A kind of scan type ion gun
Technical field
The present invention relates to a kind of improvement of ion gun structure.
Background technology
Digital information storage has become the present maximum of modern civilization and has advanced strength, also is information age one of the most promising research field.To higher information storage density and faster the demand of information transfer rate impelled nanosecond science and technology application and development in the message area.The development of next stage electronic component is further nanometer, and enters the quantum world.
In the structure of nano-component, ion(ic) etching is a technology that has been widely used, its roughly step be:
1. utilize electron beam/ultraviolet lithography to make the etching mask;
2. mask is overlying on and waits to carve on the sample, be exposed in the high energy Ar+ ion flow;
3. remove remaining with acetone (CH3COCH3).
In step 2, usually use water cooling system to prevent the too high destruction that sample is caused of temperature to the operating desk of placing sample, but because the restriction of cooling water pipe and system sealing condition, operating desk is difficult to technically accomplish tiltable and rotatable simultaneously, thereby brings two large problems: etched uniformity of sample and etching effective area (ion flow reaches the zone of the density of etching requirement) are not ideal enough because of being subjected to ion flow restriction itself.
For addressing the above problem, the wearing of Southeast China University founded the state and Ling Yiming once proposed a kind of method of fuzzy realization film large tracts of land uniform etching, promptly adopt the translation and the rotation of operating desk simultaneously, but do not adopt cooling system in this system, but the working link by many discontinuous cycle, the influence that relies on the natural cooling of system therebetween to avoid temperature that the film superconducting property is caused.This method be on the basis of using the conventional ion source to the transformation of operating desk, and system cools is restricted to a certain extent.
Summary of the invention
Technical problem to be solved by this invention provides a kind of scan type ion gun, and this ion gun can carry out the etching of scan-type on the surface of etch thin film with ion, thereby realizes the etched uniformity of film surface and improve etched effective area.
In order to solve the problems of the technologies described above, a kind of scan type ion gun of the present invention, comprise arc chamber, the convergence magnetic field device that places the grid assembly in the arc chamber and center on arc chamber, wherein, grid assembly is made of all round-meshed source electrode in center, grid and intensifying ring, assembles magnetic field and covers source electrode and grid, and it is characterized in that: the port that is positioned at intensifying ring one side of arc chamber is provided with the scanning magnetic field device.
Described arc chamber is a quartz ampoule.Described convergence magnetic field device constitutes by being enclosed within the outer helix tube of quartz ampoule.
Described scanning magnetic field device is coil that crosswise places by two pairs and constitutes and be fixed on the quartzy mouth of pipe by becket.
Adopt technique scheme,, can make the mode that ion beam is scanned on the X-Y direction, realized large-area uniform film etching by magnetic field device owing to increased the scanning magnetic field device in the ion gun structure.And has advantage simple in structure, cheap for manufacturing cost.
Description of drawings
Below in conjunction with the drawings and specific embodiments a kind of scan type ion gun of the present invention is elaborated:
Fig. 1 is the structural representation of a kind of scan type ion gun of the present invention.
Fig. 2 is the end view of Fig. 1.
Embodiment
A kind of as shown in Figure 1 scan type ion gun, this ion gun is arranged in the vacuum chamber (not shown), comprises the arc chamber that is made of quartz ampoule 1, and postmedian is put in quartz ampoule source electrode 2, grid 3, the grid assembly that intensifying ring 4 constitutes; Source electrode 2, grid 3 and intensifying ring 4 are the round-meshed circular aluminum electrode in center, and the space is provided with between the three.The copper heavy gauge wire is connected on three electrodes, and the little quartz ampoule that the two-section external diameter is slightly less than the aluminium dish places and is used to keep between the aluminium dish between source electrode 2, grid 3 and the intensifying ring 4 at interval.
Be arranged with helix tube 5 outside quartz ampoule 1, this helix tube 5 directly is enclosed within outside the quartz ampoule 1 after fixing by the copper conductor coiling and with heavy gauge wire, covers part between source electrode 2 and the grid 3, has constituted the convergence magnetic field device of this ion gun.Helix tube 5 is connected with a vacuum chamber low current DC power supply outward.Because it is consistent with the ion flow axis of travel to assemble magnetic direction, is assembled the long-range navigation thatch power effect of magnetic field device generation when ion flow is crossed quartz ampoule 1 and parallel spiral pipe 5 axis advance, thereby reached converging action.
Front end at quartz ampoule 1 is provided with scanning magnetic field, this scanning magnetic field is made of four identical coils 6, two pairs of four coils 6 minutes are crosswise and are fixed on the becket, and this becket is enclosed within the quartzy mouth of pipe of accelerating electrode one side, makes two pairs of coils 6 one-tenth level, vertical direction respectively.Every pair of coil 6 is connected with the outer alternating-current power supply of vacuum chamber respectively.Flow to the alternating current of every pair of coil 6 by change, the magnetic field force of scanning magnetic field is changed, thereby ion flow is offset on request, can carry out the etching of scan-type.
This ion gun can use argon ion.Argon gas charges into vacuum chamber,, grid two interpolar ionization endogenous at quartz ampoule, the formation argon plasma (contain Ar, Ar+, e-).
Use this scan type ion gun to a copper film sample (thickness
) carrying out etching, this sample wraps up with the aluminium foil that pattern is arranged.Sample is carried out etching after fixing, and etched relevant parameter is respectively: ar pressure=96 millitorrs, excitation voltage=350 volt, accelerating voltage=300 volt, convergence magnetic field 60 Gausses.In above-mentioned lasting 5 minutes of etching down that are provided with.Etched effect finally can from etched area thickness change the color that causes as can be seen etching evenly, the pattern sharpness of border, the recognizable area of naked eyes is about 5cm
2Can draw, scan type ion gun of the present invention has the advantage that can realize large-area uniform film etching.