WO2009048060A1 - 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法 - Google Patents
接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法 Download PDFInfo
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- WO2009048060A1 WO2009048060A1 PCT/JP2008/068236 JP2008068236W WO2009048060A1 WO 2009048060 A1 WO2009048060 A1 WO 2009048060A1 JP 2008068236 W JP2008068236 W JP 2008068236W WO 2009048060 A1 WO2009048060 A1 WO 2009048060A1
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- WIPO (PCT)
- Prior art keywords
- adhesive film
- semiconductor
- dividing
- producing semiconductor
- producing
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title abstract 18
- 239000002313 adhesive film Substances 0.000 title abstract 8
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
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- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10156—Shape being other than a cuboid at the periphery
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- H01L2924/11—Device type
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- H01L2924/12041—LED
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- H01L2924/11—Device type
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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- H—ELECTRICITY
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Adhesive Tapes (AREA)
- Die Bonding (AREA)
- Dicing (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/682,256 US8071465B2 (en) | 2007-10-09 | 2008-10-07 | Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device |
EP08837801A EP2200075A4 (en) | 2007-10-09 | 2008-10-07 | METHOD FOR PRODUCING A SEMICONDUCTOR CHIP WITH A LONG-TERM FILM, A LONG-TERM FOR A SEMICONDUCTOR USED IN THE PROCESS, AND METHOD FOR PRODUCING A SEMICONDUCTOR CONSTRUCTION ELEMENT |
CN2008801108124A CN101821833B (zh) | 2007-10-09 | 2008-10-07 | 半导体用粘接膜、以及半导体芯片、半导体装置的制造方法 |
JP2009536999A JP5353702B2 (ja) | 2007-10-09 | 2008-10-07 | 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法 |
US13/228,615 US20110318879A1 (en) | 2007-10-09 | 2011-09-09 | Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007263346 | 2007-10-09 | ||
JP2007-263346 | 2007-10-09 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/228,615 Division US20110318879A1 (en) | 2007-10-09 | 2011-09-09 | Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device |
Publications (1)
Publication Number | Publication Date |
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WO2009048060A1 true WO2009048060A1 (ja) | 2009-04-16 |
Family
ID=40549204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2008/068236 WO2009048060A1 (ja) | 2007-10-09 | 2008-10-07 | 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法 |
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US (2) | US8071465B2 (ja) |
EP (1) | EP2200075A4 (ja) |
JP (2) | JP5353702B2 (ja) |
KR (2) | KR20120002556A (ja) |
CN (2) | CN102361016A (ja) |
MY (1) | MY151354A (ja) |
TW (1) | TWI473151B (ja) |
WO (1) | WO2009048060A1 (ja) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
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US8198176B2 (en) * | 2007-10-09 | 2012-06-12 | Hitachi Chemical Company, Ltd. | Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device |
MY151354A (en) * | 2007-10-09 | 2014-05-15 | Hitachi Chemical Co Ltd | Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device |
DE102008001952A1 (de) * | 2008-05-23 | 2009-11-26 | Robert Bosch Gmbh | Verfahren zur Herstellung von vereinzelten, auf einem Siliziumsubstrat angeordneten mikromechanischen Bauteilen und hieraus hergestellte Bauteile |
JP2011077429A (ja) * | 2009-10-01 | 2011-04-14 | Disco Abrasive Syst Ltd | ワーク分割方法 |
JP2011216529A (ja) * | 2010-03-31 | 2011-10-27 | Furukawa Electric Co Ltd:The | 半導体装置の製造方法 |
JP5419226B2 (ja) * | 2010-07-29 | 2014-02-19 | 日東電工株式会社 | フリップチップ型半導体裏面用フィルム及びその用途 |
JP5580701B2 (ja) * | 2010-09-13 | 2014-08-27 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
CN103299416A (zh) * | 2011-01-17 | 2013-09-11 | Ev集团E·索尔纳有限责任公司 | 用于从载体基质剥离产品基质的方法 |
US9559004B2 (en) | 2011-05-12 | 2017-01-31 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of singulating thin semiconductor wafer on carrier along modified region within non-active region formed by irradiating energy |
US8853072B2 (en) * | 2011-06-06 | 2014-10-07 | Micron Technology, Inc. | Methods of forming through-substrate interconnects |
KR101312937B1 (ko) * | 2011-10-19 | 2013-10-01 | 한국기계연구원 | 웨이퍼 다이싱용 레이저 개질 장치 및 웨이퍼 다이싱 방법 |
JP6128837B2 (ja) * | 2012-02-21 | 2017-05-17 | 東京応化工業株式会社 | 接着剤組成物の製造方法、接着剤組成物及び接着フィルム |
US8936969B2 (en) | 2012-03-21 | 2015-01-20 | Stats Chippac, Ltd. | Semiconductor device and method of singulating semiconductor wafer along modified region within non-active region formed by irradiating energy through mounting tape |
US9136173B2 (en) * | 2012-11-07 | 2015-09-15 | Semiconductor Components Industries, Llc | Singulation method for semiconductor die having a layer of material along one major surface |
US9484260B2 (en) * | 2012-11-07 | 2016-11-01 | Semiconductor Components Industries, Llc | Heated carrier substrate semiconductor die singulation method |
DE102012111358A1 (de) * | 2012-11-23 | 2014-05-28 | Osram Opto Semiconductors Gmbh | Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips und Halbleiterchip |
US20170213765A1 (en) * | 2014-05-23 | 2017-07-27 | Hitachi Chemical Company, Ltd. | Die bonding/dicing sheet |
CN104409383B (zh) * | 2014-10-20 | 2017-08-01 | 上海技美电子科技有限公司 | 晶圆转移装置 |
JP6805233B2 (ja) * | 2016-03-10 | 2020-12-23 | リンテック株式会社 | ダイシングダイボンディングシート、半導体チップの製造方法及び半導体装置の製造方法 |
KR20180125977A (ko) * | 2016-03-30 | 2018-11-26 | 린텍 가부시키가이샤 | 필름상 접착제, 반도체 가공용 시트 및 반도체 장치의 제조 방법 |
JP2018181929A (ja) * | 2017-04-05 | 2018-11-15 | 株式会社ディスコ | 加工方法 |
US10373869B2 (en) | 2017-05-24 | 2019-08-06 | Semiconductor Components Industries, Llc | Method of separating a back layer on a substrate using exposure to reduced temperature and related apparatus |
JP6876540B2 (ja) * | 2017-06-27 | 2021-05-26 | 日東電工株式会社 | ダイシングテープ一体型接着性シート |
JP6967411B2 (ja) * | 2017-09-19 | 2021-11-17 | ファスフォードテクノロジ株式会社 | 半導体製造装置、半導体装置の製造方法およびコレット |
JP6977588B2 (ja) * | 2018-01-30 | 2021-12-08 | 昭和電工マテリアルズ株式会社 | 半導体装置の製造方法及び接着フィルム |
KR102563929B1 (ko) * | 2018-03-09 | 2023-08-04 | 삼성전자주식회사 | 반도체 다이들의 개별화 방법 및 반도체 패키지의 제조 방법 |
JP7143156B2 (ja) * | 2018-04-27 | 2022-09-28 | 日東電工株式会社 | 半導体装置製造方法 |
US20190363020A1 (en) * | 2018-05-24 | 2019-11-28 | Semiconductor Components Industries, Llc | Die singulation systems and methods |
JP2020061398A (ja) * | 2018-10-05 | 2020-04-16 | 株式会社ディスコ | ウエーハの加工方法 |
JP7330616B2 (ja) * | 2019-05-10 | 2023-08-22 | 株式会社ディスコ | ウェーハの加工方法 |
JP7330615B2 (ja) * | 2019-05-10 | 2023-08-22 | 株式会社ディスコ | ウェーハの加工方法 |
JP7286247B2 (ja) * | 2019-06-07 | 2023-06-05 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021015823A (ja) * | 2019-07-10 | 2021-02-12 | 株式会社ディスコ | ウェーハの加工方法 |
JP7383338B2 (ja) * | 2019-10-10 | 2023-11-20 | 株式会社ディスコ | ウェーハの加工方法 |
JP7387228B2 (ja) * | 2019-10-17 | 2023-11-28 | 株式会社ディスコ | ウェーハの加工方法 |
JP2022054894A (ja) | 2020-09-28 | 2022-04-07 | 株式会社ディスコ | ウェーハの加工方法 |
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-
2008
- 2008-10-07 MY MYPI20101577 patent/MY151354A/en unknown
- 2008-10-07 CN CN201110314139XA patent/CN102361016A/zh active Pending
- 2008-10-07 EP EP08837801A patent/EP2200075A4/en not_active Withdrawn
- 2008-10-07 CN CN2008801108124A patent/CN101821833B/zh active Active
- 2008-10-07 JP JP2009536999A patent/JP5353702B2/ja active Active
- 2008-10-07 WO PCT/JP2008/068236 patent/WO2009048060A1/ja active Application Filing
- 2008-10-07 KR KR1020117029600A patent/KR20120002556A/ko not_active Application Discontinuation
- 2008-10-07 US US12/682,256 patent/US8071465B2/en active Active
- 2008-10-07 KR KR1020107007639A patent/KR20100065185A/ko active Search and Examination
- 2008-10-09 TW TW97138933A patent/TWI473151B/zh active
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2011
- 2011-09-09 US US13/228,615 patent/US20110318879A1/en not_active Abandoned
-
2013
- 2013-04-08 JP JP2013080654A patent/JP2013179316A/ja active Pending
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JP2003338467A (ja) | 2002-03-12 | 2003-11-28 | Hamamatsu Photonics Kk | 半導体基板の切断方法 |
WO2004109786A1 (ja) * | 2003-06-06 | 2004-12-16 | Hitachi Chemical Co., Ltd. | 接着シート、ダイシングテープ一体型接着シート、及び半導体装置の製造方法 |
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WO2008126718A1 (ja) * | 2007-04-05 | 2008-10-23 | Hitachi Chemical Company, Ltd. | 半導体チップの製造方法、並びに半導体用接着フィルム及びこれを用いた複合シート |
Non-Patent Citations (1)
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See also references of EP2200075A4 |
Also Published As
Publication number | Publication date |
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CN101821833A (zh) | 2010-09-01 |
MY151354A (en) | 2014-05-15 |
KR20120002556A (ko) | 2012-01-05 |
EP2200075A1 (en) | 2010-06-23 |
US20110318879A1 (en) | 2011-12-29 |
US8071465B2 (en) | 2011-12-06 |
JP2013179316A (ja) | 2013-09-09 |
EP2200075A4 (en) | 2011-12-07 |
JPWO2009048060A1 (ja) | 2011-02-17 |
TWI473151B (zh) | 2015-02-11 |
TW200919575A (en) | 2009-05-01 |
JP5353702B2 (ja) | 2013-11-27 |
CN102361016A (zh) | 2012-02-22 |
US20100267199A1 (en) | 2010-10-21 |
CN101821833B (zh) | 2012-04-04 |
KR20100065185A (ko) | 2010-06-15 |
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