TWI473152B - 附黏著膜之半導體晶片的製造方法、用於該製造方法的半導體用黏著膜、以及半導體裝置的製造方法 - Google Patents

附黏著膜之半導體晶片的製造方法、用於該製造方法的半導體用黏著膜、以及半導體裝置的製造方法 Download PDF

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Publication number
TWI473152B
TWI473152B TW97138934A TW97138934A TWI473152B TW I473152 B TWI473152 B TW I473152B TW 97138934 A TW97138934 A TW 97138934A TW 97138934 A TW97138934 A TW 97138934A TW I473152 B TWI473152 B TW I473152B
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Taiwan
Prior art keywords
semiconductor
adhesive film
semiconductor wafer
film
wafer
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TW97138934A
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English (en)
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TW200924047A (en
Inventor
Keiichi Hatakeyama
Yuuki Nakamura
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Hitachi Chemical Co Ltd
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Publication of TW200924047A publication Critical patent/TW200924047A/zh
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description

附黏著膜之半導體晶片的製造方法、用於該製造方法的半導體用黏著膜、以及半導體裝置的製造方法
本發明是關於一種附黏著膜(film)之半導體晶片(chip)的製造方法、用於該製造方法的半導體用黏著膜、以及半導體裝置的製造方法。
先前，半導體晶片與半導體晶片搭載用支撐構件的接合主要是使用銀漿(silver paste)。然而，隨著半導體晶片的小型化及高性能化以及所使用支撐構件的小型化及細密化，使用銀漿的方法明顯存在以下問題，發生漿料溢出或由於半導體晶片的傾斜所造成的打線接合(wire bonding)時的異常、難以控制黏著劑層的膜厚以及產生黏著劑層的空隙(void)等。另外，在對小型化及高密度化要求較高的可攜式裝置等領域，正在開發及量產在內部積層有多個半導體晶片的半導體裝置，但在製造此種半導體裝置時上述問題特別容易明顯化。因此，近年來使用膜狀的黏著劑(以下，稱為半導體用黏著膜)來代替銀漿。
使用半導體用黏著膜來製造半導體裝置的方法有：(1)分離貼附方式，將半導體用黏著膜切成任意的尺寸(size)，將所獲得的黏著膜貼附於附配線的基材等半導體晶片搭載用支撐構件或者半導體晶片上，再將半導體晶片熱壓接合於其上；以及(2)晶圓(wafer)背面貼附方式，將半導體用黏著膜貼附於半導體晶圓的背面，然後利用旋轉刀片將其分離，獲得附黏著膜之半導體晶片，再將此附 黏著膜之半導體晶片熱壓接合於半導體晶片搭載用支撐構件或者半導體晶片上。近年來，為了謀求半導體裝置製造步驟的簡化，上述(2)之晶圓背面貼附方式成為了主流。
晶圓背面貼附方式中，如上所述，通常是利用旋轉刀片對貼附有半導體用黏著膜的半導體晶圓進行切斷。但是，若藉由使用旋轉刀片的普通切割(dicing)方法來同時切斷半導體晶圓與黏著膜，則存在以下問題：切斷後的半導體晶片側面上會產生裂縫(crack)(晶片裂縫)、或者在切斷截面上黏著膜會起毛刺而產生許多毛邊(burr)。若有此晶片裂縫或毛邊存在，則在拾取(pick up)半導體晶片時半導體晶片易發生破壞。特別是，不破壞自厚度薄化的半導體晶圓分離的半導體晶片而進行拾取是有困難的。
因此，近年來提出有以下方法：將形成於半導體晶圓表面的用於劃分的界道(street)進行切削而形成切割溝，再對晶圓的背面進行研磨直至此切割溝為止而將半導體晶圓分割成各個半導體晶片(例如，參照專利文獻1以及專利文獻2)。而且，在藉由此種先切割方式而獲得的半導體晶片的背面上設置尺寸與半導體晶片相同的黏著膜的方法，有下述方法。
(a)準備藉由先切割方式分割過的半導體晶圓(多個半導體晶片)、半導體用黏著膜以及切割保護膠帶(dicing tape)的積層體，再利用延伸(expand)裝置將切割保護膠帶進行擴張，藉此對半導體用黏著膜進行分割的方法。
