WO2009048060A1 - 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法 - Google Patents

接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法 Download PDF

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Publication number
WO2009048060A1
WO2009048060A1 PCT/JP2008/068236 JP2008068236W WO2009048060A1 WO 2009048060 A1 WO2009048060 A1 WO 2009048060A1 JP 2008068236 W JP2008068236 W JP 2008068236W WO 2009048060 A1 WO2009048060 A1 WO 2009048060A1
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WIPO (PCT)
Prior art keywords
adhesive film
semiconductor
dividing
producing semiconductor
producing
Prior art date
Application number
PCT/JP2008/068236
Other languages
English (en)
French (fr)
Inventor
Keiichi Hatakeyama
Yuuki Nakamura
Original Assignee
Hitachi Chemical Company, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Company, Ltd. filed Critical Hitachi Chemical Company, Ltd.
Priority to US12/682,256 priority Critical patent/US8071465B2/en
Priority to EP08837801A priority patent/EP2200075A4/en
Priority to CN2008801108124A priority patent/CN101821833B/zh
Priority to JP2009536999A priority patent/JP5353702B2/ja
Publication of WO2009048060A1 publication Critical patent/WO2009048060A1/ja
Priority to US13/228,615 priority patent/US20110318879A1/en

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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  • Die Bonding (AREA)
  • Dicing (AREA)
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Abstract

本発明の接着フィルム付き半導体チップの製造方法は、半導体ウェハ、半導体用接着フィルム及びダイシングテープがこの順で積層され、半導体用接着フィルムが１～１５μｍの範囲の厚みを有し且つ５％未満の引張破断伸度を有し該引張破断伸度が最大荷重時の伸度の１１０％未満であり、半導体ウェハがレーザー光の照射によって形成された半導体ウェハを複数の半導体チップに分割するための改質部を有する積層体を準備する工程と、ダイシングテープを複数の半導体チップが互いに離れる方向に引き伸ばして半導体用接着フィルムは分割せずに半導体ウェハを複数の半導体チップに分割する工程と、複数の半導体チップをそれぞれ積層体の積層方向にピックアップすることによって半導体用接着フィルムを分割して接着フィルム付き半導体チップを得る工程とを備える。
PCT/JP2008/068236 2007-10-09 2008-10-07 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法 WO2009048060A1 (ja)

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US12/682,256 US8071465B2 (en) 2007-10-09 2008-10-07 Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
EP08837801A EP2200075A4 (en) 2007-10-09 2008-10-07 METHOD FOR PRODUCING A SEMICONDUCTOR CHIP WITH A LONG-TERM FILM, A LONG-TERM FOR A SEMICONDUCTOR USED IN THE PROCESS, AND METHOD FOR PRODUCING A SEMICONDUCTOR CONSTRUCTION ELEMENT
CN2008801108124A CN101821833B (zh) 2007-10-09 2008-10-07 半导体用粘接膜、以及半导体芯片、半导体装置的制造方法
JP2009536999A JP5353702B2 (ja) 2007-10-09 2008-10-07 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法
US13/228,615 US20110318879A1 (en) 2007-10-09 2011-09-09 Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device

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JP7286247B2 (ja) * 2019-06-07 2023-06-05 株式会社ディスコ ウェーハの加工方法
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JP7383338B2 (ja) * 2019-10-10 2023-11-20 株式会社ディスコ ウェーハの加工方法
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US20110318879A1 (en) 2011-12-29
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KR20100065185A (ko) 2010-06-15

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