CN103299416A - 用于从载体基质剥离产品基质的方法 - Google Patents
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract
本发明涉及一种用于从通过连接层(6)与产品基质(7)相连接的载体基质(3)剥离产品基质(7)的方法,其带有以下步骤、尤其以下过程:将溶剂(9)施加到载体基质(3)的背对连接层(6)的平侧(3o)上、溶剂(9)的流通部分流过载体基质(3)、主要通过流通部分至少部分地分离连接层(6)以及从载体基质(3)剥离产品基质(7)。
Description
技术领域
本发明涉及一种根据权利要求1的用于从载体基质剥离产品基质(Produktsubstrat)的方法。
背景技术
产品基质的背面变薄(Rueckduennen)在半导体工业中经常是必需的且可机械地和/或化学地实现。为了背面变薄,通常将产品基质暂时固定到载体上,其中,对于该固定存在不同的方法。例如使用箔、玻璃基质或硅晶片作为载体材料。
根据所使用的载体材料和在载体与产品基质之间所使用的连接层已知用于溶解或破坏连接层的不同方法,例如应用UV光、激光束、温度影响或溶剂。
剥离越来越成为最关键的过程步骤中的一个,因为带有几μm的基质厚度的较薄的基质在剥离/取下时容易破裂或由于对于剥离的过程必要的力而遭受损坏。
此外,较薄的基质几乎不具有直至没有形状稳定性且典型地在没有支撑材料的情况下卷起。因此在操纵背面变薄的晶片期间,晶片的固定和支持实际上是不可避免的。
剥离尤其在使用溶剂以分离连接层时经常非常费时。
发明内容
因此本发明的目的是说明一种装置和一种方法,以便尽可能无破坏地、快速地且以简单方式从载体分离产品基质。
该目的利用权利要求1的特征来实现。
本发明的有利的改进方案在从属权利要求中来说明。由在说明书、权利要求和/或附图中所说明的至少两个特征构成的所有组合也属于本发明的范畴。对于所说明的值范围,处在所提及的界限内的值也应作为极限值公开且可以以任意的组合要求保护。
本发明基于至少不仅从连接层的侧向的周缘这里溶解连接层、而是尽可能大面积地在朝向载体基质的粘合面处分离连接层的构思,亦即尤其由空穴产生器件(Kavitationserzeugnismittel)、优选地与溶剂相接触的超声波发生器来支持。这根据本发明这样来实现,即载体基质被通道贯穿并且/或者使用多孔的载体基质。溶剂由此实际获得与连接层的整面的接触且因此实际可沿着与载体基质的整个接触面整面地侵蚀和溶解连接层。
产品基质意指通常变薄到在0.5μm与250μm之间的厚度的产品基质(例如半导体晶片),其中,该趋势趋向越来越薄的产品基质。
例如使用带有在50μm与5000μm、尤其在500μm与1000μm之间的厚度的载体基质作为载体。
作为连接层可考虑粘合剂、例如可溶解的粘合剂、尤其热塑性塑料,其被整面地施加,其中,在中心的粘合力可通过减小附着的层(例如氟聚合物(Fluorpolymer)、优选特氟龙)来减小。
作为容纳装置,卡盘、尤其旋转式卡盘特别适合用于容纳载体基质,尤其借助于例如在吸道(Saugbahn)、钻孔或吸盘处的负压。备选地,可考虑机械的容纳(例如通过侧向的夹子)。在另一备选的设计方案中,该容纳静电地实现。
在使用膜框架(Filmrahmen)时,剥离器件(Abloesungsmittel)包括装配在膜框架上的膜和容纳膜框架的且力加载的膜框架容纳部。否则,剥离器件包括卡盘,其以拉力、尤其借助于设置在卡盘处的真空轨道加载载体基质。
在本发明的一有利的实施形式中设置成,沿着载体基质均匀分布地分离连接层。连接层的剥离越均匀(尤其通过设置多个通道或通过渗透多孔的载体件基质),可特别小心地将载体基质从产品基质剥离。
根据本发明的另一实施形式有利地设置成,设置有由膜框架和与膜框架相连接的柔性的膜形成的、尤其体积可变的用于容纳溶剂的溶剂容器,在其中溶剂的施加尤其通过溶剂的引入而实现。这里根据本发明全面参考欧洲权利申请EP 10 004 313.2的说明书、附图说明、权利要求和附图且其应相应地视为一起公开。
只要在流通部分(Durchflussanteil)流过和/或连接层分离期间设置有以超声波振动加载溶剂、尤其通过以超声波发生器在载体基质的平侧(Flachseite)处加载,大幅加速根据本发明的方法。通过超声波来加速溶剂的溶剂分子扩散通过载体基质的通道和/或细孔,并且当通过超声波振动来激励该溶解时连接层的溶解也明显更快地实现。对此的原因在于所谓的空穴现象。空穴现象理解成在液体中由于压力波动形成和溶解空腔。这些空腔内爆(implodieren)且由此产生由液体限制的固体的极强的表面损坏。由于空穴现象,至少部分地机械地破坏连接层。该效应在技术上、尤其在航行中通过船的螺旋桨的磨损而已知且任认为是不期望的。因此,本发明通过该事实与文件US 2004/018886 1 A1相区别,即感应的声波不仅更有效地运输分子通过通道,而且附加地空穴现象负责损坏粘合剂。
在此,带有在16kHz与1GHz、尤其在500kHz与1500kHz、优选地在800kHz与1200kHz之间的超声波振动是特别有利的。
在另一有利的实施形式中,溶剂容器构造成盆状,由此可以以最小的溶剂消耗实现产品基质的剥离。
通过基于通过取下载体基质整面地分离连接层实现从载体基质剥离产品基质(也称为松解(Debonding)),实现根据本发明的方法的进一步加速。
附图说明
本发明的另外的优点、特征和细节由优选的实施例的接下来的说明中以及根据附图得出;其中:
图1:显示了根据第一方法变体的在膜框架上的由产品基质、载体基质和连接层构成的基质复合物的示意性的侧视图以及
图2:显示了根据第二方法变体的在膜框架上的由产品基质、载体基质和连接层构成的基质复合物的示意性的侧视图。
在附图中,相同的构件和带有相同功能的构件以相同的附图标记表示。
具体实施方式
在图1中显示了基质复合物11,其由载体基质3(尤其晶片)、产品基质7(尤其结构晶片)和将产品基质7暂时粘结在载体基质3上的连接层6(尤其粘合剂)构成。
根据本发明,以用于分离连接层6的溶剂9加载载体基质3,亦即至少在载体基质3的背对连接层6的平侧3o处,其在绘图平面中布置在上面。因此,溶剂9按照根据图1的实施形式以一薄层放置在载体基质3上,而非较大的量在载体基质3的边缘上移动。而溶剂9在通道5和/或细孔中由于载体基质3的敞开的多孔性而侵入载体基质3中,这在该实施方式中基于重力实现。溶剂9的施加通过未示出的用于引入溶剂9或施加溶剂9的器件、例如与溶剂容器相连接的喷嘴实现。
基质复合物11位于膜框架1的膜2上,其设置为柔性的膜。特别有利的是基质复合物11与环形的膜框架1的同心的取向,从而在基质复合物11与膜框架1之间存在均匀的间距。该间距和膜2的柔性通过膜框架1和基质复合物11的相反的力加载被用于构造溶剂容器12,在其中收集多余的溶剂9。溶剂容器12由此具有盆形。
只要(如在根据图2的实施形式中所示)更多溶剂9被引入溶剂容器12中,基质复合物11完全浸入溶剂9中,从而附加地从连接层6的侧围(Seitenumfang)6s实现连接层6的分离。
因此,溶剂9的流通部分从平侧3o开始直至连接层6流过载体基质3。一旦溶剂9到达连接层6,连接层6的分离开始,而溶剂9的剩余部分保留在载体基质3上。
将超声波发生器10浸入剩余部分中,以便以超声波振动加载溶剂9。超声波振动从剩余部分穿过载体基质经由溶剂的流通部分被传递直到连接层6中,使得不仅溶剂9流经或渗透通过载体基质3而且连接层的分离被强烈加速。
本发明不限于应用带有膜2的膜框架1,而且备选地根据本发明可考虑将基质复合物11浸入带有溶剂的盆中。然而膜框架1的使用是有利的,因为膜框架1不仅可被用于基质复合物11或产品基质7的预处理和再处理、尤其作为切割框架,而且同时还用作根据本发明的溶剂容器。
通道5优选地构造为沿着载体基质3的平侧3o均匀地分布的、尤其横向于平侧3o优选地直线地延伸的通道5。
通过在载体基质3的平侧3o处、即在绘图平面中向上施加拉力(尤其利用用于晶片的容纳装置、例如卡盘),在连接层6至少部分分离之后实现从载体基质3剥离产品基质7。通过在膜框架1处或在产品基质7处施加相应的反力,由于膜2的柔性实现从载体基质3小心地剥离产品基质7,亦即同心地从基质复合物11的侧缘开始。产品基质7在它的背对连接层6的平侧7o处固定在尤其设计为粘合膜的膜2上。在剥离之后,仅产品基质7保留在膜框架1的膜2上,从而可将产品基质7与膜框架1一起引导至进一步的加工步骤。
附图标记清单
1 膜框架
2 膜
3 载体基质
3o 平侧
5 通道
6 连接层
6s 侧围
7 产品基质
7o 平侧
9 溶剂
10 超声波发生器
11 基质复合物
12 溶剂容器。
Claims (7)
1. 一种用于从通过连接层(6)与产品基质(7)相连接的载体基质(3)剥离所述产品基质(7)的方法,其带有以下步骤、尤其以下过程:
- 将溶剂(9)施加到所述载体基质(3)的背对所述连接层(6)的平侧(3o)上,
- 所述溶剂(9)的流通部分流过所述载体基质(3),
- 尤其主要通过所述流通部分至少部分地分离所述连接层(6)以及
- 从所述载体基质(3)剥离所述产品基质(7)。
2. 根据权利要求1所述的方法,其特征在于,实现了流过所述载体基质(3)的通道(5)。
3. 根据权利要求1所述的方法,其特征在于,实现了借助于渗透流过所述载体基质(3)的细孔。
4. 根据权利要求1所述的方法,其特征在于,沿着所述载体基质(2)均匀分布地分离所述连接层(6)。
5. 根据权利要求1所述的方法,其特征在于,设置有由膜框架(1)和与所述膜框架(1)相连接的柔性的膜(3)形成的、尤其体积可变的用于容纳所述溶剂(9)的溶剂容器(12),在其中所述溶剂(9)的施加尤其通过所述溶剂(9)的引入而实现。
6. 根据权利要求1所述的方法,其特征在于,在所述流通部分流过和/或所述连接层(6)分离期间设置有以超声波振动加载所述溶剂(9),尤其通过以超声波发生器(10)在所述载体基质(2)的平侧(3o)处加载。
7. 根据权利要求6所述的方法,其特征在于,所述超声波振动具有在16kHz与1GHz之间、尤其在500kHz与1500kHz之间、优选地在800kHz与1200kHz之间的频率。
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Cited By (2)
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Families Citing this family (4)
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JP6858586B2 (ja) * | 2017-02-16 | 2021-04-14 | 株式会社ディスコ | ウエーハ生成方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04206725A (ja) * | 1990-11-30 | 1992-07-28 | Toshiba Corp | 半導体ウェーハの洗浄方法及び装置 |
US6114641A (en) | 1998-05-29 | 2000-09-05 | General Electric Company | Rotary contact assembly for high ampere-rated circuit breakers |
JP2001185519A (ja) * | 1999-12-24 | 2001-07-06 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP4364535B2 (ja) | 2003-03-27 | 2009-11-18 | シャープ株式会社 | 半導体装置の製造方法 |
US20060207967A1 (en) * | 2003-07-03 | 2006-09-21 | Bocko Peter L | Porous processing carrier for flexible substrates |
JP2006135272A (ja) * | 2003-12-01 | 2006-05-25 | Tokyo Ohka Kogyo Co Ltd | 基板のサポートプレート及びサポートプレートの剥離方法 |
JP2005222989A (ja) * | 2004-02-03 | 2005-08-18 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
MY151354A (en) * | 2007-10-09 | 2014-05-15 | Hitachi Chemical Co Ltd | Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device |
JP5291392B2 (ja) * | 2008-06-18 | 2013-09-18 | 東京応化工業株式会社 | 支持板剥離装置 |
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2011
- 2011-01-17 SG SG2013054309A patent/SG191990A1/en unknown
- 2011-01-17 EP EP11700807.8A patent/EP2666185A1/de not_active Withdrawn
- 2011-01-17 US US13/978,159 patent/US20130288454A1/en not_active Abandoned
- 2011-01-17 JP JP2013548744A patent/JP2014504024A/ja active Pending
- 2011-01-17 WO PCT/EP2011/000173 patent/WO2012097830A1/de active Application Filing
- 2011-01-17 CN CN201180065137XA patent/CN103299416A/zh active Pending
- 2011-01-17 KR KR1020137018405A patent/KR20140033327A/ko not_active Application Discontinuation
- 2011-11-30 TW TW100144024A patent/TW201246417A/zh unknown
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104640381A (zh) * | 2013-11-14 | 2015-05-20 | 胜华科技股份有限公司 | 电子元件半成品、电子元件及其制造方法 |
CN106459676A (zh) * | 2014-06-26 | 2017-02-22 | Ev 集团 E·索尔纳有限责任公司 | 用于以通过靠近基质来分布连接材料从而结合基质的方法 |
CN106459676B (zh) * | 2014-06-26 | 2020-01-10 | Ev 集团 E·索尔纳有限责任公司 | 用于以通过靠近基质来分布连接材料从而结合基质的方法 |
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US20130288454A1 (en) | 2013-10-31 |
TW201246417A (en) | 2012-11-16 |
SG191990A1 (en) | 2013-08-30 |
JP2014504024A (ja) | 2014-02-13 |
EP2666185A1 (de) | 2013-11-27 |
KR20140033327A (ko) | 2014-03-18 |
WO2012097830A1 (de) | 2012-07-26 |
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