TW200300168A - Polishing fluid and polishing method - Google Patents

Polishing fluid and polishing method Download PDF

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Publication number
TW200300168A
TW200300168A TW091132305A TW91132305A TW200300168A TW 200300168 A TW200300168 A TW 200300168A TW 091132305 A TW091132305 A TW 091132305A TW 91132305 A TW91132305 A TW 91132305A TW 200300168 A TW200300168 A TW 200300168A
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TW
Taiwan
Prior art keywords
honing
patent application
acid
fluid
scope
Prior art date
Application number
TW091132305A
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English (en)
Chinese (zh)
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TWI308926B (https=
Inventor
Takafumi Sakurada
Jin Amanokura
Sou Aniai
Masato Fukasawa
Shouichi Sasaki
Original Assignee
Hitachi Chemical Co Ltd
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Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW200300168A publication Critical patent/TW200300168A/zh
Application granted granted Critical
Publication of TWI308926B publication Critical patent/TWI308926B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW091132305A 2001-10-31 2002-10-31 Polishing fluid and polishing method TW200300168A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001334376 2001-10-31
JP2002010280 2002-01-18
JP2002160181 2002-05-31

Publications (2)

Publication Number Publication Date
TW200300168A true TW200300168A (en) 2003-05-16
TWI308926B TWI308926B (https=) 2009-04-21

Family

ID=27347759

Family Applications (2)

Application Number Title Priority Date Filing Date
TW091132305A TW200300168A (en) 2001-10-31 2002-10-31 Polishing fluid and polishing method
TW097100408A TWI314950B (en) 2001-10-31 2002-10-31 Polishing slurry and polishing method

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW097100408A TWI314950B (en) 2001-10-31 2002-10-31 Polishing slurry and polishing method

Country Status (6)

Country Link
US (4) US20050050803A1 (https=)
JP (3) JPWO2003038883A1 (https=)
KR (1) KR100704690B1 (https=)
CN (2) CN100386850C (https=)
TW (2) TW200300168A (https=)
WO (1) WO2003038883A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8501625B2 (en) 2007-07-10 2013-08-06 Hitachi Chemical Co., Ltd. Polishing liquid for metal film and polishing method
US9564337B2 (en) 2010-12-24 2017-02-07 Hitachi Chemical Co., Ltd. Polishing liquid and method for polishing substrate using the polishing liquid
TWI601808B (zh) * 2016-03-01 2017-10-11 羅門哈斯電子材料Ｃｍｐ控股公司 化學機械研磨方法

Families Citing this family (110)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050050803A1 (en) * 2001-10-31 2005-03-10 Jin Amanokura Polishing fluid and polishing method
TWI282360B (en) * 2002-06-03 2007-06-11 Hitachi Chemical Co Ltd Polishing composition and polishing method thereof
US6858124B2 (en) * 2002-12-16 2005-02-22 3M Innovative Properties Company Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor
JP4541674B2 (ja) * 2003-09-30 2010-09-08 株式会社フジミインコーポレーテッド 研磨用組成物
JP2005123482A (ja) * 2003-10-17 2005-05-12 Fujimi Inc 研磨方法
JP4774669B2 (ja) * 2003-10-27 2011-09-14 日立化成工業株式会社 研磨液及び研磨方法
JP4428995B2 (ja) * 2003-12-03 2010-03-10 関東化学株式会社 金属膜のエッチング液組成物
KR100596865B1 (ko) * 2004-01-05 2006-07-04 주식회사 하이닉스반도체 고평탄성 슬러리 조성물 및 이를 이용한 층간 절연막의ｃｍｐ 방법
US20050189322A1 (en) * 2004-02-27 2005-09-01 Lane Sarah J. Compositions and methods for chemical mechanical polishing silica and silicon nitride
CN100468647C (zh) * 2004-03-08 2009-03-11 旭硝子株式会社 研磨剂以及研磨方法
JP2005294798A (ja) * 2004-03-08 2005-10-20 Asahi Glass Co Ltd 研磨剤および研磨方法
TW200613485A (en) * 2004-03-22 2006-05-01 Kao Corp Polishing composition
JP4644434B2 (ja) * 2004-03-24 2011-03-02 株式会社フジミインコーポレーテッド 研磨用組成物
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
US20080105651A1 (en) * 2004-09-14 2008-05-08 Katsumi Mabuchi Polishing Slurry for Cmp
KR100854483B1 (ko) * 2004-09-14 2008-08-26 히다치 가세고교 가부시끼가이샤 Ｃｍｐ용 연마 슬러리
US7449124B2 (en) * 2005-02-25 2008-11-11 3M Innovative Properties Company Method of polishing a wafer
KR100641348B1 (ko) 2005-06-03 2006-11-03 주식회사 케이씨텍 Ｃｍｐ용 슬러리와 이의 제조 방법 및 기판의 연마 방법
EP1757419B1 (de) * 2005-08-25 2012-10-17 Freiberger Compound Materials GmbH Verfahren, Vorrichtung und Slurry zum Drahtsägen
JP4390757B2 (ja) * 2005-08-30 2009-12-24 花王株式会社 研磨液組成物
KR20080042043A (ko) * 2005-09-09 2008-05-14 아사히 가라스 가부시키가이샤 연마제, 피연마면의 연마 방법 및 반도체 집적 회로 장치의제조 방법
US7708904B2 (en) * 2005-09-09 2010-05-04 Saint-Gobain Ceramics & Plastics, Inc. Conductive hydrocarbon fluid
US7572741B2 (en) * 2005-09-16 2009-08-11 Cree, Inc. Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
JP2007103463A (ja) * 2005-09-30 2007-04-19 Sumitomo Electric Ind Ltd ポリシングスラリー、ＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶の表面処理方法およびＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶基板
KR100643628B1 (ko) * 2005-11-04 2006-11-10 제일모직주식회사 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 및 이의 제조방법
US8512593B2 (en) * 2005-11-04 2013-08-20 Cheil Industries, Inc. Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same
KR100827594B1 (ko) * 2006-11-07 2008-05-07 제일모직주식회사 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 및 이의 제조방법
JP4868840B2 (ja) * 2005-11-30 2012-02-01 Ｊｓｒ株式会社 半導体装置の製造方法
TWI305802B (en) * 2006-03-16 2009-02-01 Epoch Material Co Ltd Chemical mechanical polishing composition
JPWO2007123235A1 (ja) * 2006-04-24 2009-09-10 日立化成工業株式会社 Ｃｍｐ用研磨液及び研磨方法
US8759216B2 (en) * 2006-06-07 2014-06-24 Cabot Microelectronics Corporation Compositions and methods for polishing silicon nitride materials
US7550092B2 (en) * 2006-06-19 2009-06-23 Epoch Material Co., Ltd. Chemical mechanical polishing composition
US7678700B2 (en) * 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US8591764B2 (en) * 2006-12-20 2013-11-26 3M Innovative Properties Company Chemical mechanical planarization composition, system, and method of use
US20080149884A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing
US20080148652A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
KR100831265B1 (ko) * 2006-12-29 2008-05-22 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
JP5285866B2 (ja) * 2007-03-26 2013-09-11 富士フイルム株式会社 研磨液
JP2008307631A (ja) * 2007-06-13 2008-12-25 Asahi Glass Co Ltd ガラス基板研磨方法
TWI419218B (zh) * 2007-07-05 2013-12-11 日立化成工業股份有限公司 金屬膜用研磨液以及研磨方法
JP2009050920A (ja) * 2007-08-23 2009-03-12 Asahi Glass Co Ltd 磁気ディスク用ガラス基板の製造方法
JP5646996B2 (ja) 2007-09-21 2014-12-24 キャボット マイクロエレクトロニクス コーポレイション 研磨組成物およびアミノシランを用いて処理された研削剤粒子の使用方法
EP2048207A1 (en) * 2007-10-11 2009-04-15 STMicroelectronics S.r.l. Method of planarizing chalcogenide alloys, in particular for use in phase change memory devices
JP5277640B2 (ja) * 2007-10-17 2013-08-28 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
JP2009123880A (ja) * 2007-11-14 2009-06-04 Showa Denko Kk 研磨組成物
JP2009158810A (ja) * 2007-12-27 2009-07-16 Toshiba Corp 化学的機械的研磨用スラリーおよび半導体装置の製造方法
US9202709B2 (en) * 2008-03-19 2015-12-01 Fujifilm Corporation Polishing liquid for metal and polishing method using the same
JP5170477B2 (ja) * 2008-09-08 2013-03-27 三菱瓦斯化学株式会社 銅配線表面保護液および半導体回路素子の製造方法
JP5423992B2 (ja) * 2008-09-19 2014-02-19 三菱瓦斯化学株式会社 銅配線表面保護液および半導体回路の製造方法
JP5469840B2 (ja) * 2008-09-30 2014-04-16 昭和電工株式会社 炭化珪素単結晶基板の製造方法
CN102203952A (zh) * 2008-10-29 2011-09-28 三菱瓦斯化学株式会社 以氧化锌为主要成分的透明导电膜的纹理加工液及具有凹凸的透明导电膜的制造方法
JP4935843B2 (ja) * 2009-03-30 2012-05-23 日立化成工業株式会社 研磨液及び研磨方法
TWI454562B (zh) 2009-07-16 2014-10-01 日立化成股份有限公司 鈀研磨用ｃｍｐ研磨液以及研磨方法
SG176255A1 (en) * 2009-08-19 2012-01-30 Hitachi Chemical Co Ltd Polishing solution for cmp and polishing method
JP2011110637A (ja) * 2009-11-25 2011-06-09 Asahi Glass Co Ltd 磁気ディスク用ガラス基板の製造方法
JP5251861B2 (ja) * 2009-12-28 2013-07-31 信越化学工業株式会社 合成石英ガラス基板の製造方法
JP5587620B2 (ja) * 2010-01-25 2014-09-10 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US9799532B2 (en) 2010-02-15 2017-10-24 Hitachi Chemical Company, Ltd. CMP polishing solution and polishing method
JP5582187B2 (ja) * 2010-03-12 2014-09-03 日立化成株式会社 スラリ、研磨液セット、研磨液及びこれらを用いた基板の研磨方法
JP5141792B2 (ja) 2010-06-29 2013-02-13 日立化成工業株式会社 Ｃｍｐ研磨液及び研磨方法
JP5695367B2 (ja) 2010-08-23 2015-04-01 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP5657318B2 (ja) * 2010-09-27 2015-01-21 富士フイルム株式会社 半導体基板用洗浄剤、これを利用した洗浄方法及び半導体素子の製造方法
KR101886892B1 (ko) 2010-11-22 2018-08-08 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
US9988573B2 (en) 2010-11-22 2018-06-05 Hitachi Chemical Company, Ltd. Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
SG192574A1 (en) 2011-03-11 2013-09-30 Fujifilm Electronic Materials Novel etching composition
EP2502969A1 (en) * 2011-03-22 2012-09-26 Basf Se A chemical mechanical polishing (cmp) composition comprising two types of corrosion inhibitors
CN102952466A (zh) * 2011-08-24 2013-03-06 安集微电子（上海）有限公司 一种化学机械抛光液
TWI577834B (zh) 2011-10-21 2017-04-11 富士軟片電子材料美國股份有限公司 新穎的鈍化組成物及方法
JP6077208B2 (ja) * 2011-11-25 2017-02-08 株式会社フジミインコーポレーテッド 研磨用組成物
JP2013138053A (ja) * 2011-12-28 2013-07-11 Fujimi Inc 研磨用組成物
CN102585706B (zh) * 2012-01-09 2013-11-20 清华大学 酸性化学机械抛光组合物
SG10201606827RA (en) 2012-02-21 2016-10-28 Hitachi Chemical Co Ltd Polishing agent, polishing agent set, and substrate polishing method
JP6044629B2 (ja) 2012-02-21 2016-12-14 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
WO2013157442A1 (ja) * 2012-04-18 2013-10-24 株式会社フジミインコーポレーテッド 研磨用組成物
JP5943073B2 (ja) 2012-05-22 2016-06-29 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
JP5943072B2 (ja) 2012-05-22 2016-06-29 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
US10557059B2 (en) 2012-05-22 2020-02-11 Hitachi Chemical Company, Ltd. Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
JP6273281B2 (ja) 2012-08-24 2018-01-31 エコラブ ユーエスエイ インク サファイア表面を研磨する方法
US8709277B2 (en) 2012-09-10 2014-04-29 Fujifilm Corporation Etching composition
WO2014150884A1 (en) 2013-03-15 2014-09-25 Ecolab Usa Inc. Methods of polishing sapphire surfaces
KR101348515B1 (ko) * 2013-05-22 2014-01-08 동우 화인켐 주식회사 금속배선 형성을 위한 저점도 식각용액
JP2016529700A (ja) * 2013-07-11 2016-09-23 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 腐食防止剤としてベンゾトリアゾール誘導体を含む化学的機械研磨組成物
US9994748B2 (en) 2013-08-09 2018-06-12 Fujimi Incorporated Polishing composition
CN104371551B (zh) * 2013-08-14 2018-01-12 安集微电子（上海）有限公司 一种碱性阻挡层化学机械抛光液
CN104449564A (zh) * 2013-09-23 2015-03-25 中芯国际集成电路制造(上海)有限公司 单分散研磨液及其制备方法、无机氧化物溶胶制备方法
CN103498160B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种抛光浆料
CN103484876B (zh) * 2013-09-23 2016-01-13 无锡阳工机械制造有限公司 一种除锈浆料
CN103526207B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种除锈浆料
CN103498161B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种金属抛光防腐浆料
CN104647197B (zh) * 2013-11-22 2019-01-04 安集微电子（上海）有限公司 一种用于抛光钽的化学机械抛光方法
JP2015203081A (ja) * 2014-04-15 2015-11-16 株式会社フジミインコーポレーテッド 研磨用組成物
JP2017122134A (ja) * 2014-05-22 2017-07-13 日立化成株式会社 金属膜用研磨液及びそれを用いた研磨方法
CN104130715B (zh) * 2014-07-01 2015-09-23 安徽拓普森电池有限责任公司 一种用于半导体集成电路中金属钨的抛光液及其制备方法
CN104592896A (zh) * 2014-12-31 2015-05-06 上海新安纳电子科技有限公司 一种化学机械抛光液
JP2016141765A (ja) * 2015-02-04 2016-08-08 ニッタ・ハース株式会社 研磨用組成物
JP6638208B2 (ja) * 2015-04-02 2020-01-29 日立化成株式会社 研磨剤、研磨剤用貯蔵液及び研磨方法
EP3388195B1 (en) * 2015-12-09 2022-05-04 Konica Minolta, Inc. Method for regenerating abrasive slurry
US10442055B2 (en) * 2016-02-18 2019-10-15 Iowa State University Research Foundation, Inc. Lubricated mechanical polishing
US11339308B2 (en) 2016-03-01 2022-05-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
CN106010297B (zh) * 2016-06-20 2018-07-31 上海新安纳电子科技有限公司 一种氧化铝抛光液的制备方法
US10377014B2 (en) 2017-02-28 2019-08-13 Ecolab Usa Inc. Increased wetting of colloidal silica as a polishing slurry
CN110383426B (zh) * 2017-03-06 2023-05-09 福吉米株式会社 表面处理组合物及其制造方法、以及使用表面处理组合物的表面处理方法及半导体基板的制造方法
CN108690507A (zh) * 2018-07-02 2018-10-23 江西汇诺科技有限公司 高性能磨料抛光液
CN109536042B (zh) * 2018-12-28 2021-06-25 河南联合精密材料股份有限公司 一种油性抛光液及其制备方法与应用
EP3969639B1 (en) * 2019-05-13 2025-03-12 Ecolab Usa Inc. 1,2,4-triazolo[1,5-a] pyrimidine derivative as copper corrosion inhibitor
CN115636592B (zh) * 2021-12-31 2024-05-24 深圳市海风润滑技术有限公司 一种高稳定性蒙砂粉及制备方法
CN114479675B (zh) * 2022-03-08 2023-05-16 昆山捷纳电子材料有限公司 一种用于光纤接头端面的抛光液组合物
CN115112665B (zh) * 2022-06-23 2025-09-09 鹰潭市检验检测认证院(鹰潭市综合检验检测中心、江西省铜及铜产品质量检验检测中心) 一种用于铜及铜合金显微组织的浸蚀剂及快速检验方法

