CN101454882B - 具有集成肖特基二极管的高密度沟槽fet及制造方法 - Google Patents

具有集成肖特基二极管的高密度沟槽fet及制造方法 Download PDF

Info

Publication number
CN101454882B
CN101454882B CN2007800190574A CN200780019057A CN101454882B CN 101454882 B CN101454882 B CN 101454882B CN 2007800190574 A CN2007800190574 A CN 2007800190574A CN 200780019057 A CN200780019057 A CN 200780019057A CN 101454882 B CN101454882 B CN 101454882B
Authority
CN
China
Prior art keywords
silicon layer
area
groove
silicon
tagmas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2007800190574A
Other languages
English (en)
Other versions
CN101454882A (zh
Inventor
保尔·托鲁普
阿肖克·沙拉
布鲁斯·道格拉斯·马钱特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Publication of CN101454882A publication Critical patent/CN101454882A/zh
Application granted granted Critical
Publication of CN101454882B publication Critical patent/CN101454882B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7806—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

本发明提供了一种单块集成的沟槽FET及肖特基二极管，其包括终止于第一导电型的第一硅区中的一对沟槽。由第一导电型的第二硅区隔开的第二导电型的两个本体区位于这对沟槽之间。第一导电型的源极区位于每个本体区上方。接触开口在这对沟槽之间延伸至该源极区下方一定深度。互连层填充了该接触开口，从而电接触源极区及第二硅区。在互连层电接触第二硅区的地方形成了肖特基接触。

