JP2004202684A - 加工品の処理方法および加工品キャリア - Google Patents
加工品の処理方法および加工品キャリア Download PDFInfo
- Publication number
- JP2004202684A JP2004202684A JP2003424295A JP2003424295A JP2004202684A JP 2004202684 A JP2004202684 A JP 2004202684A JP 2003424295 A JP2003424295 A JP 2003424295A JP 2003424295 A JP2003424295 A JP 2003424295A JP 2004202684 A JP2004202684 A JP 2004202684A
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- workpiece carrier
- carrier
- processed product
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003672 processing method Methods 0.000 title abstract description 3
- 238000000034 method Methods 0.000 claims abstract description 59
- 239000002904 solvent Substances 0.000 claims abstract description 22
- 239000000126 substance Substances 0.000 claims abstract description 18
- 239000000919 ceramic Substances 0.000 claims abstract description 14
- 239000011343 solid material Substances 0.000 claims abstract description 9
- 239000011148 porous material Substances 0.000 claims description 54
- 239000007787 solid Substances 0.000 claims description 49
- 239000004065 semiconductor Substances 0.000 claims description 48
- 230000001070 adhesive effect Effects 0.000 claims description 20
- 239000000853 adhesive Substances 0.000 claims description 19
- 238000000227 grinding Methods 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 6
- 239000002390 adhesive tape Substances 0.000 claims description 4
- 238000003486 chemical etching Methods 0.000 claims description 4
- 239000002241 glass-ceramic Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 238000003631 wet chemical etching Methods 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000000047 product Substances 0.000 description 60
- 235000012431 wafers Nutrition 0.000 description 42
- 239000000758 substrate Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000001993 wax Substances 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000010828 elution Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000037361 pathway Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000012265 solid product Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/02—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine for mounting on a work-table, tool-slide, or analogous part
- B23Q3/06—Work-clamping means
- B23Q3/08—Work-clamping means other than mechanically-actuated
- B23Q3/084—Work-clamping means other than mechanically-actuated using adhesive means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/02—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine for mounting on a work-table, tool-slide, or analogous part
- B23Q3/06—Work-clamping means
- B23Q3/08—Work-clamping means other than mechanically-actuated
