JP5353702B2 - 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法 - Google Patents
接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法 Download PDFInfo
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- JP5353702B2 JP5353702B2 JP2009536999A JP2009536999A JP5353702B2 JP 5353702 B2 JP5353702 B2 JP 5353702B2 JP 2009536999 A JP2009536999 A JP 2009536999A JP 2009536999 A JP2009536999 A JP 2009536999A JP 5353702 B2 JP5353702 B2 JP 5353702B2
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- semiconductor
- adhesive film
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Images
Classifications
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0052—Means for supporting or holding work during breaking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Description
引張試験機:SIMADZU製100Nオートグラフ「AGS−100NH」
チャック間距離(試験開始時):30mm
引張速度:5mm/分
最大応力(Pa)=最大荷重(N)/試料の断面積(m2)
最大荷重時の伸度(%)={(最大荷重時のチャック間長さ(mm)−30)/30}×100
引張破断伸度(%)={(破断時のチャック間長さ(mm)−30)/30}×100
(a)基材と、熱硬化性樹脂及び/又は熱可塑性樹脂を含有する接着剤層と、をこの順に備えるダイボンディングフィルム。
(b)基材と、粘着剤層と、熱硬化性樹脂及び/又は熱可塑性樹脂を含有する接着剤層と、をこの順に備えるダイボンディングフィルム。
(c)基材と、熱硬化性樹脂及び/又は熱可塑性樹脂を含有する粘接着剤層と、をこの順に備えるダイボンディングフィルム。
(実施例1)
温度計、攪拌機及び塩化カルシウム管を備えた500mlの四つ口フラスコに、ジアミンとして1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン(0.06mol)、4,9−ジオキサデカン−1,12−ジアミン(0.04mol)及び溶剤としてN−メチル−2−ピロリドン150gを入れ、60℃で攪拌、溶解した。
実施例1と同様にして得たワニスを、剥離処理済みのポリエチレンテレフタレートフィルム(帝人デュポン社製、フィルムA31、厚さ50μm)上に塗布し、80℃で30分、次いで120℃で30分加熱し、厚さ15μmの半導体用接着フィルムを形成した。
実施例1と同様にして得たワニスを、剥離処理済みのポリエチレンテレフタレートフィルム(帝人デュポン社製、フィルムA31、厚さ50μm)上に塗布し、80℃で30分、次いで120℃で30分加熱し、厚さ25μmの半導体用接着フィルムを形成した。
比較例2の半導体用接着フィルムとしてDF−402(日立化成工業社株式会社製、商品名、厚さ15μm)を準備した。
(最大応力、最大荷重伸度、及び引張破断伸度)
Bステージ状態の接着フィルムから切り出された短冊状の試験片(幅5mm、長さ50mm)を用いて引張試験を行った。得られた応力−ひずみ曲線から、下記計算式に基づいて最大応力、最大荷重伸度、及び引張破断伸度を求めた。引張試験は、引張試験機(SIMADZU製100Nオートグラフ、AGS−100NH)を用い、25℃の雰囲気中で、試験開始時のチャック間距離30mm、引張速度5mm/min.の条件で行った。
最大応力(Pa)=最大荷重(N)/試料の断面積(m2)
最大荷重伸度(%)=[(最大荷重におけるチャック間長さ(mm)−30)/30]×100
引張破断伸度(%)=[(破断時のチャック間長さ(mm)−30)/30]×100
レーザー光の照射によって内部に改質部が形成された50μm厚の半導体ウェハ(材質:単結晶シリコン)とバックグラインドテープとの積層品を準備した。なお、改質部は、半導体ウェハを10mm×10mmの大きさに分割できるように形成した。
A:半導体用接着フィルムが切断され、接着フィルム付き半導体チップをピックアップできた。
B:半導体用接着フィルムが完全に切断されず、半導体チップのピックアップができず、チップ割れが生じた。
Claims (3)
- 半導体ウェハ、半導体用接着フィルム及びダイシングテープがこの順で積層され、前記半導体用接着フィルムが1〜15μmの範囲の厚みを有し且つ5%未満の引張破断伸度を有し該引張破断伸度が最大荷重時の伸度の110%未満であり、前記半導体ウェハがレーザー光の照射によって形成された前記半導体ウェハを複数の半導体チップに分割するための改質部を有する、積層体を準備する工程と、
前記ダイシングテープを前記複数の半導体チップが互いに離れる方向に引き伸ばして前記半導体用接着フィルムは分割せずに前記半導体ウェハを前記複数の半導体チップに分割する工程と、
前記複数の半導体チップをそれぞれ前記積層体の積層方向にピックアップすることによって前記半導体チップのピックアップで得られるせん断力を利用して前記半導体用接着フィルムを分割して接着フィルム付き半導体チップを得る工程と、
を備える接着フィルム付き半導体チップの製造方法。 - 請求項1に記載の製造方法により得られた接着フィルム付き半導体チップを、他の半導体チップ又は半導体チップ搭載用支持部材に接着する工程、を備える半導体装置の製造方法。
- 1〜15μmの範囲の厚みを有し且つ5%未満の引張破断伸度を有し該引張破断伸度が最大荷重時の伸度の110%未満である、請求項1に記載の製造方法に用いるための半導体用接着フィルム。
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JP2009536999A JP5353702B2 (ja) | 2007-10-09 | 2008-10-07 | 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法 |
PCT/JP2008/068236 WO2009048060A1 (ja) | 2007-10-09 | 2008-10-07 | 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法 |
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EP (1) | EP2200075A4 (ja) |
JP (2) | JP5353702B2 (ja) |
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US8071465B2 (en) | 2011-12-06 |
TW200919575A (en) | 2009-05-01 |
TWI473151B (zh) | 2015-02-11 |
KR20100065185A (ko) | 2010-06-15 |
EP2200075A4 (en) | 2011-12-07 |
MY151354A (en) | 2014-05-15 |
CN102361016A (zh) | 2012-02-22 |
JP2013179316A (ja) | 2013-09-09 |
KR20120002556A (ko) | 2012-01-05 |
JPWO2009048060A1 (ja) | 2011-02-17 |
CN101821833A (zh) | 2010-09-01 |
EP2200075A1 (en) | 2010-06-23 |
US20110318879A1 (en) | 2011-12-29 |
CN101821833B (zh) | 2012-04-04 |
US20100267199A1 (en) | 2010-10-21 |
WO2009048060A1 (ja) | 2009-04-16 |
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