CN103329251A - 使用电容耦合式等离子体的半导体处理系统及方法 - Google Patents

使用电容耦合式等离子体的半导体处理系统及方法 Download PDF

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CN103329251A
CN103329251A CN2011800659032A CN201180065903A CN103329251A CN 103329251 A CN103329251 A CN 103329251A CN 2011800659032 A CN2011800659032 A CN 2011800659032A CN 201180065903 A CN201180065903 A CN 201180065903A CN 103329251 A CN103329251 A CN 103329251A
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J-G·杨
M·L·米勒
X·陈
祝基恩
Q·梁
S·文卡特拉马
D·卢博米尔斯基
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Abstract

本发明所描述的基板处理系统具有定位于处理腔室内部的电容耦合式等离子体(CCP)单元。CCP单元可包括在第一电极与第二电极之间形成的等离子体激发区域。第一电极可包括多个第一开孔以准许第一气体进入等离子体激发区域，且第二电极可包括多个第二开孔以准许活性气体离开等离子体激发区域。系统可进一步包括气体入口及基座，气体入口用于供应第一气体至CCP单元的第一电极，基座可操作以支撑基板。基座定位在气体反应区域下方，活化气体从CCP单元前进进入气体反应区域。

Description

使用电容耦合式等离子体的半导体处理系统及方法
相关申请案的交叉引用
本申请案是2011年10月3日提出申请的标题名称为“SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USINGCAPACITIVELY COUPLED PLASMA（使用电容耦合式等离子体的半导体处理系统及方法）”的美国专利申请No.13/251,663的PCT申请，并且与2011年1月18日提出申请的标题名称为“SEMICONDUCTOR PROCESSINGSYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA（使用电容耦合式等离子体的半导体处理系统及方法）”的美国临时专利申请案第61/433,633号相关且主张所述临时专利申请案的权益，所述专利申请案和临时专利申请案二者的全部揭示内容出于所有目的通过引用的方式并入本文。
发明背景
用于制造半导体集成电路的等离子体沉积及蚀刻工艺已广泛使用数十年。这些工艺通常包含从产生等离子体的气体中形成等离子体，产生等离子体的气体暴露于处理腔室内部的功率充足的电场中以使得气体离子化。使这些气体形成为等离子体所需的温度可远低于以热方式离子化相同气体所需的温度。因此，等离子体产生工艺可用来在显著低于可能藉由简单加热气体进行的腔室处理温度下从启动气体产生反应性自由基及离子物种。这允许等离子体从基板表面沉积和/或蚀刻材料而无需将基板温度上升至阈值之上，将基板温度上升至阈值之上将熔融、分解或者以其他方式损坏基板上的材料。
示例性等离子体沉积工艺包括在基板晶圆的暴露表面上的诸如氧化硅之类的介电性材料的等离子体辅助化学气相沉积(PECVD)。常规PECVD包含混合处理腔室内的气体和/或沉积前驱物，及从气体触发等离子体以产生在基板上反应且沉积材料的反应物种。等离子体通常接近于基板的暴露表面定位以促进反应产物的有效沉积。
类似地，等离子体蚀刻工艺包括将基板的经选择部分暴露至等离子体活化的蚀刻物种，活化的蚀刻物种在化学上发生反应和/或在物理上溅射基板的材料。等离子体蚀刻的材料的移除速率、选择性及方向可利用对蚀刻剂气体、等离子体激发能及在基板与带电等离子体物种之间的电偏置以及其他参数的调整来进行控制。一些等离子体技术，诸如高密度等离子体化学气相沉积(HDP–CVD)依靠同步的等离子体蚀刻及沉积以产生基板上的特征结构。
尽管通常等离子体环境对基板的破坏少于高温沉积环境，但是等离子体环境仍产生制造挑战。由于高能等离子体过蚀刻浅沟及间隙，所以蚀刻精度可能成为问题。等离子体中的高能物种，尤其离子化物种可在经沉积材料中产生不希望有的反应，不希望有的反应不利地影响材料的性能。因此，需要在制造期间对接触基板晶圆的等离子体部件提供更精确控制的系统及方法。
发明内容
描述了用于在等离子体与暴露于等离子体和/或等离子体的流出物的基板晶圆表面之间的环境的改良控制的系统及方法。改良控制可藉由定位在等离子体与基板之间的离子抑制元件至少部分地实现，离子抑制元件减少或消除到达基板的离子带电物种的数目。在基板上的等离子体辅助蚀刻和/或沉积期间，调整到达基板表面的离子物种的浓度允许对蚀刻速度、蚀刻选择性及沉积化学性质（以及其他参数）的更精确控制。
