A7 B7 五、發明說明（4 ) 其使得燈絲及欲由系統作植入之晶圓的污染爲最小。. 本發明之另一個目的係提供一種電漿簇射器燈絲，其 具有一低的熱容量與熱傳導率，俾使其熱放射率係作成爲 快速地響應於輸入電流之改變。 本發明之又一個目的係提供一種電漿簇射器燈絲，其 降低由其一作用中央部位至燈絲腳部之熱傳導率，而同時 維持該中央部位之足夠放射表面積，且其中熱量產生係集 中於該中央部位而非透過該腳部而傳導出。 本發明之再一個目的係提供一種用於電漿簇射器之燈 絲’其使用較習知燈絲者爲少之電力。 , 本發明之另一個目的係提供一種用於電漿簇射器之燈 絲’其降低了於燈絲及其所安裝之電漿氣體室的介面之氣 體洩漏可能性。 〔發明槪述〕 一種帶狀（ribbon)燈絲係提供用於一熱離子式放射 裝置。該燈絲包含一細長本體，具有由一長度、一寬度、 與一厚度所界定之一結構。該長度包含一中央部位，以及 於該中央部位各側之第一與第二端部位。該中央部位之寬 度係大於第一與第二端部位之寬度。此外，該燈絲之厚度 係大致小於沿其全長之寬度。因此，該帶狀燈絲具有沿著 其全長之一非均勻的橫截面積。 於特殊之實施例中，該帶狀燈絲可能係構成爲一單一 螺旋狀線圈，其具有分別安裝至第一與第二腳部於其內之 槽位置的第一與第二端部位。較佳爲，該燈絲係含有鎢， 6 、 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝 ----訂---------— 經濟部智慧財產局員工消費合作社印製 經濟部中央標準局負工消費合作社印製 Α7 Β7 五、發明説明（I ) 〔發明領域〕 本發明係槪括關於離子植入器之領域，更明確而言， 係有關一種用於離子植入器中之電漿簇射的改良式丨最魅^ 〔發明背景〕 離子植入技術已成爲工業界於大規模製造積體電路時 用以將半導體摻雜以雜質之較佳的技術。—種典型之離子 植入器包含三個部分惑无系統：（i)—終端，用以輸出 一離子束；（i i)一束線，用以導引及調整由該終端所 輸出的離子束；及（i i i)一目標室，含有欲由已調整 後之離子束作植入的一半導體晶圓。該終端包括一源，一 正電充電離子束係由該源所取出。該束線元件調整被取出 之正電充電離子束於其朝向目標晶圓的路徑之能量位準及 聚雋。 使用該種離子植入器所遭遇到之一個問題，係晶_充 m ( charging)之問題。隨著正電充電之離子束係持續以衝 擊該目標晶圓，晶圖之表面可能累積不良之過量正電倚。 此累積之正電荷於其跨越晶圓表面之分佈係經常爲不均勺 的。於晶圓表面之合成電場將損壞晶圓上之微電路。隨鲁 被植入之電路元件變得愈小，該累積表面電荷之問題係愈 爲顯著，因爲較小之電路元件係更易受到由合成電場所处' 成之損壞。 埯 該種晶圓充電現象之一個習知解決方式係使用〜_憊 漿簇射器。一種典型之電漿簇射器包括一電弧室及—電漿 室，一情性氣體係於該電弧室中被離子化以產生含有荽小 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210x297公超） (請先閲讀背面之注意事項#填寫本頁) 訂--- A7A7 B7 V. Description of the invention (4) It minimizes the pollution of the filament and the wafer to be implanted by the system. Another object of the present invention is to provide a plasma shower filament which has a low heat capacity and thermal conductivity, so that its thermal emissivity is made to respond to changes in input current quickly. Another object of the present invention is to provide a plasma shower filament, which reduces the thermal conductivity from an active central part to the filament foot while maintaining a sufficient radiation surface area of the central part, and wherein the heat generation is concentrated in The central part is transmitted through the foot instead of through the foot. Still another object of the present invention is to provide a filament ' for a plasma shower, which uses less electricity than a conventional filament. Another object of the present invention is to provide a filament for a plasma shower, which reduces the possibility of gas leakage from the filament and the interface of the plasma gas chamber in which the filament is installed. [Invention Description] A ribbon filament is provided for a thermionic radiation device. The filament includes an elongated body having a structure defined by a length, a width, and a thickness. The length includes a central portion, and first and second end portions on each side of the central portion. The width of the central portion is larger than the width of the first and second end portions. In addition, the thickness of the filament is substantially smaller than the width along its entire length. Therefore, the ribbon filament has a non-uniform cross-sectional area along one of its entire length. In a special embodiment, the ribbon filament may be configured as a single helical coil having first and second end portions respectively mounted to groove positions of the first and second leg portions therein. Preferably, the filament contains tungsten. 6. This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (please read the precautions on the back before filling this page). ---------— Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the Consumers Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, printed by A7 and B7. V. Invention Description (I) [Invention Field] The present invention includes The field of ion implanters, more specifically, relates to an improved type of plasma shower used in ion implanters. The most attractive ^ [Background of the Invention] Ion implantation technology has become a large-scale manufacturing