CN102783030B - 脉冲信号输出电路和移位寄存器 - Google Patents
脉冲信号输出电路和移位寄存器 Download PDFInfo
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- CN102783030B CN102783030B CN201180011903.4A CN201180011903A CN102783030B CN 102783030 B CN102783030 B CN 102783030B CN 201180011903 A CN201180011903 A CN 201180011903A CN 102783030 B CN102783030 B CN 102783030B
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Classifications
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- H—ELECTRICITY
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- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- G—PHYSICS
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3674—Details of drivers for scan electrodes
- G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
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PCT/JP2011/055001 WO2011108678A1 (en) | 2010-03-02 | 2011-02-25 | Pulse signal output circuit and shift register |
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US8330492B2 (en) | 2006-06-02 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
US8559588B2 (en) * | 2009-05-28 | 2013-10-15 | Sharp Kabushiki Kaisha | Shift register |
WO2011070929A1 (en) * | 2009-12-11 | 2011-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
KR101706292B1 (ko) * | 2010-03-02 | 2017-02-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 펄스 신호 출력 회로 및 시프트 레지스터 |
KR101389120B1 (ko) * | 2010-03-02 | 2014-04-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 펄스 신호 출력 회로 및 시프트 레지스터 |
KR101838628B1 (ko) | 2010-03-02 | 2018-03-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 펄스 신호 출력 회로 및 시프트 레지스터 |
KR102190686B1 (ko) | 2010-05-21 | 2020-12-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 펄스 출력 회로, 시프트 레지스터, 및 표시 장치 |
US8718224B2 (en) | 2011-08-05 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Pulse signal output circuit and shift register |
JP6204004B2 (ja) | 2011-08-31 | 2017-09-27 | 株式会社半導体エネルギー研究所 | 二次電池の作製方法 |
JP2013093565A (ja) * | 2011-10-07 | 2013-05-16 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP6099372B2 (ja) * | 2011-12-05 | 2017-03-22 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
US8995607B2 (en) | 2012-05-31 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Pulse signal output circuit and shift register |
JP6285150B2 (ja) | 2012-11-16 | 2018-02-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9041453B2 (en) * | 2013-04-04 | 2015-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Pulse generation circuit and semiconductor device |
TWI654614B (zh) * | 2013-07-10 | 2019-03-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
TWI666623B (zh) * | 2013-07-10 | 2019-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置、驅動器電路及顯示裝置 |
WO2015083034A1 (en) | 2013-12-02 | 2015-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US9349751B2 (en) | 2013-12-12 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9698170B2 (en) * | 2014-10-07 | 2017-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display module, and electronic device |
CN104464628B (zh) * | 2014-12-18 | 2017-01-18 | 京东方科技集团股份有限公司 | 移位寄存器单元及驱动方法、栅极驱动电路及显示装置 |
CN106356030B (zh) * | 2015-07-17 | 2019-06-28 | 群创光电股份有限公司 | 栅极驱动电路 |
CN104966506B (zh) * | 2015-08-06 | 2017-06-06 | 京东方科技集团股份有限公司 | 一种移位寄存器、显示面板的驱动方法及相关装置 |
CN105096865B (zh) * | 2015-08-06 | 2018-09-07 | 京东方科技集团股份有限公司 | 移位寄存器的输出控制单元、移位寄存器及其驱动方法以及栅极驱动装置 |
CN105225635B (zh) * | 2015-10-20 | 2018-03-23 | 信利(惠州)智能显示有限公司 | 阵列基板行驱动电路、移位寄存器、阵列基板及显示器 |
CN105448266B (zh) * | 2016-01-07 | 2018-01-12 | 武汉华星光电技术有限公司 | 栅极驱动电路和使用栅极驱动电路的液晶显示器 |
CN105609072B (zh) * | 2016-01-07 | 2018-03-27 | 武汉华星光电技术有限公司 | 栅极驱动电路和使用栅极驱动电路的液晶显示器 |