(b)準備藉由先切割方式分割過的半導體晶圓(多個 半導體晶片)與半導體用黏著膜的積層體，再利用雷射切片機(laser dicer)沿著晶圓表面的界道(切割過的線)對半導體用黏著膜進行切斷的方法。
專利文獻1：日本專利特開2002－016021號公報專利文獻2：日本專利特開2002－367933號公報
但是，上述(a)的方法存在以下問題：必需另外的延伸裝置，並且在將半導體用黏著膜進行分割時發生膜自晶片端部伸出或毛邊等突出。另外，上述(b)的方法因必需另外的雷射切割裝置，並且必須進行旨在應對界道發生偏移(曲線位移(curve shift))時的每條線的辨認操作，因此難以短時間高效率地將半導體用黏著膜切斷。如此，即使是在半導體裝置的製造中採用先切割方式的情況下，為了謀求兼具組裝性與可靠性，亦必須對黏著膜的分割作進一步的改善。
本發明是鑒於上述情況而完成的，其目的在於提供一種附黏著膜之半導體晶片的製造方法、適用於此附黏著膜之半導體晶片的製造方法的半導體用黏著膜、以及可兼具組裝性與可靠性的半導體裝置的製造方法，上述附黏著膜之半導體晶片的製造方法可高良率地由半導體晶圓獲得半導體晶片，並且可獲得貼附有毛邊非常少且形狀與半導體晶片大致相同的黏著膜的附黏著膜之半導體晶片。
為了解決上述課題，本發明的附黏著膜之半導體晶片的製造方法包括下列步驟：準備積層體的步驟，此積層體 是至少積層有包含多個半導體晶片的分割過的半導體晶圓、半導體用黏著膜、及切割保護膠帶而成，此分割過的半導體晶圓是藉由以下方式獲得，在半導體晶圓的一面上，以小於半導體晶圓的厚度的深度形成將半導體晶圓劃分成多個半導體晶片的切入溝，並對半導體晶圓的未形成切入溝的另一面進行研磨直至切入溝為止，此半導體用黏著膜具有1 μm~15 μm範圍的厚度且具有小於5%的拉伸斷裂伸長率，此拉伸斷裂伸長率小於最大負荷時的伸長率的110%；以及將多個半導體晶片分別朝著積層體的積層方向拾取，藉此將半導體用黏著膜加以分割而獲得附黏著膜之半導體晶片的步驟。
根據本發明的附黏著膜之半導體晶片的製造方法，將先切割方式與上述特定的半導體用黏著膜加以組合，並利用拾取半導體晶片所獲得的剪切力來分割半導體用黏著膜，藉此可高良率地由半導體晶圓獲得半導體晶片，並且可容易地獲得貼附有毛邊非常少且形狀與半導體晶片大致相同的黏著膜的附黏著膜之半導體晶片。
若半導體用黏著膜的厚度小於1 μm，則難以製作黏著膜，若半導體用黏著膜的厚度超過15 μm，則難以藉由拾取半導體晶片來分割半導體用黏著膜。另外，若半導體用黏著膜的拉伸斷裂伸長率大於等於5%，則必須將切割保護膠帶的拉伸量增大至大於等於通常的拉伸量，若拉伸斷裂伸長率相對於最大負荷時的伸長率的比例大於等於110%，則難以一邊抑制毛邊的產生一邊將半導體用黏著膜 完全分割，因此不易獲得符合半導體晶片的形狀的黏著膜。
另外，本發明的半導體裝置的製造方法包括：將藉由本發明的附黏著膜之半導體晶片的製造方法所獲得的附黏著膜之半導體晶片，黏著於其他半導體晶片或者半導體晶片搭載用支撐構件上的步驟。
根據本發明的半導體裝置的製造方法，使用藉由本發明的附黏著膜之半導體晶片的製造方法所獲得的附黏著膜之半導體晶片，而可謀求兼具組裝性與可靠性。
另外，本發明提供一種用於本發明的附黏著膜之半導體晶片的製造方法的半導體用黏著膜，此半導體用黏著膜具有1 μm~15 μm範圍的厚度且具有小於5%的拉伸斷裂伸長率，此拉伸斷裂伸長率小於最大負荷時的伸長率的110%。
根據本發明，可提供一種附黏著膜之半導體晶片的製造方法、適用於此附黏著膜之半導體晶片的製造方法的半導體用黏著膜、以及可兼具組裝性與可靠性的半導體裝置的製造方法，上述附黏著膜之半導體晶片的製造方法可高良率地由半導體晶圓獲得半導體晶片，並且可獲得貼附有毛邊非常少且形狀與半導體晶片大致相同的黏著膜的附黏著膜之半導體晶片。
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下。
以下，就本發明的較佳實施形態加以詳細說明。
圖1、2、3、4及5是用以說明本發明的附黏著膜之半導體晶片的製造方法的較佳一實施形態的示意截面圖。本實施形態的附黏著膜之半導體晶片的製造方法包括下列步驟：在半導體晶圓1的一個面(電路形成面)上，以小於半導體晶圓的厚度且大於最終完成時厚度的深度D1，形成將半導體晶圓劃分成多個半導體晶片的切入溝21的第1步驟(圖1)；對半導體晶圓的未形成切入溝的另一面進行研磨直至切入溝21、並達到最終完成時厚度為止，藉此獲得含有多個半導體晶片的分割過的半導體晶圓7的第2步驟(圖2)；準備依序將分割過的半導體晶圓7、本發明的半導體用黏著膜8以及切割保護膠帶3加以積層而成的積層體20的第3步驟(圖3)；在將切割保護膠帶3朝著分割過的半導體晶圓7的多個半導體晶片相互分離的方向拉伸的狀態(圖4)下，將多個半導體晶片7a分別朝著積層體的積層方向拾取，藉此分割半導體用黏著膜8而獲得附黏著膜之半導體晶片30的第4步驟(圖5)。經由這些步驟而獲得的附黏著膜之半導體晶片30，具有毛邊非常少且形狀與半導體晶片7a大致相同的黏著膜8a。
