ATE397779T1 - Referenzstromgenerator und verfahren zum programmieren, einstellen und/oder betreiben des generators - Google Patents

Referenzstromgenerator und verfahren zum programmieren, einstellen und/oder betreiben des generators

Info

Publication number
ATE397779T1
ATE397779T1 AT04751987T AT04751987T ATE397779T1 AT E397779 T1 ATE397779 T1 AT E397779T1 AT 04751987 T AT04751987 T AT 04751987T AT 04751987 T AT04751987 T AT 04751987T AT E397779 T1 ATE397779 T1 AT E397779T1
Authority
AT
Austria
Prior art keywords
generator
reference current
programming
adjusting
operating
Prior art date
Application number
AT04751987T
Other languages
English (en)
Inventor
Lionel Portmann
Maher Kayal
Marc Pastre
Marija Blagojevic
Michel Declercq
Original Assignee
Ecole Polytech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ecole Polytech filed Critical Ecole Polytech
Application granted granted Critical
Publication of ATE397779T1 publication Critical patent/ATE397779T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/12005—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5006—Current
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/4016—Memory devices with silicon-on-insulator cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Credit Cards Or The Like (AREA)
  • Stored Programmes (AREA)
AT04751987T 2003-05-13 2004-05-12 Referenzstromgenerator und verfahren zum programmieren, einstellen und/oder betreiben des generators ATE397779T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US47046203P 2003-05-13 2003-05-13
US47027603P 2003-05-14 2003-05-14
US10/840,902 US6912150B2 (en) 2003-05-13 2004-05-07 Reference current generator, and method of programming, adjusting and/or operating same

Publications (1)

Publication Number Publication Date
ATE397779T1 true ATE397779T1 (de) 2008-06-15

Family

ID=33425219

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04751987T ATE397779T1 (de) 2003-05-13 2004-05-12 Referenzstromgenerator und verfahren zum programmieren, einstellen und/oder betreiben des generators

Country Status (5)

Country Link
US (2) US6912150B2 (de)
EP (1) EP1620859B1 (de)
AT (1) ATE397779T1 (de)
DE (1) DE602004014269D1 (de)
WO (1) WO2004102631A2 (de)

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US20050162931A1 (en) 2005-07-28
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US6912150B2 (en) 2005-06-28
US6980461B2 (en) 2005-12-27
WO2004102631A2 (en) 2004-11-25
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EP1620859A2 (de) 2004-11-25
US20040227166A1 (en) 2004-11-18

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