- B23Q3/086—Work-clamping means other than mechanically-actuated using a solidifying liquid, e.g. with freezing, setting or hardening means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/02—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine for mounting on a work-table, tool-slide, or analogous part
- B23Q3/06—Work-clamping means
- B23Q3/08—Work-clamping means other than mechanically-actuated
- B23Q3/088—Work-clamping means other than mechanically-actuated using vacuum means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/918—Delaminating processes adapted for specified product, e.g. delaminating medical specimen slide
- Y10S156/93—Semiconductive product delaminating, e.g. delaminating emiconductive wafer from underlayer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1111—Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1111—Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
- Y10T156/1116—Using specified organic delamination solvent
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1978—Delaminating bending means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249982—With component specified as adhesive or bonding agent
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
【解決手段】 処理される加工品(52)を固形物(62)を用いて加工品キャリア(10)に固定する方法について特に詳述する。この加工品キャリア(10)は、気孔性物質(例えば気孔性セラミックス)からなる。この処理方法によって、処理する際にウェハーを簡単に使用することができる。さらに、この加工品(52)を、加工品キャリア(10)の溶媒を用いて簡単に分離できる。
【選択図】 図3
Description
(c)上記気孔性物質の気孔率が、20%〜50%である
(d)上記気孔性物質の開放気孔率が、10%〜60%または20%〜50%である
(e)上記孔の体積の少なくとも10%または少なくとも20%が、気孔性物質が貫通する孔経路(24、26)である
(f)上記気孔性物質としてP65またはP55を使用する
(g)上記孔(14〜22)が、不規則に配置される、または均等に分散・配置されている
また、上記加工品キャリア(10)上の加工品(52)を薄くし、特に、100μmよりも薄く、または、20μmよりも薄く、好ましくは研削し、及び/又は、研磨し、及び/又は、エッチング、特に湿潤化学的(wet-chemical)、化学または化学物理的にエッチングを行う工程と、及び/又は、加工品キャリア(10)上の加工品(52)に対してリソグラフィー方法(lithografischen Verfahren、lithographic process)、特に照射を行う工程と、及び/又は、加工品キャリア(10)上の加工品(52)に対して層蒸着プロセス(Schichtabscheidungsprozess、layer deposition process)を行う工程を有することが好ましい。
(i)研削処理
(ii)研磨処理
(iii)エッチング処理
(iv)湿潤化学的エッチング処理
(v)化学的エッチング処理
(vi)化学物理的エッチング処理
上記加工品キャリア(10)上の加工品(52)に対してリソグラフィー方法、特に照射を行う工程、上記加工品キャリア(10)上の加工品(52)に対して層蒸着プロセスを行う工程、のうち、少なくともいずれか1つの工程を有することが好ましい。
(ii)研磨処理
(iii)エッチング処理
(iv)湿潤化学的エッチング処理
(v)化学的エッチング処理
(vi)化学物理的エッチング処理
また、上記固形物(62)が、蝋または接着剤またはプラスチック物質または両面の接着テープを含んでいるか、または、これらの物質からなることが好ましい。
DM1 直径
12 側面
13 平面
14〜22 孔
D1〜D3 厚さ
24,26 孔経路
30 上面
32 裏面
50 保持装置
52,52a,52b 半導体ウェハー
54 基板
56 保持環
58 空洞
60 吸い込み経路
62 接着剤
64 矢印
70 CMP機械
72 保持環
74 基板
76 研削工具
80 駆動軸
81 回転方向矢印
82 研削ディスク
84 研磨布
90 溶媒
92 ウェル
94 基部
96 貫通経路
98 保持環
100 空洞
102,104 矢印
Claims (13)
- 加工品(52)の処理方法であって、
処理対象の加工品(52)を、固形物(62)を用いて、加工品キャリア(10)に固定する工程を有し、
上記加工品キャリア(10)は、気孔性物質を含んでいるか、または気孔性物質からなることを特徴とする加工品の処理方法。 - 気体透過性の加工品キャリア(10)を用い、
上記加工品を固定するために、上記加工品キャリア(10)に対して負圧(64)を与える工程を有し、
上記工程を、好ましくは上記固形物(62)を液化した状態で形成した後、及び/又は、固形物(62)が硬化する前に行うことを特徴とする、請求項1に記載の方法。 - 溶媒(90)が加工品キャリア(10)の孔(14〜20)に入り込むことによって、上記固形物(62)が溶出され、加工品(52)と加工品キャリア(10)とを分離させる工程を有することを特徴とする、請求項1または2に記載の方法。
