US20060128065A1 - Adhesive sheet, dicing tape intergrated type adhesive sheet, and semiconductor device producing method - Google Patents

Adhesive sheet, dicing tape intergrated type adhesive sheet, and semiconductor device producing method Download PDF

Info

Publication number
US20060128065A1
US20060128065A1 US10/559,684 US55968405A US2006128065A1 US 20060128065 A1 US20060128065 A1 US 20060128065A1 US 55968405 A US55968405 A US 55968405A US 2006128065 A1 US2006128065 A1 US 2006128065A1
Authority
US
United States
Prior art keywords
adhesive sheet
semiconductor
adhesive
dicing tape
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/559,684
Other languages
English (en)
Inventor
Teiichi Inada
Michio Mashino
Michio Uruno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Assigned to HITACHI CHEMICAL CO., LTD. reassignment HITACHI CHEMICAL CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: INADA, TEIICHI, MASHINO, MICHIO, URUNO, MICHIO
Publication of US20060128065A1 publication Critical patent/US20060128065A1/en
Priority to US12/047,200 priority Critical patent/US20080171187A1/en
Priority to US12/219,187 priority patent/US7968194B2/en
Priority to US12/219,188 priority patent/US7875500B2/en
Priority to US12/219,189 priority patent/US7968195B2/en
Priority to US13/658,985 priority patent/US8617930B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83856—Pre-cured adhesive, i.e. B-stage adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01011—Sodium [Na]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01045—Rhodium [Rh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0106—Neodymium [Nd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01077—Iridium [Ir]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/266—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension of base or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2848—Three or more layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31511—Of epoxy ether
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
    • Y10T428/31573—Next to addition polymer of ethylenically unsaturated monomer
    • Y10T428/31587—Hydrocarbon polymer [polyethylene, polybutadiene, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31721—Of polyimide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31725—Of polyamide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31725—Of polyamide
    • Y10T428/31736—Next to polyester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31725—Of polyamide
    • Y10T428/3175—Next to addition polymer from unsaturated monomer[s]
    • Y10T428/31757—Polymer of monoethylenically unsaturated hydrocarbon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31786—Of polyester [e.g., alkyd, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31786—Of polyester [e.g., alkyd, etc.]
    • Y10T428/31797—Next to addition polymer from unsaturated monomers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31826—Of natural rubber
    • Y10T428/3183—Next to second layer of natural rubber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y10T428/31909—Next to second addition polymer from unsaturated monomers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y10T428/31909—Next to second addition polymer from unsaturated monomers
    • Y10T428/31913—Monoolefin polymer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y10T428/31909—Next to second addition polymer from unsaturated monomers
    • Y10T428/31913—Monoolefin polymer
    • Y10T428/3192—Next to vinyl or vinylidene chloride polymer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y10T428/31909—Next to second addition polymer from unsaturated monomers
    • Y10T428/31928—Ester, halide or nitrile of addition polymer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y10T428/31938—Polymer of monoethylenically unsaturated hydrocarbon

