CN103558737A - 基板保持装置、具备其之曝光装置、方法 - Google Patents
基板保持装置、具备其之曝光装置、方法 Download PDFInfo
- Publication number
- CN103558737A CN103558737A CN201310481917.3A CN201310481917A CN103558737A CN 103558737 A CN103558737 A CN 103558737A CN 201310481917 A CN201310481917 A CN 201310481917A CN 103558737 A CN103558737 A CN 103558737A
- Authority
- CN
- China
- Prior art keywords
- substrate
- liquid
- maintaining part
- board member
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 541
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000007788 liquid Substances 0.000 claims abstract description 619
- 230000003287 optical effect Effects 0.000 claims abstract description 138
- 238000000034 method Methods 0.000 claims abstract description 46
- 238000011084 recovery Methods 0.000 claims description 91
- 230000009471 action Effects 0.000 claims description 37
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 3
- 238000007654 immersion Methods 0.000 abstract description 55
- 238000012423 maintenance Methods 0.000 abstract description 11
- 230000008901 benefit Effects 0.000 abstract description 2
- 238000004064 recycling Methods 0.000 abstract 4
- 239000000463 material Substances 0.000 description 198
- 238000010521 absorption reaction Methods 0.000 description 65
- 238000012545 processing Methods 0.000 description 32
- 238000005286 illumination Methods 0.000 description 30
- 230000015572 biosynthetic process Effects 0.000 description 29
- 230000007246 mechanism Effects 0.000 description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 21
- 230000008859 change Effects 0.000 description 17
- 230000008569 process Effects 0.000 description 17
- 230000002093 peripheral effect Effects 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 13
- 238000000576 coating method Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 13
- 238000005259 measurement Methods 0.000 description 12
- 239000010453 quartz Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 238000001514 detection method Methods 0.000 description 10
- 150000002221 fluorine Chemical class 0.000 description 10
- 230000008595 infiltration Effects 0.000 description 10
- 238000001764 infiltration Methods 0.000 description 10
- 230000008520 organization Effects 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 230000010287 polarization Effects 0.000 description 9
- 101150108487 pst2 gene Proteins 0.000 description 9
- 102100021786 CMP-N-acetylneuraminate-poly-alpha-2,8-sialyltransferase Human genes 0.000 description 8
- 101000616698 Homo sapiens CMP-N-acetylneuraminate-poly-alpha-2,8-sialyltransferase Proteins 0.000 description 8
- 238000002309 gasification Methods 0.000 description 8
- 239000004033 plastic Substances 0.000 description 8
- 229920003023 plastic Polymers 0.000 description 8
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 8
- 239000004810 polytetrafluoroethylene Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000002940 repellent Effects 0.000 description 6
- 239000005871 repellent Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid group Chemical group C(CCCCCCC\C=C/CCCCCCCC)(=O)O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000000007 visual effect Effects 0.000 description 4
- 101000891579 Homo sapiens Microtubule-associated protein tau Proteins 0.000 description 3
- 102100040243 Microtubule-associated protein tau Human genes 0.000 description 3
- 229910052771 Terbium Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 210000003128 head Anatomy 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- OQCFWECOQNPQCG-UHFFFAOYSA-N 1,3,4,8-tetrahydropyrimido[4,5-c]oxazin-7-one Chemical compound C1CONC2=C1C=NC(=O)N2 OQCFWECOQNPQCG-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 206010067482 No adverse event Diseases 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QLACRIKFZRFWRU-UHFFFAOYSA-N [4-oxo-4-(4-oxobutan-2-yloxy)butan-2-yl] 3-hydroxybutanoate Chemical compound CC(O)CC(=O)OC(C)CC(=O)OC(C)CC=O QLACRIKFZRFWRU-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005111 flow chemistry technique Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229940058401 polytetrafluoroethylene Drugs 0.000 description 2
