WO2011137371A2 - Vertical inline cvd system - Google Patents

Vertical inline cvd system Download PDF

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Publication number
WO2011137371A2
WO2011137371A2 PCT/US2011/034619 US2011034619W WO2011137371A2 WO 2011137371 A2 WO2011137371 A2 WO 2011137371A2 US 2011034619 W US2011034619 W US 2011034619W WO 2011137371 A2 WO2011137371 A2 WO 2011137371A2
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WO
WIPO (PCT)
Prior art keywords
substrate
carrier
processing
load lock
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2011/034619
Other languages
English (en)
French (fr)
Other versions
WO2011137371A3 (en
Inventor
Shinichi Kurita
Jozef Kudela
Suhail Anwar
John M. White
Dong-Kil Yim
Hans Wolf
Dennis Zvalo
Makoto Inagawa
Ikuo Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to KR1020127031554A priority Critical patent/KR101932578B1/ko
Priority to JP2013508288A priority patent/JP2013527609A/ja
Priority to CN2011800216142A priority patent/CN102859655A/zh
Publication of WO2011137371A2 publication Critical patent/WO2011137371A2/en
Publication of WO2011137371A3 publication Critical patent/WO2011137371A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3206—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0466—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32889—Connection or combination with other apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment

Definitions

  • the CVD process may be used to process large area substrates, such as flat panel displays or solar panels.
  • CVD may be used to deposit layers such as silicon based films for transistors.
  • Figure 1 is a schematic representation of a vertical, linear CVD system 100 according to one embodiment.
  • the system 100 may be sized to process Attorney Docket No.: APPM/15294PCTP/DISPLAY/AHRDWR/ESONG
  • Figure 5 is a back elevation view of the processing system 100 showing the evacuation system.
  • Figures 6A and 6B are top and partial side views of the processing chamber 1 10B showing the evacuation locations for connecting the vacuum system thereto.
  • the evacuation lines 212, 214, 216, 218, 220, 222, 224, 226 each have a vertical conduit 502A-502D that then couples to a splitter conduit 504A-504D.
  • Each splitter conduit 504A-504D has two connection points 506A- 506H that couple to the processing chamber 1 1 OA, 1 10B.
  • the substrate carrier 904 enters the load lock chambers 108A, 108B from the substrate loading stations 106A, 106B through slit valve doors that seal openings 1 1 18 in the load lock chamber body.
  • the substrate carriers 904 are disposed on a carrier movement mechanism 1 122 that has a plurality of rollers 1 124 that are linearly arranged to engage the elongated slots 1 130 of the substrate carrier 904.
  • the substrate carriers 904 are movable linearly as shown by arrow "F" along the carrier movement mechanism 1 122.
  • Each carrier movement mechanism 1 122 is sized to receive two substrate carriers 904 and moves the carriers through the system 100.
  • the carrier movement mechanism 1 122 is movable laterally as shown by arrows Attorney Docket No.: APPM/15294PCTP/DISPLAY/AHRDWR/ESONG
  • the substrate carriers 904 enter the processing chambers 1 10A, 1 10B to position the substrates 906 within the processing chambers 1 1 OA, 1 10B.
  • the substrate carriers 904 then retract back into the load lock chambers 108A, 108B while the substrate 906 remains within the processing chambers 1 1 OA, 1 10B for processing.
  • the substrate carriers 904 move into the processing chambers 1 1 OA, 1 10B on rollers 1 128 present in a processing chamber carrier movement mechanism 1 126.
  • the carrier movement mechanisms 1 122 include motors not shown which power the rollers 1 124 that impart motion to the carriers.
  • the rollers 1 128 are linearly arranged to engage the elongated slots 1 130 present in the substrate carrier 904.
  • the substrate is then sandwiched between the shadow frame 1004 and platen 1008 as the platen 1008, substrate and shadow frame 1008 are moved to a location closer to the microwave antennas 608 for processing. After processing, the sequence is reversed to remove the substrate from the system 100.
  • one generator can power one linear plasma source or several sources in parallel or in series, or in combination of both.
