388146B2 (en) 2002-04-24 2008-06-17 Jx Crystals Inc. Planar solar concentrator power module
US6803513B2 (en) 2002-08-20 2004-10-12 United Solar Systems Corporation Series connected photovoltaic module and method for its manufacture
EP1398837A1 (en) 2002-09-09 2004-03-17 Interuniversitair Microelektronica Centrum ( Imec) Photovoltaic device
US7126052B2 (en) 2002-10-02 2006-10-24 The Boeing Company Isoelectronic surfactant induced sublattice disordering in optoelectronic devices
JP2004134672A (ja) 2002-10-11 2004-04-30 Sony Corp 超薄型半導体装置の製造方法および製造装置、並びに超薄型の裏面照射型固体撮像装置の製造方法および製造装置
JP2004193350A (ja) 2002-12-11 2004-07-08 Sharp Corp 太陽電池セルおよびその製造方法
US6870600B2 (en) 2003-01-13 2005-03-22 Nikon Corporation Vibration-attenuation devices and methods using pressurized bellows exhibiting substantially zero lateral stiffness
JP2004235274A (ja) 2003-01-28 2004-08-19 Kyocera Corp 多結晶シリコン基板およびその粗面化法
JP2004304167A (ja) 2003-03-20 2004-10-28 Advanced Lcd Technologies Development Center Co Ltd 配線、表示装置及び、これらの形成方法
US7388147B2 (en) 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
JP4118187B2 (ja) 2003-05-09 2008-07-16 信越半導体株式会社 太陽電池の製造方法
US20050064247A1 (en) 2003-06-25 2005-03-24 Ajit Sane Composite refractory metal carbide coating on a substrate and method for making thereof
DE102004031950A1 (de) 2003-06-26 2005-02-10 Kyocera Corp. Halbleiter/Elektroden-Kontaktstruktur und eine solche verwendendes Halbleiterbauteil
CN2626907Y (zh) 2003-07-01 2004-07-21 何学东 一体化组件的防伪盖
JP3722813B2 (ja) 2003-07-08 2005-11-30 沖電気工業株式会社 埋め込み配線構造の形成方法
EP1654752B1 (en) 2003-08-01 2011-06-29 SGL Carbon SE Holder for supporting wafers during semiconductor manufacture
US7455787B2 (en) 2003-08-01 2008-11-25 Sunpower Corporation Etching of solar cell materials
US7172184B2 (en) 2003-08-06 2007-02-06 Sunpower Corporation Substrate carrier for electroplating solar cells
CN100431177C (zh) 2003-09-24 2008-11-05 三洋电机株式会社 光生伏打元件及其制造方法
JP4515208B2 (ja) 2003-09-25 2010-07-28 富士フイルム株式会社 画像処理方法および装置並びにプログラム
JP4232597B2 (ja) 2003-10-10 2009-03-04 株式会社日立製作所 シリコン太陽電池セルとその製造方法
JP2005123445A (ja) * 2003-10-17 2005-05-12 Canon Inc 光起電力素子および光起電力素子の製造方法
US20050189015A1 (en) 2003-10-30 2005-09-01 Ajeet Rohatgi Silicon solar cells and methods of fabrication
JP2005142268A (ja) 2003-11-05 2005-06-02 Canon Inc 光起電力素子およびその製造方法
JP2007513048A (ja) 2003-12-04 2007-05-24 ダウ・コーニング・コーポレイション 太陽電池グレードのケイ素を生産するための、冶金グレードのケイ素から不純物を除去する方法
DE10357698A1 (de) 2003-12-09 2005-07-14 Schunk Kohlenstofftechnik Gmbh Träger für zu behandelnde Gegenstände sowie Verfahren zur Herstellung eines solchen
JP2005175197A (ja) 2003-12-11 2005-06-30 Canon Inc 太陽電池モジュール及びその製造方法
WO2005069356A1 (ja) 2004-01-15 2005-07-28 Japan Science And Technology Agency 単結晶薄膜の製造方法及びその単結晶薄膜デバイス
WO2005074039A1 (ja) 2004-01-28 2005-08-11 Kyocera Corporation 太陽電池モジュール及び太陽光発電装置
EP1560272B1 (en) 2004-01-29 2016-04-27 Panasonic Intellectual Property Management Co., Ltd. Solar cell module
US20060060238A1 (en) 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
US20080223439A1 (en) 2004-02-19 2008-09-18 Xunming Deng Interconnected Photoelectrochemical Cell
WO2005083799A1 (en) 2004-02-24 2005-09-09 Bp Corporation North America Inc Process for manufacturing photovoltaic cells
US20050252544A1 (en) 2004-05-11 2005-11-17 Ajeet Rohatgi Silicon solar cells and methods of fabrication
EP1598874A1 (en) 2004-05-19 2005-11-23 Dutch Space B.V. Solar cell assembly
US7781672B2 (en) 2004-06-01 2010-08-24 Konarka Technologies, Inc. Photovoltaic module architecture
FR2871157A1 (fr) 2004-06-04 2005-12-09 Aventis Pharma Sa Produits biaryl aromatiques, compositions les contenant et utilisation
US20080128017A1 (en) * 2004-06-24 2008-06-05 Heliodynamics Limited Solar Energy Collection Systems
EP1766490A4 (en) 2004-07-13 2007-12-05 Univ Central Queensland DEVICE FOR DETECTING MAXIMUM DISTRIBUTED POWER FOR SOLAR PANELS
US20080149163A1 (en) * 2004-08-31 2008-06-26 Ron Gangemi System and method for mounting photovoltaic cells
US7087906B2 (en) 2004-09-08 2006-08-08 Nikon Corporation Bellows with spring anti-gravity device