industry. A better technique for doping semiconductors with impurities in integrated circuits. A typical ion implanter consists of three parts: (i) a terminal for outputting an ion beam; (ii) a wire for guiding and adjusting the ion beam output by the terminal ; And (iii) a target chamber containing a semiconductor wafer to be implanted from the adjusted ion beam. The terminal includes a source from which a positively charged ion beam is taken. The beam-line element adjusts the energy level and convergence of the positively charged ion beam taken out toward its target wafer. One of the problems encountered with this type of ion implanter is the problem of charging. As the positively charged ion beam continues to impact the target wafer, the surface of the crystal pattern may accumulate a bad excess positive current. The distribution of this accumulated positive charge across the wafer surface is often uneven. The combined electric field on the wafer surface will damage the microcircuits on the wafer. As the implanted circuit elements become smaller, the problem of accumulated surface charge becomes more significant, since smaller circuit elements are more susceptible to damage caused by synthetic electrical fields.习 A known solution to this kind of wafer charging phenomenon is to use ~ _ exhausted plasma shower. A typical plasma shower device includes an arc chamber and a plasma chamber, in which an emotional atmosphere system is ionized to produce a small paper containing 荽. This paper is compliant with the Chinese National Standard (CNS) Λ4 specification (210x297). (Super League) (Please read the note on the back #Fill this page) Order --- A7
Ml _ 五、發明説明（>) 部分低能量電子之—電漿，該電漿係由電弧室中引出而進 入電漿室中，且離子束係通過該電漿室。電漿室含有一燈 絲，其係電氣加熱以熱離子式地放射高能量電子進入該電 漿室中。該等高能電子係與惰性氣體分子碰撞以產生電漿 ，其包括能量夠被吸進於離子束中之低能量電子。該等被 吸進之低能量電子因而中性化該束之淨電荷，其接著降低 隨著離子束撞擊晶圓表面而累積於晶圓上之正電荷。此種 系統係揭示於讓渡給本發明受譲人之美國專利第4,804,837 號（Farley所有）’且係以參照方式而整體納入於此。 用以中性化正電充電離子束之電漿簇射器，典型而言 係運用螺旋線圏或“豬尾〔Pigtail) ”式燈絲，具有沿其全 V. / -·· 長之一均勻橫截面，以産生熱離子式之電子放射（參考例 如Robertson等人之美國專利第4,463,255號以及Ito等人之 美國專利第5,399,871號）》然而，此等螺旋狀燈絲呈現出 數個操作上之阻礙。舉例而篱，線圈狀燈絲之均句橫截面 提供沿其長度之一均勻電阻ft，其提供沿其長度之一對應 的均勻熱產生（即燈絲之腳部或端部所傳導之熱係如同燈 絲之中心所傳導者一樣地多）。於是，燈絲之端部（腳部 )提供了燈絲之總熱量傳導蚀/消散性之一重大部分。此 外，豬尾式燈絲之均勻橫截®ί造成沿著燈絲長度建立一溫 度梯度，其由線圏之中點（¾熱者）至線圈之各腳部（最 冷者）。 因爲電子放射係空間電荷限制，燈絲須有一大放射面 積以産生合適之電子放射。m能提高燈絲之一足夠面積以 _______4____ 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公# ) A7 _____B7 五、發明説明（七） 一" 達成熱離子式電子放射所需之溫度’須於燈絲之溫度梯度 中產生一熱點（hot spot) ’其典型而言爲靠近線圏長 度之中點。接近此中點之電子放射率係大於沿著線圏長度 之低溫度區域。因爲諸如鎢（W)之燈絲材料的逢散係指 數式地取決於電子放射率’該熱點產生多量之鶴逸散，其 辱終可能找到路徑至晶圓表面’因而污染晶圓表面。此外 ’接近熱點之鎢逸散的高比率降低了線圈燈絲之操作壽命 〇 ， 除了沿著一標準豬尾式燈絲之長度的非均勻鎢逸散（ 其將造成晶圓污染）之外，燈絲本身之化學污染亦可能發 生。舉例而言，熱的鎢燈絲將化學式地與氮〔N)結合， 氮係由植入期間一塗覆光阻之晶圓所放出之氣態物質，因 而於其表面上構成二氮化鎢（WN2) <v於燈絲上之二氮化 鎢形成將降低其熱離子式放射率。爲了再取得理想之放射 率位準，轉提供更多之電流至燈絲’其進—步降低其效率 與壽命。 一標準線圈燈絲之槪括圓柱狀本體（即貫穿其長度之 圓形橫截面），亦造成特徵爲一高熱量傳導率與熱容量之 燈絲。此種燈絲回應於對應之電流改變’並不會表現出快 速之熱離子式放射率改變。燈絲之快速饗應時間對於能夠 择制於放出氣態物質期間之燈絲電流係重要的。 是以，本發明之一個目的係提供一種用於離子植入系 統之一電漿簇射器的燈絲，其提供沿著其長度之一均勻的 溫度，以提供一對應之均勻的熱離子式電子放射特性’且 -----Γ------β-- (請先閲讀背而之注意事項再¾.¾本頁) 訂 經濟部中央標隼局員工消費合作社印¾ 張尺度ϊΐίί]中國國家標準（CNS ) Λ4规格(210X 297'〉># )Ml _ 5. Description of the invention (>) Plasma of some low energy electrons, the plasma is led out from the arc chamber and enters the plasma chamber, and the ion beam passes through the plasma chamber. The plasma chamber contains a filament which is electrically heated to radiate high-energy electrons into the plasma chamber in a thermionic manner. These high-energy electrons collide with inert gas molecules to produce a plasma, which includes low-energy electrons with sufficient energy to be absorbed into the ion beam. The sucked-in low-energy electrons thus neutralize the net charge of the beam, which in turn reduces the positive charge accumulated on the wafer as the ion beam hits the wafer surface. Such a system is disclosed in U.S. Patent No. 4,804,837 (owned by Farley) 'assigned