Definitions

  • the present invention relates to an adhesive sheet suitable for the joint of a semiconductor element with a semiconductor-element-mounting support member, a dicing tape integrated type adhesive sheet, and a method of producing a semiconductor device using them.
  • silver paste has been mainly used to joint a semiconductor element with a semiconductor-element-mounting support member.
  • the support member used has also been required to be made small-sized and minute as semiconductors have been made small-sized and the performance thereof has been made high in recent years.
  • Silver paste has come not to meet such requirements by generating of the problem at the time of wire bonding resulting from the paste smudge and the inclination of semiconductor elements, control difficulty of the film thickness of an adhesive sheet, generating of voids in the adhesive sheet, and others. In recent years, therefore, a sheet-form adhesive has come to be used in order to meet the requirements.
  • This adhesive sheet is used in an individual-piece sticking mode or a wafer-back-face sticking mode.
  • the semiconductor device is obtained by cutting or punching out a reel-form adhesive sheet into individual pieces, bonding one out of the individual pieces onto a support member, jointing a semiconductor element made, through a dicing step, into an individual piece onto the adhesive-sheet-bonded support member to form a semiconductor-element-jointed support member, and, if necessary, causing this member to undergo a wire bonding step, a sealing step and other steps.
  • the adhesive sheet in the wafer-back-face sticking mode is used to produce a semiconductor device
  • the semiconductor device is obtained by sticking the adhesive sheet onto the back face of a semiconductor wafer, sticking a dicing tape onto the other face of the adhesive sheet, dicing the wafer into individual semiconductor elements, picking up one of the individual adhesive-sheet-bonded semiconductor elements, jointing it with a support member, and causing the resultant to undergo the steps of heating, curing, wire bonding and others.
  • This adhesive sheet in the wafer-back-face sticking mode does not require any device for making an adhesive sheet into individual pieces since a semiconductor element with the adhesive sheet is jointed with a support member.
  • a conventional fabricating device for silver paste can be used as it is, or the device can be used in the state that a part thereof is improved by, for example, the addition of a hot plate thereto. For this reason, attention is paid to the production method, as a method capable of making costs for the production relatively inexpensive, among fabricating methods using an adhesive sheet.
  • a wafer-cutting method a method of performing the step of making a wafer into a state that the wafer can easily be cut, such as the step of making trenches which will be cutting stripes in a wafer without being completely cut or the step of forming a modified regions by radiating a laser into a wafer along lines intended to be cut; and subsequently cutting the wafer by, for example, the application of external force thereto.
  • the former is called half cut dicing
  • the latter is called stealth dicing (for example, Japanese Patent Application Laid-Open Nos. 2002-192370 and 2003-338467).
  • An object of the present invention is to provide an adhesive sheet which can be stuck onto a wafer at low temperatures, is so flexible that the sheet can be handled at room temperature, and can be cut at the same time as the wafer is cut under ordinary cutting conditions.
  • the inventors have found out that when the breaking strength and the breaking elongation of an adhesive sheet in a B-stage state at 25° C. are restricted into specific numerical ranges, it is possible to obtain an adhesive sheet which can be cut at the same time as a wafer is cut at room temperature.
  • the frequency dependency is a phenomenon that a sample has an elastic modulus variable in accordance with the frequency of a strain applied to the sample in the measurement of the dynamic viscoelasticity.
  • the present invention has, as it features, matters described in the following ⁇ 1> to ⁇ 15>:
  • An adhesive sheet comprising a polymer component, the breaking strength of the adhesive sheet in a B-stage state being from 0.1 to 10 MPa at 25° C., and the breaking elongation thereof being from 1 to 40% at 25° C.
  • An adhesive sheet comprising a polymer component, the elastic modulus of the adhesive sheet in a B-stage state being from 1 to 3000 MPa in measurement of the dynamic viscoelasticity at 25° C. and 10 Hz, and the elastic modulus thereof being from 4000 to 20000 MPa in measurement of the dynamic viscoelasticity at 25° C. and 900 Hz.
  • An adhesive sheet comprising a polymer component, the elastic modulus of the adhesive sheet in a B-stage state being from 1 to 3000 MPa in measurement of the dynamic viscoelasticity at 25° C. and 10 Hz, and the elastic modulus thereof being from 4000 to 20000 MPa in measurement of the dynamic viscoelasticity at ⁇ 20° C. and 10 Hz.
  • ⁇ 6> The adhesive sheet according to any one of the above-mentioned ⁇ 1> to ⁇ 5>, wherein the polymer component has a glass transition temperature of ⁇ 30 to 50° C., and a weight-average molecular weight of 50000 to 1000000.
  • thermosetting component The adhesive sheet according to the above-mentioned ⁇ 7>, further comprising a thermosetting component.
  • ⁇ 12> A dicing tape integrated type adhesive sheet formed by lamination of the adhesive sheet according to any one of the above-mentioned ⁇ 1> to ⁇ 11> and a dicing tape.
  • a method of producing a semiconductor device comprising: I) the step of sticking the adhesive sheet according to any one of the above-mentioned ⁇ 1> to ⁇ 11> onto a semiconductor wafer, II) the step of rendering the semiconductor wafer permissible to be cut, III) the step of sticking a dicing tape onto the adhesive sheet in order of I-II-III, II-I-III, or I-III-II, and further comprising: IV) the step of cutting the semiconductor wafer and the adhesive sheet, thereby yielding adhesive-sheet-stuck semiconductor chips which are individual pieces, and V) the step of bonding the adhesive-sheet-stuck semiconductor chips onto a semiconductor-chip-mounting support member.
  • a method of producing a semiconductor device comprising: I′) the step of sticking the dicing tape integrated type adhesive sheet according to the above-mentioned ⁇ 12> onto a semiconductor wafer, and II) the step of rendering the semiconductor wafer permissible to be cut in order of I′-II or II-I′, and further comprising: IV) the step of cutting the semiconductor wafer and the adhesive sheet of the dicing tape integrated type adhesive sheet, thereby yielding adhesive-sheet-stuck semiconductor chips which are individual pieces, and V) the step of bonding the adhesive-sheet-stuck semiconductor chips onto a semiconductor-chip-mounting support member.
  • ⁇ 15> The method of producing a semiconductor device according to the above-mentioned ⁇ 13> or ⁇ 14>, wherein a method for rendering the semiconductor wafer permissible to be cut is half cut dicing or stealth dicing.
  • FIG. 1 is a schematic view illustrating an embodiment of the step I) in the invention.
  • FIG. 2 is a schematic view illustrating an embodiment of the step II) in the invention.
  • FIG. 3 is a schematic view illustrating an embodiment of the step III) in the invention.
  • FIG. 4 is a schematic view illustrating an embodiment of the step IV) in the invention.
  • FIG. 5 is a schematic view illustrating an embodiment of the step V) in the invention.
  • FIG. 6 is a schematic view illustrating an embodiment of the step I′) in the invention.
  • FIG. 7 is a schematic view illustrating an embodiment of the step II) in the invention.
  • FIG. 8 is a schematic view illustrating a state that external force is applied to a wafer in FIG. 7 , whereby the wafer and an adhesive sheet are cut.
  • FIG. 9 is a schematic view illustrating an embodiment of the step V) in the invention.
  • FIG. 10 is a schematic view illustrating an embodiment of an adhesive-sheet-stuck semiconductor chip.
  • FIG. 11 is a schematic view illustrating an embodiment of the steps I′), II) and IV) in the invention.
  • the adhesive sheet of the present invention comprises a polymer component, and has the breaking strength in a B-stage state from 0.1 to 10 MPa at 25° C., and the breaking elongation from 1 to 40% at 25° C.
  • breaking strength is less than 0.1 MPa, the adhesive sheet is brittle and the handleability thereof deteriorates. If the breaking strength is more than 10 MPa, the adhesive sheet cannot be cut at the same time as a wafer is cut, which being inappropriate. Similarly, if the breaking elongation is less than 1%, the adhesive sheet is brittle and the handleability thereof deteriorates. If the breaking elongation is more than 40%, the adhesive sheet cannot be cut at the same time as a wafer is cut, which being inappropriate.
  • the breaking strength and the breaking elongation are preferably from 1 to 8 MPa and from 5 to 35%, respectively, and are more preferably from 3 to 7 MPa and from 10 to 30%, respectively, since the adhesive sheet can be surely broken when the wafer is broken and further the adhesive sheet has a sufficient strength and an excellent handleability.
  • the breaking strength In order to raise the breaking strength, it is effective to make the elastic modulus high and further make the toughness of the material large. Specifically, it is effective to make the elastic modulus high by the addition of various filler additives, and add a small amount of rubber or the like in order to improve the toughness of the material. In order to decrease the breaking strength, it is effective to increase the adding amount of an oligomer and a monomer to decrease the breaking elongation of the film.
  • the breaking elongation In order to raise the breaking elongation, it is effective to improve the flexibility and the toughness of the material. For example, it is effective to increase the amount of a polymer component having a low Tg and a large molecular weight and the adding amount of an oligomer and a monomer which each have a softening temperature lower than 30° C. In order to decrease the breaking elongation, it is effective to increase the adding amount of an oligomer and a monomer which each have a softening temperature of 30° C. or higher and the amount of a polymer component having a high Tg, and add a filler to lower the toughness.
  • the adhesive sheet of the present invention comprises a polymer component, and has the elastic modulus in a B-stage state from 1 to 3000 MPa in measurement of the dynamic viscoelasticity at 25° C. and 10 Hz, and the elastic modulus from 4000 to 20000 MPa in measurement of the dynamic viscoelasticity at 25° C. and 900 Hz.
  • the elastic modulus at 25° C. and 10 Hz is preferably from 10 to 1500 MPa, more preferably from 100 to 1200 MPa since the adhesive sheet is not easily cracked when it is handled. If the elastic modulus is less than 1 MPa, the elongation of the adhesive sheet is large so that it is not easily handled. If the elastic modulus is more than 3000 MPa, the adhesive sheet is cracked when it is handled, which are not preferable.
  • the elastic modulus at 25° C. and 900 Hz is preferably from 5000 to 15000 MPa. If the elastic modulus is less than 4000 MPa, the adhesive sheet tends not to be easily cut. If the elastic modulus is more than 20000 MPa, the adhesive sheet tends to be easily cracked when it is handled.
  • the adhesive sheet of the present invention comprises a polymer component, and has the elastic modulus in a B-stage state from 1 to 3000 MPa in measurement of the dynamic viscoelasticity at 25° C. and 10 Hz, and the elastic modulus from 4000 to 20000 MPa in measurement of the dynamic viscoelasticity at ⁇ 20° C. and 10 Hz.
  • the elastic modulus at ⁇ 20° C. and 10 Hz is preferably from 5000 to 15000 MPa. If the elastic modulus is less than 4000, the adhesive sheet tends not to be easily cut. If it is more than 20000 MPa, the adhesive sheet tends to be easily cracked when it is handled.
  • the various physical properties are within the above-specified ranges when the adhesive sheet is cut after the sheet is stuck onto a wafer.
  • the physical properties may not be within the ranges.
  • it is sufficient that the various physical properties are within the above-mentioned ranges after a given storage period from the time when the adhesive sheet is stuck onto a wafer or after the adhesive sheet undergoes working of thermal treatment or radial ray radiation such as optical curing.
  • the adhesive sheet can be stuck onto the semiconductor wafer at a low temperature.
  • the breakability can be improved by setting the breaking strength and the breaking elongation within the above-mentioned ranges after the adhesive sheet is stuck. Similarly, even if the elastic modulus of an adhesive sheet at 25° C. and 10 Hz is less than 1 MPa at an initial stage, the adhesive sheet has intense adhesive property and can easily be laminated at room temperature when the adhesive sheet is stuck onto a wafer. Thereafter, the elastic modulus is set into the above-mentioned range, whereby the breakability can be improved.
  • the elastic modulus of the adhesive sheet in a B-stage state is preferably from 0.1 to 20 MPa, more preferably from 0.1 to 10 MPa, and in particular preferably from 0.1 to 5 MPa in measurement of the dynamic viscoelasticity at 60° C. and 10 Hz. If the elastic modulus is less than 0.1 MPa, the sheet may be peeled or shifted from a wafer after the sheet is stuck thereto, which is not preferred.
  • the adhesive sheet of the present invention preferably has the above-mentioned various properties as well as heat resistance and humidity resistance required when a semiconductor element is mounted onto a semiconductor-element-mounting support member. Especial limitation is not imposed on the adhesive sheet of the present invention if the adhesive sheet satisfies the above-mentioned properties. It is preferred that the adhesive sheet contains a thermosetting component and a filler besides the polymer component since the adhesive sheet has an appropriate tacking strength and a good handleability in a sheet form.
  • the adhesive sheet may contain, additionally, a curing accelerator, a catalyst, an additive, a coupling agent, and so on.
  • the breaking strength and the breaking elongation tend to become higher as the amount of the polymer component contained in the adhesive sheet is larger and the amount of the filler is smaller; it is therefore important to adjust these components such that the breaking strength and the breaking elongation are set within the numerical ranges specified in the present invention.
  • the polymer component in the present invention is not particularly limited as long as the component causes the properties of the adhesive sheet to be satisfied.
  • the glass transition temperature (abbreviated to Tg hereinafter) thereof is from ⁇ 30 to 50° C. and the weight-average molecular weight is from 50000 to 1000000. If the Tg is higher than 50° C., the flexibility of the sheet is inconveniently low. If the Tg is lower than ⁇ 30° C., the flexibility of the sheet is too high. Thus, it is not convenient since the sheet is not easily broken when the wafer thereon is broken. If the weight-average molecular weight is less than 50000, the heat resistance of the sheet lowers inconveniently. If the molecular weight is more than 1000000, the fluidity of the sheet lowers inconveniently.
  • the Tg and the weight-average molecular weight are more preferably from ⁇ 20 to 40° C. and from 100000 to 900000, respectively, preferably from ⁇ 10 to 50° C. and from 50000 to 1000000, respectively, and in particular preferably from ⁇ 10 to 30° C. and from 500000 to 900000, respectively.
  • the weight-average molecular weight is a value in terms of polystyrene on the basis of gel permeation chromatography (GPC) using a calibration curve of standard polystyrene, and was measured by using an L-6000 (trade name) manufactured by Hitachi Ltd.
  • a column wherein a Gelpack GL-R440, a Gelpack GL-R450 and a Gelpack GL-R400M (each 10.7 mm diameter ⁇ 300 mm) manufactured by Hitachi Chemical Co., Ltd. are connected in this order as a column, and tetrahydrofuran as an eluent, and measuring a sample wherein 120 mg of a specimen was dissolved in 5 mL of THF at a flow rate of 1.75 mL/minute.
  • the polymer component examples include polyimide, polystyrene, polyethylene, polyester, polyamide, butadiene rubber, acrylic rubber, (meth)acrylic resin, urethane resin, polyphenylene ether resin, polyetherimide resin, phenoxy resin, modified polyphenylene ether resin, phenoxy resin, polycarbonate, and mixtures thereof.
  • a polymer component containing a functional monomer and having a weight-average molecular weight of 100000 or more for example, an epoxy group-containing (meth)acrylic copolymer containing a functional monomer, such as glycidyl acrylate or glycidyl methacrylate, and further having a weight-average molecular weight of 100000.
  • epoxy group-containing (meth) acrylic copolymer for example, (meth) acrylic ester copolymer, acrylic rubber or the like can be used.
  • Acrylic rubber is more preferred.
  • Acrylic rubber is a rubber which contains an acrylic acid ester as a main component and is made mainly of a copolymer made of butyl acrylate, acrylonitrile and others, or a copolymer made of ethyl acrylate, acrylonitrile and others.
