CN101136321A - 具有减少基片上聚合物沉积部件的等离子体装置以及减少聚合物沉积的方法 - Google Patents

具有减少基片上聚合物沉积部件的等离子体装置以及减少聚合物沉积的方法 Download PDF

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CN101136321A
CN101136321A CNA2007101532797A CN200710153279A CN101136321A CN 101136321 A CN101136321 A CN 101136321A CN A2007101532797 A CNA2007101532797 A CN A2007101532797A CN 200710153279 A CN200710153279 A CN 200710153279A CN 101136321 A CN101136321 A CN 101136321A
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J·东
E·H·伦兹
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Abstract

一种可调的RF连接环，可以减小真空处理室中基片和热边缘环之间的垂直缝隙。缝隙的减小减少了聚合物在基片和静电吸盘上的沉积，改进了晶片的处理。

Description

具有减少基片上聚合物沉积部件的等离子体装置以及减少聚合物沉积的方法
本发明是2003年8月28日提出的、名称为“具有减少基片上聚合物沉积部件的等离子体装置以及减少聚合物沉积的方法”的发明专利申请No.038222663(PCT/US2003/027055)的分案申请。
发明领域
本发明涉及一种减少基片和基片支承件上聚合物沉积的装置和方法，本发明具体涉及基片托架和基片之间间隙的调节，以便降低基片托架露出表面和基片底表面上的聚合物沉积。
先有技术说明
真空处理室一般用于在底衬上化学蒸发沉积(CVD)材料和刻蚀材料，方法是将处理气体输送到真空室，并在该气体上加上RF场(高频场)。在共有美国专利No.4340462、4948458和5200232中，公开平行板电感耦合等离子装置(TCPTM，也称为ICP)和电子回旋共振(ECR)反应器的例子。该基片在处理期间，由基片托架固定就位在真空室中。常规的基片托架包括机械夹具和静电夹具(ESC)。在共有的美国专利No.5262029和共有美国专利No.5671116中，提出了机械夹具和ESC基片托架的例子。形式为电极的底基片托架可以将高频功率输送到真空室中，如美国专利No.4579618所述。
在氧化物刻蚀工艺中，刻蚀的基片一般包括底层、要刻蚀的氧化物层以及在该氧化物层顶上形成的光敏抗蚀胶。该氧化物层可以是SiO2、BPSG、PSG，中的一种，或者其他的氧化物材料。该底层可以是Si、TiN、硅化物，或者其他的底层材料或者基片材料。在处理基片期间，在真空室表面上可能发生不需要的聚合物沉积。例如，在氧化物刻蚀时，处理室可能加热到80℃以上，因而发生反应，其中CF3形成CF2和HF。CF2的形成导致处理室表面上聚合物沉积的增加。
在等离子体反应器中刻蚀基片例如半导体基片时，聚合物可能沉积在处理室冷却的露出表面上，该表面包括基片支承件例如静电吸盘的露出表面以及围绕基片支承件的其他表面例如绝热的环形盖/聚焦环。如果沉积物削落，并落在静电吸盘的顶表面上，则这种积层会引起问题。在吸盘顶表面上这些杂质可能妨碍吸盘正确地牢固保持吸盘的作用。另外，这些杂质还可能使输送到晶片下面的作为冷却介质的氦气，从晶片的下面漏出，因而降低了晶片的冷却。这些杂质也可能沉积在晶片本身上，负面影响该晶片本身。
可以在接连的各个晶片处理之间，进行的清洁步骤，除去聚合物的沉积物。一般说来，可以将氧气注入到处理室中，点燃等离子体，使氧气与沉积的聚合物发生反应，用这种方法进行清洁，达到处理室的氧气侵蚀性清洁。
这种处理室的氧气侵蚀性清洁是不希望的，因为它增加了处理晶片的操作时间，降低了系统的生产率。另外，氧气侵蚀性清洁缩短了处理室中部件的寿命，因为离子轰击这些部件。因此希望进行基片的处理，而不需要氧气侵蚀性的清洁操作，由此可以缩短操作周期，并增加处理室部件的寿命。
图1示出真空处理室10的一个例子。该真空处理室10包含基片托架12，该托架包括电极，该电极将RF偏压加在托架支承的基片上。该基片托架12包括固定基片的静电夹具14。放在静电夹具14上的基片最好由配置在基片和静电夹具之间的氦气背面冷却装置(未示出)冷却。环16包围静电夹具14，该环16可以是陶瓷的聚焦环；聚焦环、连接环和边缘环的组合环；或者其他的组合环。
