JP5966921B2 - 半導体モジュールの製造方法 - Google Patents
半導体モジュールの製造方法 Download PDFInfo
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- JP5966921B2 JP5966921B2 JP2012287305A JP2012287305A JP5966921B2 JP 5966921 B2 JP5966921 B2 JP 5966921B2 JP 2012287305 A JP2012287305 A JP 2012287305A JP 2012287305 A JP2012287305 A JP 2012287305A JP 5966921 B2 JP5966921 B2 JP 5966921B2
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Description
3:第1表面電極
4:第2表面電極
5:制御パッド
6:樹脂
7、7a、7b:半田材
7c:高温溶融半田材
7d:低温溶融半田材
9:ボンディングワイヤ
10、10a、10b、10c、10d、10e、10f:半導体モジュール
12:積層ユニット
13a:出力電極
13b:第1電極
13c:第2電極
14:制御電極
15:冷却プレート
41:ボンディングツール
80:カーボン治具
Claims (1)
- 平板型の第1及び第2半導体チップが樹脂で封止されているとともに、樹脂内部にて、いずれかの半導体チップと電気的に接続している第1電極と第2電極と出力電極と第1制御電極と第2制御電極が樹脂から露出している半導体モジュールの製造方法であって、
夫々の半導体チップは、第1面に第1表面電極と制御パッドが露出しているとともに、第1面とは反対側の第2面に第2表面電極が露出しており、
樹脂内にて、前記第1電極、前記第1半導体チップ、前記出力電極、前記第2半導体チップ、及び、前記第2電極がこの順序で積層しており、
前記第1電極と前記第1半導体チップの前記第1表面電極が対向するとともに電気的に接続し、前記第1半導体チップの前記第2表面電極が前記出力電極と対向するとともに電気的に接続し、前記第2半導体チップの前記第1表面電極が前記出力電極と対向するとともに電気的に接続し、前記第2半導体チップの前記第2表面電極と前記第2電極が対向するとともに電気的に接続しており、
前記第1制御電極が前記第1半導体チップの制御パッドにボンディングワイヤを介して電気的に接続しており、前記第2制御電極が前記第2半導体チップの制御パッドにボンディングワイヤを介して電気的に接続しており、
前記第1及び第2電極、前記出力電極、前記第1及び第2制御電極のうち、前記第1半導体チップの制御パッドが向いている側に位置する電極が、積層方向から見て前記第1半導体チップの制御パッドと重ならないように配置されており、
前記第1及び第2電極、前記出力電極、前記第1及び第2制御電極のうち、前記第2半導体チップの制御パッドが向いている側に位置する電極が、積層方向から見て前記第2半導体チップの制御パッドと重ならないように配置されており、
当該製造方法は、
前記第1電極、前記第1半導体チップ、前記出力電極、前記第2半導体チップ、前記第2電極を、間に半田材を挟んで上からこの順序で鉛直方向に重ねて積層体を作る工程と、
前記積層体を加熱して前記半田材を溶融させる工程と、
前記積層体を冷却して前記半田材を固着させる工程と、を備えるとともに、
前記積層体を作る工程に先立って、前記第1電極と前記出力電極の少なくとも一方の電極と、重ねたときに前記少なくとも一方の電極の直下に位置する半田材を、当該少なくとも一方の電極を裏返した上から接合させるプレ接合工程と、
を備えていることを特徴とする半導体モジュールの製造方法。
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6409733B2 (ja) * | 2015-10-16 | 2018-10-24 | トヨタ自動車株式会社 | 半導体装置 |
JPWO2017175686A1 (ja) * | 2016-04-04 | 2019-02-14 | ローム株式会社 | パワーモジュールおよびその製造方法 |
JP7139881B2 (ja) * | 2018-02-16 | 2022-09-21 | 株式会社デンソー | 半導体装置 |
CN110164858B (zh) * | 2018-02-16 | 2023-05-05 | 株式会社电装 | 半导体器件 |
US11881524B2 (en) | 2019-03-12 | 2024-01-23 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
JP7172847B2 (ja) * | 2019-05-15 | 2022-11-16 | 株式会社デンソー | 半導体装置 |
JP7518789B2 (ja) | 2021-03-17 | 2024-07-18 | 株式会社東芝 | 半導体装置 |
CN118251766A (zh) * | 2021-11-16 | 2024-06-25 | 罗姆股份有限公司 | 半导体装置 |
WO2023188016A1 (ja) * | 2022-03-29 | 2023-10-05 | 三菱電機株式会社 | 半導体モジュールおよび電力変換装置 |
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JP4323299B2 (ja) * | 2003-12-03 | 2009-09-02 | 三菱電機株式会社 | 半導体装置 |
JP2005217072A (ja) * | 2004-01-28 | 2005-08-11 | Renesas Technology Corp | 半導体装置 |
JP4438489B2 (ja) * | 2004-04-13 | 2010-03-24 | 富士電機システムズ株式会社 | 半導体装置 |
JP4924920B2 (ja) * | 2006-06-28 | 2012-04-25 | 三菱マテリアル株式会社 | Au−Sn合金はんだペーストを用いて素子の接合面全面を基板に接合する方法 |
US7999369B2 (en) * | 2006-08-29 | 2011-08-16 | Denso Corporation | Power electronic package having two substrates with multiple semiconductor chips and electronic components |
JP4985009B2 (ja) * | 2007-03-20 | 2012-07-25 | トヨタ自動車株式会社 | 半導体装置とその半導体装置をパッケージする方法 |
JP5136343B2 (ja) * | 2008-10-02 | 2013-02-06 | 三菱電機株式会社 | 半導体装置 |
JP5271861B2 (ja) * | 2009-10-07 | 2013-08-21 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
CN102593108B (zh) * | 2011-01-18 | 2014-08-20 | 台达电子工业股份有限公司 | 功率半导体封装结构及其制造方法 |
US20120200281A1 (en) * | 2011-02-07 | 2012-08-09 | Texas Instruments Incorporated | Three-Dimensional Power Supply Module Having Reduced Switch Node Ringing |
JP5578326B2 (ja) * | 2011-03-29 | 2014-08-27 | 日立金属株式会社 | リード部品及びその製造方法、並びに半導体パッケージ |
CN103534805B (zh) * | 2011-05-16 | 2016-08-24 | 丰田自动车株式会社 | 功率模块 |
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