US10586495B2 (en) * | 2016-07-22 | 2020-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
TWI594223B (zh) * | 2016-09-07 | 2017-08-01 | 友達光電股份有限公司 | 陣列基板與應用其之顯示裝置 |
TWI637184B (zh) * | 2017-07-28 | 2018-10-01 | 大陸商北京集創北方科技股份有限公司 | Touch screen test method, touch screen test system and automatic test device |
CN107481659B (zh) * | 2017-10-16 | 2020-02-11 | 京东方科技集团股份有限公司 | 栅极驱动电路、移位寄存器及其驱动控制方法 |
JP2019090927A (ja) * | 2017-11-15 | 2019-06-13 | シャープ株式会社 | 走査信号線駆動回路およびそれを備えた表示装置 |
CN108039150B (zh) * | 2017-11-16 | 2020-05-19 | 武汉华星光电半导体显示技术有限公司 | 移位寄存电路及移位寄存单元 |
CN108364601B (zh) * | 2018-03-07 | 2020-07-07 | 京东方科技集团股份有限公司 | 一种移位寄存器、栅极驱动电路及显示装置 |
CN108364622B (zh) * | 2018-04-24 | 2020-11-06 | 京东方科技集团股份有限公司 | 移位寄存器单元及其驱动方法、驱动装置和显示装置 |
TWI665847B (zh) * | 2018-11-20 | 2019-07-11 | 聯陽半導體股份有限公司 | 電源切換系統 |
TWI714293B (zh) * | 2019-10-03 | 2020-12-21 | 友達光電股份有限公司 | 移位暫存電路 |
EP4134940A4 (en) * | 2020-04-10 | 2023-05-17 | BOE Technology Group Co., Ltd. | DISPLAY SUBSTRATE AND METHOD OF MAKING THEREOF, AND DISPLAY APPARATUS |
CN114270431B (zh) * | 2020-06-04 | 2023-06-02 | 京东方科技集团股份有限公司 | 显示基板、制作方法和显示装置 |
CN112530937B (zh) * | 2020-12-02 | 2022-09-27 | Tcl华星光电技术有限公司 | 一种静电保护电路和显示面板 |
JP2022138595A (ja) * | 2021-03-10 | 2022-09-26 | キオクシア株式会社 | メモリシステムおよび制御方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040217935A1 (en) * | 2003-04-29 | 2004-11-04 | Jin Jeon | Gate driving circuit and display apparatus having the same |
CN1577028A (zh) * | 2003-07-18 | 2005-02-09 | 株式会社半导体能源研究所 | 显示器 |
US20050062515A1 (en) * | 2003-01-17 | 2005-03-24 | Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation | Pulse output circuit, shift register and electronic equipment |
CN101166023A (zh) * | 2006-10-17 | 2008-04-23 | 株式会社半导体能源研究所 | 脉冲输出电路、移位寄存器、以及显示装置 |
CN101221818A (zh) * | 2006-10-03 | 2008-07-16 | 三菱电机株式会社 | 移位寄存器电路以及包括该移位寄存器电路的图像显示装置 |
JP2009177296A (ja) * | 2008-01-22 | 2009-08-06 | Seiko Epson Corp | 出力回路、出力方法、出力回路の製造方法、および電子機器 |
Family Cites Families (201)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5164383U (ko) | 1974-11-15 | 1976-05-20 | ||
JPS5164383A (ja) | 1974-12-02 | 1976-06-03 | Japan Aviation Electron | Teikochikahensochi |
JPS5180029U (ko) | 1974-12-17 | 1976-06-25 | ||
JPS5180029A (ja) | 1975-01-08 | 1976-07-13 | Katsuji Fujiwara | Eaabento |
JPS5671650U (ko) | 1979-11-07 | 1981-06-12 | ||
JPS5671650A (en) | 1979-11-15 | 1981-06-15 | Akebono Brake Ind Co Ltd | Liquid pressure controller for double piping in brake system of vehicle |
FR2524714B1 (fr) | 1982-04-01 | 1986-05-02 | Suwa Seikosha Kk | Transistor a couche mince |
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63242020A (ja) * | 1987-03-30 | 1988-10-07 | Toshiba Corp | ブ−トストラツプ回路 |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH02268019A (ja) | 1989-04-08 | 1990-11-01 | Nec Yamagata Ltd | 論理回路 |
JPH03293641A (ja) | 1990-04-12 | 1991-12-25 | Sharp Corp | アクティブマトリクス表示装置 |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
US6126743A (en) * | 1993-03-12 | 2000-10-03 | Sumitomo Chemical Company, Limited | Process for producing dielectrics and fine single crystal powders and thin film capacitor |
US5410583A (en) | 1993-10-28 | 1995-04-25 | Rca Thomson Licensing Corporation | Shift register useful as a select line scanner for a liquid crystal display |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
EP0820644B1 (en) * | 1995-08-03 | 2005-08-24 | Koninklijke Philips Electronics N.V. | Semiconductor device provided with transparent switching element |
JP3625598B2 (ja) * | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
GB2343068B (en) * | 1998-10-21 | 2000-12-13 | Lg Philips Lcd Co Ltd | Shift register |
KR100438525B1 (ko) * | 1999-02-09 | 2004-07-03 | 엘지.필립스 엘시디 주식회사 | 쉬프트 레지스터 회로 |
