1。乙乙I1. B2I
經濟部智慧財產局員工消費合作社印製 發明背景 本發明的發明領域係相關於一電漿產生裝置。 電漿產生裝置係包含一陽極及一陰極，在一包含 ~放射氣體，或氣體混合物且在減壓的可控制環境内 該陽極及陰極彼此間隔開。當足夠的熱與電壓作用到 該兩電極之間時，在氣體内產生電子放射，而導致放 射及輻射。通常，所放射的波長主要在u ¥或¥11 V 最好。 如在磁場顯示器的習知技術的領域，可參見美國 專利 5,705,886，5,663,61 1 及歐洲專利 EP—A—〇 764 965 〇 依據本發明的電漿產生裝置使用一由寬頻帶間隙 材料或包含寬頻帶間隙材料的陰極，其中該寬頻帶間 隙材料的能帶隙大於2 e V，該材料如摻雜的鑽石， A 1 N，G a N或一A iGainN合金。對於鑽石 :項特定適當的摻雜方式係應用氮，硫磺，磷或硼及 氮共同摻雜，而對於A 1N，Ga N或一A1 “ j η N合金之適當摻雜方法為矽，辞或矽及辞的共同摻 雜。可以應用化學蒸汽摻雜（CVD)，濺射，分子東 磊标或混合的蒸汽化學蒸發方法，例·如或其他的 大里aa體生產技術’且可以使用例如電阻性加敎或電 感性加熱（A C或RF)直接或間接加熱。可在陽極 及陰極之間作用一有效電壓，使得從陰極中放射出電 子，其中主要為場放射。與金屬陰極電極比對下，在 依據本發明之裝置巾陰極的離子轟擊可以增強電子的 2 本紙張尺度刺㈣S家標準（CNS)A4規格（210 X 297公楚）_ --------I - IIIII — — ^--------- (請先閱讀背面之注意事項*填寫本頁) 五 經濟部智慧財產局員工消費合作社印製 力者，表示該鑽石有很大的可能性可以使用在電子應 用上。 μ 表1Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics. BACKGROUND OF THE INVENTION The field of the invention relates to a plasma generating device. The plasma generating device includes an anode and a cathode, and the anode and the cathode are spaced apart from each other in a controlled environment containing ~ a radiant gas, or a gas mixture. When sufficient heat and voltage are applied between the two electrodes, electrons are emitted in the gas, resulting in radiation and radiation. Generally, the emitted wavelength is mainly at u ¥ or ¥ 11 V. For example, in the field of the conventional technology of magnetic field display, see US Patent 5,705,886, 5,663,61 1 and European Patent EP-A-0764 965. The plasma generating device according to the present invention uses a wide-band gap material or a broadband A cathode with a gap material, wherein the energy gap of the wide band gap material is greater than 2 e V, such as doped diamond, A 1 N, Ga N or an A iGainN alloy. For diamond: The specific appropriate doping method is to use nitrogen, sulfur, phosphorus or boron and nitrogen together, and the appropriate doping method for A 1N, Ga N or an A1 "j η N alloy is silicon, or Co-doping of silicon and silicon. Chemical vapor doping (CVD), sputtering, molecular vaporization or mixed vapor chemical evaporation methods can be applied, such as, for example, or other Dali aa volume production techniques' and can use, for example, resistors Additive heating or inductive heating (AC or RF) direct or indirect heating. An effective voltage can be applied between the anode and the cathode, so that electrons are emitted from the cathode, mainly field radiation. Compared with the metal cathode electrode The ion bombardment at the cathode of the device according to the present invention can enhance the electrons of 2 paper-size papers (CNS) A4 specification (210 X 297 cm) _ -------- I-IIIII — — ^ --------- (Please read the notes on the back first * Fill in this page) The person who printed in the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs said that the diamond has a great possibility to be used in electronics Application: μ Table 1