Description

具有集成肖特基二极管的高密度沟槽FET及制造方法
相关申请交叉参考
本申请涉及2004年12月29日提交的第11/026,276号共同转让的美国申请，其全部公开内容结合于此作为参考。
技术领域
本发明大体上涉及半导体功率器件技术，且具体地涉及用于形成单块集成的沟槽栅极场效应晶体管(FET)及肖特基二极管的结构及方法。
背景技术
在当今的电子器件中，经常可以发现使用多重供电的领域。例如，在一些应用中，中央处理单元被设计成在特定时刻依据计算负载而具有不同供给电压的方式来工作。因此，直流/直流变流器在电子工业中激增，以满足电路的宽范围供电需求。普通直流/直流变流器采用典型地通过功率MOSFET(金属氧化物半导体场效应晶体管)实现的高效开关。该电源开关受控制，以利用诸如脉宽调制(PWM)方法将调节后的能量总量传递至负载。
图1示出了传统直流/直流变流器的电路示意图。PWM控制器100驱动功率MOSFET对Q1及Q2的栅极端子，以便对将电荷传递至负载进行调节。MOSFET开关Q2作为同步整流器用在电路中。为了避免急通(shoot-through)电流，在其中一个开关接通之前，两个开关必须同时断开。在该“死时间”(dead time)期间，每个MOSFET开关的内部二极管(通常被称为主体二极管)能够传导电流。不利地，该主体二极管具有相对高的正向电压并且能量被消耗。为了提高电路的转换效率，通常从外部添加肖特基二极管102使之与MOSFET(Q2)主体二极管并联。由于肖特基二极管具有比主体二极管低的正向电压，故肖特基二极管102有效地替代了MOSFET主体二极管。肖特基二极管的较低正向电压实现了改善的功耗。
多年来，肖特基二极管在MOSFET开关包装之外被实施。新近，一些制造商已提出将分离的肖特基二极管与分离的功率MOSFET器件共同封装的产品。还存在将功率MOSFET与肖特基二极管形成整体的实施方式。图2中示出了传统的单块集成的沟槽MOSFET及肖特基二极管的实例。肖特基二极管210形成在两个沟槽200-3与200-4之间，这两个沟槽在任一侧上被沟槽MOSFET单元围绕。N-型衬底202形成肖特基二极管210的阴极端子以及沟槽MOSFET的漏极端子。导电层218提供了二极管阳极端子并且也作为用于MOSFET单元的源极互连层。沟槽200-1、200-2、200-3、200-4及200-5中的栅电极在第三维度上连接到一起，因此被类似地驱动。沟槽MOSFET单元还包括本体区208，该本体区中具有源极区212和重本体区(heavy body region)214。
图2中的肖特基二极管介于沟槽MOSFET单元之间。因此，肖特基二极管消耗掉活性区域的绝大部分，这导致更低的电流速率或大的管芯(die)尺寸。因此，需要具有良好性能特性的单块且密集集成的肖特基二极管及沟槽栅FET。
发明内容
根据本发明的实施例，单块集成的沟槽FET及肖特基二极管包括终止于第一导电型(conductivity type)的第一硅区中的一对沟槽。由第一导电型的第二硅区隔开的第二导电型的两个本体区位于这对沟槽之间。第一导电型的源极区位于每个本体区上方。接触开口在这对沟槽之间延伸至该源极区下方一定深度。互连层填充了该接触开口，从而电接触源极区及第二硅区。在互连层电接触第二硅区的地方形成了肖特基接触。
在一个实施例中，该第一硅区具有比第二硅区高的掺杂浓度。
在另一实施例中，每个本体区在相应的源极区与第一硅区之间垂直地延伸，并且互连层沿本体区的下半部在一定深度处电接触第二硅区。
在另一实施例中，两个本体区中的每个均具有基本均匀的掺杂浓度。
在另一实施例中，在这对沟槽之间形成有第二导电型的重本体区，从而重本体区电接触两个本体区中的每个和第二硅区。
在另一实施例中，两个本体区、源极区、以及重本体区均与这对沟槽自动对准。
在另一实施例中，两个本体区及第二硅区具有基本相同的深度。
根据本发明的另一实施例，形成单块集成的沟槽FET及肖特基二极管的过程如下所述。形成延伸穿过上硅层且终止于下硅层中的两个沟槽。该上硅层及下硅层为第一导电型，且上硅层在下硅层上延伸。在上硅层中且在这对沟槽之间形成第二导电型的第一及第二硅区。形成第一导电型的第三硅区，该第三硅区在这对沟槽之间延伸到第一及第二硅区中，从而使第一及第二硅区的剩余下部形成两个本体区，这两个本体区被上硅层的一部分隔开。进行硅蚀刻，以形成延伸穿过第一硅区的接触开口，从而保留第一硅区的外部。第一硅区的外部形成源极区。形成填充接触开口的互连层，从而电接触源极区及上硅层的一部分。在互连层电接触第二硅区的地方形成肖特基接触。
在一个实施例中，下硅层具有比上硅层高的掺杂浓度。
在另一实施例中，互连层与上硅层的一部分之间的电接触在源极区下方一定深度处形成。
在另一实施例中，第一及第二区中的每个均具有基本均匀的掺杂浓度。
在另一实施例中，在这对沟槽之间形成有第二导电型的重本体区。该重本体区在两个本体区中且在上硅层的一部分中延伸。
在又一实施例中，两个本体区、源极区、以及重本体区均与这对沟槽自动对准。
参照说明书的剩余部分及附图可以实现对在此所公开的本发明的特性及优点的进一步理解。
附图说明
图1是关于采用具有肖特基二极管的功率MOSFET的传统直流/直流变流器的电路示意图；
图2示出了传统的单块集成的沟槽MOSFET及肖特基二极管的横截面图；
图3是长条状单元阵列的一部分的示例性简化等视轴图，每个长条状单元中均集成有根据本发明实施例的沟槽MOSFET及肖特基二极管；
图4示出了沿图3中的重本体区326的横截面图；
图5是示出了根据本发明实施例的、图3及图4中所示重本体区的可替换实施方式的简化横截面图；
图6A-图6F是示出了根据本发明实施例的、用于形成图3中所示的单块集成的沟槽MOSFET及肖特基二极管的示例性处理步骤的简化横截面图；
图7A-图7F示出了对于单块集成式沟槽MOSFET及肖特基二极管结构中的三种不同微坑(dimple)深度的模拟雪崩电流线。
具体实施方式
根据本发明的实施例，肖特基二极管最好与沟槽MOSFET集成在单个单元中，在这种单元阵列中重复多次。小到没有活性区域用于集成肖特基二极管，然而总的肖特基二极管区域大到足以处理100％的二极管正向传导。因此，MOSFET本体二极管从未接通，这消除了反向恢复损耗。此外，由于相比较于MOSFET本体二极管的正向压降，肖特基二极管具有较低的正向压降，故降低了功耗。
此外，肖特基二极管与MOSFET集成，从而在MOSFET源极区下方形成肖特基接触。这有利地远离源极区朝向肖特基区转移雪崩电流，故阻止了寄生双极晶体管接通。因此，改进了该器件的耐用性。本发明的该特征还在极大程度上消除了对重本体区的需求，典型地，在现有技术结构的每个MOSFET单元中需要该重本体区来阻止寄生双极晶体管接通。替代地，重本体区的岛(island)间歇地且彼此相隔很远地结合，仅仅为了确保源极金属与本体区的良好接触。实质上，现有技术沟槽MOSFET中所需的重本体区大多被肖特基二极管替代。因此，没有额外的硅区分配给肖特基二极管。
图3是长条状单元阵列的一部分的示例性简化等视轴图，每个长条状单元中均集成有根据本发明实施例的沟槽MOSFET及肖特基二极管。重掺杂N-型(N+)区302覆在N-型硅衬底(未示出)上面，该N-型硅衬底具有比N+区302甚至更高的掺杂浓度(N++)。多个沟槽304延伸至N+区302内的预定深度。在每个沟槽304中嵌入有保护电极305和上覆的栅电极308。在一个实施例中，保护电极305和栅电极308包含多晶硅。极间绝缘体310使栅电极与保护电极彼此绝缘。每个沟槽304的下侧壁及底部填充有保护绝缘层312，并且使保护电极305与周围的N+区302绝缘。沟槽304的上侧壁填充有比保护绝缘层312薄的栅极绝缘层316。每个栅电极308上方延伸有绝缘盖314。在一个实施例中，保护电极305沿第三维度电连接至源极区，因此在工作期间被偏压至与源极区相同的电势。在另一实施例中，保护电极305沿第三维度电连接至栅电极308，或者被允许浮动。
在每两个相邻的沟槽304之间设置有由轻掺杂N-型(N-)区320隔开的两个P-型本体区318。每个本体区318沿一个沟槽侧壁延伸。在图中所示且在此所述的各实施例中，本体区318及N-区320具有基本相同的深度，然而，在对该器件的工作不产生任何明显影响的前提下，本体区318可以略浅于或深于N-区320，反之亦然。每个本体区318上直接设置有重掺杂N-型源极区322。源极区322与栅电极308垂直相交，并且由于形成接触开口的微坑324的存在而具有圆形的外轮廓。每个微坑324在相应的每两个相邻沟槽之间的源极区322下方延伸。如所示的，源极区322及本体区318一起形成微坑324的圆形侧壁，并且N-区320沿微坑324的底部延伸。在一个实施例中，N+区302是N+外延层，而N-区320是其中形成有本体区318及源极区322的N-外延层的一部分。当MOSFET300接通时，在每个本体区318中且在每个源极区322与重掺杂区302之间沿沟槽侧壁形成有垂直的通道。
回到图3，被剥落以露出下面的区的肖特基隔离金属330填充微坑324且在绝缘盖314上方延伸。肖特基隔离金属330沿微坑324的底部电接触N-区320，进而形成肖特基接触。肖特基隔离金属330还用作顶面的源极互连，以便源极区322与重本体区326电连接。
在反向偏压期间，形成在每个本体/N-接合处的耗尽区有利地合并到N-区320中，进而完全耗尽肖特基接触下方的N-区320。这消除了肖特基泄漏电流，这又允许使用具有较低逸出功的隔离金属。因此，对于肖特基二极管，获得了甚至更低的正向电压。
沿单元长条间歇地形成有重本体区326的岛，如所示的。重本体区326穿过N-区320延伸。这更清楚地在图4中示出，图4是穿过图3中结构的重本体区326的横截面图。图4中的横截面图大多类似于沿图3中的等视轴图的正面的截面图，除了在图4中每两个相邻沟槽之间的两个源极区由穿过N-区320延伸的一个邻近重本体区326替代之外。重本体区326在源极金属330与本体区318之间提供了欧姆接触。由于重本体区326延伸穿过N-区320，故在这些区中没有形成肖特基二极管。由于不存在源极区，故在这些区中也没有MOSFET电流流过。
图5是示出了根据本发明另一实施例的、图3及图4中的重本体区的可替换实施方式的简化横截面图。在图5中，重本体区526仅沿每个微坑524的底部延伸，从而使源极区522保持完整。因此，MOSFET电流在这些区中流过，但重本体区526阻止了肖特基隔离金属430接触N-区310，进而在这些区中没有形成肖特基二极管。
回来参照图3，重本体区326的间歇设置与如现有技术图2的结构的、其中重本体区在两个相邻源极区之间且沿单元长条的整个长度延伸的传统实施方式不同。由于是肖特基二极管与沟槽MOSFET集成的方式，故在图3的结构中无需连续的重本体区。如在图3中可以看到的，通过使微坑324在源极区322下方适当地延伸，肖特基接触类似地在源极区322下方适当地形成。如以下进一步结合图7A-图7C更充分地描述的，当肖特基接触被置于源极区322下方适当位置时，则雪崩电流远离源极区322转向肖特基区，进而阻止了寄生双极晶体管接通。这消除了对现有技术结构中通常所需的沿单元长条的连续重本体区的需求。替代地，重本体区326的岛沿单元长条间歇地且彼此相隔很远地结合，以确保源极金属330与本体区318的良好接触。当连续的重本体区大多由肖特基区替代时，无需为肖特基二极管分配额外的硅区。因此，没有硅区用于集成肖特基二极管。
在一些实施例中，由器件开关需求(switching requirement)来控制沿长条设置重本体区326的频率。为了更快地开关器件，沿长条更频繁地设置重本体区。对于这些器件，可能需要为肖特基二极管分配额外的硅区(例如，通过增大单元间距)。为了更慢地开关器件，沿长条需要较少的重本体区。对于这些器件，在长条的每端设置一个重本体区可能就足够了，因此使肖特基二极管区最大化。
图6A-图6F是示出了根据本发明实施例的、用于形成图3中的集成式MOSFET-肖特基结构的示例性处理步骤的简化横截面图。在图6A中，利用传统技术在硅衬底(未示出)上方形成两个外延层602及620。外延层620(轻掺杂N-型层(N-))在外延层620(重掺杂N-型层(N+))上方延伸。形成、图案化并蚀刻硬掩模，以在N-外延层620上形成硬掩模岛601。因此，N-外延层620的表面积通过由硬掩模岛601限定的开口606露出。在一个实施例中，限定沟槽宽度的每个开口606是约0.3μm，而每个硬掩模岛601的宽度在0.4-0.8μm的范围内。这些尺寸限定了其中形成有MOSFET及肖特基二极管的单元间距。影响这些尺寸的因素包括光刻设备的能力和设计及性能目标。
在图6B中，利用传统的硅蚀刻技术穿过开口606蚀刻硅而形成终止于N-外延层620内的沟槽603。在一个实施例中，沟槽603具有的深度约为1μm。此后，利用传统的有选择外延生长(SEG)处理在每个沟槽603内产生高掺杂P-型(P+)硅区618A。在一个实施例中，P+硅区618A具有的掺杂浓度约为5×1017cm-3。在另一实施例中，在形成P+区618之前，形成填充沟槽608的侧壁及底部的高质量薄硅层。该薄硅层用作适于P+硅生成的无损的硅表面。
在图6C中，进行扩散处理，以使P-型掺杂剂扩散到N-外延层620内的P+区618A中。因此，形成在硬掩模岛601下方横向地延伸且向下到N-外延层620内的外扩的P+区618B。可以执行多个热循环以实现期望的向外扩散。图6C中的虚线示出了沟槽603的轮廓。该扩散处理以及该处理中的其他热循环使得N+外延层602向上扩散。对于选择N-外延层620的厚度，需考虑N+外延层602的这些向上扩散。
在图6D中，利用硬掩模岛601进行深沟槽蚀刻处理以形成沟槽604，该沟槽延伸穿过P+区618B及N-外延层620并终止于N+外延层602。在一个实施例中，沟槽604具有的深度约为2μm。沟槽蚀刻处理穿过并去除每个P+硅区618B的中心部分，留下沿沟槽侧壁延伸的垂直的外P+长条618C。
在本发明的另一实施例中，利用双道(two-pass)成角度注入而不是图6B-图6D中所示的有选择外延生长技术来形成P+长条618C，如下所述。在图6B中，在穿过掩模开口606形成沟槽603之后，利用传统的双道成角度注入技术将P-型掺杂剂(诸如硼)注入到相对的沟槽侧壁中。硬掩模岛604在注入处理期间用作阻挡结构，以阻止注入离子进入台面(mesa)区并将注入的离子的位置限制在N+外延层620中期望的区域。为了得到图6D中所示的结构，在双道成角度注入之后，进行第二沟槽蚀刻，以使沟槽603的深度延伸到N+外延层602中。在可替换实施例中，仅进行如下的一个沟槽蚀刻(而不是两个)。在图6B中，利用硬掩模岛601进行蚀刻，以形成延伸到N+外延层602中大约与图6D中的沟槽604相同深度的沟槽。此后，进行双道成角度注入，以将P-型掺杂剂注入到相对的沟槽侧壁中。调节注入角及硬掩模岛601的厚度，以限定接收注入离子的上沟槽侧壁区。
在图6E中，利用已知技术在沟槽604中形成保护栅极结构。形成填充沟槽604的下侧壁及底部的保护绝缘体612。此后，形成填充沟槽604的下部的保护电极605。此后，在保护电极605上形成电极间绝缘层610。此后，形成填充上沟槽侧壁的栅极绝缘体616。在一个实施例中，在该处理的较早阶段中形成栅极绝缘体616。绝缘盖区614在栅电极608上延伸并填充沟槽604的剩余部分。
接着，将N-型掺杂剂注入到所有外露的硅区中并紧接着执行处理中的驱动(drive)，进而形成N+区622A。在形成N+区622A时在活性区中没有使用掩模。如图6E中所示，与形成保护栅极结构及N+区622A有关的各种热循环使得P-型区618C向外扩散，进而形成较宽且较高的本体区618D。如上面所指出的，这些热循环还使得N+外延层602向上扩散，如图6E中所示。确保在完成制造处理时每两个相邻沟槽之间的两个本体区保持隔开且没有合并是非常重要的，否则肖特基二极管被切断。设计本处理时的另一目标是确保在完成该处理之后N-外延层620与本体区618D具有基本相同的深度，尽管略微不同的深度不会对本器件的工作产生严重的影响。可以通过调整多个处理步骤及参数，包括热循环、第一沟槽凹陷处(图6B)的深度、以及各区(包括本体区、N-外延层区及N+外延层区)的掺杂浓度来实现这些目标。
在图6F中，在活性区中没有使用掩模的情况下进行微坑蚀刻处理，以穿过N+区622A蚀刻，从而保留N+区622A的外部622B。保留的外部622A形成源极区。因此，在每两个相邻的沟槽之间形成微坑624。微坑624形成了在源极区622B下方延伸至N-区620中的接触开口。本公开中所使用的“微坑蚀刻”是指导致形成如图6F中的源极区622B的具有倾斜的、圆形外轮廓的硅区的硅蚀刻技术。在一个实施例中，微坑延伸至本体区618D的下半部内的一定深度。如前所述，较深的微坑导致在源极区下方形成肖特基接触。这有助于使反向雪崩电流远离源极，进而阻止了寄生双极晶体管接通。尽管上述微坑蚀刻在活性区中无需掩模，但在可替换实施例中使用掩模来限定N+区622A的中心部分，该中心部分被蚀刻至期望深度。因此，保留了在这一掩模下延伸的N+区622A的外部。这些外部形成源极区。
利用掩模层，沿每个长条将P-型掺杂剂间歇地注入到微坑区中。因此，在每两个相邻的沟槽之间形成重本体区的岛(未示出)。如果期望实现图4中的重本体区，在重本体注入期间需要使用足够高剂量的P-型掺杂剂，以便反掺杂(count-dope)源极区的待形成重本体区的那些部分。如果期望实现图5中的重本体区，在注入期间需要使用较低剂量的P-型掺杂剂，从而使源极区不被反掺杂，进而保持完整。
在图6F中，可以使用传统技术在该结构上形成肖特基隔离金属630。肖特基隔离金属630填充微坑624，并且在金属630与N-区620电接触的地方形成肖特基二极管。金属层630还接触源极区622B及重本体区。
在图6A-图6F所示的处理步骤中，临界对准无需使用这两个掩模。因此，集成的MOSFET-肖特基结构具有许多垂直及水平的自对准特征。此外，上述处理的实施例使得通道长度减小。传统处理利用注入及驱动技术来形成本体区。该技术导致通道区的锥形掺杂轮廓，这要求较长的通道长度。相反地，上述用于形成本体区的有选择外延生长及双道成角度注入的可替换技术在通道区中提供了一致掺杂轮廓，进而允许使用较短的通道长度。因此，提高了器件的导通电阻。
此外，使用双外延层结构来提供了在保持对MOSFET阈电压(Vth)的严密控制的同时使击穿电压及导通电阻最优化的设计灵活性。通过在N-外延层618中形成本体区618来实现对Vth的严密控制，与N+外延层602相比，该N-外延层618表现出更一致且可断定(predictable)的掺杂浓度。在具有可断定的掺杂浓度的背景区(background region)中形成本体区允许对阈电压的更严密控制。另一方面，对于相同的击穿电压，延伸到N+外延层602中的保护电极605允许在N+外延层602中使用较高的掺杂浓度。因此，对于相同的击穿电压，获得了较低的导通电阻，并且不会对MOSFET阈电压的控制产生不利影响。
图7A-图7F示出了对于集成的沟槽MOSFET-肖特基二极管结构中的三种不同微坑深度的模拟雪崩电流线。在图7A的结构中，微坑729A延伸至源极区722下方仅一定深度。在图7B的结构中，微坑729B更深地延伸至约本体区718高度的一半。在图7C的结构中，微坑729C甚至更深地延伸至恰好位于本体区718的底部上方。在图7A-图7C中，在顶部金属730中出现间隙。包括该间隙仅用于模拟的目的，而事实上，在顶部金属中不存在这一间隙，这从本公开的其他附图中是显而易见的。
如在图7A中所看出的，雪崩电流线732A紧邻源极区722。然而，由于在图7B中微坑深度增加且在图7C中甚至更深，雪崩电流线732B及732C进一步远离源极区722朝向肖特基区移动。远离源极区转移雪崩电流有助于阻止寄生双极晶体管接通，进而提高了器件的耐用性。本质上，肖特基区的作用就像聚集雪崩电流的重本体区，进而消除了对用于目的的重本体区的需求。仍会需要重本体区来获得与本体区的良好接触，但与传统的MOSFET结构相比，该重本体区的频率及尺寸可显著减小。这释放了分配给肖特基区二极管的较大硅区。因此，对于图7A-图7C中的示例性模拟结构，延伸至本体区718的下半部内的一定深度的微坑提供了最佳结果。
尽管已利用保护栅极沟槽MOSFET实施例描述了本发明，但对于本领域技术人员而言，鉴于本公开，以其他保护栅极MOSFET结构和具有较厚底部绝缘体的沟槽栅极MOSFET以及其他类型的功率器件来实现本发明将是显而易见的。例如，上述用于集成肖特基二极管与MOSFET的技术可以类似地实施到以上所参考的2004年12月29日提交的美国专利申请第11/026,276号中所公开的各功率器件中，具体地，实施到例如图1、图2A、图3A、图3B、图4A、图4C、图5C、图9B、图9C、图10-图12、及图24中所示的沟槽栅极、保护栅极、及电荷平衡器件中。
尽管以上示出并描述了多个特定实施例，但本发明的实施例并不限于此。例如，尽管利用开放式单元结构描述了本发明的一些实施例，但对于本领域技术人员而言，鉴于本公开，利用各种几何形状(诸如多边形、圆形、及矩形)的封闭式单元结构来实现本发明将是显而易见的。此外，尽管利用n-通道器件描述了本发明的实施例，但可以颠倒这些实施例中的硅区的导电型以获得p-通道器件。因此，本发明的范围不应参照以上说明书来确定，而是参照所附权利要求及其等效物的全部范围来确定。