- 210000001747 pupil Anatomy 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 230000004304 visual acuity Effects 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000010627 cedar oil Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 210000000887 face Anatomy 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical class 0.000 description 1
- 239000010702 perfluoropolyether Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
- 238000003809 water extraction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004-171116 | 2004-06-09 | ||
| JP2004171116 | 2004-06-09 | ||
| JP2004-205008 | 2004-07-12 | ||
| JP2004205008 | 2004-07-12 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005800189332A Division CN1965389B (zh) | 2004-06-09 | 2005-06-08 | 基板保持装置、具备其之曝光装置及方法、元件制造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103558737A true CN103558737A (zh) | 2014-02-05 |
Family
ID=35503355
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310481917.3A Pending CN103558737A (zh) | 2004-06-09 | 2005-06-08 | 基板保持装置、具备其之曝光装置、方法 |
| CN2005800189332A Expired - Fee Related CN1965389B (zh) | 2004-06-09 | 2005-06-08 | 基板保持装置、具备其之曝光装置及方法、元件制造方法 |
| CN201110167496.8A Expired - Fee Related CN102290365B (zh) | 2004-06-09 | 2005-06-08 | 基板保持装置、具备其之曝光装置及方法、元件制造方法 |
| CN201110167423.9A Expired - Fee Related CN102290364B (zh) | 2004-06-09 | 2005-06-08 | 基板保持装置、具备其之曝光装置、元件制造方法 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005800189332A Expired - Fee Related CN1965389B (zh) | 2004-06-09 | 2005-06-08 | 基板保持装置、具备其之曝光装置及方法、元件制造方法 |
| CN201110167496.8A Expired - Fee Related CN102290365B (zh) | 2004-06-09 | 2005-06-08 | 基板保持装置、具备其之曝光装置及方法、元件制造方法 |
| CN201110167423.9A Expired - Fee Related CN102290364B (zh) | 2004-06-09 | 2005-06-08 | 基板保持装置、具备其之曝光装置、元件制造方法 |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US8705008B2 (cg-RX-API-DMAC7.html) |
| EP (3) | EP1788617B1 (cg-RX-API-DMAC7.html) |
| JP (8) | JP5170228B2 (cg-RX-API-DMAC7.html) |
| KR (7) | KR20160137690A (cg-RX-API-DMAC7.html) |
| CN (4) | CN103558737A (cg-RX-API-DMAC7.html) |
| HK (1) | HK1249935A1 (cg-RX-API-DMAC7.html) |
| IL (2) | IL179937A (cg-RX-API-DMAC7.html) |
| SG (3) | SG10201710046XA (cg-RX-API-DMAC7.html) |
| TW (2) | TWI574300B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2005122219A1 (cg-RX-API-DMAC7.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105467779A (zh) * | 2016-01-04 | 2016-04-06 | 京东方科技集团股份有限公司 | 一种曝光机及曝光方法 |
| TWI838138B (zh) * | 2023-02-24 | 2024-04-01 | 南茂科技股份有限公司 | 清潔裝置 |
Families Citing this family (95)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| TWI232357B (en) | 2002-11-12 | 2005-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| JP3953460B2 (ja) | 2002-11-12 | 2007-08-08 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ投影装置 |
| US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4415939B2 (ja) * | 2003-06-13 | 2010-02-17 | 株式会社ニコン | 露光方法、基板ステージ、露光装置、及びデバイス製造方法 |
| CN102163005B (zh) | 2003-12-03 | 2014-05-21 | 株式会社尼康 | 投影曝光装置、器件制造方法以及光学部件 |
| SG10201710046XA (en) * | 2004-06-09 | 2018-01-30 | Nippon Kogaku Kk | Substrate holding device, exposure apparatus having same, exposure method, method for producing device, and liquid repellent plate |
| US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20080318152A1 (en) * | 2004-09-17 | 2008-12-25 | Takeyuki Mizutani | Substrate for Exposure, Exposure Method and Device Manufacturing Method |
| SG188899A1 (en) * | 2004-09-17 | 2013-04-30 | Nikon Corp | Substrate holding device, exposure apparatus, and device manufacturing method |