  • the antenna-ends can be driven in phase or out of phase; the phases of driving voltages can be adjustable by passive elements (LC,) or changed actively on the generator side; the phase adjustment can be static or dynamic (varying in time).
  • the generators can be operated at slightly different frequencies, which also changes phases of driving voltages dynamically.
  • the processing portion and the staging portion to contain deposition gases and cleaning to the processing portion.
  • the slit valves 1312a, 1312b may be replaced by baffles or a gas curtain that simply permit the substrates 1408 and carriers to pass therethrough into the processing chamber 1306.
  • the carrier moves at a substantially constant speed to ensure that the portion of the substrate 1408 that first enters the processing chamber 1306 receives substantially the same conditions (i.e., time exposed to the processing conditions) as the portion of the substrate 1408 that is the last to enter the processing chamber 1306.
  • FIG. 15 is a schematic top view of a vertical CVD processing system 1500 according to another embodiment.
  • the system 1500 includes two dual-track load lock chambers 1522a, 1522b that have environmentally isolated areas 1524a- 1524d separated by a wall. Coupled between the load lock chambers 1522a, 1522b is a processing chamber 1504.
  • the processing chamber 1504 has a processing portion 1508 having one or more processing sources 1520 which may be a processing source as discussed above in regards to Figure 14.
  • On either side of the processing portion 1508 is an acceleration/deceleration portion 1506a, 1506b.
  • Each acceleration/deceleration portion 1506a, 1506b is coupled to a respective load lock chamber 1522a, 1522b.
  • Substrates 1518 may be loaded onto carriers (not shown) in the load lock chambers 1522a, 1522b by opening the doors 1514a-1514d to the respective environmentally isolated area 1524a-1524d and placing a substrate 1518 onto a carrier.
  • the substrates 1518 may be removed from a substrate storage unit 1512a-1512d and placed onto the carrier by a corresponding robot 1510a-1510d.
  • the substrates 1518 may be removed from the carrier by a robot 1510a-1510d and placed into a substrate storage unit 1512a-1512d to await further processing.
  • the load lock Attorney Docket No.: APPM/15294PCTP/DISPLAY/AHRDWR/ESONG
  • chambers 1522a, 1522b handle two substrates at a time, throughput is increased by reducing the number of pumping cycles per substrate.
  • the substrate 1518 and carrier pass through the baffle 1526a that defines that boundary between the acceleration/deceleration portion 1506a and the processing portion 1508.
  • the substrate and carrier on the inner track is moved outward onto the outer track.
  • the substrates 1518 and the carriers move through the processing portion 1508 at a substantially constant speed so that the entire substrate 1518 is exposed to the processing conditions for substantially the same amount of time. By permitting the substrate to be exposed to the processing conditions for the substantially same amount of time, uniform processing of the substrate 1518 may be obtained. It is also contemplated that the speed through the portion 1508 may be varied.
  • the carrier may also be removed from the system 1500 and transported back to the environmentally isolated area 1524a of the load lock chamber 1522a. Because the carrier is exposed to atmosphere, the carrier may experience temperature cycling.
  • the load lock chambers 1522a, 1522b may each be equipped with a heating element may be present. Additionally, cooling means may be present in the load lock chambers 1522a, 1522b to cool the substrate to a desired temperature prior to removal from the load lock chamber 1522a, 1522b.
  • FIG. 16 is a schematic top view of a vertical CVD processing system 1600 according to another embodiment.
  • the system 1600 includes two dual-track load lock chambers 1622a, 1622b that have environmentally isolated areas 1624a- 1624d separated by a wall. Coupled between the load lock chambers 1622a, 1622b is a processing chamber 1604.
  • the processing chamber 1604 has a processing area 1608 having one or more processing sources 1620 which may be a processing source as discussed above in regards to Figure 14.
  • On either side of the processing area 1608 is an acceleration/deceleration area 1606a, 1606b.
  • Each acceleration/deceleration area 1606a, 1606b is coupled to a respective load lock chamber 1622a, 1622b.
  • the system 1600 may operate as a dynamic, reciprocating processing system.
  • a substrate 1618 may be obtained from a substrate storage unit 1612a by a robot 1610a.