在一些实例中，离子抑制元件可为基板处理腔室的气体/前驱物输送设备的部分。举例而言，定位在等离子体区域与基板的间的腔室内部的喷淋头可既作为气体及前驱物的分配部件又作为离子抑制器，离子抑制器减少从等离子体区域穿过喷淋头前进至基板的离子化物种的数量。在额外实例中，离子抑制元件可为在等离子体区域与基板之间的具有一个或更多开孔的隔板，等离子体流出物可经由所述一个或更多开孔从等离子体区域传递至基板。开孔的尺寸、位置及几何形状、隔板与基板之间的距离以及隔板上的电偏置以及其他特性可经选择以控制到达基板的带电物种的数量。在一些情况下，隔板亦可作为帮助产生且界定处理腔室中的等离子体区域的电极。
本发明的实施例包括具有定位于处理腔室内部的电容耦合式等离子体(CCP)单元的基板处理系统。CCP单元可包括在第一电极与第二电极之间形成的等离子体激发区域。第一电极可包括多个第一开孔以准许第一气体进入等离子体激发区域，且第二电极可包括多个第二开孔以准许活化气体离开等离子体激发区域。系统可进一步包括气体入口及基座，气体入口用于供应第一气体至CCP单元的第一电极，基座可操作以支撑基板。基座定位在气体反应区域下方，活化气体从CCP单元前进进入气体反应区域。
本发明的实施例进一步包括额外基板处理系统。这些系统可包括用于供应第一气体至处理腔室的气体入口、包含多个开孔的电极及喷淋头。喷淋头可包括多个第一沟槽及多个第二沟槽，多个第一沟槽准许处理腔室内活化气体至气体反应区域的流通，多个第二沟槽准许第二气体至气体反应区域的流通。活化气体在电极与喷淋头之间的等离子体激发区域内形成，活化气体亦作为第二电极。系统可进一步包括定位在气体反应区域下方的基座，基座可操作以支撑基板。
本发明的实施例更进一步包括具有离子抑制器的基板处理系统。这些系统可包括用于供应第一气体至处理腔室的气体入口、具有多个第一开孔的电极及离子抑制器。离子抑制器可包括具有多个第二开孔的电性导电平板，多个第二开孔准许处理腔室内活化气体至气体反应区域的流通。活化气体在电极与离子抑制器之间的等离子体激发区域内形成。这些系统可进一步包括定位在气体反应区域下方的基座，基座为可操作的以支撑基板。
在随后描述中将部分地阐述额外实施例及特征结构，且对于本领域普通技术人员而言，额外实施例及特征结构在审阅说明书之后将部分地变得显而易见或可由本发明的实践来了解。本发明的特征结构及优点可利用说明书中所述的工具、组合及方法来实现且完成。
附图简述
可藉由参阅说明书的剩余部分及附图来实现对本发明的性质及优点的进一步理解，其中贯穿若干附图所使用的相同元件符号代表相同部件。在一些情况下，子标号与元件符号相关联且跟随有连字符以表示多个相同部件中的一个。当引用元件符号而未指明存在子标号时，引用的元件符号意欲指全部此类多个相同部件。
图1图示根据本发明的实施例的包括具有CCP单元及喷淋头的处理腔室的处理系统的简化横截面图；
图2图示根据本发明的实施例的包括具有CCP单元及喷淋头的处理腔室的处理系统的简化透视图；
图3图示根据本发明的实施例的一对气体混合物穿过处理系统的气流路径的简化示意图；
图4图示包括具有喷淋头的处理腔室的处理系统的简化横截面图，喷淋头亦作为离子抑制元件；
图5图示根据本发明的实施例的包括具有离子抑制平板的处理腔室的处理系统的简化横截面图，离子抑制平板从气体反应区域分隔等离子体区域；
图6A图示根据本发明的实施例的离子抑制元件的简化透视图；
图6B图示根据本发明的实施例的亦作为离子抑制元件的喷淋头的简化透视图；
图7A图示根据本发明的实施例的用于离子抑制元件中的开孔的一些示例性孔几何形状；
图7B图示根据本发明的实施例的孔几何形状开孔的示意图；以及
图8图示根据本发明的实施例的帮助界定处理腔室中的等离子体区域的一对电极中的相对开孔的示例性配置。
具体实施方式
描述了用于产生及控制半导体处理腔室内部的等离子体的系统和方法。等离子体可起源于处理腔室内部、远端等离子体单元中的处理腔室外部，或两者。腔室内部含有等离子体，且等离子体利用离子抑制元件与基板晶圆分离，离子抑制元件定位在等离子体与基板晶圆之间。在一些情况下，此离子抑制元件亦可作为等离子体产生单元的部分（例如电极）、气体/前驱物分配系统的部分（例如喷淋头）和/或处理器系统的另一部件的部分。在额外情况下，离子抑制元件可主要用于界定在等离子体产生区域与气体反应区域之间的隔板，气体反应区域在基板晶圆的暴露表面上蚀刻和/或沉积材料。
离子抑制元件用以减少或消除自等离子体产生区域前进至基板的离子带电物种的数量。不带电中性粒子及自由基物种仍可穿过离子抑制器中的开孔以与基板反应。应注意，在环绕基板的反应区域中完全消除离子带电物种并非始终为期望目标。在多数情况下，要求离子物种到达基板以执行蚀刻和/或沉积工艺。在这些情况下，离子抑制器帮助将反应区域中离子物种的浓度控制在辅助工艺的等级。
示例性处理系统配置
示例性处理系统配置包括离子抑制器，离子抑制器定位于处理腔室内部以控制到达基板的等离子体激发物种的类型及数量。在一些实施例中，离子抑制器单元可为穿孔的平板，穿孔的平板亦可作为等离子体产生单元的电极。在额外实施例中，离子抑制器可为喷淋头，喷淋头分配气体及激发物种至与基板接触的反应区域。在更多实施例中，离子抑制可由穿孔平板离子抑制器及喷淋头实现，等离子体激发物种穿过穿孔平板离子抑制器及喷淋头两者以到达反应区域。
