WO2003038883A1 - Polishing fluid and polishing method - Google Patents

Polishing fluid and polishing method Download PDF

Info

Publication number
WO2003038883A1
WO2003038883A1 PCT/JP2002/011370 JP0211370W WO03038883A1 WO 2003038883 A1 WO2003038883 A1 WO 2003038883A1 JP 0211370 W JP0211370 W JP 0211370W WO 03038883 A1 WO03038883 A1 WO 03038883A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
metal
water
polishing fluid
oxidizing agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2002/011370
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Jin Amanokura
Takafumi Sakurada
Sou Anzai
Masato Fukasawa
Shouichi Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to US10/493,867 priority Critical patent/US20050050803A1/en
Priority to JP2003541040A priority patent/JPWO2003038883A1/ja
Priority to CNB028265513A priority patent/CN100386850C/zh
Publication of WO2003038883A1 publication Critical patent/WO2003038883A1/ja
Anticipated expiration legal-status Critical
Priority to US11/802,813 priority patent/US8084362B2/en
Priority to US12/320,752 priority patent/US8084363B2/en
Priority to US13/299,699 priority patent/US8481428B2/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
PCT/JP2002/011370 2001-10-31 2002-10-31 Polishing fluid and polishing method Ceased WO2003038883A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US10/493,867 US20050050803A1 (en) 2001-10-31 2002-10-31 Polishing fluid and polishing method
JP2003541040A JPWO2003038883A1 (ja) 2001-10-31 2002-10-31 研磨液及び研磨方法
CNB028265513A CN100386850C (zh) 2001-10-31 2002-10-31 研磨液及研磨方法
US11/802,813 US8084362B2 (en) 2001-10-31 2007-05-25 Polishing slurry and polishing method
US12/320,752 US8084363B2 (en) 2001-10-31 2009-02-04 Polishing slurry and polishing method
US13/299,699 US8481428B2 (en) 2001-10-31 2011-11-18 Polishing slurry and polishing method

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2001-334376 2001-10-31
JP2001334376 2001-10-31
JP2002010280 2002-01-18
JP2002-10280 2002-01-18
JP2002-160181 2002-05-31
JP2002160181 2002-05-31

Related Child Applications (3)

Application Number Title Priority Date Filing Date
US10/493,867 A-371-Of-International US20050050803A1 (en) 2001-10-31 2002-10-31 Polishing fluid and polishing method
US10493867 A-371-Of-International 2002-10-31
US11/802,813 Division US8084362B2 (en) 2001-10-31 2007-05-25 Polishing slurry and polishing method

Publications (1)

Publication Number Publication Date
WO2003038883A1 true WO2003038883A1 (en) 2003-05-08

Family

ID=27347759

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/011370 Ceased WO2003038883A1 (en) 2001-10-31 2002-10-31 Polishing fluid and polishing method

Country Status (6)

Country Link
US (4) US20050050803A1 (https=)
JP (3) JPWO2003038883A1 (https=)
KR (1) KR100704690B1 (https=)
CN (2) CN101058713B (https=)
TW (2) TW200300168A (https=)
WO (1) WO2003038883A1 (https=)

Cited By (29)