- 孔経路(24、26)を有するとともに、溶媒(90)を透過させる性質を有する加工品キャリア(10)を使用し、加工品(52)と加工品キャリア(10)とを分離させるために、
上記溶媒を、上記孔経路(24、26)を通過させ、1つの孔または複数の孔(14〜20)から、加工品キャリア(10)を介して固形物(62)まで到達させる工程を有することを特徴とする請求項3に記載の方法。 - 上記溶媒を固形物まで到達させる工程は、毛管作用によって、または、正圧(104)または負圧(102)の付与によって、加工品(52)から離れている側の、加工品キャリア(10)の側面に到達させる工程であることを特徴とする、請求項4に記載の方法。
- 上記気孔性物質は、以下の(a)〜(g)に記載の少なくともいずれか1つの要件を満たすことを特徴とする請求項1〜5のいずれか1項に記載の方法。
(a)セラミックス、ガラス、ガラスセラミックス、金属、特に焼結させた金属、金属セラミックス、または、焼結物質である。
(b)上記孔の平均的大きさは、20μm〜500μm、または50μm〜100μmである
(c)上記気孔性物質の気孔率が、20%〜50%である
(d)上記気孔性物質の開放気孔率が、10%〜60%または20%〜50%である
(e)上記孔の体積の少なくとも10%または少なくとも20%が、気孔性物質が貫通する孔経路(24、26)である
(f)上記気孔性物質としてP65またはP55を使用する
(g)上記孔(14〜22)が、不規則に配置される、または均等に分散・配置されている - 上記加工品キャリア(10)上の加工品(52)を、以下の(i)〜(vi)の少なくともいずれか1つの処理を行って、100μmよりも薄くする工程、
(i)研削処理
(ii)研磨処理
(iii)エッチング処理
(iv)湿潤化学的エッチング処理
(v)化学的エッチング処理
(vi)化学物理的エッチング処理
上記加工品キャリア(10)上の加工品(52)に対してリソグラフィー方法、特に照射を行う工程、
上記加工品キャリア(10)上の加工品(52)に対して層蒸着プロセスを行う工程、のうち、少なくともいずれか1つの工程を有することを特徴とする、請求項1〜6のいずれか1項に記載の方法。 - 上記加工品キャリア(10)上の加工品(52)を、以下の(i)〜(vi)の少なくともいずれか1つの処理を行って、20μmよりも薄くする工程を有することを特徴とする請求項7に記載の方法。
(i)研削処理
(ii)研磨処理
(iii)エッチング処理
(iv)湿潤化学的エッチング処理
(v)化学的エッチング処理
(vi)化学物理的エッチング処理 - 上記固形物(62)が、蝋または接着剤またはプラスチック物質または両面の接着テープを含んでいるか、または、これらの物質からなることを特徴とする、請求項1〜8のいずれか1項に記載の方法。
- 上記加工品(52)が、半導体物質、特にシリコンを含んでいるか、または、半導体物質からなり、
及び/又は、上記加工品(52)が、半導体ウェハーであることを特徴とする、請求項1〜9のいずれか1項に記載の方法。 - 上記固形物(62)が、加工品(52)と加工品キャリア(10)との間の全隙間を充填するか、
または、上記固形物(62)が、加工品(52)と加工品キャリア(10)との間の隙間の1部分のみを充填し、特に隙間によって互いに分けられた複数の領域、または、充填されていない領域を取り囲む環状の領域のみを充填する工程を有することを特徴とする、請求項1〜10のいずれか1項に記載の方法。 - 加工品キャリア(10)、特に請求項1〜11のいずれか1項に記載の方法に用いられる、板またはディスクの形状をした加工品キャリア(10)であって、
上記加工品キャリア(10)が、気孔性物質を含んでいるか、または、気孔性物質からなることを特徴とする、加工品キャリア(10)。 - 上記加工品キャリア(10)が半導体ウェハー(52)と略同じ輪郭を有し、
上記加工品キャリア(10)の直径(DM1)が、半導体ウェハー(25)の直径と略同じであることを特徴とする、請求項10に記載の加工品キャリア(10)。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10260233.6A DE10260233B4 (de) | 2002-12-20 | 2002-12-20 | Verfahren zum Befestigen eines Werkstücks mit einem Feststoff an einem Werkstückträger und Werkstückträger |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2004202684A true JP2004202684A (ja) | 2004-07-22 |
Family
ID=32404116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003424295A Pending JP2004202684A (ja) | 2002-12-20 | 2003-12-22 | 加工品の処理方法および加工品キャリア |
Country Status (5)
Country | Link |
---|---|
US (1) | US7708854B2 (ja) |
JP (1) | JP2004202684A (ja) |
KR (1) | KR100558995B1 (ja) |
DE (1) | DE10260233B4 (ja) |
TW (1) | TWI271270B (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006173631A (ja) * | 2004-12-16 | 2006-06-29 | Siltronic Ag | 被覆された半導体ウェハ及び半導体ウェハを製造する方法及び装置 |
JP2007306005A (ja) * | 2006-05-12 | 2007-11-22 | Applied Materials Gmbh & Co Kg | 基板被覆用キャリアを備えた被覆設備 |
JP2008021937A (ja) * | 2006-07-14 | 2008-01-31 | Tokyo Ohka Kogyo Co Ltd | ウエハを薄くする方法及びサポートプレート |