本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 〜------ B7____ 發^說明（2) 一次放射。 與大部份的其他材料比較下，鑽石實.際特性的大 、、均表不對於給定性質之已知值的最小或最大最好。 乂鑽石為電子裝置之形狀.的功效係由這些最大及最小 值中選擇的結合而定。下表1列出鑽石中選擇的性 質，其與電子應用相當者。與單晶大鑽石具有特性的 CVD鑽石其同時可以具有商業上大量生產之潛在能 I ΙΙΙΙΙΙ1ΙΙΙΙ — - I I I 1 I I I ^ «III III — — (請先閱讀背面之注意事項再填寫本頁) 發明說明（3 ) 鑽石中最引人注目的性質即所謂其（丄丄丄）面 的負電子親合力（NE A )。此低的電子親合力將導致 在低至〇 5 V / u m的場下，鑽石薄膜放射電 子:不只（1 1 1 )表面存在N E A，而且可以防止 曝路在氧原子，氫原子，氣體或水中時對於陰極特性 所產生的危害。（1 1丄）定向的鑽石尖端具有低的放 射降伏而對於放射裝置則具有較長的使用年限。鑽石 為間接旎τ隙半導體，而能最小的能量位在（1 1 1 ) 方向，且其鑽石的放射密度將超過大部份半導體1〇 倍（106A/cm2)。已知在（111)面電子的切 向排斥幾為單-能量，且此性能在真空微電子中在減 少電子束的雜訊下相當有用。在鑽石中電子及電洞之 大的低漂移速度超越其他的材料。電子的遷移率超過 矽的遷移率，且電洞的遷移率超過鍺的遷移率。由於 超高介電強度，高導熱率，及低輻射補獲截面及未超 越電何載體速度所導致之高輻射硬度的結合，對於高 功率，鬲性能之電漿產生陰極的真值圖虹e Μ merit)估計可以與金屬者相當，甚至更好。 依據本發明，本發明提供一種包含一陽極及一陰 極的電漿產生裝置’該陰極由寬頻帶間隙材料所製造 而成，或者是包含寬頻帶間隙材料，該陽極呈管狀或 至少與該陰極軸向間隔，而且至少該陽極的主要部位 沒有包圍該陰極，且有一絕緣鞘體包封該陰極，該裝 A7 _________ B7____ 五、發明說明（4 ) 置適於配置在一塗覆室内。 ^好，陽極中沒有任何部位包封該陰極。 最好.該材料的能帶隙大於2 e V。 5亥陰極的材料係選自下列各項中至少一項，包 ’摻雜的鑽石，或c V D摻雜的鑽石，或G a N，This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) A7 ~ ------ B7____ Issue ^ Instruction (2) One emission. Compared with most other materials, the large and small properties of diamonds show that the minimum or maximum value for a given value of a given property is best.乂 Diamond is the shape of an electronic device. The efficacy is determined by the combination of these maximum and minimum values. Table 1 below shows the selected properties of diamonds, which are comparable to electronic applications. CVD diamonds with characteristics of single crystal large diamonds can also have the potential for commercial mass production I ΙΙΙΙΙΙΙ1ΙΙΙΙ —-III 1 III ^ «III III — — (Please read the precautions on the back before filling out this page) Invention Description ( 3) The most striking property of diamond is the so-called negative electron affinity (NE A) of its (丄 丄 丄) face. This low electron affinity will cause the diamond film to emit electrons in a field as low as 0.05 V / um: Not only (NEA) is present on the surface, but it can prevent exposure to oxygen, hydrogen, gas or water Hazard to the characteristics of the cathode. (11 1 丄) Oriented diamond tip has low radiation drop and long life for radiation devices. A diamond is an indirect 旎 τ gap semiconductor, and its minimum energy is in the (1 1 1) direction, and the diamond's radiation density will exceed that of most semiconductors by 10 times (106A / cm2). It is known that the tangential repulsion of the electrons in the (111) plane is almost single-energy, and this property is quite useful in reducing the noise of electron beams in vacuum microelectronics. The large low drift speed of electrons and holes in diamonds surpasses other materials. The mobility of electrons exceeds the mobility of silicon, and the mobility of holes exceeds the mobility of germanium. Due to the combination of ultra-high dielectric strength, high thermal conductivity, and low radiation recovery cross-section and high radiation hardness caused by not exceeding the speed of the carrier, for the high-power, high-performance plasma, the truth value of the cathode is generated. M merit) is estimated to be comparable to or even better than metal. According to the present invention, the present invention