JP2000150861A (ja) * | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) * | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
JP3556533B2 (ja) | 1999-07-27 | 2004-08-18 | シャープ株式会社 | レベルシフタ回路 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) * | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) * | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP4761643B2 (ja) | 2001-04-13 | 2011-08-31 | 東芝モバイルディスプレイ株式会社 | シフトレジスタ、駆動回路、電極基板及び平面表示装置 |
JP4785271B2 (ja) | 2001-04-27 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 液晶表示装置、電子機器 |
TW582005B (en) | 2001-05-29 | 2004-04-01 | Semiconductor Energy Lab | Pulse output circuit, shift register, and display device |
KR100803163B1 (ko) | 2001-09-03 | 2008-02-14 | 삼성전자주식회사 | 액정표시장치 |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
KR100753365B1 (ko) * | 2001-10-16 | 2007-08-30 | 삼성전자주식회사 | 쉬프트 레지스터 및 이를 갖는 액정표시장치 |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
EP1443130B1 (en) * | 2001-11-05 | 2011-09-28 | Japan Science and Technology Agency | Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4083486B2 (ja) * | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
US7049190B2 (en) * | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
JP3933591B2 (ja) * | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
CN100428319C (zh) | 2002-04-08 | 2008-10-22 | 三星电子株式会社 | 驱动电路及液晶显示器 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) * | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
TWI298478B (en) * | 2002-06-15 | 2008-07-01 | Samsung Electronics Co Ltd | Method of driving a shift register, a shift register, a liquid crystal display device having the shift register |
US7105868B2 (en) * | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) * | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
US20070151144A1 (en) | 2003-05-06 | 2007-07-05 | Samsung Electronics Co., Ltd. | Detergent comprising the reaction product an amino alcohol, a high molecular weight hydroxy aromatic compound, and an aldehydye |
KR100913303B1 (ko) | 2003-05-06 | 2009-08-26 | 삼성전자주식회사 | 액정표시장치 |
JP3675457B2 (ja) | 2003-06-19 | 2005-07-27 | セイコーエプソン株式会社 | 昇圧クロック生成回路及び半導体装置 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) * | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
EP2246894B2 (en) | 2004-03-12 | 2018-10-10 | Japan Science and Technology Agency | Method for fabricating a thin film transistor having an amorphous oxide as a channel layer |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
KR101032945B1 (ko) | 2004-03-12 | 2011-05-09 | 삼성전자주식회사 | 시프트 레지스터 및 이를 포함하는 표시 장치 |
US7145174B2 (en) * | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7282782B2 (en) * | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
KR101057891B1 (ko) * | 2004-05-31 | 2011-08-19 | 엘지디스플레이 주식회사 | 쉬프트 레지스터 |
KR101137852B1 (ko) * | 2004-05-31 | 2012-04-20 | 엘지디스플레이 주식회사 | 구동 회로가 내장된 액정 표시 패널 |
US7211825B2 (en) * | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
CN100334806C (zh) * | 2004-06-30 | 2007-08-29 | 统宝光电股份有限公司 | 移位暂存器与使用其的移位暂存器组 |
US7239179B2 (en) * | 2004-08-05 | 2007-07-03 | Sony Corporation | Level conversion circuit, power supply voltage generation circuit, shift circuit, shift register circuit, and display apparatus |
US6970530B1 (en) * | 2004-08-24 | 2005-11-29 | Wintek Corporation | High-reliability shift register circuit |
KR101057297B1 (ko) * | 2004-08-31 | 2011-08-22 | 엘지디스플레이 주식회사 | 내장형 게이트 드라이버 및 이를 구비한 표시장치 |
JP2006100760A (ja) * | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) * | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
KR101074402B1 (ko) * | 2004-09-23 | 2011-10-17 | 엘지디스플레이 주식회사 | 액정표시장치 및 그의 구동방법 |