US20060130891A1 (en) 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
US7432119B2 (en) 2005-01-11 2008-10-07 Semileds Corporation Light emitting diode with conducting metal substrate
FR2880989B1 (fr) 2005-01-20 2007-03-09 Commissariat Energie Atomique Dispositif semi-conducteur a heterojonctions et a structure inter-digitee
US7723215B2 (en) 2005-02-11 2010-05-25 Sarnoff Corporation Dark current reduction in back-illuminated imaging sensors and method of fabricating same
US8115093B2 (en) 2005-02-15 2012-02-14 General Electric Company Layer-to-layer interconnects for photoelectric devices and methods of fabricating the same
US20080121932A1 (en) 2006-09-18 2008-05-29 Pushkar Ranade Active regions with compatible dielectric layers
EP1696492B1 (en) 2005-02-25 2012-04-11 Sanyo Electric Co., Ltd. Photovoltaic cell
DE102005013668B3 (de) 2005-03-14 2006-11-16 Universität Stuttgart Solarzelle
US7759158B2 (en) 2005-03-22 2010-07-20 Applied Materials, Inc. Scalable photovoltaic cell and solar panel manufacturing with improved wiring
CN101156249B (zh) 2005-03-29 2011-02-23 京瓷株式会社 太阳能电池元件的捆包方法及太阳能电池元件的捆包体
US7494607B2 (en) 2005-04-14 2009-02-24 E.I. Du Pont De Nemours And Company Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom
DE102005019225B4 (de) 2005-04-20 2009-12-31 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Heterokontaktsolarzelle mit invertierter Schichtstrukturgeometrie
US7375378B2 (en) 2005-05-12 2008-05-20 General Electric Company Surface passivated photovoltaic devices
JP5301758B2 (ja) 2005-05-19 2013-09-25 信越半導体株式会社 太陽電池
US8039731B2 (en) 2005-06-06 2011-10-18 General Electric Company Photovoltaic concentrator for solar energy system
EP1734589B1 (en) 2005-06-16 2019-12-18 Panasonic Intellectual Property Management Co., Ltd. Method for manufacturing photovoltaic module
US20090194233A1 (en) 2005-06-23 2009-08-06 Tokyo Electron Limited Component for semicondutor processing apparatus and manufacturing method thereof
US20070023082A1 (en) 2005-07-28 2007-02-01 Venkatesan Manivannan Compositionally-graded back contact photovoltaic devices and methods of fabricating such devices
US20070023081A1 (en) 2005-07-28 2007-02-01 General Electric Company Compositionally-graded photovoltaic device and fabrication method, and related articles
US7906723B2 (en) 2008-04-30 2011-03-15 General Electric Company Compositionally-graded and structurally-graded photovoltaic devices and methods of fabricating such devices
JP2007123792A (ja) * 2005-09-28 2007-05-17 Kyocera Corp 太陽電池モジュール
JP5171001B2 (ja) 2005-09-30 2013-03-27 三洋電機株式会社 太陽電池モジュールの製造方法、太陽電池セルおよび太陽電池モジュール
CN101548391B (zh) 2005-11-04 2012-01-25 陶氏康宁公司 封装光伏电池
WO2007106180A2 (en) 2005-11-07 2007-09-20 Applied Materials, Inc. Photovoltaic contact and wiring formation
CN101360849B (zh) 2005-11-18 2013-05-15 莱里斯奥鲁斯集团 一种形成多层结构的方法
EP1806684A1 (en) 2005-12-05 2007-07-11 Sap Ag Creation of structured order items during availability check
US20070132034A1 (en) 2005-12-14 2007-06-14 Giuseppe Curello Isolation body for semiconductor devices and method to form the same
US20070137699A1 (en) 2005-12-16 2007-06-21 General Electric Company Solar cell and method for fabricating solar cell
JP2007194580A (ja) 2005-12-21 2007-08-02 E I Du Pont De Nemours & Co 太陽電池電極用ペースト
JP5025135B2 (ja) 2006-01-24 2012-09-12 三洋電機株式会社 光起電力モジュール
EP1816684A2 (en) 2006-02-01 2007-08-08 Sanyo Electric Co. Ltd. Solar battery module
US7769887B1 (en) 2006-02-03 2010-08-03 Sprint Communications Company L.P. Opportunistic data transfer over heterogeneous wireless networks
US8603248B2 (en) 2006-02-10 2013-12-10 Veeco Instruments Inc. System and method for varying wafer surface temperature via wafer-carrier temperature offset
DE102006009194A1 (de) 2006-02-22 2007-08-23 Siegfried Gutfleisch Anordnung aus einer tragenden Gebäudestruktur und einem Solarzellenaufbau
CH696344A5 (fr) 2006-02-22 2007-04-30 Ses Soc En Solaire Sa Film support et procédé de couplage de cellules photovoltaïques.