JP2018511172A (ja) * | 2015-03-11 | 2018-04-19 | エンベー ベカルト ソシエテ アノニムNV Bekaert SA | 一時的に接着されるウェハ用のキャリア |
JP2018142631A (ja) * | 2017-02-28 | 2018-09-13 | 日化精工株式会社 | ウェーハの仮止め用サポート基板及びウェーハの仮止め処理方法 |
JP2021044471A (ja) * | 2019-09-13 | 2021-03-18 | 株式会社東芝 | 保持板および基板の研磨方法 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT10874U1 (de) * | 2004-08-20 | 2009-11-15 | Semitool Inc | System zum dünnen eines halbleiter-werkstücks |
JP5318324B2 (ja) * | 2005-12-06 | 2013-10-16 | 東京応化工業株式会社 | サポートプレートの貼り合わせ方法 |
DE102006009639A1 (de) * | 2006-03-02 | 2007-09-06 | Schott Ag | Vakuumspannplatte |
JP5271554B2 (ja) * | 2008-02-04 | 2013-08-21 | 東京応化工業株式会社 | サポートプレート |
US20110079632A1 (en) * | 2009-10-01 | 2011-04-07 | International Business Machines Corporation | Multistack solder wafer filling |
KR101837227B1 (ko) * | 2011-01-07 | 2018-03-09 | 인텔 코포레이션 | 박리 장치, 박리 시스템, 박리 방법 및 컴퓨터 기억 매체 |
TWI420634B (zh) * | 2011-02-24 | 2013-12-21 | Unimicron Technology Corp | 封裝結構及其製法 |
JP5647335B2 (ja) * | 2011-03-29 | 2014-12-24 | パナソニックIpマネジメント株式会社 | はんだ転写基材、はんだ転写基材の製造方法、及びはんだ転写方法 |
TW201409046A (zh) * | 2012-05-31 | 2014-03-01 | Advantest Corp | 載具分解裝置、電子元件收容裝置、電子元件取出裝置以及電子元件測試裝置 |
US20160017184A1 (en) * | 2013-03-06 | 2016-01-21 | John Moore | Adhesive with tunable porosity and methods to support temporary bonding applications |
US10046550B2 (en) | 2013-08-22 | 2018-08-14 | Massachusetts Institute Of Technology | Carrier-substrate adhesive system |
US9359198B2 (en) * | 2013-08-22 | 2016-06-07 | Massachusetts Institute Of Technology | Carrier-substrate adhesive system |
GB2510457B (en) * | 2013-11-12 | 2017-06-07 | Rolls Royce Plc | Method and apparatus for forming thin discs |
WO2016142238A1 (en) | 2015-03-11 | 2016-09-15 | Nv Bekaert Sa | Carrier for temporary bonded wafers |
WO2016142239A1 (en) | 2015-03-11 | 2016-09-15 | Nv Bekaert Sa | Carrier for temporary bonded wafers |
WO2016142240A1 (en) | 2015-03-11 | 2016-09-15 | Nv Bekaert Sa | Carrier for temporary bonded wafers |
WO2019049588A1 (en) | 2017-09-07 | 2019-03-14 | Mapper Lithography Ip B.V. | METHODS AND SYSTEMS FOR COATING A SUBSTRATE |
CN109590845B (zh) * | 2018-11-01 | 2020-02-04 | 浦江凯瑞车镜有限公司 | 一种棱镜的生产工艺及抛光模具 |
IT201900000217A1 (it) * | 2019-01-08 | 2020-07-08 | Luca Mariotti | Procedimento per produrre un frontale di una montatura per occhiali |
CN110497167A (zh) * | 2019-07-23 | 2019-11-26 | 广东工业大学 | 一种非晶合金的加工方法 |
CN110509205B (zh) * | 2019-08-21 | 2022-03-29 | 深圳中科飞测科技股份有限公司 | 一种吸板 |
CN110860950B (zh) * | 2019-11-28 | 2021-08-13 | 苏州晶鼎鑫光电科技有限公司 | 一种用于5g光模块中基于氮化铝陶瓷正侧面金属化的制作方法 |
WO2022032148A1 (en) | 2020-08-06 | 2022-02-10 | Mate Precision Technologies Inc. | Tooling base assembly |
WO2022032178A1 (en) | 2020-08-06 | 2022-02-10 | Mate Precision Technologies Inc. | Vise assembly |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1291698B (de) * | 1965-06-14 | 1969-03-27 | Siemens Ag | Vorrichtung zur Halterung von Werkstuecken |
