TW201246417A - Method for stripping a product substrate from a carrier substrate - Google Patents
Method for stripping a product substrate from a carrier substrate Download PDFInfo
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- TW201246417A TW201246417A TW100144024A TW100144024A TW201246417A TW 201246417 A TW201246417 A TW 201246417A TW 100144024 A TW100144024 A TW 100144024A TW 100144024 A TW100144024 A TW 100144024A TW 201246417 A TW201246417 A TW 201246417A
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- substrate
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- carrier substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
201246417 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種如技術方案1之自載體基板剝除產品 基板之方法。 【先前技術】 產品基板之背面減薄通常係半導體產業中所必需,且可 以機械及/或化學方式進行。爲了背面減薄的目的,產品 基板通常係暫時固定在一載體上,且固定的方法有很多 種。該載體材料係(例如)薄膜、玻璃基板或石夕晶圓。 根據所使用的載體材料及載體與產品基板之間所使用的 互連層’已知許多用於溶解或破壞該互連層的方法,如 (例如)使用uv光、雷射束、温度作用、或溶劑。 由於具有幾微米基板厚度的薄基板在剝除/移除期間容 易斷裂或因剝除過程中必要的力而受損,剝除日益成為最 重要的處理步驟之一。 此外,該等薄基板幾乎不具有任何尺寸穩定性或完全沒 有该特性,且在沒有載體材料的情況下,通常會捲起。因 此,在操作背面減薄晶圓期間,晶圓的固定及支撐係十分 重要。 通常,剝除(尤其在使用溶劑溶解互連層時)係非常耗 時。 【發明内容】 因此,本發明之目標係設計一種裝置及方法,以儘可能 無破壞、迅速及簡單地自載體分離產品基板。 159860.doc 201246417 此目標係藉由如技術方案i之特徵來實現。附屬請求項 提供本發明之有利發展。本說明書 '請求項及/或圖式中 所提供之特徵中之至少兩者之所有組合亦在本發明之範圍 内。在特定的數值範圍下,指示範圍内的數值亦將作為界 限值而揭示且將以任何組合形式經主張。 本發明係基於以下想法:至少不完全自互連層之橫向外 圍邊緣溶解互連層,而是在朝向載體基板之黏合劑表面上 Ο 〇 儘可能大面積地分離互連層,此尤其係藉由^穴產生裝置 (較佳係與溶劑接觸之超音波發射器)支持。如本發明所 述此係藉由通道穿過載體基板及/或使用多孔載體基板 而實現。由此,該溶劑獲得進入互連層的基本上毯覆式入 口 ’且可以毯覆方式基本上沿與载體基板接觸的整個接觸 表面浸蝕並溶解該互連層。 產品基板係通常薄化至厚度為05师至250 _之間之產 品基板(如半導體晶圓),其趨勢係越來越薄之產品基板。 載體係(例如)厚度在50 盥 μ ” 5000 之間,尤其在500 μπι及1 〇〇〇 μηι之間的載體基板。 該互連層可為以毯覆方式 忡疋黏合剤,如可溶性黏合 ’尤屬塑性塑料,且令心點著力可藉由黏性降低層 (如含虱聚合物,較佳係聚四氟乙烯)而減小。 夾盤(尤其係用於容納載體其起从# & m w 的旋轉夹盤)係特別適合 作為接收裝置,尤其係藉由(例如 U ^ ^ m ^ )抽及路徑、孔隙或吸盤 上之負壓。或者,可預期機械 且。力玄,^史k 巧万式,例如藉由橫向夹 具在另一選擇性組態中,容納作田A ^ 、作用係以靜電形式發生。 159860.doc 201246417 當使用薄膜框架時’剝除裝置包括安裝於薄膜框架上之 薄膜及-施加力且容納該薄膜框架之薄膜框架接收器。此 外’該剝除裝置包括夾盤,其尤其藉由提供於該炎盤上之 真空路徑對載體基板施加張力。 、=本發明之-有利實施例中,互連層係沿制基板均句 脫落。互連層的剝除越均勻(尤其藉由提供複數個通道或 藉由滲透多孔載體部份基板),载體基板越可特別小心地 自產品基板剝除。 