US7298084B2 (en) * | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7453065B2 (en) * | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US7868326B2 (en) * | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
US7829444B2 (en) * | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
KR20070085879A (ko) * | 2004-11-10 | 2007-08-27 | 캐논 가부시끼가이샤 | 발광 장치 |
US7791072B2 (en) * | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
US7863611B2 (en) * | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
RU2402106C2 (ru) * | 2004-11-10 | 2010-10-20 | Кэнон Кабусики Кайся | Аморфный оксид и полевой транзистор с его использованием |
JP2006164477A (ja) | 2004-12-10 | 2006-06-22 | Casio Comput Co Ltd | シフトレジスタ、該シフトレジスタの駆動制御方法及び該シフトレジスタを備えた表示駆動装置 |
US7579224B2 (en) * | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI445178B (zh) * | 2005-01-28 | 2014-07-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
TWI412138B (zh) * | 2005-01-28 | 2013-10-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) * | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) * | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) * | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) * | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) * | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
JP4993544B2 (ja) | 2005-03-30 | 2012-08-08 | 三菱電機株式会社 | シフトレジスタ回路 |
US7645478B2 (en) * | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
KR101157241B1 (ko) * | 2005-04-11 | 2012-06-15 | 엘지디스플레이 주식회사 | 게이트 드라이버 및 그 구동 방법 |
US8300031B2 (en) * | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
KR101107714B1 (ko) | 2005-04-22 | 2012-01-25 | 엘지디스플레이 주식회사 | 쉬프트 레지스터 및 이의 구동방법 |
CN101694766A (zh) | 2005-05-02 | 2010-04-14 | 株式会社半导体能源研究所 | 发光器件、以及电子器具 |
EP1720148A3 (en) | 2005-05-02 | 2007-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device and gray scale driving method with subframes thereof |
US7324123B2 (en) * | 2005-05-20 | 2008-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic apparatus |
JP5190722B2 (ja) | 2005-05-20 | 2013-04-24 | Nltテクノロジー株式会社 | ブートストラップ回路並びにこれを用いたシフトレジスタ、走査回路及び表示装置 |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) * | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
TWI278183B (en) * | 2005-07-01 | 2007-04-01 | Au Optronics Corp | Shift register and level shifter thereof |
JP3767630B2 (ja) | 2005-07-13 | 2006-04-19 | 株式会社日立製作所 | 液晶表示装置 |
KR100711890B1 (ko) * | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) * | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP5116225B2 (ja) * | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP4280736B2 (ja) * | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP2007073705A (ja) * | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
EP1998375A3 (en) * | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method |
JP5078246B2 (ja) * | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
JP5037808B2 (ja) * | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
US20070206642A1 (en) * | 2005-11-10 | 2007-09-06 | X-Emi, Inc. | Bidirectional active signal management in cables and other interconnects |
KR20090115222A (ko) * | 2005-11-15 | 2009-11-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 제조방법 |
KR101192777B1 (ko) | 2005-12-02 | 2012-10-18 | 엘지디스플레이 주식회사 | 쉬프트 레지스터 |
US7612770B2 (en) * | 2005-12-15 | 2009-11-03 | Tpo Displays Corp. | Systems for displaying images |
TWI292281B (en) * | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
WO2007080813A1 (en) | 2006-01-07 | 2007-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device and electronic device having the same |