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4944836A (en) * 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
EP0371147B1 (en) 1988-06-03 1993-05-19 Monsanto Japan Limited Abrasive composition for silicon wafer
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
JPH05112775A (ja) 1991-10-22 1993-05-07 Sumitomo Chem Co Ltd 金属材料の研磨用組成物
DE4217366A1 (de) * 1992-05-26 1993-12-02 Bayer Ag Imide und deren Salze sowie deren Verwendung
JP3309442B2 (ja) 1992-10-14 2002-07-29 ソニー株式会社 平坦化絶縁膜の形成方法
US5391258A (en) 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
JPH07183288A (ja) 1993-12-24 1995-07-21 Toshiba Corp 半導体ウェーハ処理剤
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
JP3192968B2 (ja) 1995-06-08 2001-07-30 株式会社東芝 銅系金属用研磨液および半導体装置の製造方法
US6046110A (en) * 1995-06-08 2000-04-04 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing a semiconductor device
JP3015763B2 (ja) 1996-08-30 2000-03-06 三洋電機株式会社 半導体装置の製造方法
JP3503365B2 (ja) 1996-10-25 2004-03-02 旭硝子株式会社 表面処理された基材
JPH1133896A (ja) 1997-05-22 1999-02-09 Nippon Steel Corp 研磨砥粒、研磨剤及び研磨方法
US6022400A (en) * 1997-05-22 2000-02-08 Nippon Steel Corporation Polishing abrasive grains, polishing agent and polishing method
US6001730A (en) * 1997-10-20 1999-12-14 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6432828B2 (en) 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6217416B1 (en) 1998-06-26 2001-04-17 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates
JP2000053946A (ja) 1998-08-05 2000-02-22 Showa Denko Kk 研磨材組成物
JP2000144109A (ja) 1998-11-10 2000-05-26 Okamoto Machine Tool Works Ltd 化学機械研磨用研磨剤スラリ−
CN1803964B (zh) * 1998-12-28 2010-12-15 日立化成工业株式会社 金属研磨液材料、金属研磨液、其制造方法及使用它的研磨方法
JP4171858B2 (ja) 1999-06-23 2008-10-29 Ｊｓｒ株式会社 研磨用組成物および研磨方法
US6582623B1 (en) 1999-07-07 2003-06-24 Cabot Microelectronics Corporation CMP composition containing silane modified abrasive particles
JP4231950B2 (ja) * 1999-10-18 2009-03-04 株式会社トクヤマ 金属膜用研磨剤
US6435944B1 (en) * 1999-10-27 2002-08-20 Applied Materials, Inc. CMP slurry for planarizing metals
WO2001033620A1 (fr) 1999-11-04 2001-05-10 Seimi Chemical Co., Ltd. Compose a polir pour semi-conducteur contenant un peptide
US6720264B2 (en) * 1999-11-04 2004-04-13 Advanced Micro Devices, Inc. Prevention of precipitation defects on copper interconnects during CMP by use of solutions containing organic compounds with silica adsorption and copper corrosion inhibiting properties
JP2001135601A (ja) 1999-11-09 2001-05-18 Speedfam Co Ltd 半導体デバイス平坦化の研磨方法
JP2001144060A (ja) 1999-11-11 2001-05-25 Hitachi Chem Co Ltd 金属積層膜を有する基板の研磨方法
JP3314770B2 (ja) 1999-11-15 2002-08-12 日本電気株式会社 半導体装置及びその製造方法
KR100563166B1 (ko) 1999-12-17 2006-03-27 캐보트 마이크로일렉트로닉스 코포레이션 기판의 연마 또는 평탄화 방법
JP3490038B2 (ja) 1999-12-28 2004-01-26 Ｎｅｃエレクトロニクス株式会社 金属配線形成方法
JP4001219B2 (ja) 2000-10-12 2007-10-31 Ｊｓｒ株式会社 化学機械研磨用水系分散体及び化学機械研磨方法
TW503154B (en) 2000-02-04 2002-09-21 Showa Denko Kk LSI device polishing composition and method for reproducing LSI device
TWI296006B (https=) * 2000-02-09 2008-04-21 Jsr Corp
JP2001244240A (ja) * 2000-02-25 2001-09-07 Speedfam Co Ltd 半導体ウエハの製造方法
JP3624809B2 (ja) 2000-02-29 2005-03-02 昭和電工株式会社 洗浄剤組成物、洗浄方法及びその用途
JP2001269860A (ja) 2000-03-27 2001-10-02 Shibaura Mechatronics Corp 銅系金属研磨用スラリーおよび銅系金属膜の研磨方法
JP2001269859A (ja) 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
US6623355B2 (en) * 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US6555510B2 (en) * 2001-05-10 2003-04-29 3M Innovative Properties Company Bis(perfluoroalkanesulfonyl)imides and their salts as surfactants/additives for applications having extreme environments and methods therefor
US6656241B1 (en) 2001-06-14 2003-12-02 Ppg Industries Ohio, Inc. Silica-based slurry
SG115405A1 (en) * 2001-09-17 2005-10-28 Inst Of Microelectronics Method for reducing dishing in chemical mechanical polishing
WO2003036705A1 (en) * 2001-10-26 2003-05-01 Asahi Glass Company, Limited Polishing compound, method for production thereof and polishing method
US20050050803A1 (en) * 2001-10-31 2005-03-10 Jin Amanokura Polishing fluid and polishing method
US6746498B1 (en) * 2002-12-12 2004-06-08 Intel Corporation Abrasive with a modified surface and a method for making it

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8501625B2 (en) 2007-07-10 2013-08-06 Hitachi Chemical Co., Ltd. Polishing liquid for metal film and polishing method
TWI471365B (zh) * 2007-07-10 2015-02-01 日立化成股份有限公司 金屬膜用硏磨液以及硏磨方法
TWI471364B (zh) * 2007-07-10 2015-02-01 日立化成股份有限公司 金屬用研磨液以及研磨方法
US9564337B2 (en) 2010-12-24 2017-02-07 Hitachi Chemical Co., Ltd. Polishing liquid and method for polishing substrate using the polishing liquid
TWI601808B (zh) * 2016-03-01 2017-10-11 羅門哈斯電子材料Ｃｍｐ控股公司 化學機械研磨方法

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