根據本發明的另一實施例,有利地存在用於儲存溶劑的 溶劑儲集器,該儲集器尤其具有可變容積且係由薄膜框架 及連接至該薄膜框架之可撓性薄膜組成,且其中尤其藉由 輸送溶劑來塗佈溶劑。此處,如本發明所主張,全面參考 歐洲專利申請案EP 10 004 3 13_2之說明書、圖示說明、請 求項及附圖,該案因此應被認為同時經公開。 如果在流動部份的通流及/或互連層的脫落期間,使溶 劑曝露於超音波振動下(尤其係藉由曝露於載體基板之平 坦側面上的超音波發射器),則將極大地加快本發明之方 法。超音波加快溶劑分子擴散通過載體基板之孔隙及/或 通道’且當藉由超音波振動刺激互連層的溶解時,其溶解 作用亦更加快速》此係由於所謂的空穴化作用。空穴化作 用係被定義為由壓力波動所引起之液體中空腔的形成及溶 解。此等空腔向内破裂且因此在經液體圍繞的固體上產生 極強的表面破壞。藉由空穴化作用,該互連層係至少部份 經機械破壞。該效應在工程學中係已知(主要係在航海中 159860.doc 201246417 船螺旋槳之磨損)’且通常係非所欲。因此,本發明由於 以下事實而不同於us 2_/0188861 Αι :所產生之音波不 但更有效率地將分子輸送通過通道,而且另外空穴化作用 造成黏合劑的破壞。 頻率在16他至1他之間,尤其在5〇〇服至15〇〇跑 之間,較佳在800 kHdUOO kHz之間的超音波振動係特 別有利。 在另一有利實施例中,該溶劑儲集器係呈槽型,由此可 〇 以最低的溶劑消耗實現產品基板的剝除。 藉由提起載體基板自載體基板剝除產品基板(亦稱脫 黏其係由於互連層之毯覆式溶解),以進一步加快本發 明之方法。 本發月之其他優點、特徵及細節將自以下較佳示例性實 施例的描述及使用圖式而變得明顯。 、 【實施方式】 具有相同功能的相同組件及部件係以相同的參考數字表 示。 圖1顯不複合基板11,其係由載體基板3(尤其係晶 圓)產时基板7(尤其係結構晶圓)、及暫時將產品基板7黏 合在載體基板3上之互連層6(尤其係黏合劑)所組成。 使本發明所述之載體基板3與用於溶解互連層6之溶劑9 接觸^該接觸係至少在載體基板3之—平坦侧面3。上,該 1面係月向互連層ό且位於圖式平面的頂部。因此,根據 圖中所不的實施例,溶劑9停留在載體基板3上形成薄 159860.doc 201246417 層’且無大量溶劑溢出載體基板3之邊緣。相反地,通道$ 及/或孔隙中的溶劑9因載體基板3之開放多孔性而滲入載 體基板3中;此過程在該實施例中係由於重力作用而發 生。藉由用於提供溶劑9或塗佈溶劑9之未顯示裝置(例如 與溶劑儲集器相連之喷嘴)塗佈溶劑9 ^ 複合基板11係位於薄膜框架1之作為可撓性薄膜提供的 薄膜2上。複合基板η與環形薄膜框架〗的同軸對準係特別 有利,其使得複合基板11與薄膜框架】之間的距離一致。 藉由對薄膜框架1及複合基板Η施加相反的力來利用該距 離及薄膜2的可撓性,以形成收集過量溶劑9之溶劑儲集器 12。因此該溶劑儲集器12係呈槽形。 就將更多的溶劑9供應至溶劑儲集器12中(如根據圖2之 實施例所示)而言,複合基板η係完全浸沒於溶劑9中,以 使互連層6另外自其側邊6S脫落。 因此,溶劑9的通流部份開始自平坦側面3〇流動通過載 體基板3直至到達互連層6。一旦溶劑9到達互連層6,互連 層6便開始脫落,同時溶劑9之剩餘部份留在載體基板3 上。 將超音波發射器10浸沒於溶劑9之剩餘部份中,以使溶 劑9曝露於超音波振動下。該等超音波振動係自該剩餘部 份經由溶劑之通流部份通過載體基板傳導至互連層6中, 從而極大地促進溶劑9通過載體基板3的滲透或流動及該互 連層的脫落。 本發明不限於使用含薄膜2之薄膜框架丨,而是可如本發 159860.doc 201246417 明所述將複合基板u浸入含有溶劑的槽中。缺 膜框架咖,因為如本發明所述,薄膜框架 於複合基板11或產品基板7的預處理及進一步處理(尤其係 作為切割框架),且同時亦可用作溶劑儲集器。 ,通道5較佳係經製造成尤其橫跨平坦側面3〇(較佳呈直線 方式)且沿著載體基板3之平坦側面3〇均勻分佈的通道5。 在互連層6至少部份脫落後,藉由作用於載體基板3之平 t側面3〇至圖式平面之頂部的張力(尤其係利用晶圓接收 〇 裝置(如夾盤)),將產品基板7自載體基板3剝除。藉由對薄 膜框架1或產品基板7施加相應的反力,由於薄膜2的可撓 性,自複合基板11的側邊緣以同軸方式開始,實現將產品 基板7小心地自載體基板3剝除。產品基板7之背向互連層6 之平坦側面7〇係固定在薄膜2上,該薄膜2係尤其製造成黏 合薄膜。剝除之後,只有產品基板7留在薄膜框架丨之薄膜 2上,因而可藉由薄膜框架!將產品基板7傳送至其他加工 步驟。 0 【圖式簡單說明】 圖1顯不根據第一種方法由薄膜框架上的產品基板、载 體基板及互連層組成的複合基板之示意側視圖。 圖2顯示根據第二種方法由薄膜框架上的產品基板、载 體基板及互連層組成的複合基板之示意側視圖。 【主要元件符號說明】 1 薄膜框架 2 薄膜