provides a plasma generating device including an anode and a cathode. The cathode is made of a wide-band gap material, or includes a wide-band gap material. The anode is tubular or at least with the cathode axis. Space, and at least the main part of the anode does not surround the cathode, and an insulating sheath encloses the cathode, the device A7 _________ B7____ 5. Description of the invention (4) The device is suitable for being disposed in a coating room. Well, no part of the anode encapsulates the cathode. Preferably, the band gap of the material is greater than 2 e V. The material of the cathode is selected from at least one of the following, including a diamond doped, or a C V D doped diamond, or G a N,
:亡1 NAA 1 G a 1 η N合金，·或G a N，A i N :AlGa InN的合金，摻雜Zn，8土或2玎 +s^ ，或其它摻雜的氮化物，硼化物或氧化物。 該陰極為自由符立（free_sanding)裝置，係由接 寬頻帶間隙材料製造而成，或者是包含寬頻帶間 料該陰極包含一金屬框，及在該框上之一層摻 雜：見頻τ間隙材料。該金屬為防火金屬，或者是對 於寬頻帶間隙材料提供良好附著性的金屬。在此例子 中，該寬頻帶間隙材料包含摻雜的鑽石，而且該金屬 為鎢’翻或在旦。 經濟部智慧財產局員工消費合作社印製 、該陰極呈圓頂形，f狀，形如蓋子。包含一外電 :線？及一機構’用於提供一主放電氣體或氣體混合 及提供二次反應性氣體或氣體混合物。該裝置包含 用於該電漿的磁場均勻器，以增強電紫的均勻度。 該絕緣勒體由石英或一高溫陶€材料製造而成。 由D C电流直接對該陰極加熱。由一電感性& ρ 信號^熱該陰極。由一二次電阻性加熱器加熱該陰極。 最好田陰極的溫度達到令電子足以克服寬頻帶 間隙材，障壁的位階時，從陰極中放射電子，主要由 具有少量均放射的熱離子放射導致該電子放射。 5 A7 A7 經濟部智慧財產局員工消費合作社印製 ^------B7 五、發明說明（5 ) 經由在陽極及陰極之間有效的偏壓，而使得該陰 極作用如一場放射器。 該陽極及陰極連接到一 D c電源，以控制該放射 電壓及電流。 該磁場均勻器為一在電漿出口上方的圓形多極磁 環均勻器。 -依據本發明的電漿產生裝置可以使用在一或多個 其他材料蒸鍍裝置的組合，如電子束蒸鍍裝置，熱蒸 鍍裝置或放射裝置。 Μ… 由下文中的說明可更進一步了解本發明之特徵及 優點’閱讀時並請參考附圖。 較佳實施例之詳細說明： -現在請參考圖la，其中顯示一電漿產生裝置， 此電漿產生裝置具有一圓管狀陽極包封體2，一陰極 1及外電磁線圈3。圖中參考數字4為一反應性氣體 的入口。陽極直接包圍該陰極丄，整個電漿產生裝置 係位在一塗覆在外的隔間内。依據圖中箭頭A所示方 向作用的放電氣體或氣體混合物係為如氬，氖及氦之 類的惰性氣體。此裝置的主要缺點為在陰極丄處，由 濺射所產生的耗損相當大，此係因為由於包封隹陰極 的陽極太接近該陰極而導致正電荷離子直接衝擊之 故。此裝置與使用陰極作為沉積材料的沉積系統非常 類似。 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） n US n n in n n n Mm— n n I 0 l n n n n n 訂---------線 (請先閱讀背面之注意事項再赛寫本頁) 2 2 2 5 7 五 經濟部智慧財產局員工消費合作社印製 A7 、發明說明（ό) 現在請參考圖1b，其中顯示依據本發明例子的 :漿產生衣置’其中該電漿產生裝置包含—圓管形的 陽極包封2，一陰極1及外電磁線圈3。該陽極與陰 極形成軸向間隔的關係，如圖所示係置於該陰極的上 方（而陽極中沒有任何部位包圍該陰極），其中該陰極 由石英或高溫陶二是材料製造的絕緣勒體5。整個電浆 產生裝置置於-塗覆室内。可以直接由〇(：電流或引 發性R =頻率加熱該陰極，或者是直接使用第二組電 阻加熱為加熱。當陰極的溫度達到足以使得電子可以 克服寬頻帶間隙材料的能量降壁時，從陰極中放射出 電子，主要由具有小量之場發射的熱離子放射產生該 電子放射。陰極1動作如一場放射器，其中只在陽極 及陰極1之間作用一允許的偏壓。在壓力大於丄托 耳，且最好是介於丄〇-6托耳及2 〇托耳下，從如氬， 氖，氦之類的惰性氣體中選擇作用在如箭頭所示方向 的主放射氣體或氣體混合物中，電極1及2連接到D C電源中，以控制放射電壓及電流。在箭頭6所示的 方向中，經由在外電磁線圈3及陽極2中的開口 1 〇 及1 1提供如氬，氖，氦之類的惰性氣體。 由陽極2及絕緣鞘體5修改圖1 b中所示的形 態，使付從正偏壓陰極2附近產生之正電荷離子對於 陰極1的直接衝擊可以減少。但是，電磁線圈仍開始 對從陰極1放射的電子產生作用，且從陰極1向上流 出的離子放射氣體更進一步攜帶電子沿著螺旋形的路 径運動。（位在陽極2上方的）反應性氣體入口提供如 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I I------ I----ί ---------^ (請先閱讀背面之注意事項再超寫本頁) 經濟部智慧財產局員工消費合作社印製 極 必 框 ‘屬 A7 五、發明說明) 氫氣或氮氣的氣體或氣妒、、日人 乳版此合物以與離子化惰性氣體 4乳體此合物反應。使用卜古 户势_ +、 使用此间岔度的離子通量以輔助 源產生之材料薄膜沉積。可以在電漿出口處 的：配置-圓形多極環繞磁均勾器，以增 的均勻性。 適於陰極1之寬頻帶間隙材料（其頻帶間隙大於 e Ό的例子為摻雜的鑽石膜，極的鑽石材料二 f電子產生率比賴的陰轉料還要高很多。此意謂 者減少在電漿產生裝置中陰極的壓降，因此減少該裝 置中全部的功率需求。鑽石的化學性質相當穩定。因 此由離子轟擊而從陰極滅射的材料量也跟著減少，且 增加使用放射量。此由減射所致之陰極材料的低耗損 可以延長使用壽命及相當之陰極的電漿穩定性。鑽石 也具有非常高的導熱速率，使得由間接或直接加敎機 構所產生的熱可以快速產生，且在整個陰極上均勾分 伟。 _子絲所產生的熱也快速導人整個陰極中。 此高的導熱率將在陰極的整個表面上產生更均勻的電 子放射。 ' 現在請參考圖2 a及2 b，從摻雜之寬頻率材料 中製造的陰極1呈圓管形。此陰極軸向安裝在陽 内，而且在陽極及陰極之間的一電路徑用於作用 需要的偏壓。