Claims (45)

1.一种包括单块集成的沟槽FET及肖特基二极管的结构，所述单块集成的沟槽FET及肖特基二极管包括：
终止于第一导电型的第一硅区中的一对沟槽；
所述这对沟槽之间的第二导电型的两个本体区，所述两个本体区由所述第一导电型的第二硅区隔开；
每个本体区上的第一导电型的源极区；
在所述这对沟槽之间延伸至所述源极区下方一定深度的接触开口；以及
填充所述接触开口的互连层，从而电接触所述源极区及所述第二硅区，所述互连层与所述第二硅区形成肖特基接触。
2.根据权利要求1所述的结构，其中，所述第一硅区具有比所述第二硅区高的掺杂浓度。
3.根据权利要求1所述的结构，其中，每个本体区在相应的源极区与所述第一硅区之间垂直地延伸，并且所述互连层沿所述本体区的下半部在一定深度处电接触所述第二硅区。
4.根据权利要求1所述的结构，其中，所述两个本体区中的每个均具有基本均匀的掺杂浓度。
5.根据权利要求1所述的结构，其中，所述第一硅区是第一外延层，并且所述第二硅区是第二外延层，所述第一外延层在第一导电型的衬底上延伸，所述衬底具有比所述第一外延层高的掺杂浓度，并且所述第一外延层具有比所述第二外延层高的掺杂浓度。
6.根据权利要求1所述的结构，其中，所述两个本体区和相应的源极区均与所述这对沟槽自动对准。
7.根据权利要求1所述的结构，还包括形成在所述这对沟槽之间的第二导电型的重本体区，从而所述重本体区电接触所述两个本体区中的每个和所述第二硅区，所述重本体区具有比所述两个本体区高的掺杂浓度。
8.根据权利要求7所述的结构，其中，所述两个本体区、所述源极区、及所述重本体区均与所述这对沟槽自动对准。
9.根据权利要求1所述的结构，其中，所述两个本体区及所述第二硅区具有基本相同的深度。
10.根据权利要求1所述的结构，还包括：
每个沟槽中凹入的栅电极；以及
使每个栅电极与所述互连层绝缘的绝缘盖。
11.根据权利要求10所述的结构，还包括：
在每个沟槽中所述凹入的栅电极下方的保护电极；以及
使所述保护电极与所述第一硅区绝缘的保护绝缘体。
12.根据权利要求10所述的结构，还包括：
直接位于所述凹入的栅电极下方、沿每个沟槽的底部延伸的厚底部绝缘体。
13.根据权利要求1所述的结构，还包括直流/直流同步反向变流器，其中所述单块集成的沟槽FET及肖特基二极管作为低压侧开关接合至负载。
14.根据权利要求1所述的结构，其中，所述互连层是肖特基隔离金属层。
15.一种包括单块集成的沟槽MOSFET及肖特基二极管的结构，所述单块集成的沟槽MOSFET及肖特基二极管包括：
第一导电型的第一外延层；
所述第一外延层上方的第一导电型的第二外延层，所述第一外延层具有比所述第二外延层高的掺杂浓度；
穿过所述第二外延层延伸并且终止于所述第一外延层中的多个沟槽；
每两个相邻沟槽之间的第二导电型的两个本体区，所述两个本体区由所述第二外延层的一部分隔开；
每个本体区上方的第一导电型的源极区；
在每两个相邻沟槽之间延伸至所述源极区下方一定深度的接触开口；以及
填充所述接触开口的肖特基隔离金属层，从而电接触所述源极区和所述第二外延层的所述部分，所述肖特基隔离金属层与所述第二外延层的一部分形成肖特基接触。
16.根据权利要求15所述的结构，其中，每个本体区在相应的源极区与所述第一外延层之间垂直地延伸，并且所述肖特基隔离金属层沿所述本体区的下半部在一定深度处电接触所述第二外延层的所述部分。
17.根据权利要求15所述的结构，其中，所述两个本体区中的每个均具有基本均匀的掺杂浓度。
18.根据权利要求15所述的结构，其中，所述第一外延层在第一导电型的衬底上延伸，所述衬底具有比所述第一外延层高的掺杂浓度。
19.根据权利要求15所述的结构，其中，所述两个本体区和所述相应的源极区均与所述两个相邻沟槽自动对准，所述两个本体区和所述相应源极区位于所述两个相邻沟槽之间。
20.根据权利要求15所述的结构，还包括形成在每两个相邻沟槽之间的第二导电型的多个重本体区，从而使每个重本体区电接触位于所述两个相邻沟槽之间的所述两个本体区和所述第二外延层的所述部分。
21.根据权利要求20所述的结构，其中，所述两个本体区、所述对应源极区、以及所述多个重本体区均与所述两个相邻沟槽自动对准，所述两个本体区、所述对应源极区、以及所述多个重本体区位于所述两个相邻沟槽之间。
22.根据权利要求15所述的结构，其中，所述两个本体区和所述第二外延层具有基本相同的深度。
23.根据权利要求15所述的结构，还包括：
每个沟槽中的凹入的栅电极；以及
使每个栅电极与所述肖特基隔离金属层绝缘的绝缘盖。
24.根据权利要求23所述的结构，还包括：
在每个沟槽中所述凹入的栅电极下方的保护电极；以及
使所述保护电极与所述第一外延层绝缘的保护绝缘体。
25.根据权利要求23所述的结构，还包括：
直接位于所述凹入的栅电极下方、沿每个沟槽的底部延伸的厚底部绝缘体。
26.根据权利要求15所述的结构，还包括直流/直流同步反向变流器，其中所述单块集成的沟槽MOSFET及肖特基二极管作为低压侧开关接合至负载。
27.一种形成单块集成的沟槽FET及肖特基二极管的方法，所述方法包括：
形成延伸穿过上硅层且终止于下硅层中的一对沟槽，所述上硅层及所述下硅层为第一导电型，所述上硅层在所述下硅层上延伸；
在所述上硅层中且在所述这对沟槽之间形成第二导电型的第一及第二硅区；
形成第一导电型的第三硅区，所述第三硅区在所述这对沟槽之间延伸到所述第一及第二硅区中，从而使所述第一及第二硅区的剩余下部形成两个本体区，所述两个本体区被所述上硅层的一部分隔开；
进行硅蚀刻，以形成延伸穿过所述第三硅区的接触开口，从而保留所述第三硅区的外部，所述第三硅区的外部形成源极区；以及
形成填充所述接触开口的互连层，从而电接触所述源极区及所述上硅层的所述部分，所述互连层与所述上硅层的所述部分形成肖特基接触。
28.根据权利要求27所述的方法，其中，所述下硅层具有比所述上硅层高的掺杂浓度。
29.根据权利要求27所述的方法，其中，所述互连层与所述上硅层的所述部分之间的电接触形成在所述源极区下方的一定深度处。
30.根据权利要求27所述的方法，其中，所述互连层与所述上硅层的所述部分之间的电接触形成在沿所述本体区的下半部的一定深度处。
31.根据权利要求27所述的方法，其中，所述第一及第二硅区中的每个均具有基本均匀的掺杂浓度。
32.根据权利要求27所述的方法，其中，所述下硅层外延地形成在第一导电型的衬底上，并且所述上硅层外延地形成在所述下硅层上，其中，所述衬底具有比所述下硅层高的掺杂浓度，而所述下硅层具有比所述上硅层高的掺杂浓度。
33.根据权利要求27所述的方法，其中，所述两个本体区和所述源极区均与所述这对沟槽自动对准。
34.根据权利要求27所述的方法，还包括：
在所述这对沟槽之间形成第二导电型的重本体区，所述重本体区延伸到所述两个本体区中并且延伸到所述上硅层的所述部分中，所述重本体区具有比所述两个本体区高的掺杂浓度。
35.根据权利要求34所述的方法，其中，所述两个本体区、所述源极区、以及所述重本体区均与所述这对沟槽自动对准。
36.根据权利要求27所述的方法，其中，所述两个本体区和所述上硅层具有基本相同的深度。
37.根据权利要求27所述的方法，还包括：
在每个沟槽中形成凹入的栅电极；以及
形成使每个栅电极与所述互连层绝缘的绝缘盖。
38.根据权利要求37所述的方法，还包括：
在形成所述凹入的栅电极之前，在每个沟槽的底部中形成保护电极。
39.根据权利要求37所述的方法，还包括：
在形成所述凹入的栅电极之前，形成沿每个沟槽的底部延伸的厚底部绝缘体。
40.根据权利要求27所述的方法，其中，所述互连层是肖特基隔离金属层。
41.一种形成单块集成的沟槽MOSFET及肖特基二极管的方法，所述方法包括：
利用掩模形成延伸到且终止于上硅层中的第一多个沟槽，所述上硅层在下硅层上延伸，所述上硅层和所述下硅层为第一导电型；
用第二导电型的硅材料填充所述第一多个沟槽；
进行热循环，以将所述硅材料向外扩散到所述上硅层中及所述掩模下方；
利用掩模形成延伸穿过所述硅材料、所述上硅层、且终止于所述下硅层中的第二多个沟槽，从而在相应沟槽的每侧保留所述硅材料的位于所述掩模下方的向外扩散部分；
形成延伸到所述向外扩散部分中的第一导电型的第一硅区，从而使每两个相邻沟槽之间的所述向外扩散部分的保留的下部形成两个本体区，所述两个本体区被所述上硅层的一部分隔开；
进行硅蚀刻，以形成延伸穿过所述第一硅区的接触开口，从而保留所述第一硅区的外部，所述第一硅区的外部形成源极区；以及
形成填充所述接触开口的互连层，从而电接触所述源极区及所述上硅层的所述部分，所述互连层与所述上硅层的所述部分形成肖特基接触。
42.一种形成单块集成的沟槽MOSFET及肖特基二极管的方法，所述方法包括：
利用掩模形成延伸穿过上硅层且终止于下硅层中的多个沟槽，所述上硅层和所述下硅层为第一导电型，所述上硅层在下硅层上延伸；
进行双道成角度注入，以在所述上硅层中沿每个沟槽的上侧壁形成第二导电型的第一硅区；
形成第一导电型的第二硅区，所述第二硅区在每两个相邻沟槽之间延伸到所述第一硅区中，从而使所述第一硅区的剩余下部在每两个相邻沟槽之间形成两个本体区，所述两个本体区被所述上硅层的一部分隔开；
进行硅蚀刻，以形成延伸穿过所述第二硅区的接触开口，从而在每两个相邻沟槽之间保留所述第二硅区的外部，所述第二硅区的外部形成源极区；以及
形成填充所述接触开口的互连层，从而电接触所述源极区及所述上硅层的所述部分，所述互连层与所述上硅层的所述部分形成肖特基接触。
43.根据权利要求42所述的方法，其中，所述上硅层的在所述双道成角度注入期间接收掺杂剂的区域由注入角和所述掩模的厚度来限定。
44.一种形成单块集成的沟槽MOSFET及肖特基二极管的方法，所述方法包括：
利用掩模形成延伸到且终止于上硅层内的第一深度处的第一多个沟槽，所述上硅层在下硅层上延伸，所述上硅层和所述下硅层为第一导电型；
进行双道成角度注入，以在所述上硅层中沿每个沟槽的侧壁形成第二导电型的第一硅区；
利用所述掩模使所述多个沟槽更深地延伸至所述下硅层内的第二深度；
形成第一导电型的第二硅区，所述第二硅区在每两个相邻沟槽之间延伸到所述第一硅区中，从而使所述第一硅区的剩余下部在每两个相邻沟槽之间形成两个本体区，所述两个本体区被所述上硅层的一部分隔开；
进行硅蚀刻，以形成延伸穿过所述第二硅区的接触开口，从而在每两个相邻沟槽之间保留所述第二硅区的外部，所述第二硅区的外部形成源极区；以及
形成填充所述接触开口的互连层，从而电接触所述源极区及所述上硅层的所述部分，所述互连层与所述上硅层的所述部分形成肖特基接触。
45.根据权利要求44所述的方法，其中，所述上硅层的在所述双道成角度注入期间接收掺杂剂的区域由所述多个沟槽的所述第一深度、所述掩模的厚度、以及注入角来限定。
CN2007800190574A 2006-03-24 2007-03-08 具有集成肖特基二极管的高密度沟槽fet及制造方法 Active CN101454882B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/388,790 2006-03-24
US11/388,790 US7446374B2 (en) 2006-03-24 2006-03-24 High density trench FET with integrated Schottky diode and method of manufacture
PCT/US2007/063612 WO2007112187A2 (en) 2006-03-24 2007-03-08 High density trench fet with integrated schottky diode and method of manufacture