US20090014055A1 (en) 2006-03-18 2009-01-15 Solyndra, Inc. Photovoltaic Modules Having a Filling Material
US20070235077A1 (en) 2006-03-27 2007-10-11 Kyocera Corporation Solar Cell Module and Manufacturing Process Thereof
US8168880B2 (en) 2006-04-26 2012-05-01 Certainteed Corporation Shingle with photovoltaic element(s) and array of same laid up on a roof
US7737357B2 (en) 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
US8571012B2 (en) 2006-05-12 2013-10-29 Oracle International Corporation Customized sip routing to cross firewalls
US20080035489A1 (en) 2006-06-05 2008-02-14 Rohm And Haas Electronic Materials Llc Plating process
US20070283996A1 (en) 2006-06-13 2007-12-13 Miasole Photovoltaic module with insulating interconnect carrier
US20070283997A1 (en) 2006-06-13 2007-12-13 Miasole Photovoltaic module with integrated current collection and interconnection
JP4290747B2 (ja) 2006-06-23 2009-07-08 シャープ株式会社 光電変換素子およびインターコネクタ付き光電変換素子
WO2008019349A2 (en) 2006-08-04 2008-02-14 Solopower, Inc. Thin film solar cell with finger pattern
US7915517B2 (en) 2006-08-16 2011-03-29 Lau Po K Bifacial photovoltaic devices
US20080047602A1 (en) 2006-08-22 2008-02-28 Guardian Industries Corp. Front contact with high-function TCO for use in photovoltaic device and method of making same
US7893348B2 (en) 2006-08-25 2011-02-22 General Electric Company Nanowires in thin-film silicon solar cells
US20080053519A1 (en) 2006-08-30 2008-03-06 Miasole Laminated photovoltaic cell
DE102006042617B4 (de) 2006-09-05 2010-04-08 Q-Cells Se Verfahren zur Erzeugung von lokalen Kontakten
US20080264477A1 (en) 2006-10-09 2008-10-30 Soltaix, Inc. Methods for manufacturing three-dimensional thin-film solar cells
US7999174B2 (en) 2006-10-09 2011-08-16 Solexel, Inc. Solar module structures and assembly methods for three-dimensional thin-film solar cells
US20080092947A1 (en) 2006-10-24 2008-04-24 Applied Materials, Inc. Pulse plating of a low stress film on a solar cell substrate
DE102006051735A1 (de) 2006-10-30 2008-05-08 Merck Patent Gmbh Druckfähiges Medium zur Ätzung von oxidischen, transparenten, leitfähigen Schichten
US8013474B2 (en) 2006-11-27 2011-09-06 Xslent Energy Technologies, Llc System and apparatuses with multiple power extractors coupled to different power sources
JP2008135655A (ja) 2006-11-29 2008-06-12 Sanyo Electric Co Ltd 太陽電池モジュール、太陽電池モジュールの製造方法、及び太陽電池セル
US20080121276A1 (en) 2006-11-29 2008-05-29 Applied Materials, Inc. Selective electroless deposition for solar cells
JP4429306B2 (ja) 2006-12-25 2010-03-10 三洋電機株式会社 太陽電池セル及び太陽電池モジュール
WO2008078741A1 (ja) 2006-12-26 2008-07-03 Kyocera Corporation 太陽電池モジュール
US7825329B2 (en) 2007-01-03 2010-11-02 Solopower, Inc. Thin film solar cell manufacturing and integration
CN101226968A (zh) 2007-01-17 2008-07-23 易斌宣 降低聚光太阳能电池串联电阻阻值的方法及由该方法获得的聚光太阳能电池
US20080173350A1 (en) 2007-01-18 2008-07-24 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080173347A1 (en) 2007-01-23 2008-07-24 General Electric Company Method And Apparatus For A Semiconductor Structure
JP5687837B2 (ja) 2007-02-16 2015-03-25 ナノグラム・コーポレイションNanoGram Corporation 太陽電池構造体、光起電モジュール及びこれらに対応する方法
JP2008205137A (ja) 2007-02-19 2008-09-04 Sanyo Electric Co Ltd 太陽電池及び太陽電池モジュール
US7534632B2 (en) 2007-02-20 2009-05-19 Advanced Chip Engineering Technology Inc. Method for circuits inspection and method of the same
DE202007002897U1 (de) 2007-02-28 2008-07-10 SCHÜCO International KG Photovoltaisches Solarmodul
US7968792B2 (en) 2007-03-05 2011-06-28 Seagate Technology Llc Quantum dot sensitized wide bandgap semiconductor photovoltaic devices & methods of fabricating same
CN101689580B (zh) 2007-03-16 2012-09-05 Bp北美公司 太阳能电池
EP1973167B1 (en) 2007-03-19 2018-06-13 Panasonic Intellectual Property Management Co., Ltd. Photovoltaic device and method of manufacturing the same
FR2914785B1 (fr) 2007-04-06 2009-05-15 Saint Gobain Ct Recherches Revetement de toiture photovoltaique
US8471141B2 (en) 2007-05-07 2013-06-25 Nanosolar, Inc Structures for low cost, reliable solar roofing
US20080308145A1 (en) 2007-06-12 2008-12-18 Guardian Industries Corp Front electrode including transparent conductive coating on etched glass substrate for use in photovoltaic device and method of making same
KR200438601Y1 (ko) 2007-07-13 2008-02-26 임준희 연필심 깎이
JP5288790B2 (ja) * 2007-08-02 2013-09-11 三洋電機株式会社 太陽電池モジュール及びその製造方法
JP5147332B2 (ja) * 2007-08-27 2013-02-20 三洋電機株式会社 太陽電池モジュール、太陽電池、及びこれらの製造方法
US20090056797A1 (en) 2007-08-28 2009-03-05 Blue Square Energy Incorporated Photovoltaic Thin-Film Solar Cell and Method Of Making The Same
