CN101567367B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN101567367B
CN101567367B CN2009101415364A CN200910141536A CN101567367B CN 101567367 B CN101567367 B CN 101567367B CN 2009101415364 A CN2009101415364 A CN 2009101415364A CN 200910141536 A CN200910141536 A CN 200910141536A CN 101567367 B CN101567367 B CN 101567367B
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Prior art keywords
terminal
semiconductor chip
lead
tabular
chip
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Expired - Fee Related
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CN2009101415364A
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English (en)
Chinese (zh)
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CN101567367A (zh
Inventor
川岛彻也
三岛彰
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NEC Electronics Corp
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Renesas Electronics Corp
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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CN107946257A (zh) * 2016-11-18 2018-04-20 日月光半导体制造股份有限公司 半导体装置及制造其的方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7501702B2 (en) * 2004-06-24 2009-03-10 Fairchild Semiconductor Corporation Integrated transistor module and method of fabricating same
JP2006049341A (ja) * 2004-07-30 2006-02-16 Renesas Technology Corp 半導体装置およびその製造方法
JP2006073655A (ja) * 2004-08-31 2006-03-16 Toshiba Corp 半導体モジュール
JP2007116012A (ja) * 2005-10-24 2007-05-10 Renesas Technology Corp 半導体装置及びそれを用いた電源装置
JP4899481B2 (ja) * 2006-01-10 2012-03-21 サンケン電気株式会社 外部に露出する放熱体を上部に有する樹脂封止型半導体装置の製法
US7868432B2 (en) * 2006-02-13 2011-01-11 Fairchild Semiconductor Corporation Multi-chip module for battery power control
JP4875380B2 (ja) 2006-02-24 2012-02-15 ルネサスエレクトロニクス株式会社 半導体装置
DE102006012781B4 (de) * 2006-03-17 2016-06-16 Infineon Technologies Ag Multichip-Modul mit verbessertem Systemträger und Verfahren zu seiner Herstellung
JP4916745B2 (ja) 2006-03-28 2012-04-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7768075B2 (en) * 2006-04-06 2010-08-03 Fairchild Semiconductor Corporation Semiconductor die packages using thin dies and metal substrates
US7618896B2 (en) 2006-04-24 2009-11-17 Fairchild Semiconductor Corporation Semiconductor die package including multiple dies and a common node structure
DE102006021959B4 (de) * 2006-05-10 2011-12-29 Infineon Technologies Ag Leistungshalbleiterbauteil und Verfahren zu dessen Herstellung
US7663211B2 (en) * 2006-05-19 2010-02-16 Fairchild Semiconductor Corporation Dual side cooling integrated power device package and module with a clip attached to a leadframe in the package and the module and methods of manufacture
TWI452662B (zh) * 2006-05-19 2014-09-11 Fairchild Semiconductor 雙邊冷卻整合電源裝置封裝與模組及製造方法
TW200812066A (en) * 2006-05-30 2008-03-01 Renesas Tech Corp Semiconductor device and power source unit using the same
JP5191689B2 (ja) * 2006-05-30 2013-05-08 ルネサスエレクトロニクス株式会社 半導体装置
JP5165214B2 (ja) * 2006-06-26 2013-03-21 オンセミコンダクター・トレーディング・リミテッド 半導体装置
JP5261636B2 (ja) * 2006-10-27 2013-08-14 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