159860.doc Q 201246417 3 載體基板 3〇 平坦側面 5 通道 6 互連層 6s 側邊 7 產品基板 7o 平坦側面 9 溶劑 10 超音波發射器 11 複合基板 12 溶劑儲集器 159860.doc
Claims (1)
- 201246417 七、申請專利範圍: 1. 一種自載體基板(3)剝除產品基板(7)之方法,其中該載 體基板(3)係藉由互連層(6)與該產品基板(7)相連,該方 法具有以下步驟’尤其係以下順序: . 將溶劑(9)塗佈於背向該互連層(6)之載體基板(3)之一 平坦側面(3〇), 使该溶劑(9)之通流部份流動通過該載體基板(3), 尤其主要藉由該通流部份,使該互連層(6)至少部份脫 〇 落’ 自該載體基板(3)剝除該產品基板(7)。 2. 如請求項1之方法,其中通流係經由該載體基板(3)之通 道(5)而發生。 3. 如喷求項1之方法,其中通流係藉由滲透通過該載體基 板(3)之孔隙而發生。 4. 如吻求項1之方法,其中該互連層係均勻溶解並沿該 載體基板(3)分佈。 〇 5·如β求項1之方法,其中包括一用於儲存溶劑之溶劑 儲集器(12),該儲集器尤其具有可變容積且係由該薄膜 ‘ 忙架(1)及連接至该薄膜框架(1)之可撓性薄膜(2)組成, w 且其中尤其藉由輸送溶劑(9)來塗佈溶劑(9)。 6.如叫求項1之方法,其中在該通流部份的通流及/或該互 連層(6)的脫落期間,使溶劑(9)曝露於超音波振動下, 此尤其係藉由曝露於一位於該載體基板(3)之平坦側面 (3〇)上之超音波發射器(1〇)。 159860.doc 201246417 7.如請求項6之方法,其中該等超音波振動的頻率係在16 kHz至1 GHz之間,尤其在500 kHz至1500 kHz之間,較 佳在800 kHz至1200 kHz之間。 159860.doc
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PCT/EP2011/000173 WO2012097830A1 (de) | 2011-01-17 | 2011-01-17 | Verfahren zum ablösen eines produktsubstrats von einem trägersubstrat |
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TW201246417A true TW201246417A (en) | 2012-11-16 |
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TW100144024A TW201246417A (en) | 2011-01-17 | 2011-11-30 | Method for stripping a product substrate from a carrier substrate |
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US (1) | US20130288454A1 (zh) |
EP (1) | EP2666185A1 (zh) |
JP (1) | JP2014504024A (zh) |
KR (1) | KR20140033327A (zh) |
CN (1) | CN103299416A (zh) |
SG (1) | SG191990A1 (zh) |
TW (1) | TW201246417A (zh) |
WO (1) | WO2012097830A1 (zh) |
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---|---|---|---|---|
US10046550B2 (en) | 2013-08-22 | 2018-08-14 | Massachusetts Institute Of Technology | Carrier-substrate adhesive system |
US9359198B2 (en) * | 2013-08-22 | 2016-06-07 | Massachusetts Institute Of Technology | Carrier-substrate adhesive system |
TW201519725A (zh) * | 2013-11-14 | 2015-05-16 | Wintek Corp | 電子元件半成品、電子元件及其製造方法 |
CN106459676B (zh) * | 2014-06-26 | 2020-01-10 | Ev 集团 E·索尔纳有限责任公司 | 用于以通过靠近基质来分布连接材料从而结合基质的方法 |