US7709730B2 (en) 2007-09-05 2010-05-04 Skyline Solar, Inc. Dual trough concentrating solar photovoltaic module
US7749883B2 (en) 2007-09-20 2010-07-06 Fry's Metals, Inc. Electroformed stencils for solar cell front side metallization
EP2201605A4 (en) 2007-09-25 2017-12-06 First Solar, Inc Photovoltaic devices including an interfacial layer
TWI371112B (en) 2007-10-02 2012-08-21 Univ Chang Gung Solar energy photoelectric conversion apparatus
WO2009047815A1 (en) 2007-10-12 2009-04-16 System S.P.A. A process for connecting photovoltaic cells in series, a photovoltaic cell connectable in series using the process, and a module obtained with the process
GB2453746A (en) 2007-10-16 2009-04-22 Renewable Energy Corp Asa Parallel interconnection of solar cell units
WO2009052271A1 (en) 2007-10-18 2009-04-23 E. I. Du Pont De Nemours And Company Lead-free conductive compositions and processes for use in the manufacture of semiconductor devices: mg-containing additive
WO2009061963A2 (en) 2007-11-06 2009-05-14 Krause Richard H Photovoltaic roofing systems and methods for installing them
CN103296138A (zh) 2007-11-09 2013-09-11 森普雷姆有限公司 低成本的太阳能电池及其生产方法
US20090139512A1 (en) 2007-11-30 2009-06-04 Lima Daniel D De Solar Line Boiler Roof
AT506129B1 (de) 2007-12-11 2009-10-15 Heic Hornbachner En Innovation Gekrümmte photovoltaik-module und verfahren zu deren herstellung
US8021487B2 (en) 2007-12-12 2011-09-20 Veeco Instruments Inc. Wafer carrier with hub
TWI379425B (en) 2007-12-13 2012-12-11 Nexpower Technology Corp Translucent solar cell and manufacturing method thereof
KR20100093590A (ko) 2007-12-17 2010-08-25 퀄컴 엠이엠스 테크놀로지스, 인크. 후방 측 간섭계 마스크를 구비한 광전변환장치
CN100580957C (zh) 2007-12-28 2010-01-13 中国科学院上海技术物理研究所 亚稳态辅助量子点共振隧穿二极管及工作条件
US8212139B2 (en) 2008-01-18 2012-07-03 Tenksolar, Inc. Thin-film photovoltaic module
TW200947725A (en) 2008-01-24 2009-11-16 Applied Materials Inc Improved HIT solar cell structure
US20090188561A1 (en) 2008-01-25 2009-07-30 Emcore Corporation High concentration terrestrial solar array with III-V compound semiconductor cell
US8222516B2 (en) 2008-02-20 2012-07-17 Sunpower Corporation Front contact solar cell with formed emitter
JP5331131B2 (ja) 2008-02-20 2013-10-30 コーニング インコーポレイテッド ガラスセラミック製中心パイプを備えた太陽熱集熱素子
WO2009104561A1 (ja) 2008-02-21 2009-08-27 シャープ株式会社 太陽電池および太陽電池の製造方法
US8187906B2 (en) 2008-02-28 2012-05-29 Sunlight Photonics Inc. Method for fabricating composite substances for thin film electro-optical devices
US7977220B2 (en) 2008-03-05 2011-07-12 Sri International Substrates for silicon solar cells and methods of producing the same
US20100043863A1 (en) 2008-03-20 2010-02-25 Miasole Interconnect assembly
US7833808B2 (en) 2008-03-24 2010-11-16 Palo Alto Research Center Incorporated Methods for forming multiple-layer electrode structures for silicon photovoltaic cells
US20090250108A1 (en) 2008-04-02 2009-10-08 Applied Materials, Inc. Silicon carbide for crystalline silicon solar cell surface passivation
US20090255574A1 (en) 2008-04-14 2009-10-15 Sierra Solar Power, Inc. Solar cell fabricated by silicon liquid-phase deposition
CN102113130A (zh) 2008-04-29 2011-06-29 应用材料股份有限公司 使用单石模块组合技术制造的光伏打模块
US7964499B2 (en) 2008-05-13 2011-06-21 Samsung Electronics Co., Ltd. Methods of forming semiconductor solar cells having front surface electrodes
TWI513014B (zh) 2008-05-19 2015-12-11 Tatung Co 高性能光電元件
US20090293948A1 (en) 2008-05-28 2009-12-03 Stichting Energieonderzoek Centrum Nederland Method of manufacturing an amorphous/crystalline silicon heterojunction solar cell
US20100229914A1 (en) 2008-06-04 2010-09-16 Solexant Corp. Solar cells with shunt resistance
US8697553B2 (en) 2008-06-11 2014-04-15 Intevac, Inc Solar cell fabrication with faceting and ion implantation
US20110162699A1 (en) 2008-06-12 2011-07-07 Shenkar College Of Engineering And Design Solar cell with funnel-like groove structure
US8338218B2 (en) 2008-06-26 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device module and manufacturing method of the photoelectric conversion device module
DE102008030693A1 (de) 2008-07-01 2010-01-14 Institut Für Solarenergieforschung Gmbh Heterojunction-Solarzelle mit Absorber mit integriertem Dotierprofil
JP2011526737A (ja) 2008-07-03 2011-10-13 アイメック 多重接合太陽電池モジュールおよびそのプロセス
KR101244027B1 (ko) 2008-07-08 2013-03-14 시너스 테크놀리지, 인코포레이티드 플렉서블 태양전지 제조방법
US8183081B2 (en) 2008-07-16 2012-05-22 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a metal layer mask
KR101065752B1 (ko) 2008-08-19 2011-09-19 주식회사 티지솔라 태양전지모듈 및 그 제조방법