  • the polymer component is contained preferably in an amount of 50% or less of the total weight of the adhesive sheet from which the weight of the filler is removed, more preferably in an amount of 35% or less, and in particular preferably in an amount from 25 to 35%. If the blend amount of the polymer component is large, the breakability of the adhesive sheet tends to deteriorate. If the blend amount is small, the fluidity is too large when the sheet is bonded so that voids tend to be generated.
  • thermosetting component examples include epoxy resin, cyanate resin, phenol resin, and cured products thereof.
  • Epoxy resin is preferred since the resin has a high heat resistance.
  • the epoxy resin is not particularly limited as long as the resin has adhesive effect when it is cured.
  • the following can be used: a bifunctional epoxy resin such as bisphenol A type epoxy; a novolak epoxy resin such as phenol novolak epoxy resin or cresol novolak epoxy resin; or the like.
  • an ordinarily-known epoxy resin can be used, examples of which include polyfunctional epoxy resin, glycidylamine epoxy resin, heteroring-containing epoxy resin, or alicyclic epoxy resin.
  • a filler preferably an inorganic filler
  • a filler preferably an inorganic filler
  • inorganic filler it is preferred to incorporate a filler, preferably an inorganic filler into the adhesive sheet of the invention in order to decrease the breaking strength and the breaking elongation of the adhesive sheet in a B-stage state, improve the handleability and thermal conductivity of the adhesive, adjust the melting viscosity, and give thixotropy.
  • the inorganic filler examples include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, amorphous silica, and antimony oxide.
  • aluminum hydroxide magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica, amorphous silica, and so on.
  • alumina silica, aluminum hydroxide, and antimony oxide.
  • the amount of the filler is preferably from 5 to 70% by weight of the total of the adhesive sheet, more preferably from 35 to 60% by weight. If the blend amount thereof is large, there are easily caused problems, such as a rise in the storage elastic modulus of the adhesive sheet, a fall in the adhesive property thereof, and a deterioration in the electrical properties due to remaining voids. Thus, the amount is in particular preferably set to 50% or less by weight.
  • the specific gravity of the filler is preferably from 1 to 10 g/cm 3 .
  • the adhesive sheet of the invention may contain an acrylic monomer having in the molecule thereof one or more unsaturated double bonds and a photoinitiator therefor, thereby having UV curability.
  • an acrylic monomer having in the molecule thereof one or more unsaturated double bonds and a photoinitiator therefor, thereby having UV curability.
  • the adhesive sheet of the invention can be obtained by mixing and kneading the above-mentioned polymer component and the optional thermosetting component, filler and other components in an organic solvent to prepare a varnish, forming a layer of the varnish on a substrate film, heating and drying the layer, and then removing the substrate.
  • the above-mentioned mixing and kneading can be performed by means of an appropriate combination of two or more ordinary dispersers such as a stirrer, a crusher, a three-axis roll, and a ball mill.
  • Conditions for the above-mentioned heating and drying are not particularly limited as long as the conditions are conditions for volatilizing the used solvent sufficiently.
  • the vanish layer is heated at 60 to 200° C. for 0.1 to 90 minutes.
  • the organic solvent used in the preparation of the varnish in the production of the adhesive sheet is not particularly limited as long as the solvent is an organic solvent which makes it possible to dissolve, knead and disperse the materials evenly, and the solvent may be one which is known in the art.
  • a solvent include dimethylformamide, dimethylacetoamide, N-methylpyrrolidone, ketone solvents such as acetone, methyl ethyl ketone and cyclohexanone, toluene, and xylene.
  • Methyl ethyl ketone, cyclohexanone or the like is preferably used since it has a high drying rate and it is inexpensive.
  • the amount of the used organic solvent is not particularly limited as long as the remaining volatile matter content is from 0.01 to 3% by weight of the whole after the adhesive sheet is produced. From the viewpoint of heat-resistant reliability, the content is preferably from 0.01 to 2.0% by weight, more preferably from 0.01 to 1.5% by weight of the whole.
  • Plural bodies of any adhesive sheet of the invention may be stacked onto each other to produce a multi-layered adhesive sheet as long as they can be cut.
  • a multi-layered adhesive sheet may be produced by combining any adhesive sheet of the present invention with a film made of a thermoplastic film, an adhesive, a thermosetting resin and so on and laminating two bodies of the adhesive sheet on both faces of the film.
  • the wording “as long as they can be cut” means that the breaking strength and the breaking elongation of the multi-layered sheet are within the above-mentioned numerical ranges.
  • a film is, for example, a film made of a thermoplastic resin such as polyimide or polyester, an epoxy resin, a silicon resin, or a mixture thereof.
  • the film may contain various fillers.
  • the film thickness of any adhesive sheet of the invention is not particularly limited, and is preferably from 1 to 250 ⁇ m. If the thickness is smaller than 1 ⁇ m, the stress-relaxing effect and the adhesive property thereof tend to become poor. If the thickness is larger than 250 ⁇ m, economical disadvantages are generated. Furthermore, a requirement of making a semiconductor device small-sized is not met and the adhesive sheet tends not to be easily broken.
  • the thickness is preferably from 3 to 100 ⁇ m, more preferably from 5 to 55 ⁇ m since a high adhesive property is given and a semiconductor device can be made small-sized.
  • the dicing tape integrated type adhesive sheet of the present invention can be obtained by laminating any adhesive sheet of the present invention on a known dicing tape.
  • This dicing tape integrated type adhesive sheet is used, only a single step of lamination onto a wafer is required and the work can be made effective.
  • the method for laminating the adhesive sheet onto the dicing tape may be, for example, a method of pressing or hot-roll-laminating the adhesive sheet formed in advance onto the dicing tape besides printing. Preferred is the hot-roll-laminating method since the dicing tape integrated type adhesive sheet can be continuously produced and the efficiency of the method is good.
  • the dicing tape used in the invention examples include a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, a polyimide film, and other plastic films.
  • the dicing tape may be subjected to a surface treatment such as primer painting, UV treatment, corona discharge treatment, polishing treatment, or etching treatment.
  • the dicing tape needs to have adhesiveness.
  • An adhesive layer may be formed on a single face of the dicing tape. This can be formed by painting and drying a resin composition, for the adhesive layer, having an appropriate tacking strength obtained by adjusting, in particular, the ratio between liquid components therein, or the Tg of the polymer component therein.
  • the film thickness of the dicing tape is not particularly limited, and is appropriately decided on the basis of knowledge of those skilled in the art in accordance with the film thickness of the adhesive sheet or the usage of the dicing tape integrated type adhesive sheet.
  • the film thickness is from 60 to 150 ⁇ m, preferably from 70 to 130 ⁇ m since economical advantages are given and the handleability of the film is good.
  • any adhesive sheet of the present invention or the adhesive sheet of the dicing tape integrated type adhesive sheet of the invention has such an adhesive force that semiconductor elements are not scattered at the time of dicing in the production of a semiconductor device and can be peeled from the dicing tape at the time of picking-up subsequent thereto.
  • the adhesiveness of the adhesive sheet or the dicing tape is too high, the resin in terminal regions of the trenches melts so that the separation thereof becomes difficult. Therefore, the 90° peel strength between the adhesive sheet of the invention and a dicing tape thereon in a B-stage state is preferably 150 N/m or less, more preferably from 5 to 100 N/m, and even more preferably from 5 to 50 N/m.
  • the peel strength is more than 150 N/m, chips tend to be easily cracked at the time of the picking-up.
  • the peel strength is a result obtained when the adhesive sheet is peeled from the dicing tape at an angle of 90° and a tensile speed of 50 mm/minute in an atmosphere of 25° C. temperature.
  • the adhesive sheet In order to set the 90° peel strength to 150 N/m or less, it is desired to adjust the tacking strength of the adhesive sheet appropriately. It is advisable to perform the method for adjusting the tacking strength by use of a nature that: when the fluidity of the adhesive sheet is raised at room temperature, the adhesive force and the tacking strength tend to rise; and when the fluidity is lowered, the adhesive force and the tacking strength tend to fall.
  • a nature that: when the fluidity of the adhesive sheet is raised at room temperature, the adhesive force and the tacking strength tend to rise; and when the fluidity is lowered, the adhesive force and the tacking strength tend to fall.
  • the plasticizer include a monofunctional acrylic monomer, a monofunctional epoxy resin, a liquid epoxy resin, an acrylic resin, and what is called a diluting agent of an epoxy type.
  • a semiconductor device can be produced by use of any adhesive sheet of the present invention or a dicing tape integrated type adhesive sheet having any adhesive sheet of the invention.
  • a method of producing the semiconductor of the invention comprises: I) the step of sticking any adhesive sheet of the invention onto a semiconductor wafer, II) the step of rendering the semiconductor wafer permissible to be cut, III) the step of sticking a dicing tape onto the adhesive sheet of the invention in order of I-II-III, II-I-III, or I-III-II, and further comprises: IV) the step of cutting the semiconductor wafer and the adhesive sheet, thereby yielding adhesive-sheet-stuck semiconductor chips which are individual pieces, and V) the step of bonding the adhesive-sheet-stuck semiconductor chips onto a semiconductor-chip-mounting support member.
  • FIG. 1 illustrates an embodiment of the step of sticking an adhesive sheet 1 of the present invention onto a semiconductor wafer A
  • FIG. 2 illustrates that of the step of radiating a laser ray onto lines along which the semiconductor wafer A is to be cut, thereby forming modified regions (cutting-intended regions) 5 inside the wafer to render the wafer permissible to be cut
  • FIG. 3 illustrates that of the step of sticking a dicing tape 2 composed of an adhesive layer 2 a and a substrate layer 2 b onto the adhesive sheet 1
  • FIG. 4 illustrates that of the step of expanding the dicing tape 2 , thereby cutting the semiconductor wafer A and the adhesive sheet 1
  • FIG. 5 illustrates that of the step of bonding an adhesive-sheet-stuck semiconductor chip 6 onto a semiconductor-chip-mounting support member 7 .
  • the semiconductor wafer is made of one or more selected from polycrystal silicon, various ceramics, and compound semiconductors, such as gallium arsenic, besides monocrystal silicon.
  • the temperature at which the adhesive sheet is stuck onto the wafer in the step I), that is, the laminating temperature is preferably from 0 to 170° C. In order to make a warp of the wafer small, the temperature is more preferably from 20 to 130° C., in particular preferably from 20 to 60° C.
  • the step I) is performed after the step II), it is preferred to perform the lamination while the wafer is supported not to be deformed in order to prevent the wafer from being broken by stress or deformation in the laminating step.
  • the working method for rendering the wafer permissible to be cut in the step II) may be a method of rendering the wafer which will be able to be easily cut by subsequent application of external force thereto.
  • a method of making trenches which will be cutting stripes without cutting the wafer completely into chips with a dicing cutter or the like or a method of radiating a laser ray into a wafer along lines intended to be cut, thereby forming modified regions, etc. can be mentioned.
  • a method of making trenches which will be cutting stripes without cutting the wafer completely into chips with a dicing cutter or the like or a method of radiating a laser ray into a wafer along lines intended to be cut, thereby forming modified regions, etc. can be mentioned.
  • about the laser processing of the wafer methods described in Japanese Patent Application Laid-Open Nos. 2002-192370 and 2003-338467 can be used.
  • a MAHOHDICING MACHINE manufactured by Tokyo Seimitsu Co., Ltd. can be used.
  • the laser ray into the semiconductor wafer may be radiated through the front face of the semiconductor wafer, that is, the face on which a circuit is formed, or may be radiated through the rear face of the semiconductor wafer, that is, the face on which no circuit is formed and the adhesive sheet is stuck.
  • the step II) is performed after the step I), the step I′) which will be described later, or the step III, it is preferred to use, as the adhesive sheet or the dicing tape, a sheet or a tape which transmits the laser ray since the laser ray thereby can be radiated into the semiconductor wafer from the side of the adhesive sheet or the dicing tape.
  • the adhesive sheet has a different transparency or color tone from that of the dicing tape since its portion that has been unable to be broken, that is, be cut is easily recognized.
  • the above-mentioned laser processing machine is used to focus a ray on an inner portion of the silicon wafer, and the laser ray is radiated thereto from the side of the front face of the silicon wafer along its lines intended to be cut, under conditions described below.
  • modified regions are formed inside the silicon wafer. Wafers can be cut according to the modified regions along the lines intended to be cut.
  • the modified regions are preferably melting-treated regions formed by heating and melting the inner regions of the semiconductor wafer locally by multi-photons absorption.
  • the dicing tape is stuck onto the face opposite to the face of the semiconductor wafer onto which the adhesive sheet is stuck by a method known in the prior art.
  • the temperature for the sticking that is, the laminating temperature is preferably from 0 to 60° C., more preferably from 10 to 40° C., and even more preferably from 15 to 30° C.
  • the semiconductor producing method of the present invention may comprise, as the step I′) instead of the steps I) and III), the step of sticking a dicing tape integrated type adhesive sheet of the invention onto the semiconductor wafer.
  • the method of producing a semiconductor device of the present invention comprises I′) the step of sticking a dicing tape integrated type adhesive sheet of the invention onto a semiconductor wafer, and II) the step of rendering the semiconductor wafer permissible to be cut in order of I′-II or II-I′, and further comprises: IV) the step of cutting the semiconductor wafer and the adhesive sheet of the dicing tape integrated type adhesive sheet of the invention, thereby yielding adhesive-sheet-stuck semiconductor chips which are individual pieces, and V) the step of bonding the adhesive-sheet-stuck semiconductor chips onto a semiconductor-chip-mounting support member.
  • FIG. 6 illustrates one embodiment of the step of sticking a dicing tape integrated type adhesive sheet 3 of the present invention onto a semiconductor wafer A;
  • FIG. 7 illustrates that of the step of half-cutting the semiconductor wafer A with a dicing saw to render the wafer A permissible to be cut;
  • FIG. 8 illustrates that of the state that external force is applied to the dicing tape integrated type adhesive sheet 3 , whereby the wafer A and the adhesive sheet 1 of the dicing tape integrated type adhesive sheet 3 are cut;
  • FIG. 9 illustrates that of the step of bonding an adhesive-sheet-stuck semiconductor chip 6 onto a semiconductor-chip-mounting support member 7 .
  • the step of sticking the dicing tape integrated type adhesive sheet 3 of the invention onto the semiconductor wafer A the step of radiating a laser ray onto lines intended to be cut in the semiconductor wafer A so as to form modified regions (cutting-intended regions) 5 inside the wafer 5 , thereby rendering the wafer permissible to be cut, and the step of applying external force to the dicing tape 2 or the dicing tape integrated type adhesive sheet 3 , thereby cutting the semiconductor wafer A and the adhesive sheet 1 .
  • the combination of the method for sticking the adhesive sheet and the dicing tape onto the wafer with the dicing method is not particularly limited. From the viewpoint of workability and efficiency, a combination of the sticking of the dicing tape integrated type adhesive sheet of the invention onto the wafer with stealth dicing is most preferred.
  • the temperature for the sticking is preferably from 0 to 170° C. In order to make a warp of the wafer small, the temperature is more preferably from 20 to 130° C., in particular preferably from 20 to 60° C.
  • the step IV) is performed; in this step, the cutting of the semiconductor wafer and the adhesive sheet can be attained by applying external force to the dicing tape or the dicing tape integrated type adhesive sheet.