图1及图2分别图示处理系统的简化横截面图及简化透视图，处理系统包括作为电容耦合式等离子体(CCP)单元102的部分的离子抑制器110及亦可有助于离子抑制的喷淋头104两者。处理系统亦可选择性地包括位于处理腔室100外部的部件，诸如流体供应系统114。处理腔室100可保持不同于环绕压力的内部压力。举例而言，处理腔室内部的压力可为约10毫托至约20托。
CCP单元102可用以在处理腔室100内部产生等离子体。CCP单元102的部件可包括盖或热电极106及离子抑制元件110（本文亦称为离子抑制器）。在一些实施例中，盖106及离子抑制器110为导电电极，导电电极可相对于彼此经电偏置以产生足够强的电场来将电极之间的气体离子化为等离子体。电绝缘体108可分离盖106电极及离子抑制器110电极以防止盖106电极及离子抑制器110电极在产生等离子体时短路。盖106、绝缘体108及离子抑制器110的暴露于等离子体的表面可在CCP单元102中界定等离子体激发区域112。
产生等离子体的气体可从气体供应系统114穿过气体入口116前进进入等离子体激发区域112。产生等离子体的气体可用来在激发区域112中触发等离子体，或可保持已形成的等离子体。在一些实施例中，产生等离子体的气体在穿过入口116向下游前进至CCP单元102之前可能已至少部分地转化成为远端等离子体系统（未图示）中的等离子体激发物种，远端等离子体系统定位于处理腔室100外部。当等离子体激发物种到达等离子体激发区域112时，等离子体激发物种可在CCP单元102中经进一步激发或穿过等离子体激发区域而不进行进一步激发。在一些操作中，由CCP单元102提供的增加激发的程度可取决于基板处理顺序和/或条件而随时间改变。
产生等离子体的气体和/或等离子体激发物种可穿过盖106中的多个孔（未图示）以更均匀地输送进入等离子体激发区域112。示例性配置包括使入口116通向气体供应区域120以便气体/物种流经盖106中的孔进入等离子体激发区域112，其中气体供应区域120藉由盖106与等离子体激发区域112分隔。结构化且可操作的特征结构可经选择以防止等离子体从等离子体激发区域112返回至供应区域120、入口116及流体供应系统114内的显著回流。如下文图7A及图7B中所述，结构化特征结构可包括盖106中的孔的尺寸及横截面几何形状的选择，盖106阻止回流等离子体。可操作的特征结构可包括保持气体供应区域120与等离子体激发区域112之间的压力差，所述压力差保持等离子体经由离子抑制器110的单向流动。
如上所述，盖106及离子抑制器110可分别用作第一电极及第二电极，以便盖106和/或离子抑制器110可接收电荷。在这些配置中，可将电功率（例如，射频(radio frequency;RF)功率）施加至盖106、离子抑制器110，或两者。举例而言，可将电功率施加至盖106，同时将离子抑制器110接地。基板处理系统可包括为盖106和/或离子抑制器110提供电功率的RF产生器140。带电的盖106可促进等离子体在等离子体激发区域112内的均匀分配（亦即，减少局域化等离子体）。为了使得能够在等离子体激发区域112中形成等离子体，绝缘体108可使盖106与离子抑制器110电绝缘。绝缘体108可由陶瓷制得且可具有高击穿电压以避免火花放电。CCP单元102可进一步包括冷却单元（未图示），冷却单元包括一个或更多冷却流体沟槽以利用循环冷却剂（例如水）来冷却暴露于等离子体的表面。
离子抑制器110可包括多个孔122，多个孔122抑制离子带电物种向等离子体激发区域112之外的迁移，同时允许不带电的中性粒子或自由基物种穿过离子抑制器110进入活化气体输送区域124。这些不带电物种可包括高度反应物种，高度反应物种利用较少的反应载气穿过孔122进行传送。如上所述，离子物种穿过孔122的迁移可被减少且在一些情况下可完全被抑制。控制穿过离子抑制器110的离子物种的数量提供对与下层晶圆基板接触的气体混合物的增加控制，增加控制进而增加对气体混合物的沉积和/或蚀刻特性的控制。举例而言，调整气体混合物的离子浓度可显著地改变气体混合物的蚀刻选择率（例如SiOx:SiNx蚀刻比、多晶Si:SiOx蚀刻比等）。调整气体混合物的离子浓度亦可移动沉积的介电性材料的共形至流动的平衡。
多个孔122可经配置以控制穿过离子抑制器110的活化气体（亦即，离子、自由基和/或中性粒子物种）的流通。举例而言，孔的深宽比（亦即，孔直径比长度）和/或孔的几何形状可经控制以便减少穿过离子抑制器110的活化气体中的离子带电物种的流动。离子抑制器110中的孔可包括面向等离子体激发区域112的锥形部分及面向喷淋头104的圆柱形部分。圆柱形部分可经定形且标注尺寸以控制传递至喷淋头104的离子物种的流动。亦可将可调整电偏置施加至离子抑制器110作为控制穿过抑制器的离子物种的流动的额外手段。
喷淋头104定位在CCP单元102的离子抑制器110与气体反应区域130（亦即，气体活化区域）之间，气体反应区域130与可安装在基座150上的基板接触。气体及等离子体激发物种可穿过离子抑制器110进入活化气体输送区域124，活化气体输送区域124被界定在离子抑制器110与喷淋头104之间。这些气体及物种中的部分可进一步穿过喷淋头104进入与基板接触的气体反应区域130。