KR20100026291A (ko) 2008-08-29 2010-03-10 삼성전자주식회사 박막 태양 전지 모듈 및 그 제조 방법
DE102008045522A1 (de) 2008-09-03 2010-03-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Heterosolarzelle und Verfahren zur Herstellung von Heterosolarzellen
US20150075599A1 (en) 2013-09-19 2015-03-19 Zena Technologies, Inc. Pillar structured multijunction photovoltaic devices
US8637761B2 (en) 2008-09-16 2014-01-28 Silevo, Inc. Solar cells fabricated by using CVD epitaxial Si films on metallurgical-grade Si wafers
US8088675B2 (en) 2008-09-19 2012-01-03 Applied Materials, Inc. Methods of making an emitter having a desired dopant profile
JP2010085949A (ja) 2008-10-03 2010-04-15 Hitachi Displays Ltd 液晶表示装置
US8070925B2 (en) 2008-10-17 2011-12-06 Applied Materials, Inc. Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target
US20100108134A1 (en) 2008-10-31 2010-05-06 Crystal Solar, Inc. Thin two sided single crystal solar cell and manufacturing process thereof
US8586857B2 (en) 2008-11-04 2013-11-19 Miasole Combined diode, lead assembly incorporating an expansion joint
CN102217084A (zh) 2008-11-12 2011-10-12 迈德·尼古垃翰 高效能太阳能面板和系统
US9150966B2 (en) 2008-11-14 2015-10-06 Palo Alto Research Center Incorporated Solar cell metallization using inline electroless plating
KR100993511B1 (ko) 2008-11-19 2010-11-12 엘지전자 주식회사 태양 전지 및 그 제조 방법
US20100132774A1 (en) 2008-12-11 2010-06-03 Applied Materials, Inc. Thin Film Silicon Solar Cell Device With Amorphous Window Layer
US20100147364A1 (en) 2008-12-16 2010-06-17 Solopower, Inc. Thin film photovoltaic module manufacturing methods and structures
DE102008055028A1 (de) 2008-12-19 2010-07-01 Q-Cells Se Solarzelle
KR101539047B1 (ko) 2008-12-24 2015-07-23 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 광기전력 변환 소자 및 그의 제조방법
US7945663B2 (en) 2008-12-29 2011-05-17 Genband Inc. Systems, methods, and computer program products for adaptively adjusting a registration interval of an endpoint
WO2010075606A1 (en) 2008-12-29 2010-07-08 Shaun Joseph Cunningham Improved photo-voltaic device
US20100175743A1 (en) 2009-01-09 2010-07-15 Solopower, Inc. Reliable thin film photovoltaic module structures
US20100186802A1 (en) 2009-01-27 2010-07-29 Peter Borden Hit solar cell structure
US9029181B2 (en) 2009-02-02 2015-05-12 Hanergy Hi-Tech Power (Hk) Limited Two-part screen printing for solar collection grid
DE102009003491A1 (de) 2009-02-16 2010-08-26 Q-Cells Se Solarzellenstring und Solarmodul mit derartigen Solarzellenstrings
CA2655007C (en) * 2009-02-20 2017-06-27 Queen's University At Kingston Photovoltaic cell inverter
DE102009012539A1 (de) 2009-03-10 2010-09-23 Tyco Electronics Amp Gmbh Verbindungsvorrichtung zum Anschluss an ein Solarmodul und Solarmodul mit einer solchen Verbindungsvorrichtung
US8283557B2 (en) 2009-03-10 2012-10-09 Silevo, Inc. Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design
US20120012153A1 (en) 2009-03-11 2012-01-19 Shin-Etsu Chemical Co., Ltd. Connection sheet for solar battery cell electrode, process for manufacturing solar cell module, and solar cell module
KR20100107600A (ko) 2009-03-26 2010-10-06 삼성전자주식회사 태양전지 및 그 제조 방법
US8182662B2 (en) 2009-03-27 2012-05-22 Sputtering Components, Inc. Rotary cathode for magnetron sputtering apparatus
WO2010123974A1 (en) 2009-04-21 2010-10-28 Tetrasun, Inc. High-efficiency solar cell structures and methods of manufacture
US9136415B2 (en) 2009-04-30 2015-09-15 Mitsubishi Electric Corporation Solar battery cell
US20100279492A1 (en) 2009-05-02 2010-11-04 Atomic Energy Council-Institute Of Nuclear Energy Research Method of Fabricating Upgraded Metallurgical Grade Silicon by External Gettering Procedure
JP4797083B2 (ja) 2009-05-15 2011-10-19 シャープ株式会社 薄膜太陽電池モジュール
US20120279548A1 (en) 2009-05-18 2012-11-08 Muench Markus Arrangement and circuit, and method for interconnecting flat solar cells
KR101028971B1 (ko) 2009-05-26 2011-04-19 한국과학기술원 집적형 박막 태양전지 및 그의 제조 방법
US20100300507A1 (en) 2009-06-02 2010-12-02 Sierra Solar Power, Inc. High efficiency low cost crystalline-si thin film solar module
US9537032B2 (en) 2009-06-02 2017-01-03 Solarcity Corporation Low-cost high-efficiency solar module using epitaxial Si thin-film absorber and double-sided heterojunction solar cell with integrated module fabrication
WO2011005447A2 (en) 2009-06-22 2011-01-13 International Business Machines Corporation Semiconductor optical detector structure
JP2011008881A (ja) 2009-06-26 2011-01-13 Toshiba Storage Device Corp 磁気記録装置及び磁気記録媒体