CN105690974B (zh) * | 2016-01-21 | 2019-01-18 | 京东方科技集团股份有限公司 | 柔性薄膜贴合与剥离方法、柔性基板制备方法、衬底基板 |
JP6858586B2 (ja) * | 2017-02-16 | 2021-04-14 | 株式会社ディスコ | ウエーハ生成方法 |
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JPH04206725A (ja) * | 1990-11-30 | 1992-07-28 | Toshiba Corp | 半導体ウェーハの洗浄方法及び装置 |
US6114641A (en) | 1998-05-29 | 2000-09-05 | General Electric Company | Rotary contact assembly for high ampere-rated circuit breakers |
JP2001185519A (ja) * | 1999-12-24 | 2001-07-06 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP4364535B2 (ja) | 2003-03-27 | 2009-11-18 | シャープ株式会社 | 半導体装置の製造方法 |
US20060207967A1 (en) * | 2003-07-03 | 2006-09-21 | Bocko Peter L | Porous processing carrier for flexible substrates |
JP2006135272A (ja) * | 2003-12-01 | 2006-05-25 | Tokyo Ohka Kogyo Co Ltd | 基板のサポートプレート及びサポートプレートの剥離方法 |
JP2005222989A (ja) * | 2004-02-03 | 2005-08-18 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
CN102361016A (zh) * | 2007-10-09 | 2012-02-22 | 日立化成工业株式会社 | 半导体用粘接膜、以及半导体芯片、半导体装置的制造方法 |
JP5291392B2 (ja) * | 2008-06-18 | 2013-09-18 | 東京応化工業株式会社 | 支持板剥離装置 |
-
2011
- 2011-01-17 EP EP11700807.8A patent/EP2666185A1/de not_active Withdrawn
- 2011-01-17 KR KR1020137018405A patent/KR20140033327A/ko not_active Application Discontinuation
- 2011-01-17 SG SG2013054309A patent/SG191990A1/en unknown
- 2011-01-17 US US13/978,159 patent/US20130288454A1/en not_active Abandoned
- 2011-01-17 JP JP2013548744A patent/JP2014504024A/ja active Pending
- 2011-01-17 WO PCT/EP2011/000173 patent/WO2012097830A1/de active Application Filing
- 2011-01-17 CN CN201180065137XA patent/CN103299416A/zh active Pending
- 2011-11-30 TW TW100144024A patent/TW201246417A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20130288454A1 (en) | 2013-10-31 |
JP2014504024A (ja) | 2014-02-13 |
EP2666185A1 (de) | 2013-11-27 |
WO2012097830A1 (de) | 2012-07-26 |
CN103299416A (zh) | 2013-09-11 |
SG191990A1 (en) | 2013-08-30 |
KR20140033327A (ko) | 2014-03-18 |
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