喷淋头可为双区域喷淋头，双区域喷淋头具有准许等离子体激发物种的流通的第一组沟槽126及输送第二气体/前驱物混合物进入气体反应/活化区域130的第二组沟槽。两组沟槽防止等离子体激发物种及第二气体/前驱物混合物发生组合，直到等离子体激发物种及第二气体/前驱物混合物到达气体反应区域130。在一些实施例中，离子抑制器110中的一个或更多孔122可与喷淋头104中的一个或更多沟槽126对准以允许至少一些等离子体激发物种穿过孔122及沟槽126而不改变等离子体激发物种的飞行方向。在额外实施例中，第二组沟槽可在面向气体反应区域130的开孔处具有环形形状，且这些环形开孔可在第一组沟槽126的圆形开孔周围进行同中心地对准。
喷淋头104中的第二组沟槽可流体耦合至经选择用于待执行的工艺的源气体/前驱物混合物（未图示）。举例而言，当处理系统经配置以执行诸如二氧化硅(SiOx)的介电性材料的沉积时，气体/前驱物混合物可包括含有硅的气体或前驱物，诸如硅烷、二硅烷、TSA、DSA、四乙氧基硅烷(TEOS)、OMCTS、TMDSO以及其他含有硅的材料。此混合物可在气体反应区域130中与氧化气体混合物反应，氧化气体混合物可包括等离子体激发物种，诸如产生等离子体的氧自由基(O)、活化分子氧(O2)及臭氧(O3)以及其他物种。当物种移动穿过离子抑制器110中的孔122时，等离子体激发物种中的过度离子可得以减少，且当物种穿过喷淋头104中的沟槽126时过度离子得以进一步减少。在另一实例中，当处理系统经配置以执行基板表面上的蚀刻时，源气体/前驱物混合物可包括诸如氧化剂、卤素、水蒸汽和/或载气之类的蚀刻剂，蚀刻剂在气体反应区域130中与从喷淋头104的第一组沟槽中分配的等离子体激发物种混合。
处理系统可进一步包括功率供应器140，功率供应器140电性耦合至CCP单元102以向盖106和/或离子抑制器110提供电功率，以在等离子体激发区域112中产生等离子体。电源供应器可被配置成取决于所执行的工艺将可调整量的功率输送至CCP单元102。例如在沉积工艺中，输送至CCP单元102的功率可经调整以设定沉积层的共形性。沉积的介电性薄膜通常在较低等离子体功率下为更可流动的，且当等离子体功率增加时沉积的介电性薄膜从可流动的转为共形的。举例而言，当等离子体功率从约1000瓦降低至约100瓦或更低（例如约900瓦、800瓦、700瓦、600瓦或500瓦或更低）时，在等离子体激发区域112中保持的含氩等离子体可产生更可流动的氧化硅层，且当等离子体功率从约1000瓦或更多（例如约1000瓦、1100瓦、1200瓦、1300瓦、1400瓦、1500瓦、1600瓦、1700瓦或更多）增加时，在等离子体激发区域112中保持的含氩等离子体可产生更共形的层。当等离子体功率自低至高地增加时，从流动沉积薄膜至共形沉积薄膜的过渡可为相对平滑及连续的，或经由相对离散的阈值进行。（单独或除其他沉积参数的外的）等离子体功率可经调整以选择沉积薄膜的共形性质与流动性质的间的平衡。
处理系统可更进一步包括基座150，基座150可操作以支撑并移动基板（例如晶圆基板）。基座150与喷淋头104之间的距离帮助界定气体反应区域130。基座在处理腔室100内可为垂直可调整或轴向可调整的，以通过相对于穿过喷淋头104的气体重新定位晶圆基板来增大或减小气体反应区域130并影响晶圆基板的沉积或蚀刻。基座150可具有热交换沟槽，热交换流体流经热交换沟槽以控制晶圆基板的温度。热交换流体的循环使得基板温度保持在相对低的温度（例如约-20℃至约90℃）下。示例性热交换流体包括乙二醇及水。
基座150亦可配置有加热元件（诸如电阻性加热元件）以将基板保持在加热温度（例如约90℃至约1100℃）下。示例性加热元件可包括嵌入基板支撑盘的单回路加热器元件，单回路加热器元件形成具有平行同心圆形式的两个或更多整圈(full turn)。加热器元件的外部可邻近支撑平台的周边设置，同时加热器元件的内部可在具有较小半径的同心圆的路径上设置。加热器元件的布线可穿过基座的杆(stem)。
图3图示一对气体混合物穿过处理系统的气流路径的简化示意图300，处理系统包括离子抑制器平板及喷淋头两者。在框305中，诸如产生等离子体的气体混合物之类的第一气体经由气体入口供应至处理腔室。第一气体可包括下列气体的一种或更多者：CF4、NH3、NF3、Ar、He、H2O、H2、O2等。在处理腔室内部，第一气体可经由等离子体放电进行激发以在框310中形成一种或更多等离子体流出物。或者（或除原位等离子体产生之外）可使用耦合至处理腔室的远端等离子体系统(RPS)产生非原位等离子体，非原位等离子体的等离子体激发产物被引入至处理腔室中。RPS等离子体激发产物可包括离子带电等离子体物种以及中性粒子及自由基基物种。
不论等离子体流出物是由原位等离子体单元产生、由RPS单元产生，还是由两者产生，等离子体流出物皆可在框315中穿过处理腔室中的离子抑制器。当等离子体活化的第一气体前进至处理腔室中的气体反应区域时，离子抑制器可阻断和/或控制离子物种的流通，同时允许自由基和/或中性粒子物种的流通。在框320中，可将第二气体引入至处理腔室中。如上所述，第二气体的内含物取决于所执行的工艺。举例而言，第二气体可包括用于沉积工艺的沉积化合物（例如含硅化合物）及用于蚀刻工艺的蚀刻剂。第一气体与第二气体之间的接触及反应可被防止，直到气体到达处理腔室的气体反应区域。
