JPS5734632A - Direct heating type cathode structure - Google Patents
Direct heating type cathode structureInfo
- Publication number
- JPS5734632A JPS5734632A JP10920180A JP10920180A JPS5734632A JP S5734632 A JPS5734632 A JP S5734632A JP 10920180 A JP10920180 A JP 10920180A JP 10920180 A JP10920180 A JP 10920180A JP S5734632 A JPS5734632 A JP S5734632A
- Authority
- JP
- Japan
- Prior art keywords
- conductive
- letter shape
- substrate
- pair
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/13—Solid thermionic cathodes
- H01J1/15—Cathodes heated directly by an electric current
Landscapes
- Electrodes For Cathode-Ray Tubes (AREA)
- Solid Thermionic Cathode (AREA)
Abstract
PURPOSE:To improve the temperature efficiency of a cathode ray structure, by fixing the both ends of ribbon filament coated with electron radioactive substance on its central area to a pair of conductive stay, while forming the intermediate portions of the filament between its central area and both ends into U-letter shape curve along the tube axis. CONSTITUTION:An insulator substrate 11 made of ceramics etc. is inserted in a cathode cylinder 12 after a pair of conductive stay 13 and 14 are led to penetrate this substrate 11 and the cathode cylinder 12 and conductive stays 13 and 14 are fixed to the insulator substrate 11 with adhesive layers 132 and 133. Next, a ribbon filament member 15 containing 70wt% of Ni and 30wt% of W1 is built up with a central portion 151, U-letter shape curved portion 152, and end 153, whereby the both ends 153, 153 are fixed to the conductive stays 13 and 14, and the central portion 151 is coated with substrate metal 18 made of Ni alloy containing Ng, Si and W and an electron radioactive substance 19 made from (Ba, Sr, Co) O. Thus, intense relfection is generated in the gap between the both ends of U-letter shape, resulting in enhancement of temperature efficiency.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10920180A JPS5734632A (en) | 1980-08-11 | 1980-08-11 | Direct heating type cathode structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10920180A JPS5734632A (en) | 1980-08-11 | 1980-08-11 | Direct heating type cathode structure |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5734632A true JPS5734632A (en) | 1982-02-25 |
Family
ID=14504170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10920180A Pending JPS5734632A (en) | 1980-08-11 | 1980-08-11 | Direct heating type cathode structure |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5734632A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5944744A (en) * | 1982-09-08 | 1984-03-13 | Matsushita Electronics Corp | Direct-heated cathode |
JPS61128451A (en) * | 1984-11-27 | 1986-06-16 | Toshiba Corp | X ray tube device |
US4698835A (en) * | 1984-05-31 | 1987-10-06 | Kabushiki Kaisha Toshiba | X-ray tube apparatus |
US4730353A (en) * | 1984-05-31 | 1988-03-08 | Kabushiki Kaisha Toshiba | X-ray tube apparatus |
EP0911861A1 (en) * | 1997-09-16 | 1999-04-28 | Eaton Corporation | Filament for ion implanter plasma shower |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51120166A (en) * | 1975-03-24 | 1976-10-21 | Rca Corp | Electron radiation device |
-
1980
- 1980-08-11 JP JP10920180A patent/JPS5734632A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51120166A (en) * | 1975-03-24 | 1976-10-21 | Rca Corp | Electron radiation device |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5944744A (en) * | 1982-09-08 | 1984-03-13 | Matsushita Electronics Corp | Direct-heated cathode |
US4698835A (en) * | 1984-05-31 | 1987-10-06 | Kabushiki Kaisha Toshiba | X-ray tube apparatus |
US4730353A (en) * | 1984-05-31 | 1988-03-08 | Kabushiki Kaisha Toshiba | X-ray tube apparatus |
JPS61128451A (en) * | 1984-11-27 | 1986-06-16 | Toshiba Corp | X ray tube device |
JPH0418419B2 (en) * | 1984-11-27 | 1992-03-27 | Tokyo Shibaura Electric Co | |
EP0911861A1 (en) * | 1997-09-16 | 1999-04-28 | Eaton Corporation | Filament for ion implanter plasma shower |
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