圖2 a及2 b中的陰極丄係由一金屬 再塗覆上一層摻雜的寬頻帶間隙材料所形成。該金 框可以是彈簧型式的線圈或編織的金屬線 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） ^--------^---------線 (請先閱讀背面之注意事項再堉：寫本頁) 4/5222 經濟部智慧財產局員工消費合作社印製 A7 ---— B7 五、發明說明（<g ) 陰極1可以其他多種不同的型式，例如在圖3a 及3b中所示者，在此例子中，陰極的型式如—蓋子， 且如在圖4a及“中所示者，其中其型式如圓頂形。 圖5 a及5 b顯示—形如圍離的陰極，其中包含 一矩形柱體7的圓形陣列’其間具有8個間隙。在陰 極柱的上及下端中連接有電接點。該電接點也可以對 於該陰極提供電支撐。 須了解陰極可以具有多種不同的材料，例如曲線 形或彎摺形。 圖6顯示用於多極環繞磁均勻器放射的詳細結 構，其適於置於該電槳產生裝置及一基體之間。作用 該作用該磁多極磁環場而使得電漿的分佈更形均勻。 該磁多極磁環為由圖6所示之交互極化的磁鐵g建立 的磁場形態，其在多極磁環的邊界產生一強場。在電 漿中的發政導致在内部區域中產生一平坦的電装分 佈，但是一般在邊緣中的平坦電漿分佈減少橫向發 散，此限制在多極磁環内的電漿。一例子為使得磁場 強度41〇m丁及lev之電子溫度的s m c〇磁 鐵，則得到垂直於大小約為i m/s之磁場的離子漂 移速度。此比在自由場區中的直接離子速度及漂移速 度小四個數量級，而且在磁多極磁環内部區域中足以 南度的限制電漿的移動範圍。3 〇個S m C 〇磁鐵所 排列而成的任何陣列可以架構2 2公分直徑的多極環 繞磁均勻器。 9 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ^ 裝--------^---------^ (請先閱讀背面之注意事項再垓寫本頁) 475222: Die 1 NAA 1 G a 1 η N alloy, or G a N, A i N: AlGa InN alloy, doped Zn, 8 soil or 2 玎 + s ^, or other doped nitrides, borides Or oxide. The cathode is a free-sanding device, which is made of a wide-band gap material, or contains a wide-band gap material. The cathode includes a metal frame, and a layer of doping on the frame: see frequency τ gap material. This metal is a fire-resistant metal or a metal that provides good adhesion to wide-band gap materials. In this example, the wide band gap material contains doped diamond, and the metal is tungsten 'or denier. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the cathode is dome-shaped, f-shaped, and shaped like a lid. Contains an external power: line? And a mechanism 'for providing a primary discharge gas or gas mixture and providing a secondary reactive gas or gas mixture. The device contains a magnetic field homogenizer for the plasma to enhance the uniformity of the electric violet. The insulator is made of quartz or a high temperature ceramic material. The cathode is directly heated by the DC current. The cathode is heated by an inductive & ρ signal. The cathode is heated by a secondary resistive heater. It is desirable that the temperature of the cathode of the field is such that the electrons are sufficient to overcome the wide-band gap material and the barriers, and the electrons are emitted from the cathode, mainly due to thermionic radiation with a small amount of uniform radiation. 5 A7 A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ ------ B7 V. Description of the invention (5) The anode acts as a field emitter by applying an effective bias between the anode and the cathode. The anode and cathode are connected to a DC power source to control the radiated voltage and current. The magnetic field homogenizer is a circular multipole magnetic ring homogenizer above the plasma outlet. -The plasma generating device according to the present invention can be used in combination with one or more other material evaporation devices, such as an electron beam evaporation device, a thermal evaporation device or a radiation device. Μ ... The features and advantages of the present invention can be further understood from the following description 'When reading, please refer