TWI473151B - 附黏著膜之半導體晶片的製造方法、用於該製造方法的半導體用黏著膜以及半導體裝置的製造方法 - Google Patents

附黏著膜之半導體晶片的製造方法、用於該製造方法的半導體用黏著膜以及半導體裝置的製造方法 Download PDF

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Publication number
TWI473151B
TWI473151B TW97138933A TW97138933A TWI473151B TW I473151 B TWI473151 B TW I473151B TW 97138933 A TW97138933 A TW 97138933A TW 97138933 A TW97138933 A TW 97138933A TW I473151 B TWI473151 B TW I473151B
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semiconductor
adhesive film
semiconductor wafer
film
wafer
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TW97138933A
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English (en)
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TW200919575A (en
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Keiichi Hatakeyama
Yuuki Nakamura
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Hitachi Chemical Co Ltd
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
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Description

附黏著膜之半導體晶片的製造方法、用於該製造方法的半導體用黏著膜以及半導體裝置的製造方法
本發明是關於一種附黏著膜(film)之半導體晶片(chip)的製造方法、用於該製造方法的半導體用黏著膜以及半導體裝置的製造方法。
先前，半導體晶片與半導體晶片搭載用支撐構件的接合主要是使用銀漿(silver paste)。然而，隨著半導體晶片的小型化及高性能化以及所使用支撐構件的小型化及細密化，使用銀漿的方法明顯存在以下問題，發生漿料溢出或由於半導體晶片的傾斜所導致的打線接合(wire bonding)時的異常、難以控制黏著劑層的膜厚以及產生黏著劑層的空隙(void)等。另外，在對小型化及高密度化的要求較高的可攜式裝置等領域，正在開發及量產在內部積層有多個半導體晶片的半導體裝置，但在製造此種半導體裝置時上述問題特別容易明顯化。因此，近年來使用膜狀的黏著劑(以下，稱為半導體用黏著膜)來代替銀漿。
使用半導體用黏著膜來製造半導體裝置的方法有：(1)分離貼附方式，將半導體用黏著膜切成任意的尺寸(size)，將所獲得的黏著膜貼附於附配線的基材等半導體晶片搭載用支撐構件或者半導體晶片上，再將半導體晶片熱壓接合於其上；以及(2)晶圓(wafer)背面貼附方式，將半導體用黏著膜貼附於半導體晶圓的背面，然後利用旋轉刀片將其分離，獲得附黏著膜之半導體晶片，再將此附黏著膜之半導體晶片熱壓接合於半導體晶片搭載用支撐構件或者半導體晶片上。近年來，為了謀求半導體裝置製造步驟的簡化，上述(2)之晶圓背面貼附方式成為了主流。
在晶圓背面貼附方式中，如上所述，通常是利用旋轉刀片將貼附有半導體用黏著膜的半導體晶圓切斷。但是，若藉由使用旋轉刀片的普通切割(dicing)方法來同時切斷半導體晶圓與黏著膜，則存在以下問題：切斷後的半導體晶片側面上會產生裂縫(crack)(晶片裂縫)，或者在切斷截面上黏著膜會起毛刺而產生許多毛邊(burr)。若有此晶片裂縫或毛邊存在，則在拾取(pick up)半導體晶片時半導體晶片易發生破壞。特別是，不破壞自厚度薄化的半導體晶圓分離的半導體晶片而進行拾取是有困難的。
因此，近年來，切割半導體晶圓的方法提出有隱形切割(stealth dicing)的方法：即，藉由對半導體晶圓照射雷射光而在半導體晶圓內部選擇性地形成改質部，再沿著改質部切斷半導體晶圓(例如，參照專利文獻1、2)。此方法中，例如，將形成有改質部的半導體晶圓貼附於切割保護膠帶(dicing tape)上，並拉伸切割保護膠帶而對半導體晶圓施加應力，藉此沿著改質部將半導體晶圓分割成多個半導體晶片。
專利文獻1：日本專利特開2002-192370號公報
專利文獻2：日本專利特開2003-338467號公報
然而，僅利用黏晶機(die bonder)裝置的延伸(expand)機構將半導體用黏著膜完全分割是困難的，在半導體用黏著膜的分割中必需另外延伸裝置。因此，即使是隱形切割方式，為了謀求在半導體裝置的製造中兼具組裝性與可靠性，亦必須在黏著膜的分割性方面作進一步改善。
本發明是鑒於上述情況而完成的，其目的在於提供一種附黏著膜之半導體晶片的製造方法、適用於此附黏著膜之半導體晶片的製造方法的半導體用黏著膜、以及可兼具組裝性與可靠性的半導體裝置的製造方法，上述附黏著膜之半導體晶片的製造方法可高良率地由半導體晶圓獲得半導體晶片，並且可獲得貼附有毛邊非常少且形狀與半導體晶片大致相同的黏著膜的附黏著膜之半導體晶片。
為了解決上述課題，本發明的附黏著膜之半導體晶片的製造方法包括下列步驟：準備積層體的步驟，此積層體是依序將半導體晶圓、半導體用黏著膜以及切割保護膠帶加以積層而成，此半導體用黏著膜具有1μm～15μm範圍的厚度且具有小於5%的拉伸斷裂伸長率，此拉伸斷裂伸長率小於最大負荷時的伸長率的110%，並且半導體晶圓具有改質部，此改質部是藉由照射雷射光所形成並用來將半導體晶圓分割成多個半導體晶片的；將切割保護膠帶朝著多個半導體晶片相互分離的方向進行拉伸，在不分割半導體用黏著膜的情況下將半導體晶圓分割成多個半導體晶片的步驟；以及，將多個半導體晶片分別朝著積層體的積層方向拾取，藉此將半導體用黏著膜加以分割而獲得附黏著膜之半導體晶片的步驟。
根據本發明的附黏著膜之半導體晶片的製造方法，將隱形切割方式與上述特定的半導體用黏著膜加以組合，並利用拾取半導體晶片而獲得的剪切力來分割半導體用黏著膜，藉此可高良率地由半導體晶圓獲得半導體晶片，並且可獲得貼附有毛邊非常少且形狀與半導體晶片大致相同的黏著膜的附黏著膜之半導體晶片。
若半導體用黏著膜的厚度小於1μm，則難以製作黏著膜，若半導體用黏著膜的厚度超過15μm，則難以藉由拾取半導體晶片來分割半導體用黏著膜。另外，若半導體用黏著膜的拉伸斷裂伸長率大於等於5%，則必須將切割保護膠帶的拉伸量增大至大於等於通常的拉伸量，若拉伸斷裂伸長率相對於最大負荷時的伸長率的比例大於等於110%，則難以一邊抑制毛邊的產生一邊將半導體用黏著膜完全分割，因此不易獲得符合半導體晶片的形狀的黏著膜。
另外，本發明的半導體裝置的製造方法包括：將藉由本發明的附黏著膜之半導體晶片的製造方法所獲得的附黏著膜之半導體晶片，黏著於其他半導體晶片或者半導體晶片搭載用支撐構件上的步驟。
根據本發明的半導體裝置的製造方法，使用藉由本發明的附黏著膜之半導體晶片的製造方法所獲得的附黏著膜之半導體晶片，而可謀求兼具組裝性與可靠性。
另外，本發明提供一種用於本發明的附黏著膜之半導體晶片的製造方法的半導體用黏著膜，此半導體用黏著膜具有1μm～15μm範圍的厚度且具有小於5%的拉伸斷裂伸長率，此拉伸斷裂伸長率小於最大負荷時的伸長率的110%。
[發明效果]
根據本發明，可提供一種附黏著膜之半導體晶片的製造方法、適用於此附黏著膜之半導體晶片的製造方法的半導體用黏著膜、以及可兼具組裝性與可靠性的半導體裝置的製造方法，上述附黏著膜之半導體晶片的製造方法可高良率地由半導體晶圓獲得半導體晶片，並且可獲得貼附有毛邊非常少且形狀與半導體晶片大致相同的黏著膜的附黏著膜之半導體晶片。
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下。
以下，就本發明的較佳實施形態加以詳細說明。
圖1、2、3及4是用以說明本發明的附黏著膜之半導體晶片的製造方法的較佳一實施形態的示意截面圖。本實施形態的附黏著膜之半導體晶片的製造方法包括下列步驟：準備依序將半導體晶圓1、本發明的半導體用黏著膜5以及切割保護膠帶6加以積層而成的積層體20的步驟(圖2)；藉由將切割保護膠帶6朝著多個半導體晶片8相互分離的方向進行拉伸，而在不分割半導體用黏著膜5的情況下將半導體晶圓1分割成多個半導體晶片8的步驟(圖3)；將多個半導體晶片8分別朝著積層體的積層方向拾取，藉此分割半導體用黏著膜5而獲得附黏著膜之半導體晶片30的步驟(圖4)。經由這些步驟所獲得的附黏著膜之半導體晶片30，具有毛邊非常少且形狀與半導體晶片8大致相同的黏著膜5a。
圖2所示的半導體晶圓1具有改質部3，此改質部3是半導體晶圓藉由照射雷射光所形成且用來將半導體晶圓分割成多個半導體晶片的。例如，自半導體晶圓1的電路面的相反側對半導體晶圓1與背面研磨膠帶(backgrind tape)2的積層物照射雷射光4，藉此可選擇性地形成改質部3(圖1)。此利用雷射光照射的加工，可利用業者所知的所謂隱形切割的方法中通常採用的條件來進行。
半導體晶圓1可使用由單晶矽(silicon)所構成的晶圓，此外亦可使用由多晶矽、各種陶瓷(ceramic)、砷化鎵(gallium arsenide)等化合物半導體等所構成的晶圓。背面研磨膠帶2可使用聚對苯二甲酸乙二酯(polyethylene terephthalate)系膠帶等。
藉由以下方法來準備積層體20：在形成有改質部3的半導體晶圓1的背面(與背面研磨膠帶2側相反的面)上，依序貼附半導體用黏著膜5以及切割保護膠帶6，或者以半導體用黏著膜5位於半導體晶圓1側的方式，將積層有半導體用黏著膜5及切割保護膠帶6的複合片(sheet)貼附於半導體晶圓1的背面上。獲得積層體20的步驟並不限定於如本實施形態的順序。例如，亦可將半導體用黏著膜貼附於半導體晶圓上，然後，利用雷射加工來形成改質部。
切割保護膠帶6對固定用環(ring)具有可固定程度的黏著性，若可沿改質部3進行拉伸來分割半導體晶圓1，則可無特別限制地使用此切割保護膠帶6。例如，可將氯乙烯(vinyl chloride)系膠帶用作切割保護膠帶。商業上可購買的切割保護膠帶，可舉出「AF-80H」、「T-80MW」(以上是電氣化學工業公司製造，商品名)等。
圖2中表示在半導體晶圓1上積層有背面研磨膠帶2的狀態，但在下一步驟前將背面研磨膠帶2剝離。另外，在圖2所示的積層體20的切割保護膠帶6上具有作為固定用環的晶圓環7。
在將半導體晶圓1分割成多個半導體晶片8的步驟中，在將背面研磨膠帶剝離之後，將延伸環9自切割保護膠帶6的下側向上方(圖3中箭頭A的方向)上推，藉此將切割保護膠帶6朝著多個半導體晶片8相互分離的方向(圖3中箭頭B的方向)拉伸。然後，以改質部3為起點，將半導體晶圓1分割成多個半導體晶片8。根據此方法，無須利用切割刀片來切斷半導體晶圓1，因此可提高半導體晶圓分離的速度。切割保護膠帶6的延伸可利用黏晶機裝置來進行。
在上述延伸步驟中並不分割半導體用黏著膜5，而在下一拾取步驟中進行分割。因此，切割保護膠帶6的延伸量只要在可分割半導體晶圓1的範圍內即可。至於延伸量，在初始的切割保護膠帶6的最大寬度為200mm～300mm的範圍時，以拉伸後的切割保護膠帶6的寬度(最大寬度)與初始的切割保護膠帶6的寬度(最大寬度)之差計，較好的是1mm～20mm，更好的是2mm～15mm，尤其好的是3mm～10mm。
本實施形態中的切割保護膠帶6的延伸量，可小於先前的半導體用黏著膜藉由延伸而切斷時的延伸量。因此，無須準備另外的先前的隱形切割方式中所使用的延伸裝置。
另外，在本實施形態的情況下，拉伸切割保護膠帶6的速度(延伸速度)較好的是1mm/s～50mm/s，更好的是2mm/s～30mm/s，尤其好的是3mm/s～20mm/s。若延伸速度小於1mm/s，則存在難以完全分割半導體晶圓1的傾向。
在拾取多個半導體晶片的步驟中，利用吸附圓頂(dome)11對經延伸的切割保護膠帶的下側進行真空吸附，利用上推針10將進行拾取的半導體晶片所具有的部位上推，利用拾取夾頭(pick up collet)12朝著積層體的積層方向(圖4中箭頭C的方向)拾取半導體晶片8。此時，對半導體用黏著膜5的厚度方向施加剪切力，而以半導體晶片8的形狀進行分割。藉此，可獲得貼附有毛邊非常少且形狀與半導體晶片大致相同的黏著膜5a的附黏著膜之半導體晶片30。
上述步驟中所採用的拾取方式較好的是Renesas Eastern Japan Semiconductor公司的多芯上推方式、三段上推方式等開發用於薄厚度晶片的方式。
在採用多芯上推方式或通常的針(pin)上推方式時，針的配置較好的是將針配置在晶片的四角附近以及在四角之間等間隔地配置。特別是在多芯上推方式的情況下，若過多地配置針，則會減小來自切割保護膠帶下側的吸附效果，因此若為10mm×10mm左右的尺寸，則較好的是9根左右的配置。
另外，拾取半導體晶片的拾取夾頭12，較好的是將其設為與晶片尺寸大致相同的尺寸。上推針時的條件以最大上推高度計，較好的是小於等於2000μm，更好的是小於等於700μm，尤其好的是小於等於600μm，特別好的是小於等於500μm。若上推高度超過2000μm，則擔心會破壞晶片，因此欠佳。
上推針的速度較好的是20mm/s～200mm/s，更好的是30mm/s～150mm/s，尤其好的是50mm/s～100mm/s。若速度小於20mm/s，則有在上推時難以分割黏晶膜(die bonding film)的傾向，若速度超過200mm/s，則由於衝擊而導致半導體晶片破損的可能性增加，因此欠佳。
在本實施形態中，可分成大於等於2個階段進行上推。例如，在上推高度250μm～1000μm、上推速度50mm/s～100mm/s的條件下進行第1階段的針上推，在上推高度1000μm～2000μm、上推速度1mm/s～30mm/s的條件下進行第2階段的針上推。
在本實施形態中，藉由應用本發明的特定的半導體用黏著膜，而在上述拾取步驟中自半導體用黏著膜分割出毛邊非常少且形狀與半導體晶片大致相同的黏著膜5a。
以下，就本發明的半導體用黏著膜加以說明。
本發明的半導體用黏著膜具有1μm～15μm的範圍的厚度且具有小於5%的拉伸斷裂伸長率，此拉伸斷裂伸長率小於最大負荷時的伸長率的110%。此種半導體用黏著膜是含有熱硬化性樹脂及/或熱塑性樹脂而構成。
若半導體用黏著膜的厚度小於1μm，則難以製作黏著膜，若半導體用黏著膜的厚度超過15μm，則難以利用拾取半導體晶片來分割半導體用黏著膜。另外，若半導體用黏著膜的拉伸斷裂伸長率大於等於5%，則必須將切割保護膠帶的拉伸量增大至大於等於通常的拉伸量。另外，拉伸斷裂伸長率相對於最大負荷時的伸長率的比例大於等於110%，表示降伏狀態較長或者易發生頸縮(necking)，此時，難以一邊抑制毛邊的產生一邊將半導體用黏著膜完全分割，因此不易獲得符合半導體晶片的形狀的黏著膜。
就與上述同樣的觀點而言，拉伸斷裂伸長率較好的是小於4%，更好的是小於3.5%。同樣，拉伸斷裂伸長率相對於最大負荷時的伸長率的比率，較好的是小於108%，更好的是小於105%。另外，在拉伸斷裂伸長率與最大負荷時的伸長率一致時，此比率成為最低值即100%。
最大應力、最大負荷伸長率以及拉伸斷裂伸長率是藉由以下方式而求得：使用自B階段(stage)狀態的半導體用黏著膜切出的具有寬度5mm、長度50mm以及厚度25μm的尺寸的帶狀試驗片，於25℃環境下、在以下條件下進行拉伸試驗。
拉伸試驗機：SIMADZU製造100N AUTOGRAPH 「AGS-100NH」
夾盤(chuck)間距離(試驗開始時)：30mm
拉伸速度：5mm/min
根據藉由拉伸試驗所獲得的應力一應變曲線，讀取最大負荷、最大負荷時的夾盤間長度以及斷裂時的夾盤間長度，利用這些值及試樣截面積的實測值，根據下述式算出最大應力、最大負荷伸長率以及拉伸斷裂伸長率。
最大應力(Pa)=最大負荷(N)/試樣的截面積(m2 )
最大負荷時的伸長率(%)={(最大負荷時的夾盤間長度(mm)-30)/30}×100
拉伸斷裂伸長率(%)={(斷裂時的夾盤間長度(mm)-30)/30}×100
通常，對多個試驗片進行測定，並記錄其平均值作為該半導體用黏著膜的拉伸特性。就再現性的觀點而言，較好的是在上述條件下進行拉伸試驗，但亦可變更為實質上可提供相同試驗結果的其他條件。
另外，就與被黏附體的密著性以及膜的分割性的觀點而言，半導體用黏著膜的厚度較好的是3μm～15μm，更好的是5μm～15μm。
半導體用黏著膜5較好的是含有高分子量成分、熱硬化性成分以及填料(filler)。由這些成分構成半導體用黏著膜5，藉由調整各成分的種類及調配量，可獲得具有上述特定的拉伸特性的半導體用黏著膜5。高分子量成分較好的是熱塑性樹脂。
構成半導體用黏著膜的高分子量成分較好的是具有小於等於60℃的玻璃(glass)轉移溫度(Tg)。另外，較好的是具有大於等於300℃的耐熱性的高分子量成分。適宜的高分子量成分的具體例可舉出：聚醯亞胺(polyimide)樹脂、聚醯胺醯亞胺(polyamide-imide)樹脂、苯氧(phenoxy)樹脂、丙烯酸系樹脂(acrylic resin)、聚醯胺(polyamide)樹脂以及胺基甲酸酯(urethane)樹脂。這些高分子量成分可使用1種或者將多種組合使用。這些之中，特別好的是聚醯亞胺樹脂。藉由使用聚醯亞胺樹脂，可一邊將填料的含量維持在一定程度的較小值，一邊容易地對半導體用黏著膜5賦予如上所述的拉伸特性。
熱硬化性成分是藉由加熱發生交聯而可形成硬化物的成分，例如，熱硬化性成分是由熱硬化性樹脂及其硬化劑所構成。熱硬化性樹脂可使用先前公知的熱硬化性樹脂，並無特別限定，其中就作為半導體周邊材料的方便性(容易獲得高純度品、品種多、易控制反應性)的方面而言，較好的是環氧樹脂、以及1分子中具有至少2個熱硬化性醯亞胺基的醯亞胺化合物。環氧樹脂通常與環氧樹脂硬化劑併用。
環氧樹脂較好的是具有大於等於2個環氧基的化合物。就硬化性或硬化物特性的方面而言，較好的是苯酚(phenol)的縮水甘油醚(glycidyl ether)型環氧樹脂。苯酚的縮水甘油醚型環氧樹脂例如可舉出：雙酚(bisphenol)A、雙酚AD、雙酚S、雙酚F或者鹵(halogen)化雙酚A與表氯醇(epichlorohydrin)的縮合物、苯酚酚醛清漆(phenol novolac)樹脂的縮水甘油醚、甲酚酚醛清漆(cresol novolac)樹脂的縮水甘油醚、以及雙酚A酚醛清漆樹脂的縮水甘油醚。就硬化物的交聯密度高，且可提高膜加熱時的黏著強度的方面而言，這些之中，較好的是酚醛清漆型環氧樹脂(甲酚酚醛清漆樹脂的縮水甘油醚以及苯酚酚醛清漆樹脂的縮水甘油醚等)。這些環氧樹脂可單獨使用或者將大於等於二種加以組合而使用。
環氧樹脂硬化劑例如可舉出：酚系化合物、脂肪族胺(amine)、脂環族胺、芳香族聚胺(polyamine)、聚醯胺、脂肪族酸酐、脂環族酸酐、芳香族酸酐、雙氰胺(dicyandiamide)、有機酸二醯肼(dihydrazide)、三氟化硼胺錯合物、咪唑(imidazole)類、以及三級胺。這些硬化劑中較好的是酚系化合物，其中特別好的是具有大於等於2個酚性羥基的酚系化合物。更具體而言，較好的是萘酚酚醛清漆樹脂(naphthol novolac resin)以及三苯酚酚醛清漆樹脂。若將這些酚系化合物用作環氧樹脂硬化劑，則可有效減少用以封裝(package)組裝的加熱時晶片表面及裝置的污染、或成為臭氣原因的逸氣的發生。