to the assignee of the present invention' and is incorporated herein by reference in its entirety. Plasma showers for neutralizing positively charged ion beams typically use a helix or "Pigtail" type filament, which has a uniform length along its full V. /-·· Cross-section to generate thermionic electron emission (see, for example, US Patent No. 4,463,255 to Robertson et al. And US Patent No. 5,399,871 to Ito et al.) However, these spiral filaments present several operational obstacles . By way of example, the cross section of the coiled filament provides a uniform resistance ft along one of its lengths, which provides a corresponding uniform heat generation along one of its lengths (ie, the heat transmitted through the filament's feet or ends is like a filament As many as are transmitted through the center). Thus, the end (foot) of the filament provides a significant portion of the total heat conduction erosion / dissipation of the filament. In addition, the uniform cross-section of the pigtail filament creates a temperature gradient along the length of the filament from the midpoint of the coil (the hottest) to the legs of the coil (the coldest). Due to the space charge limitation of the electron emission system, the filament must have a large radiation area to generate suitable electron emission. m can increase the sufficient area of one of the filaments to _______4____ This paper size applies Chinese National Standards (CNS) Λ4 specifications (210X297 public #) A7 _____B7 V. Description of the invention (7) I " The temperature required to achieve thermionic electron emission 'A hot spot must be generated in the temperature gradient of the filament', which is typically close to the midpoint of the length of the coil. The electron emissivity near this midpoint is greater than the low temperature region along the length of the line. Because the divergence of a filament material such as tungsten (W) is exponentially dependent on the emissivity of the electron, the hot spot generates a large amount of crane dissipation, which may eventually find its way to the wafer surface and contaminate the wafer surface. In addition, the high ratio of tungsten emission close to the hot spot reduces the operating life of the coil filament. In addition to the non-uniform tungsten emission along the length of a standard pigtail filament (which will cause wafer contamination), the filament itself Chemical pollution may also occur. For example, hot tungsten filaments chemically combine with nitrogen (N). Nitrogen is a gaseous substance released from a photoresist-coated wafer during implantation, thus forming tungsten dinitride (WN2) on its surface. ) < v The formation of tungsten dinitride on the filament will reduce its thermionic emissivity. In order to achieve the desired emissivity level, more current is supplied to the filament ', which further reduces its efficiency and life. The inclusion of a cylindrical coil body (i.e. a circular cross-section across its length) of a standard coil filament also results in a filament characterized by a high thermal conductivity and heat capacity. Such a filament does not exhibit a rapid thermionic emissivity change in response to a corresponding change in current '. The fast response time of the filament is important for being able to select the filament current during the gaseous phase. Therefore, an object of the present invention is to provide a filament for a plasma shower of an ion implantation system, which provides a uniform temperature along its length to provide a corresponding uniform thermionic electron. Emission characteristics' and ----- Γ ------ β-- (Please read the precautions on the back first, and then ¾. ¾ this page) Order the stamp of the employee consumer cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ] China National Standard (CNS) Λ4 Specification (210X 297 '> >#)