半導體晶圓1可使用由單晶矽(silicon)所構成的晶圓，此外亦可使用由多晶矽、各種陶瓷(ceramic)、砷化鎵(gallium arsenide)等化合物半導體等所構成的晶圓。
在上述第1步驟中，如圖1所示，將半導體晶圓1積 層於切割保護膠帶3上，利用切割刀片(dicing blade)4自半導體晶圓的表面(電路面)側進行半切(half cut)成深度大於目標半導體晶片的最終完成時厚度，藉此形成切入溝21。在本實施形態中，較好的是D1比最終完成時厚度大5 μm~50 μm，更好的是大10 μm~30 μm。
在上述第2步驟中，如圖2所示，將背面研磨膠帶6貼附於第1步驟中所獲得的半導體晶圓1的形成有切入溝21的面上，再利用背面研磨裝置的背面研磨輪(back grind wheel)5對半導體晶圓的未形成切入溝的面進行薄化(背面研磨)直至半導體晶圓達到預定的厚度(最終完成時厚度)D2，藉此製作含有多個半導體晶片的分割過的半導體晶圓7。
背面研磨裝置例如可使用Disco股份有限公司製造的全自動研磨機(Full Automatic Grinder)DFG8540等。
背面研磨膠帶6可使用聚對苯二甲酸乙二醇(polyethylene terephthalate)系膠帶等。
上述第3步驟是以如下方法來準備積層體20：依序將半導體用黏著膜8及切割保護膠帶3貼附於分割過的半導體晶圓7的背面(與背面研磨膠帶6側相反的面)上，或者以半導體用黏著膜8位於分割過的半導體晶圓7側的方式，將積層有半導體用黏著膜8及切割保護膠帶3的複合片(sheet)貼附於分割過的半導體晶圓7的背面。
圖3中表示將背面研磨膠帶6積層於分割過的半導體晶圓7上的狀態，但在下一步驟之前將背面研磨膠帶6剝 離。另外，圖3所示的積層體20的切割保護膠帶3上具有作為固定用環(ring)的晶圓環2。
切割保護膠帶3對固定用環具有可固定的程度的黏著性，若可在上述第4步驟中的拾取時進行拉伸(延伸)，而使分割過的半導體晶圓(多個半導體晶片)7相互間具有適度的間隔，則可無特別限制地使用此切割保護膠帶3。例如，可將氯乙烯(vinyl chloride)系膠帶用作切割保護膠帶。商業上可購買的切割保護膠帶，可舉出：「AD－80H」、「T－80MW」(以上是電氣化學工業公司製造，商品名)等。
在上述第4步驟中，利用吸附圓頂(dome)11對經延伸的切割保護膠帶3的下側進行真空吸附，利用上推針10將進行拾取的半導體晶片所具有的部位進行上推，並利用拾取夾頭(pick up collet)12朝著積層體的積層方向(圖5中箭頭C的方向)拾取半導體晶片7a。此時，對半導體用黏著膜8的厚度方向施加剪切力，以半導體晶片7a的形狀進行分割。藉此，可獲得貼附有毛邊非常少且形狀與半導體晶片大致相同的黏著膜8a的附黏著膜之半導體晶片30。
上述步驟中所採用的拾取方式較好的是Renesas Eastern Japan Semiconductor公司的多芯上推方式、三段上推方式等開發用於薄厚度晶片的方式。
在採用多芯上推方式或通常的針(pin)上推方式時，針的配置較好的是將針配置於晶片四角附近以及在四角之 間等間隔地配置。特別是在採用多芯上推方式時，若過多地配置針，則會減小來自切割保護膠帶下側的吸附效果，因此若為10 mm×10 mm左右的尺寸，則較好的是9根左右的配置。
另外，拾取半導體晶片的拾取夾頭12，較好的是將其設為與晶片尺寸大致相同的尺寸。將針上推時的條件以最大上推高度計，較好的是小於等於2000 μm，更好的是小於等於700 μm，尤其好的是小於等於600 μm，特別好的是小於等於500 μm。若上推高度超過2000 μm，則擔心會破壞晶片，因而欠佳。
將針上推的速度較好的是20 mm/s~200 mm/s，更好的是30 mm/s~150 mm/s，尤其好的是50 mm/s~100 mm/s。若速度小於20 mm/s，則有在上推時難以分割黏晶膜(die bonding film)的傾向，因而欠佳。
在本實施形態中，可分成大於等於2個階段進行上推。例如，在上推高度250 μm~1000 μm、上推速度50 mm/s~100 mm/s的條件下進行第1階段的上推，在上推高度1000 μm~2000 μm、上推速度1 mm/s~30 mm/s的條件下進行第2階段的上推。
關於切割保護膠帶3的延伸，將延伸環9自切割保護膠帶3的下側向上方(圖4中箭頭A的方向)上推，藉此將切割保護膠帶3朝著分割過的半導體晶圓(多個半導體晶片)7相互分離的方向(圖4中箭頭B的方向)拉伸。可利用黏晶機(die bonder)裝置來延伸切割保護膠帶3。
至於切割保護膠帶3的延伸量，在初始的切割保護膠帶3的最大寬度為200 mm~300 mm範圍的情況下，以拉伸後的切割保護膠帶3的寬度(最大寬度)與初始的切割保護膠帶3的寬度(最大寬度)之差計，較好的是1 mm~20 mm，更好的是2 mm~15 mm，尤其好的是3 mm~10 mm。
本實施形態中的切割保護膠帶3的延伸量，可小於先前的半導體用黏著膜藉由延伸而切斷時的延伸量。因此，無須追加另外的延伸裝置。