to the accompanying drawings. Detailed description of the preferred embodiment:-Please refer now to Fig. 1a, which shows a plasma generating device, which has a circular tubular anode encapsulation body 2, a cathode 1 and an outer electromagnetic coil 3. Reference numeral 4 in the figure is an inlet of a reactive gas. The anode directly surrounds the cathode, and the entire plasma generating device is positioned in an outer-coated compartment. The discharge gas or gas mixture acting in the direction shown by the arrow A in the figure is an inert gas such as argon, neon and helium. The main disadvantage of this device is that at the cathode, the loss caused by sputtering is quite large, because the positively charged ions directly impact because the anode encapsulating the cathode is too close to the cathode. This device is very similar to a deposition system using a cathode as the deposition material. 6 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) n US nn in nnn Mm— nn I 0 lnnnnn Order --------- line (Please read the precautions on the back first Write this page again) 2 2 2 5 7 5 The Intellectual Property Bureau of the Ministry of Economic Affairs's Consumer Cooperatives printed A7, Invention Description (ό) Now please refer to Figure 1b, which shows an example of the present invention: The plasma generating device includes a round tube-shaped anode envelope 2, a cathode 1 and an outer electromagnetic coil 3. The anode and the cathode form an axially spaced relationship, and are placed above the cathode as shown in the figure (and the anode does not have any part surrounding the cathode), wherein the cathode is made of quartz or high-temperature ceramic. 5. The entire plasma generating device is placed in a coating room. The cathode can be directly heated by 0 (: current or induced R = frequency, or directly heated by a second set of resistors. When the temperature of the cathode reaches enough to allow electrons to overcome the energy drop of the wide-band gap material, from The cathode emits electrons, which are mainly generated by thermionic radiation with a small amount of field emission. The cathode 1 acts like a field emitter, where only an allowable bias is applied between the anode and the cathode 1. When the pressure is greater than丄 Torr, and preferably between 丄 0-6 Torr and 20 TOR, select the main radiant gas or gas acting in the direction shown by the arrow from inert gases such as argon, neon, and helium In the mixture, the electrodes 1 and 2 are connected to a DC power source to control the radiation voltage and current. In the direction shown by the arrow 6, through the openings 10 and 11 in the outer electromagnetic coil 3 and the anode 2, such as argon, neon are provided. Inert gas such as helium. The anode 2 and the insulating sheath 5 modify the configuration shown in FIG. 1 b so that the direct impact of the positively charged ions generated near the positive biased cathode 2 on the cathode 1 can be reduced. The electromagnetic coil still starts to act on the electrons emitted from the cathode 1, and