| KR101771334B1 (ko) * | 2004-12-15 | 2017-08-24 | 가부시키가이샤 니콘 | 기판 유지 장치, 노광 장치 및 디바이스 제조방법 |
| US7433016B2 (en) | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4708876B2 (ja) * | 2005-06-21 | 2011-06-22 | キヤノン株式会社 | 液浸露光装置 |
| EP2768016B1 (en) * | 2005-12-08 | 2017-10-25 | Nikon Corporation | Exposure apparatus and method |
| US7649611B2 (en) * | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2007083592A1 (ja) * | 2006-01-17 | 2007-07-26 | Nikon Corporation | 基板保持装置及び露光装置、並びにデバイス製造方法 |
| WO2007139017A1 (ja) * | 2006-05-29 | 2007-12-06 | Nikon Corporation | 液体回収部材、基板保持部材、露光装置、及びデバイス製造方法 |
| US8253922B2 (en) | 2006-11-03 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography system using a sealed wafer bath |
| US8208116B2 (en) * | 2006-11-03 | 2012-06-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography system using a sealed wafer bath |
| US8040490B2 (en) * | 2006-12-01 | 2011-10-18 | Nikon Corporation | Liquid immersion exposure apparatus, exposure method, and method for producing device |
| JP2008192854A (ja) * | 2007-02-05 | 2008-08-21 | Canon Inc | 液浸露光装置 |
| US20080198346A1 (en) * | 2007-02-16 | 2008-08-21 | Canon Kabushiki Kaisha | Exposure apparatus and method for manufacturing device |
| US20080304025A1 (en) * | 2007-06-08 | 2008-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for immersion lithography |
| TWI514090B (zh) * | 2007-07-13 | 2015-12-21 | Mapper Lithography Ip Bv | 微影系統及用於支撐晶圓的晶圓台 |
| US8705010B2 (en) | 2007-07-13 | 2014-04-22 | Mapper Lithography Ip B.V. | Lithography system, method of clamping and wafer table |
| NL1036526A1 (nl) * | 2008-02-14 | 2009-08-17 | Asml Netherlands Bv | Use of a coating, an article having the coating and a lithographic apparatus comprising the coating. |
| US20100039628A1 (en) * | 2008-03-19 | 2010-02-18 | Nikon Corporation | Cleaning tool, cleaning method, and device fabricating method |
| US9176393B2 (en) | 2008-05-28 | 2015-11-03 | Asml Netherlands B.V. | Lithographic apparatus and a method of operating the apparatus |
| EP2131242A1 (en) * | 2008-06-02 | 2009-12-09 | ASML Netherlands B.V. | Substrate table, lithographic apparatus and device manufacturing method |
| US20100045949A1 (en) * | 2008-08-11 | 2010-02-25 | Nikon Corporation | Exposure apparatus, maintaining method and device fabricating method |
| WO2010050240A1 (ja) * | 2008-10-31 | 2010-05-06 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| US8896806B2 (en) * | 2008-12-29 | 2014-11-25 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| US20100196832A1 (en) * | 2009-01-30 | 2010-08-05 | Nikon Corporation | Exposure apparatus, exposing method, liquid immersion member and device fabricating method |
| KR101712219B1 (ko) | 2009-03-10 | 2017-03-03 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법, 및 디바이스 제조 방법 |
| NL2004305A (en) * | 2009-03-13 | 2010-09-14 | Asml Netherlands Bv | Substrate table, immersion lithographic apparatus and device manufacturing method. |
| US8953143B2 (en) * | 2009-04-24 | 2015-02-10 | Nikon Corporation | Liquid immersion member |
| US20100323303A1 (en) * | 2009-05-15 | 2010-12-23 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, and device fabricating method |
| US20110199591A1 (en) * | 2009-10-14 | 2011-08-18 | Nikon Corporation | Exposure apparatus, exposing method, maintenance method and device fabricating method |
| KR20120101437A (ko) | 2009-11-09 | 2012-09-13 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법, 노광 장치의 메인터넌스 방법, 노광 장치의 조정 방법, 및 디바이스 제조 방법 |
| US9223225B2 (en) | 2010-01-08 | 2015-12-29 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposure method, and device manufacturing method |
| US20110222031A1 (en) * | 2010-03-12 | 2011-09-15 | Nikon Corporation | Liquid immersion member, exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