US20080180921A1 (en) * 2007-01-31 2008-07-31 Cyntec Co., Ltd. Electronic package structure
JP2008218688A (ja) * 2007-03-05 2008-09-18 Denso Corp 半導体装置
US7872350B2 (en) * 2007-04-10 2011-01-18 Qimonda Ag Multi-chip module
JP5272191B2 (ja) * 2007-08-31 2013-08-28 三菱電機株式会社 半導体装置および半導体装置の製造方法
US8067825B2 (en) * 2007-09-28 2011-11-29 Stats Chippac Ltd. Integrated circuit package system with multiple die
US7800219B2 (en) * 2008-01-02 2010-09-21 Fairchild Semiconductor Corporation High-power semiconductor die packages with integrated heat-sink capability and methods of manufacturing the same
US8642394B2 (en) 2008-01-28 2014-02-04 Infineon Technologies Ag Method of manufacturing electronic device on leadframe
JP2009200338A (ja) * 2008-02-22 2009-09-03 Renesas Technology Corp 半導体装置の製造方法
US8507320B2 (en) * 2008-03-18 2013-08-13 Infineon Technologies Ag Electronic device including a carrier and a semiconductor chip attached to the carrier and manufacturing thereof
US8138587B2 (en) * 2008-09-30 2012-03-20 Infineon Technologies Ag Device including two mounting surfaces
US7898067B2 (en) * 2008-10-31 2011-03-01 Fairchild Semiconductor Corporaton Pre-molded, clip-bonded multi-die semiconductor package
WO2010113120A1 (en) * 2009-04-02 2010-10-07 Koninklijke Philips Electronics N.V. An integrated circuit system with a thermally isolating frame construction and method for producing such integrated circuit system
JP2010258366A (ja) * 2009-04-28 2010-11-11 Renesas Electronics Corp 半導体装置
JP2011023587A (ja) * 2009-07-16 2011-02-03 Shinko Electric Ind Co Ltd 半導体装置
JP5678884B2 (ja) 2009-08-03 2015-03-04 株式会社安川電機 電力変換装置
US20110075392A1 (en) 2009-09-29 2011-03-31 Astec International Limited Assemblies and Methods for Directly Connecting Integrated Circuits to Electrically Conductive Sheets
JP5126278B2 (ja) * 2010-02-04 2013-01-23 株式会社デンソー 半導体装置およびその製造方法
JP2011187809A (ja) 2010-03-10 2011-09-22 Renesas Electronics Corp 半導体装置および多層配線基板
JP5655339B2 (ja) * 2010-03-26 2015-01-21 サンケン電気株式会社 半導体装置
JP5099243B2 (ja) * 2010-04-14 2012-12-19 株式会社デンソー 半導体モジュール
CN103996628A (zh) * 2010-04-16 2014-08-20 万国半导体有限公司 双引线框架多芯片共同封装体的制造方法
JP5253455B2 (ja) * 2010-06-01 2013-07-31 三菱電機株式会社 パワー半導体装置
DE102010030838A1 (de) * 2010-07-02 2012-01-05 Robert Bosch Gmbh Halbleiterbauteil mit verbesserter Wärmeabfuhr
JP5709299B2 (ja) 2010-09-29 2015-04-30 ローム株式会社 半導体パワーモジュールおよびその製造方法
US8587101B2 (en) 2010-12-13 2013-11-19 International Rectifier Corporation Multi-chip module (MCM) power quad flat no-lead (PQFN) semiconductor package utilizing a leadframe for electrical interconnections
US9620954B2 (en) 2010-12-13 2017-04-11 Infineon Technologies Americas Corp. Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
US9711437B2 (en) 2010-12-13 2017-07-18 Infineon Technologies Americas Corp. Semiconductor package having multi-phase power inverter with internal temperature sensor
US9659845B2 (en) 2010-12-13 2017-05-23 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package in a single shunt inverter circuit