Publications (2)

Publication Number Publication Date
CN101454882A CN101454882A (zh) 2009-06-10
CN101454882B true CN101454882B (zh) 2011-08-31

Family

ID=38532425

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800190574A Active CN101454882B (zh) 2006-03-24 2007-03-08 具有集成肖特基二极管的高密度沟槽fet及制造方法

Country Status (8)

Country Link
US (2) US7446374B2 (zh)
JP (1) JP2009531836A (zh)
KR (1) KR101361239B1 (zh)
CN (1) CN101454882B (zh)
AT (1) AT505583A2 (zh)
DE (1) DE112007000700B4 (zh)
TW (1) TWI443826B (zh)
WO (1) WO2007112187A2 (zh)

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6838722B2 (en) * 2002-03-22 2005-01-04 Siliconix Incorporated Structures of and methods of fabricating trench-gated MIS devices
US8283723B2 (en) * 2005-02-11 2012-10-09 Alpha & Omega Semiconductor Limited MOS device with low injection diode
US7952139B2 (en) * 2005-02-11 2011-05-31 Alpha & Omega Semiconductor Ltd. Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
US7285822B2 (en) * 2005-02-11 2007-10-23 Alpha & Omega Semiconductor, Inc. Power MOS device
US8093651B2 (en) * 2005-02-11 2012-01-10 Alpha & Omega Semiconductor Limited MOS device with integrated schottky diode in active region contact trench
US7948029B2 (en) 2005-02-11 2011-05-24 Alpha And Omega Semiconductor Incorporated MOS device with varying trench depth
US8362547B2 (en) 2005-02-11 2013-01-29 Alpha & Omega Semiconductor Limited MOS device with Schottky barrier controlling layer
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
JP5222466B2 (ja) 2006-08-09 2013-06-26 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8008716B2 (en) * 2006-09-17 2011-08-30 Alpha & Omega Semiconductor, Ltd Inverted-trench grounded-source FET structure with trenched source body short electrode
US7544571B2 (en) * 2006-09-20 2009-06-09 Fairchild Semiconductor Corporation Trench gate FET with self-aligned features
US20080150013A1 (en) * 2006-12-22 2008-06-26 Alpha & Omega Semiconductor, Ltd Split gate formation with high density plasma (HDP) oxide layer as inter-polysilicon insulation layer
US8686493B2 (en) * 2007-10-04 2014-04-01 Fairchild Semiconductor Corporation High density FET with integrated Schottky
US7932556B2 (en) * 2007-12-14 2011-04-26 Fairchild Semiconductor Corporation Structure and method for forming power devices with high aspect ratio contact openings
US7772668B2 (en) * 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
US7965126B2 (en) 2008-02-12 2011-06-21 Transphorm Inc. Bridge circuits and their components
US9882049B2 (en) * 2014-10-06 2018-01-30 Alpha And Omega Semiconductor Incorporated Self-aligned slotted accumulation-mode field effect transistor (AccuFET) structure and method
US7977768B2 (en) * 2008-04-01 2011-07-12 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
JP5530602B2 (ja) 2008-04-09 2014-06-25 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9093521B2 (en) * 2008-06-30 2015-07-28 Alpha And Omega Semiconductor Incorporated Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
US7936009B2 (en) 2008-07-09 2011-05-03 Fairchild Semiconductor Corporation Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein
US8304829B2 (en) 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8174067B2 (en) * 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8362552B2 (en) * 2008-12-23 2013-01-29 Alpha And Omega Semiconductor Incorporated MOSFET device with reduced breakdown voltage
US8227855B2 (en) 2009-02-09 2012-07-24 Fairchild Semiconductor Corporation Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same
US8148749B2 (en) 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
TWI388059B (zh) * 2009-05-01 2013-03-01 Niko Semiconductor Co Ltd The structure of gold-oxygen semiconductor and its manufacturing method
US8049276B2 (en) 2009-06-12 2011-11-01 Fairchild Semiconductor Corporation Reduced process sensitivity of electrode-semiconductor rectifiers
CN101609801B (zh) * 2009-07-03 2011-05-25 英属维京群岛商节能元件股份有限公司 沟槽式肖特基二极管及其制作方法
US7952141B2 (en) 2009-07-24 2011-05-31 Fairchild Semiconductor Corporation Shield contacts in a shielded gate MOSFET
US8252647B2 (en) * 2009-08-31 2012-08-28 Alpha & Omega Semiconductor Incorporated Fabrication of trench DMOS device having thick bottom shielding oxide
TWI380448B (en) * 2009-09-16 2012-12-21 Anpec Electronics Corp Overlapping trench gate semiconductor device and manufacturing method thereof
US9425305B2 (en) 2009-10-20 2016-08-23 Vishay-Siliconix Structures of and methods of fabricating split gate MIS devices
US20120220092A1 (en) * 2009-10-21 2012-08-30 Vishay-Siliconix Method of forming a hybrid split gate simiconductor
US9419129B2 (en) 2009-10-21 2016-08-16 Vishay-Siliconix Split gate semiconductor device with curved gate oxide profile
US8247296B2 (en) * 2009-12-09 2012-08-21 Semiconductor Components Industries, Llc Method of forming an insulated gate field effect transistor device having a shield electrode structure
JP5636254B2 (ja) * 2009-12-15 2014-12-03 株式会社東芝 半導体装置
US9577089B2 (en) 2010-03-02 2017-02-21 Vishay-Siliconix Structures and methods of fabricating dual gate devices
CN101882617B (zh) * 2010-06-12 2011-11-30 中国科学院上海微系统与信息技术研究所 肖特基二极管、半导体存储器及其制造工艺
US8252648B2 (en) * 2010-06-29 2012-08-28 Alpha & Omega Semiconductor, Inc. Power MOSFET device with self-aligned integrated Schottky and its manufacturing method
JP5740108B2 (ja) * 2010-07-16 2015-06-24 株式会社東芝 半導体装置
CN102347359B (zh) * 2010-07-29 2014-03-26 万国半导体股份有限公司 一种功率mosfet器件及其制造方法
JP5674530B2 (ja) * 2010-09-10 2015-02-25 ルネサスエレクトロニクス株式会社 半導体装置の制御装置
US8461646B2 (en) * 2011-02-04 2013-06-11 Vishay General Semiconductor Llc Trench MOS barrier schottky (TMBS) having multiple floating gates
US8587059B2 (en) * 2011-04-22 2013-11-19 Infineon Technologies Austria Ag Transistor arrangement with a MOSFET
US8502302B2 (en) * 2011-05-02 2013-08-06 Alpha And Omega Semiconductor Incorporated Integrating Schottky diode into power MOSFET
KR101619580B1 (ko) 2011-05-18 2016-05-10 비쉐이-실리코닉스 반도체 장치
JP6290526B2 (ja) 2011-08-24 2018-03-07 ローム株式会社 半導体装置およびその製造方法
WO2013166079A1 (en) * 2012-04-30 2013-11-07 Vishay-Siliconix Integrated circuit design
US8921931B2 (en) * 2012-06-04 2014-12-30 Infineon Technologies Austria Ag Semiconductor device with trench structures including a recombination structure and a fill structure
KR101828495B1 (ko) 2013-03-27 2018-02-12 삼성전자주식회사 평탄한 소스 전극을 가진 반도체 소자
KR101934893B1 (ko) 2013-03-27 2019-01-03 삼성전자 주식회사 그루브 소스 컨택 영역을 가진 반도체 소자의 제조 방법
KR20150035198A (ko) * 2013-09-27 2015-04-06 삼성전자주식회사 반도체 소자 및 그 제조방법
KR102046663B1 (ko) * 2013-11-04 2019-11-20 매그나칩 반도체 유한회사 반도체 소자 및 그 제조방법
WO2015093190A1 (ja) * 2013-12-16 2015-06-25 富士電機株式会社 半導体装置および半導体装置の製造方法
CN115483211A (zh) 2014-08-19 2022-12-16 维西埃-硅化物公司 电子电路
US9755043B2 (en) * 2014-12-04 2017-09-05 Shuk-Wa FUNG Trench gate power semiconductor field effect transistor
US10008384B2 (en) 2015-06-25 2018-06-26 Varian Semiconductor Equipment Associates, Inc. Techniques to engineer nanoscale patterned features using ions
JP6217708B2 (ja) * 2015-07-30 2017-10-25 トヨタ自動車株式会社 半導体装置とその製造方法
US9780088B1 (en) 2016-03-31 2017-10-03 International Business Machines Corporation Co-fabrication of vertical diodes and fin field effect transistors on the same substrate
CN105957884A (zh) * 2016-06-24 2016-09-21 上海格瑞宝电子有限公司 一种分栅栅极沟槽结构和沟槽肖特基二极管及其制备方法
KR101836258B1 (ko) 2016-07-05 2018-03-08 현대자동차 주식회사 반도체 소자 및 그 제조 방법
US10304971B2 (en) 2016-07-16 2019-05-28 Champion Microelectronic Corp. High speed Schottky rectifier
US20190221664A1 (en) * 2016-09-02 2019-07-18 Shindengen Electric Manufacturing Co., Ltd. Mosfet and power conversion circuit
US10770599B2 (en) 2016-09-03 2020-09-08 Champion Microelectronic Corp. Deep trench MOS barrier junction all around rectifier and MOSFET
US10211333B2 (en) * 2017-04-26 2019-02-19 Alpha And Omega Semiconductor (Cayman) Ltd. Scalable SGT structure with improved FOM
JP2019046991A (ja) * 2017-09-04 2019-03-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US11081554B2 (en) * 2017-10-12 2021-08-03 Semiconductor Components Industries, Llc Insulated gate semiconductor device having trench termination structure and method
CN108231900A (zh) * 2017-12-28 2018-06-29 中山汉臣电子科技有限公司 一种功率半导体器件及其制备方法
JP6923457B2 (ja) * 2018-01-19 2021-08-18 株式会社日立製作所 炭化ケイ素半導体装置およびその製造方法、電力変換装置、自動車並びに鉄道車両
DE102018103849B4 (de) * 2018-02-21 2022-09-01 Infineon Technologies Ag Siliziumcarbid-Halbleiterbauelement mit einer in einer Grabenstruktur ausgebildeten Gateelektrode
CN108346701B (zh) * 2018-04-12 2020-05-26 电子科技大学 一种屏蔽栅功率dmos器件
US11031472B2 (en) * 2018-12-28 2021-06-08 General Electric Company Systems and methods for integrated diode field-effect transistor semiconductor devices
US11217541B2 (en) 2019-05-08 2022-01-04 Vishay-Siliconix, LLC Transistors with electrically active chip seal ring and methods of manufacture
CN110492761A (zh) * 2019-07-12 2019-11-22 西安科锐盛创新科技有限公司 一种整流电路系统、整流天线和微波无线能量传输系统
JP7237772B2 (ja) * 2019-08-20 2023-03-13 株式会社東芝 半導体装置
US11183514B2 (en) 2019-09-05 2021-11-23 Globalfoundries U.S. Inc. Vertically stacked field effect transistors
US11218144B2 (en) 2019-09-12 2022-01-04 Vishay-Siliconix, LLC Semiconductor device with multiple independent gates
US11114558B2 (en) * 2019-10-18 2021-09-07 Nami MOS CO., LTD. Shielded gate trench MOSFET integrated with super barrier rectifier
JP7528743B2 (ja) 2020-11-27 2024-08-06 三菱電機株式会社 半導体装置
US11869967B2 (en) 2021-08-12 2024-01-09 Alpha And Omega Semiconductor International Lp Bottom source trench MOSFET with shield electrode
CN114664926A (zh) * 2022-03-30 2022-06-24 电子科技大学 一种功率半导体器件结构
DE102022110998A1 (de) 2022-05-04 2023-11-09 Infineon Technologies Ag Halbleitervorrichtung und verfahren zum herstellen einer halbleitervorrichtung
TWI849419B (zh) * 2022-05-11 2024-07-21 新唐科技股份有限公司 半導體結構及其形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801417A (en) * 1988-05-17 1998-09-01 Advanced Power Technology, Inc. Self-aligned power MOSFET device with recessed gate and source
CN1677687A (zh) * 2004-03-29 2005-10-05 三洋电机株式会社 半导体装置及其制造方法