| US20120013863A1 (en) | 2010-07-14 | 2012-01-19 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
| US20120013864A1 (en) | 2010-07-14 | 2012-01-19 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
| US8937703B2 (en) | 2010-07-14 | 2015-01-20 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
| US20120012191A1 (en) | 2010-07-16 | 2012-01-19 | Nikon Corporation | Liquid recovery apparatus, exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
| US20120019802A1 (en) | 2010-07-23 | 2012-01-26 | Nikon Corporation | Cleaning method, immersion exposure apparatus, device fabricating method, program, and storage medium |
| US20120019804A1 (en) | 2010-07-23 | 2012-01-26 | Nikon Corporation | Cleaning method, cleaning apparatus, device fabricating method, program, and storage medium |
| US20120019803A1 (en) | 2010-07-23 | 2012-01-26 | Nikon Corporation | Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program, and storage medium |
| NL2007802A (en) | 2010-12-21 | 2012-06-25 | Asml Netherlands Bv | A substrate table, a lithographic apparatus and a device manufacturing method. |
| US20120162619A1 (en) | 2010-12-27 | 2012-06-28 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, exposing method, device fabricating method, program, and storage medium |
| US20120188521A1 (en) | 2010-12-27 | 2012-07-26 | Nikon Corporation | Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program and storage medium |
| US20130016329A1 (en) | 2011-07-12 | 2013-01-17 | Nikon Corporation | Exposure apparatus, exposure method, measurement method, and device manufacturing method |
| US9329496B2 (en) | 2011-07-21 | 2016-05-03 | Nikon Corporation | Exposure apparatus, exposure method, method of manufacturing device, program, and storage medium |
| US9256137B2 (en) | 2011-08-25 | 2016-02-09 | Nikon Corporation | Exposure apparatus, liquid holding method, and device manufacturing method |
| US20130050666A1 (en) | 2011-08-26 | 2013-02-28 | Nikon Corporation | Exposure apparatus, liquid holding method, and device manufacturing method |
| JP2013102126A (ja) * | 2011-10-14 | 2013-05-23 | Fuji Electric Co Ltd | 半導体装置の製造方法および半導体装置の製造装置 |
| US20130135594A1 (en) | 2011-11-25 | 2013-05-30 | Nikon Corporation | Liquid immersion member, immersion exposure apparatus, exposure method, device manufacturing method, program, and recording medium |
| US9268231B2 (en) | 2012-04-10 | 2016-02-23 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
| US9323160B2 (en) | 2012-04-10 | 2016-04-26 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium |
| CN104541206B (zh) | 2012-05-29 | 2016-12-21 | Asml荷兰有限公司 | 物体保持器和光刻设备 |
| US9823580B2 (en) | 2012-07-20 | 2017-11-21 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
| JP2014045090A (ja) * | 2012-08-27 | 2014-03-13 | Toshiba Corp | 液浸露光装置 |
| US9494870B2 (en) | 2012-10-12 | 2016-11-15 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
| US9568828B2 (en) | 2012-10-12 | 2017-02-14 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
| US9651873B2 (en) | 2012-12-27 | 2017-05-16 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
| JP6119242B2 (ja) | 2012-12-27 | 2017-04-26 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| US9720331B2 (en) | 2012-12-27 | 2017-08-01 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
| CN103172271B (zh) * | 2013-03-15 | 2015-11-25 | 京东方科技集团股份有限公司 | 一种涂布方法 |
| CN103676263B (zh) * | 2013-06-06 | 2016-05-25 | 凌晖科技股份有限公司 | 液晶面板的重制方法 |
| CN104425403B (zh) * | 2013-09-02 | 2017-12-12 | 日月光半导体制造股份有限公司 | 半导体封装件、其制造方法及其使用的切割冶具 |
| KR101898355B1 (ko) | 2013-09-25 | 2018-09-12 | 시바우라 메카트로닉스 가부시끼가이샤 | 흡착 스테이지, 접합 장치 및 접합 기판의 제조 방법 |
| EP3057122B1 (en) | 2013-10-08 | 2018-11-21 | Nikon Corporation | Immersion member, exposure apparatus, exposure method, and device manufacturing method |