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JP2005109257A (ja) * 2003-09-30 2005-04-21 Fujimi Inc 研磨用組成物
JP2005123482A (ja) * 2003-10-17 2005-05-12 Fujimi Inc 研磨方法
JP2005129822A (ja) * 2003-10-27 2005-05-19 Hitachi Chem Co Ltd 研磨液及び研磨方法
JP2005162893A (ja) * 2003-12-03 2005-06-23 Kanto Chem Co Inc 金属膜のエッチング液組成物
WO2006030595A1 (ja) * 2004-09-14 2006-03-23 Hitachi Chemical Company, Ltd. Ｃｍｐ用研磨スラリー
JP2006510807A (ja) * 2002-12-16 2006-03-30 スリーエム イノベイティブ プロパティズ カンパニー 銅配線および／またはフィルムを研磨および／または洗浄する方法およびそのための組成物
WO2007052862A1 (en) * 2005-11-04 2007-05-10 Cheil Industries Inc. Chemical mechanical polishing slurry composition for polishing polycrystalline silicon film and method for preparing the same
JP2007150184A (ja) * 2005-11-30 2007-06-14 Jsr Corp 有機膜研磨用化学的機械的研磨スラリー、化学的機械的研磨方法、ならびに半導体装置の製造方法
JP2008160112A (ja) * 2006-12-21 2008-07-10 Dupont Air Products Nanomaterials Llc 銅の化学機械平坦化用組成物
JP2008182213A (ja) * 2006-12-21 2008-08-07 Dupont Air Products Nanomaterials Llc 化学機械研磨の間に銅除去速度に対して低ｋを調整する方法およびスラリー
KR100854483B1 (ko) * 2004-09-14 2008-08-26 히다치 가세고교 가부시끼가이샤 Ｃｍｐ용 연마 슬러리
EP1724819A4 (en) * 2004-03-08 2008-10-15 Asahi Glass Co Ltd POLISHING AND POLISHING PROCESS
JP2009507659A (ja) * 2005-09-09 2009-02-26 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド 導電性炭化水素流体
JP2009117789A (ja) * 2007-10-17 2009-05-28 Hitachi Chem Co Ltd Ｃｍｐ用研磨液及び研磨方法
JP2009147394A (ja) * 2009-03-30 2009-07-02 Hitachi Chem Co Ltd 研磨液及び研磨方法
JP2009158810A (ja) * 2007-12-27 2009-07-16 Toshiba Corp 化学的機械的研磨用スラリーおよび半導体装置の製造方法
JP2010010717A (ja) * 2004-03-08 2010-01-14 Asahi Glass Co Ltd 研磨剤および研磨方法
JP2010503232A (ja) * 2006-09-05 2010-01-28 キャボット マイクロエレクトロニクス コーポレイション 水に可溶性酸化剤を使用する炭化ケイ素の研磨方法
JP2011513991A (ja) * 2008-03-05 2011-04-28 キャボット マイクロエレクトロニクス コーポレイション 水溶性酸化剤を用いた炭化ケイ素の研磨方法
US8062547B2 (en) 2005-06-03 2011-11-22 K.C. Tech Co., Ltd. CMP slurry, preparation method thereof and method of polishing substrate using the same
CN102352187A (zh) * 2007-07-05 2012-02-15 日立化成工业株式会社 金属膜用研磨液及研磨方法
JP2012067254A (ja) * 2010-09-27 2012-04-05 Fujifilm Corp 半導体基板用洗浄剤、これを利用した洗浄方法及び半導体素子の製造方法
CN1837320B (zh) * 2004-03-24 2012-05-09 福吉米株式会社 抛光用组合物及抛光方法
JP2012146974A (ja) * 2010-12-24 2012-08-02 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
JP2014140056A (ja) * 2009-08-19 2014-07-31 Hitachi Chemical Co Ltd Ｃｍｐ研磨液及び研磨方法
KR101476656B1 (ko) * 2007-03-26 2014-12-26 후지필름 가부시키가이샤 연마액
US9799532B2 (en) 2010-02-15 2017-10-24 Hitachi Chemical Company, Ltd. CMP polishing solution and polishing method
US9944827B2 (en) 2010-06-29 2018-04-17 Hitachi Chemical Company, Ltd. CMP polishing solution and polishing method
US10796921B2 (en) 2009-07-16 2020-10-06 Hitachi Chemical Company, Ltd. CMP fluid and method for polishing palladium

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TWI282360B (en) * 2002-06-03 2007-06-11 Hitachi Chemical Co Ltd Polishing composition and polishing method thereof
KR100596865B1 (ko) * 2004-01-05 2006-07-04 주식회사 하이닉스반도체 고평탄성 슬러리 조성물 및 이를 이용한 층간 절연막의ｃｍｐ 방법
US20050189322A1 (en) * 2004-02-27 2005-09-01 Lane Sarah J. Compositions and methods for chemical mechanical polishing silica and silicon nitride
TW200613485A (en) * 2004-03-22 2006-05-01 Kao Corp Polishing composition
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
US7449124B2 (en) * 2005-02-25 2008-11-11 3M Innovative Properties Company Method of polishing a wafer
EP2275241B1 (de) * 2005-08-25 2012-10-17 Freiberger Compound Materials GmbH Drahtsäge und Verfahren zum Trennen eines Werkstücks mittels Drahtsägen
JP4390757B2 (ja) * 2005-08-30 2009-12-24 花王株式会社 研磨液組成物
WO2007029465A1 (ja) * 2005-09-09 2007-03-15 Asahi Glass Company, Limited 研磨剤、被研磨面の研磨方法および半導体集積回路装置の製造方法
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JP2007103463A (ja) * 2005-09-30 2007-04-19 Sumitomo Electric Ind Ltd ポリシングスラリー、ＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶の表面処理方法およびＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶基板
KR100827594B1 (ko) * 2006-11-07 2008-05-07 제일모직주식회사 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 및 이의 제조방법
US8512593B2 (en) * 2005-11-04 2013-08-20 Cheil Industries, Inc. Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same
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