US8664754B2 (en) * 2011-01-03 2014-03-04 International Rectifier Corporation High power semiconductor package with multiple conductive clips
CN102593108B (zh) * 2011-01-18 2014-08-20 台达电子工业股份有限公司 功率半导体封装结构及其制造方法
US20120200281A1 (en) * 2011-02-07 2012-08-09 Texas Instruments Incorporated Three-Dimensional Power Supply Module Having Reduced Switch Node Ringing
JP5936310B2 (ja) * 2011-03-17 2016-06-22 三菱電機株式会社 パワー半導体モジュール及びその取り付け構造
JP5821949B2 (ja) * 2011-04-18 2015-11-24 三菱電機株式会社 半導体装置及びこれを備えたインバータ装置、並びにこれらを備えた車両用回転電機
JP5947537B2 (ja) * 2011-04-19 2016-07-06 トヨタ自動車株式会社 半導体装置及びその製造方法
JP5431406B2 (ja) * 2011-04-22 2014-03-05 ルネサスエレクトロニクス株式会社 半導体装置
JP5254398B2 (ja) * 2011-04-22 2013-08-07 ルネサスエレクトロニクス株式会社 半導体装置
US8614503B2 (en) * 2011-05-19 2013-12-24 International Rectifier Corporation Common drain exposed conductive clip for high power semiconductor packages
US8531016B2 (en) * 2011-05-19 2013-09-10 International Rectifier Corporation Thermally enhanced semiconductor package with exposed parallel conductive clip
US8344464B2 (en) * 2011-05-19 2013-01-01 International Rectifier Corporation Multi-transistor exposed conductive clip for high power semiconductor packages
CN103503132B (zh) * 2011-06-09 2016-06-01 三菱电机株式会社 半导体装置
US8723311B2 (en) * 2011-06-30 2014-05-13 Stmicroelectronics S.R.L. Half-bridge electronic device with common heat sink on mounting surface
ITMI20111208A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Sistema con dissipatore di calore stabilizzato
ITMI20111213A1 (it) * 2011-06-30 2012-12-31 St Microelectronics Srl Dispositivo elettronico a semi-ponte con dissipatore di calore ausiliario comune
ITMI20111219A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Sistema con dissipatore di calore condiviso
ITMI20111214A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Dispositivo di potenza a spessore ridotto
ITMI20111216A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Dispositivo elettronico di potenza ad elevata dissipazione di calore e stabilita?
ITMI20111218A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Dispositivo di potenza ad elevata velocita? di commutazione
ITMI20111217A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Sistema contenitore/dissipatore per componente elettronico
US10163877B2 (en) * 2011-11-07 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. System in package process flow
US9881898B2 (en) * 2011-11-07 2018-01-30 Taiwan Semiconductor Manufacturing Co.,Ltd. System in package process flow
DE102011088250A1 (de) * 2011-12-12 2013-06-13 Robert Bosch Gmbh Leistungsmodul für einen elektrischen Antrieb
DE102011089740B4 (de) * 2011-12-23 2017-01-19 Conti Temic Microelectronic Gmbh Leistungsmodul
JP5787784B2 (ja) 2012-02-15 2015-09-30 ルネサスエレクトロニクス株式会社 半導体装置
US8847385B2 (en) * 2012-03-27 2014-09-30 Infineon Technologies Ag Chip arrangement, a method for forming a chip arrangement, a chip package, a method for forming a chip package
US8916968B2 (en) 2012-03-27 2014-12-23 Infineon Technologies Ag Multichip power semiconductor device
US9589872B2 (en) * 2012-03-28 2017-03-07 Infineon Technologies Americas Corp. Integrated dual power converter package having internal driver IC