  • the door 1614a to the environmentally isolated area 1624a may be opened and the substrate 1618 may be placed on a carrier that is present in the environmentally isolated area 1624a.
  • the door 1614a then closes.
  • a slit valve door 1616a is then opened and the substrate 1618 and carrier move through the slit valve door 1616a.
  • the slit valve door 1616a closes once the substrate 1618 and carrier are entirely within the acceleration/deceleration area 1606a.
  • the substrate 1618 and carrier are then accelerated to a substantially constant speed.
  • the substrate 1618 and carrier pass through the baffle 1626a that defines that boundary between the acceleration/deceleration area 1606a and the processing area 1608.
  • the substrate 1618 and carrier move through the processing area 1608 at a substantially constant speed so that the Attorney Docket No.: APPM/15294PCTP/DISPLAY/AHRDWR/ESONG
  • the substrate 1618 and carrier pass through baffle 1626b back into the acceleration/deceleration area 1606a where the substrate 1618 and carrier decelerate and may even stop.
  • Slit valve door 1616a is opened and the carrier and substrate 1618 move into the environmentally isolated area 1624a of the load lock chamber 1622a.
  • the door 1614a is opened and the substrate 1618 is retrieved by the robot 1610a and placed in the substrate storage unit 1612a.
  • a substrate 1618 may then be removed from the substrate storage unit 1612a and placed into the carrier by the robot 1610b to repeat the same process by moving the substrate 1618 and carrier though the system 1600.
  • a substrate 1618 may move through the system 1600 from the opposite side of the system 1600.
  • a substrate 1618 may be retrieved from a substrate storage unit 1612c by a robot 1610c which places the substrate 1618 into a carrier present in the environmentally isolated area 1624c of load lock chamber 1622b.
  • the door 1614c to the environmentally isolated area 1624c is then closed.
  • a slit valve door 1616c may be opened to permit the substrate 1618 and carrier to move into the Attorney Docket No.: APPM/15294PCTP/DISPLAY/AHRDWR/ESONG
  • the substrate 1618 and carrier exit the processing area 1608 by passing through the baffle 1626b into the acceleration/deceleration area 1606b.
  • the substrate 1618 and carrier then pass through the slit valve door 1616c into the environmentally isolated area 1624c of load lock chamber 1622b.
  • Door 1614c is opened and robot 1610c retrieves the substrate 1618 and places the substrate 1618 into substrate storage unit 1612c.
  • a substrate 1618 may then be removed from the substrate storage unit 1612c and placed into the carrier by the robot 1610c to repeat the same process by moving the substrate 1618 and carrier though the system 1600. Simultaneously, substrates from the storage units 1612a- 1612d are processed on the opposite side of the plasma processing sources 1620.
  • FIG. 17 is a schematic top view of a vertical CVD processing system 1700 according to another embodiment.
  • Robots 1702a, 1702b are present for loading/unloading substrates 1704 from/to substrate storage units 1706a, 1706b and placing the substrates 1704 into or removing the substrates 1704 from carriers that move the substrates 1704 through the processing system 1700.
  • the processing system 1700 also includes a substrate loading/unloading station 1706 which serves as an input load lock chamber that is disposed adjacent to a load lock chamber 1708.
  • the load lock chamber 1708 is coupled to a processing chamber 1710.
  • the processing chamber 1710 has processing areas 1712a, 1712b and a substrate shifting area 1714.
  • the processing chamber 1710 may be configured as described with reference to Figure 14 above.
  • a substrate 1704 is retrieved from a substrate storage unit 1706b by robot 1702b.
  • the door 1716b to the loading/unloading station 1706 is opened and the substrate 1704 is placed on the carrier.
  • the door 1716b is closed and the station 1706 is pumped down.