US20110146781A1 (en) 2009-06-26 2011-06-23 E.I. Du Pont De Nemours And Company Process of forming a grid cathode on the front-side of a silicon wafer
US20110005920A1 (en) 2009-07-13 2011-01-13 Seagate Technology Llc Low Temperature Deposition of Amorphous Thin Films
WO2011008881A2 (en) 2009-07-14 2011-01-20 Spectrawatt, Inc. Light conversion efficiency-enhanced solar cell fabricated with downshifting nanomaterial
US8258050B2 (en) 2009-07-17 2012-09-04 Hewlett-Packard Development Company, L.P. Method of making light trapping crystalline structures
CA2769318A1 (en) 2009-07-29 2011-02-03 Cyrium Technologies Incorporated Solar cell and method of fabrication thereof
KR101112487B1 (ko) 2009-08-06 2012-03-09 한국과학기술원 광기전력 장치 및 그 제조 방법
JP5535553B2 (ja) 2009-08-26 2014-07-02 三洋電機株式会社 太陽電池モジュール及び太陽電池
US20110061711A1 (en) 2009-09-12 2011-03-17 Yuhao Luo Building-integrated solar photovoltaic panel
TW201130148A (en) 2009-09-18 2011-09-01 Sanyo Electric Co Solar battery cell, solar battery module, and solar battery system
DE102009043047A1 (de) 2009-09-28 2011-04-14 Schott Solar Ag Solarzelle
WO2011046664A2 (en) 2009-10-15 2011-04-21 Applied Materials, Inc. A barrier layer disposed between a substrate and a transparent conductive oxide layer for thin film silicon solar cells
WO2011050367A2 (en) 2009-10-24 2011-04-28 Photon Energy Systems Manufacturing photovoltaic devices and devices formed
KR101301029B1 (ko) 2009-10-30 2013-08-28 엘지전자 주식회사 박막 태양전지 모듈
US8119901B2 (en) 2009-11-03 2012-02-21 Lg Electronics Inc. Solar cell module having a conductive pattern part
JP5706439B2 (ja) 2009-12-11 2015-04-22 カーゲーテー・グラフィート・テヒノロギー・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 基板支持体
WO2011073971A2 (en) 2009-12-16 2011-06-23 Shenkar College Of Engineering And Design Photovoltaic device and method of its fabrication
US8759664B2 (en) 2009-12-28 2014-06-24 Hanergy Hi-Tech Power (Hk) Limited Thin film solar cell strings
TWI425597B (zh) 2009-12-31 2014-02-01 Kingpak Tech Inc 具有黑色膠體之影像感測器封裝結構
US8895838B1 (en) 2010-01-08 2014-11-25 Magnolia Solar, Inc. Multijunction solar cell employing extended heterojunction and step graded antireflection structures and methods for constructing the same
TWI396292B (zh) 2010-01-11 2013-05-11 Tatung Co 太陽能電池及其製造方法
KR20120135231A (ko) 2010-01-12 2012-12-12 시너칩 유에스에이 코포레이션 비디오 및 오디오용 디지털 상호작용 인터페이스를 통한 멀티미디어 usb 데이터 전송
CN102130190A (zh) 2010-01-20 2011-07-20 美国迅力光能公司 具有改进型电流收集系统的光伏电池
EP2362430A1 (en) 2010-02-18 2011-08-31 SAVIO S.p.A. A photovoltaic module
WO2011104826A1 (ja) 2010-02-24 2011-09-01 トヨタ自動車株式会社 半導体モジュールの製造方法,半導体モジュールおよび製造装置
US20110220182A1 (en) 2010-03-12 2011-09-15 Rfmarq, Inc. Solar Panel Tracking and Performance Monitoring Through Wireless Communication
WO2011123646A2 (en) 2010-03-31 2011-10-06 Mustang Solar, Llc Cylindrical rotating magnetron sputtering cathode device and method of depositing material using radio frequency emissions
US20110245957A1 (en) 2010-04-06 2011-10-06 Applied Materials, Inc. Advanced platform for processing crystalline silicon solar cells
DE102010028189B4 (de) * 2010-04-26 2018-09-27 Solarworld Industries Gmbh Solarzelle
US8686283B2 (en) 2010-05-04 2014-04-01 Silevo, Inc. Solar cell with oxide tunneling junctions
US20120318340A1 (en) 2010-05-04 2012-12-20 Silevo, Inc. Back junction solar cell with tunnel oxide
US20110277816A1 (en) 2010-05-11 2011-11-17 Sierra Solar Power, Inc. Solar cell with shade-free front electrode
US20110277825A1 (en) 2010-05-14 2011-11-17 Sierra Solar Power, Inc. Solar cell with metal grid fabricated by electroplating
US9240513B2 (en) 2010-05-14 2016-01-19 Solarcity Corporation Dynamic support system for quartz process chamber
US20110308573A1 (en) 2010-06-21 2011-12-22 Fraunhofer USA, Inc. Center for Sustainable Energy Systems Devices and methods to create a diffuse reflection surface
TW201203574A (en) 2010-07-14 2012-01-16 Solapoint Corp Solar cell device having an air-bridge type contact
US8846451B2 (en) 2010-07-30 2014-09-30 Applied Materials, Inc. Methods for depositing metal in high aspect ratio features
WO2013022479A2 (en) 2011-08-09 2013-02-14 Solexel, Inc. High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers
WO2012021750A1 (en) 2010-08-11 2012-02-16 Crystal Solar, Inc. Mwt architecture for thin si solar cells
US8946937B2 (en) * 2010-08-18 2015-02-03 Volterra Semiconductor Corporation Switching circuits for extracting power from an electric power source and associated methods
ES2546311T3 (es) 2010-09-07 2015-09-22 Dow Global Technologies Llc Ensamblaje mejorado de células fotovoltaicas