JP5924110B2 (ja) * 2012-05-11 2016-05-25 株式会社ソシオネクスト 半導体装置、半導体装置モジュールおよび半導体装置の製造方法
US9437508B2 (en) 2012-05-15 2016-09-06 Panasonic Intellectual Property Management Co., Ltd. Method for manufacturing semiconductor device and semiconductor device
JP5924164B2 (ja) * 2012-07-06 2016-05-25 株式会社豊田自動織機 半導体装置
US9018744B2 (en) * 2012-09-25 2015-04-28 Infineon Technologies Ag Semiconductor device having a clip contact
JP5970316B2 (ja) * 2012-09-26 2016-08-17 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6165525B2 (ja) * 2012-10-31 2017-07-19 株式会社東芝 半導体電力変換装置およびその製造方法
US9171837B2 (en) 2012-12-17 2015-10-27 Nxp B.V. Cascode circuit
JP5487290B2 (ja) * 2012-12-21 2014-05-07 ルネサスエレクトロニクス株式会社 半導体装置
JP5966921B2 (ja) * 2012-12-28 2016-08-10 トヨタ自動車株式会社 半導体モジュールの製造方法
KR101984831B1 (ko) 2013-01-31 2019-05-31 삼성전자 주식회사 반도체 패키지 및 그 제조 방법
JP5493021B2 (ja) * 2013-03-08 2014-05-14 ルネサスエレクトロニクス株式会社 半導体装置
JP5966979B2 (ja) * 2013-03-14 2016-08-10 株式会社デンソー 半導体装置及びその製造方法
US9041170B2 (en) 2013-04-02 2015-05-26 Infineon Technologies Austria Ag Multi-level semiconductor package
WO2014202282A1 (de) * 2013-06-20 2014-12-24 Conti Temic Microelectronic Gmbh Leiterplatte
DE102013217802B4 (de) * 2013-09-05 2020-01-09 Infineon Technologies Ag Halbleiteranordnung, verfahren zur herstellung einer halbleiteranordnung und verfahren zum betrieb einer halbleiteranordnung
JP2015056563A (ja) * 2013-09-12 2015-03-23 株式会社東芝 半導体装置およびその製造方法
US10109592B2 (en) * 2013-11-26 2018-10-23 Infineon Technologies Ag Semiconductor chip with electrically conducting layer
CN107680950B (zh) * 2013-11-27 2020-04-07 万国半导体股份有限公司 一种多芯片叠层的封装结构及其封装方法
US9704787B2 (en) * 2014-10-16 2017-07-11 Infineon Technologies Americas Corp. Compact single-die power semiconductor package
US9437516B2 (en) * 2014-01-07 2016-09-06 Infineon Technologies Austria Ag Chip-embedded packages with backside die connection
US9837380B2 (en) 2014-01-28 2017-12-05 Infineon Technologies Austria Ag Semiconductor device having multiple contact clips
JP6228490B2 (ja) * 2014-03-04 2017-11-08 ローム株式会社 半導体装置および半導体装置の製造方法
KR101555301B1 (ko) * 2014-05-13 2015-09-23 페어차일드코리아반도체 주식회사 반도체 패키지
US9431327B2 (en) * 2014-05-30 2016-08-30 Delta Electronics, Inc. Semiconductor device
DE102014114933B4 (de) 2014-10-15 2021-08-12 Infineon Technologies Austria Ag Halbleiterbauelement
JP6152842B2 (ja) * 2014-11-04 2017-06-28 トヨタ自動車株式会社 半導体装置とその製造方法
US9780018B2 (en) * 2014-12-16 2017-10-03 Infineon Technologies Americas Corp. Power semiconductor package having reduced form factor and increased current carrying capability
CN105633051A (zh) * 2015-12-24 2016-06-01 江苏长电科技股份有限公司 部分框架外露多芯片多搭平铺夹芯封装结构及其工艺方法
CN105551982A (zh) * 2015-12-24 2016-05-04 江苏长电科技股份有限公司 一种多芯片正装平铺夹芯封装结构及其工艺方法
CN105609425A (zh) * 2015-12-24 2016-05-25 江苏长电科技股份有限公司 部分框架外露多芯片单搭平铺夹芯封装结构及其工艺方法
CN105448880A (zh) * 2015-12-24 2016-03-30 江苏长电科技股份有限公司 一种多芯片单搭平铺夹芯封装结构及其工艺方法
CN105448881A (zh) * 2015-12-24 2016-03-30 江苏长电科技股份有限公司 一种框架外露多芯片多搭平铺夹芯封装结构及其工艺方法
CN105448882A (zh) * 2015-12-24 2016-03-30 江苏长电科技股份有限公司 一种框架外露多芯片单搭平铺夹芯封装结构及其工艺方法
CN105405833A (zh) * 2015-12-24 2016-03-16 江苏长电科技股份有限公司 一种多芯片多搭平铺夹芯封装结构及其工艺方法
CN105405832A (zh) * 2015-12-24 2016-03-16 江苏长电科技股份有限公司 部分框架外露多芯片平铺夹芯封装结构及其工艺方法
CN105405831A (zh) * 2015-12-24 2016-03-16 江苏长电科技股份有限公司 一种框架外露多芯片正装平铺夹芯封装结构及其工艺方法
DE102016107792B4 (de) * 2016-04-27 2022-01-27 Infineon Technologies Ag Packung und halbfertiges Produkt mit vertikaler Verbindung zwischen Träger und Klammer sowie Verfahren zum Herstellen einer Packung und einer Charge von Packungen
JP7153649B2 (ja) * 2016-12-16 2022-10-14 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト ゲートパスインダクタンスが低いパワー半導体モジュール
DE102017202345A1 (de) 2017-02-14 2018-08-16 Infineon Technologies Ag Leiterrahmen, halbleitergehäuse, das einen leiterrahmen umfasst, und verfahren zum bilden eines halbleitergehäuses
CN110383691B (zh) * 2017-03-15 2023-08-15 Abb瑞士股份有限公司 固态开关设备
US10262928B2 (en) * 2017-03-23 2019-04-16 Rohm Co., Ltd. Semiconductor device
CN110462825B (zh) * 2017-03-29 2023-07-11 日本电产株式会社 半导体封装装置及其制造方法
DE102017107327B4 (de) 2017-04-05 2024-03-21 Infineon Technologies Austria Ag Feldeffekt-Halbleiterbauelement und Verfahren zu dessen Herstellung
US10727151B2 (en) * 2017-05-25 2020-07-28 Infineon Technologies Ag Semiconductor chip package having a cooling surface and method of manufacturing a semiconductor package
KR102153159B1 (ko) * 2017-06-12 2020-09-08 매그나칩 반도체 유한회사 전력 반도체의 멀티칩 패키지
DE102017127089B4 (de) 2017-11-17 2022-05-25 Infineon Technologies Austria Ag Multi-Die-Gehäuse und Leistungswandler
JP7131903B2 (ja) * 2017-12-08 2022-09-06 ローム株式会社 半導体パッケージ
US10784213B2 (en) 2018-01-26 2020-09-22 Hong Kong Applied Science and Technology Research Institute Company Limited Power device package
US11776937B2 (en) 2018-07-04 2023-10-03 Shindengen Electric Manufacturing Co., Ltd. Electronic module
JP7119666B2 (ja) * 2018-07-09 2022-08-17 株式会社アイシン スイッチング素子ユニット及びスイッチング素子モジュール
WO2020032871A1 (en) * 2018-08-08 2020-02-13 Agency For Science, Technology And Research Semiconductor package and method of forming the same
US20200194347A1 (en) * 2018-12-18 2020-06-18 Alpha And Omega Semiconductor (Cayman) Ltd. Semiconductor package and method of making the same
US11316438B2 (en) 2019-01-07 2022-04-26 Delta Eletronics (Shanghai) Co., Ltd. Power supply module and manufacture method for same
US11676756B2 (en) 2019-01-07 2023-06-13 Delta Electronics (Shanghai) Co., Ltd. Coupled inductor and power supply module
CN111415909B (zh) * 2019-01-07 2022-08-05 台达电子企业管理（上海）有限公司 多芯片封装功率模块
CN111415908B (zh) 2019-01-07 2022-02-22 台达电子企业管理（上海）有限公司 电源模块、芯片嵌入式封装模块及制备方法
CN110349940B (zh) * 2019-06-27 2020-11-17 深圳第三代半导体研究院 一种芯片封装结构及其制作方法
CN110676235A (zh) * 2019-10-25 2020-01-10 成都赛力康电气有限公司 一种便于扩展的新型功率mos模组结构
JP7416638B2 (ja) * 2020-02-05 2024-01-17 ローム株式会社 半導体装置および半導体装置の製造方法
TWI727861B (zh) * 2020-07-23 2021-05-11 朋程科技股份有限公司 晶片封裝結構及其製造方法
JP7337034B2 (ja) * 2020-09-15 2023-09-01 三菱電機株式会社 半導体パッケージおよび半導体装置
CN113345871B (zh) * 2021-04-25 2022-09-13 华中科技大学 一种低寄生电感串联功率模块
CN116884932A (zh) * 2023-09-06 2023-10-13 深圳智芯微电子科技有限公司 芯片封装结构

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020179289A1 (en) * 2001-05-31 2002-12-05 Matsushita Electric Industrial Co., Ltd. Power module and method of manufacturing the same
US20020195704A1 (en) * 2001-06-21 2002-12-26 Vincent Chan Multi-die module and method thereof
US20030132530A1 (en) * 1999-11-24 2003-07-17 Takanori Teshima Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3129020B2 (ja) 1992-04-09 2001-01-29 富士電機株式会社 半導体装置
JP2894089B2 (ja) 1992-06-19 1999-05-24 竹内精工株式会社 直線運動用ベアリング
KR20000057810A (ko) * 1999-01-28 2000-09-25 가나이 쓰토무 반도체 장치
KR100335481B1 (ko) * 1999-09-13 2002-05-04 김덕중 멀티 칩 패키지 구조의 전력소자
US6703707B1 (en) * 1999-11-24 2004-03-09 Denso Corporation Semiconductor device having radiation structure
JP3601432B2 (ja) 2000-10-04 2004-12-15 株式会社デンソー 半導体装置
JP2001291823A (ja) 2000-04-05 2001-10-19 Toshiba Digital Media Engineering Corp 半導体装置
JP4774581B2 (ja) 2000-06-30 2011-09-14 株式会社デンソー 冷却流体冷却型半導体装置
EP2234154B1 (en) 2000-04-19 2016-03-30 Denso Corporation Coolant cooled type semiconductor device
JP4423746B2 (ja) 2000-05-10 2010-03-03 株式会社デンソー 冷媒冷却型両面冷却半導体装置
JP3578335B2 (ja) 2000-06-29 2004-10-20 株式会社デンソー 電力用半導体装置
JP4192396B2 (ja) 2000-04-19 2008-12-10 株式会社デンソー 半導体スイッチングモジュ−ル及びそれを用いた半導体装置
JP4292686B2 (ja) 2000-06-08 2009-07-08 株式会社デンソー 冷媒冷却型両面冷却半導体装置
US6545364B2 (en) * 2000-09-04 2003-04-08 Sanyo Electric Co., Ltd. Circuit device and method of manufacturing the same
JP4479121B2 (ja) * 2001-04-25 2010-06-09 株式会社デンソー 半導体装置の製造方法
JP2003046036A (ja) 2001-08-01 2003-02-14 Denso Corp 半導体装置
JP3627738B2 (ja) * 2001-12-27 2005-03-09 株式会社デンソー 半導体装置
US6946740B2 (en) 2002-07-15 2005-09-20 International Rectifier Corporation High power MCM package
JP4294405B2 (ja) * 2003-07-31 2009-07-15 株式会社ルネサステクノロジ 半導体装置
JP3809168B2 (ja) * 2004-02-03 2006-08-16 株式会社東芝 半導体モジュール
DE102004047358B3 (de) * 2004-09-29 2005-11-03 Infineon Technologies Ag In zwei Halbleiterkörpern integrierte Schaltungsanordnung mit einem Leistungsbauelement und einer Ansteuerschaltung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030132530A1 (en) * 1999-11-24 2003-07-17 Takanori Teshima Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure
US20020179289A1 (en) * 2001-05-31 2002-12-05 Matsushita Electric Industrial Co., Ltd. Power module and method of manufacturing the same
US20020195704A1 (en) * 2001-06-21 2002-12-26 Vincent Chan Multi-die module and method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104332463A (zh) * 2013-07-12 2015-02-04 英飞凌科技奥地利有限公司 多芯片器件
CN104332463B (zh) * 2013-07-12 2017-07-18 英飞凌科技奥地利有限公司 多芯片器件
CN107946257A (zh) * 2016-11-18 2018-04-20 日月光半导体制造股份有限公司 半导体装置及制造其的方法

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KR20120008480A (ko) 2012-01-30
KR20050077759A (ko) 2005-08-03
US7145224B2 (en) 2006-12-05
KR101100838B1 (ko) 2012-01-02
JP2005217072A (ja) 2005-08-11
KR101127195B1 (ko) 2012-03-29
KR20100028606A (ko) 2010-03-12
USRE41869E1 (en) 2010-10-26
KR101168973B1 (ko) 2012-07-27
CN100521196C (zh) 2009-07-29
KR101127199B1 (ko) 2012-03-29
CN101567367A (zh) 2009-10-28
USRE43663E1 (en) 2012-09-18
CN1649146A (zh) 2005-08-03
KR20100028605A (ko) 2010-03-12

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