Family Cites Families (316)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3257626A (en) * 1962-12-31 1966-06-21 Ibm Semiconductor laser structures
US3404295A (en) 1964-11-30 1968-10-01 Motorola Inc High frequency and voltage transistor with added region for punch-through protection
US3412297A (en) 1965-12-16 1968-11-19 United Aircraft Corp Mos field-effect transistor with a onemicron vertical channel
US3497777A (en) 1967-06-13 1970-02-24 Stanislas Teszner Multichannel field-effect semi-conductor device
US3564356A (en) 1968-10-24 1971-02-16 Tektronix Inc High voltage integrated circuit transistor
US3660697A (en) * 1970-02-16 1972-05-02 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US4003072A (en) 1972-04-20 1977-01-11 Sony Corporation Semiconductor device with high voltage breakdown resistance
US4337474A (en) 1978-08-31 1982-06-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US4638344A (en) 1979-10-09 1987-01-20 Cardwell Jr Walter T Junction field-effect transistor controlled by merged depletion regions
US4698653A (en) 1979-10-09 1987-10-06 Cardwell Jr Walter T Semiconductor devices controlled by depletion regions
US4338616A (en) 1980-02-19 1982-07-06 Xerox Corporation Self-aligned Schottky metal semi-conductor field effect transistor with buried source and drain
US4868624A (en) 1980-05-09 1989-09-19 Regents Of The University Of Minnesota Channel collector transistor
US4300150A (en) 1980-06-16 1981-11-10 North American Philips Corporation Lateral double-diffused MOS transistor device
US4326332A (en) 1980-07-28 1982-04-27 International Business Machines Corp. Method of making a high density V-MOS memory array
EP0051693B1 (de) * 1980-11-12 1985-06-19 Ibm Deutschland Gmbh Elektrisch umschaltbarer Festwertspeicher
US4324038A (en) * 1980-11-24 1982-04-13 Bell Telephone Laboratories, Incorporated Method of fabricating MOS field effect transistors
GB2089119A (en) 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
US4974059A (en) 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
JPS6016420A (ja) 1983-07-08 1985-01-28 Mitsubishi Electric Corp 選択的エピタキシヤル成長方法
US4639761A (en) 1983-12-16 1987-01-27 North American Philips Corporation Combined bipolar-field effect transistor resurf devices
US4568958A (en) * 1984-01-03 1986-02-04 General Electric Company Inversion-mode insulated-gate gallium arsenide field-effect transistors
FR2566179B1 (fr) 1984-06-14 1986-08-22 Commissariat Energie Atomique Procede d'autopositionnement d'un oxyde de champ localise par rapport a une tranchee d'isolement
US5208657A (en) 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US4694313A (en) * 1985-02-19 1987-09-15 Harris Corporation Conductivity modulated semiconductor structure
US4673962A (en) * 1985-03-21 1987-06-16 Texas Instruments Incorporated Vertical DRAM cell and method
US4774556A (en) 1985-07-25 1988-09-27 Nippondenso Co., Ltd. Non-volatile semiconductor memory device
US4956308A (en) 1987-01-20 1990-09-11 Itt Corporation Method of making self-aligned field-effect transistor
US5262336A (en) 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
US5034785A (en) 1986-03-24 1991-07-23 Siliconix Incorporated Planar vertical channel DMOS structure
US4716126A (en) 1986-06-05 1987-12-29 Siliconix Incorporated Fabrication of double diffused metal oxide semiconductor transistor
JPH0693512B2 (ja) 1986-06-17 1994-11-16 日産自動車株式会社 縦形ｍｏｓｆｅｔ
US5607511A (en) 1992-02-21 1997-03-04 International Business Machines Corporation Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
US4746630A (en) 1986-09-17 1988-05-24 Hewlett-Packard Company Method for producing recessed field oxide with improved sidewall characteristics
US4941026A (en) 1986-12-05 1990-07-10 General Electric Company Semiconductor devices exhibiting minimum on-resistance
JP2577330B2 (ja) 1986-12-11 1997-01-29 新技術事業団 両面ゲ−ト静電誘導サイリスタの製造方法
JPS63171856A (ja) 1987-01-09 1988-07-15 Hitachi Ltd 耐熱鋼
US5105243A (en) 1987-02-26 1992-04-14 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide field effect transistor with single gate structure
US4821095A (en) 1987-03-12 1989-04-11 General Electric Company Insulated gate semiconductor device with extra short grid and method of fabrication
US4745079A (en) * 1987-03-30 1988-05-17 Motorola, Inc. Method for fabricating MOS transistors having gates with different work functions
US4801986A (en) 1987-04-03 1989-01-31 General Electric Company Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method
US4823176A (en) 1987-04-03 1989-04-18 General Electric Company Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area
US4811065A (en) 1987-06-11 1989-03-07 Siliconix Incorporated Power DMOS transistor with high speed body diode
US5164325A (en) 1987-10-08 1992-11-17 Siliconix Incorporated Method of making a vertical current flow field effect transistor
US4893160A (en) 1987-11-13 1990-01-09 Siliconix Incorporated Method for increasing the performance of trenched devices and the resulting structure
US4914058A (en) 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
US4967245A (en) 1988-03-14 1990-10-30 Siliconix Incorporated Trench power MOSFET device
US4903189A (en) 1988-04-27 1990-02-20 General Electric Company Low noise, high frequency synchronous rectifier
KR0173111B1 (ko) 1988-06-02 1999-02-01 야마무라 가쯔미 트렌치 게이트 mos fet
JPH0216763A (ja) 1988-07-05 1990-01-19 Toshiba Corp 半導体装置の製造方法
US4853345A (en) 1988-08-22 1989-08-01 Delco Electronics Corporation Process for manufacture of a vertical DMOS transistor
US5268311A (en) 1988-09-01 1993-12-07 International Business Machines Corporation Method for forming a thin dielectric layer on a substrate
US5156989A (en) 1988-11-08 1992-10-20 Siliconix, Incorporated Complementary, isolated DMOS IC technology
US5346834A (en) * 1988-11-21 1994-09-13 Hitachi, Ltd. Method for manufacturing a semiconductor device and a semiconductor memory device
US5072266A (en) 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
US5111253A (en) 1989-05-09 1992-05-05 General Electric Company Multicellular FET having a Schottky diode merged therewith
US4992390A (en) 1989-07-06 1991-02-12 General Electric Company Trench gate structure with thick bottom oxide
EP0450082B1 (en) 1989-08-31 2004-04-28 Denso Corporation Insulated gate bipolar transistor
US4982260A (en) 1989-10-02 1991-01-01 General Electric Company Power rectifier with trenches
US5248894A (en) 1989-10-03 1993-09-28 Harris Corporation Self-aligned channel stop for trench-isolated island
US5242845A (en) 1990-06-13 1993-09-07 Kabushiki Kaisha Toshiba Method of production of vertical MOS transistor
US5126807A (en) 1990-06-13 1992-06-30 Kabushiki Kaisha Toshiba Vertical MOS transistor and its production method
US5071782A (en) 1990-06-28 1991-12-10 Texas Instruments Incorporated Vertical memory cell array and method of fabrication
US5079608A (en) 1990-11-06 1992-01-07 Harris Corporation Power MOSFET transistor circuit with active clamp
US5065273A (en) 1990-12-04 1991-11-12 International Business Machines Corporation High capacity DRAM trench capacitor and methods of fabricating same
US5684320A (en) * 1991-01-09 1997-11-04 Fujitsu Limited Semiconductor device having transistor pair
CN1019720B (zh) 1991-03-19 1992-12-30 电子科技大学 半导体功率器件
US5164802A (en) 1991-03-20 1992-11-17 Harris Corporation Power vdmosfet with schottky on lightly doped drain of lateral driver fet
US5250450A (en) 1991-04-08 1993-10-05 Micron Technology, Inc. Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance
JP2603886B2 (ja) 1991-05-09 1997-04-23 日本電信電話株式会社 薄層ｓｏｉ型絶縁ゲート型電界効果トランジスタの製造方法
KR940002400B1 (ko) 1991-05-15 1994-03-24 금성일렉트론 주식회사 리세스 게이트를 갖는 반도체장치의 제조방법
US5219793A (en) 1991-06-03 1993-06-15 Motorola Inc. Method for forming pitch independent contacts and a semiconductor device having the same
KR940006702B1 (ko) 1991-06-14 1994-07-25 금성일렉트론 주식회사 모스패트의 제조방법
JP2570022B2 (ja) 1991-09-20 1997-01-08 株式会社日立製作所 定電圧ダイオード及びそれを用いた電力変換装置並びに定電圧ダイオードの製造方法
JPH0613627A (ja) 1991-10-08 1994-01-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH05304297A (ja) 1992-01-29 1993-11-16 Nec Corp 電力用半導体装置およびその製造方法
US5283452A (en) * 1992-02-14 1994-02-01 Hughes Aircraft Company Distributed cell monolithic mircowave integrated circuit (MMIC) field-effect transistor (FET) amplifier
US5315142A (en) 1992-03-23 1994-05-24 International Business Machines Corporation High performance trench EEPROM cell
US5554862A (en) 1992-03-31 1996-09-10 Kabushiki Kaisha Toshiba Power semiconductor device
JPH06196723A (ja) 1992-04-28 1994-07-15 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5640034A (en) 1992-05-18 1997-06-17 Texas Instruments Incorporated Top-drain trench based resurf DMOS transistor structure
US5233215A (en) 1992-06-08 1993-08-03 North Carolina State University At Raleigh Silicon carbide power MOSFET with floating field ring and floating field plate
US5430324A (en) 1992-07-23 1995-07-04 Siliconix, Incorporated High voltage transistor having edge termination utilizing trench technology
US5558313A (en) 1992-07-24 1996-09-24 Siliconix Inorporated Trench field effect transistor with reduced punch-through susceptibility and low RDSon
US5910669A (en) * 1992-07-24 1999-06-08 Siliconix Incorporated Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof
US5294824A (en) 1992-07-31 1994-03-15 Motorola, Inc. High voltage transistor having reduced on-resistance
GB9216599D0 (en) 1992-08-05 1992-09-16 Philips Electronics Uk Ltd A semiconductor device comprising a vertical insulated gate field effect device and a method of manufacturing such a device
US5300447A (en) 1992-09-29 1994-04-05 Texas Instruments Incorporated Method of manufacturing a minimum scaled transistor
JPH06163907A (ja) 1992-11-20 1994-06-10 Hitachi Ltd 電圧駆動型半導体装置
US5275965A (en) 1992-11-25 1994-01-04 Micron Semiconductor, Inc. Trench isolation using gated sidewalls
US5326711A (en) 1993-01-04 1994-07-05 Texas Instruments Incorporated High performance high voltage vertical transistor and method of fabrication
DE4300806C1 (de) 1993-01-14 1993-12-23 Siemens Ag Verfahren zur Herstellung von vertikalen MOS-Transistoren
US5418376A (en) 1993-03-02 1995-05-23 Toyo Denki Seizo Kabushiki Kaisha Static induction semiconductor device with a distributed main electrode structure and static induction semiconductor device with a static induction main electrode shorted structure
US5341011A (en) 1993-03-15 1994-08-23 Siliconix Incorporated Short channel trenched DMOS transistor
DE4309764C2 (de) 1993-03-25 1997-01-30 Siemens Ag Leistungs-MOSFET
GB9306895D0 (en) * 1993-04-01 1993-05-26 Philips Electronics Uk Ltd A method of manufacturing a semiconductor device comprising an insulated gate field effect device
KR960012585B1 (en) 1993-06-25 1996-09-23 Samsung Electronics Co Ltd Transistor structure and the method for manufacturing the same
US5349224A (en) * 1993-06-30 1994-09-20 Purdue Research Foundation Integrable MOS and IGBT devices having trench gate structure
US5371396A (en) * 1993-07-02 1994-12-06 Thunderbird Technologies, Inc. Field effect transistor having polycrystalline silicon gate junction
US5365102A (en) 1993-07-06 1994-11-15 North Carolina State University Schottky barrier rectifier with MOS trench
BE1007283A3 (nl) 1993-07-12 1995-05-09 Philips Electronics Nv Halfgeleiderinrichting met een most voorzien van een extended draingebied voor hoge spanningen.
US5420061A (en) 1993-08-13 1995-05-30 Micron Semiconductor, Inc. Method for improving latchup immunity in a dual-polysilicon gate process
JPH07122749A (ja) 1993-09-01 1995-05-12 Toshiba Corp 半導体装置及びその製造方法
JP3400846B2 (ja) 1994-01-20 2003-04-28 三菱電機株式会社 トレンチ構造を有する半導体装置およびその製造方法
US5429977A (en) 1994-03-11 1995-07-04 Industrial Technology Research Institute Method for forming a vertical transistor with a stacked capacitor DRAM cell