在本實施形態中，藉由應用本發明的特定的半導體用黏著膜，而在上述拾取步驟中自半導體用黏著膜分割出毛邊非常少且形狀與半導體晶片大致相同的黏著膜8a。
以下，就本發明的半導體用黏著膜加以說明。
本發明的半導體用黏著膜具有1 μm~15 μm範圍的厚度且具有小於5%的拉伸斷裂伸長率，此拉伸斷裂伸長率小於最大負荷時的伸長率的110%。此種半導體用黏著膜是含有熱硬化性樹脂及/或熱塑性樹脂而構成。
若半導體用黏著膜的厚度小於1 μm，則難以製作黏著膜，若半導體用黏著膜的厚度超過15 μm，則難以利用拾取半導體晶片來分割半導體用黏著膜。另外，若半導體用黏著膜的拉伸斷裂伸長率大於等於5%，則必須將切割保護膠帶的拉伸量增大至大於等於通常的拉伸量。另外，拉伸斷裂伸長率相對於最大負荷時的伸長率的比例大於等於110%，表示降伏狀態較長或者易發生頸縮 (necking)，此時，難以一邊抑制毛邊的產生一邊將半導體用黏著膜完全分割，因此不易獲得符合半導體晶片的形狀的黏著膜。
就與上述同樣的觀點而言，拉伸斷裂伸長率較好的是小於4%，更好的是小於3.5%。同樣，拉伸斷裂伸長率相對於最大負荷時的伸長率的比率，較好的是小於108%，更好的是小於105%。另外，在拉伸斷裂伸長率與最大負荷時的伸長率一致時，此比率為最低值即100%。
最大應力、最大負荷伸長率以及拉伸斷裂伸長率是藉由以下方式而求得：使用自B－階段(stage)狀態的半導體用黏著膜切出的具有寬度5 mm、長度50 mm以及厚度25 m的尺寸的帶狀試驗片，於25℃環境下、在以下條件下進行拉伸試驗。
拉伸試驗機：SIMADZU製造100N AUTOGRAPH「AGS－100NH」夾盤(chuck)間距離(試驗開始時)：30 mm拉伸速度：5 mm/min
根據藉由拉伸試驗而獲得的應力－應變曲線，讀取最大負荷、最大負荷時的夾盤間長度以及斷裂時的夾盤間長度，利用這些值及試樣截面積的實測值，根據下述式算出最大應力、最大負荷伸長率以及拉伸斷裂伸長率。
最大應力(Pa)＝最大負荷(N)/試樣的截面積(m2 )
最大負荷時的伸長率(%)＝{(最大負荷時的夾盤間長度(mm)－30)/30}×100
拉伸斷裂伸長率(%)={(斷裂時的夾盤間長度(mm)-30)/30}×100
通常，對多個試驗片進行測定，並記錄其平均值作為此半導體用黏著膜的拉伸特性。就再現性的觀點而言，較好的是在上述條件下進行拉伸試驗，但亦可變更為實質上可提供相同試驗結果的其他條件。
另外，就與被黏附體的密著性以及膜的分割性的觀點而言，半導體用黏著膜的厚度較好的是3μm~15μm,更好的是5μm~15μm。
半導體用黏著膜8較好的是含有高分子量成分、熱硬化性成分以及填料(filler)。由這些成分構成半導體用黏著膜8，藉由調整各成分的種類及調配量，可獲得具有上述特定的拉伸特性的半導體用黏著膜8。高分子量成分較好的是熱塑性樹脂。
構成半導體用黏著膜的高分子量成分較好的是具有小於等於60℃的玻璃(glass)轉移溫度(Tg)。另外，較好的是具有大於等於300℃的耐熱性的高分子量成分。適宜的高分子量成分具體例可舉出：聚醯亞胺(polyimide)樹脂、聚醯胺醯亞胺(polyamide-imide)樹脂、苯氧(phenoxy)樹脂、丙烯酸系樹脂(acrylic resin)、聚醯胺(polyamide)樹脂以及胺基甲酸酯(urethane)樹脂。這些高分子量成分可使用1種或者將多種組合使用。這些之中，特別好的是聚醯亞胺樹脂。藉由使用聚醯亞胺樹脂，可一邊將填料的含量維持在一定程度的較小值，一邊容易地對半導體用黏 著膜8賦予如上所述的拉伸特性。
熱硬化性成分是藉由加熱發生交聯而可形成硬化物的成分，例如，熱硬化性成分是由熱硬化性樹脂及其硬化劑所構成。熱硬化性樹脂可使用先前公知的熱硬化性樹脂，並無特別限定，其中就作為半導體周邊材料的方便性(容易獲得高純度品、品種多、易控制反應性)的方面而言，較好的是環氧樹脂、以及1分子中具有至少2個熱硬化性醯亞胺基的醯亞胺化合物。環氧樹脂通常與環氧樹脂硬化劑併用。
環氧樹脂較好的是具有大於等於2個環氧基的化合物。就硬化性或硬化物特性的方面而言，較好的是苯酚(phenol)的縮水甘油醚(glycidyl ether)型環氧樹脂。苯酚的縮水甘油醚型環氧樹脂例如可舉出：雙酚(bisphenol)A、雙酚AD、雙酚S、雙酚F或者鹵(halogen)化雙酚A與表氯醇(epichlorohydrin)的縮合物、苯酚酚醛清漆(phenol novolac)樹脂的縮水甘油醚、甲酚酚醛清漆(cresol novolac)樹脂的縮水甘油醚、以及雙酚A酚醛清漆樹脂的縮水甘油醚。就硬化物的交聯密度高，且可提高膜加熱時的黏著強度的方面而言，這些之中，較好的是酚醛清漆型環氧樹脂(甲酚酚醛清漆樹脂的縮水甘油醚以及苯酚酚醛清漆樹脂的縮水甘油醚等)。這些環氧樹脂可單獨使用或者將大於等於二種加以組合而使用。
環氧樹脂硬化劑例如可舉出：酚系化合物、脂肪族胺(amine)、脂環族胺、芳香族聚胺(polyamine)、聚醯胺、 脂肪族酸酐、脂環族酸酐、芳香族酸酐、雙氰胺(dicyandiamide)、有機酸二醯肼(dihydrazide)、三氟化硼胺錯合物、咪唑(imidazole)類、以及三級胺。這些之中，較好的是酚系化合物，其中特別好的是具有大於等於2個酚性羥基的酚系化合物。更具體而言，較好的是萘酚酚醛清漆樹脂(naphthol novolac resin)以及三苯酚酚醛清漆樹脂(trisphenol novolac resin)。若使用這些酚系化合物作為環氧樹脂硬化劑，則可有效減少用以封裝(package)組裝的加熱時的晶片表面及裝置的污染、或成為臭氣原因的逸氣(out gas)的發生。
藉由調整填料的含量，可控制半導體用黏著膜的拉伸特性。若增加填料的含量，則存在拉伸斷裂伸長率變小的傾向、以及拉伸斷裂伸長率相對於最大負荷時的伸長率的比率變小的傾向。另外，藉由使用適量的填料，亦可獲得提高操作性、提高導熱性、調整熔融黏度、賦予觸變(thixotropic)性等效果。
就實現上述目的之觀點而言，填料較好的是無機填料。更具體而言，較好的是含有選自由氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁晶鬚(aluminum borate whisker)、氮化硼、結晶性二氧化矽(silica)、非晶性二氧化矽以及銻氧化物所組成族群中的至少1種無機材料的無機填料。為了提高導熱性，這些之中較好的是氧化鋁、氮化鋁、氮化硼、結晶性二氧化矽、以及非晶性二氧化矽。為了調整 熔融黏度或賦予觸變性，較好的是氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、結晶性二氧化矽、以及非晶性二氧化矽。另外，為了提高耐濕性，較好的是氧化鋁、二氧化矽、氫氧化鋁、以及銻氧化物。亦可將多種填料混合使用。
若填料的含量增加，則拉伸斷裂伸長率變小並且彈性率變高，從而有斷裂強度上升的傾向，另一方面，由於黏著性下降而存在抗回焊龜裂性(reflow crack resistance)下降的傾向。特別是有在如有機基板的表面上形成有凹凸的被黏附體與半導體晶片間在回焊時易發生破壞的傾向。另外，若填料的含量增加，則亦有對高度加速壽命試驗(HAST試驗，Highly Accelerated Stress Test)等高溫高濕環境下的可靠性試驗的耐性下降的傾向。若填料的含量進一步增加，則存在可將半導體用黏著膜貼附於半導體晶圓上的溫度亦上升的傾向。鑒於如上所述的情況，填料的含量相對於半導體用黏著膜的總質量，較好的是小於30 wt%，更好的是小於25 wt%，尤其好的是小於20 wt%。
較好的是可在小於等於100℃的溫度下將半導體用黏著膜8貼附於作為被黏附體的半導體晶圓上。在此，在將保持於特定溫度的半導體用黏著膜貼附於半導體晶圓上時，若在半導體用黏著膜與半導體晶圓的界面上的剝離(peel)強度大於等於20 N/rn，則判斷可將半導體用黏著膜8貼附於半導體晶圓上。例如，使用設定為小於等於100℃的溫度的加熱輥貼合機(hot roll laminator)將半導體用 黏著膜貼附於半導體晶圓上。在25℃的環境中，在拉伸角度90°、拉伸速度50 mm/min的條件下進行剝離強度的測定。例如，藉由減小填料的含量或者使用具有較低Tg的熱塑性樹脂，而可在小於等於100℃的溫度下獲得可貼附於半導體晶圓上的半導體用黏著膜。半導體用黏著膜8可貼附於半導體晶圓上的溫度，更好的是小於等於95℃，尤其好的是小於等於90℃。在考慮到背面研磨膠帶的耐熱性的情況下，較好的是可在小於等於80℃的溫度下將半導體用黏著膜8貼附於作為被黏附體的半導體晶圓上。
半導體用黏著膜8較好的是，具有將半導體晶片搭載於半導體晶片搭載用支撐構件上時所要求的耐熱性及耐濕性。因此，較好的是通過(pass)抗回焊龜裂性試驗。可將黏著強度作為指標，來評價半導體用黏著膜的抗回焊龜裂性。為了獲得良好的抗回焊龜裂性，在以4×2 mm見方的黏著面積將半導體用黏著膜黏著於半導體晶圓上時，剝離強度在初始較好的是大於等於1.0 kg/cm，在85℃/85%的環境下放置48小時後較好的是大於等於0.5 kg/cm。初始剝離強度更好的是大於等於1.3 kg/cm，尤其好的是1.5 kg/cm。在85℃/85%的環境下放置48小時後的剝離強度，更好的是大於等於0.7 kg/cm，尤其好的是大於等於0.8 kg/cm。
半導體用黏著膜8可藉由以下方法而獲得：例如將含有熱塑性樹脂等高分子量成分、熱硬化性成分、填料以及將這些成分溶解或分散的有機溶劑的塗佈液塗佈於基材膜 上，再利用加熱將有機溶劑自基材膜上的塗佈液中除去。
有機溶劑若可將材料均勻地溶解或分散則無限定，例如可舉出：二甲基甲醯胺(dimethylformamide)、二甲基乙醯胺、N－甲基吡咯烷酮(methylpyrrolidone)、二甲亞碸(dimethyl sulfoxide)、二乙二醇二甲醚(diethylene glycol dimethyl ether)、甲苯(toluene)、苯(benzene)、二甲苯(xylene)、甲基乙基酮(methyl ethyl ketone)、四氫呋喃(tetrahydrofuran)、乙基溶纖劑(ethyl cellosolve)、乙基溶纖劑乙酸酯、丁基溶纖劑、二氧陸圜(dioxane)、環己酮(cyclohexanone)以及乙酸乙酯(ethyl acetate)。這些有機溶劑可單獨使用或者將大於等二種加以組合而使用。