藉由調整填料的含量，可控制半導體用黏著膜的拉伸特性。若增加填料的含量，則存在拉伸斷裂伸長率變小的傾向、以及拉伸斷裂伸長率相對於最大負荷時的伸長率的比率變小的傾向。另外，藉由使用適量的填料，亦可獲得提高操作性、提高導熱性、調整熔融黏度、賦予觸變性(thixotropic)等效果。
就實現上述目的之觀點而言，填料較好的是無機填料。更具體而言，較好的是含有選自由氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁(alumina)、氮化鋁、硼酸鋁晶鬚(aluminum borate whisker)、氮化硼、結晶性二氧化矽(silica)、非晶性二氧化矽以及銻氧化物所組成族群中的至少1種無機材料的無機填料。為了提高導熱性，這些無機填料中較好的是氧化鋁、氮化鋁、氮化硼、結晶性二氧化矽以及非晶性二氧化矽。為了調整熔融黏度或賦予觸變性，較好的是氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、結晶性二氧化矽以及非晶性二氧化矽。另外，為了提高耐濕性，較好的是氧化鋁、二氧化矽、氫氧化鋁以及銻氧化物。亦可將多種填料混合使用。
若填料的含量增加，則拉伸斷裂伸長率變小並且彈性率增加，從而存在斷裂強度上升的傾向，另一方面，由於黏著性下降而存在抗回焊龜裂性(reflow crack resistance)下降的傾向。特別是有在如有機基板的表面上形成有凹凸的被黏附體與半導體晶片間在回焊時易發生破壞的傾向。另外，若填料的含量增加，則亦有對高度加速壽命試驗(HAST，Highly Accelerated Stress Test)等高溫高濕環境下的可靠性試驗的耐性下降的傾向。若填料的含量進一步增加，則存在可將半導體用黏著膜貼附於半導體晶圓上的溫度亦上升的傾向。鑒於如上所述的情況，填料的含量相對於半導體用黏著膜的總質量，較好的是小於30wt%，更好的是小於25wt%，尤其好的是小於20wt%。
較好的是可在小於等於100℃的溫度下將半導體用黏著膜5貼附於作為被黏附體的半導體晶圓上。在此，將保持於特定溫度的半導體用黏著膜貼附於半導體晶圓上時，若在半導體用黏著膜與半導體晶圓的界面上的剝離(peel)強度大於等於20N/m，則判斷可貼附於半導體晶圓上。例如，使用設定為小於等於100℃的溫度的加熱輥貼合機(hot roll laminator)將半導體用黏著膜貼附於半導體晶圓上。在25℃的環境中，在拉伸角度90°、拉伸速度50mm/min的條件下進行剝離強度的測定。例如，藉由減小填料的含量或者使用具有較低Tg的熱塑性樹脂，而可在小於等於100℃的溫度下獲得可貼附於半導體晶圓上的半導體用黏著膜。半導體用黏著膜5可貼附於半導體晶圓上的溫度，更好的是小於等於95℃，尤其好的是小於等於90℃。在考慮到背面研磨膠帶的耐熱性的情況下，較好的是可在小於等於80℃的溫度下將半導體用黏著膜5貼附於作為被黏附體的半導體晶圓上。
半導體用黏著膜5較好的是，具有將半導體晶片搭載於半導體晶片搭載用支撐構件上時所要求的耐熱性及耐濕性。因此，較好的是通過(pass)抗回焊龜裂性試驗。可將黏著強度作為指標來評價半導體用黏著膜的抗回焊龜裂性。為了獲得良好的抗回焊龜裂性，在以4×2mm見方的黏著面積將半導體用黏著膜黏著於半導體晶圓上時，剝離強度在初始較好的是大於等於1.0kg/cm，在85℃/85%環境中放置48小時後較好的是大於等於0.5kg/cm。初始剝離強度更好的是大於等於1.3kg/cm，尤其好的是1.5kg/cm。在85℃/85%環境中放置48小時後的剝離強度，更好的是大於等於0.7kg/cm，尤其好的是大於等於0.8kg/cm。
半導體用黏著膜5可藉由以下方法而獲得：例如將含有熱塑性樹脂等高分子量成分、熱硬化性成分、填料以及將這些成分溶解或分散的有機溶劑的塗佈液塗佈於基材膜上，再利用加熱將有機溶劑自基材膜上的塗佈液中除去。
有機溶劑若可將材料均勻地溶解或分散則無限定，例如可舉出：二甲基甲醯胺(dimethylformamide)、二甲基乙醯胺、N-甲基吡咯烷酮(methylpyrrolidone)、二甲亞碸(dimethyl sulfoxide)、二乙二醇二甲醚(diethylene glycol dimethyl ether)、甲苯(toluene)、苯(benzene)、二甲苯(xylene)、甲基乙基酮(methyl ethyl ketone)、四氫呋喃(tetrahydrofuran)、乙基溶纖劑(ethyl cellosolve)、乙基溶纖劑乙酸酯、丁基溶纖劑、二氧陸圜(dioxane)、環己酮(cyclohexanone)以及乙酸乙酯(ethyl acetate)。這些有機溶劑可單獨使用或者將大於等於二種加以組合而使用。
基材膜若可耐受用以除去有機溶劑的加熱則無特別限定。基材膜的例子可舉出：聚酯膜(polyester film)、聚丙烯膜(polypropylene film)、聚對苯二甲酸乙二酯膜、聚醯亞胺膜、聚醚醯亞胺膜、聚醚萘二甲酸酯(polyether naphthalate)膜、以及甲基戊烯(methylpentene)膜。亦可將大於等於2種的這些膜加以組合而成的多層膜用作基材膜。可利用聚矽氧(silicone)系、二氧化矽系等脫模劑等對基材膜的表面進行處理。在除去有機溶劑後，不除去基材膜即可直接用作半導體用黏著膜的支撐體。
亦可在與切割保護膠帶貼合而成分複合片的狀態下保存及使用半導體用黏著膜。藉由使用此種複合片，可簡化半導體裝置的製造步驟。
用於本發明的附黏著膜之半導體晶片的製造方法的半導體用黏著膜，可供給來作為具有下述構成的黏晶膜。
(a)依序具備基材、含有熱硬化性樹脂及/或熱塑性樹脂的黏著劑層的黏晶膜。
(b)依序具備基材、黏著劑層、含有熱硬化性樹脂及/或熱塑性樹脂的接著劑層的黏晶膜。
(c)依序具備基材、含有熱硬化性樹脂及/或熱塑性樹脂的黏接著劑層的黏晶膜。
(a)及(b)的黏晶膜中的接著劑層、以及(c)的黏晶膜中的黏接著劑層是上述本發明的半導體用黏著膜。
在使用(a)的黏晶膜時，可藉由以下的任意方法來獲得本發明的積層體。
(1)首先，將上述(a)的黏晶膜的黏著劑層與半導體晶圓相貼合。接著，將黏晶膜的基材剝離。接著，將依序具備黏接劑層及基材的切割保護膠帶構件的黏接劑層、與黏著劑層相貼合。
(2)首先，將上述(a)的黏晶膜的黏著劑層、與依序具備黏接劑層及基材層的切割保護膠帶構件的黏接劑層相貼合。接著，將黏晶膜的基材剝離，將黏著劑層與半導體晶圓相貼合。
在使用(b)的黏晶膜時，可藉由以下方法來獲得本發明的積層體。
(3)將上述(b)的黏晶膜的黏著劑層與半導體晶圓相貼合。在基材以及黏接劑層發揮切割保護膠帶的功能時，可藉此獲得積層體。另外，在將基材剝離後，可將切割保護膠帶貼合於黏接劑層上而獲得積層體。
在使用(c)的黏晶膜時，可藉由以下方法來獲得本發明的積層體。
(4)首先，將上述(c)的黏晶膜的黏接著劑層與半導體晶圓相貼合。在基材發揮切割保護膠帶的功能時，可藉此獲得積層體。另外，在將基材剝離後，可將切割保護膠帶貼合於黏接劑層上而獲得積層體。
另外，如使用上述(c)的黏晶膜的例子所示，本發明可提供一種附黏著膜之半導體晶片的製造方法，其包括下列步驟：準備積層體的步驟，此積層體是依序將半導體晶圓、膜狀黏接著劑以及基材加以積層而成，上述膜狀黏接著劑具有1μm～15μm範圍的厚度且具有小於5%的拉伸斷裂伸長率，此拉伸斷裂伸長率小於最大負荷時的伸長率的110%，並且上述半導體晶圓具有改質部，此改質部是藉由照射雷射光而形成且用來將半導體晶圓分割成多個半導體晶片的；將上述基材朝著多個半導體晶片相互分離的方向進行拉伸，在不分割上述膜狀黏接著劑的情況下將半導體晶圓分割成多個半導體晶片的步驟；以及將多個半導體晶片分別朝著積層體的積層方向拾取，藉此將上述膜狀黏接著劑加以分割而獲得附黏著膜之半導體晶片的步驟。上述基材可使用發揮切割保護膠帶功能的基材。
在本實施形態中，對將本發明的半導體用黏著膜配置於半導體晶圓背面側的情況進行了說明，但本發明的附黏著膜之半導體晶片的製造方法，亦可應用於將半導體晶圓的電路面與半導體用黏著膜加以貼合的方式。
如上所述，藉由本實施形態的方法而獲得的附黏著膜之半導體晶片30，例如可構成如IC(integrated circuit，積體電路)、LSI(large scale integration，大型積體電路)的半導體元件。附黏著膜之半導體晶片30例如經由黏著膜5a而黏著於其他半導體晶片或半導體晶片搭載用支撐構件上。
作為半導體晶片搭載用支撐構件例如可舉出：42合金導線架(alloy lead frame)以及銅導線架等導線架；由環氧樹脂、聚醯亞胺系樹脂以及順丁烯二醯亞胺(maleimide)系樹脂等所形成的樹脂膜；將環氧樹脂、聚醯亞胺系樹脂以及順丁烯二醯亞胺系樹脂等熱硬化性樹脂含浸於玻璃不織布或玻璃織布中再使其硬化而獲得的基板；以及玻璃基板及氧化鋁等陶瓷基板。
圖5是表示藉由此方法所獲得的半導體裝置的一實施形態的截面圖。圖5所示的半導體裝置100包括：附配線的基材(支撐構件)13、經由黏著膜5a而黏著於附配線的基材13上的半導體晶片8。半導體晶片8藉由接線(bonding wire)14而與附配線的基材13的配線相連接。另外，半導體晶片8被埋設有上述構件的密封樹脂層15所密封。
半導體晶片與支撐構件的黏著以及半導體晶片彼此間的黏著，是在例如半導體晶片與支撐構件間或者半導體晶片彼此間挾持有半導體用黏著膜的狀態下，於60℃～300℃下加熱0.1秒～300秒來進行。
在半導體用黏著膜5含有熱硬化性樹脂時，較好的是將黏著後的半導體晶片進行加熱以促進半導體用黏著膜與被黏附體的密著或硬化，從而增加接合部的強度。此時的加熱條件根據黏著膜的組成作適當調整即可，通常是60℃～220℃、0.1分鐘～600分鐘。在進行樹脂密封時，亦可利用密封樹脂的硬化步驟的加熱。
[實施例]
以下，藉由實施例來更詳細地說明本發明。但是，本發明並不限定於這些實施例。
<半導體用黏著膜的製作>
(實施例1)
向具備溫度計、攪拌機及氯化鈣管的500ml四口燒瓶中，加入作為二胺的1,3-雙(3-胺基丙基)四甲基二矽氧烷(0.06mol)、4,9-二氧癸烷-1,12-二胺(0.04mol)，以及作為溶劑的150g的N-甲基-2-吡咯烷酮，並於60℃下進行攪拌、溶解。
在二胺溶解後，各少量添加1,10-(十亞甲基)雙(偏苯三甲酸酯二酐)(0.02mol)及4,4'-氧二鄰苯二甲酸二酐(0.08mol)，並於60℃下反應3小時。隨後，一邊吹入氮(N2 )氣一邊於170℃下加熱，藉由共沸以3小時將反應系統內的水與一部分溶劑一同除去。藉此，獲得聚醯亞胺樹脂的溶液。
向上述所獲得的聚醯亞胺樹脂的N-甲基吡咯烷酮(NMP)溶液(含有100質量份的聚醯亞胺樹脂)中，加入4質量份的甲酚酚醛清漆(cresol novolac)型環氧(epoxy)樹脂(東都化成製造)、2質量份的4,4'-[1-[4-[1-(4-羥基苯基)-1-甲基乙基]苯基]亞乙基]雙酚(本州化學製造)、0.5質量份的四苯基硼酸四苯基鏻(tetraphenylphosphonium tetraphenylborate)(東京化成製造)。接著，相對於總固體成分的重量，而加入12wt%的氮化硼填料(水島合金鐵製造)，相對於總固體成分的重量，而加入3wt%的Aerosil Filler R972(日本Aerosil製造)，進行充分混練，而獲得清漆。
將經調合的清漆塗佈於剝離處理過的聚對苯二甲酸乙二酯膜(帝人杜邦(Teijin DuPont)公司製造，Film A31，厚度50μm)上，並於80℃下加熱30分鐘，接著於120℃下加熱30分鐘，而形成厚度5μm的半導體用黏著膜。
(實施例2)
將以與實施例1同樣的方式獲得的清漆塗佈於剝離處理過的聚對苯二甲酸乙二酯膜(帝人杜邦公司製造，Film A31，厚度50μm)上，並於80℃下加熱30分鐘，接著於120℃下加熱30分鐘，而形成厚度15μm的半導體用黏著膜。
(比較例1)
將以與實施例1同樣的方式獲得的清漆塗佈於剝離處理過的聚對苯二甲酸乙二酯膜(帝人杜邦公司製造，Film A31，厚度50μm)上，並於80℃下加熱30分鐘，接著於120℃下加熱30分鐘，形成厚度25μm的半導體用黏著膜。
(比較例2)
準備DF-402(日立化成工業股份有限公司製造，商品名，厚度15μm)來作為比較例2的半導體用黏著膜。
<黏著膜的評價>
(最大應力、最大負荷伸長率、以及拉伸斷裂伸長率)
使用自B-階段狀態的黏著膜切出的帶狀試驗片(寬度5mm，長度50mm)進行拉伸試驗。根據所獲得的應力一應變曲線，基於下述計算式而求得最大應力、最大負荷伸長率、以及拉伸斷裂伸長率。拉伸試驗是使用拉伸試驗機(SIMADZU製造100N AUTOGRAPH，AGS-100NH)，在25℃的環境中，在試驗開始時的夾盤間距離30mm、拉伸速度5mm/min的條件下進行。
最大應力(Pa)=最大負荷(N)/試樣的截面積(m2 )
最大負荷伸長率(%)=[(最大負荷時的夾盤間長度(mm)-30)/30]×100
拉伸斷裂伸長率(%)=[(斷裂時的夾盤間長度(mm)-30)/30]×100
<附黏著膜之半導體晶片的製作>
準備藉由照射雷射光而在內部形成有改質部的50μm厚的半導體晶圓(材質：單晶矽)與背面研磨膠帶的積層品。另外，形成改質部是為了可將半導體晶圓分割成10mm×10mm的尺寸。
另一方面，分別將實施例及比較例中所製作的半導體用黏著膜剪切成直徑210mm的圓形，使用晶圓貼片機(wafer mounter)「DM-300H」(JCM公司製造，商品名)，在室溫、線壓5kgf、10mm/s的條件下，將所獲得的各半導體用黏著膜貼合於切割保護膠帶(電氣化學工業公司製造，商品名「AD-80H」，厚度80μm)上，而製作半導體用黏著膜與切割保護膠帶的積層品。另外，在此積層品的切割保護膠帶上亦貼附晶圓環。
利用晶圓貼片機「DM-300H」(JCM公司製造，商品名)，在熱板溫度80℃、線壓5kgf、3mm/s的條件下，將上述半導體用黏著膜與切割保護膠帶的積層品貼付於上述所準備的形成有改質部的半導體晶圓的背面，而獲得積層體樣品。另外，在進行貼附前將背面研磨膠帶剝離。
接著，將上述所獲得的積層體試樣設置於可撓性黏晶機(flexible die bonder)「DB-730」(Renesas Eastern Japan Semiconductor公司製造，商品名)上，利用延伸裝置來拉伸切割保護膠帶。延伸速度為10mm/s，延伸量為4mm。接著，對經延伸的積層體試樣，藉由以4.2mm的間隔將9根鎢鋼頂針(ejector needle)(Micromechanics公司製造，SEN-83-05：針徑為0.7mm，頂端為350μm徑的半圓形狀)配置成格子狀的可撓性黏晶機「DB-730」(Renesas Eastern Japan Semiconductor公司製造)的多芯上推夾具，一邊將針上推，一邊利用作為拾取夾頭的橡皮吸嘴(Rubber Tip)(Micromechanics公司製造，商品名：13-087E-33，10mm×10mm)來拾取半導體晶片。此時，將針上推分為2階段來進行，第1階段是在高度300μm、速度89.4mm/s的條件下進行上推，隨後第2階段是在高度1,500μm、速度8.94mm/s的條件下進行上推，在上推後在保持時間(拾取計時器)為500ms的條件下，一邊將針上推一邊拾取半導體晶片。基於下述標準來評價此時的拾取性。
[拾取性]
A：可切斷半導體用黏著膜，可拾取附黏著膜之半導體晶片。
B：無法完全切斷半導體用黏著膜，無法拾取半導體晶片，產生晶片破壞。
如表1所示，可確認：根據具有1μm～15μm範圍的厚度且具有小於5%的拉伸斷裂伸長率、此拉伸斷裂伸長率小於最大負荷時的伸長率的110%的實施例1及實施例2的半導體用黏著膜，藉由上述拾取步驟可分割半導體用黏著膜，並可獲得附黏著膜之半導體晶片。另外，可確認：經分割的黏著膜的毛邊亦非常少，且具有與半導體晶片大致相同的形狀。相對於此，在使用比較例1及比較例2的半導體用黏著膜的情況下，無法藉由上述延伸步驟及拾取步驟將半導體用黏著膜分割。
由以上結果可知，根據使用本發明的半導體用黏著膜的附黏著膜之半導體晶片的製造方法，可獲得貼附有毛邊非常少且形狀與半導體晶片大致相同的黏著膜的附黏著膜之半導體晶片，並可謀求兼具採用隱形切割方式製造半導體裝置時的組裝性與可靠性。
[產業上之可利用性]
根據本發明，可提供一種附黏著膜之半導體晶片的製造方法、適用於此附黏著膜之半導體晶片的製造方法的半導體用黏著膜、以及可兼具組裝性與可靠性的半導體裝置的製造方法，上述附黏著膜之半導體晶片的製造方法可高良率地由半導體晶圓獲得半導體晶片，並且可獲得貼附有毛邊非常少且形狀與半導體晶片大致相同的黏著膜的附黏著膜之半導體晶片。
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
1．．．半導體晶圓
2．．．背面研磨膠帶
3．．．改質部
4．．．雷射光
5．．．半導體用黏著膜
5a．．．黏著膜
6．．．切割保護膠帶
7．．．晶圓環
8．．．半導體晶片
9．．．延伸環
10．．．上推針
11．．．吸附圓頂
12．．．拾取夾頭
13．．．附配線的基材
14．．．接線
15．．．密封樹脂層
20．．．積層體
30．．．附黏著膜之半導體晶片
100．．．半導體裝置
A．．．向上方向
B．．．多個半導體晶片相互分離的方向
C．．．積層體的積層方向
圖1是用以說明實施形態的附黏著膜之半導體晶片的製造方法的示意截面圖。
圖2是用以說明實施形態的附黏著膜之半導體晶片的製造方法的示意截面圖。
圖3是用以說明實施形態的附黏著膜之半導體晶片的製造方法的示意截面圖。
圖4是用以說明實施形態的附黏著膜之半導體晶片的製造方法的示意截面圖。
圖5是表示半導體裝置的一實施形態的截面圖。
5．．．半導體用黏著膜
6．．．切割保護膠帶
7．．．晶圓環
8．．．半導體晶片
9．．．延伸環
A．．．向上方向
B．．．多個半導體晶片相互分離的方向

Claims (3)

  1. 一種附黏著膜之半導體晶片的製造方法，包括：準備積層體的步驟，上述積層體是依序將半導體晶圓、半導體用黏著膜以及切割保護膠帶加以積層而成，上述半導體用黏著膜具有1μm~15μm範圍的厚度且具有小於5%的拉伸斷裂伸長率，此拉伸斷裂伸長率小於最大負荷時的伸長率的110%，並且上述半導體晶圓具有改質部，上述改質部是藉由照射雷射光而形成並用來將上述半導體晶圓分割成多個半導體晶片；將上述切割保護膠帶朝著上述多個半導體晶片相互分離的方向進行拉伸，在不分割上述半導體用黏著膜的情況下將上述半導體晶圓分割成上述多個半導體晶片的步驟；以及將上述多個半導體晶片分別朝著上述積層體的積層方向拾取，藉此將上述半導體用黏著膜加以分割而獲得附黏著膜之半導體晶片的步驟。
  2. 一種半導體裝置的製造方法，包括：將藉由如申請專利範圍第1項所述之附黏著膜之半導體晶片的製造方法，黏著於其他半導體晶片或者半導體晶片搭載用支撐構件上的步驟。
  3. 一種半導體用黏著膜，所述半導體用黏著膜具有1μm~15μm範圍的厚度且具有小於5%的拉伸斷裂伸長率，並且此拉伸斷裂伸長率小於最大負荷時的伸長率的110%。
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