JP5164383B2 (ja) * | 2006-01-07 | 2013-03-21 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器 |
US7867636B2 (en) * | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) * | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
TWI325132B (en) | 2006-02-10 | 2010-05-21 | Au Optronics Corp | Shift register capable of self feedback |
US7977169B2 (en) * | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
CA2576588C (en) * | 2006-02-16 | 2011-08-16 | Rohm And Haas Company | Method for generation of hydrogen gas from borohydride |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
JP5079350B2 (ja) | 2006-04-25 | 2012-11-21 | 三菱電機株式会社 | シフトレジスタ回路 |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
TWI338877B (en) | 2006-05-04 | 2011-03-11 | Chi Mei El Corp | A shift register circuit and a pull high element thereof |
US7443202B2 (en) * | 2006-06-02 | 2008-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic apparatus having the same |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
US7832647B2 (en) * | 2006-06-30 | 2010-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101243807B1 (ko) * | 2006-06-30 | 2013-03-18 | 엘지디스플레이 주식회사 | 쉬프트 레지스터 |
JP4609797B2 (ja) * | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4999400B2 (ja) * | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
EP1895545B1 (en) * | 2006-08-31 | 2014-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
JP4332545B2 (ja) * | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP4274219B2 (ja) * | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
JP5468196B2 (ja) * | 2006-09-29 | 2014-04-09 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置及び液晶表示装置 |
JP5116277B2 (ja) * | 2006-09-29 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器 |
TWI514347B (zh) | 2006-09-29 | 2015-12-21 | Semiconductor Energy Lab | 顯示裝置和電子裝置 |
JP4932415B2 (ja) * | 2006-09-29 | 2012-05-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US7622371B2 (en) * | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
JP5525685B2 (ja) | 2006-10-17 | 2014-06-18 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
JP4968671B2 (ja) * | 2006-11-27 | 2012-07-04 | Nltテクノロジー株式会社 | 半導体回路、走査回路、及びそれを用いた表示装置 |
US7772021B2 (en) * | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) * | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) * | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) * | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
JP5090008B2 (ja) * | 2007-02-07 | 2012-12-05 | 三菱電機株式会社 | 半導体装置およびシフトレジスタ回路 |
CN100583295C (zh) * | 2007-02-09 | 2010-01-20 | 群康科技(深圳)有限公司 | 移位寄存器及液晶显示装置 |
KR101337256B1 (ko) | 2007-02-14 | 2013-12-05 | 삼성디스플레이 주식회사 | 표시 장치의 구동 장치 및 이를 포함하는 표시 장치 |
KR100851215B1 (ko) * | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
TWI337003B (en) * | 2007-04-16 | 2011-02-01 | Hannstar Display Corp | Shift register apparatus and shift register thereof |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
CN101663762B (zh) * | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
JP2008281671A (ja) | 2007-05-09 | 2008-11-20 | Sony Corp | 画素回路および表示装置 |
TWI373019B (en) | 2007-05-09 | 2012-09-21 | Chunghwa Picture Tubes Ltd | Shift register and shift register apparatus therein |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
US8354674B2 (en) * | 2007-06-29 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer |
GB2452278A (en) | 2007-08-30 | 2009-03-04 | Sharp Kk | A scan pulse shift register for an active matrix LCD display |
GB2452279A (en) * | 2007-08-30 | 2009-03-04 | Sharp Kk | An LCD scan pulse shift register stage with a gate line driver and a separate logic output buffer |
TWI385626B (zh) | 2007-09-07 | 2013-02-11 | Chimei Innolux Corp | 位移暫存器及液晶顯示器 |