US5449925A (en) * 1994-05-04 1995-09-12 North Carolina State University Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
US5434435A (en) 1994-05-04 1995-07-18 North Carolina State University Trench gate lateral MOSFET
DE4417150C2 (de) 1994-05-17 1996-03-14 Siemens Ag Verfahren zur Herstellung einer Anordnung mit selbstverstärkenden dynamischen MOS-Transistorspeicherzellen
US5454435A (en) * 1994-05-25 1995-10-03 Reinhardt; Lisa Device for facilitating insertion of a beach umbrella in sand
US5405794A (en) 1994-06-14 1995-04-11 Philips Electronics North America Corporation Method of producing VDMOS device of increased power density
US5424231A (en) 1994-08-09 1995-06-13 United Microelectronics Corp. Method for manufacturing a VDMOS transistor
US5583368A (en) 1994-08-11 1996-12-10 International Business Machines Corporation Stacked devices
DE69525003T2 (de) 1994-08-15 2003-10-09 Siliconix Inc., Santa Clara Verfahren zum Herstellen eines DMOS-Transistors mit Grabenstruktur unter Verwendung von sieben Masken
US5581100A (en) 1994-08-30 1996-12-03 International Rectifier Corporation Trench depletion MOSFET
US5508542A (en) * 1994-10-28 1996-04-16 International Business Machines Corporation Porous silicon trench and capacitor structures
JP3708998B2 (ja) * 1994-11-04 2005-10-19 シーメンス アクチエンゲゼルシヤフト 電界効果により制御可能の半導体デバイスの製造方法
US5583065A (en) 1994-11-23 1996-12-10 Sony Corporation Method of making a MOS semiconductor device
US5674766A (en) 1994-12-30 1997-10-07 Siliconix Incorporated Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer
US6008520A (en) 1994-12-30 1999-12-28 Siliconix Incorporated Trench MOSFET with heavily doped delta layer to provide low on- resistance
US5597765A (en) 1995-01-10 1997-01-28 Siliconix Incorporated Method for making termination structure for power MOSFET
JPH08204179A (ja) 1995-01-26 1996-08-09 Fuji Electric Co Ltd 炭化ケイ素トレンチｍｏｓｆｅｔ
US5670803A (en) 1995-02-08 1997-09-23 International Business Machines Corporation Three-dimensional SRAM trench structure and fabrication method therefor
JP3325736B2 (ja) 1995-02-09 2002-09-17 三菱電機株式会社 絶縁ゲート型半導体装置
EP0726603B1 (en) 1995-02-10 1999-04-21 SILICONIX Incorporated Trenched field effect transistor with PN depletion barrier
JP3291957B2 (ja) 1995-02-17 2002-06-17 富士電機株式会社 縦型トレンチｍｉｓｆｅｔおよびその製造方法
US5595927A (en) 1995-03-17 1997-01-21 Taiwan Semiconductor Manufacturing Company Ltd. Method for making self-aligned source/drain mask ROM memory cell using trench etched channel
US5592005A (en) * 1995-03-31 1997-01-07 Siliconix Incorporated Punch-through field effect transistor
US5554552A (en) * 1995-04-03 1996-09-10 Taiwan Semiconductor Manufacturing Company PN junction floating gate EEPROM, flash EPROM device and method of manufacture thereof
US5744372A (en) 1995-04-12 1998-04-28 National Semiconductor Corporation Fabrication of complementary field-effect transistors each having multi-part channel
JPH08306914A (ja) 1995-04-27 1996-11-22 Nippondenso Co Ltd 半導体装置およびその製造方法
US5567634A (en) 1995-05-01 1996-10-22 National Semiconductor Corporation Method of fabricating self-aligned contact trench DMOS transistors
KR0143459B1 (ko) 1995-05-22 1998-07-01 한민구 모오스 게이트형 전력 트랜지스터
US6140678A (en) 1995-06-02 2000-10-31 Siliconix Incorporated Trench-gated power MOSFET with protective diode
US6049108A (en) 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
US5648670A (en) 1995-06-07 1997-07-15 Sgs-Thomson Microelectronics, Inc. Trench MOS-gated device with a minimum number of masks
GB9512089D0 (en) 1995-06-14 1995-08-09 Evans Jonathan L Semiconductor device fabrication
US5689128A (en) * 1995-08-21 1997-11-18 Siliconix Incorporated High density trenched DMOS transistor
US5629543A (en) 1995-08-21 1997-05-13 Siliconix Incorporated Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness
US5847464A (en) 1995-09-27 1998-12-08 Sgs-Thomson Microelectronics, Inc. Method for forming controlled voids in interlevel dielectric
US5705409A (en) 1995-09-28 1998-01-06 Motorola Inc. Method for forming trench transistor structure
JPH09102602A (ja) * 1995-10-05 1997-04-15 Nippon Telegr & Teleph Corp <Ntt> Ｍｏｓｆｅｔ
US5616945A (en) * 1995-10-13 1997-04-01 Siliconix Incorporated Multiple gated MOSFET for use in DC-DC converter
US5692569A (en) * 1995-10-17 1997-12-02 Mustad, Incorporated Horseshoe system
US5949124A (en) 1995-10-31 1999-09-07 Motorola, Inc. Edge termination structure
US6037632A (en) 1995-11-06 2000-03-14 Kabushiki Kaisha Toshiba Semiconductor device
US5780343A (en) 1995-12-20 1998-07-14 National Semiconductor Corporation Method of producing high quality silicon surface for selective epitaxial growth of silicon
US5637898A (en) 1995-12-22 1997-06-10 North Carolina State University Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
GB2309336B (en) 1996-01-22 2001-05-23 Fuji Electric Co Ltd Semiconductor device
DE59707158D1 (de) 1996-02-05 2002-06-06 Infineon Technologies Ag Durch feldeffekt steuerbares halbleiterbauelement
US6084268A (en) 1996-03-05 2000-07-04 Semiconductor Components Industries, Llc Power MOSFET device having low on-resistance and method
US5821583A (en) 1996-03-06 1998-10-13 Siliconix Incorporated Trenched DMOS transistor with lightly doped tub
DE19611045C1 (de) 1996-03-20 1997-05-22 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
EP0798785B1 (en) 1996-03-29 2003-12-03 STMicroelectronics S.r.l. High-voltage-resistant MOS transistor, and corresponding manufacturing process
US5895951A (en) * 1996-04-05 1999-04-20 Megamos Corporation MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches
US5770878A (en) 1996-04-10 1998-06-23 Harris Corporation Trench MOS gate device
US5767004A (en) 1996-04-22 1998-06-16 Chartered Semiconductor Manufacturing, Ltd. Method for forming a low impurity diffusion polysilicon layer
US5818084A (en) 1996-05-15 1998-10-06 Siliconix Incorporated Pseudo-Schottky diode
EP2043158B1 (en) 1996-07-19 2013-05-15 SILICONIX Incorporated Trench DMOS transistor with trench bottom implant
US5808340A (en) 1996-09-18 1998-09-15 Advanced Micro Devices, Inc. Short channel self aligned VMOS field effect transistor
DE19638438A1 (de) 1996-09-19 1998-04-02 Siemens Ag Durch Feldeffekt steuerbares, vertikales Halbleiterbauelement
JP2891205B2 (ja) 1996-10-21 1999-05-17 日本電気株式会社 半導体集積回路の製造方法
JP3397057B2 (ja) 1996-11-01 2003-04-14 日産自動車株式会社 半導体装置
US6207994B1 (en) 1996-11-05 2001-03-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6168983B1 (en) 1996-11-05 2001-01-02 Power Integrations, Inc. Method of making a high-voltage transistor with multiple lateral conduction layers
KR100233832B1 (ko) 1996-12-14 1999-12-01 정선종 반도체 소자의 트랜지스터 및 그 제조방법
US6011298A (en) 1996-12-31 2000-01-04 Stmicroelectronics, Inc. High voltage termination with buried field-shaping region
JPH10256550A (ja) 1997-01-09 1998-09-25 Toshiba Corp 半導体装置
KR100218260B1 (ko) 1997-01-14 1999-09-01 김덕중 트랜치 게이트형 모스트랜지스터의 제조방법
SE9700141D0 (sv) 1997-01-20 1997-01-20 Abb Research Ltd A schottky diode of SiC and a method for production thereof
JP3938964B2 (ja) 1997-02-10 2007-06-27 三菱電機株式会社 高耐圧半導体装置およびその製造方法
US5877528A (en) 1997-03-03 1999-03-02 Megamos Corporation Structure to provide effective channel-stop in termination areas for trenched power transistors
US6057558A (en) 1997-03-05 2000-05-02 Denson Corporation Silicon carbide semiconductor device and manufacturing method thereof
US5981354A (en) 1997-03-12 1999-11-09 Advanced Micro Devices, Inc. Semiconductor fabrication employing a flowable oxide to enhance planarization in a shallow trench isolation process
KR100225409B1 (ko) 1997-03-27 1999-10-15 김덕중 트렌치 디-모오스 및 그의 제조 방법
US6163052A (en) 1997-04-04 2000-12-19 Advanced Micro Devices, Inc. Trench-gated vertical combination JFET and MOSFET devices
US6281547B1 (en) 1997-05-08 2001-08-28 Megamos Corporation Power transistor cells provided with reliable trenched source contacts connected to narrower source manufactured without a source mask
JPH113936A (ja) 1997-06-13 1999-01-06 Nec Corp 半導体装置の製造方法
US6096608A (en) 1997-06-30 2000-08-01 Siliconix Incorporated Bidirectional trench gated power mosfet with submerged body bus extending underneath gate trench
US5907776A (en) 1997-07-11 1999-05-25 Magepower Semiconductor Corp. Method of forming a semiconductor structure having reduced threshold voltage and high punch-through tolerance
US6188093B1 (en) 1997-09-02 2001-02-13 Nikon Corporation Photoelectric conversion devices and photoelectric conversion apparatus employing the same
DE19740195C2 (de) 1997-09-12 1999-12-02 Siemens Ag Halbleiterbauelement mit Metall-Halbleiterübergang mit niedrigem Sperrstrom
DE19743342C2 (de) 1997-09-30 2002-02-28 Infineon Technologies Ag Feldeffekttransistor hoher Packungsdichte und Verfahren zu seiner Herstellung
KR100249505B1 (ko) 1997-10-28 2000-03-15 정선종 수평형 이중 확산 전력 소자의 제조 방법
US6337499B1 (en) 1997-11-03 2002-01-08 Infineon Technologies Ag Semiconductor component
US5943581A (en) 1997-11-05 1999-08-24 Vanguard International Semiconductor Corporation Method of fabricating a buried reservoir capacitor structure for high-density dynamic random access memory (DRAM) circuits
GB9723468D0 (en) 1997-11-07 1998-01-07 Zetex Plc Method of semiconductor device fabrication
US6081009A (en) 1997-11-10 2000-06-27 Intersil Corporation High voltage mosfet structure
US6429481B1 (en) 1997-11-14 2002-08-06 Fairchild Semiconductor Corporation Field effect transistor and method of its manufacture
US6426260B1 (en) 1997-12-02 2002-07-30 Magepower Semiconductor Corp. Switching speed improvement in DMO by implanting lightly doped region under gate
US5949104A (en) 1998-02-07 1999-09-07 Xemod, Inc. Source connection structure for lateral RF MOS devices
JP3641547B2 (ja) 1998-03-25 2005-04-20 株式会社豊田中央研究所 横型ｍｏｓ素子を含む半導体装置
US5897343A (en) 1998-03-30 1999-04-27 Motorola, Inc. Method of making a power switching trench MOSFET having aligned source regions
US5945724A (en) 1998-04-09 1999-08-31 Micron Technology, Inc. Trench isolation region for semiconductor device
US6150697A (en) 1998-04-30 2000-11-21 Denso Corporation Semiconductor apparatus having high withstand voltage
US6303969B1 (en) 1998-05-01 2001-10-16 Allen Tan Schottky diode with dielectric trench
US6063678A (en) 1998-05-04 2000-05-16 Xemod, Inc. Fabrication of lateral RF MOS devices with enhanced RF properties
DE19820223C1 (de) 1998-05-06 1999-11-04 Siemens Ag Verfahren zum Herstellen einer Epitaxieschicht mit lateral veränderlicher Dotierung
US6104054A (en) 1998-05-13 2000-08-15 Texas Instruments Incorporated Space-efficient layout method to reduce the effect of substrate capacitance in dielectrically isolated process technologies
US6015727A (en) 1998-06-08 2000-01-18 Wanlass; Frank M. Damascene formation of borderless contact MOS transistors
DE19828191C1 (de) 1998-06-24 1999-07-29 Siemens Ag Lateral-Hochspannungstransistor
KR100372103B1 (ko) 1998-06-30 2003-03-31 주식회사 하이닉스반도체 반도체소자의소자분리방법
US6054365A (en) 1998-07-13 2000-04-25 International Rectifier Corp. Process for filling deep trenches with polysilicon and oxide
US6156611A (en) 1998-07-20 2000-12-05 Motorola, Inc. Method of fabricating vertical FET with sidewall gate electrode
DE69818289T2 (de) 1998-07-23 2004-07-01 Mitsubishi Denki K.K. Verfahren zur Herstellung einer Halbleiteranordnung und dadurch erzeugbare Halbleiteranordnung
JP4253374B2 (ja) 1998-07-24 2009-04-08 千住金属工業株式会社 プリント基板のはんだ付け方法および噴流はんだ槽
JP2000056281A (ja) 1998-08-07 2000-02-25 Mitsubishi Electric Corp 光変調器とその製造方法
US6242770B1 (en) * 1998-08-31 2001-06-05 Gary Bela Bronner Diode connected to a magnetic tunnel junction and self aligned with a metallic conductor and method for forming the same
DE19839970C2 (de) 1998-09-02 2000-11-02 Siemens Ag Randstruktur und Driftbereich für ein Halbleiterbauelement sowie Verfahren zu ihrer Herstellung
US6316280B1 (en) 1998-09-07 2001-11-13 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor devices separated from a wafer