  • this external force is preferably applied thereto in a bending direction or twisting direction.
  • the force is preferably applied thereto in an expanding direction.
  • the cutting can be attained with a commercially available wafer expanding device. More specifically, as illustrated in FIG. 4 , a ring 11 is stuck and fixed onto the periphery of the dicing tape 2 arranged on a stage 13 , and next a pushing-up section 12 is raised to apply tensile force the dicing tape 2 from its both ends.
  • the speed of raising the pushing-up section at this time is defined as the expand speed and the height 14 of the elevation of the pushing-up section is defined as the expand amount.
  • the expand speed is preferably from 10 to 1000 mm/second, more preferably from 10 to 100 mm/second, and in particular preferably from 10 to 50 mm/second in the invention.
  • the expand amount is preferably from 5 to 30 mm, more preferably from 10 to 30 mm, and in particular preferably from 15 to 20 mm. If the expand speed is less than 10 mm/second, the semiconductor wafer and the adhesive sheet tend not to be easily cut. If the speed is more than 1000 mm/second, the dicing tape tends to be easily broken. If the expand amount is less than 5 mm, the semiconductor wafer and the adhesive sheet tend not to be easily cut. If the amount is more than 30 mm, the dicing tape tends to be easily broken.
  • the semiconductor wafer When the dicing tape is expanded in this way so as to apply external force, the semiconductor wafer is cracked in the thickness direction thereof from the modified regions, inside the wafer, as starting points. This crack reaches the front and rear faces of the wafer and the rear face of the adhesive sheet adhering closely to the semiconductor wafer. Thus, the semiconductor wafer and the adhesive sheet are broken, that is, are cut. In this way, adhesive-sheet-stuck semiconductor chips can be obtained.
  • the expand amount is more than 25 mm, it is preferred to use a vinyl chloride base material for the substrate layer of the dicing tape. If the amount of the expand is small, it is preferred to use various polyolefin base materials.
  • the expand is performed at room temperature. As the need arises, the temperature for the expand may be adjusted in the range of ⁇ 50 to 100° C. In the invention, the temperature is preferably from ⁇ 50 to 60° C., more preferably form 0 to 40° C. As the temperature at the time of the expand is lower, the breaking elongation of the adhesive sheet is smaller so as to be more easily be cut. Accordingly, lower temperature is more preferred in order to prevent a decline in the yield due to the cut failure of the adhesive sheet.
  • UV curing adhesive agent used in the adhesive layer of the dicing tape
  • ultraviolet rays are radiated to the dicing tape from the side of its face opposite to its semiconductor-wafer-stuck face before or after the expand, so as to cure the UV curing adhesive agent.
  • the adhesive force between the UV curing adhesive agent and the adhesive sheet lowers, thereby making picking-up in the subsequent step V) easy.
  • an adsorbing collet 21 , a needle clamp 22 and so on, as illustrated in FIG. 5 or 9 are used as picking-up means to pick up a number of the adhesive-sheet-stuck semiconductor chips, which are individual pieces, and this is mounted onto a semiconductor-chip-mounting area of a semiconductor-chip-mounting support member.
  • the adhesive sheet is then heated and cured. Usually, the heating and curing are performed at a temperature ranging from 100 to 220° C.
  • the semiconductor producing method of the invention is not limited to the above-mentioned processes, and may comprise any other step.
  • the method may comprise the step of radiating ultraviolet rays, infrared rays or microwaves into the adhesive sheet, or the step of heating or cooling the adhesive sheet. If necessary, the method comprises a wire bonding step, a sealing step or the like after the step V) is performed.
  • Cyclohexanone was added to a composition composed of: 30 parts by weight of a bisphenol F type epoxy resin (trade name: YD-8170C, manufactured by Tohto Kasei Co., Ltd., epoxy equivalent: 160) and 10 parts by weight of a cresol novolak type epoxy resin (trade name: YDCN-703, manufactured by Tohto Kasei Co., Ltd., epoxy equivalent: 210) as epoxy resins; 27 parts by weight of a phenol novolak resin (trade name: Priophen LF2882, manufactured by Dainippon Ink & Chemicals, Inc.) as a curing agent for the epoxy resins; 28 parts by weight of an epoxy-group-containing acrylic rubber (trade name: HTR-860P-3DR, manufactured by Nagase Chemtex Corp.; weight-average molecular weight based on gel permeation chromatography: 800000, glycidyl methacrylate: 3% by weight, and Tg: ⁇ 7° C.) as an epoxy-group
  • This adhesive agent varnish was applied onto a polyethylene terephthalate film, 50 ⁇ m in thickness, subjected to releasing treatment, and then the resultant was heated and dried at 90° C. for 10 minutes and at 120° C. for 5 minutes to give a coating film 25 ⁇ m in thickness. In this way, an adhesive sheet in a B-stage state was produced. In the same manner, an adhesive sheet, 75 ⁇ m in thickness, in a B-stage state was produced.
  • adhesive sheets were produced in the same way as in Example 1.
  • the adhesive sheet of Example 6 was an adhesive sheet obtained by subjecting the sheet of Example 1 to heat treatment at 40° C. for 24 hours, thereby lowering the breaking elongation.
  • a tensile tester (a digital load indicator manufactured by Imada Corp.) was used to measure the stress-strain curve thereof at a distance between its chuck of 20 mm and a tensile speed of 0.5 m/minute, and then the breaking strength and breaking elongation thereof at 25° C.
  • a dynamic viscoelasticity measuring device (DVE-V4, manufactured by Rheology Co.) was used to measure the storage elastic modulus of each of the B-stage state adhesive sheets (sample size: 20 mm in length ⁇ 4 mm in width ⁇ 74 ⁇ m in thickness, temperature range: ⁇ 30 to 100° C., temperature-raising rate: 5° C./minute, and tensile mode: 10 Hz or 900 Hz under an automatic static load).
  • a tacking tester manufactured by Rhesca Company, Limited was used to measure the tacking strength of each of the B-stage state adhesive sheets at 25° C. in accordance with a method described in JISZ0237-1991 (probe diameter: 5.1 mm, peeling speed: 10 mm/s, contact load: 100 gf/cm 2 , and contact time: 1 second).
  • a chip (5 mm square) and a gold plating substrate (a copper foil fitted flexible substrate electroplated with gold (Ni: 5 ⁇ m, and Au: 0.3 ⁇ m)) were laminated onto each of the adhesive sheets on a hot plate of 120° C. temperature, and then the sheet was cured at 130° C. for 30 minutes and at 170° C. for 1 hour. About this sample, the peel strength thereof was measured at 260° C. before the sample absorbed moisture and after the sample absorbed moisture at 85° C./85% RH for 48 hours.
  • Each of the adhesive sheets having a width of 10 mm and a wafer were laminated onto each other with a hot roll laminator (at 60° C., 0.3 m/minute and 0.3 MPa). Thereafter, a UTM-4-100 model tensilon manufactured by Toyobalwin was used to peel the adhesive sheet at an angle of 90° and a tensile speed of 50 mm/minute in an atmosphere of 25° C. temperature. The peel strength at this time was obtained. In the case that the adhesive sheet had a peel strength of 30 N/m or more, the laminate property was judged to be good. In the case that the adhesive sheet had a peel strength of less than 30 N/m, the laminate property was judged to be poor.
  • thermo-compression bonding tester manufactured by Tester Sangyo Co., Ltd.
  • a sample obtained by punching out each of the samples and a PET film thereon into the form of a 1 ⁇ 2 cm stripe was pressed at a hot plate temperature of 160° C. and a pressure of 1 MPa for 18 seconds. Thereafter, the length of the resin forced out from the edge of the sample was measured with an optical microscope. This was defined as the flow amount.
  • the used dicing tape was a dicing tape (UC3004M-80) manufactured by the Furukawa Electric Co., Ltd.
  • the film thickness of the dicing tape was 80 ⁇ m.
  • a semiconductor wafer to be diced was stuck onto the adhesive sheet face of the dicing tape integrated type adhesive sheet. At this time, the used semiconductor wafer was a semiconductor wafer having a thickness of 80 ⁇ m.
  • the laminating temperature was 60° C. Subsequently, a dicing cutter was used to half-cut-dice the wafer, and then washed and dried to work the wafer into a cut-permissible state, so that at least two semiconductor chips would be yielded when external force was applied to the wafer. Thereafter, the dicing tape integrated type adhesive sheet was bent, thereby cutting the adhesive sheet and the semiconductor wafer to yield adhesive-sheet-stuck semiconductor chips. If the semiconductor wafer and the adhesive sheet were simultaneously cut by 90% or more of the distance over which they were half-cut-diced, the breakability thereof was judged to be good. If they were simultaneously cut by less than 90% thereof, the breakability was judged to be poor.
  • each of the samples was passed through an IR reflow furnace, the temperature in which was set to raise to the highest temperature of the sample surface 260° C. and keep the temperature for 20 seconds. The sample was then allowed to stand still at room temperature, so as to be cooled. This treatment was repeated 2 times. In this sample, cracks were examined with the naked eye and an ultrasonic microscope. The case that in none of the samples, the number of which was ten, a crack was generated was judged to be good ( ⁇ ). The case that in one or more of the samples, a crack was generated was judged to be poor (x).
  • the samples were allowed to stand still in an atmosphere of ⁇ 55° C. temperature for 30 minutes, and then allowed to stand still in an atmosphere of 125° C. temperature for 30 minutes. This step, which was one cycle, was repeated 1000 times. After the 1000 cycles, the sample was observed with an ultrasonic microscope. The case that in none of the samples, the number of which was ten, a break such as a crack or peeling was generated was judged to be good ( ⁇ ). The case that in one or more of the samples, a break was generated was judged to be poor (x).
  • Examples 1 to 4 their elastic moduli, breaking strengths and the breaking elongations are within the ranges specified in the invention, and their laminate property and breakability are good. Their handleability is excellent since their tacking strengths are small at room temperature, and further their reflow crack resistance and temperature cycle resistance are also excellent since their adhesive forces at high temperature are excellent. About Example 5, its breakability is good but the laminate property at 60° C. is poor so that Example 5 is unsuitable for low-temperature lamination. About Comparative Examples 1 to 5, their elastic moduli, breaking strengths and breaking elongations are out of the ranges specified in the invention. Thus, all of them are poor in breakability.
  • An adhesive sheet was laminated at 60° C. onto a semiconductor wafer (thickness: 80 ⁇ m) to be diced with a hot roll laminator (Riston, manufactured by Du Pont). A laser ray was radiated into the resultant adhesive-sheet-stuck semiconductor wafer A, as illustrated in FIG. 2 , thereby forming modified regions inside the wafer.
  • a dicing tape ((UC3004M-80) manufactured by the Furukawa Electric Co., Ltd.) was stacked on the other face of the adhesive sheet.
  • a ring made of stainless steel was fitted to the periphery of the dicing tape.
  • the ring was fixed thereto and the dicing tape was expanded with an expanding device. As for conditions for this expand, the expand speed was 30 mm/, and the expand amount was 15 mm.
  • a laser ray was radiated into a semiconductor wafer (thickness: 80 ⁇ m), as illustrated in FIG. 2 , to form modified regions inside the wafer.
  • an adhesive sheet was laminated onto the semiconductor wafer A at 60° C. with a hot roll laminator (Riston, manufactured by Du Pont).
  • a dicing tape ((UC3004M-80) manufactured by the Furukawa Electric Co., Ltd.) was stacked on the other face of the adhesive sheet.
  • a ring made of stainless steel was fitted to the periphery of the dicing tape. Subsequently, the ring was fixed thereto and the dicing tape was expanded with an expanding device. As for conditions for this expand, the expand speed was 30 mm/s, and the expand amount was 15 mm.
  • a laser ray was radiated into a semiconductor wafer (thickness: 80 ⁇ m), as illustrated in FIG. 2 , to form modified regions inside the wafer.
  • a dicing tape integrated type sheet wherein an adhesive sheet and a dicing tape ((UC3004M-80) manufactured by the Furukawa Electric Co., Ltd.) were laminated onto each other, was laminated onto the wafer at 60° C. with a hot roll laminator (Riston manufactured by Du Pont).
  • a ring made of stainless steel was fitted to the periphery of the dicing tape. Subsequently, the ring was fixed thereto and the dicing tape was expanded with an expanding device. As for conditions for this expand, the expand speed was 30 mm/s, and the expand amount was 15 mm.
  • a laser ray was radiated into a semiconductor wafer (thickness: 80 ⁇ m), as illustrated in FIG. 2 , to form modified regions inside the wafer.
  • an adhesive sheet was laminated onto the wafer at 60° C. with a hot roll laminator (Riston manufactured by Du Pont). Thereafter, the adhesive sheet was heated at 120° C. for 10 minutes.
  • a dicing tape (UC3004M-80) manufactured by the Furukawa Electric Co., Ltd.) was stacked on the other face of the adhesive sheet.
  • a ring made of stainless steel was fitted to the periphery of the dicing tape. Subsequently, the ring was fixed thereto and the dicing tape was expanded with an expanding device.
  • Step 1 Step 2
  • Step 3 Step 4
  • the length 8 of the adhesive sheet forced out from the edge of the chip without being broken was defined as the forced-out length.
  • the case that the length was zero or more and less than 20 ⁇ m was judged to be very good ( ⁇ ); the case that the length was from 20 to 100 ⁇ m was judged to be good ( ⁇ ); and the case that the length was more than 100 ⁇ m was judged to be poor (X).
  • Examples 7 to 22 their elastic moduli, breaking strengths and the breaking elongations are within the ranges specified in the present invention, and their laminate property and breakability are good. Their handleability is excellent since their tacking strengths are small at room temperature, and further their reflow crack resistance and temperature cycle resistance are also excellent since their adhesive forces at high temperature are excellent. In particular, in Examples 10, 14, 18 and 22, the breakability thereof is improved since the adhesive sheets therein were post-heated. Examples 19 to 22, wherein the breaking elongations of the adhesive sheets were decreased, have excellent breakability.
  • an adhesive sheet which can be stuck onto a wafer at a low temperature of 100° C. or lower, is as flexible as the sheet can be handled at room temperature, and can be cut at the same time as the wafer is cut under ordinary cutting conditions.
  • the adhesive sheet of the present invention it is also possible to apply the following methods simultaneously to a dicing step in the production of a semiconductor device: a wafer-cutting method such as half cut dicing or stealth dicing; and a method of using an adhesive sheet in a wafer-back-face sticking mode. For this reason, the dicing step can be effectively attained.
  • the use of the adhesive sheet of the invention makes it unnecessary to cut the wafer and the adhesive sheet simultaneously with a dicing saw or the like; therefore, the speed of the dicing can be made large. For this reason, according to the adhesive sheet of the invention, the processing speed of semiconductor devices and the yield thereof can be improved.
  • cut faces of the adhesive sheet and a chip thereon can be made consistent with each other within the range of a difference of 100 ⁇ m or less. Even if the cutting is not attained, it can easily be checked whether the adhesive sheet is separated or not; therefore, picking-up failure is not caused and a semiconductor device can be effectively produced.
  • bonding reliability is excellent in the step of jointing a semiconductor element with a semiconductor-element-mounting support member in the production of a semiconductor device, as well.
  • the adhesive sheet of the invention when a semiconductor element is mounted onto a support member, the adhesive sheet of the invention has necessary heat resistance and humidity resistance and exhibits satisfactory workability.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)
US10/559,684 2003-06-06 2004-06-04 Adhesive sheet, dicing tape intergrated type adhesive sheet, and semiconductor device producing method Abandoned US20060128065A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US12/047,200 US20080171187A1 (en) 2003-06-06 2008-03-12 Adhesive sheet, dicing tape integrated type adhesive sheet, and method of producing semiconductor device
US12/219,187 US7968194B2 (en) 2003-06-06 2008-07-17 Dicing tape laminated with adhesive sheet of polymer, thermosetting resin and filler
US12/219,188 US7875500B2 (en) 2003-06-06 2008-07-17 Bonding semiconductor wafer stuck on dicing tape laminated adhesive sheet onto mounting support
US12/219,189 US7968195B2 (en) 2003-06-06 2008-07-17 Dicing tape laminated with adhesive sheet of polymer, epoxy resin and filler
US13/658,985 US8617930B2 (en) 2003-06-06 2012-10-24 Adhesive sheet, dicing tape integrated type adhesive sheet, and method of producing semiconductor device

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2003-161656 2003-06-06
JP2003161656 2003-06-06
JP2003402748 2003-12-02
JP2003-402748 2003-12-02
PCT/JP2004/008150 WO2004109786A1 (ja) 2003-06-06 2004-06-04 接着シート、ダイシングテープ一体型接着シート、及び半導体装置の製造方法

Related Child Applications (4)

Application Number Title Priority Date Filing Date
US12/047,200 Division US20080171187A1 (en) 2003-06-06 2008-03-12 Adhesive sheet, dicing tape integrated type adhesive sheet, and method of producing semiconductor device
US12/219,189 Division US7968195B2 (en) 2003-06-06 2008-07-17 Dicing tape laminated with adhesive sheet of polymer, epoxy resin and filler
US12/219,187 Division US7968194B2 (en) 2003-06-06 2008-07-17 Dicing tape laminated with adhesive sheet of polymer, thermosetting resin and filler
US12/219,188 Division US7875500B2 (en) 2003-06-06 2008-07-17 Bonding semiconductor wafer stuck on dicing tape laminated adhesive sheet onto mounting support

Publications (1)

Publication Number Publication Date
US20060128065A1 true US20060128065A1 (en) 2006-06-15

Family

ID=33513388

Family Applications (6)

Application Number Title Priority Date Filing Date
US10/559,684 Abandoned US20060128065A1 (en) 2003-06-06 2004-06-04 Adhesive sheet, dicing tape intergrated type adhesive sheet, and semiconductor device producing method
US12/047,200 Abandoned US20080171187A1 (en) 2003-06-06 2008-03-12 Adhesive sheet, dicing tape integrated type adhesive sheet, and method of producing semiconductor device
US12/219,187 Active US7968194B2 (en) 2003-06-06 2008-07-17 Dicing tape laminated with adhesive sheet of polymer, thermosetting resin and filler
US12/219,189 Active US7968195B2 (en) 2003-06-06 2008-07-17 Dicing tape laminated with adhesive sheet of polymer, epoxy resin and filler
US12/219,188 Active US7875500B2 (en) 2003-06-06 2008-07-17 Bonding semiconductor wafer stuck on dicing tape laminated adhesive sheet onto mounting support
US13/658,985 Active US8617930B2 (en) 2003-06-06 2012-10-24 Adhesive sheet, dicing tape integrated type adhesive sheet, and method of producing semiconductor device

Family Applications After (5)

Application Number Title Priority Date Filing Date
US12/047,200 Abandoned US20080171187A1 (en) 2003-06-06 2008-03-12 Adhesive sheet, dicing tape integrated type adhesive sheet, and method of producing semiconductor device
US12/219,187 Active US7968194B2 (en) 2003-06-06 2008-07-17 Dicing tape laminated with adhesive sheet of polymer, thermosetting resin and filler
US12/219,189 Active US7968195B2 (en) 2003-06-06 2008-07-17 Dicing tape laminated with adhesive sheet of polymer, epoxy resin and filler
US12/219,188 Active US7875500B2 (en) 2003-06-06 2008-07-17 Bonding semiconductor wafer stuck on dicing tape laminated adhesive sheet onto mounting support
US13/658,985 Active US8617930B2 (en) 2003-06-06 2012-10-24 Adhesive sheet, dicing tape integrated type adhesive sheet, and method of producing semiconductor device

Country Status (5)

Country Link
US (6) US20060128065A1 (ja)
JP (2) JP5017861B2 (ja)
KR (5) KR101177250B1 (ja)
TW (3) TWI318649B (ja)
WO (1) WO2004109786A1 (ja)

Cited By (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060121698A1 (en) * 2004-12-07 2006-06-08 Chih-Ming Hsu Plastic film and heat-dissipating ring for chip cutting
US20060197260A1 (en) * 2005-03-07 2006-09-07 Disco Corporation Laser processing method and laser beam processing machine
US20070066044A1 (en) * 2005-06-01 2007-03-22 Yoshiyuki Abe Semiconductor manufacturing method
US20070196952A1 (en) * 2006-01-11 2007-08-23 Atsushi Yoshimura Manufacturing method of semiconductor device
US20070262420A1 (en) * 2005-01-24 2007-11-15 Kiyoshi Arita Manufacturing Method for Semiconductor Chips, and Semiconductor Chip
EP1884981A1 (en) * 2006-08-03 2008-02-06 STMicroelectronics Ltd (Malta) Removable wafer expander for die bonding equipment.
US20080064986A1 (en) * 2006-08-25 2008-03-13 Uwe Kraemer Puncturing device
US20080113486A1 (en) * 2006-09-29 2008-05-15 Shingo Eguchi Peeling apparatus and manufacturing apparatus of semiconductor device
EP1926137A2 (en) 2006-11-24 2008-05-28 Nitto Denko Corporation Heat-resistant adhesive tape for manufacturing semiconductor device
US20080171187A1 (en) * 2003-06-06 2008-07-17 Teiichi Inada Adhesive sheet, dicing tape integrated type adhesive sheet, and method of producing semiconductor device
US20090075429A1 (en) * 2005-04-27 2009-03-19 Lintec Corporation Sheet-Like Underfill Material and Semiconductor Device Manufacturing Method
US20100055878A1 (en) * 2006-05-23 2010-03-04 Renesas Technology Corp. Fabrication Method of Semiconductor Device
US20100112783A1 (en) * 2007-04-06 2010-05-06 Yuuki Nakamura Adhesive film for semiconductor, composite sheet, and method for producing semiconductor chip using them
EP2200075A1 (en) * 2007-10-09 2010-06-23 Hitachi Chemical Company, Ltd. Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
EP2200074A1 (en) * 2007-10-09 2010-06-23 Hitachi Chemical Company, Ltd. Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
EP2219212A1 (en) * 2007-11-08 2010-08-18 Hitachi Chemical Company, Ltd. Adhesive sheet for semiconductor, and dicing tape integrated adhesive sheet for semiconductor
US20100317173A1 (en) * 2007-02-06 2010-12-16 Lintec Corporation Dicing Tape and Process for Manufacturing a Semiconductor Device
US20100330780A1 (en) * 2008-03-14 2010-12-30 Yong Ha Hwang Multi-function tape for a semiconductor package and method of manufacturing a semiconductor device using the same
US20120025400A1 (en) * 2010-07-28 2012-02-02 Nitto Denko Corporation Film for flip chip type semiconductor back surface, dicing tape-integrated film for semiconductor back surface, process for producing semiconductor device, and flip chip type semiconductor device
US20120028050A1 (en) * 2010-07-28 2012-02-02 Nitto Denko Corporation Film for flip chip type semiconductor back surface, process for producing strip film for semiconductor back surface, and flip chip type semiconductor device
US20120061805A1 (en) * 2010-09-13 2012-03-15 Yasuhiro Amano Dicing die bond film
US20140220765A1 (en) * 2011-10-18 2014-08-07 Fuji Electric Co., Ltd. Method for separating support substrate from solid-phase bonded wafer and method for manufacturing semiconductor device
US8912665B2 (en) 2009-06-15 2014-12-16 Nitto Denko Corporation Dicing tape-integrated film for semiconductor back surface
US9142457B2 (en) 2010-10-01 2015-09-22 Nitto Denko Corporation Dicing die bond film and method of manufacturing semiconductor device
CN105122433A (zh) * 2013-04-08 2015-12-02 日东电工株式会社 半导体装置的制造方法
US20150348821A1 (en) * 2012-12-26 2015-12-03 Hitachi Chemical Company, Ltd. Expansion method, method for manufacturing semiconductor device, and semiconductor device
US20170062650A1 (en) * 2015-08-27 2017-03-02 Mikro Mesa Technology Co., Ltd. Method manufacturing light emitting diode having supporting lay7er attached to temporary adhesive
US20170140974A1 (en) * 2015-11-13 2017-05-18 Nitto Denko Corporation Laminated body and composite body; assembly retrieval method; and semiconductor device manufacturing method
US20170140948A1 (en) * 2015-11-13 2017-05-18 Nitto Denko Corporation Semiconductor package manufacturing method
US9708509B2 (en) 2012-10-09 2017-07-18 Avery Dennison Corporation Adhesives and related methods
US20170213765A1 (en) * 2014-05-23 2017-07-27 Hitachi Chemical Company, Ltd. Die bonding/dicing sheet
CN107286325A (zh) * 2016-04-01 2017-10-24 深圳光启创新技术有限公司 树脂组合物及其应用
US20180005889A1 (en) * 2016-07-01 2018-01-04 Stmicroelectronics (Grenoble 2) Sas Method for collective (wafer-scale) fabrication of electronic devices and electronic device
US20180197776A1 (en) * 2017-01-06 2018-07-12 Disco Corporation Resin package substrate processing method
CN109148350A (zh) * 2017-06-27 2019-01-04 日东电工株式会社 切割带一体型粘接性片
US10325889B1 (en) 2018-01-12 2019-06-18 Mikro Mesa Technology Co., Ltd. Display device including LED devices with selective activation function
US10510578B2 (en) 2014-03-24 2019-12-17 Lintec Corporation Protective film forming film, protective film forming sheet and work product manufacturing method
US10526511B2 (en) 2016-12-22 2020-01-07 Avery Dennison Corporation Convertible pressure sensitive adhesives comprising urethane (meth)acrylate oligomers
US11049421B2 (en) 2015-02-05 2021-06-29 Avery Dennison Corporation Label assemblies for adverse environments

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4816871B2 (ja) * 2004-04-20 2011-11-16 日立化成工業株式会社 接着シート、半導体装置、及び半導体装置の製造方法
CN101451053A (zh) * 2004-05-18 2009-06-10 日立化成工业株式会社 粘接接合片与使用该粘接接合片的半导体装置以及其制造方法
JP2006176719A (ja) * 2004-12-24 2006-07-06 Nitto Denko Corp レーザー加工用粘着シート
JP2006261482A (ja) * 2005-03-18 2006-09-28 Mitsui Chemicals Inc 半導体ウェハ表面保護フィルム及び該保護フィルムを用いる半導体ウェハの保護方法
US20060289966A1 (en) * 2005-06-22 2006-12-28 Dani Ashay A Silicon wafer with non-soluble protective coating
JP4744957B2 (ja) * 2005-07-13 2011-08-10 株式会社ディスコ ウエーハに装着された接着フィルムの破断装置
JP5272284B2 (ja) * 2005-10-06 2013-08-28 日立化成株式会社 接着シート、半導体装置及び半導体装置の製造方法
JP4927393B2 (ja) * 2005-11-30 2012-05-09 古河電気工業株式会社 ダイシングテープ
JP4865312B2 (ja) * 2005-12-05 2012-02-01 古河電気工業株式会社 チップ用保護膜形成用シート
JP4851795B2 (ja) * 2006-01-13 2012-01-11 株式会社ディスコ ウエーハの分割装置
JP2007270125A (ja) * 2006-03-08 2007-10-18 Hitachi Chem Co Ltd 接着シート、一体型シート、半導体装置、及び半導体装置の製造方法
JP4719042B2 (ja) * 2006-03-16 2011-07-06 株式会社東芝 半導体装置の製造方法
JP4979063B2 (ja) * 2006-06-15 2012-07-18 日東電工株式会社 半導体装置の製造方法
JP5380806B2 (ja) * 2006-08-31 2014-01-08 日立化成株式会社 接着シート、一体型シート、半導体装置、及び半導体装置の製造方法
KR101040439B1 (ko) * 2006-10-24 2011-06-09 주식회사 엘지화학 다이싱-다이본딩 필름 및 이를 이용하는 반도체 패키징방법
KR101162819B1 (ko) 2007-04-05 2012-07-05 히다치 가세고교 가부시끼가이샤 반도체 칩의 제조방법, 및 반도체용 접착 필름 및 이것을 이용한 복합 시트
JP4270331B2 (ja) 2007-04-26 2009-05-27 日立化成工業株式会社 多層フィルムの製造方法
JP2009130320A (ja) * 2007-11-28 2009-06-11 Furukawa Electric Co Ltd:The チップ保護用フィルム
JP5345348B2 (ja) * 2008-07-15 2013-11-20 株式会社ディスコ 破断方法及び破断装置
JP2010027857A (ja) * 2008-07-18 2010-02-04 Disco Abrasive Syst Ltd 半導体デバイスの製造方法
JP5444763B2 (ja) * 2008-08-20 2014-03-19 日立化成株式会社 半導体装置の製造方法、それにより製造される半導体装置、及びダイシングテープ一体型接着シート
KR20100050793A (ko) * 2008-11-06 2010-05-14 삼성전자주식회사 반도체 장치 제조 방법
US8580612B2 (en) * 2009-02-12 2013-11-12 Infineon Technologies Ag Chip assembly
JP2010251727A (ja) * 2009-03-24 2010-11-04 Furukawa Electric Co Ltd:The 半導体ウエハ加工用テープ
US7985662B2 (en) * 2009-04-14 2011-07-26 Powertech Technology Inc. Method for manufacturing dies formed with a dielectric layer
TWI507501B (zh) * 2009-06-15 2015-11-11 Lg Chemical Ltd 用於處理晶圓的薄片
JP2011018806A (ja) * 2009-07-09 2011-01-27 Sumitomo Bakelite Co Ltd 半導体用フィルムおよび半導体装置の製造方法
JP2011018804A (ja) * 2009-07-09 2011-01-27 Sumitomo Bakelite Co Ltd 半導体用フィルムおよび半導体装置の製造方法
JP5128575B2 (ja) * 2009-12-04 2013-01-23 リンテック株式会社 ステルスダイシング用粘着シート及び半導体装置の製造方法
US8287996B2 (en) * 2009-12-21 2012-10-16 Intel Corporation Coating for a microelectronic device, treatment comprising same, and method of managing a thermal profile of a microelectronic die
JP4976522B2 (ja) * 2010-04-16 2012-07-18 日東電工株式会社 熱硬化型ダイボンドフィルム、ダイシング・ダイボンドフィルム、及び、半導体装置の製造方法
TW201205098A (en) * 2010-07-16 2012-02-01 Chroma Ate Inc Inspection fixture for semiconductor die test maintaining flatness of carrier portion
KR101649020B1 (ko) 2011-07-01 2016-08-17 후루카와 덴키 고교 가부시키가이샤 접착 필름 및 다이싱 다이 본딩 필름 및 그것을 이용한 반도체 가공방법
KR20130073190A (ko) * 2011-12-23 2013-07-03 제일모직주식회사 다이싱 다이본딩 필름 및 반도체 장치
TWI476259B (zh) * 2012-05-31 2015-03-11 Taiwan First Li Bond Co Ltd 熱熔型無鹵難燃導熱環氧樹脂黏著劑之背膠銅箔及其製造方法
JP6009240B2 (ja) * 2012-06-22 2016-10-19 株式会社ディスコ ウェーハの加工方法
US8679947B1 (en) * 2012-11-07 2014-03-25 International Business Machines Corporation Self-formation of high-density defect-free and aligned nanostructures
JP6021687B2 (ja) * 2013-02-25 2016-11-09 株式会社ディスコ 積層ウェーハの加工方法
JP2014165462A (ja) * 2013-02-27 2014-09-08 Lintec Corp 半導体チップの製造方法
US9059013B2 (en) 2013-03-21 2015-06-16 International Business Machines Corporation Self-formation of high-density arrays of nanostructures
JP6205646B2 (ja) * 2014-03-31 2017-10-04 リンテック株式会社 ダイ接着用複合シート
TWI672354B (zh) * 2014-08-22 2019-09-21 日商琳得科股份有限公司 保護膜形成用片以及附有保護膜的半導體晶片的製造方法
JP6399923B2 (ja) * 2014-12-24 2018-10-03 株式会社ディスコ 板状物のレーザー加工方法
JP6486176B2 (ja) * 2015-04-15 2019-03-20 株式会社ディスコ 被加工物の切削加工方法
JP6523042B2 (ja) * 2015-05-26 2019-05-29 日東電工株式会社 接着シート、ダイシングテープ一体型接着シート、フィルム、半導体装置の製造方法および半導体装置
JP6530242B2 (ja) * 2015-06-01 2019-06-12 日東電工株式会社 半導体裏面用フィルム及びその用途
CN105436710B (zh) 2015-12-30 2019-03-05 大族激光科技产业集团股份有限公司 一种硅晶圆的激光剥离方法
WO2017145979A1 (ja) * 2016-02-23 2017-08-31 リンテック株式会社 フィルム状接着剤複合シート及び半導体装置の製造方法
CN109041580A (zh) * 2016-03-30 2018-12-18 琳得科株式会社 膜状粘接剂、半导体加工用片及半导体装置的制造方法
JP7017334B2 (ja) * 2017-04-17 2022-02-08 日東電工株式会社 ダイシングダイボンドフィルム
US10269756B2 (en) * 2017-04-21 2019-04-23 Invensas Bonding Technologies, Inc. Die processing
JP6961387B2 (ja) * 2017-05-19 2021-11-05 日東電工株式会社 ダイシングダイボンドフィルム
WO2020194613A1 (ja) 2019-03-27 2020-10-01 日立化成株式会社 半導体装置の製造方法、ダイボンディングフィルム、及びダイシング・ダイボンディング一体型接着シート
JP7366490B2 (ja) 2019-04-19 2023-10-23 株式会社ディスコ チップの製造方法
US10991621B2 (en) * 2019-08-05 2021-04-27 Texas Instruments Incorporated Semiconductor die singulation
JP7471879B2 (ja) 2020-03-18 2024-04-22 リンテック株式会社 フィルム状接着剤及びダイシングダイボンディングシート
JP7471880B2 (ja) 2020-03-18 2024-04-22 リンテック株式会社 フィルム状接着剤及びダイシングダイボンディングシート
KR20220007203A (ko) 2020-07-10 2022-01-18 삼성전자주식회사 반도체 패키지 제조 방법

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5965269A (en) * 1995-04-04 1999-10-12 Hitachi Chemical Company, Ltd. Adhesive, adhesive film and adhesive-backed metal foil
US6012818A (en) * 1994-12-20 2000-01-11 3M Innovative Properties Company Retroreflective sheeting articles
US6090468A (en) * 1996-09-10 2000-07-18 Hitachi Chemical Company, Ltd. Multilayer wiring board for mounting semiconductor device and method of producing the same
US6265782B1 (en) * 1996-10-08 2001-07-24 Hitachi Chemical Co., Ltd. Semiconductor device, semiconductor chip mounting substrate, methods of manufacturing the device and substrate, adhesive, and adhesive double coated film
US6521337B2 (en) * 2000-04-20 2003-02-18 Lintec Corporation Adhesive tape for painting
US20030069331A1 (en) * 2000-02-15 2003-04-10 Inada Teiichi Adhesive composition , process for producing the same, adhesive film made with the same, substrate for semiconductor mounting, and semiconductor device
US6673441B1 (en) * 1999-06-18 2004-01-06 Hitachi Chemical Company, Ltd. Adhesive, adhesive member, interconnecting substrate for semiconductor mounting having adhesive member, and semiconductor device containing the same
US7070670B2 (en) * 2000-03-31 2006-07-04 Hitachi Chemical Co., Ltd. Adhesive composition, method for preparing the same, adhesive film using the same, substrate for carrying semiconductor and semiconductor device