CN101779252B (zh) * | 2007-09-12 | 2013-05-15 | 夏普株式会社 | 移位寄存器 |
CN101388253B (zh) * | 2007-09-14 | 2011-07-27 | 群康科技(深圳)有限公司 | 移位寄存器及液晶显示器 |
US8202365B2 (en) * | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
TWI334144B (en) | 2008-01-09 | 2010-12-01 | Au Optronics Corp | Shift register |
JP2009193981A (ja) | 2008-02-12 | 2009-08-27 | Toyama Prefecture | 半導体集積回路装置 |
JP4835626B2 (ja) | 2008-04-03 | 2011-12-14 | ソニー株式会社 | シフトレジスタ回路、表示パネル及び電子機器 |
JP2009302631A (ja) | 2008-06-10 | 2009-12-24 | Hitachi Ulsi Systems Co Ltd | 半導体集積回路装置 |
US8314765B2 (en) | 2008-06-17 | 2012-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit, display device, and electronic device |
JP2010033690A (ja) | 2008-06-30 | 2010-02-12 | Mitsubishi Electric Corp | シフトレジスタ回路 |
JP4582216B2 (ja) | 2008-07-12 | 2010-11-17 | ソニー株式会社 | 半導体デバイス、表示パネル及び電子機器 |
JP2010045884A (ja) | 2008-08-11 | 2010-02-25 | Meidensha Corp | モータ駆動装置および電流検出方法 |
JP4623179B2 (ja) * | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) * | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
KR101472771B1 (ko) * | 2008-12-01 | 2014-12-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
EP2515337B1 (en) * | 2008-12-24 | 2016-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit and semiconductor device |
US8330702B2 (en) * | 2009-02-12 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Pulse output circuit, display device, and electronic device |
CN101504829B (zh) | 2009-03-23 | 2011-07-27 | 友达光电股份有限公司 | 具有双向稳压功能的液晶显示装置及移位寄存器 |
US20120082287A1 (en) * | 2009-05-20 | 2012-04-05 | Sharp Kabushiki Kaisha | Shift register |
US8559588B2 (en) * | 2009-05-28 | 2013-10-15 | Sharp Kabushiki Kaisha | Shift register |
US8422622B2 (en) * | 2009-06-15 | 2013-04-16 | Sharp Kabushiki Kaisha | Shift register and display device |
US8384461B2 (en) * | 2009-06-15 | 2013-02-26 | Sharp Kabushiki Kaisha | Shift register and display device |
US8921857B2 (en) * | 2009-06-18 | 2014-12-30 | Sharp Kabushiki Kaisha | Semiconductor device |
JP5478165B2 (ja) * | 2009-06-30 | 2014-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9171640B2 (en) * | 2009-10-09 | 2015-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Shift register and display device |
KR101763660B1 (ko) * | 2009-12-18 | 2017-08-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 그 구동 방법 |
KR101389120B1 (ko) * | 2010-03-02 | 2014-04-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 펄스 신호 출력 회로 및 시프트 레지스터 |
KR101706292B1 (ko) * | 2010-03-02 | 2017-02-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 펄스 신호 출력 회로 및 시프트 레지스터 |
KR101838628B1 (ko) * | 2010-03-02 | 2018-03-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 펄스 신호 출력 회로 및 시프트 레지스터 |
JP5766012B2 (ja) * | 2010-05-21 | 2015-08-19 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
KR102190686B1 (ko) * | 2010-05-21 | 2020-12-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 펄스 출력 회로, 시프트 레지스터, 및 표시 장치 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050062515A1 (en) * | 2003-01-17 | 2005-03-24 | Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation | Pulse output circuit, shift register and electronic equipment |
US20040217935A1 (en) * | 2003-04-29 | 2004-11-04 | Jin Jeon | Gate driving circuit and display apparatus having the same |
CN1577028A (zh) * | 2003-07-18 | 2005-02-09 | 株式会社半导体能源研究所 | 显示器 |
CN101221818A (zh) * | 2006-10-03 | 2008-07-16 | 三菱电机株式会社 | 移位寄存器电路以及包括该移位寄存器电路的图像显示装置 |
CN101166023A (zh) * | 2006-10-17 | 2008-04-23 | 株式会社半导体能源研究所 | 脉冲输出电路、移位寄存器、以及显示装置 |
JP2009177296A (ja) * | 2008-01-22 | 2009-08-06 | Seiko Epson Corp | 出力回路、出力方法、出力回路の製造方法、および電子機器 |
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