JP3382163B2 (ja) 1998-10-07 2003-03-04 株式会社東芝 電力用半導体装置
US7462910B1 (en) 1998-10-14 2008-12-09 International Rectifier Corporation P-channel trench MOSFET structure
DE19848828C2 (de) 1998-10-22 2001-09-13 Infineon Technologies Ag Halbleiterbauelement mit kleiner Durchlaßspannung und hoher Sperrfähigkeit
US5998833A (en) 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
US6194741B1 (en) 1998-11-03 2001-02-27 International Rectifier Corp. MOSgated trench type power semiconductor with silicon carbide substrate and increased gate breakdown voltage and reduced on-resistance
US6096629A (en) 1998-11-05 2000-08-01 Taiwan Semiconductor Manufacturing Company Uniform sidewall profile etch method for forming low contact leakage schottky diode contact
JP3951522B2 (ja) 1998-11-11 2007-08-01 富士電機デバイステクノロジー株式会社 超接合半導体素子
JP3799888B2 (ja) 1998-11-12 2006-07-19 富士電機デバイステクノロジー株式会社 超接合半導体素子およびその製造方法
US6291856B1 (en) 1998-11-12 2001-09-18 Fuji Electric Co., Ltd. Semiconductor device with alternating conductivity type layer and method of manufacturing the same
US6156606A (en) 1998-11-17 2000-12-05 Siemens Aktiengesellschaft Method of forming a trench capacitor using a rutile dielectric material
JP2000156978A (ja) 1998-11-17 2000-06-06 Fuji Electric Co Ltd ソフトスイッチング回路
US6084264A (en) 1998-11-25 2000-07-04 Siliconix Incorporated Trench MOSFET having improved breakdown and on-resistance characteristics
DE19854915C2 (de) 1998-11-27 2002-09-05 Infineon Technologies Ag MOS-Feldeffekttransistor mit Hilfselektrode
US6222229B1 (en) 1999-02-18 2001-04-24 Cree, Inc. Self-aligned shield structure for realizing high frequency power MOSFET devices with improved reliability
JP3751463B2 (ja) 1999-03-23 2006-03-01 株式会社東芝 高耐圧半導体素子
DE19913375B4 (de) 1999-03-24 2009-03-26 Infineon Technologies Ag Verfahren zur Herstellung einer MOS-Transistorstruktur
JP3417336B2 (ja) 1999-03-25 2003-06-16 関西日本電気株式会社 絶縁ゲート型半導体装置およびその製造方法
US6316806B1 (en) 1999-03-31 2001-11-13 Fairfield Semiconductor Corporation Trench transistor with a self-aligned source
US6188105B1 (en) 1999-04-01 2001-02-13 Intersil Corporation High density MOS-gated power device and process for forming same
TW425701B (en) 1999-04-27 2001-03-11 Taiwan Semiconductor Mfg Manufacturing method of stack-type capacitor
US6433385B1 (en) 1999-05-19 2002-08-13 Fairchild Semiconductor Corporation MOS-gated power device having segmented trench and extended doping zone and process for forming same
US6198127B1 (en) 1999-05-19 2001-03-06 Intersil Corporation MOS-gated power device having extended trench and doping zone and process for forming same
US6291298B1 (en) 1999-05-25 2001-09-18 Advanced Analogic Technologies, Inc. Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses
US6373098B1 (en) 1999-05-25 2002-04-16 Fairchild Semiconductor Corporation Trench-gated device having trench walls formed by selective epitaxial growth and process for forming device
US6191447B1 (en) 1999-05-28 2001-02-20 Micro-Ohm Corporation Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same
DE69938541D1 (de) 1999-06-03 2008-05-29 St Microelectronics Srl Leistungshalbleiteranordnung mit einer Randabschlussstruktur mit einem Spannungsteiler
CN1171318C (zh) 1999-06-03 2004-10-13 通用半导体公司 具有低导通电阻的高压功率金属氧化物半导体场效应晶体管
JP3851744B2 (ja) 1999-06-28 2006-11-29 株式会社東芝 半導体装置の製造方法
GB9917099D0 (en) 1999-07-22 1999-09-22 Koninkl Philips Electronics Nv Cellular trench-gate field-effect transistors
JP3971062B2 (ja) 1999-07-29 2007-09-05 株式会社東芝 高耐圧半導体装置
TW411553B (en) 1999-08-04 2000-11-11 Mosel Vitelic Inc Method for forming curved oxide on bottom of trench
JP4774580B2 (ja) 1999-08-23 2011-09-14 富士電機株式会社 超接合半導体素子
US6077733A (en) 1999-09-03 2000-06-20 Taiwan Semiconductor Manufacturing Company Method of manufacturing self-aligned T-shaped gate through dual damascene
US6566804B1 (en) 1999-09-07 2003-05-20 Motorola, Inc. Field emission device and method of operation
JP3507732B2 (ja) 1999-09-30 2004-03-15 株式会社東芝 半導体装置
US6222233B1 (en) 1999-10-04 2001-04-24 Xemod, Inc. Lateral RF MOS device with improved drain structure
US6103619A (en) 1999-10-08 2000-08-15 United Microelectronics Corp. Method of forming a dual damascene structure on a semiconductor wafer
JP4450122B2 (ja) 1999-11-17 2010-04-14 株式会社デンソー 炭化珪素半導体装置
US6184092B1 (en) 1999-11-23 2001-02-06 Mosel Vitelic Inc. Self-aligned contact for trench DMOS transistors
US6461918B1 (en) 1999-12-20 2002-10-08 Fairchild Semiconductor Corporation Power MOS device with improved gate charge performance
US6285060B1 (en) 1999-12-30 2001-09-04 Siliconix Incorporated Barrier accumulation-mode MOSFET
US6346469B1 (en) 2000-01-03 2002-02-12 Motorola, Inc. Semiconductor device and a process for forming the semiconductor device
JP2001192174A (ja) 2000-01-12 2001-07-17 Occ Corp 誘導巻取り装置
JP4765012B2 (ja) 2000-02-09 2011-09-07 富士電機株式会社 半導体装置及びその製造方法
US6376878B1 (en) 2000-02-11 2002-04-23 Fairchild Semiconductor Corporation MOS-gated devices with alternating zones of conductivity
GB0003184D0 (en) 2000-02-12 2000-04-05 Koninkl Philips Electronics Nv A semiconductor device and a method of fabricating material for a semiconductor device
US6274420B1 (en) 2000-02-23 2001-08-14 Advanced Micro Devices, Inc. Sti (shallow trench isolation) structures for minimizing leakage current through drain and source silicides
US6271100B1 (en) 2000-02-24 2001-08-07 International Business Machines Corporation Chemically enhanced anneal for removing trench stress resulting in improved bipolar yield
JP2001244461A (ja) 2000-02-28 2001-09-07 Toyota Central Res & Dev Lab Inc 縦型半導体装置
GB0005650D0 (en) 2000-03-10 2000-05-03 Koninkl Philips Electronics Nv Field-effect semiconductor devices
US6246090B1 (en) 2000-03-14 2001-06-12 Intersil Corporation Power trench transistor device source region formation using silicon spacer
AU5172001A (en) 2000-03-17 2001-10-03 Gen Semiconductor Inc Trench dmos transistor having a double gate structure
JP3636345B2 (ja) 2000-03-17 2005-04-06 富士電機デバイステクノロジー株式会社 半導体素子および半導体素子の製造方法
TW439176B (en) 2000-03-17 2001-06-07 United Microelectronics Corp Manufacturing method of capacitors
US6376315B1 (en) 2000-03-31 2002-04-23 General Semiconductor, Inc. Method of forming a trench DMOS having reduced threshold voltage
US6392290B1 (en) 2000-04-07 2002-05-21 Siliconix Incorporated Vertical structure for semiconductor wafer-level chip scale packages
JP4534303B2 (ja) 2000-04-27 2010-09-01 富士電機システムズ株式会社 横型超接合半導体素子
JP4240752B2 (ja) 2000-05-01 2009-03-18 富士電機デバイステクノロジー株式会社 半導体装置
US6509240B2 (en) 2000-05-15 2003-01-21 International Rectifier Corporation Angle implant process for cellular deep trench sidewall doping
DE10026924A1 (de) 2000-05-30 2001-12-20 Infineon Technologies Ag Kompensationsbauelement
US6479352B2 (en) 2000-06-02 2002-11-12 General Semiconductor, Inc. Method of fabricating high voltage power MOSFET having low on-resistance
JP3798951B2 (ja) 2000-06-07 2006-07-19 シャープ株式会社 回路内蔵受光素子、その製造方法および該受光素子を用いた光学装置
EP1170803A3 (en) 2000-06-08 2002-10-09 Siliconix Incorporated Trench gate MOSFET and method of making the same
US6472678B1 (en) 2000-06-16 2002-10-29 General Semiconductor, Inc. Trench MOSFET with double-diffused body profile
JP3833903B2 (ja) 2000-07-11 2006-10-18 株式会社東芝 半導体装置の製造方法
US6555895B1 (en) 2000-07-17 2003-04-29 General Semiconductor, Inc. Devices and methods for addressing optical edge effects in connection with etched trenches
US6921939B2 (en) 2000-07-20 2005-07-26 Fairchild Semiconductor Corporation Power MOSFET and method for forming same using a self-aligned body implant
JP2002043571A (ja) 2000-07-28 2002-02-08 Nec Kansai Ltd 半導体装置
US6437386B1 (en) 2000-08-16 2002-08-20 Fairchild Semiconductor Corporation Method for creating thick oxide on the bottom surface of a trench structure in silicon
US6472708B1 (en) 2000-08-31 2002-10-29 General Semiconductor, Inc. Trench MOSFET with structure having low gate charge
US6355501B1 (en) 2000-09-21 2002-03-12 International Business Machines Corporation Three-dimensional chip stacking assembly
FR2816113A1 (fr) 2000-10-31 2002-05-03 St Microelectronics Sa Procede de realisation d'une zone dopee dans du carbure de silicium et application a une diode schottky
EP1205980A1 (en) 2000-11-07 2002-05-15 Infineon Technologies AG A method for forming a field effect transistor in a semiconductor substrate
US6362112B1 (en) 2000-11-08 2002-03-26 Fabtech, Inc. Single step etched moat
US6608350B2 (en) 2000-12-07 2003-08-19 International Rectifier Corporation High voltage vertical conduction superjunction semiconductor device
US6677641B2 (en) * 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US7345342B2 (en) * 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6713813B2 (en) 2001-01-30 2004-03-30 Fairchild Semiconductor Corporation Field effect transistor having a lateral depletion structure
CN1223008C (zh) 2001-02-21 2005-10-12 三菱电机株式会社 半导体器件及其制造方法
US6683346B2 (en) 2001-03-09 2004-01-27 Fairchild Semiconductor Corporation Ultra dense trench-gated power-device with the reduced drain-source feedback capacitance and Miller charge
KR100393201B1 (ko) 2001-04-16 2003-07-31 페어차일드코리아반도체 주식회사 낮은 온 저항과 높은 브레이크다운 전압을 갖는 고전압수평형 디모스 트랜지스터
DE10214160B4 (de) * 2002-03-28 2014-10-09 Infineon Technologies Ag Halbleiteranordnung mit Schottky-Kontakt
JP3312905B2 (ja) 2001-06-25 2002-08-12 株式会社リコー 画像形成装置
JP2003017701A (ja) * 2001-07-04 2003-01-17 Denso Corp 半導体装置
US20030015756A1 (en) 2001-07-23 2003-01-23 Motorola, Inc. Semiconductor structure for integrated control of an active subcircuit and process for fabrication
US6875671B2 (en) 2001-09-12 2005-04-05 Reveo, Inc. Method of fabricating vertical integrated circuits
US6465304B1 (en) 2001-10-04 2002-10-15 General Semiconductor, Inc. Method for fabricating a power semiconductor device having a floating island voltage sustaining layer
AU2003228073A1 (en) * 2002-05-31 2003-12-19 Koninklijke Philips Electronics N.V. Trench-gate semiconductor device,corresponding module and apparatus ,and method of operating the device
US6878994B2 (en) * 2002-08-22 2005-04-12 International Rectifier Corporation MOSgated device with accumulated channel region and Schottky contact
JP4158453B2 (ja) 2002-08-22 2008-10-01 株式会社デンソー 半導体装置及びその製造方法
GB0229212D0 (en) * 2002-12-14 2003-01-22 Koninkl Philips Electronics Nv Method of manufacture of a trench semiconductor device
DE10259373B4 (de) 2002-12-18 2012-03-22 Infineon Technologies Ag Überstromfeste Schottkydiode mit niedrigem Sperrstrom
JP4166102B2 (ja) * 2003-02-26 2008-10-15 トヨタ自動車株式会社 高耐圧電界効果型半導体装置
GB0312512D0 (en) * 2003-05-31 2003-07-09 Koninkl Philips Electronics Nv Termination structures for semiconductor devices and the manufacture thereof
JP4799829B2 (ja) * 2003-08-27 2011-10-26 三菱電機株式会社 絶縁ゲート型トランジスタ及びインバータ回路
CN103199017B (zh) * 2003-12-30 2016-08-03 飞兆半导体公司 形成掩埋导电层方法、材料厚度控制法、形成晶体管方法
US7405452B2 (en) 2004-02-02 2008-07-29 Hamza Yilmaz Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics
US6951112B2 (en) 2004-02-10 2005-10-04 General Electric Company Methods and apparatus for assembling gas turbine engines
US20050199918A1 (en) 2004-03-15 2005-09-15 Daniel Calafut Optimized trench power MOSFET with integrated schottky diode
JP4176734B2 (ja) * 2004-05-14 2008-11-05 株式会社東芝 トレンチｍｏｓｆｅｔ
US7501702B2 (en) * 2004-06-24 2009-03-10 Fairchild Semiconductor Corporation Integrated transistor module and method of fabricating same
DE102004057235B4 (de) 2004-11-26 2007-12-27 Infineon Technologies Ag Vertikaler Trenchtransistor und Verfahren zu dessen Herstellung
CN102867825B (zh) 2005-04-06 2016-04-06 飞兆半导体公司 沟栅场效应晶体管结构及其形成方法
KR101254835B1 (ko) 2005-05-26 2013-04-15 페어차일드 세미컨덕터 코포레이션 트랜치-게이트 전계 효과 트랜지스터 및 그 형성 방법
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US7768075B2 (en) * 2006-04-06 2010-08-03 Fairchild Semiconductor Corporation Semiconductor die packages using thin dies and metal substrates

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801417A (en) * 1988-05-17 1998-09-01 Advanced Power Technology, Inc. Self-aligned power MOSFET device with recessed gate and source
CN1677687A (zh) * 2004-03-29 2005-10-05 三洋电机株式会社 半导体装置及其制造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开平9-283535A 1997.10.31

Also Published As

Publication number Publication date
TWI443826B (zh) 2014-07-01
TW200742079A (en) 2007-11-01
US7446374B2 (en) 2008-11-04
KR20090003306A (ko) 2009-01-09
DE112007000700B4 (de) 2018-01-11
US20070221952A1 (en) 2007-09-27
JP2009531836A (ja) 2009-09-03
US20090035900A1 (en) 2009-02-05
KR101361239B1 (ko) 2014-02-11
AT505583A2 (de) 2009-02-15
US7713822B2 (en) 2010-05-11
DE112007000700T5 (de) 2009-01-29
WO2007112187A2 (en) 2007-10-04
CN101454882A (zh) 2009-06-10
WO2007112187A3 (en) 2008-04-17

Similar Documents

Publication Publication Date Title
CN101454882B (zh) 具有集成肖特基二极管的高密度沟槽fet及制造方法
CN101889334B (zh) 具有集成肖特基的高密度fet
US9842925B2 (en) Insulated gate semiconductor device having a shield electrode structure and method
US7582519B2 (en) Method of forming a trench structure having one or more diodes embedded therein adjacent a PN junction
US6351018B1 (en) Monolithically integrated trench MOSFET and Schottky diode
CN101719495B (zh) 半导体器件及其制造方法
US7642597B2 (en) Power semiconductor device
US7843004B2 (en) Power MOSFET with recessed field plate
KR100846158B1 (ko) 집적 회로, 및 이러한 집적 회로의 제조 방법
US20160027880A1 (en) Vertical power mosfet having planar channel and its method of fabrication
US9859449B2 (en) Method of forming trench semiconductor device having multiple trench depths
CN102569298B (zh) 包括二极管的半导体器件
WO2007133426A2 (en) Enhancing schottky breakdown voltage (bv) without affecting an integrated mosfet-schottky device layout
WO2018237355A1 (en) VERTICAL RECTIFIER WITH ADDED INTERMEDIATE REGION
Ma et al. New trench MOSFET technology for DC-DC converter applications
US10388801B1 (en) Trench semiconductor device having shaped gate dielectric and gate electrode structures and method
US11004839B1 (en) Trench power MOSFET with integrated-schottky in non-active area
JP2010010583A (ja) 半導体装置及びその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant