JP2007250598A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2007250598A JP2007250598A JP2006068448A JP2006068448A JP2007250598A JP 2007250598 A JP2007250598 A JP 2007250598A JP 2006068448 A JP2006068448 A JP 2006068448A JP 2006068448 A JP2006068448 A JP 2006068448A JP 2007250598 A JP2007250598 A JP 2007250598A
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Abstract
【解決手段】伸び易い第1テープ5aと、第1テープ5a上に設けられた伸びにくい第2テープ5bとを有するダイシングテープ5上に半導体ウエハを搭載し、その後、ダイシングテープ5上で前記半導体ウエハの外側周囲にリング状治具6を搭載し、さらに前記半導体ウエハをダイシングした後、ダイシングテープ5を外周から引き伸ばしてチップ間隔を広げる。これにより、ダイシングテープ5の前記半導体ウエハの下部が伸び易く、かつその外側周囲に伸びにくい領域が形成された状態でダイシングテープ5を外周から引き伸ばすため、ダイシングテープ5を引き伸ばす力が前記半導体ウエハが搭載された第1テープ5aの領域に伝わり、各チップ形成領域の間隔を十分に広げてピックアップを行うことができる。
【選択図】図7
Description
図1は本発明の実施の形態1の半導体装置の製造方法で用いられるダイシングテープの形成方法の一例を示す製造プロセスフロー図、図2は図1に示すダイシングテープに治具を貼り付けた構造の一例を示す断面図、図3は図2に示す治具付きダイシングテープの構造の一例を示す平面図、図4は本実施の形態1の半導体装置の製造方法における裏面研磨までの組み立ての一例を示す断面図である。さらに、図5は本実施の形態1の半導体装置の製造方法におけるウエハマウントまでの一例を示す断面図、図6は本実施の形態1の半導体装置の製造方法における保護テープ剥離までの一例を示す断面図、図7は本実施の形態1の半導体装置の製造方法におけるピックアップまでの一例を示す断面図、図8は本実施の形態1の半導体装置の製造方法におけるレーザダイシング後の構造の一例を示す平面図である。また、図9は本実施の形態1の半導体装置の製造方法におけるエキスパンド後の構造の一例を示す平面図、図10は本実施の形態1の半導体装置の製造方法で用いられるピックアップ装置の構造の一例を示す斜視図、図11は本実施の形態1の半導体装置の製造方法におけるダイボンディング方法の一例を示す斜視図である。さらに、図12は本実施の形態1の半導体装置の製造方法における2段目チップのダイボンディング方法の一例を示す断面図、図13は本実施の形態1の半導体装置の製造方法におけるワイヤボンディング後の構造の一例を示す断面図、図14は本実施の形態1の半導体装置の製造方法における樹脂封止及びバンプ形成後の構造の一例を示す断面図である。
図15は本発明の実施の形態2の半導体装置の製造方法で用いられるダイシングテープの形成方法の一例を示す製造プロセスフロー図、図16は図15に示すダイシングテープに治具を貼り付けた構造及びウエハマウントを行った構造の一例を示す断面図である。さらに、図17は図16に示す治具付きダイシングテープの構造の一例を示す平面図、図18は本実施の形態2の半導体装置の製造方法におけるエキスパンド方法とピックアップ方法の一例を示す断面図である。
1Wa 主面
1Wb 裏面
1Wd 破砕層
1We スクライブエリア
1C 半導体チップ
1S 半導体基板
1L 配線層
1LB パッド(電極)
2 チップ領域
3 基材
4 DAF(接着層)
5 ダイシングテープ
5a 第1テープ
5b 第2テープ
5c 開口部
5d 接着剤
5e 切れ目
6 リング状治具
6a 開口部
7 レーザ
8a 接着層
9 隙間
10 ピックアップ装置
11 支持リング
12 エキスパンドリング
13 ガラス基板
13a 剥離層
14 レーザスキャン
15 UVレジン
16 突き上げ駒
17 配線基板
17a,17b 電極
18C 半導体チップ
18S 半導体基板
18L 配線層
18LB パッド(電極)
19 コレット
20a 接着層
21 ワイヤ
22 封止体
23 はんだボール
24 CSP(半導体装置)
Claims (15)
- (a)第1の伸張率を有する第1テープと、前記第1の伸張率より低い第2の伸張率を有し、かつ前記第1テープ上に設けられた第2テープとを有するダイシングテープを準備する工程と、
(b)前記ダイシングテープ上に接着層を介して半導体ウエハを搭載する工程と、
(c)前記ダイシングテープ上で、かつ前記半導体ウエハの外側周囲に治具を搭載する工程と、
(d)前記半導体ウエハをダイシングする工程と、
(e)前記ダイシングテープを外周から引き伸ばしてチップ間隔を広げる工程とを有することを特徴とする半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、前記第2テープに開口部が形成されており、前記半導体ウエハを前記第2テープの開口部内に配置して前記第1テープと接合することを特徴とする半導体装置の製造方法。
- 請求項2記載の半導体装置の製造方法において、前記治具はリング状であり、前記治具の開口部の直径は、前記第2テープの開口部の直径より大きいことを特徴とする半導体装置の製造方法。
- 請求項1記載の半導体装置の製造方法において、前記第2テープ上に前記半導体ウエハが搭載されており、前記第2テープの前記半導体ウエハの搭載領域に複数の切れ目が形成されていることを特徴とする半導体装置の製造方法。
- 請求項4記載の半導体装置の製造方法において、前記切れ目が格子状に形成されていることを特徴とする半導体装置の製造方法。
- 請求項1記載の半導体装置の製造方法において、前記接着層がDAFであり、前記半導
体ウエハの裏面に前記DAFが配置されていることを特徴とする半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、前記(d)工程で、前記半導体ウエハのスクライブエリアにレーザを照射し、前記レーザによって前記半導体ウエハをダイシングすることを特徴とする半導体装置の製造方法。
- 請求項1記載の半導体装置の製造方法において、前記治具の内周面と前記半導体ウエハの端部との間に隙間が形成されていることを特徴とする半導体装置の製造方法。
- 請求項8記載の半導体装置の製造方法において、前記隙間は、20mm以上であることを特徴とする半導体装置の製造方法。
- 請求項9記載の半導体装置の製造方法において、前記治具の内周面と前記半導体ウエハの端部との距離は、前記第2テープの内側端部と前記半導体ウエハの端部との距離より長いことを特徴とする半導体装置の製造方法。
- 請求項1記載の半導体装置の製造方法において、前記(e)工程で、常温の雰囲気で前記ダイシングテープを外周から引き伸ばすことを特徴とする半導体装置の製造方法。
- 請求項1記載の半導体装置の製造方法において、前記第1テープ及び第2テープは樹脂によって形成され、前記治具は金属によって形成されていることを特徴とする半導体装置の製造方法。
- 請求項1記載の半導体装置の製造方法において、前記第1テープは、ポリオレフィンによって形成され、前記第2テープは、他のポリオレフィンまたはポリエチレンテレフタレートによって形成されていることを特徴とする半導体装置の製造方法。
- 請求項1記載の半導体装置の製造方法において、前記(e)工程の後、
(f)個片化された半導体チップを前記ダイシングテープからピックアップする工程と、
(g)前記ピックアップされた半導体チップを基板上に搭載する工程と、
(h)前記半導体チップの電極と前記基板の電極とを導電性のワイヤで接続する工程と、
(i)前記半導体チップと前記ワイヤを樹脂封止する工程とを有することを特徴とする半導体装置の製造方法。 - 請求項14記載の半導体装置の製造方法において、前記(g)工程で、前記基板上に複数の半導体チップを積層して搭載することを特徴とする半導体装置の製造方法。
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TW095146028A TW200805569A (en) | 2006-03-14 | 2006-12-08 | Process for manufacturing semiconductor device |
US11/657,009 US7563642B2 (en) | 2006-03-14 | 2007-01-24 | Manufacturing method of a semiconductor device |
KR1020070024243A KR20070093836A (ko) | 2006-03-14 | 2007-03-13 | 반도체 장치의 제조 방법 |
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Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2009063825A1 (ja) * | 2007-11-16 | 2009-05-22 | Tokyo Seimitsu Co., Ltd. | ウェーハ処理装置 |
JP2009140947A (ja) * | 2007-12-03 | 2009-06-25 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP2009182178A (ja) * | 2008-01-31 | 2009-08-13 | Disco Abrasive Syst Ltd | デバイスの製造方法 |
JP2010232611A (ja) * | 2009-03-30 | 2010-10-14 | Furukawa Electric Co Ltd:The | ウエハ加工用テープ |
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JP2012079936A (ja) * | 2010-10-01 | 2012-04-19 | Nitto Denko Corp | ダイシング・ダイボンドフィルム、及び、半導体装置の製造方法 |
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Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10242084A (ja) * | 1997-02-24 | 1998-09-11 | Lintec Corp | ウェハ貼着用粘着シートおよび電子部品の製造方法 |
JP2005019962A (ja) * | 2003-06-06 | 2005-01-20 | Hitachi Chem Co Ltd | 接着シート |
JP2005340423A (ja) * | 2004-05-26 | 2005-12-08 | Renesas Technology Corp | 半導体装置の製造方法 |
JP2007005530A (ja) * | 2005-06-23 | 2007-01-11 | Lintec Corp | チップ体の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MY118036A (en) * | 1996-01-22 | 2004-08-30 | Lintec Corp | Wafer dicing/bonding sheet and process for producing semiconductor device |
US6235387B1 (en) * | 1998-03-30 | 2001-05-22 | 3M Innovative Properties Company | Semiconductor wafer processing tapes |
US6589809B1 (en) * | 2001-07-16 | 2003-07-08 | Micron Technology, Inc. | Method for attaching semiconductor components to a substrate using local UV curing of dicing tape |
US6908784B1 (en) * | 2002-03-06 | 2005-06-21 | Micron Technology, Inc. | Method for fabricating encapsulated semiconductor components |
TWI225279B (en) * | 2002-03-11 | 2004-12-11 | Hitachi Ltd | Semiconductor device and its manufacturing method |
KR100468748B1 (ko) * | 2002-07-12 | 2005-01-29 | 삼성전자주식회사 | 프리컷 다이싱 테이프와 범용 다이싱 테이프를 웨이퍼에 마운팅할 수 있는 다이싱 테이프 부착 장비 및 이를포함하는 인라인 시스템 |
WO2004100240A1 (ja) * | 2003-05-12 | 2004-11-18 | Tokyo Seimitsu Co., Ltd. | 板状部材の分割方法及び分割装置 |
JP4505789B2 (ja) | 2004-02-10 | 2010-07-21 | 株式会社東京精密 | チップ製造方法 |
MY138566A (en) * | 2004-03-15 | 2009-06-30 | Hitachi Chemical Co Ltd | Dicing/die bonding sheet |
-
2006
- 2006-03-14 JP JP2006068448A patent/JP2007250598A/ja active Pending
- 2006-12-08 TW TW095146028A patent/TW200805569A/zh unknown
-
2007
- 2007-01-24 US US11/657,009 patent/US7563642B2/en not_active Expired - Fee Related
- 2007-03-13 KR KR1020070024243A patent/KR20070093836A/ko not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10242084A (ja) * | 1997-02-24 | 1998-09-11 | Lintec Corp | ウェハ貼着用粘着シートおよび電子部品の製造方法 |
JP2005019962A (ja) * | 2003-06-06 | 2005-01-20 | Hitachi Chem Co Ltd | 接着シート |
JP2005340423A (ja) * | 2004-05-26 | 2005-12-08 | Renesas Technology Corp | 半導体装置の製造方法 |
JP2007005530A (ja) * | 2005-06-23 | 2007-01-11 | Lintec Corp | チップ体の製造方法 |
Cited By (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009063825A1 (ja) * | 2007-11-16 | 2009-05-22 | Tokyo Seimitsu Co., Ltd. | ウェーハ処理装置 |
JP2009140947A (ja) * | 2007-12-03 | 2009-06-25 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP2009182178A (ja) * | 2008-01-31 | 2009-08-13 | Disco Abrasive Syst Ltd | デバイスの製造方法 |
JP2010232611A (ja) * | 2009-03-30 | 2010-10-14 | Furukawa Electric Co Ltd:The | ウエハ加工用テープ |
JP2010251480A (ja) * | 2009-04-14 | 2010-11-04 | Furukawa Electric Co Ltd:The | 半導体装置の製造方法及びウエハ加工用テープ |
JP2012079936A (ja) * | 2010-10-01 | 2012-04-19 | Nitto Denko Corp | ダイシング・ダイボンドフィルム、及び、半導体装置の製造方法 |
US9142457B2 (en) | 2010-10-01 | 2015-09-22 | Nitto Denko Corporation | Dicing die bond film and method of manufacturing semiconductor device |
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US7563642B2 (en) | 2009-07-21 |
KR20070093836A (ko) | 2007-09-19 |
US20070218651A1 (en) | 2007-09-20 |
TW200805569A (en) | 2008-01-16 |
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