在气体反应区域之前防止第一气体及第二气体相互作用的一个方式为使第一气体及第二气体流经双区域喷淋头中的不同的沟槽。框330图示活化的第一气体及第二气体穿过具有多个第一沟槽的双区域喷淋头(DZSH)，多个第一沟槽准许活化的第一气体穿过喷淋头而不与穿过多个第二沟槽的第二气体相互作用。在离开DZSH之后，在框335中，第一气体及第二气体可在处理腔室的气体反应区域中混合。取决于所执行的工艺，组合气体可反应以在基板暴露表面上沉积材料、从基板中蚀刻材料或两者皆有。
现参阅图4，图4图示具有喷淋头402的处理系统400的简化横截面图，喷淋头402亦作为离子抑制元件。在图示的配置中，用于等离子体产生的第一气源402流体耦合至任选的RPS单元404，在RPS单元404中可产生第一等离子体且等离子体流出物经由气体入口408传送进入处理腔室406。在处理腔室406内部，气体可穿过气体分配板412中的孔410进入界定在平板412与喷淋头402之间的气体区域414。在一些实施例中，此区域414可为等离子体激发/活化区域，在等离子体激发/活化区域中气体分配板412及喷淋头402作为第一电极及第二电极，以进一步激发气体和/或产生第一等离子体。气体分配板412中的孔410可在尺寸上或在几何形状上经构造以阻止回流等离子体。平板412及喷淋头402可与RF功率产生器422进行耦合，RF功率产生器422向平板412及喷淋头402供应电荷以激发气体和/或产生等离子体。在一个实施例中，喷淋头402接地，同时电荷被施加至平板412。
气体区域414中的激发气体或活化气体可穿过喷淋头402进入邻近基板418的气体反应区域416，以从基板表面蚀刻材料和/或在基板表面上沉积材料。喷淋头402可为双区域喷淋头(DZSH)，双区域喷淋头允许激发气体从气体区域414进入气体反应区域416，同时亦允许第二气体（亦即，前驱物气体/混合物）经由第二气体入口（未图示）从外部源（未图示）流入气体反应区域416。DZSH可防止活化/激发气体与第二气体混合，直到气体流入气体反应区域416。
激发气体可流经DZSH中的多个孔424，多个孔424可在尺寸上和/或几何形状上经构造以控制或防止等离子体（亦即，离子带电物种）的流通，同时允许活化/激发气体（亦即，反应性自由基或不带电中性粒子物种）的流通。图7A提供可在DZSH中使用的孔配置的示例性实施例。除孔424之外，DZSH亦可包括多个沟槽426，第二气体流经多个沟槽426。第二气体（前驱物气体）可经由一个或更多个穿孔（未图示）离开喷淋头402，一个或更多个穿孔邻近于孔424定位。DZSH可作为第二气体输送系统及离子抑制元件两者。
如上所述，混合气体可在基板418的表面沉积材料和/或蚀刻基板418的表面，基板418可定位在平台420上。平台420可在处理腔室406内垂直地移动。在处理腔室406内基板418的处理可受孔424的配置、在气体区域414内的压力和/或在处理腔室内基板418的位置影响。另外，孔424的配置和/或在气体区域414内的压力可控制被允许进入气体激发区域416的离子物种（等离子体）的量。气体混合物的离子浓度除改变蚀刻选择性之外，亦可移动所沉积的介电性材料的共形至流动的平衡。
现在参阅图5，图5图示具有作为离子抑制元件的平板512（亦即，离子抑制器平板）的另一处理系统500的简化横截面图。在图示的配置中，将第一气源502流体耦合至RPS单元504，在RPS单元504中可产生第一等离子体且等离子体流出物经由气体入口508传送进入处理腔室506。可将等离子体流出物传送至界定在离子抑制器平板512与气体入口508之间的气体区域514。在气体区域514内部，气体可穿过离子抑制器512中的孔510进入界定在离子抑制器512与基板528之间的气体反应/活化区域516。基板518可支撑在如上所述的平台520上以便基板在处理腔室506内可移动。
亦如上所述，孔510可在尺寸上和/或几何形状上经构造以便防止和/或控制离子带电物种（亦即，等离子体）的流通，同时准许不带电中性粒子或自由基物种（亦即，活化气体）的流通。离子物种的流通可藉由改变在气体区域514内的等离子体的压力而可控制。气体区域514中的压力可藉由控制经由气体入口508传送的气体量来控制。可将前驱物气体（亦即，第二气体）在一个或更多第二气体入口522处引入至处理腔室506，一个或更多第二气体入口522垂直地定位于离子抑制器512下方或与离子抑制器512平行。第二气体入口522可包括处理腔室506壁中的一个或更多穿孔、管道等（未图示），且可进一步包括一个或更多气体分配沟槽（未图示）以输送前驱物气体至穿孔、管道等。在一个实施例中，离子抑制器512包括一个或更多第二气体入口，前驱物气体流经所述一个或更多第二气体入口。离子抑制器512的第二气体入口可将前驱物气体输送到气体反应区域516中。在此实施例中，离子抑制器512作为如前所述的离子抑制器及双区域喷淋头两者。穿过孔510的活化气体及在处理腔室506中引入的前驱物气体可在气体反应室516中进行混合以用于蚀刻和/或沉积工艺。
现已描述了处理腔室的示例性实施例，现将注意力导引至诸如离子抑制器平板412及离子抑制器平板512及喷淋头402之类的离子抑制器的示例性实施例。
示例性离子抑制器