基材膜若可耐受用以除去有機溶劑的加熱則無特別限定。基材膜的例子可舉出：聚酯膜(polyester film)、聚丙烯膜(polypropylene film)、聚對苯二甲酸乙二酯膜、聚醯亞胺膜、聚醚醯亞胺膜、聚醚萘二甲酸酯(polyether naphthalate)膜、以及甲基戊烯(methylpentene)膜。亦可將大於等於2種的這些膜加以組合而成的多層膜用作基材膜。可利用聚矽氧(silicone)系、二氧化矽系等脫模劑等對基材膜的表面進行處理。在除去有機溶劑後，不除去基材膜即可直接用作半導體用黏著膜的支撐體。
亦可在與切割保護膠帶貼合而成的複合片的狀態下保存及使用半導體用黏著膜。藉由使用此種複合片，可簡化半導體裝置的製造步驟。
用於本發明的附黏著膜之半導體晶片的製造方法的半 導體用黏著膜，可供給來作為具有下述構成的黏晶膜。
(a)依序具備基材、含有熱硬化性樹脂及/或熱塑性樹脂的黏著劑層的黏晶膜。
(b)依序具備基材、黏著劑層、及含有熱硬化性樹脂及/或熱塑性樹脂的黏著劑層的黏晶膜。
(c)依序具備基材、含有熱硬化性樹脂及/或熱塑性樹脂的黏接著劑層的黏晶膜。
(a)以及(b)的黏晶膜中的黏著劑層、以及(c)的黏晶膜中的黏接著劑層，是上述本發明的半導體用黏著膜。
在使用(a)的黏晶膜時，可利用以下的任意方法來獲得本發明的積層體。
(1)首先，將上述(a)的黏晶膜的黏著劑層與半導體晶圓相貼合。接著，將黏晶膜的基材剝離。接著，將依序具備黏著劑層及基材的切割保護膠帶構件的黏接劑層、與黏著劑層相貼合。
(2)首先，將上述(a)的黏晶膜的黏著劑層、與依序具備黏著劑層及基材層的切割保護膠帶構件的黏接劑層相貼合。接著，將黏晶膜的基材剝離，將黏著劑層與半導體晶圓相貼合。
在使用(b)的黏晶膜時，可藉由以下方法來獲得本發明的積層體。
(3)將上述(b)的黏晶膜的黏著劑層與半導體晶圓相貼合。在基材以及黏著劑層發揮切割保護膠帶的功能時，可藉此獲得積層體。另外，在將基材剝離後，可將切 割保護膠帶貼合於黏接劑層上而獲得積層體。
在使用(c)的黏晶膜時，可藉由以下方法來獲得本發明的積層體。
(4)首先，將上述(c)的黏晶膜的黏接著劑層與半導體晶圓相貼合。在基材發揮切割保護膠帶的功能時，可藉此獲得積層體。另外，在將基材剝離後，可將切割保護膠帶貼合於黏接劑層上而獲得積層體。
另外，如使用上述(c)的黏晶膜的例子所示，本發明可提供一種附黏著膜之半導體晶片的製造方法，其包括下列步驟：準備積層體的步驟，此積層體是至少積層有包含多個半導體晶片的分割過的半導體晶圓、膜狀黏接著劑、及基材而成，此分割過的半導體晶圓是藉由以下方式獲得，在半導體晶圓的一個面上，以小於半導體晶圓的厚度的深度形成將半導體晶圓劃分成多個半導體晶片的切入溝，對半導體晶圓的未形成切入溝的另一面進行研磨直至切入溝為止，並且上述膜狀黏接著劑具有1 μm~15 μm範圍的厚度且具有小於5%的拉伸斷裂伸長率，此拉伸斷裂伸長率小於最大負荷時的伸長率的110%；以及將多個半導體晶片分別朝著積層體的積層方向拾取，藉此將上述膜狀黏接著劑加以分割而獲得附黏著膜之半導體晶片的步驟。上述基材可使用發揮切割保護膠帶功能的基材。
在本實施形態中，對將本發明的半導體用黏著膜配置於半導體晶圓背面側的情況進行了說明，但本發明的附黏著膜之半導體晶片的製造方法，亦可應用於將半導體晶圓 的電路面與半導體用黏著膜加以貼附的方式。
如上所述，藉由本實施形態的方法所獲得的附黏著膜之半導體晶片30，例如可構成如IC(integrated circuit，積體電路)、LSI(large scale integration，大型積體電路)的半導體元件。附黏著膜之半導體晶片30例如經由黏著膜8a而黏著於其他半導體晶片或半導體晶片搭載用支撐構件上。
半導體晶片搭載用支撐構件例如可舉出：42合金導線架(alloy lead frame)以及銅導線架等導線架；由環氧樹脂、聚醯亞胺系樹脂以及順丁烯二醯亞胺(maleimide)系樹脂等所形成的樹脂膜；將環氧樹脂、聚醯亞胺系樹脂以及順丁烯二醯亞胺系樹脂等熱硬化性樹脂含浸於玻璃不織布或玻璃織布中再使其硬化而獲得的基板；以及玻璃基板及氧化鋁等陶瓷基板。
圖6是藉由此方法所獲得的半導體裝置的一實施形態的截面圖。圖6所示的半導體裝置100包括：附配線的基材(支撐構件)13、經由黏著膜8a而黏著於附配線的基材13上的半導體晶片7a。半導體晶片7a藉由接線(bonding wire)14而與附配線的基材13的配線相連接。另外，半導體晶片7a被埋設有上述構件的密封樹脂層15所密封。
半導體晶片與支撐構件的黏著以及半導體晶片彼此間的黏著，是在例如半導體晶片與支撐構件間或者半導體晶片彼此間挾持有半導體用黏著膜的狀態下，於60℃~300℃下加熱0.1秒~300秒來進行的。