US3865359A (en) * | 1972-05-01 | 1975-02-11 | Dbm Industries Ltd | Vacuum apparatus |
FR2182787B1 (ja) * | 1972-05-01 | 1975-06-13 | Dem Ind Ltd | |
DE7922341U1 (de) * | 1979-08-04 | 1979-11-08 | Gesellschaft Fuer Schwerionenforschung Mbh, 6100 Darmstadt | Vakuum-aufspanntisch zum aufspannen von duennen folien |
JPS5833705Y2 (ja) | 1980-05-23 | 1983-07-28 | 株式会社 デイスコ | 吸着固定装置 |
JPS5917159A (ja) | 1982-07-20 | 1984-01-28 | Nippon Kokan Kk <Nkk> | 石炭類自動分析装置 |
JPS59209756A (ja) * | 1983-05-16 | 1984-11-28 | Toshiba Corp | 半導体ウエハの保持方式 |
US4466852A (en) * | 1983-10-27 | 1984-08-21 | At&T Technologies, Inc. | Method and apparatus for demounting wafers |
JPS6150631A (ja) | 1984-08-14 | 1986-03-12 | Yaesu Kikaku:Kk | 凝集剤の前駆物質およびその製造方法 |
JPS63210148A (ja) * | 1987-02-26 | 1988-08-31 | Nikko Rika Kk | 真空チヤツク用プラスチツクス焼結体 |
DE8703223U1 (ja) * | 1987-03-03 | 1987-04-16 | Modellbau Paul Apitz, 7913 Senden, De | |
US5273615A (en) * | 1992-04-06 | 1993-12-28 | Motorola, Inc. | Apparatus and method for handling fragile semiconductor wafers |
JPH065569A (ja) | 1992-06-17 | 1994-01-14 | Ratsupu Master S F T Kk | 半導体ウエハのチャック機構 |
JPH1022184A (ja) * | 1996-06-28 | 1998-01-23 | Sony Corp | 基板張り合わせ装置 |
KR100267155B1 (ko) * | 1996-09-13 | 2000-10-16 | 아끼구사 나오유끼 | 반도체 장치의 제조 방법 및 제조 장치 |
US5883522A (en) * | 1996-11-07 | 1999-03-16 | National Semiconductor Corporation | Apparatus and method for retaining a semiconductor wafer during testing |
US5875023A (en) * | 1997-01-31 | 1999-02-23 | International Business Machines Corporation | Dual-sided expose mechanism for web product |
US5927193A (en) * | 1997-10-16 | 1999-07-27 | International Business Machines Corporation | Process for via fill |
DE29909410U1 (de) | 1999-06-01 | 2000-05-04 | Lotsch Friedemann | Vorrichtung zum Spannen von Gegenständen |
DE19929617A1 (de) * | 1999-06-28 | 2001-01-25 | Siemens Ag | Vorrichtung und Verfahren zum Haltern eines Werkstücks sowie Anwendung des Verfahrens |
JP2001121413A (ja) | 1999-10-21 | 2001-05-08 | Toshiba Mach Co Ltd | 平板状の被加工材の保持方法 |
JP4462755B2 (ja) | 2000-12-15 | 2010-05-12 | 京セラ株式会社 | ウエハー支持基板 |
US6698077B2 (en) * | 2000-12-27 | 2004-03-02 | International Business Machines Corporation | Display fabrication using modular active devices |
US6470946B2 (en) * | 2001-02-06 | 2002-10-29 | Anadigics, Inc. | Wafer demount gas distribution tool |
JP2002343751A (ja) * | 2001-05-14 | 2002-11-29 | Mitsubishi Gas Chem Co Inc | 電子部品の製造法 |
DE10128924A1 (de) * | 2001-06-15 | 2003-01-23 | Philips Corp Intellectual Pty | Verfahren zum Umsetzen eines im wesentlichen scheibenförmigen Werkstücks sowie Vorrichtung zum Durchführen dieses Verfahrens |
-
2002
- 2002-12-20 DE DE10260233.6A patent/DE10260233B4/de not_active Expired - Fee Related