图6A图示根据本发明的实施例的离子抑制元件600（离子抑制器）的简化透视图。离子抑制元件600可对应图4和/或图5的离子抑制器平板。透视图图示离子抑制元件或平板600的顶部。离子抑制平板600通常可为圆形且可包括多个等离子体流出物通道602，其中通道602的每一个包括一个或更多通孔，一或更多通孔允许等离子体流出物从第一区域（例如等离子体区域）至第二区域（例如气体反应区域或喷淋头）的流通。在一个实施例中，虽然可能有其他配置，但是通道602的通孔可经布置以形成一个或更多圆形图案。如先前所述，通孔可在几何形状上或在尺寸上经配置以控制或防止离子物种的流通，同时允许不带电中性粒子或自由基物种的流通。通孔可具有朝向离子抑制平板600的顶表面的较大内径及朝向离子抑制平板的底表面的较小内径。另外，通孔通常可为圆柱形、圆锥形，或圆柱形及圆锥形的任何组合。图7A至图7B提供通孔的配置的示例性实施例。
多个通道可基本上均匀地分配在离子抑制平板600的表面上，多个通道可提供穿过离子抑制平板600进入第二区域的中性粒子或自由基物种的均匀流通。在一些实施例中，诸如图5的实施例，处理腔室可仅包括离子抑制平板600，而在其他实施例中，处理腔室可包括离子抑制平板600及喷淋头两者，诸如图6B的喷淋头，或处理腔室可包括既作为双区域喷淋头又作为离子抑制平板的单个平板。
图6B图示根据本发明的实施例的喷淋头620的简化的底部透视图。喷淋头620可对应于图4中所图示的喷淋头。如先前所述，喷淋头620可垂直地定位为邻近气体反应区域且在气体反应区域之上。类似于离子抑制平板600，喷淋头620通常可为圆形且可包括多个第一孔622及多个第二孔624。多个第一孔622可允许等离子体流出物穿过喷淋头620进入气体反应区域，同时多个第二孔624允许诸如硅前驱物、蚀刻剂等前驱物气体进入气体反应区域。
多个第一孔622可为从喷淋头620的顶表面穿过喷淋头延伸的通孔。在一个实施例中，多个第一孔622中的每一者可具有朝向喷淋头620的顶表面的较小内径(ID)及朝向底表面的较大ID。此外，多个第一孔622的底部边缘可为斜切626以帮助在等离子体流出物离开喷淋头时均匀地分配气体反应区域中的等离子体流出物，且因此促进等离子体流出物及前驱物气体的均匀混合。第一孔622的较小ID可为在约0.5mm与约20mm之间。在一个实施例中，较小ID可在约1mm与6mm之间。第一孔622的横断面形状通常可为圆柱形、圆锥形，或圆柱形及圆锥形的任何组合。另外，当离子抑制元件600及喷淋头620两者皆在处理腔室中使用时，第一孔622可与通道602的通孔同心地对准。同心对准可经由处理腔室中的离子抑制元件600及喷淋头620两者促进活化气体的流通。
在另一实施例中，多个第一孔622可为从喷淋头620的顶表面延伸穿过喷淋头的通孔，其中第一孔622中的每一者具有朝向喷淋头的顶表面的较大的ID及朝向喷淋头的底表面的较小ID。另外，第一孔622可包括在较大ID与较小ID之间过渡的锥形区域。此配置可防止或调节穿过通孔的等离子体的流通，同时准许活化气体的流通。这些实施例可在适当位置或除离子抑制元件600之外使用。图7A提供这些通孔的示例性实施例。
多个第一孔622的数目可为在约60与约2000之间。多个第一孔622亦可具有各种形状，但是多个第一孔622通常为圆形。在处理腔室包括离子抑制平板600及喷淋头620两者的实施例中，多个第一孔622可与通道602基本对准以促进穿过离子抑制平板及喷淋头的等离子体流出物的流通。
多个第二孔624可从喷淋头620的底表面部分地延伸穿过喷淋头。多个第二孔可与多个沟槽耦合或连接至多个沟槽（未图示），多个沟槽（未图示）从外部气源（未图示）输送前驱物气体（例如沉积化合物、蚀刻剂等）至第二孔624。第二孔可包括在喷淋头620的底表面上的较小ID及在喷淋头的内容积中的较大ID。第二孔624的数目在不同实施例中可为在约100与约5000之间或在约500与约2000之间。第二孔的较小ID的直径（亦即，在底表面上孔的直径）可为在约0.1mm与约2mm之间。第二孔624通常为圆形且同样可为圆柱形、圆锥形、或圆柱形及圆锥形的任何组合。第一孔及第二孔两者可在喷淋头620的底表面上均匀地分布以促进等离子体流出物及前驱物气体的均匀混合。
参阅图7A，图7A图示通孔的配置的示例性实施例。所述的通孔通常包括朝向孔的上端的较大内径（ID）区域及朝向孔的底部或下端的较小ID区域。较小ID可为在约0.2mm与约5mm的间。另外，孔的深宽比（亦即，较小ID与孔长度之比）可为大约1比20。这些配置可基本上阻断和/或控制等离子体流出物的离子物种的流通，同时允许自由基或中性粒子物种的流通。举例而言，改变深宽比可调节允许穿过通孔的等离子体的量。可藉由改变在通孔正上方的区域内等离子体的压力来进一步调节等离子体的流通。
现参阅特定配置，通孔702可包括在孔的上端的较大ID区域704及在孔的下端的较小ID区域706，以及在较大ID与较小ID之间的阶梯形边缘。通孔710可包括在孔的上端的较大ID区域712及在孔的下端的较大ID区域716，以及在孔的上端的较大ID区域712与在孔的下端的较大ID区域716之间的较小ID区域714。在较大ID区域与较小ID区域之间的过渡可为阶梯形或钝的以提供在区域之间的突然转换。