| US9760027B2 (en) * | 2013-10-17 | 2017-09-12 | United Microelectronics Corp. | Scanner routing method for particle removal |
| CN105374709B (zh) * | 2014-08-07 | 2019-05-03 | 东京毅力科创株式会社 | 接合装置、接合系统以及接合方法 |
| WO2016188569A1 (en) * | 2015-05-26 | 2016-12-01 | Rasco Gmbh | A boat, assembly & method for handling electronic components |
| KR20170016547A (ko) | 2015-08-03 | 2017-02-14 | 삼성전자주식회사 | 척 테이블 및 그를 포함하는 기판 제조 장치 |
| CN105093588B (zh) * | 2015-08-24 | 2018-05-08 | 京东方科技集团股份有限公司 | 一种支撑销及吸附机台 |
| JP6639175B2 (ja) * | 2015-09-29 | 2020-02-05 | 東京エレクトロン株式会社 | 乾燥装置及び乾燥処理方法 |
| US10705426B2 (en) | 2016-05-12 | 2020-07-07 | Asml Netherlands B.V. | Extraction body for lithographic apparatus |
| JP6758920B2 (ja) * | 2016-06-01 | 2020-09-23 | キヤノン株式会社 | チャック、基板保持装置、パターン形成装置、及び物品の製造方法 |
| JP6207671B1 (ja) * | 2016-06-01 | 2017-10-04 | キヤノン株式会社 | パターン形成装置、基板配置方法及び物品の製造方法 |
| KR102355867B1 (ko) * | 2017-06-06 | 2022-01-26 | 에이에스엠엘 네델란즈 비.브이. | 지지 테이블로부터 대상물을 언로딩하는 방법 |
| CN107272351A (zh) * | 2017-07-28 | 2017-10-20 | 武汉华星光电技术有限公司 | 承载装置及具有该承载装置的曝光设备 |
| WO2019072504A1 (en) | 2017-10-12 | 2019-04-18 | Asml Netherlands B.V. | SUBSTRATE CARRIER FOR USE IN A LITHOGRAPHIC APPARATUS |
| EP3756215B1 (en) | 2018-02-20 | 2024-08-07 | Applied Materials, Inc. | Method using a patterned vacuum chuck for double-sided processing |
| JP7198629B2 (ja) * | 2018-10-26 | 2023-01-04 | 日本特殊陶業株式会社 | 保持装置 |
| JP7154995B2 (ja) * | 2018-12-17 | 2022-10-18 | 株式会社Screenホールディングス | 基板処理装置 |
| EP3899666A1 (en) * | 2018-12-21 | 2021-10-27 | ASML Holding N.V. | Reticle sub-field thermal control |
| JP7463032B2 (ja) * | 2020-05-22 | 2024-04-08 | 株式会社ディスコ | 被加工物の保持機構及び加工装置 |
| JP2022068575A (ja) * | 2020-10-22 | 2022-05-10 | 株式会社ディスコ | 洗浄装置 |
| US11728204B2 (en) * | 2020-10-23 | 2023-08-15 | Kla Corporation | High flow vacuum chuck |
| US20240023448A1 (en) * | 2021-05-28 | 2024-01-18 | Beijing Boe Technology Development Co., Ltd. | Piezoelectric sensor, fabrication method therefor, and haptic feedback device |
| JP2023044244A (ja) * | 2021-09-17 | 2023-03-30 | キオクシア株式会社 | 半導体製造装置 |
| CN113727595B (zh) * | 2021-11-01 | 2022-02-15 | 广东科视光学技术股份有限公司 | 一种pcb板自动化曝光设备及方法 |
| WO2024260656A1 (en) * | 2023-06-19 | 2024-12-26 | Asml Netherlands B.V. | Substrate support |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001044097A (ja) * | 1999-07-26 | 2001-02-16 | Matsushita Electric Ind Co Ltd | 露光装置 |
| JP2003017401A (ja) * | 2001-07-05 | 2003-01-17 | Tokyo Electron Ltd | 液処理装置および液処理方法 |
| JP2004119497A (ja) * | 2002-09-24 | 2004-04-15 | Huabang Electronic Co Ltd | 半導体製造設備と方法 |
| JP2004128102A (ja) * | 2002-10-01 | 2004-04-22 | Tokyo Electron Ltd | 液処理装置における気液分離回収装置 |
| CN1501175A (zh) * | 2002-11-12 | 2004-06-02 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
Family Cites Families (97)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
| JPS57117238A (en) | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
| JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
| JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
| JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
| NL8204450A (nl) | 1982-11-17 | 1984-06-18 | Philips Nv | Verplaatsingsinrichting, in het bijzonder voor het stralingslithografisch behandelen van een substraat. |
| DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
| DE3340079A1 (de) * | 1983-11-05 | 1985-05-15 | Brown, Boveri & Cie Ag, 6800 Mannheim | Speicherzellenverbindung |
| DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
| JPS6144429A (ja) | 1984-08-09 | 1986-03-04 | Nippon Kogaku Kk <Nikon> | 位置合わせ方法、及び位置合せ装置 |
| JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
| JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
| JP2587953B2 (ja) * | 1987-09-30 | 1997-03-05 | 日立電子エンジニアリング株式会社 | レジスト塗布装置 |
| JPH01303720A (ja) * | 1988-06-01 | 1989-12-07 | Toshiba Corp | チャッキング装置 |
| JP2897355B2 (ja) | 1990-07-05 | 1999-05-31 | 株式会社ニコン | アライメント方法,露光装置,並びに位置検出方法及び装置 |
| JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
| JP3203719B2 (ja) * | 1991-12-26 | 2001-08-27 | 株式会社ニコン | 露光装置、その露光装置により製造されるデバイス、露光方法、およびその露光方法を用いたデバイス製造方法 |
| JP3246615B2 (ja) | 1992-07-27 | 2002-01-15 | 株式会社ニコン | 照明光学装置、露光装置、及び露光方法 |
| JPH06188169A (ja) | 1992-08-24 | 1994-07-08 | Canon Inc | 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法 |
| JP3173928B2 (ja) * | 1992-09-25 | 2001-06-04 | キヤノン株式会社 | 基板保持装置、基板保持方法および露光装置 |
| JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
| JP2753930B2 (ja) | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
| JP3412704B2 (ja) | 1993-02-26 | 2003-06-03 | 株式会社ニコン | 投影露光方法及び装置、並びに露光装置 |
| JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
| US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
| US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
| JP3555230B2 (ja) | 1994-05-18 | 2004-08-18 | 株式会社ニコン | 投影露光装置 |
| US5623853A (en) | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
| JP3940823B2 (ja) | 1994-12-26 | 2007-07-04 | 株式会社ニコン | ステージ装置及びその制御方法 |
| JPH09306802A (ja) * | 1996-05-10 | 1997-11-28 | Nikon Corp | 投影露光装置 |
| JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| JPH08316124A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
| JP3709896B2 (ja) | 1995-06-15 | 2005-10-26 | 株式会社ニコン | ステージ装置 |
| JP3709904B2 (ja) | 1996-11-14 | 2005-10-26 | 株式会社ニコン | 投影露光装置 |
| KR970072024A (ko) | 1996-04-09 | 1997-11-07 | 오노 시게오 | 투영노광장치 |
| US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
| JPH10135115A (ja) | 1996-11-01 | 1998-05-22 | Nikon Corp | 露光方法及び基準プレート |
| JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
| IL130137A (en) | 1996-11-28 | 2003-07-06 | Nikon Corp | Exposure apparatus and an exposure method |
| JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
| KR100512450B1 (ko) | 1996-12-24 | 2006-01-27 | 에이에스엠엘 네델란즈 비.브이. | 두개의물체홀더를가진이차원적으로안정화된위치설정장치와이런위치설정장치를구비한리소그래픽장치 |
| JP3276601B2 (ja) * | 1997-01-22 | 2002-04-22 | 東京エレクトロン株式会社 | 洗浄処理方法及び洗浄処理装置 |
| JP3747566B2 (ja) * | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
| JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
| JPH1116816A (ja) | 1997-06-25 | 1999-01-22 | Nikon Corp | 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法 |
| TW444270B (en) * | 1997-11-12 | 2001-07-01 | Nippon Kogaku Kk | Exposure apparatus, apparatus for fabricating device and fabricating method of exposure apparatus |
| JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
| US6897963B1 (en) | 1997-12-18 | 2005-05-24 | Nikon Corporation | Stage device and exposure apparatus |
| US6208407B1 (en) | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
| WO1999049504A1 (fr) * | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
| JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
| WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
| JP2001183844A (ja) * | 1999-12-22 | 2001-07-06 | Sharp Corp | 露光方法 |
| JP4700819B2 (ja) * | 2000-03-10 | 2011-06-15 | キヤノン株式会社 | 基板保持装置、半導体製造装置および半導体デバイス製造方法 |
| DE10011130A1 (de) | 2000-03-10 | 2001-09-13 | Mannesmann Vdo Ag | Entlüftungseinrichtung für einen Kraftstoffbehälter |
| JP2001332609A (ja) | 2000-03-13 | 2001-11-30 | Nikon Corp | 基板保持装置及び露光装置 |
| US20020041377A1 (en) | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
| JP2002014005A (ja) | 2000-04-25 | 2002-01-18 | Nikon Corp | 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置 |
| JP2001319865A (ja) | 2000-05-11 | 2001-11-16 | Canon Inc | 基板ステージ装置、露光装置および半導体デバイス製造方法 |
| JP2002231622A (ja) | 2000-11-29 | 2002-08-16 | Nikon Corp | ステージ装置及び露光装置 |
| JP2002200453A (ja) * | 2000-12-28 | 2002-07-16 | Matsushita Electric Ind Co Ltd | 塗布装置および塗布方法 |
| US6513796B2 (en) * | 2001-02-23 | 2003-02-04 | International Business Machines Corporation | Wafer chuck having a removable insert |
| TW529172B (en) | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
| US6801301B2 (en) * | 2001-10-12 | 2004-10-05 | Canon Kabushiki Kaisha | Exposure apparatus |
| WO2003052804A1 (en) * | 2001-12-17 | 2003-06-26 | Nikon Corporation | Substrate holding apparatus, exposure apparatus, and device manufacturing method |
| JP4288694B2 (ja) | 2001-12-20 | 2009-07-01 | 株式会社ニコン | 基板保持装置、露光装置及びデバイス製造方法 |
| JP3979464B2 (ja) * | 2001-12-27 | 2007-09-19 | 株式会社荏原製作所 | 無電解めっき前処理装置及び方法 |
| JP4205054B2 (ja) * | 2002-04-24 | 2009-01-07 | 株式会社ニコン | 露光システム及びデバイス製造方法 |
| WO2004008499A1 (en) * | 2002-07-17 | 2004-01-22 | Matsushita Electric Industrial Co. Ltd. | Method and apparatus for picking up semiconductor chip and suction and exfoliation tool up therefor |
| TWI307526B (en) * | 2002-08-06 | 2009-03-11 | Nikon Corp | Supporting device and the mamufacturing method thereof, stage device and exposure device |
| WO2004019128A2 (en) | 2002-08-23 | 2004-03-04 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
| JP4040423B2 (ja) | 2002-10-16 | 2008-01-30 | キヤノン株式会社 | 基板保持装置 |
| DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
| EP1429188B1 (en) * | 2002-11-12 | 2013-06-19 | ASML Netherlands B.V. | Lithographic projection apparatus |
| EP1420299B1 (en) * | 2002-11-12 | 2011-01-05 | ASML Netherlands B.V. | Immersion lithographic apparatus and device manufacturing method |
| CN101382738B (zh) | 2002-11-12 | 2011-01-12 | Asml荷兰有限公司 | 光刻投射装置 |
| EP1420298B1 (en) | 2002-11-12 | 2013-02-20 | ASML Netherlands B.V. | Lithographic apparatus |
| CN101424883B (zh) | 2002-12-10 | 2013-05-15 | 株式会社尼康 | 曝光设备和器件制造法 |
| SG158745A1 (en) | 2002-12-10 | 2010-02-26 | Nikon Corp | Exposure apparatus and method for producing device |
| EP2618213B1 (en) | 2003-04-11 | 2016-03-09 | Nikon Corporation | Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine |
| EP1486828B1 (en) | 2003-06-09 | 2013-10-09 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4415939B2 (ja) | 2003-06-13 | 2010-02-17 | 株式会社ニコン | 露光方法、基板ステージ、露光装置、及びデバイス製造方法 |
| JP3862678B2 (ja) * | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| WO2005010611A2 (en) | 2003-07-08 | 2005-02-03 | Nikon Corporation | Wafer table for immersion lithography |
| KR101380989B1 (ko) | 2003-08-29 | 2014-04-04 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| JP4378136B2 (ja) * | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| EP1679737A4 (en) * | 2003-10-31 | 2008-01-30 | Nikon Corp | EXPOSURE APPARATUS AND DEVICE PRODUCTION METHOD |
| CN102163005B (zh) | 2003-12-03 | 2014-05-21 | 株式会社尼康 | 投影曝光装置、器件制造方法以及光学部件 |
| WO2005057636A1 (ja) | 2003-12-15 | 2005-06-23 | Nikon Corporation | ステージ装置、露光装置、及び露光方法 |
| WO2005067013A1 (ja) * | 2004-01-05 | 2005-07-21 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
| KR101377815B1 (ko) * | 2004-02-03 | 2014-03-26 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| EP1724815B1 (en) * | 2004-02-10 | 2012-06-13 | Nikon Corporation | Aligner, device manufacturing method, maintenance method and aligning method |
| SG10201710046XA (en) * | 2004-06-09 | 2018-01-30 | Nippon Kogaku Kk | Substrate holding device, exposure apparatus having same, exposure method, method for producing device, and liquid repellent plate |
| SG188899A1 (en) * | 2004-09-17 | 2013-04-30 | Nikon Corp | Substrate holding device, exposure apparatus, and device manufacturing method |
-
2005
- 2005-06-08 SG SG10201710046XA patent/SG10201710046XA/en unknown
- 2005-06-08 CN CN201310481917.3A patent/CN103558737A/zh active Pending
- 2005-06-08 SG SG2012089082A patent/SG186621A1/en unknown
- 2005-06-08 KR KR1020167032818A patent/KR20160137690A/ko not_active Abandoned
- 2005-06-08 WO PCT/JP2005/010458 patent/WO2005122219A1/ja not_active Ceased
- 2005-06-08 KR KR1020197000596A patent/KR20190006080A/ko not_active Ceased
- 2005-06-08 KR KR1020127030679A patent/KR101421870B1/ko not_active Expired - Fee Related
- 2005-06-08 US US11/629,070 patent/US8705008B2/en not_active Expired - Fee Related
- 2005-06-08 KR KR1020147032469A patent/KR101681101B1/ko not_active Expired - Fee Related
- 2005-06-08 KR KR1020137000176A patent/KR101511876B1/ko not_active Expired - Fee Related
- 2005-06-08 EP EP05748927.0A patent/EP1788617B1/en not_active Expired - Lifetime
- 2005-06-08 EP EP13162896.8A patent/EP2637061B1/en not_active Expired - Lifetime
- 2005-06-08 KR KR1020067026606A patent/KR101227290B1/ko not_active Expired - Fee Related
- 2005-06-08 EP EP17202731.0A patent/EP3318928A1/en not_active Withdrawn
- 2005-06-08 SG SG200903927-2A patent/SG153813A1/en unknown
- 2005-06-08 CN CN2005800189332A patent/CN1965389B/zh not_active Expired - Fee Related
- 2005-06-08 KR KR1020127002569A patent/KR101323967B1/ko not_active Expired - Fee Related
- 2005-06-08 CN CN201110167496.8A patent/CN102290365B/zh not_active Expired - Fee Related
- 2005-06-08 CN CN201110167423.9A patent/CN102290364B/zh not_active Expired - Fee Related
- 2005-06-09 TW TW102120665A patent/TWI574300B/zh not_active IP Right Cessation
- 2005-06-09 TW TW094118986A patent/TWI447780B/zh not_active IP Right Cessation
-
2006
- 2006-12-10 IL IL179937A patent/IL179937A/en active IP Right Grant
-
2010
- 2010-12-13 JP JP2010277195A patent/JP5170228B2/ja not_active Expired - Fee Related
-
2012
- 2012-03-30 JP JP2012082567A patent/JP5565430B2/ja not_active Expired - Fee Related
-
2013
- 2013-10-06 IL IL228755A patent/IL228755A/en active IP Right Grant
- 2013-12-24 JP JP2013266038A patent/JP5733382B2/ja not_active Expired - Fee Related
-
2014
- 2014-03-27 US US14/227,310 patent/US20140226144A1/en not_active Abandoned
- 2014-11-25 JP JP2014237628A patent/JP5920447B2/ja not_active Expired - Lifetime
-
2015
- 2015-10-09 JP JP2015201563A patent/JP6115610B2/ja not_active Expired - Lifetime
-
2016
- 2016-10-13 JP JP2016202145A patent/JP6319394B2/ja not_active Expired - Lifetime
-
2017
- 2017-10-20 JP JP2017203047A patent/JP2018018099A/ja active Pending
-
2018
- 2018-07-18 HK HK18109322.0A patent/HK1249935A1/en unknown
- 2018-11-29 JP JP2018223986A patent/JP2019040214A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001044097A (ja) * | 1999-07-26 | 2001-02-16 | Matsushita Electric Ind Co Ltd | 露光装置 |
| JP2003017401A (ja) * | 2001-07-05 | 2003-01-17 | Tokyo Electron Ltd | 液処理装置および液処理方法 |
| JP2004119497A (ja) * | 2002-09-24 | 2004-04-15 | Huabang Electronic Co Ltd | 半導体製造設備と方法 |
| JP2004128102A (ja) * | 2002-10-01 | 2004-04-22 | Tokyo Electron Ltd | 液処理装置における気液分離回収装置 |
| CN1501175A (zh) * | 2002-11-12 | 2004-06-02 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105467779A (zh) * | 2016-01-04 | 2016-04-06 | 京东方科技集团股份有限公司 | 一种曝光机及曝光方法 |
| TWI838138B (zh) * | 2023-02-24 | 2024-04-01 | 南茂科技股份有限公司 | 清潔裝置 |
Also Published As
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102290364B (zh) | 基板保持装置、具备其之曝光装置、元件制造方法 | |
| CN102163004B (zh) | 曝光装置、曝光方法和器件制造方法 | |
| CN103149803A (zh) | 曝光装置、及元件制造方法 | |
| TW201530616A (zh) | 曝光方法及曝光裝置以及元件製造方法 | |
| CN101799636A (zh) | 曝光装置、曝光方法及组件制造方法 | |
| CN100533661C (zh) | 曝光条件的决定方法、曝光方法及装置、组件制造方法 | |
| CN101685269A (zh) | 曝光装置及元件制造方法 | |
| JP4826146B2 (ja) | 露光装置、デバイス製造方法 | |
| HK1164543B (en) | Substrate holding device, exposure apparatus having the same, device manufacturing method | |
| HK1164542B (en) | Substrate holding device, exposure apparatus having the same, device manufacturing method | |
| HK1189279A (en) | Substrate holding device, exposure apparatus having the same and methods |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1189279 Country of ref document: HK |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140205 |
|
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1189279 Country of ref document: HK |