-
2003
- 2003-11-24 TW TW92132971A patent/TWI271270B/zh not_active IP Right Cessation
- 2003-12-05 US US10/729,882 patent/US7708854B2/en not_active Expired - Fee Related
- 2003-12-19 KR KR1020030093606A patent/KR100558995B1/ko not_active IP Right Cessation
- 2003-12-22 JP JP2003424295A patent/JP2004202684A/ja active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006173631A (ja) * | 2004-12-16 | 2006-06-29 | Siltronic Ag | 被覆された半導体ウェハ及び半導体ウェハを製造する方法及び装置 |
JP2007306005A (ja) * | 2006-05-12 | 2007-11-22 | Applied Materials Gmbh & Co Kg | 基板被覆用キャリアを備えた被覆設備 |
JP2008021937A (ja) * | 2006-07-14 | 2008-01-31 | Tokyo Ohka Kogyo Co Ltd | ウエハを薄くする方法及びサポートプレート |
JP2018511172A (ja) * | 2015-03-11 | 2018-04-19 | エンベー ベカルト ソシエテ アノニムNV Bekaert SA | 一時的に接着されるウェハ用のキャリア |
JP2018142631A (ja) * | 2017-02-28 | 2018-09-13 | 日化精工株式会社 | ウェーハの仮止め用サポート基板及びウェーハの仮止め処理方法 |
JP2021044471A (ja) * | 2019-09-13 | 2021-03-18 | 株式会社東芝 | 保持板および基板の研磨方法 |
JP7189106B2 (ja) | 2019-09-13 | 2022-12-13 | 株式会社東芝 | 保持板および基板の研磨方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100558995B1 (ko) | 2006-03-10 |
US7708854B2 (en) | 2010-05-04 |
DE10260233B4 (de) | 2016-05-19 |
TWI271270B (en) | 2007-01-21 |
TW200414976A (en) | 2004-08-16 |
US20040231793A1 (en) | 2004-11-25 |
KR20040055681A (ko) | 2004-06-26 |
DE10260233A1 (de) | 2004-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2004202684A (ja) | 加工品の処理方法および加工品キャリア | |
JP6429388B2 (ja) | 積層デバイスの製造方法 | |
US9716040B2 (en) | Wafer processing method using adhesive tape to pick up device chips | |
KR102024390B1 (ko) | 표면 보호 부재 및 가공 방법 | |
US20050221584A1 (en) | Wafer processing method | |
JP2004510334A5 (ja) | ||
TWI754754B (zh) | 晶圓加工方法 | |
CN106611717A (zh) | 处理工件的工艺和为该工艺设计的装置 | |
TWI795577B (zh) | 基板處理系統及基板處理方法 | |
JP4416108B2 (ja) | 半導体ウェーハの製造方法 | |
KR20130007424A (ko) | 피가공물의 연삭 방법 | |
KR20200019086A (ko) | 캐리어판의 제거 방법 | |
JPH11243135A (ja) | 真空吸着盤 | |
US8580070B2 (en) | Method of applying an adhesive layer on thincut semiconductor chips of a semiconductor wafer | |
JP2007180252A (ja) | 半導体装置の製造方法 | |
JP6417164B2 (ja) | 積層体製造装置、積層体、分離装置及び積層体製造方法 | |
TWI782189B (zh) | 剝離方法 | |
JP2021190642A (ja) | 電極形成方法 | |
JP2016051779A (ja) | ウエーハの貼り合わせ方法及び貼り合わせワークの剥離方法 | |
JP2013008814A (ja) | ウェーハの加工方法 | |
JP2013073959A (ja) | 薄膜個片の接合方法 | |
JP2017157679A (ja) | パッケージウェーハの製造方法及びパッケージウェーハ | |
KR20230050240A (ko) | 디바이스 칩의 제조 방법 | |
TW202205462A (zh) | 載板之除去方法 | |
KR20230050239A (ko) | 디바이스 칩의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060912 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061211 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20061211 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070925 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071221 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080826 |