ITMI20111218A1 - Dispositivo di potenza ad elevata velocita? di commutazione - Google Patents

Dispositivo di potenza ad elevata velocita? di commutazione

Info

Publication number
ITMI20111218A1
ITMI20111218A1 ITMI20111218A ITMI20111218A1 IT MI20111218 A1 ITMI20111218 A1 IT MI20111218A1 IT MI20111218 A ITMI20111218 A IT MI20111218A IT MI20111218 A1 ITMI20111218 A1 IT MI20111218A1
Authority
IT
Italy
Prior art keywords
switching
speed power
speed
power
Prior art date
Application number
Other languages
English (en)
Inventor
Cristiano Gianluca Stella
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITMI20111218 priority Critical patent/ITMI20111218A1/it
Publication of ITMI20111218A1 publication Critical patent/ITMI20111218A1/it

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49562Geometry of the lead-frame for devices being provided for in H01L29/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334Auxiliary members in encapsulations
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49568Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301Thyristor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13062Junction field-effect transistor [JFET]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
ITMI20111218 2011-06-30 2011-06-30 Dispositivo di potenza ad elevata velocita? di commutazione ITMI20111218A1 (it)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ITMI20111218 ITMI20111218A1 (it) 2011-06-30 2011-06-30 Dispositivo di potenza ad elevata velocita? di commutazione

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ITMI20111218 ITMI20111218A1 (it) 2011-06-30 2011-06-30 Dispositivo di potenza ad elevata velocita? di commutazione
US13/534,832 US8860192B2 (en) 2011-06-30 2012-06-27 Power device having high switching speed

Publications (1)

Publication Number Publication Date
ITMI20111218A1 true ITMI20111218A1 (it) 2012-12-31

Family

ID=44543633

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI20111218 ITMI20111218A1 (it) 2011-06-30 2011-06-30 Dispositivo di potenza ad elevata velocita? di commutazione

Country Status (2)

Country Link
US (1) US8860192B2 (it)
IT (1) ITMI20111218A1 (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015039283A (ja) * 2013-04-02 2015-02-26 アスモ株式会社 回転電機

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150254A (en) * 1995-06-29 2000-11-21 Rohm Co., Ltd Method for wiring of a semiconductor device
WO2006058030A2 (en) * 2004-11-23 2006-06-01 Siliconix Incorporated Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleys
US20070090523A1 (en) * 2005-10-20 2007-04-26 Ralf Otremba Semiconductor component and methods to produce a semiconductor component
US20070108564A1 (en) * 2005-03-30 2007-05-17 Wai Kwong Tang Thermally enhanced power semiconductor package system
US20110096509A1 (en) * 2007-08-07 2011-04-28 Rohm Co., Ltd. High efficiency module