真空处理室10包括在处理室中保持高密度(例如1011-1012离子/cm3)等离子体的能源装置，例如天线18(例如平面型的螺纹线圈或者其他适合的装置)，该天线配置在处理室的上面，由适当的RF电源供电。适当的RF阻抗匹配电路将RF电感耦合到处理室10中，从而得到高密度的等离子体。该处理室还包括适当的抽真空装置，使处理室的内部保持要求的压力(例如低于50毫乇，通常为1-20毫乇)，在天线18和处理室10的内部之间配置绝缘窗20(例如均匀厚度的石英、氧化铝、氮化硅等的平板)，该绝缘窗20在处理室10的顶部形成真空室的壁。在绝缘窗的下面配置绝缘气体分配板，这种板普通称为喷淋头22，这种分配板包括许多开孔例如圆形孔(未示出)，用于将气源供应的处理气体输送到处理室10中。然而可以省去这种气体分配板22，并且可以采用其他装置例如气体环等将处理气体输送到处理室中。
在处理室中可能发生聚合物沉积的一个区域是支承在静电吸盘上的晶片14和围绕环16之间的窄缝隙30。具体是，缝隙30形成在晶片边缘的下面，该晶片悬在围绕环的上面。该缝隙30是为制造公差、热膨胀和部件的损耗准备的。然而在处理室10中的处理气体和易挥发的反应副产物可能会漂移到缝隙30中，造成不希望的聚合物沉积在缝隙中，沉积在晶片的下侧边缘上，这些沉积物可能削落，造成晶片和/或者处理室的污染。
图2是静电吸盘14′和围绕环外部的放大横截面图，该围绕环包括聚焦环16、连接环40和热边缘环42。
如图3放大图所示，当半导体晶片形式的基片S放在静电吸盘14′上，并用适当的静电固定力固定就位时，在基片S的悬着的边缘和在热边缘环42上形成的沟槽44之间便形成小的垂直缝隙30′。这种垂直缝隙30′设计成可以防止基片S悬边被升高，由此避免降低由静电吸盘14′作用的固定力。然而这种附加的垂直缝隙30′造成聚合物沉积的另一种可能性，这种聚合物积层可能削落下来，污染基片S或者静电吸盘14′。
因此需要减小热边缘环42或者其他围绕环和基片悬边之间的垂直缝隙30′。
发明概要
本发明涉及一种装置，用于调节围绕基片支承件的围绕环和基片之间的缝隙。
按照本发明的一个方面，等离子体处理装置包括：处理室；电源，该电源将处理室中内部的处理气体激发成等离子体状态，以便处理基片；基片支承件，该支承件将基片支承在处理室的内部，该支承件具有上表面；围绕基片支承件的上部环，在基片放在基片支承件上时，该上部环的一部分在基片的下面延伸；围绕基片支承件的连接环，该连接环具有相对于第二环转动的第一环，从而可以调节连接环的高度和调节上部环和基片之间的缝隙。
按照本发明的第一方面，等离子体处理装置包括：处理室；处理气体，该气体将处理室内部中的处理气体激发成等离子体状态，以便处理基片；基片支承件，该支承件将基片支承在处理室的内部，该基片支承件具有上表面；上部环，围绕基片支承件，在基片配置在基片支承件上时，该上部环的一部分在基片的下面延伸；连接环，围绕基片支承件，该连接环具有可相对于第二环转动的第一环，从而可以调节连接环的高度和调节上部环和基片之间的缝隙。
按照本发明的再一方面，降低等离子体处理系统中基片支承件上聚合物沉积的方法包括以下步骤：形成调节机构，用于调节等离子体处理装置基片和围绕环之间的缝隙，并调节基片和围绕环之间的缝隙，调节方法是，使调节机构的第一环相对于第二环转动。
附图的简要说明
下面参照示于附图中的优选实施例详细说明本发明，在这些附图中相同的部件具有相同的编号，这些附图是：
图1是真空处理室的横截面图；
图2是图1所示一部分的放大横截面图，示出静电吸盘和围绕环；
图3是图2所示部分A的放大横截面图；
图4是本发明真空处理室一部分的放大横截面图，该部分包括可调节的连接环；
图5是图4所示可调节连接环的分解示意透视图；
图6是静电吸盘和聚焦环一部分的放大横截面图，示出聚焦环和基片之间的间隙。
发明的详细说明
图4示出本发明一个实施例的真空处理室基片支承件的一部分。图4所示的基片支承件100包括静电吸盘102、聚焦环104、连接环106和热边缘环108。
如等离子体处理技术人员周知的，围绕静电吸盘的环包括聚焦环104、连接环106和热边缘环108，这些环有利于使高频感应等离子区域中的离子聚焦在基片的表面上，以便提高处理的均匀性，特别是提高基片边缘的处理均匀性。这是因为当RF功率加在基片保持吸盘102上时，在基片和底部电极的上面便形成等位场线。这些场线在高频操作期间不是静止的，而是变化的。时间平均场造成大部分等离子体是正的，而基片和静电吸盘的表面是负的。由于几何结构的因素，这些场线在基片边缘是不均匀的。该聚焦环、连接环和热边缘环有助于利用等离子体和激发电极(例如加上RF的吸盘)之间的电容作用，使大部分RF通过基片耦合到位于上面的等离子体。
热边缘环108叠加在可调RF连接环106上。该热边缘环108是围绕静电吸盘102的一种牺牲性边缘环。该热边缘环108是可替换的部件，该部件在处理基片期间容易受到高温作用，因此称为热边缘环。该热边缘环108可以用导电的电极材料例如SiC和硅制造，或者用绝缘材料例如石英制造。改变热边缘环的材料，便可以调节等离子体的耦合程度，从而在处理基片的外部分上形成要求的局部“边缘”刻蚀速度。具有较低电容阻抗的SiC一般比硅形成更快的边缘刻蚀速度。石英和其他绝缘材料对边缘刻蚀速度影响较小。
在说明的实施例中，如图6所示，缝隙130形成在基片S的上悬边缘和硅作的热边缘环108之间。该缝隙130具有由可调RF连接环106控制的垂直距离d。该可调RF连接环106能够控制该缝隙的垂直距离d，方法是使硅作的抗热边缘环108适当地沿垂直方向移动。应当注意到，垂直方向是大体平行于Y轴的任何方向，如图1和6所示。
按照本发明的一个实施例，可调RF连接环106可以活动地支承硅作的热边缘环108。该可调RF连接环106对硅作的抗热边缘环108提供机械支承，同时能将缝隙距离d控制在规定的范围内。在本发明的一个方面中，该可调RF连接环106能够形成缝隙，该有关缝隙的距离d在约0.5密尔-小于6密尔之间。
在说明的实施例中，该可调RF连接环106包括两个环110和112，如图5所示。第一环110或者顶部环包括三个突出部114，该突出部沿平行于环Y轴的方向从该环伸出。第二环112或者底部环包括三组有多个级的台阶116，这些台阶沿着环的外周配置。第一环110相对于第二环112顺时针转动将会降低连接环106的总高度，因而可以调节基片和热边缘环108之间的缝隙。
在说明的实施例中，该可调节器连接环106最好包括分级的台阶116，该分级的台阶的高度增量约在0.0001-0.01英寸之间变化比较好，最好约为0.001英寸。虽然所示实施例中，在三组台阶中各组台阶包括六个分级的台阶116，但是还可以应用其他数目的台阶，这取决于调节量和要求调节的刻度量。按照另一实施例，可以配置12个分级台阶116，以便进行12种高度调节。
在说明的实施例中，可调连接环106的顶部环110包括突出部114，该突出部的高度约等于三组多个分级台阶中一个分级台阶所有台阶116的总高度。在优选实施例中，该突出部114的高度约为0.012英寸。在说明的实施例中，该可调连接环106可以用石英制造。
本发明的可调RF连接环106可以按许多单独台高准确调节基片S和热边缘环108之间的缝隙130。该连接环106可以使操作者在处理各个基片之间的任何时间，或者在建立真空处理室期间，重新调节该连接环。该RF连接环106还可以确保在基片的所有边缘部分均匀地调节热边缘环108，并且使连接环的整个表面基本上保持水平。
该可调RF连接环106可以装在新的真空处理室中，或者用来改造现有真空处理室，以便使热边缘环108具有可调性。
可以容易地安装和调节可调的RF连接环106，如下所述。先将连接环106的底环112放在静电吸盘102的台阶上，使许多分级的台阶116面朝上。然后将顶环110放在底部环112上，使三个突出部114分别配置在分级台阶的最高台阶上。随后将热边缘环108放在装好的连接环106的顶部，并用测量装置测量该缝隙。测量装置的一个例子，是垂直支柱刻度指示器，该指示器放在基片保持吸盘102上，可以测量从吸盘顶面到热边缘环108边缘顶面的垂直距离。该缝隙130最好沿静电吸盘分开90°的角度进行测量。并在热边缘环108接近静电吸盘102的位置读取测量值。由于热边缘环的损耗正好位于基片边缘的外面，所以最靠近吸盘102的热边缘环108的区域应当是热边缘环槽中最高的地方。测量值一般显示，热边缘环108高于静电吸盘102，并且需要向下调节该热边缘环。随后取下该热边缘环108。然后顺时针转动顶部环110，调节连接环106，由此降低连接环的高度。然后换上热边缘环108，并进行重复调节，直至得到最小的缝隙距离d。
按照本发明的一个优选实施例，连接环106的环110和112包括锁定部件(未示出)，该锁定部件可以将这些环锁定在准直的径向位置。锁定机构的一个例子包括在顶部环110上的锁销，该锁销可以与底部连接环112各个台阶上形成的槽相互锁合。
还应当看出，在具体的系统中，可以根据吸盘102、基片和/或者其他部件的配置，改变聚焦环104、连接环106和热边缘环108的具体形状。图4-6示出围绕吸盘的环的实际形状，这只作为例示，完全不受限制。虽然已经用配置成可以调节热边缘环的连接环说明本发明，但是也可以用连接环调节其他环。
虽然已参考优选实施例详细说明要本发明，但是技术人员可以明显看出，可以进行各种改变和改型，并可以应用等效部件，而不违背本发明的范围。