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61112345A (ja) * 1984-11-07 1986-05-30 Toshiba Corp 半導体装置の製造方法
JPH0715087B2 (ja) * 1988-07-21 1995-02-22 リンテック株式会社 粘接着テープおよびその使用方法
JPH03159153A (ja) * 1989-11-16 1991-07-09 Sumitomo Electric Ind Ltd 半導体基板の分割方法
JPH054485A (ja) 1991-06-26 1993-01-14 Fuji Electric Co Ltd 任意範囲出力可能なプロツタ装置
JPH05160258A (ja) * 1991-12-03 1993-06-25 Matsushita Electron Corp 半導体装置の製造方法
JPH06125002A (ja) * 1992-10-13 1994-05-06 Sony Corp ウエハブレーキング装置とその方法
JP3467611B2 (ja) * 1995-09-29 2003-11-17 日本テキサス・インスツルメンツ株式会社 半導体装置の製造方法
US6342434B1 (en) * 1995-12-04 2002-01-29 Hitachi, Ltd. Methods of processing semiconductor wafer, and producing IC card, and carrier
MY118036A (en) * 1996-01-22 2004-08-30 Lintec Corp Wafer dicing/bonding sheet and process for producing semiconductor device
JP3787889B2 (ja) 1996-05-09 2006-06-21 日立化成工業株式会社 多層配線板及びその製造方法
JP3411748B2 (ja) 1996-05-09 2003-06-03 日立化成工業株式会社 接着剤付き金属箔、接着シート及び多層配線板
JP3195236B2 (ja) * 1996-05-30 2001-08-06 株式会社日立製作所 接着フィルムを有する配線テープ，半導体装置及び製造方法
JPH10178067A (ja) * 1996-10-15 1998-06-30 Toray Ind Inc 半導体装置用接着剤組成物およびそれを用いた半導体装置用接着剤シート
JP2000248025A (ja) 1999-02-26 2000-09-12 Hitachi Chem Co Ltd アクリル樹脂とこれを用いた接着剤及び接着フィルム並びにアクリル樹脂の製造法
JP2001181586A (ja) 1999-12-28 2001-07-03 Hitachi Chem Co Ltd 接着フィルム、半導体チップ搭載用基板及び半導体装置
JP4505769B2 (ja) * 2000-03-31 2010-07-21 日立化成工業株式会社 接着フィルム、接着フィルムを備えた半導体搭載用配線基板、半導体装置及びその製造方法
JP2002060716A (ja) * 2000-08-24 2002-02-26 Hitachi Chem Co Ltd 低弾性接着剤、低弾性接着部材、低弾性接着部材を備えた半導体搭載用基板及びこれを用いた半導体装置
JP4537555B2 (ja) * 2000-09-11 2010-09-01 新日鐵化学株式会社 半導体パッケージの製造方法及び半導体パッケージ
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
JP3408805B2 (ja) * 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
JP4109823B2 (ja) * 2000-10-10 2008-07-02 株式会社東芝 半導体装置の製造方法
JP3827520B2 (ja) * 2000-11-02 2006-09-27 株式会社ルネサステクノロジ 半導体装置
JP2002158276A (ja) * 2000-11-20 2002-05-31 Hitachi Chem Co Ltd ウエハ貼着用粘着シートおよび半導体装置
JP2002212536A (ja) 2001-01-22 2002-07-31 Hitachi Chem Co Ltd 接着部材とその製造方法、該接着部材を備えた半導体搭載用配線基板及びこれを用いた半導体装置
JP2002226796A (ja) 2001-01-29 2002-08-14 Hitachi Chem Co Ltd ウェハ貼着用粘着シート及び半導体装置
JP2002222819A (ja) * 2001-01-29 2002-08-09 Hitachi Chem Co Ltd 接着フィルム、半導体チップ搭載用基板及び半導体装置
JP4286488B2 (ja) 2001-02-21 2009-07-01 キヤノンマシナリー株式会社 基板切断方法
JP2002256235A (ja) * 2001-03-01 2002-09-11 Hitachi Chem Co Ltd 接着シート、半導体装置の製造方法および半導体装置
JP3724790B2 (ja) 2001-03-21 2005-12-07 住友ベークライト株式会社 半導体装置及びその製造方法
JP2002327165A (ja) * 2001-04-20 2002-11-15 Three M Innovative Properties Co 熱硬化性の接着剤フィルム及びそれを用いた接着構造
US20040068061A1 (en) * 2001-04-20 2004-04-08 Kohichiro Kawate Thermosetting adhesive film, and an adhesive structure based on the use thereof
JP2003096426A (ja) * 2001-09-26 2003-04-03 Hitachi Chem Co Ltd 接着部材
JP2003147323A (ja) * 2001-11-08 2003-05-21 Hitachi Chem Co Ltd 接着剤組成物、接着フィルム、半導体支持部材、半導体装置およびその製造方法
JP3912076B2 (ja) * 2001-11-09 2007-05-09 日立化成工業株式会社 接着シートならびに半導体装置およびその製造方法
JP4358502B2 (ja) 2002-03-12 2009-11-04 浜松ホトニクス株式会社 半導体基板の切断方法
AU2003211581A1 (en) * 2002-03-12 2003-09-22 Hamamatsu Photonics K.K. Method of cutting processed object
JP2004095844A (ja) 2002-08-30 2004-03-25 Lintec Corp ウエハダイシング・接着用シートおよび半導体装置の製造方法
JP4770126B2 (ja) 2003-06-06 2011-09-14 日立化成工業株式会社 接着シート
JP5017861B2 (ja) * 2003-06-06 2012-09-05 日立化成工業株式会社 接着シート、及びダイシングテープ一体型接着シート
US20050227064A1 (en) * 2004-04-01 2005-10-13 Hwail Jin Dicing die bonding film

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6012818A (en) * 1994-12-20 2000-01-11 3M Innovative Properties Company Retroreflective sheeting articles
US5965269A (en) * 1995-04-04 1999-10-12 Hitachi Chemical Company, Ltd. Adhesive, adhesive film and adhesive-backed metal foil
US6090468A (en) * 1996-09-10 2000-07-18 Hitachi Chemical Company, Ltd. Multilayer wiring board for mounting semiconductor device and method of producing the same
US6265782B1 (en) * 1996-10-08 2001-07-24 Hitachi Chemical Co., Ltd. Semiconductor device, semiconductor chip mounting substrate, methods of manufacturing the device and substrate, adhesive, and adhesive double coated film
US6673441B1 (en) * 1999-06-18 2004-01-06 Hitachi Chemical Company, Ltd. Adhesive, adhesive member, interconnecting substrate for semiconductor mounting having adhesive member, and semiconductor device containing the same
US20030069331A1 (en) * 2000-02-15 2003-04-10 Inada Teiichi Adhesive composition , process for producing the same, adhesive film made with the same, substrate for semiconductor mounting, and semiconductor device
US7070670B2 (en) * 2000-03-31 2006-07-04 Hitachi Chemical Co., Ltd. Adhesive composition, method for preparing the same, adhesive film using the same, substrate for carrying semiconductor and semiconductor device
US6521337B2 (en) * 2000-04-20 2003-02-18 Lintec Corporation Adhesive tape for painting