  • Slit valve door 1718c then opens and the substrate 1704 and carrier move into the first Attorney Docket No.: APPM/15294PCTP/DISPLAY/AHRDWR/ESONG
  • the substrate 1704 and carrier While in the first portion 1720, the substrate 1704 and carrier are accelerated to a substantially constant speed. The substrate 1704 and carrier then pass through a baffle 1722b to enter the processing area 1712b of the processing chamber 1710. The substrate 1704 is processed as the substrate 1704 and carrier move through the processing area 1712. The substrate 1704 and carrier pass through a baffle 1726c into the substrate shifting area 1714. Once in the substrate shifting area 1714, the substrate 1704 and carrier are shifted in the direction shown by arrow L to an outer return track. The substrate 1704 and carrier then pass by the outside of the processing area 1712b through a baffle 1726d. The substrate 1704 and carrier are separated from the processing source 1724 by a wall 1728b.
  • FIG. 18 is a schematic top view of a vertical CVD processing system 1800 according to another embodiment.
  • the processing system 1800 includes a load lock chamber 1802 and a processing chamber 1804.
  • the processing chamber 1804 includes an acceleration/deceleration area 1806, a processing area 1808 having a processing source 1810, and another acceleration/deceleration area 1812.
  • a substrate is retrieved from a substrate storage unit 1828a by a robot 1826a.
  • a door to a first environmentally isolated area 1824a of the load Attorney Docket No.: APPM/15294PCTP/DISPLAY/AHRDWR/ESONG
  • the carrier 1818 moves onto a turntable 1816 where the carrier 1818 is rotated as shown by arrow N so that the carrier 1818 can enter the environmentally isolated area 1824a of the load lock chamber 1802 to receive another substrate.
  • the second empty carrier is then routed to the turntable 1816 for positioning a second substrate in the area 1824a as described above.
  • the substrates 1904 and carriers move through the processing area 1912a.
  • the substrates 1904 and carriers pass through a baffle 1926a into the substrate shifting area 1914. Once in the substrate shifting area 1914, the substrates 1904 and carrier are shifted in the direction shown by arrow O to an outer return track.
  • the substrates 1904 and carriers then reverse direction and pass outward of the processing area 1912a through a baffle 1926b.
  • the substrates 1904 and carrier are separated from the processing source 1924 by a wall 1928a.
  • a slit valve door 1930a then opens to permit the substrates 1904 and carrier to enter the load lock chamber 1908.
  • a slit valve door 1930b then opens to permit the substrates 1904 and carrier to enter the load lock chamber 1908.
  • a slit valve door 19 8d may then open to permit the substrates 1904 and carriers to exit the load lock chamber 1908 where the substrates 1904 may be retrieved by the robot 1902b and placed into the substrate storage unit 1906b.
  • system 1900 could operate as a static system whereby the baffles are replaced with slit valves and the substrate and carrier oscillate within the processing area.
  • a heating element or infrared heating source may be present within the loading/unloading station 1906 to maintain the carrier at an acceptable temperature and prevent thermal cycling as described above.
  • process gases for example such as SiH , Si2H 6 and NH 3 for SiN deposition, to enter the diffusion plasma region.
  • the load lock chambers 2308A, 2308B may have a carrier plate 2312 that carries the substrate 2306 and the substrate frame 2330. Similar to the loader/unloader carriages 2302A, 2302B, the load lock chambers 2308A, 2308B each have a set of linearly aligned inside rollers 2314A upon which the carrier plate 2312 will move, a set of linearly aligned inside rollers 2316A upon which the substrate 2306 and frame 2330 will move in from and out to atmosphere from the load lock, a set of linearly aligned outside rollers 2314B upon which the carrier plate 2312 will move, and a set of linearly aligned outside rollers 2316B upon which the substrate 2306 and frame 2330 will move in from and out to atmosphere from the load lock.
  • the processed substrate 2306, frame 2330 and carrier 2312 enter a load lock chamber 2308A, 2308B from the processing chamber 2310 along the same rollers 2314A, 2314B, upon which they entered the processing chamber 2310.
  • the frame 2330 and carrier 2312 will always travel along the same set of rollers 2314A, 2314B.
  • the substrates, both processed and unprocessed may travel along any of the rollers 2314A, 2314B, 2316A, 2316B, 2304A, 2304B.
  • a CVD process may proceed as follows.
  • Substrates 2306 may be loaded into empty substrate frames 2330 in the loader/unloader carriages 2302A, 2302B.
  • the substrates 2306 are clamped to the frames 2330 with clips (not shown) to hold the substrates 2306 in a predetermined position on the frame 2330.
  • the substrates that have just been processed may be received in the load lock chambers 2308A, 2308B from the processing chamber 2310.
  • the load lock chambers 2308A, 2308B may then be Attorney Docket No.: APPM/15294PCTP/DISPLAY/AHRDWR/ESONG
  • a processed substrate 2306 and carrier 2312 enter a loader/unloader carriage 2302A, 2302B along the inside rollers 2304A.
  • the processed substrate 2306 will be unloaded and a new, unprocessed substrate 2306 will be placed into the carrier 2312 to then enter a load lock chamber 2308A, 2308B along its inner rollers 2316A.
  • the very next processed substrate 2306 and carrier 2312 that enters the loader/unloader carriage 2302A, 2302B will enter along the outside rollers 2304B.
  • the doors to the load lock chambers 2308A, 2308B may the close and the load lock chambers 2308A, 2308B may then begin to pump down to the appropriate vacuum level.
  • FIG. 25 is a schematic system layout for a dynamic PECVD system 2500 according to another embodiment.
  • the system 2500 includes substrate loading/unloading stations 2506A, 2506B where substrates 2502 and carriers 2504 are loaded/unloaded to/from the system 2500.
  • the loading/unloading stations 2506A, 2506B each have inner rollers 2508A and outer rollers 2508B.
  • the substrates 2502 are loaded into carriers 2504 and placed onto the inner rollers 2508A before entering a load lock chamber 2512A, 2512B.
  • the processed substrates 2502 enter the loading/unloading stations 2506A, 2506B from a load lock chamber 2512A, 2512B on the outer rollers 2508B.
  • Slit valves 2510 Attorney Docket No.: APPM/15294PCTP/DISPLAY/AHRDWR/ESONG
  • the processing chamber 2522 includes a staging area 2524, a processing area 2526 and a shuffle chamber area 2528. Each area 2524, 2526, 2528 are partially isolated from the adjacent area 2524, 2526, 2528 by an intra- chamber barrier 2536, 2538.
  • the chamber barriers 2536, 2538 are shutters, but it is to be understood that other chamber barriers may be utilized as well such as slit valves or gas curtains.
  • the substrates 2502, carrier 2504 and shadow frame 2514 enter the staging area 2524 along inner rollers 2530A.
  • the substrates 2502, carrier 2504 and shadow frame 2514 pass by the intra-chamber barrier 2536 and into the processing area 2526 where one or more microwave antennas 2540 are disposed.
  • 2512A, 2512B will vent and a slit valve door 2510 will open to permit the substrate 2502 and carrier 2504 to enter the loading/unloading station 2506A, 2506B along the outer rollers 2508B.
  • the substrate 2502 may then be removed from the system.
  • substrates 2502 may be loaded from substrate cassettes to the carriers 2504 and placed into a loading/unloading station 2506A, 2506B.
  • the substrates 2502 are clamped to the carriers 2504 with clips (not shown) to hold the substrates 2502 in a predetermined position on the carrier 2504.
  • clips not shown
  • carriers 2504 have just completed a vacuum exchange to receive processing substrates 2502 from the processing chamber 2522.
  • the load lock chambers 2512A, 2512B begin to vent to atmosphere while the shadow frames 2514 are moved to opposite sides of the load lock chambers 2512A, 2512B adjacent the inner rollers 2516A.
  • the time period that a substrate 2502 is within a load lock chamber 2512A, 2512B shall be approximately equal to the time period that a substrate 2502 is passing through the processing area 2526 and staging area 2524 collectively and also equal to the time period that a substrate 2502 is passing into and through the shuffle chamber area and along the outside rollers 2544B, 2542B, 2530B.
  • the substrate 2502 passes Attorney Docket No.: APPM/15294PCTP/DISPLAY/AHRDWR/ESONG
  • the substrate may be processed as follows.
  • a substrate 2502 and carrier 2504 has just entered the station 2600 on the outer rollers 2508B.
  • FIGS 27A-27D are schematic illustrations of the load lock shifter mechanism 2700.
  • the load lock shifter mechanism 2700 includes a frame assembly 2704 that may be at atmospheric pressure. Within the frame assembly 2704 is a vertically extending support beam 2716, multiple horizontally extending support beams 2706 that extend from the support beam 2716, and a shadow frame engaging beam 2712.
  • the beams 2716, 2706, 2712 are all under vacuum and therefore bellows 2708, 2710 may be used to seal the beams 2716, 2706, 2712 within the vacuum environment while permitting movement of the beams 2716, 2706, 2712.
  • the carrier 2504 may have a plurality of pins (not shown) as well that each engage a corresponding slot (not shown) in the shadow frame 2514 to hold the shadow frame in a position coupled with the carrier 2504.
  • the beams 2716, 2706, 2712 then move vertically as shown by arrows "BB” to lift the shadow frame 2514 from the plurality of pins (not shown) in the carrier 2504 that couple the shadow frame 2514 to the carrier 2504.
  • the shifter mechanism 2700 then moves laterally as shown by arrows "CC” to disengage the shadow frame 2514 from the carrier 2504.
  • FIG. 28 is a schematic cross sectional illustration of a vertical CVD system according to another embodiment.
  • the system 2800 includes substrate unloading and loading stations 2802 and a substrate transferring shuttle 2804.
  • FIG. 29 is a schematic top illustration of a vertical CVD system 2900 according to another embodiment.
  • the system 2900 includes loading/unloading robots 2902 separated from load lock chambers 2906 by doors 2904.
  • the load lock chambers 2906 include heater transfer elements 2908, such as infrared heaters, to heat the substrates prior to entering the processing chamber 2910 through slit valve openings 2914.
  • Within the processing chamber 2910 is one or more plasma generators 2912.
  • FIG 31 is a schematic illustration of a processing chamber 3100 according to another embodiment.
  • the processing chamber includes a substrate temperature stabilizer 3102 (i.e. , a heater or cooler plate), one or more plasma generators 3104, process gas tubes 3106 that may comprise ceramic material, pumping ports 3108 and a pumping channel 31 10. Cooling gas is delivered around the plasma generator 3104, which may be surrounded by a dielectric tube or a ceramic tube or quartz.
  • Figure 32 is a schematic illustration of the processing chamber 3100 showing the precursor gas delivered through ends 3204 gas introduction elements 3202 disposed between plasma generators 3104 and other precursor gas delivered through the center 3206 of the gas introduction elements.
  • FIG 33 is a schematic illustration of the bottom of a processing chamber 3300 according to one embodiment.
  • the chamber 3300 includes a non- contact magnetic support for holding the substrate in place during processing, a processing gas seal 3304 to prevent introduction of processing gas into undesired areas of the chamber, a liner actuator stepping driving mechanism 3306, a purge gas line 3308 for introducing purge gas, and a pumping channel 3310 for evacuating the processing chamber 3300.

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JP2013508288A JP2013527609A (ja) 2010-04-30 2011-04-29 縦型インラインｃｖｄシステム
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KR20130057441A (ko) 2013-05-31
JP5903429B2 (ja) 2016-04-13
KR20130062942A (ko) 2013-06-13
JP2013526067A (ja) 2013-06-20
CN102859034B (zh) 2015-04-29
TWI551718B (zh) 2016-10-01
CN102859655A (zh) 2013-01-02
WO2011137373A2 (en) 2011-11-03
US20120031333A1 (en) 2012-02-09
WO2011137373A3 (en) 2012-02-09
WO2011137373A4 (en) 2012-03-15
KR101932578B1 (ko) 2018-12-28
TW201204865A (en) 2012-02-01
JP2013527609A (ja) 2013-06-27
TW201202472A (en) 2012-01-16
CN102859034A (zh) 2013-01-02
TWI544107B (zh) 2016-08-01
US9922854B2 (en) 2018-03-20
WO2011137371A3 (en) 2012-03-01
US9324597B2 (en) 2016-04-26
US20120031335A1 (en) 2012-02-09
KR101796656B1 (ko) 2017-11-13

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