the ionic radiation gas flowing upward from the cathode 1 further carries the electrons along the spiral path. The reactive gas inlet (located above the anode 2) provides For example, 7 paper sizes are applicable to China National Standard (CNS) A4 (210 X 297 mm) I I ------ I ---- ί --------- ^ (Please read the back first Note on this page, please write this page again) The extremely necessary frame printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs is “A7 V. Description of the invention) Hydrogen or nitrogen gas or gas jealousy This compound reacts with the inert gas 4 emulsion. Use Bugu potential _ +, use the bifurcation ion flux to assist the deposition of material thin film generated by the source. Available at the plasma outlet: configuration-round multi-pole surround magnetic equalizer for increased uniformity. Suitable for wide band gap material of cathode 1 (an example whose band gap is larger than e Ό is a doped diamond film, the diamond electron material generation rate of polar diamond material is much higher than that of Lai cathode material. This means less The pressure drop of the cathode in the plasma generation device reduces the overall power requirement in the device. The diamond's chemical properties are quite stable. Therefore, the amount of material extinguished from the cathode by ion bombardment also decreases, and the amount of radiation used increases. The low loss of the cathode material caused by the reduced emission can prolong the service life and the plasma stability of the equivalent cathode. The diamond also has a very high thermal conductivity rate, so that the heat generated by the indirect or direct heating mechanism can be quickly generated , And it is divided on the entire cathode. _ The heat generated by the daughter wire is also quickly conducted to the entire cathode. This high thermal conductivity will generate more uniform electron emission on the entire surface of the cathode. 'Please refer to the figure now 2 a and 2 b, the cathode 1 made of doped wide frequency material has a circular tube shape. This cathode is axially installed in the anode, and an electrical path between the anode and the cathode is used for The required bias voltage is used. The cathodes in Figures 2a and 2b are formed by coating a metal with a layer of doped wide-band gap material. The gold frame can be a spring-type coil or a braided metal wire book. Paper size applies to China National Standard (CNS) A4 specification (210 X 297 public love) ^ -------- ^ --------- line (please read the precautions on the back before 堉: write This page) 4/5222 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ----- B7 V. Description of the invention (&g;) The cathode 1 can be in many other different types, such as those shown in Figures 3a and 3b In this example, the type of the cathode is like a cover, and as shown in Figures 4a and ", where the type is like a dome. Figures 5a and 5b show a cathode shaped like a fence, which contains A circular array of rectangular columns 7 has eight gaps in between. Electrical contacts