Cited By (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8617930B2 (en) 2003-06-06 2013-12-31 Hitachi Chemical Co., Ltd. Adhesive sheet, dicing tape integrated type adhesive sheet, and method of producing semiconductor device
US20080171187A1 (en) * 2003-06-06 2008-07-17 Teiichi Inada Adhesive sheet, dicing tape integrated type adhesive sheet, and method of producing semiconductor device
US20060121698A1 (en) * 2004-12-07 2006-06-08 Chih-Ming Hsu Plastic film and heat-dissipating ring for chip cutting
US20070262420A1 (en) * 2005-01-24 2007-11-15 Kiyoshi Arita Manufacturing Method for Semiconductor Chips, and Semiconductor Chip
US8383436B2 (en) * 2005-01-24 2013-02-26 Panasonic Corporation Manufacturing method for semiconductor chips, and semiconductor chip
US20060197260A1 (en) * 2005-03-07 2006-09-07 Disco Corporation Laser processing method and laser beam processing machine
US20090075429A1 (en) * 2005-04-27 2009-03-19 Lintec Corporation Sheet-Like Underfill Material and Semiconductor Device Manufacturing Method
US20070066044A1 (en) * 2005-06-01 2007-03-22 Yoshiyuki Abe Semiconductor manufacturing method
US7737001B2 (en) * 2005-06-01 2010-06-15 Renesas Technology Corp. Semiconductor manufacturing method
US20070196952A1 (en) * 2006-01-11 2007-08-23 Atsushi Yoshimura Manufacturing method of semiconductor device
US20100055878A1 (en) * 2006-05-23 2010-03-04 Renesas Technology Corp. Fabrication Method of Semiconductor Device
US8703583B2 (en) 2006-05-23 2014-04-22 Renesas Electronics Corporation Fabrication method of semiconductor device
US7675170B2 (en) 2006-08-03 2010-03-09 Stmicroelectronics Ltd Removable wafer expander for die bonding equipment
EP1884981A1 (en) * 2006-08-03 2008-02-06 STMicroelectronics Ltd (Malta) Removable wafer expander for die bonding equipment.
US20080032489A1 (en) * 2006-08-03 2008-02-07 Stmicroelectronics Ltd. Removable wafer expander for die bonding equipment
US20080064986A1 (en) * 2006-08-25 2008-03-13 Uwe Kraemer Puncturing device
US8889438B2 (en) 2006-09-29 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device
US10134784B2 (en) 2006-09-29 2018-11-20 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device
US9570329B2 (en) 2006-09-29 2017-02-14 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device
US9397126B2 (en) 2006-09-29 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device
US9087931B2 (en) 2006-09-29 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device
US20080113486A1 (en) * 2006-09-29 2008-05-15 Shingo Eguchi Peeling apparatus and manufacturing apparatus of semiconductor device
US8137417B2 (en) * 2006-09-29 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device
EP1926137A3 (en) * 2006-11-24 2009-07-29 Nitto Denko Corporation Heat-resistant adhesive tape for manufacturing semiconductor device
EP1926137A2 (en) 2006-11-24 2008-05-28 Nitto Denko Corporation Heat-resistant adhesive tape for manufacturing semiconductor device
US20100317173A1 (en) * 2007-02-06 2010-12-16 Lintec Corporation Dicing Tape and Process for Manufacturing a Semiconductor Device
US20100112783A1 (en) * 2007-04-06 2010-05-06 Yuuki Nakamura Adhesive film for semiconductor, composite sheet, and method for producing semiconductor chip using them
US8404564B2 (en) * 2007-04-06 2013-03-26 Hitachi Chemical Company, Ltd. Adhesive film for semiconductor, composite sheet, and method for producing semiconductor chip using them
TWI473151B (zh) * 2007-10-09 2015-02-11 Hitachi Chemical Co Ltd 附黏著膜之半導體晶片的製造方法、用於該製造方法的半導體用黏著膜以及半導體裝置的製造方法
US8071465B2 (en) * 2007-10-09 2011-12-06 Hitachi Chemical Company, Ltd. Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
EP2200074A1 (en) * 2007-10-09 2010-06-23 Hitachi Chemical Company, Ltd. Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
TWI473152B (zh) * 2007-10-09 2015-02-11 Hitachi Chemical Co Ltd 附黏著膜之半導體晶片的製造方法、用於該製造方法的半導體用黏著膜、以及半導體裝置的製造方法
US8198176B2 (en) * 2007-10-09 2012-06-12 Hitachi Chemical Company, Ltd. Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
US20100311227A1 (en) * 2007-10-09 2010-12-09 Keiichi Hatakeyama Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
KR101176431B1 (ko) 2007-10-09 2012-08-30 히다치 가세고교 가부시끼가이샤 접착 필름이 부착된 반도체칩의 제조 방법, 이 제조 방법에 사용되는 반도체용 접착 필름, 및 반도체 장치의 제조 방법
EP2200075A1 (en) * 2007-10-09 2010-06-23 Hitachi Chemical Company, Ltd. Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
EP2200075A4 (en) * 2007-10-09 2011-12-07 Hitachi Chemical Co Ltd METHOD FOR PRODUCING A SEMICONDUCTOR CHIP WITH A LONG-TERM FILM, A LONG-TERM FOR A SEMICONDUCTOR USED IN THE PROCESS, AND METHOD FOR PRODUCING A SEMICONDUCTOR CONSTRUCTION ELEMENT
EP2200074A4 (en) * 2007-10-09 2011-12-07 Hitachi Chemical Co Ltd METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP WITH ADHESIVE FILM, SEMICONDUCTOR ADHESIVE FILM USED IN THE METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
US20100267199A1 (en) * 2007-10-09 2010-10-21 Keiichi Hatakeyama Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
US9969909B2 (en) 2007-11-08 2018-05-15 Hitachi Chemical Company, Ltd. Adhesive sheet for semiconductor, and dicing tape integrated adhesive sheet for semiconductor
US20100266842A1 (en) * 2007-11-08 2010-10-21 Masaki Yamada Adhesive sheet for semiconductor, and dicing tape integrated adhesive sheet for semiconductor
EP2219212A4 (en) * 2007-11-08 2012-07-11 Hitachi Chemical Co Ltd ADHESIVE FILM FOR A SEMICONDUCTOR AND SAW FILM STRIP WITH THE SHEET FOR A SEMICONDUCTOR
EP2219212A1 (en) * 2007-11-08 2010-08-18 Hitachi Chemical Company, Ltd. Adhesive sheet for semiconductor, and dicing tape integrated adhesive sheet for semiconductor
US8309219B2 (en) * 2008-03-14 2012-11-13 Cheil Industries, Inc. Multi-function tape for a semiconductor package and method of manufacturing a semiconductor device using the same
US20100330780A1 (en) * 2008-03-14 2010-12-30 Yong Ha Hwang Multi-function tape for a semiconductor package and method of manufacturing a semiconductor device using the same
US8912665B2 (en) 2009-06-15 2014-12-16 Nitto Denko Corporation Dicing tape-integrated film for semiconductor back surface
US20120028050A1 (en) * 2010-07-28 2012-02-02 Nitto Denko Corporation Film for flip chip type semiconductor back surface, process for producing strip film for semiconductor back surface, and flip chip type semiconductor device
US9293387B2 (en) * 2010-07-28 2016-03-22 Nitto Denko Corporation Film for flip chip type semiconductor back surface, dicing tape-integrated film for semiconductor back surface, process for producing semiconductor device, and flip chip type semiconductor device
US20120025400A1 (en) * 2010-07-28 2012-02-02 Nitto Denko Corporation Film for flip chip type semiconductor back surface, dicing tape-integrated film for semiconductor back surface, process for producing semiconductor device, and flip chip type semiconductor device
US9123794B2 (en) 2010-09-13 2015-09-01 Nitto Denko Corporation Dicing die bond film
US20120061805A1 (en) * 2010-09-13 2012-03-15 Yasuhiro Amano Dicing die bond film
KR101846025B1 (ko) 2010-09-13 2018-04-05 닛토덴코 가부시키가이샤 다이싱·다이본드 필름
US9142457B2 (en) 2010-10-01 2015-09-22 Nitto Denko Corporation Dicing die bond film and method of manufacturing semiconductor device
US20140220765A1 (en) * 2011-10-18 2014-08-07 Fuji Electric Co., Ltd. Method for separating support substrate from solid-phase bonded wafer and method for manufacturing semiconductor device
US9147599B2 (en) * 2011-10-18 2015-09-29 Fuji Electric Co., Ltd. Wafer support system and method for separating support substrate from solid-phase bonded wafer and method for manufacturing semiconductor device
US9725623B2 (en) 2012-10-09 2017-08-08 Avery Dennison Corporation Adhesives and related methods
US10533117B2 (en) 2012-10-09 2020-01-14 Avery Dennison Corporation Adhesives and related methods
US9708509B2 (en) 2012-10-09 2017-07-18 Avery Dennison Corporation Adhesives and related methods
US9714365B2 (en) 2012-10-09 2017-07-25 Avery Dennison Corporation Adhesives and related methods
US11685841B2 (en) 2012-10-09 2023-06-27 Avery Dennison Corporation Adhesives and related methods
US11292942B2 (en) 2012-10-09 2022-04-05 Avery Dennison Corporation Adhesives and related methods
US9738817B2 (en) 2012-10-09 2017-08-22 Avery Dennison Corporation Adhesives and related methods
US11008483B2 (en) 2012-10-09 2021-05-18 Avery Dennison Corporation Adhesives and related methods
US10597560B2 (en) 2012-10-09 2020-03-24 Avery Dennison Corporation Adhesives and related methods
US10040974B2 (en) 2012-10-09 2018-08-07 Avery Dennison Corporation Adhesives and related methods
US10457838B2 (en) 2012-10-09 2019-10-29 Avery Dennison Corporation Adhesives and related methods
US10040973B2 (en) 2012-10-09 2018-08-07 Avery Dennison Corporation Adhesives and related methods
US10040978B2 (en) 2012-10-09 2018-08-07 Avery Dennison Corporation Adhesives and related methods
US10035930B2 (en) 2012-10-09 2018-07-31 Avery Dennison Corporation Adhesives and related methods
US10403538B2 (en) 2012-12-26 2019-09-03 Hitachi Chemical Company, Ltd. Expansion method, method for manufacturing semiconductor device, and semiconductor device
US10008405B2 (en) * 2012-12-26 2018-06-26 Hitachi Chemical Company, Ltd Expansion method, method for manufacturing semiconductor device, and semiconductor device
US20150348821A1 (en) * 2012-12-26 2015-12-03 Hitachi Chemical Company, Ltd. Expansion method, method for manufacturing semiconductor device, and semiconductor device
CN105122433A (zh) * 2013-04-08 2015-12-02 日东电工株式会社 半导体装置的制造方法
US10510578B2 (en) 2014-03-24 2019-12-17 Lintec Corporation Protective film forming film, protective film forming sheet and work product manufacturing method
CN111180380A (zh) * 2014-03-24 2020-05-19 琳得科株式会社 保护膜形成膜、保护膜形成用片及加工物的制造方法
US20170213765A1 (en) * 2014-05-23 2017-07-27 Hitachi Chemical Company, Ltd. Die bonding/dicing sheet
US11049421B2 (en) 2015-02-05 2021-06-29 Avery Dennison Corporation Label assemblies for adverse environments
US10468361B2 (en) * 2015-08-27 2019-11-05 Mikro Mesa Technology Co., Ltd. Method of manufacturing light emitting diodes having a supporting layer attached to temporary adhesive
US20170062650A1 (en) * 2015-08-27 2017-03-02 Mikro Mesa Technology Co., Ltd. Method manufacturing light emitting diode having supporting lay7er attached to temporary adhesive
US20170140948A1 (en) * 2015-11-13 2017-05-18 Nitto Denko Corporation Semiconductor package manufacturing method
US20170140974A1 (en) * 2015-11-13 2017-05-18 Nitto Denko Corporation Laminated body and composite body; assembly retrieval method; and semiconductor device manufacturing method
CN107286325A (zh) * 2016-04-01 2017-10-24 深圳光启创新技术有限公司 树脂组合物及其应用
US9870947B1 (en) * 2016-07-01 2018-01-16 Stmicroelectronics (Grenoble 2) Sas Method for collective (wafer-scale) fabrication of electronic devices and electronic device
US20180005889A1 (en) * 2016-07-01 2018-01-04 Stmicroelectronics (Grenoble 2) Sas Method for collective (wafer-scale) fabrication of electronic devices and electronic device
US10526511B2 (en) 2016-12-22 2020-01-07 Avery Dennison Corporation Convertible pressure sensitive adhesives comprising urethane (meth)acrylate oligomers
US10460991B2 (en) * 2017-01-06 2019-10-29 Disco Corporation Resin package substrate processing method
US20180197776A1 (en) * 2017-01-06 2018-07-12 Disco Corporation Resin package substrate processing method
CN109148350A (zh) * 2017-06-27 2019-01-04 日东电工株式会社 切割带一体型粘接性片
US10325889B1 (en) 2018-01-12 2019-06-18 Mikro Mesa Technology Co., Ltd. Display device including LED devices with selective activation function

Also Published As

Publication number Publication date
TW200909595A (en) 2009-03-01
US20080171187A1 (en) 2008-07-17
KR101215728B1 (ko) 2012-12-26
US20080286594A1 (en) 2008-11-20
TWI318649B (en) 2009-12-21
KR101169182B1 (ko) 2012-07-30
KR101177251B1 (ko) 2012-08-24
KR20060021337A (ko) 2006-03-07
KR101204197B1 (ko) 2012-11-26
TWI401302B (zh) 2013-07-11
KR20110094117A (ko) 2011-08-19
KR20120051080A (ko) 2012-05-21
US7968195B2 (en) 2011-06-28
JP5017861B2 (ja) 2012-09-05
US20130224932A9 (en) 2013-08-29
TW200911956A (en) 2009-03-16
KR20120051081A (ko) 2012-05-21
JPWO2004109786A1 (ja) 2006-07-20
JP2011006687A (ja) 2011-01-13
US7968194B2 (en) 2011-06-28
WO2004109786A1 (ja) 2004-12-16
US20080305583A1 (en) 2008-12-11
TWI401326B (zh) 2013-07-11
US20130045585A1 (en) 2013-02-21
KR101177250B1 (ko) 2012-08-24
TW200504230A (en) 2005-02-01
JP5556474B2 (ja) 2014-07-23
US20090186216A1 (en) 2009-07-23
US8617930B2 (en) 2013-12-31
US7875500B2 (en) 2011-01-25
KR20110138301A (ko) 2011-12-26

Similar Documents

Publication Publication Date Title
US8617930B2 (en) Adhesive sheet, dicing tape integrated type adhesive sheet, and method of producing semiconductor device
JP5206769B2 (ja) 接着シート
JP4770126B2 (ja) 接着シート
JP5556070B2 (ja) ダイシングテープ一体型接着シートを用いた半導体装置の製造方法
JP2006183020A (ja) 接着シート、半導体装置、及び半導体装置の製造方法
JP5613982B2 (ja) 半導体チップの製造方法及びダイシングテープ
JP4957064B2 (ja) 半導体装置及びその製造方法
JP2008088411A (ja) 接着シート
JP2009283925A (ja) ダイシングテープ一体型接着シート、ダイシングテープ一体型接着シートの製造方法、及び半導体装置の製造方法
JP4401625B2 (ja) 接着シート
JP5805925B2 (ja) ダイボンディングフィルム及びこれを用いた半導体装置
JP2004256695A (ja) 接着シート、ならびにこれを用いた半導体装置およびその製造方法
JP2009238770A (ja) ダイシングテープ、ダイシングテープ一体型接着シート、及び半導体装置の製造方法
JP5589500B2 (ja) 接着フィルム、ダイシングテープ一体型接着フィルム及び半導体装置の製造方法
JP2014003300A (ja) 接着シート

Legal Events

Date Code Title Description
AS Assignment

Owner name: HITACHI CHEMICAL CO., LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:INADA, TEIICHI;MASHINO, MICHIO;URUNO, MICHIO;REEL/FRAME:017361/0619

Effective date: 20051102

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION