JP7366490B2 - チップの製造方法 - Google Patents
チップの製造方法 Download PDFInfo
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- JP7366490B2 JP7366490B2 JP2019079924A JP2019079924A JP7366490B2 JP 7366490 B2 JP7366490 B2 JP 7366490B2 JP 2019079924 A JP2019079924 A JP 2019079924A JP 2019079924 A JP2019079924 A JP 2019079924A JP 7366490 B2 JP7366490 B2 JP 7366490B2
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- 238000001514 detection method Methods 0.000 claims description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000032798 delamination Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
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- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
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- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
- H01L2223/5446—Located in scribe lines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
4 基台
10 X軸移動ユニット
11 被加工物
11a 表面
11b 裏面
11c 基板
11d 回路層
11e 境界
12 X軸ガイドレール
13 デバイス
14 X軸移動テーブル
15 分割予定ライン
15a 切削溝
16 X軸ボールネジ
17 ダイシングテープ(エキスパンドシート)
17a 表面保護テープ
17b エキスパンドシート
18 X軸パルスモータ
19 環状フレーム
20 支持台
21 被加工物ユニット
22 支持柱
23 チップ
24 テーブルカバー
25 積層体
26 チャックテーブル(保持テーブル)
26a 保持面
26b 枠体
26c1 底部流路
26c2 中央流路
26d 保持部材
26e クランプユニット
27 金属層
28a 吸引源
28b バルブ
30 Y軸移動ユニット
31 被加工物
31a 表面
31b 裏面
31c 基板
32 Y軸ガイドレール
34 Y軸移動ブロック
34a 水平板
34b 垂直板
35 積層体
36 Y軸ボールネジ
38 Y軸パルスモータ
40 Z軸移動ユニット
41 被加工物ユニット
42 Z軸パルスモータ
44 ホルダ
46 スピンドルハウジング
48 切削ユニット
48a 切削ブレード
48b 外周部
48c 傾斜面
48d 曲面
50 カメラユニット(IRカメラ)
52 テープ拡張装置
54 ドラム
54a 上面
58 フレーム保持テーブル
58a 載置面
60 クランプユニット
62 ピストンロッド
64 エアシリンダ
72 切削装置
74 基台
78 X軸Y軸移動機構
80 X軸ガイドレール
80a X軸スケール
82 X軸移動テーブル
84 X軸ボールネジ
86 X軸パルスモータ
90 Y軸ガイドレール
90a Y軸スケール
92 Y軸移動テーブル
92a 底板部
92b 側板部
92c 天板部
92d 空間
92e ナット部
94 Y軸ボールネジ
96 Y軸パルスモータ
98 チャックテーブル(保持テーブル)
100 枠体
100a 開口部
100b プーリー部
100c クランプ
102 保持部材
102a 表面
102b 裏面
102c 吸引路
102d 開口
104 吸引源
108 回転駆動源
108a プーリー
110 ベルト
112 支持構造
114 Z軸移動機構
116 Z軸ガイドレール
118 切削ユニット
118a 切削ブレード
120 スピンドルハウジング
122 Z軸ボールネジ
124 Z軸パルスモータ
128 上部撮像ユニット
132 撮像ユニット支持構造
134 撮像ユニット移動機構
136 Z軸ガイドレール
138 Z軸移動プレート
140 Z軸ボールネジ
142 Z軸パルスモータ
144 支持アーム
146 下部撮像ユニット
148 照明装置
150 可視光用カメラ
A 領域
Claims (4)
- 表面に複数の分割予定ラインを備える被加工物を各分割予定ラインに沿って分割して該被加工物からチップを製造するチップの製造方法であって、
該被加工物の裏面側が露出する様に該被加工物の該表面側が保持テーブルで保持された該被加工物に対して切削ブレードを切り込ませて、各分割予定ラインに沿って該被加工物の該裏面側に該被加工物の該表面には至らない切削溝を形成する切削ステップと、
該被加工物にエキスパンドシートを貼り付ける貼り付けステップと、
該貼り付けステップ及び該切削ステップの後、該エキスパンドシートを拡張することで各分割予定ラインに沿って該被加工物を分割して該被加工物からチップを形成する分割ステップと、を備え、
該貼り付けステップは、該切削ステップの前に行われ、
該貼り付けステップでは、該被加工物の該表面側と、環状フレームの一面と、に該エキスパンドシートを貼り付けて、被加工物ユニットを形成し、
該切削ステップでは、該エキスパンドシートを介して該被加工物の該表面側が該保持テーブルで保持された状態で、該被加工物に該切削溝を形成し、
該被加工物は、炭化ケイ素基板と、該炭化ケイ素基板の一面に設けられ該被加工物の該裏面側に位置する金属層とを含み、
該切削ステップでは、該切削ブレードを該被加工物の該裏面側から切り込ませて該切削溝を形成することを特徴とするチップの製造方法。 - 該保持テーブルは、少なくとも一部が表面から裏面まで透明な保持部材を有し、
該切削ステップの前に、可視光用カメラで該保持部材を介して該被加工物の該表面を撮像して少なくとも1つの分割予定ラインを検出する切削位置検出ステップを更に備えることを特徴とする、請求項1に記載のチップの製造方法。 - 該切削ブレードは、一対の傾斜面又は曲面を外周部に有し、
該切削ステップでは、該切削ブレードで該被加工物を切削することを特徴とする、請求項1又は2に記載のチップの製造方法。 - 該被加工物は、交互に積層された絶縁層と配線層とを含む回路層を該表面側に有し、
該切削ステップでは、該回路層に至らない該切削溝を該被加工物に形成することを特徴とする、請求項1から3のいずれかに記載のチップの製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019079924A JP7366490B2 (ja) | 2019-04-19 | 2019-04-19 | チップの製造方法 |
SG10202003054XA SG10202003054XA (en) | 2019-04-19 | 2020-04-01 | Manufacturing method of chips |
MYPI2020001786A MY195429A (en) | 2019-04-19 | 2020-04-07 | Manufacturing Method Of Chips |
US16/842,235 US11189530B2 (en) | 2019-04-19 | 2020-04-07 | Manufacturing method of chips |
DE102020204895.9A DE102020204895A1 (de) | 2019-04-19 | 2020-04-17 | Herstellungsverfahren für chips |
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JP2019079924A JP7366490B2 (ja) | 2019-04-19 | 2019-04-19 | チップの製造方法 |
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JP2020178064A JP2020178064A (ja) | 2020-10-29 |
JP7366490B2 true JP7366490B2 (ja) | 2023-10-23 |
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US (1) | US11189530B2 (ja) |
JP (1) | JP7366490B2 (ja) |
DE (1) | DE102020204895A1 (ja) |
MY (1) | MY195429A (ja) |
SG (1) | SG10202003054XA (ja) |
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JP7402601B2 (ja) * | 2018-05-09 | 2023-12-21 | リンテック株式会社 | 個片体形成装置および個片体形成方法 |
JP7511976B2 (ja) * | 2020-06-10 | 2024-07-08 | 株式会社ディスコ | ウェーハの加工方法 |
JP2023050847A (ja) | 2021-09-30 | 2023-04-11 | 株式会社ディスコ | 被加工物の分割方法 |
Citations (6)
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JP2010087141A (ja) | 2008-09-30 | 2010-04-15 | Disco Abrasive Syst Ltd | 加工装置 |
JP2010135601A (ja) | 2008-12-05 | 2010-06-17 | Lintec Corp | 半導体ウエハのダイシング方法 |
JP2012079800A (ja) | 2010-09-30 | 2012-04-19 | Disco Abrasive Syst Ltd | 分割方法 |
JP2014053526A (ja) | 2012-09-10 | 2014-03-20 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2014179434A (ja) | 2013-03-14 | 2014-09-25 | Disco Abrasive Syst Ltd | ウェーハの分割方法 |
JP2018014450A (ja) | 2016-07-22 | 2018-01-25 | 株式会社ディスコ | ウェーハの加工方法 |
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JP2010135601A (ja) | 2008-12-05 | 2010-06-17 | Lintec Corp | 半導体ウエハのダイシング方法 |
JP2012079800A (ja) | 2010-09-30 | 2012-04-19 | Disco Abrasive Syst Ltd | 分割方法 |
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JP2018014450A (ja) | 2016-07-22 | 2018-01-25 | 株式会社ディスコ | ウェーハの加工方法 |
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US20200335396A1 (en) | 2020-10-22 |
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