Claims (18)

1.一种在等离子体处理装置中调节基片和围绕环之间缝隙的方法，包括：
将连接环放置到在等离子体处理装置中用于支承基片的基片支承件上，该连接环包括：第一环，其具有至少三个突出部，所述突出部沿平行于连接环轴线的方向从第一环突出；和第二环，其具有至少三组许多台阶，所述台阶设置用来接收所述至少三个突出部中的每个突出部；以及
使第一环相对于第二环转动，以调节第一环和第二环的总厚度。
2.如权利要求1所述的方法，还包括将围绕环放置到连接环上。
3.如权利要求1所述的方法，其特征在于，每个台阶均具有约为0.001英寸的调节高度。
4.如权利要求1所述的方法，其特征在于，所述第一环和第二环由石英制成，且所述围绕环是热边缘环。
5.如权利要求1所述的方法，还包括将基片放置在基片支承件上，其特征在于，所述基片支承件包括一个加有RF功率的吸盘，并且所述围绕环和连接环将RF通过基片耦合到位于上面的等离子体。
6.如权利要求1所述的方法，其特征在于，所述第二环的每一组台阶包括多个具有分级高度的台阶。
7.如权利要求1所述的方法，其特征在于，在第一环相对于第二环转动期间，该第一环接触第二环。
8.如权利要求1所述的方法，其特征在于，由操作者来使所述第一环相对于第二环转动。
9.如权利要求1所述的方法，其特征在于，所述围绕环是上部环，其包括在基片下面延伸的一部分；并且使第一环相对于第二环转动，以调节基片下表面与所述在基片下面延伸的上部环那部分的上表面之间的距离。
10.如权利要求1所述的方法，还包括：把基片放置到基片支承件上；以及激发在等离子体处理装置中的处理气体以产生等离子体，并用该等离子体来处理基片。
11.一种在等离子体处理装置中安装和调节连接环的方法，包括：
将连接环放到等离子体处理装置中的基片支承件上，该连接环包括第一环和第二环；
将第三环放到连接环上；
测量从第三环顶表面到基片支承件底表面的缝隙；
移走第三环；以及
使第一环相对于第二环转动，以调节所述缝隙。
12.如权利要求11所述的方法，还包括，在所述转动之后：
将第三环放到连接环上；
测量从所述第三环表面到所述基片支承件表面的缝隙；以及
选择地重复所述移走第三环和使第一环相对于第二环转动，以重新调节所述缝隙。
13.如权利要求12所述的方法，其特征在于，
第三环包括在支承于基片支承件表面上的基片下面延伸的一部分，且所述缝隙是从该部分的顶表面到所述基片支承件表面的距离；
第一环包括沿着与连接环轴线平行的方向从第一环伸出的多个突出部；
第二环包括多组由多个台阶构成的台阶组，所述台阶设置用于接收每个所述突出部；以及
使第一环相对于第二环转动，以调节第一环和第二环的总厚度。
14.如权利要求11所述的方法，还包括：把基片放置到基片支承件上；以及激发在等离子体处理装置中的处理气体以产生等离子体，并用该等离子体来处理基片。
15.如权利要求11所述的方法，还包括向基片支承件供应RF功率，以及通过连接环来把RF功率耦合到等离子体。
16.如权利要求14所述的方法，其特征在于，所述第三环是硅边缘环，其具有位于基片下面的一部分。
17.如权利要求14所述的方法，其特征在于，所述处理包括等离子刻蚀半导体晶片。
18.如权利要求11所述的方法，还包括采用平面型天线来产生等离子体。
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ATE527679T1 (de) 2011-10-15

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