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US8221600B2 (en) 2010-09-23 2012-07-17 Sunpower Corporation Sealed substrate carrier for electroplating
US20120080083A1 (en) 2010-09-30 2012-04-05 Twin Creeks Technologies, Inc. Semiconductor assembly with a metal oxide layer having intermediate refractive index
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US9287175B2 (en) 2010-11-05 2016-03-15 Win Semiconductors Corp. Fabrication method for dicing of semiconductor wafers using laser cutting techniques
US20120125391A1 (en) 2010-11-19 2012-05-24 Solopower, Inc. Methods for interconnecting photovoltaic cells
JP5857237B2 (ja) 2010-11-29 2016-02-10 パナソニックIpマネジメント株式会社 太陽電池セル及び太陽電池モジュール
CN102088040A (zh) 2010-12-09 2011-06-08 泰通(泰州)工业有限公司 双面电池组件
US20120152349A1 (en) 2010-12-17 2012-06-21 Solopower, Inc. Junction box attachment for photovoltaic thin film devices
DE102010061317B4 (de) 2010-12-17 2022-10-06 Hanwha Q Cells Gmbh Siebdruckmaske zur Herstellung einer Elektrodenfingerstruktur für Wafersolarzellen und Verfahren zur Herstellung einer Wafersolarzelle unter Einsatz einer solchen Siebdruckmaske
US20120325671A2 (en) 2010-12-17 2012-12-27 Tel Nexx, Inc. Electroplated lead-free bump deposition
JP5687506B2 (ja) 2011-01-28 2015-03-18 三洋電機株式会社 太陽電池及び太陽電池モジュール
SG192214A1 (en) 2011-01-31 2013-09-30 Shinetsu Chemical Co Screen printing plate for solar cell and method for printing solar cell electrode
US9716196B2 (en) 2011-02-09 2017-07-25 Alta Devices, Inc. Self-bypass diode function for gallium arsenide photovoltaic devices
US20120192932A1 (en) 2011-03-25 2012-08-02 Neo Solar Power Corp. Solar cell and its electrode structure
WO2012135052A1 (en) 2011-03-25 2012-10-04 Kevin Michael Coakley Foil-based interconnect for rear-contact solar cells
US8525191B2 (en) 2011-04-01 2013-09-03 Sabic Innovative Plastics Ip B.V. Optoelectronic devices and coatings therefore
US20130112239A1 (en) 2011-04-14 2013-05-09 Cool Earh Solar Solar energy receiver
US20120285517A1 (en) 2011-05-09 2012-11-15 International Business Machines Corporation Schottky barrier solar cells with high and low work function metal contacts
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
US20120318319A1 (en) 2011-06-17 2012-12-20 Solopower, Inc. Methods of interconnecting thin film solar cells
JP5014503B2 (ja) 2011-06-20 2012-08-29 三洋電機株式会社 太陽電池セル及び太陽電池モジュール
US20120325282A1 (en) 2011-06-24 2012-12-27 Solopower, Inc. Solar cells with grid wire interconnections
EP2546889B1 (en) 2011-07-12 2020-06-17 Airbus Defence and Space GmbH Solar cell assembly and method of fabrication of solar cell assembly
US9000288B2 (en) 2011-07-22 2015-04-07 Space Systems/Loral, Llc Current collector bar and grid pattern for a photovoltaic solar cell
US20130213469A1 (en) 2011-08-05 2013-08-22 Solexel, Inc. High efficiency solar cell structures and manufacturing methods
US20130228221A1 (en) 2011-08-05 2013-09-05 Solexel, Inc. Manufacturing methods and structures for large-area thin-film solar cells and other semiconductor devices
US20140318611A1 (en) 2011-08-09 2014-10-30 Solexel, Inc. Multi-level solar cell metallization
US20150171230A1 (en) 2011-08-09 2015-06-18 Solexel, Inc. Fabrication methods for back contact solar cells
WO2013020590A1 (de) 2011-08-09 2013-02-14 Kioto Photovoltaics Gmbh Rechteckige solarzelle und zugehörige solarzellen-anordnung
KR101969032B1 (ko) 2011-09-07 2019-04-15 엘지전자 주식회사 태양전지 및 이의 제조방법
WO2013046351A1 (ja) * 2011-09-28 2013-04-04 三洋電機株式会社 太陽電池及び太陽電池の製造方法
US20130096710A1 (en) 2011-10-17 2013-04-18 Solopower, Inc. Tracking system and method for solar cell manufacturing
US8853525B2 (en) 2011-11-14 2014-10-07 Prism Solar Technologies, Inc. Frameless photovoltaic module
KR20130081484A (ko) 2012-01-09 2013-07-17 엘지전자 주식회사 박막 태양 전지
KR101449942B1 (ko) 2012-01-17 2014-10-17 주식회사 호진플라텍 전기도금 및 광 유도 도금을 병행하는 태양전지 기판용 도금장치 및 도금 방법
JP2013161855A (ja) * 2012-02-02 2013-08-19 Sharp Corp 太陽電池用インターコネクタおよびインターコネクタ付き太陽電池セル
KR101894585B1 (ko) 2012-02-13 2018-09-04 엘지전자 주식회사 태양전지
US20130206221A1 (en) 2012-02-13 2013-08-15 John Anthony Gannon Solar cell with metallization compensating for or preventing cracking
US10741712B2 (en) 2012-02-15 2020-08-11 Alta Devices, Inc. Photovoltaic module containing shingled photovoltaic tiles and fabrication processes thereof
US9379269B2 (en) 2012-02-29 2016-06-28 Bakersun Bifacial crystalline silicon solar panel with reflector
US9911881B2 (en) 2012-04-03 2018-03-06 Flisom Ag Thin-film photovoltaic device with wavy monolithic interconnects
KR101918738B1 (ko) 2012-04-17 2018-11-15 엘지전자 주식회사 태양 전지
JP2013233553A (ja) * 2012-05-07 2013-11-21 Npc Inc 配線材接続装置
JP5546616B2 (ja) * 2012-05-14 2014-07-09 セリーボ, インコーポレイテッド トンネル酸化物を有する後面接合太陽電池
DE102012010151A1 (de) 2012-05-24 2013-11-28 Manz Ag Thermisch optimierter elektrostatischer Substrathalter
JP5709797B2 (ja) * 2012-05-25 2015-04-30 三菱電機株式会社 太陽電池セルおよび太陽電池モジュール
US9935224B2 (en) 2012-06-05 2018-04-03 Ebfoil, S.R.L. Encapsulating layer adapted to be applied to back-sheets for photovoltaic modules including back-contact cells
US20140000682A1 (en) 2012-06-27 2014-01-02 E I Du Pont De Nemours And Company Integrated back-sheet for back contact photovoltaic module
US9227259B2 (en) 2012-08-22 2016-01-05 International Business Machines Corporation Increasing the efficiency of solar cells by transfer of solder
US9050517B2 (en) 2012-09-05 2015-06-09 Bryan P. Oliver Ski training device and method
US20140102524A1 (en) 2012-10-15 2014-04-17 Silevo, Inc. Novel electron collectors for silicon photovoltaic cells
US9812590B2 (en) 2012-10-25 2017-11-07 Sunpower Corporation Bifacial solar cell module with backside reflector
US9947820B2 (en) 2014-05-27 2018-04-17 Sunpower Corporation Shingled solar cell panel employing hidden taps
US20140124014A1 (en) 2012-11-08 2014-05-08 Cogenra Solar, Inc. High efficiency configuration for solar cell string
US9780253B2 (en) 2014-05-27 2017-10-03 Sunpower Corporation Shingled solar cell module
US20140124013A1 (en) 2012-11-08 2014-05-08 Cogenra Solar, Inc. High efficiency configuration for solar cell string
US9287431B2 (en) 2012-12-10 2016-03-15 Alliance For Sustainable Energy, Llc Superstrate sub-cell voltage-matched multijunction solar cells
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
WO2014110520A1 (en) 2013-01-11 2014-07-17 Silevo, Inc. Module fabrication of solar cells with low resistivity electrodes
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
WO2014117138A1 (en) 2013-01-28 2014-07-31 Global Solar Energy, Inc. Photovoltaic interconnect systems, devices, and methods
US10615297B2 (en) 2013-02-22 2020-04-07 International Business Machines Corporation Electrode formation for heterojunction solar cells
US9496448B2 (en) 2013-03-15 2016-11-15 Sandia Corporation Customized color patterning of photovoltaic cells
EP2787541B1 (en) 2013-04-03 2022-08-31 LG Electronics, Inc. Solar cell
US20140345674A1 (en) 2013-05-24 2014-11-27 Silevo, Inc. Moisture ingress resistant photovoltaic module
US20150096613A1 (en) 2013-06-24 2015-04-09 Sino-American Silicon Products Inc. Photovoltaic device and method of manufacturing the same
KR101622089B1 (ko) 2013-07-05 2016-05-18 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US9831369B2 (en) 2013-10-24 2017-11-28 National Technology & Engineering Solutions Of Sandia, Llc Photovoltaic power generation system with photovoltaic cells as bypass diodes
WO2015081077A1 (en) 2013-11-26 2015-06-04 Arizona Board Of Regents On Behalf Of Arizona State University Solar cells formed via aluminum electroplating
US20150179834A1 (en) 2013-12-20 2015-06-25 Mukul Agrawal Barrier-less metal seed stack and contact
US11811360B2 (en) 2014-03-28 2023-11-07 Maxeon Solar Pte. Ltd. High voltage solar modules
JP6350858B2 (ja) 2014-05-26 2018-07-04 パナソニックIpマネジメント株式会社 太陽電池の製造方法及び太陽電池
US20150349176A1 (en) 2014-05-27 2015-12-03 Cogenra Solar, Inc. High voltage solar panel
CN108091705B (zh) 2014-05-27 2019-07-02 太阳能公司 叠盖式太阳能电池模块
CN104282788B (zh) 2014-09-28 2017-03-22 苏州中来光伏新材股份有限公司 无主栅、高效率背接触太阳能电池模块、组件及制备工艺
US20160233352A1 (en) 2014-12-05 2016-08-11 Solarcity Corporation Photovoltaic electrode design with contact pads for cascaded application
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
CN104409402B (zh) 2014-12-30 2018-06-19 厦门市三安光电科技有限公司 用于led外延晶圆制程的石墨承载盘
US9806206B2 (en) 2015-04-28 2017-10-31 International Business Machines Corporation Optimized grid design for concentrator solar cell
US20160329443A1 (en) 2015-05-06 2016-11-10 Solarcity Corporation Solar cell with a low-resistivity transparent conductive oxide layer
US9711671B2 (en) 2015-09-18 2017-07-18 Alta Devices, Inc. Via structures for solar cell interconnection in solar module
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4336648A (en) * 1979-11-02 1982-06-29 Licentia Patent-Verwaltungs-G.M.B.H. Method of contacting a solar cell
CN1280393A (zh) * 1999-06-30 2001-01-17 佳能株式会社 太阳能电池组件
CN102148264A (zh) * 2010-12-30 2011-08-10 袁晓 一种具有金属丝电极的硅太阳电池及其制造方法
CN202736932U (zh) * 2012-04-16 2013-02-13 英利能源(中国)有限公司 N型太阳能电池组件及n型太阳能电池片

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