在半導體用黏著膜8含有熱硬化性樹脂時，較好的是將黏著後的半導體晶片進行加熱以促進半導體用黏著膜與被黏附體的密著或硬化，從而增加接合部的強度。此時的加熱條件根據黏著膜的組成作適當調整即可，通常是60℃~220℃、0.1分鐘~600分鐘。在進行樹脂密封時，亦可利用密封樹脂的硬化步驟的加熱。
[實施例]
以下，藉由實施例來詳細說明本發明。但是，本發明並不限定於這些實施例。
<半導體用黏著膜的製作> (實施例1)
向具備溫度計、攪拌機以及氯化鈣管的500 ml四口燒瓶中，加入作為二胺的1,3－雙(3－胺基丙基)四甲基二矽氧烷(0.06 mol)、4,9－二氧癸烷－1,12－二胺(0.04 mol)，以及作為溶劑的150 g的N－甲基－2－吡咯烷酮，並於60℃下進行攪拌、溶解。
在二胺溶解後，各少量添加1,10－(十亞甲基)雙(偏苯三甲酸酯二酐)(0.02 mol)及4,4'－氧二鄰苯二甲酸二酐(0.08 mol)，並於60℃下反應3小時。隨後，一邊吹入N2 氣一邊於170℃下加熱，利用共沸以3小時將反應系統內的水與一部分溶劑一同除去。藉此，獲得聚醯亞胺樹脂的溶液。
向上述所獲得的聚醯亞胺樹脂的N－甲基吡咯烷酮(NMP)溶液(含有100重量份的聚醯亞胺樹脂)中，加入4重量份的甲酚酚醛清漆型環氧(epoxy)樹脂(東都化 成製造)、2重量份的4,4'－[1－[4－[1－(4－羥基苯基)－1－甲基乙基]苯基]亞乙基]雙酚(本州化學製造)、0.5重量份的四苯基硼酸四苯基鏻(tetraphenylphosphonium tetraphenylborate)(東京化成製造)。接著，相對於總固體成分的重量，而加入12 wt%的氮化硼填料(水島合金鐵製造)，相對於總固體成分的重量，而加入3 wt%的Aerosil Filler R972(日本Aerosil製造)，進行充分混練，而獲得清漆(varnish)。
將經調合的清漆塗佈於剝離處理過的聚對苯二甲酸乙二酯膜(帝人杜邦(Teijin DuPont)公司製造，Film A31，厚度50 μm)上，並於80℃下加熱30分鐘，接著於120℃下加熱30分鐘，而形成厚度5 μm的半導體用黏著膜。
(實施例2)
將以與實施例1同樣的方式獲得的清漆塗佈於剝離處理過的聚對苯二甲酸乙二酯膜(帝人杜邦公司製造，Film A31，厚度50 μm)上，並於80℃下加熱30分鐘，接著於120℃下加熱30分鐘，而形成厚度15 μm的半導體用黏著膜。
(比較例1)
將以與實施例1同樣的方式獲得的清漆塗佈於剝離處理過的聚對苯二甲酸乙二酯膜(帝人杜邦公司製造，Film A31，厚度50 μm)上，並於80℃下加熱30分鐘，接著於120℃下加熱30分鐘，而形成厚度25 μm的半導體用黏著膜。
(比較例2)
準備DF－402(日立化成工業股份有限公司製造，商品名，厚度15 μm)來作為比較例2的半導體用黏著膜。
<黏著膜的評價>
(最大應力、最大負荷伸長率、以及拉伸斷裂伸長率)
使用自B－階段狀態的黏著膜切出的帶狀試驗片(寬度5 mm，長度50 mm)進行拉伸試驗。根據所獲得的應力－應變曲線，基於下述計算式而求得最大應力、最大負荷伸長率、以及拉伸斷裂伸長率。拉伸試驗是使用拉伸試驗機(SIMADZU製造100N AUTOGRAPH，AGS－100NH)，在25℃的環境中，在試驗開始時的夾盤間距離30 mm、拉伸速度5 mm/min的條件下進行。
最大應力(Pa)＝最大負荷(N)/試樣的截面積(m2 )
最大負荷伸長率(%)＝[(最大負荷時的夾盤間長度(mm)－30)/30]×100
拉伸斷裂伸長率(%)＝[(斷裂時的夾盤間長度(mm)－30)/30]×100
<附黏著膜之半導體晶片的製作>
藉由圖1及圖2所示的先切割方式，將50 μm厚的半導體晶圓(材質：單晶矽)分割成厚度50 μm、尺寸10 mm×10 mm的半導體晶片。
另一方面，將實施例及比較例中所製作的半導體用黏著膜分別剪切成直徑210 mm的圓形，利用晶圓貼片機(wafer mounter)「DM－300H」(JCM公司製造，商品 名)，在室溫、線壓5 kgf、10 mm/s的條件下，將所獲得的各半導體用黏著膜貼合於切割保護膠帶(電氣化學工業公司製造，商品名「AD－80H」，厚度為80 μm)上，而製作半導體用黏著膜與切割保護膠帶的積層品。另外，在此積層品的切割保護膠帶上亦貼附晶圓環。
利用晶圓貼片機「DM－300H」(JCM公司製造，商品名)，在熱板溫度80℃、線壓5 kgf、3 mm/s的條件下，將上述半導體用黏著膜與切割保護膠帶的積層品貼附於實施了上述先切割處理的分割過的半導體晶圓的背面上，而獲得積層體試樣。