A7 B7 五、發明說明（4 ) 其使得燈絲及欲由系統作植入之晶圓的污染爲最小。. 本發明之另一個目的係提供一種電漿簇射器燈絲，其 具有一低的熱容量與熱傳導率，俾使其熱放射率係作成爲 快速地響應於輸入電流之改變。 本發明之又一個目的係提供一種電漿簇射器燈絲，其 降低由其一作用中央部位至燈絲腳部之熱傳導率，而同時 維持該中央部位之足夠放射表面積，且其中熱量產生係集 中於該中央部位而非透過該腳部而傳導出。 本發明之再一個目的係提供一種用於電漿簇射器之燈 絲’其使用較習知燈絲者爲少之電力。 , 本發明之另一個目的係提供一種用於電漿簇射器之燈 絲’其降低了於燈絲及其所安裝之電漿氣體室的介面之氣 體洩漏可能性。 〔發明槪述〕 一種帶狀（ribbon)燈絲係提供用於一熱離子式放射 裝置。該燈絲包含一細長本體，具有由一長度、一寬度、 與一厚度所界定之一結構。該長度包含一中央部位，以及 於該中央部位各側之第一與第二端部位。該中央部位之寬 度係大於第一與第二端部位之寬度。此外，該燈絲之厚度 係大致小於沿其全長之寬度。因此，該帶狀燈絲具有沿著 其全長之一非均勻的橫截面積。 於特殊之實施例中，該帶狀燈絲可能係構成爲一單一 螺旋狀線圈，其具有分別安裝至第一與第二腳部於其內之 槽位置的第一與第二端部位。較佳爲，該燈絲係含有鎢， 6 、 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝 ----訂---------— 經濟部智慧財產局員工消費合作社印製 經濟部中决標隼局員工消費合作社印製 A7 B7 五、發明説明（f) 且第一與第二腳部係亦含有鎢。 〔圖式簡單說明〕 第一圖係具有一電漿簇射器之離子植入系統的卒面視 圖，其納入根據本發明主旨所構成一燈絲組件之一個實施 例；. 第二圖係第一圖之系統之電漿簇射器的一放大平面視 回 · 圖， 第三圖係一燈絲組件之平面視圖，其使用於第二圖之 電漿簇射器中，且係根據本發明复旨里檨感： 第四圖係第三圖之燈絲組件的一側視圖： 第五圖釋第三圖之燈絲組件的一端視圖；及 第六圖係第三至五圖之p絲組件的燈絲部位之平面廳.. 圖，其顯示爲於一伸長未作安裝之狀態。 〔較佳實施例之詳細說明〕 參考圖式，第一圖顯示槪略表示爲10之一離子植入 器，其包含一終端1 2、一束線組件1 4、與一目標或末, 端站1 6。槪括而言，終端1 2輸出一離子束，且該束線 組件1 4調整離子束之聚焦及能量位準，並將其導引朝向 位在末端站1 6之一晶圓W。 終端1 2包括一離子源1 8，具有來自一氣體盒2 0 之雜質氣體係注入於其中之一室。能量係施予該可離子化 之雜質氣體，以產生正電離子於該源室中。由高電壓供應 器2 4所供電之一引出電極2 2係由該源室引出一正電離 子束2 6，且將所引出之離子加速朝向—質量分析磁鐵2 _；__7___ 本紙張尺度適用中國國家標準（CNS ) A4規枱（210X2970# ) ----^---1—-k— (請先閲讀背面之注意事項存玖穷本I) 訂 經濟部中央標準局員工消費合作社印製 ΑΊ _ _ . --------------- — 五、發明説明（g ) 8。質童分析磁鐵2 8作用爲，僅通過一適當電荷質量比 之離子至該束線組件1 4上。由質量分析磁鐵2 8所提供 的束路徑2 9之騰空，係由真空泵3 0所提供。 _一....- 束線組件1 4包含一矩透鏡3 2、一法拉第旗（Hag Faraday) 3 4、一電漿簇射器3 6、以及〔可選用地）一 離子束加速/減速電極（未顯示於第一圖中）。矩透鏡.3 2聚焦由終端1 2所輸出之離子束，而法拉第旗3 4測量 於系統設定期間之離子束特性。電漿簇射器3 6含有創新 之燈絲組件，其將進一步解說於後。加速/減速電極係使 用以加速或減速被聚焦後之離子束至一所需能量位準，此 係在植入於目標站1 6之一晶圓之前。由束線組件1 4所 提傅之束路徑的騰空係由真空泵3 6所達成。 .目標站1 6包括一碟4 0、一旋轉式驅動機構4 2、 與一線性驅動機構4 4，複數個目標晶圓係安裝於碟4 0 之上，旋轉式驅動機構4 2係用以施與旋轉運動至該碟， 而線性驅動機構4 4係用以施與線性運動至該碟。一機械 手臂4 6經由一負載鎖室4 8而載負晶圓於該碟上。此系 統之操作係由位在目標站1 6末端之一操作者控制站5 0 所控制。 電漿簇射器3 6係更爲詳細地顯示於第二圖中，其包 括一電磁反射器6 0與一泛射（flood)槍組件6 2。電磁 反射器6 0包含一偏壓電極6 4，其設有一隙縫6 6，離 子束2 6係透過隙縫6 6而通過，且其係夾在二個接地電 極6 7與6 8之間。接地電極6 7與6 8係由永久磁鐵所 . ___8___ 本紙張尺度適用中國國家榡準（CNS ) Λ4規格（210X297公犮) ~~ (請先閱讀背面之注意事項再填1¾本頁)A7 B7 V. Description of the invention (4) It minimizes the pollution of the filament and the wafer to be implanted by the system. Another object of the present invention is to provide a plasma shower filament which has a low heat capacity and thermal conductivity, so that its thermal emissivity is made to respond to changes in input current quickly. Another object of the present invention is to provide a plasma shower filament, which reduces the thermal conductivity from an active central part to the filament foot while maintaining a sufficient radiation surface area of the central part, and wherein the heat generation is concentrated in The central part is transmitted through the foot instead of through the foot. Still another object of the present invention is to provide a filament ' for a plasma shower, which uses less electricity than a conventional filament. Another object of the present invention is to provide a filament for a plasma shower, which reduces the possibility of gas leakage from the filament and the interface of the plasma gas chamber in which the filament is installed. [Invention Description] A ribbon filament is provided for a thermionic radiation device. The filament includes an elongated body having a structure defined by a length, a width, and a thickness. The length includes a central portion, and first and second end portions on each side of the central portion. The width of the central portion is larger than the width of the first and second end portions. In addition, the thickness of the filament is substantially smaller than the width along its entire length. Therefore, the ribbon filament has a non-uniform cross-sectional area along one of its entire length. In a special embodiment, the ribbon filament may be configured as a single helical coil having first and second end portions respectively mounted to groove positions of the first and second leg portions therein. Preferably, the filament contains tungsten. 6. This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (please read the precautions on the back before filling this page). ---------— Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Ministry of Economic Affairs Finalized by the Bureau of Consumers ’Cooperatives of the Economic Affairs Bureau Printed by A7 B7 V. Invention Description (f) And the first and second feet are It also contains tungsten. [Brief Description of the Drawings] The first drawing is a front view of an ion implantation system having a plasma shower, which includes an embodiment of a filament assembly constructed according to the gist of the present invention; the second drawing is the first An enlarged plan view of the plasma shower of the system shown in the figure. The third diagram is a plan view of a filament assembly, which is used in the plasma shower of the second diagram, and according to the present invention. Inside feeling: the fourth figure is a side view of the filament assembly of the third figure: the fifth figure illustrates an end view of the filament assembly of the third figure; and the sixth figure is the filament part of the p-wire assembly of the third to fifth figures The flat hall .. It is shown in an extended state without installation. [Detailed description of the preferred embodiment] With reference to the drawings, the first figure shows an ion implanter, which is briefly shown as 10, and includes a terminal 1 2, a beam line assembly 1 4, and a target or terminal. Station 1 6. In other words, the terminal 12 outputs an ion beam, and the beamline assembly 14 adjusts the focus and energy level of the ion beam and guides it toward one of the wafers W at the end station 16. The terminal 12 includes an ion source 18 having an impurity gas system from a gas box 20 injected into one of the chambers. Energy is applied to the ionizable impurity gas to generate positively charged ions in the source chamber. One of the lead-out electrodes 2 2 powered by the high-voltage supply 24 is a positively charged ion beam 26 led from the source chamber, and accelerates the led-out ions—mass analysis magnet 2 _; __7___ This paper scale applies to China National Standards (CNS) A4 Regulations (210X2970 #) ---- ^ --- 1—-k— (Please read the precautions on the back and save the booklet I) Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ΑΊ _ _. --------------- — V. Description of the invention (g) 8. The mass-child analysis magnet 28 acts to pass only ions of an appropriate charge-to-mass ratio to the beamline assembly 14. The emptying of the beam path 29 provided by the mass analysis magnet 28 is provided by the vacuum pump 30. _ 一 ....- The beamline assembly 1 4 includes a moment lens 3 2, a Faraday flag 3 (Hag Faraday) 3 4, a plasma shower 3 6, and (optionally) an ion beam acceleration / deceleration Electrode (not shown in the first figure). The moment lens .3 2 focuses the ion beam output from the terminal 12, and the Faraday flag 3 4 measures the ion beam characteristics during the system setting. The plasma shower 36 contains an innovative filament assembly, which will be explained further below. The accelerating / decelerating electrode is used to accelerate or decelerate the focused ion beam to a desired energy level, which is implanted before a wafer of the target station 16 is placed. The emptying of the beam path by the beamline assembly 14 is achieved by the vacuum pump 36. The target station 16 includes a disc 40, a rotary drive mechanism 42, and a linear drive mechanism 4 4. A plurality of target wafers are mounted on the disc 40, and the rotary drive mechanism 4 2 is used for The rotary motion is applied to the disc, and the linear driving mechanism 44 is used to apply the linear motion to the disc. A robot arm 46 carries a wafer on the dish through a load lock chamber 48. The operation of this system is controlled by an operator control station 50 located at the end of the target station 16. The plasma shower 36 is shown in more detail in the second figure and includes an electromagnetic reflector 60 and a flood gun assembly 62. The electromagnetic reflector 60 includes a biasing electrode 64, which is provided with a slot 66. The ion beam 26 passes through the slot 66, and is sandwiched between two ground electrodes 66 and 68. The ground electrodes 6 7 and 6 8 are made of permanent magnets. ___8___ This paper size is applicable to China National Standards (CNS) Λ4 specifications (210X297 male) ~~ (Please read the precautions on the back before filling 1¾ this page)
*1T 嘁 經濟部中央標準局員工消费合作社印¾ A? — 137 _ 五、發明説明（) 構成。電源供應器P S 1施加介於一 1仟伏特（k V)與 —3 k V之電位至偏壓電極6 4。電磁反射器6 0可防止 電子朝著終端1 2而漂回上游。於低束能量時，偏壓電極 係不導通，使得反射器6 0僅基於磁性反射，以避免傳輸 電力損失。 泛射槍組件6 2包含一電弧室7 0、一束室管7 2、 與一延伸管7 4。一燈絲組件7 6係位在電弧室中，且包 括一燈絲8 6 (亦參考第三至六圖）。燈絲8 6係電氣加 熱至一熱離子式放射溫度（大約爲2 6 0 0 ° K ) 〇燈絲 電流係由一燈絲電源供應器P S 2 (大約爲一 5 V)所提 供。一電弧電流係由一電弧電源供應器P S3 C大約爲一 2 5至一3 5 V)所建立於燈絲8 6與一電弧室壁7 8之 間，使得介於燈絲與壁7 8之間的電位差係大約爲一 2 0 至—3 0V»此電壓係實施跨過一薄的電漿鞘（被覆）， 其構成環繞該燈絲8 6，提供能夠由燈絲引出高達六安培 熱離子電流之一電場。 諸如氬〔A)之惰性氣體洪應8 0係藉由入口閥8 1 與大量流動控制器8 2而注入於室7 0之中，如同此技藝 中所習知者。包括低能量電子之一高密度電漿係產生於電 弧室7 0中，藉著惰性氣體分子與由燈絲8 6所放射出之 較高能量電子碰撞所產生。經由一周圔（二側）極性（ ambipolar)擴散過程，此高密度電漿接著係擴散通過於電 弧室壁7 8之一小隙縫8 3。一低電壓（小於1 2 V)之 電源供應器P S 4施加一電位至該引出隙縫，以加速擴散 ('*先閱讀背面之注意事項再填一ί'本頁) :裝. ,ιτ 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210Χ297公总） 經濟部中央標準局員工消費合作社印製 A7 ____________B7__^_____ 五、發明説明（3 ) 過程。被擴散之高密度電漿接著與束電漿相互作用’並增 加該束電漿。於高密度電漿中之低能量電子係成爲被吸進 於槪括正電充電之離子束中，以中性化該束之淨電荷’其 接著降低隨著離子束撞擊晶圓表面而累積於晶圓W上之正 電荷。 第三至五圖係更爲詳細地顯示燈絲組件7 6。該組件 7 6包含一對腳部8 5與燈絲8 6，燈絲8 6之形式係一 單一線圈帶（單獨地顯示爲一非線圏狀平面圖於第六圖中 )。於較佳實施例中’腳部8 5係由鎢（w)所構成，旦 燈絲8 β亦係含有鎢。各個鎮腳部8 5包含一軸部8 8， 及較軸部爲厚之一末端部9 0。一肩部9 2將軸部8 8自 末端部90分隔開。 .燈絲組件7 6係安裝於電漿簇射器3 6中，使得該厚 的未端部9 0整個位在電弧室7 0之中，且軸部8 8延伸 通過電弧室壁7 8並經由導體而連接至電源供應器p g 2 。於腳部8 5上之肩部.9 2藉以置放在壁7 §之內部上。 正如脫出之氣體分子〔爲能脫出）必須先移動於·沿著壁了 8之一第一方向（垂直於軸部8 8之軸線）且接著移動於 沿著軸部軸線之一第二方向’透過該腳部至室介面之情性 氣體洩漏係藉著肩部而降至最小。 帶狀燈絲8 6 (第六圖）麵成爲〜單—線圈，其端 部係裝設於腳部8 5之末端部位9 〇中的槽9 4內，且接 著以電子束密接至定位。該帶狀燈絲本身具有介於二個較 窄端部位9 8之間的-寬的中央部位9 6。該寬的中央部* 1T 印 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs ¾ A? — 137 _ V. Description of Invention (). The power supply P S 1 applies a potential between 1 仟 V (k V) and −3 k V to the bias electrode 64. The electromagnetic reflector 60 prevents the electrons from drifting upstream toward the terminal 12. At low beam energy, the bias electrode is non-conducting, so that the reflector 60 is based on magnetic reflection only to avoid transmission power loss. The flooding gun assembly 62 includes an arc chamber 70, a beam chamber tube 72, and an extension tube 74. A filament assembly 76 is located in the arc chamber and includes a filament 86 (see also Figures 3 to 6). Filament 8 is electrically heated to a thermionic radiation temperature (approximately 2600 ° K). Filament current is provided by a filament power supply P S 2 (approximately a 5 V). An arc current is established by an arc power supply P S3 C (approximately 25 to 35 V) between the filament 86 and an arc chamber wall 78, so that it is between the filament and the wall 78. The potential difference is approximately 20 to -3 0V. This voltage system is implemented across a thin plasma sheath (cover), which constitutes around the filament 86, providing one of the six ampere thermionic currents that can be drawn from the filament. electric field. An inert gas such as argon [A], Hong Ying 80, is injected into the chamber 70 through an inlet valve 8 1 and a large number of flow controllers 8 2, as is known in the art. A high-density plasma system including low-energy electrons is generated in the arc chamber 70 by collisions of inert gas molecules with higher-energy electrons emitted from the filament 