通孔720可包括在孔的上端的较大ID区域722及在孔的下端的较小ID区域726以及锥形区域724，锥形区域724在较大区域与较小区域之间以角度θ过渡。较小ID区域726的高度728可取决于孔的总高度727、锥形区域724的角度θ、较大ID及较小ID。在一个实施例中，锥形区域724包含在约15°与约30°之间且较佳地约22°的角度；总高度727为在约4mm与约8mm之间且较佳为约6.35mm，较大ID为在约1mm与约4mm之间且较佳为约2.54mm，较小ID为约0.2mm与1.2mm之间且较佳为约0.89mm，以便较小ID区域726区域的高度728为在约1mm与约3mm之间，且较佳为约2.1mm。
通孔730可包括在孔的上端的第一ID区域732、与第一ID区域732同心地对准且垂直地定位于第一ID区域732下方的第二ID区域734、以及与第二ID区域734同心地对准且垂直地定位于第二ID区域734下方的第三ID区域736。第一ID区域732可包含较大ID，第二ID区域734可包含较小ID，且第三ID区域736可包含比第二ID区域734稍大的ID。第三ID区域736可延伸至孔的下端或可向外成锥形至出口ID737。在第三ID区域736与出口ID737之间的锥形可以角度θ3成锥形，角度θ3可为在约15°与约30°之间且较佳为约22°。第二ID区域734可包括从第一ID区域732以角度θ1过渡的斜切边缘，角度θ1可为在约110°与约140°之间。类似的，第二ID区域734可包括以角度θ2向第三ID区域736中过渡的斜切边缘，角度θ2亦可为在约110°与约140°之间。在一个实施例中，第一区域732的较大ID可为在约2.5mm与约7mm之间且较佳为约3.8mm，第二ID区域734的较小ID可为在约0.2mm与约5mm之间且较佳为约0.04mm，第三ID区域736的稍大ID可为在约0.75mm与约2mm之间且较佳为约1.1mm，且出口ID可为在约2.5mm与约5mm之间且较佳为约3.8mm。
在较大ID区域与较小ID区域之间的过渡（钝的、阶梯形的、锥形的等）基本上可阻止离子物种流通穿过孔，同时允许自由基或中性粒子物种的流通。举例而言，现参阅图7B，图7B图示通孔720的放大附图，通孔720包括在较大ID区域722与较小ID区域726之间的过渡区域724。锥形区域724可基本上防止等离子体725穿透通孔702。举例而言，当等离子体725穿透进入通孔720时，离子物种可藉由接触锥形区域724的壁来失活或接地，从而限制穿过通孔的等离子体流通并使等离子体包含在通孔720上方的区域内。然而，自由基或中性粒子物种可穿过通孔720。因此，通孔720可过滤等离子体720以防止或控制不希望有的物种的流通。在示例性实施例中，通孔的较小ID区域726包含1mm或更小的ID。为保持穿透通孔的自由基和/或中性粒子物种的显著浓度，可控制较小ID区域的长度和/或锥形角度。
除防止等离子体流通之外，本文所述的通孔亦可用来调节等离子体流通以便允许期望等级的等离子体穿过通孔。调节穿过通孔的等离子体流动可包括增加在离子抑制器平板上方的气体区域中的等离子体压力，以便期望比例的等离子体能够穿过离子抑制器而不失活或接地。
现在参阅图8，图8图示电容耦合式等离子体(CCP)单元800的简化附图。具体而言，所图示的CCP单元800包括界定等离子体产生区域810的顶部平板802及底部平板804，在等离子体产生区域810中含有等离子体。如先前所述，可藉由RPS（未图示）产生等离子体且经由通孔806将等离子体输送至等离子体产生区域810。替代地或另外，例如，当第一电极及第二电极耦合至功率产生单元（未图示）时，藉由利用顶部平板802及底部平板804可在CCP单元800中产生等离子体。
顶部平板802可包括通孔806，通孔806允许将工艺气体和/或等离子体输送入等离子体产生区域810中，同时防止等离子体穿过顶部平板802回流。通孔806可类似于通孔730配置，通孔806具有第一ID区域、第二ID区域及第三ID区域（分别为820、822及824），并具有在邻接区域（828及829）之间的斜切边缘及在第三ID区域824与出口ID之间过渡的锥形区域826。当等离子体穿透入通孔806时，在第三ID区域824与出口ID之间的锥形区域826和/或在第二ID区域与第三ID区域（分别为822及824）之间的斜切边缘可藉由使离子物种失活或接地来防止等离子体回流。
类似地，底部平板804可包括通孔808，通孔808允许自由基或中性粒子物种穿过通孔，同时防止或控制离子物种的流通。通孔808可类似于通孔720配置，通孔808具有较大ID区域830、较小ID区域832及在较大ID区域830与较小ID区域832之间过渡的锥形区域834。锥形区域834可如先前所说明地藉由使离子物种失活或接地来防止穿过通孔808的等离子体流动，同时允许自由基或中性粒子物种穿过通孔808。
为进一步防止穿过通孔的等离子体流通，802和/或804，顶部平板802和/或底部平板804可接收电荷来电性偏置等离子体，并使等离子体包含在等离子体产生区域810内和/或调整穿过底部平板的活化气体中的离子浓度。使用CCP单元800中的顶部平板802及底部平板804，可基本上在等离子体产生区域810中产生和/或保持等离子体，同时将自由基及中性粒子物种输送至气体反应区域以与一种或更多前驱物气体进行混合，从而蚀刻基板表面上的材料或在基板表面上沉积材料。
藉由已描述的若干实施例，本领域普通技术人员将认识到，在不脱离本发明的精神的情况下，可使用各种修改、替代性结构及等效形式。另外，未描述许多熟知工艺及元件，以避免不必要地模糊本发明。因此，上述描述将不视为限制本发明的范围。
在提供数值范围的情况下，应理解，也特定地揭示在数值范围的上限与下限之间的每一插入值，除非上下文另外清楚地规定，每一插入值达下限的单位的十分之一。本发明涵盖在说明范围内的任何说明值或插入值与在本说明范围内的任何其他说明值或插入值之间的每一较小范围。这些较小范围的上限及下限可独立地包括在范围内或排除在范围外，且受制于说明范围内任何特定的排他性上下限，本发明亦涵盖上限及下限中的任一者包含在较小范围内、上限及下限皆不包含在较小范围内、或者上限及下限皆包含在较小范围内的每一范围。在说明范围包括上下限中的一者或两者的情况下，亦包括排除所包括的那些上下限中的一者或两者的范围。
如本文及所附权利要求书中所使用，除非上下文另外清楚地规定，否则单数形式“一”及“所述”包括多个对象。因此，例如“工艺”的引用包括多个这些工艺，且“所述电极开孔”的引用包括对一个或更多电极开孔的引用及本领域普通技术人员所已知的等效形式等等。
此外，在此说明书及权利要求书中使用的用语“包含”及“包括”时，单词“包含”及“包括”旨在指定所述特征结构、整体、部件或步骤的存在，但是单词“包含”及“包括”不排除一个或更多其他特征结构、整体、部件、步骤、动作或群组的存在或添加。

Claims (14)

1.一种基板处理系统，所述基板处理系统包括：
电容耦合式等离子体(CCP)单元，所述电容耦合式等离子体(CCP)单元定位于处理腔室内部，其中所述CCP单元包括在第一电极与一第二电极之间形成的等离子体激发区域，且其中所述第一电极包括多个第一开孔以准许第一气体进入所述等离子体激发区域，且所述第二电极包括多个第二开孔以准许活化气体离开所述等离子体激发区域；
气体入口，所述气体入口用于供应所述第一气体至所述CCP单元的所述第一电极；以及
基座，所述基座可操作以支撑基板，其中所述基座定位于一气体反应区域下方，所述活化气体从所述CCP单元中前进进入所述气体反应区域。
2.如权利要求1所述的系统，其特征在于，所述系统进一步包括喷淋头，所述喷淋头定位在所述CCP单元的所述第二电极与在所述基座上方的所述气体反应区域之间，其中所述喷淋头包括准许所述活化气体至所述气体反应区域的流通的多个第一喷淋头沟槽，以及准许第二气体至所述气体反应区域的流通的多个第二沟槽。
3.如权利要求2所述的系统，其特征在于，在所述第二电极中的所述多个第二开孔与所述多个第一喷淋头沟槽同心地对准。
4.如权利要求1所述的系统，其特征在于，所述系统进一步包括定位在所述第二电极与所述基座之间的一个或更多第二气体入口，其中所述第二气体入口供应第二气体至所述气体反应区域。
5.如权利要求1所述的系统，其特征在于，所述系统进一步包括远端等离子体系统，所述远端等离子体系统耦合至所述气体入口且可操作以激发经由所述气体入口进入所述处理腔室的所述第一气体。
6.如权利要求1所述的系统，其特征在于，所述活化气体包括至少一个反应性自由基。
7.一种基板处理系统，所述基板处理系统包括：
气体入口，所述气体入口用于供应第一气体至处理腔室；
电极，所述电极包括多个开孔；
喷淋头，所述喷淋头包括多个第一沟槽及多个第二沟槽，所述多个第一沟槽准许在所述处理腔室中活化气体至气体反应区域的流通，所述多个第二沟槽准许第二气体至所述气体反应区域的流通，其中所述活化气体在所述电极与所述喷淋头之间的等离子体激发区域中形成，所述喷淋头亦作为第二电极；以及
基座，所述基座可操作以支撑基板，其中所述基座定位于所述气体反应区域下方。
8.如权利要求7所述的系统，其特征在于，在所述喷淋头中的所述多个第一沟槽抑制所述等离子体激发区域中的等离子体进入所述气体反应区域，同时准许所述活化气体穿过所述喷淋头。
9.如权利要求7所述的系统，其特征在于，所述系统进一步包括定位在所述喷淋头与所述基座之间的一个或更多第二气体入口，其中所述第二气体入口供应第二气体至所述气体反应区域。
10.如权利要求7所述的系统，其特征在于，所述系统进一步包括远端等离子体系统，所述远端等离子体系统耦合至所述气体入口且可操作以激发经由所述气体入口进入所述处理腔室的所述第一气体。
11.一种基板处理系统，所述基板处理系统包括：
气体入口，所述气体入口用于供应第一气体至处理腔室；
电极，所述电极包括多个第一开孔；
离子抑制器，所述离子抑制器包括具有多个第二开孔的电性导电平板，所述多个第二开孔准许在所述处理腔室中活化气体至气体反应区域的流通，其中所述活化气体在所述电极与所述离子抑制器之间的等离子体激发区域中形成；以及
基座，所述基座可操作以支撑基板，其中所述基座定位于所述气体反应区域下方。
12.如权利要求11所述的系统，其特征在于，所述系统进一步包括定位在所述离子抑制器与所述基座之间的喷淋头。
13.如权利要求11所述的系统，其特征在于，所述系统进一步包括远端等离子体系统，所述远端等离子体系统耦合至所述气体入口且可操作以激发经由所述气体入口进入所述处理腔室的所述第一气体。
14.如权利要求11所述的系统，其特征在于，所述系统包括电功率供应器，所述电功率供应器耦合至所述电极及所述离子抑制器，其中所述功率供应器可操作以在所述离子抑制器中产生可调整偏置电压来调整从所述等离子体激发区域传递至所述气体反应区域的所述活化气体中的离子浓度。
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