接著，將上述所獲得的積層體試樣設置於可撓性黏晶機(flexible die bonder)「DB－730」(Renesas Eastern Japan Semiconductor公司製造，商品名)上，利用延伸裝置將切割保護膠帶延伸。延伸速度為10 mm/s，延伸量為4 mm。接著，對經延伸的積層體試樣，藉由以4.2 mm間隔將9根鎢鋼頂針(ejector needle)(Micromechanics公司製造，SEN－83－05：針徑為0.7 mm，頂端為350 μm徑的半圓形狀)配置成格子狀的可撓性黏晶機「DB－730」(Renesas Eastern Japan Semiconductor公司製造)的多芯上推夾具，一邊將針上推，一邊利用作為拾取夾頭的橡皮吸嘴(rubber tip)(Micromechanics公司製造，商品名：13－087E－33，10 mm×10 mm)拾取半導體晶片。此時，將針的上推分成2階段來進行，第1階段是在高度300 μm、速度89.4 mm/s的條件下進行上推，隨後，第2階段是在高度1,500 μm、 速度8.94 mm/s的條件下進行上推，上推後在保持時間(拾取計時器)為500 ms的條件下，一邊將針上推一邊拾取半導體晶片。基於下述標準來評價此時的拾取性。
[拾取性]
A：可切斷半導體用黏著膜，可拾取附黏著膜之半導體晶片。
B：無法完全切斷半導體用黏著膜，無法拾取半導體晶片，發生晶片破壞。
如表1所示，可確認：根據具有1 μm~15 μm範圍的厚度且具有小於5%的拉伸斷裂伸長率、此拉伸斷裂伸長率小於最大負荷時的伸長率的110%的實施例1及實施例2的半導體用黏著膜，藉由上述拾取步驟可分割半導體用黏著膜，並可獲得附黏著膜之半導體晶片。另外，可確認：經分割的黏著膜的毛邊亦非常少，具有與半導體晶片大致相同的形狀。相對於此，在使用比較例1及比較例 2的半導體用黏著膜的情況下，無法藉由上述延伸步驟以及拾取步驟將半導體用黏著膜分割。
由以上結果可知，根據使用本發明的半導體用黏著膜的附黏著膜之半導體晶片的製造方法，可獲得貼附有毛邊非常少且形狀與半導體晶片大致相同的黏著膜的附黏著膜之半導體晶片，並可謀求兼具採用先切割方式製造半導體裝置時的組裝性與可靠性。
[產業上之可利用性]
根據本發明，可提供一種附黏著膜之半導體晶片的製造方法、適用於此附黏著膜之半導體晶片的製造方法的半導體用黏著膜、以及可兼具組裝性與可靠性的半導體裝置的製造方法，上述附黏著膜之半導體晶片的製造方法可高良率地由半導體晶圓獲得半導體晶片，並且可獲得貼附有毛邊非常少且形狀與半導體晶片大致相同的黏著膜的附黏著膜之半導體晶片。
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
1‧‧‧半導體晶圓
2‧‧‧晶圓環
3‧‧‧切割保護膠帶
4‧‧‧切割刀片
5、8‧‧‧半導體用黏著膜
6‧‧‧背面研磨膠帶
7‧‧‧分割過的半導體晶圓
7a‧‧‧半導體晶片
8a‧‧‧黏著膜
9‧‧‧延伸環
10‧‧‧上推針
11‧‧‧吸附圓頂
12‧‧‧拾取夾頭
13‧‧‧附配線的基材
14‧‧‧接線
15‧‧‧密封樹脂層
20‧‧‧積層體
21‧‧‧切入溝
30‧‧‧半導體晶片
100‧‧‧半導體裝置
A‧‧‧向上方向
B‧‧‧半導體晶圓相互分離的方向
C‧‧‧積層體的積層方向
D1 ‧‧‧最終完成時厚度的深度
D2 ‧‧‧最終完成時厚度
圖1是用以說明實施形態的附黏著膜之半導體晶片的製造方法的示意截面圖。
圖2是用以說明實施形態的附黏著膜之半導體晶片的製造方法的示意截面圖。
圖3是用以說明實施形態的附黏著膜之半導體晶片的製造方法的示意截面圖。
圖4是用以說明實施形態的附黏著膜之半導體晶片的製造方法的示意截面圖。
圖5是用以說明實施形態的黏著膜之半導體晶片的製造方法的示意截面圖。
圖6是表示半導體裝置的一實施形態的截面圖。
2‧‧‧晶圓環
3‧‧‧切割保護膠帶
7‧‧‧分割過的半導體晶圓
8‧‧‧半導體用黏著膜
9‧‧‧延伸環
20‧‧‧積層體
A‧‧‧向上方向
B‧‧‧半導體晶圓相互分離的方向

Claims (3)

  1. 一種附黏著膜之半導體晶片的製造方法，包括：準備積層體的步驟，上述積層體是至少積層有包含多個半導體晶片的分割過的半導體晶圓、半導體用黏著膜、及切割保護膠帶而成，上述分割過的半導體晶圓是藉由以下方式獲得，在半導體晶圓的一面上，以小於上述半導體晶圓的厚度的深度形成將上述半導體晶圓劃分成多個半導體晶片的切入溝，對上述半導體晶圓的未形成上述切入溝的另一面進行研磨直至上述切入溝為止，並且上述半導體用黏著膜具有1μm~15μm的範圍的厚度並且具有小於5%的拉伸斷裂伸長率，此拉伸斷裂伸長率小於最大負荷時的伸長率的110%；以及將上述多個半導體晶片分別朝著上述積層體的積層方向拾取，藉此利用拾取上述半導體晶片所獲得的剪切力而將上述半導體用黏著膜加以分割而獲得附黏著膜之半導體晶片的步驟。
  2. 一種半導體裝置的製造方法，其包括將藉由如申請專利範圍第1項所述之製造方法而獲得的附黏著膜之半導體晶片黏著於其他半導體晶片或者半導體晶片搭載用支撐構件上的步驟。
  3. 一種用於如申請專利範圍第1項所述之附黏著膜之半導體晶片的製造方法，其具有1μm~15μm範圍的厚度且具有小於5%的拉伸斷裂伸長率，此拉伸斷裂伸長率小於最大負荷時的伸長率的110%。
TW97138934A 2007-10-09 2008-10-09 附黏著膜之半導體晶片的製造方法、用於該製造方法的半導體用黏著膜、以及半導體裝置的製造方法 TWI473152B (zh)

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