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US4147889A (en) 1978-02-28 1979-04-03 Amp Incorporated Chip carrier
US4611238A (en) 1982-05-05 1986-09-09 Burroughs Corporation Integrated circuit package incorporating low-stress omnidirectional heat sink
JPS58218149A (en) 1982-05-21 1983-12-19 Nec Home Electronics Ltd Lead frame for diode sealed with resin
JPS62104056A (en) 1985-07-08 1987-05-14 Nec Corp Mounting structure for semiconductor part
US4748538A (en) 1985-07-08 1988-05-31 Nec Corporation Semiconductor module
US4918571A (en) 1987-03-31 1990-04-17 Amp Incorporated Chip carrier with energy storage means
JPH04368155A (en) 1991-06-17 1992-12-21 Hitachi Ltd Semiconductor device and electronic apparatus
JPH0637217A (ja) 1992-07-15 1994-02-10 Hitachi Ltd 半導体装置
US5311395A (en) 1992-10-29 1994-05-10 Ncr Corporation Surface mount heat sink
JPH0878584A (ja) 1994-09-06 1996-03-22 Hitachi Ltd 電子パッケージ
US5504652A (en) 1994-09-16 1996-04-02 Apple Computer, Inc. Unitary heat sink for integrated circuits
IT1285396B1 (it) 1996-06-04 1998-06-03 Magneti Marelli Spa Dispositivo dissipatore per circuiti integrati.
US5977630A (en) 1997-08-15 1999-11-02 International Rectifier Corp. Plural semiconductor die housed in common package with split heat sink
JPH11204679A (ja) 1998-01-08 1999-07-30 Mitsubishi Electric Corp 半導体装置
EP0948047A3 (en) 1998-03-20 1999-12-22 Caesar Technology Inc. Electronic component cooling arrangement
US6707676B1 (en) 2002-08-30 2004-03-16 Ehood Geva Heat sink for automatic assembling
US6833997B1 (en) 2003-05-27 2004-12-21 Yazaki North America, Inc. Combination terminal/leadframe for heat sinking and electrical contacts
JP3102658U (ja) 2004-01-05 2004-07-15 船井電機株式会社 ヒートシンク
JP2005217072A (ja) 2004-01-28 2005-08-11 Renesas Technology Corp 半導体装置
US7119433B2 (en) 2004-06-16 2006-10-10 International Business Machines Corporation Packaging for enhanced thermal and structural performance of electronic chip modules
JP4338620B2 (ja) 2004-11-01 2009-10-07 三菱電機株式会社 半導体装置及びその製造方法
US8481368B2 (en) 2008-03-31 2013-07-09 Alpha & Omega Semiconductor, Inc. Semiconductor package of a flipped MOSFET and its manufacturing method
US8018056B2 (en) 2005-12-21 2011-09-13 International Rectifier Corporation Package for high power density devices
US7598603B2 (en) * 2006-03-15 2009-10-06 Infineon Technologies Ag Electronic component having a power switch with an anode thereof mounted on a die attach region of a heat sink
AT503705B1 (de) 2006-05-16 2008-05-15 Siemens Ag Oesterreich Anordnung zur kühlung von smd-leistungsbauelementen auf einer leiterplatte
JP5390064B2 (ja) 2006-08-30 2014-01-15 ルネサスエレクトロニクス株式会社 半導体装置
JP5252819B2 (ja) 2007-03-26 2013-07-31 三菱電機株式会社 半導体装置およびその製造方法
US7851908B2 (en) 2007-06-27 2010-12-14 Infineon Technologies Ag Semiconductor device
US20090236732A1 (en) 2008-03-19 2009-09-24 Powertech Technology Inc. Thermally-enhanced multi-hole semiconductor package
US8358017B2 (en) 2008-05-15 2013-01-22 Gem Services, Inc. Semiconductor package featuring flip-chip die sandwiched between metal layers
US20090323288A1 (en) 2008-06-30 2009-12-31 Bernard Marc R Heat sink slack storage and adaptive operation
US7776658B2 (en) 2008-08-07 2010-08-17 Alpha And Omega Semiconductor, Inc. Compact co-packaged semiconductor dies with elevation-adaptive interconnection plates
US8062932B2 (en) 2008-12-01 2011-11-22 Alpha & Omega Semiconductor, Inc. Compact semiconductor package with integrated bypass capacitor and method
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US8154108B2 (en) 2010-03-29 2012-04-10 Alpha And Omega Semiconductor Incorporated Dual-leadframe multi-chip package and method of manufacture
ITMI20111219A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Sistema con dissipatore di calore condiviso
ITMI20111217A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Sistema contenitore/dissipatore per componente elettronico
ITMI20111216A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Dispositivo elettronico di potenza ad elevata dissipazione di calore e stabilita?
US8723311B2 (en) 2011-06-30 2014-05-13 Stmicroelectronics S.R.L. Half-bridge electronic device with common heat sink on mounting surface

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150254A (en) * 1995-06-29 2000-11-21 Rohm Co., Ltd Method for wiring of a semiconductor device
WO2006058030A2 (en) * 2004-11-23 2006-06-01 Siliconix Incorporated Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleys
US20070108564A1 (en) * 2005-03-30 2007-05-17 Wai Kwong Tang Thermally enhanced power semiconductor package system
US20070090523A1 (en) * 2005-10-20 2007-04-26 Ralf Otremba Semiconductor component and methods to produce a semiconductor component
US20110096509A1 (en) * 2007-08-07 2011-04-28 Rohm Co., Ltd. High efficiency module

Also Published As

Publication number Publication date
US20130001763A1 (en) 2013-01-03
US8860192B2 (en) 2014-10-14

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