86. After one-week (ambilateral) ambipolar diffusion process, this high-density plasma is then diffused through a small gap 8 3 in the arc chamber wall 7 8. A low-voltage (less than 1 2 V) power supply PS 4 applies a potential to the lead-out gap to accelerate the diffusion ('* Read the precautions on the back first and then fill in a' This page): Install., Ιτ This paper The standard is applicable to the Chinese National Standard (CNS) Λ4 specification (210 × 297 total), printed by A7 ____________ B7 __ ^ _____, the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention (3) Process. The diffused high-density plasma then interacts with and increases the beam plasma. The low-energy electrons in the high-density plasma become sucked into the ion beam, including positively charged, to neutralize the net charge of the beam, which then decreases as the ion beam hits the wafer surface and accumulates in the ion beam. Positive charge on wafer W. The third to fifth figures show the filament assembly 7 6 in more detail. The assembly 76 includes a pair of feet 85 and a filament 86, and the filament 86 is in the form of a single coil strip (shown separately as a non-linear coil-shaped plan view in the sixth figure). In the preferred embodiment, the 'foot 85 is made of tungsten (w), and the filament 8 β also contains tungsten. Each of the leg portions 85 includes a shaft portion 88, and an end portion 90 that is thicker than the shaft portion. A shoulder portion 92 separates the shaft portion 88 from the end portion 90. The filament assembly 76 is installed in the plasma shower 36, so that the thick end portion 90 is entirely located in the arc chamber 70, and the shaft portion 88 extends through the arc chamber wall 78 and passes through The conductor is connected to the power supply pg 2. The shoulders on the feet 8 5. 9 2 are placed on the inside of the wall 7 §. Just as the released gas molecules (to be able to escape) must first move along one of the walls in a first direction (perpendicular to the axis of the shaft portion 88) and then move in a second direction along the axis of the shaft portion 8 The 'direction' leakage of emotional gas through the feet to the chamber interface is minimized by the shoulders. The surface of the strip filament 86 (sixth figure) becomes a single-coil, and its end portion is installed in the groove 94 in the end portion 90 of the leg portion 85, and is then tightly positioned with an electron beam. The ribbon filament itself has a wide central portion 96 between two narrower end portions 98. The wide central part
__________1Q 本紙張尺度適用中國國家標準（CNS ) Λ4规掐( 210X 297^^1 ------- (請先閱讀背面之注意事項再4,寫本頁) .裝· 訂 五、發明説明（/) 位9 6提供一足夠表面積，合適之熱放射率可由該表面積 發生。於一個實施例中，帶狀燈絲8 6具有大約爲5 - 0 至6 · 0公分（c m)之一長度、大約爲2 . 〇至3 · 0 c m之一寬度、以及大約爲〇 . 5 c nl之一厚度。 燈絲之較窄端部位9 8的小橫截面積降低了由寬的中 央部位9 6至腳部8 5之熱傳導率。此種非均勻橫截面之 結構亦提供沿著燈絲全長之同等的散熱，使得未有熱點出 現於燈絲中。藉著以此方式裁製帶狀燈絲之寬度，可於燈 絲全長得到一均勻的溫度，因而達成自帶狀燈絲之均勻的 熱離子式放射，且避免高鎢逸散之面積。 經濟部中央標準局員工消費合作社印製 由於沿著燈絲8 6之長度不具有熱點，晶圓之鎢污染 可最小化。舉例而言’已發現的是，使用此創新之燈絲已 降低於處理晶圓之鎢污染位準至小於每百萬分含量比例（ P P m)爲5 ’而使用習知燈絲造成之污染係大於5 0 P P m。再者’消除於燈絲8 6上之熱點允許充分之電子 放射’同時並操作於相當低之電力位準。該創新之燈絲組 件7 6之電力消耗係爲3 0 0瓦特（W)之規模，反之， 對於習知之電漿簇射器燈絲則爲大約7 〇 0W。由燈絲組 件7 6所產生/散失之功率（熱）係大部分由燈絲8 6而 非腳部8 5所消耗，因爲燈絲之電阻性（每單位長度）係 大於該等腳部者。 此外’相較於圓形橫截面之習知豬尾式燈絲，燈絲8 6之赞狀結構提供較少之熱傳導率與熱容置。相對於例如 爲圓形橫截面之習知燈絲’在本文中用之辭語“帶狀”燈 ____— ___—11 _____ ^紙張尺度適用中國國象標準（CNS ) Α4規格（210X297公及Τ ' Α7 Β7 五、發明説明（I Ο) 絲將意請著一種燈絲，其具有沿著長度之各點係大致爲一 個次元（如寬度）較另一者（如厚度）爲大之一橫截面積 。是以，相較於習知燈絲，該帶狀燈絲係更爲熱回應至輸 入電力改變。結果爲，控制燈絲電流與電弧電流電源供應 器〔PS2與PS3)之控制系統可更快速地反應於電流 改變（例如電弧電流急降），其將發生於晶圓排出氣態物 質時，且該控制系統可更快速地反應於熱離子式放射率之 改變’其由形成於燈絲上之二氮化鎢所造成。 是以，一種改良式用於離子植入器電漿簇射器之一較 佳實施例已作敘述。將前述說明牢記於心，然而，可瞭解 的是，此說明係僅藉由實例而作成，本發明係並未侷限在 本文中敘述之特定實施例，在未偏離如由隨後之申請專利 範圔與其等效者所界定的本發明之範疇下，不同之重新設 置、修改、與替代均可相對於前述說明而作實施。 (請先閱讀背面之注意事項再填•本頁) 、1Τ 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) Λ4规格（210X297公犮）__________1Q This paper size applies Chinese National Standard (CNS) Λ4 Regulations (210X 297 ^^ 1 ------- (Please read the precautions on the back before writing this page). Binding and ordering The (/) bit 9 6 provides a sufficient surface area from which a suitable thermal emissivity can occur. In one embodiment, the ribbon filament 86 has a length of approximately 5-0 to 6 · 0 cm (cm), A width of approximately 2.0 to 3.0 cm, and a thickness of approximately 0.5 c nl. The small cross-sectional area of the narrower end portion 98 of the filament reduces the width from the wide central portion 96 to the feet. The thermal conductivity of section 85. This non-uniform cross-section structure also provides equal heat dissipation along the entire length of the filament, so that no hot spots appear in the filament. By cutting the width of the ribbon filament in this way, A uniform temperature is obtained over the entire length of the filament, thereby achieving uniform thermionic emission from the strip filament, and avoiding the area where high tungsten escapes. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. With hot spots, tungsten contamination of wafers can be minimized. For example, 'It has been found that the use of this innovative filament has reduced the tungsten pollution level of the processing wafer to less than 5 parts per million (pp m) and the pollution caused by using conventional filaments is greater than 50 PP m. Furthermore, 'the hot spot eliminated on the filament 86 allows sufficient electron emission' at the same time and operates at a relatively low power level. The power consumption of this innovative filament assembly 76 is 300 watts ( W), on the other hand, it is about 7000W for the conventional plasma shower filament. The power (heat) generated / dissipated by the filament assembly 76 is mostly from the filament 86 instead of the foot 8 5 Consumed because the resistance (per unit length) of the filament is greater than those of the feet. In addition, compared to the conventional pigtail filament with a circular cross section, the filament-like structure of filament 86 provides less heat conduction Rate and heat capacity. Relative to, for example, a conventional filament with a circular cross section, "band-shaped" lamp as used in this article ____— ___— 11 _____ ^ The paper size applies the China National Standard (CNS) Α4 Specifications (210X297 male and T 'Α7 Β7 V. Description of the invention (I Ο) silk A filament is intended, which has a cross-sectional area that is roughly one dimension (eg, width) larger than the other (eg, thickness) at each point along the length. Therefore, compared to conventional filaments, The ribbon filament is more thermally responsive to input power changes. As a result, the control system that controls the filament current and arc current power supplies [PS2 and PS3] can more quickly respond to changes in current (such as a sharp drop in arc current), It will happen when the wafer emits gaseous materials, and the control system can respond more quickly to changes in thermionic emissivity, which is caused by the tungsten dinitride formed on the filament. Therefore, a preferred embodiment of an improved plasma shower for an ion implanter has been described. Keep the foregoing description in mind, however, it is understood that this description is made by way of example only, and the present invention is not limited to the specific embodiments described herein, without departing from the scope of patent application as follows Under the scope of the present invention defined by its equivalent, different resets, modifications, and substitutions can be implemented relative to the foregoing description. (Please read the notes on the back before filling in this page), 1T Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs This paper size applies to the Chinese National Standard (CNS) Λ4 specification (210X297 cm)