are connected to the upper and lower ends of the cathode column. The electrical contacts can also provide electrical support for the cathode. It must be understood that the cathode can have many different Material, such as curved or bent. Figure 6 shows the details for multi-pole surround magnetic homogenizer radiation The structure is suitable to be placed between the electric paddle generating device and a substrate. The magnetic multipole magnetic ring field is applied to make the plasma distribution more uniform. The magnetic multipole magnetic ring is shown in FIG. 6 The form of the magnetic field created by the cross-polarized magnet g generates a strong field at the boundary of the multi-pole magnetic ring. The development in the plasma results in a flat electrical distribution in the inner area, but generally in the edges. The flat plasma distribution reduces lateral divergence, which is limited to the plasma inside the multi-pole magnetic ring. An example is an smc〇 magnet with a magnetic field strength of 410 m D and an electron temperature of lev, which is perpendicular to the size of im / s The ion drift speed of the magnetic field. This is four orders of magnitude smaller than the direct ion speed and drift speed in the free field region, and it is sufficient to limit the range of plasma movement in the inner region of the magnetic multipole magnetic ring. Any array of 30 S m C 0 magnets can be used to construct a 22-cm diameter multi-pole circular magnetic homogenizer. 9 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ^ Loading -------- ^ --------- ^ (Please read the precautions on the back before (Transcribe this page) 475222
五、發明說明（f) 圖示之簡單說明 圖1 a及1 b為電漿產生裝置之局部側向視圖， 圖1 a係不依據本發明者，圖丄b則為本發明之例子； 圖2a及2 b為圖j b之裝置中陰極的縱向局部 及截面視圖； 圖 3a，3b ; 4a，4b及5a，5b為圖 1 b之裝置另一陰極的縱向局部及截面視圖；以及 圖β為圖1b之裝置之基體及陽極之間的多極環 繞磁均勻器的頂視圖。 圖號說明： 1 2 3 4 5 7 9 1 0及 1 1 陰極 陽極包封體 外電磁線圈 入口 絕緣鞘體 矩形柱體 磁鐵 開口 -------------裝--------訂-------——線 (請先閱讀背面之注意事項再頊寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）V. Description of the invention (f) Brief description of the diagrams Figures 1a and 1b are partial side views of a plasma generating device, Figure 1a is not according to the inventor, and Figure 丄 b is an example of the invention; 2a and 2b are longitudinal partial and cross-sectional views of the cathode in the device of Fig. Jb; Figs. 3a, 3b; 4a, 4b and 5a, 5b are longitudinal partial and cross-sectional views of the other cathode of the device of Fig. 1b; Top view of the multi-pole surrounding magnetic homogenizer between the base and anode of the device of Fig. 1b. Description of drawing number: 1 2 3 4 5 7 9 1 0 and 1 1 cathode anode envelope external electromagnetic coil inlet insulation sheath rectangular cylinder magnet opening ------------- installation ---- ---- Order ----------- Line (Please read the notes on the back before writing this page) Printed on paper standards of the Ministry of Economic Affairs and Intellectual Property Bureau's Consumer Cooperatives This paper applies Chinese National Standard (CNS) A4 Specifications (210 X 297 mm)